CN116909345A - High-voltage control low-voltage power panel - Google Patents
High-voltage control low-voltage power panel Download PDFInfo
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- CN116909345A CN116909345A CN202311166673.XA CN202311166673A CN116909345A CN 116909345 A CN116909345 A CN 116909345A CN 202311166673 A CN202311166673 A CN 202311166673A CN 116909345 A CN116909345 A CN 116909345A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Abstract
The invention discloses a high-voltage control low-voltage power panel, which comprises: the high-voltage sampling device comprises a high-voltage end, a high-voltage sampling module, a high-voltage end control switch, a conversion unit, a low-voltage end and a signal output module of the low-voltage end; the conversion unit comprises a light emitting diode and a phototriode; the high-voltage sampling module is used for setting a sampling period, and the high-voltage end control switch is automatically opened or closed according to the sampling period; when the high-voltage end control switch is turned on, the light emitting diode is turned on and emits light, the light emitting diode emits light to enable the phototriode to be turned on, the signal output module of the low-voltage end outputs a low-potential signal, when the high-voltage end control switch is turned on, the light emitting diode is turned off, the phototriode is not turned on, and the signal output module of the low-voltage end outputs a high-potential signal. The LED and the phototriode are matched with a high-voltage end control switch, so that the process of converting high voltage into low voltage is not needed, a high-low signal can be output at the low-voltage end, and the high-voltage end controls the low-voltage to realize control logic of signal conversion.
Description
Technical Field
The invention relates to the technical field of voltage conversion control, in particular to a high-voltage control low-voltage power panel.
Background
With the advent of computer technology, computers have been updated rapidly on software and hardware devices, and peripheral devices used in cooperation with computers are also updated continuously and iteratively, no matter between hardware devices inside the computer or between the computer and the peripheral devices, some devices usually need to be controlled by voltage, and some peripheral devices such as RGB are controlled by a low-voltage terminal generally adopted in the prior art, but the following problems exist in the prior art: it is necessary to increase the number of circuits and design steps after the low voltage control logic is designed by converting the high voltage into the low voltage, and therefore, a scheme for realizing the voltage control logic and simplifying the control is needed.
Disclosure of Invention
The present invention provides a power panel for controlling low voltage at high voltage to solve the above problems in the prior art.
The invention provides a high-voltage control low-voltage power panel, which comprises: the high-voltage sampling device comprises a high-voltage end, a high-voltage sampling module, a high-voltage end control switch, a conversion unit, a low-voltage end and a signal output module of the low-voltage end;
the conversion unit comprises a light emitting diode and a phototriode;
the high-voltage sampling module is used for setting a sampling period, and the high-voltage end control switch is automatically opened or closed according to the sampling period;
when the high-voltage end control switch is turned on, the light emitting diode is turned on and emits light, the light emitting diode emits light to enable the phototriode to be turned on, the signal output module of the low-voltage end outputs a low-potential signal, when the high-voltage end control switch is turned on, the light emitting diode is turned off, the phototriode is not turned on, and the signal output module of the low-voltage end outputs a high-potential signal.
Preferably, the high-voltage end is connected with the anode of the light emitting diode through a resistor R1, the cathode of the light emitting diode is connected with the high-voltage end control switch, and the other end of the high-voltage end control switch is grounded;
the low-voltage end is connected with the collector electrode of the phototriode through a resistor R2, and the emitter electrode of the phototriode is grounded; the collector of the phototriode forms a signal output module at a low-voltage end through a resistor R3, and the signal output module at the low-voltage end is used for outputting a high-potential signal or a low-potential signal.
Preferably, the high voltage sampling module is configured to set a sampling period, and includes:
determining a sampling period according to the duty ratio of an output signal of a signal output module of a low-voltage end, wherein the duty ratio time of a high-potential signal in the duty ratio of the output signal corresponds to the opening time of a high-voltage end control switch of the sampling period, and the duty ratio time of the low-potential signal in the duty ratio of the output signal corresponds to the closing time of the high-voltage end control switch of the sampling period;
the duty ratio of the output signal is determined according to the requirement, a sampling period is set based on the duty ratio of the output signal, the high-voltage sampling module controls the opening time and the closing time of the high-voltage end control switch according to the sampling period, the opening or closing of the high-voltage end control switch controls the working state of the conversion unit, and then the output signal of high potential and low potential alternation output by the signal output module at the low-voltage end is controlled.
Preferably, the device further comprises a mode setting unit connected with the high-voltage sampling module;
the mode setting unit is used for setting a plurality of scene modes, different scene modes correspond to different sampling periods, the corresponding sampling periods are called through the selection of the different scene modes by a user, and the opening time and the closing time of the high-voltage end control switch are controlled based on the corresponding sampling periods.
Preferably, the system further comprises a timing unit, the mode setting unit and the high-voltage sampling module are connected, the timing unit is used for setting a plurality of timing units, each timing unit corresponds to one scene mode in the mode setting unit, timing time is set for each scene mode, the user sets the sequence of the scene modes, and automatic switching of the scene modes is carried out according to the sequence and the timing time of each scene.
Preferably, the performance model of the phototriode is further included; determining performance parameters of the phototriode according to the performance model of the phototriode;
the performance model of the phototransistor includes:
the first linear unit is used for determining that the luminous power of the light-emitting diode changes along with the temperature to be in a first linear relation;
the second linear unit is used for determining that the amplification factor of the phototriode is in a second linear relation with the change of temperature;
the current transmission ratio calculation unit is used for determining a current transmission ratio function according to the luminous power of the light emitting diode and the amplification factor of the phototriode;
the derivative calculating unit is used for calculating the coefficient according to the first linear relation and the second linear relation so that the current transmission ratio is maximum when the temperature is 0 ℃ according to the derivative function obtained by derivative of the current transmission ratio function.
Preferably, the relation between the temperature and the current transmission ratio is determined according to the performance model of the phototriode, and the related parameters of the phototriode are set according to different temperatures.
Preferably, the high voltage sampling module further includes an error time calculating unit, configured to calculate an error time of the phototransistor, and add the error time when the sampling period is set, so as to form a final sampling period.
Preferably, the error time calculation unit includes:
a first average value calculation subunit, configured to calculate a first average value of emitter barrier capacitance when the bias voltage of the phototransistor changes from the forward voltage of the base-emitter to the forward conduction voltage of the emitter;
a second average value calculation subunit for calculating a second average value of the collector barrier capacitance when the bias voltage changes from the first voltage to the second voltage; the first voltage is: subtracting the forward turn-on voltage of the emitter from the collector-emitter voltage; the second voltage is: subtracting the output voltage from the forward conduction voltage of the emitter;
the equivalent calculation unit is used for dividing the first average value subtracted by the second average value by the base driving current to obtain an equivalent settlement result;
and the first error time obtaining unit is used for multiplying the equivalent settlement result by the sum of the forward conduction voltage of the emitter and the emitter-base voltage to obtain the first error time of the phototriode.
Preferably, the error time calculation unit further includes:
a first calculation unit for calculating an average value of emitter capacitances of the phototransistors;
a second calculation unit for calculating an average value of collector barrier capacitances of the phototransistors;
a mean value sum forming unit for adding the mean value of the emitter capacitance and the mean value of the collector barrier capacitance to form a mean value sum;
a voltage sum forming unit for forming a voltage sum by summing a forward turn-on voltage of the emitter and a reverse voltage of the base-emitter;
and a second error time forming unit for multiplying the sum of the average values and the sum of the voltages, dividing the multiplied result by the forward driving current of the light emitting diode, and forming a second error time of the phototransistor.
Compared with the prior art, the invention has the following advantages:
the invention provides a high-voltage control low-voltage power panel, which comprises: the high-voltage sampling device comprises a high-voltage end, a high-voltage sampling module, a high-voltage end control switch, a conversion unit, a low-voltage end and a signal output module of the low-voltage end; the conversion unit comprises a light emitting diode and a phototriode; the high-voltage sampling module is used for setting a sampling period, and the high-voltage end control switch is automatically opened or closed according to the sampling period; when the high-voltage end control switch is turned on, the light emitting diode is turned on and emits light, the light emitting diode emits light to enable the phototriode to be turned on, the signal output module of the low-voltage end outputs a low-potential signal, when the high-voltage end control switch is turned on, the light emitting diode is turned off, the phototriode is not turned on, and the signal output module of the low-voltage end outputs a high-potential signal. The LED and the phototriode are matched with the high-voltage end control switch, so that the high-potential signal and the low-potential signal can be output at the low-voltage end, and the subsequent signal control can be further realized based on the output signals. The control logic for realizing signal conversion by controlling the low voltage through the high voltage terminal does not need the process of converting the high voltage into the low voltage, so that the steps of circuit control are simplified.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims thereof as well as the appended drawings.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
fig. 1 is a schematic structural diagram of a high-voltage controlled low-voltage power panel according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a high voltage control low voltage in an embodiment of the invention;
fig. 3 is a schematic structural diagram of a performance model of a phototransistor according to an embodiment of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
Referring to fig. 1, an embodiment of the present invention provides a power panel for controlling low voltage at high voltage, where the power panel includes: the high-voltage sampling device comprises a high-voltage end, a high-voltage sampling module, a high-voltage end control switch, a conversion unit, a low-voltage end and a signal output module of the low-voltage end;
the conversion unit comprises a light emitting diode and a phototriode;
the high-voltage sampling module is used for setting a sampling period, and the high-voltage end control switch is automatically opened or closed according to the sampling period;
when the high-voltage end control switch is turned on, the light emitting diode is turned on and emits light, the light emitting diode emits light to enable the phototriode to be turned on, the signal output module of the low-voltage end outputs a low-potential signal, when the high-voltage end control switch is turned on, the light emitting diode is turned off, the phototriode is not turned on, and the signal output module of the low-voltage end outputs a high-potential signal.
The working principle of the technical scheme is as follows: the scheme adopted by the embodiment comprises the following steps: the high-voltage sampling device comprises a high-voltage end, a high-voltage sampling module, a high-voltage end control switch, a conversion unit, a low-voltage end and a signal output module of the low-voltage end; the conversion unit comprises a light emitting diode and a phototriode; the high-voltage sampling module is used for setting a sampling period, and the high-voltage end control switch is automatically opened or closed according to the sampling period; when the high-voltage end control switch is turned on, the light emitting diode is turned on and emits light, the light emitting diode emits light to enable the phototriode to be turned on, the signal output module of the low-voltage end outputs a low-potential signal, when the high-voltage end control switch is turned on, the light emitting diode is turned off, the phototriode is not turned on, and the signal output module of the low-voltage end outputs a high-potential signal.
The beneficial effects of the technical scheme are as follows: the scheme provided by the embodiment comprises the following steps: the high-voltage sampling device comprises a high-voltage end, a high-voltage sampling module, a high-voltage end control switch, a conversion unit, a low-voltage end and a signal output module of the low-voltage end; the conversion unit comprises a light emitting diode and a phototriode; the high-voltage sampling module is used for setting a sampling period, and the high-voltage end control switch is automatically opened or closed according to the sampling period; when the high-voltage end control switch is turned on, the light emitting diode is turned on and emits light, the light emitting diode emits light to enable the phototriode to be turned on, the signal output module of the low-voltage end outputs a low-potential signal, when the high-voltage end control switch is turned on, the light emitting diode is turned off, the phototriode is not turned on, and the signal output module of the low-voltage end outputs a high-potential signal. The LED and the phototriode are matched with the high-voltage end control switch, so that the high-potential signal and the low-potential signal can be output at the low-voltage end, and the subsequent signal control can be further realized based on the output signals. The control logic for realizing signal conversion by controlling the low voltage through the high voltage terminal does not need the process of converting the high voltage into the low voltage, so that the steps of circuit control are simplified.
In another embodiment, referring to fig. 2, the high voltage end is connected to the positive electrode of the light emitting diode through a resistor R1, the negative electrode of the light emitting diode is connected to the high voltage end control switch, and the other end of the high voltage end control switch is grounded;
the low-voltage end is connected with the collector electrode of the phototriode through a resistor R2, and the emitter electrode of the phototriode is grounded; the collector of the phototriode forms a signal output module at a low-voltage end through a resistor R3, and the signal output module at the low-voltage end is used for outputting a high-potential signal or a low-potential signal.
The working principle of the technical scheme is as follows: the scheme adopted by the embodiment is that a high-voltage end HVCC is connected with the positive electrode of a light emitting diode U1A through a resistor R1, the negative electrode of the light emitting diode U1A is connected with a high-voltage end control switch S1, and the other end of the high-voltage end control switch S1 is grounded; the low-voltage end VCC is connected with the collector electrode of the phototriode U1B through a resistor R2, and the emitter electrode of the phototriode U1B is grounded; the collector of the phototriode U1B forms a signal output module of a low-voltage end through a resistor R3, and the signal output module of the low-voltage end is used for outputting a high-potential signal or a low-potential signal.
The beneficial effects of the technical scheme are as follows: by adopting the scheme provided by the embodiment, two pins are arranged at the high-voltage end, namely the pin 1 and the pin 2, wherein the pin 1 is the grounding end PGND of the high-voltage end, and the pin 2 is the input end HVCC of the high-voltage end. Correspondingly, at the low voltage end, three pins are provided, namely a pin 1, a pin 2 and a pin 3 at the low voltage end, wherein the pin 1 at the low voltage end is a ground end GND at the low voltage end, the pin 2 is output signals such as output signals RGB1 and RGB2 …, and the pin 3 is an input end VCC at the low voltage end. Therefore, through the scheme of the embodiment, the effect of outputting high and low signals through the control of the high voltage end can be realized through the starting of the conversion unit.
In another embodiment, the high voltage sampling module is configured to set a sampling period, including:
determining a sampling period according to the duty ratio of an output signal of a signal output module of a low-voltage end, wherein the duty ratio time of a high-potential signal in the duty ratio of the output signal corresponds to the opening time of a high-voltage end control switch of the sampling period, and the duty ratio time of the low-potential signal in the duty ratio of the output signal corresponds to the closing time of the high-voltage end control switch of the sampling period;
the duty ratio of the output signal is determined according to the requirement, a sampling period is set based on the duty ratio of the output signal, the high-voltage sampling module controls the opening time and the closing time of the high-voltage end control switch according to the sampling period, the opening or closing of the high-voltage end control switch controls the working state of the conversion unit, and then the output signal of high potential and low potential alternation output by the signal output module at the low-voltage end is controlled.
The working principle of the technical scheme is as follows: the scheme adopted in this embodiment is that the high voltage sampling module is used for setting a sampling period, including: determining a sampling period according to the duty ratio of an output signal of a signal output module of a low-voltage end, wherein the duty ratio time of a high-potential signal in the duty ratio of the output signal corresponds to the opening time of a high-voltage end control switch of the sampling period, and the duty ratio time of the low-potential signal in the duty ratio of the output signal corresponds to the closing time of the high-voltage end control switch of the sampling period; the duty ratio of the output signal is determined according to the requirement, a sampling period is set based on the duty ratio of the output signal, the high-voltage sampling module controls the opening time and the closing time of the high-voltage end control switch according to the sampling period, the opening or closing of the high-voltage end control switch controls the working state of the conversion unit, and then the output signal of high potential and low potential alternation output by the signal output module at the low-voltage end is controlled.
The beneficial effects of the technical scheme are as follows: the scheme provided by the embodiment is that the high-voltage sampling module is used for setting a sampling period, and comprises: determining a sampling period according to the duty ratio of an output signal of a signal output module of a low-voltage end, wherein the duty ratio time of a high-potential signal in the duty ratio of the output signal corresponds to the opening time of a high-voltage end control switch of the sampling period, and the duty ratio time of the low-potential signal in the duty ratio of the output signal corresponds to the closing time of the high-voltage end control switch of the sampling period; the duty ratio of the output signal is determined according to the requirement, a sampling period is set based on the duty ratio of the output signal, the high-voltage sampling module controls the opening time and the closing time of the high-voltage end control switch according to the sampling period, the opening or closing of the high-voltage end control switch controls the working state of the conversion unit, and then the output signal of high potential and low potential alternation output by the signal output module at the low-voltage end is controlled. The signal to be output is used as a setting basis for setting the sampling period, the duty ratio of the output signal has a corresponding relation with the periodic rule of the sampling period, the designed sampling period strictly corresponds to the finally generated output signal, and the stability of the output signal is ensured.
In another embodiment, the device further comprises a mode setting unit connected with the high-voltage sampling module;
the mode setting unit is used for setting a plurality of scene modes, different scene modes correspond to different sampling periods, the corresponding sampling periods are called through the selection of the different scene modes by a user, and the opening time and the closing time of the high-voltage end control switch are controlled based on the corresponding sampling periods.
The working principle of the technical scheme is as follows: the scheme adopted by the embodiment is that the device also comprises a mode setting unit which is connected with the high-voltage sampling module; the mode setting unit is used for setting a plurality of scene modes, different scene modes correspond to different sampling periods, the corresponding sampling periods are called through the selection of the different scene modes by a user, and the opening time and the closing time of the high-voltage end control switch are controlled based on the corresponding sampling periods.
The beneficial effects of the technical scheme are as follows: the scheme provided by the embodiment further comprises a mode setting unit which is connected with the high-voltage sampling module; the mode setting unit is used for setting a plurality of scene modes, different scene modes correspond to different sampling periods, the corresponding sampling periods are called through the selection of the different scene modes by a user, and the opening time and the closing time of the high-voltage end control switch are controlled based on the corresponding sampling periods. By setting different scene modes, the setting by a user can be carried out according to different scene modes corresponding to different sampling periods, so that the control switch can be automatically started and closed switched according to the sampling periods, the automatic output of an output signal can be realized, and the required output signal can be obtained without intervention.
In another embodiment, the system further comprises a timing unit, the mode setting unit and the high-voltage sampling module are connected, the timing unit is used for setting a plurality of timing units, each timing unit corresponds to one scene mode in the mode setting unit, timing time is set for each scene mode, the user sets the sequence of the scene modes, and automatic switching of the scene modes is performed according to the sequence and the timing time of each scene.
The working principle of the technical scheme is as follows: the scheme adopted by the embodiment is that the device further comprises a timing unit, the mode setting unit and the high-voltage sampling module are connected, the timing unit is used for setting a plurality of timing units, each timing unit corresponds to one scene mode in the mode setting unit, timing time is set for each scene mode, the user sets the sequence of the scene modes, and automatic switching of the scene modes is carried out according to the sequence and the timing time of each scene.
The beneficial effects of the technical scheme are as follows: the scheme provided by the embodiment further comprises a timing unit, the mode setting unit and the high-voltage sampling module are connected, the timing unit is used for setting a plurality of timing units, each timing unit corresponds to one scene mode in the mode setting unit, timing time is set for each scene mode, the user sets the sequence of the scene modes, and automatic switching of the scene modes is carried out according to the sequence and the timing time of each scene. By setting the timing mode, setting the corresponding timing time for each scene mode, executing the corresponding scene mode in the timing time, and setting the sequence of the scene modes and the corresponding timing time, the strict control of the application time of the scene modes is realized, and the control mode is realized automatically.
In another embodiment, the performance model of the phototransistor is also included; determining performance parameters of the phototriode according to the performance model of the phototriode;
referring to fig. 3, the performance model of the phototransistor includes:
the first linear unit is used for determining that the luminous power of the light-emitting diode changes along with the temperature to be in a first linear relation;
the second linear unit is used for determining that the amplification factor of the phototriode is in a second linear relation with the change of temperature;
the current transmission ratio calculation unit is used for determining a current transmission ratio function according to the luminous power of the light emitting diode and the amplification factor of the phototriode;
the derivative calculating unit is used for calculating the coefficient according to the first linear relation and the second linear relation so that the current transmission ratio is maximum when the temperature is 0 ℃ according to the derivative function obtained by derivative of the current transmission ratio function.
The working principle of the technical scheme is as follows: the scheme adopted by the embodiment is that the device also comprises a performance model of the phototriode; determining performance parameters of the phototriode according to the performance model of the phototriode;
the performance model of the phototransistor includes:
the first linear unit is used for determining that the luminous power of the light-emitting diode changes along with the temperature to be in a first linear relation;
the light emitting power of the light emitting diode is represented, x represents the temperature, and a and b represent constants;
the second linear unit is used for determining that the amplification factor of the phototriode is in a second linear relation with the change of temperature;
indicating the amplification factor of the phototransistor, x indicating the temperature, c and d indicating constants;
the current transmission ratio calculation unit is used for determining a current transmission ratio function according to the luminous power of the light emitting diode and the amplification factor of the phototriode;
representing the current transmission ratio, k being a coefficient;
the derivative calculating unit is used for calculating the coefficient according to the first linear relation and the second linear relation so that the current transmission ratio is maximum when the temperature is 0 ℃ according to the derivative function obtained by derivative of the current transmission ratio function.
At a temperature x at 0℃a current transmission ratio of +.>Maximum value (S)>Less than->When the temperature x is lower than 0 c,is greater than->When the temperature x is higher than 0 ℃.
In another embodiment, the relation between the temperature and the current transmission ratio is determined according to a performance model of the phototransistor, and the related parameters of the phototransistor are set according to different temperatures.
In another embodiment, the high voltage sampling module further includes an error time calculating unit, configured to calculate an error time of the phototransistor, and add the error time when the sampling period is set, so as to form a final sampling period.
The working principle of the technical scheme is as follows: the scheme adopted by the embodiment is that the high-voltage sampling module further comprises an error time calculating unit for calculating the error time of the phototriode, and when the sampling period is set, the error time is added to form a final sampling period.
The beneficial effects of the technical scheme are as follows: the scheme provided by the embodiment is adopted, the high-voltage sampling module further comprises an error time calculation unit, the error time calculation unit is used for calculating the error time of the phototriode, and the error time is added when the sampling period is set, so that the final sampling period is formed. The rationality of sampling period can be further guaranteed through setting up error time, the accuracy of output signal is guaranteed.
In another embodiment, the error time calculation unit includes:
a first average value calculation subunit, configured to calculate a first average value of emitter barrier capacitance when the bias voltage of the phototransistor changes from the forward voltage of the base-emitter to the forward conduction voltage of the emitter;
a second average value calculation subunit for calculating a second average value of the collector barrier capacitance when the bias voltage changes from the first voltage to the second voltage; the first voltage is: subtracting the forward turn-on voltage of the emitter from the collector-emitter voltage; the second voltage is: subtracting the output voltage from the forward conduction voltage of the emitter;
the equivalent calculation unit is used for dividing the first average value subtracted by the second average value by the base driving current to obtain an equivalent settlement result;
and the first error time obtaining unit is used for multiplying the equivalent settlement result by the sum of the forward conduction voltage of the emitter and the emitter-base voltage to obtain the first error time of the phototriode.
The working principle of the technical scheme is as follows: the scheme adopted by the embodiment is that the error time calculating unit comprises: a first average value calculation subunit, configured to calculate a first average value of emitter barrier capacitance when the bias voltage of the phototransistor changes from the forward voltage of the base-emitter to the forward conduction voltage of the emitter; a second average value calculation subunit for calculating a second average value of the collector barrier capacitance when the bias voltage changes from the first voltage to the second voltage; the first voltage is: subtracting the forward turn-on voltage of the emitter from the collector-emitter voltage; the second voltage is: subtracting the output voltage from the forward conduction voltage of the emitter; the equivalent calculation unit is used for dividing the first average value subtracted by the second average value by the base driving current to obtain an equivalent settlement result; and the first error time obtaining unit is used for multiplying the equivalent settlement result by the sum of the forward conduction voltage of the emitter and the emitter-base voltage to obtain the first error time of the phototriode.
The beneficial effects of the technical scheme are as follows: the error time calculation unit adopting the scheme provided by the embodiment comprises: a first average value calculation subunit, configured to calculate a first average value of emitter barrier capacitance when the bias voltage of the phototransistor changes from the forward voltage of the base-emitter to the forward conduction voltage of the emitter; a second average value calculation subunit for calculating a second average value of the collector barrier capacitance when the bias voltage changes from the first voltage to the second voltage; the first voltage is: subtracting the forward turn-on voltage of the emitter from the collector-emitter voltage; the second voltage is: subtracting the output voltage from the forward conduction voltage of the emitter; the equivalent calculation unit is used for dividing the first average value subtracted by the second average value by the base driving current to obtain an equivalent settlement result; and the first error time obtaining unit is used for multiplying the equivalent settlement result by the sum of the forward conduction voltage of the emitter and the emitter-base voltage to obtain the first error time of the phototriode. When the input pulse suddenly changes from low level to high level, the emitter of the phototriode is turned off, at this time, the input driving current cannot immediately drive the phototriode to turn on, but light is injected into the light detection unit of the phototriode, and the barrier capacitance of the emitter and the collector junction electrode is charged at the same time, so that the barrier of the two junctions is narrowed and becomes low. As the amount of light injected increases, the bias voltage of the emitter junction of the phototransistor gradually becomes positive, and electrons are fed back from the emitter junction to the input terminal. Thus, the error time depends on how fast the input current charges the emitter and collector barrier capacitances.
In another embodiment, the error time calculation unit further includes:
a first calculation unit for calculating an average value of emitter capacitances of the phototransistors;
a second calculation unit for calculating an average value of collector barrier capacitances of the phototransistors;
a mean value sum forming unit for adding the mean value of the emitter capacitance and the mean value of the collector barrier capacitance to form a mean value sum;
a voltage sum forming unit for forming a voltage sum by summing a forward turn-on voltage of the emitter and a reverse voltage of the base-emitter;
and a second error time forming unit for multiplying the sum of the average values and the sum of the voltages, dividing the multiplied result by the forward driving current of the light emitting diode, and forming a second error time of the phototransistor.
The working principle of the technical scheme is as follows: the scheme adopted by the embodiment is that the error time calculating unit further comprises: a first calculation unit for calculating an average value of emitter capacitances of the phototransistors; a second calculation unit for calculating an average value of collector barrier capacitances of the phototransistors; a mean value sum forming unit for adding the mean value of the emitter capacitance and the mean value of the collector barrier capacitance to form a mean value sum; a voltage sum forming unit for forming a voltage sum by summing a forward turn-on voltage of the emitter and a reverse voltage of the base-emitter; and a second error time forming unit for multiplying the sum of the average values and the sum of the voltages, dividing the multiplied result by the forward driving current of the light emitting diode, and forming a second error time of the phototransistor.
The beneficial effects of the technical scheme are as follows: the error time calculating unit adopting the scheme provided by the embodiment further comprises: a first calculation unit for calculating an average value of emitter capacitances of the phototransistors; a second calculation unit for calculating an average value of collector barrier capacitances of the phototransistors; a mean value sum forming unit for adding the mean value of the emitter capacitance and the mean value of the collector barrier capacitance to form a mean value sum; a voltage sum forming unit for forming a voltage sum by summing a forward turn-on voltage of the emitter and a reverse voltage of the base-emitter; and a second error time forming unit for multiplying the sum of the average values and the sum of the voltages, dividing the multiplied result by the forward driving current of the light emitting diode, and forming a second error time of the phototransistor. The scheme provided by the embodiment can also obtain error time through the other direction, so that the rationality of the sampling period is further ensured, and the accuracy of the output signal is ensured.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. A high voltage controlled low voltage power panel, comprising: the high-voltage sampling device comprises a high-voltage end, a high-voltage sampling module, a high-voltage end control switch, a conversion unit, a low-voltage end and a signal output module of the low-voltage end;
the conversion unit comprises a light emitting diode and a phototriode;
the high-voltage sampling module is used for setting a sampling period, and the high-voltage end control switch is automatically opened or closed according to the sampling period;
when the high-voltage end control switch is turned on, the light emitting diode is turned on and emits light, the light emitting diode emits light to enable the phototriode to be turned on, the signal output module of the low-voltage end outputs a low-potential signal, when the high-voltage end control switch is turned on, the light emitting diode is turned off, the phototriode is not turned on, and the signal output module of the low-voltage end outputs a high-potential signal.
2. The high-voltage control low-voltage power panel according to claim 1, wherein the high-voltage terminal is connected to the positive electrode of the light emitting diode through the resistor R1, the negative electrode of the light emitting diode is connected to the high-voltage terminal control switch, and the other end of the high-voltage terminal control switch is grounded;
the low-voltage end is connected with the collector electrode of the phototriode through a resistor R2, and the emitter electrode of the phototriode is grounded; the collector of the phototriode forms a signal output module at a low-voltage end through a resistor R3, and the signal output module at the low-voltage end is used for outputting a high-potential signal or a low-potential signal.
3. The high voltage controlled low voltage power panel of claim 1, wherein the high voltage sampling module is configured to set a sampling period, and comprises:
determining a sampling period according to the duty ratio of an output signal of a signal output module of a low-voltage end, wherein the duty ratio time of a high-potential signal in the duty ratio of the output signal corresponds to the opening time of a high-voltage end control switch of the sampling period, and the duty ratio time of the low-potential signal in the duty ratio of the output signal corresponds to the closing time of the high-voltage end control switch of the sampling period;
the duty ratio of the output signal is determined according to the requirement, a sampling period is set based on the duty ratio of the output signal, the high-voltage sampling module controls the opening time and the closing time of the high-voltage end control switch according to the sampling period, the opening or closing of the high-voltage end control switch controls the working state of the conversion unit, and then the output signal of high potential and low potential alternation output by the signal output module at the low-voltage end is controlled.
4. The high-voltage controlled low-voltage power panel according to claim 1, further comprising a mode setting unit, wherein the mode setting unit is connected to the high-voltage sampling module;
the mode setting unit is used for setting a plurality of scene modes, different scene modes correspond to different sampling periods, the corresponding sampling periods are called through the selection of the different scene modes by a user, and the opening time and the closing time of the high-voltage end control switch are controlled based on the corresponding sampling periods.
5. The high voltage controlled low voltage power panel according to claim 4, further comprising a timing unit connected to the mode setting unit and the high voltage sampling module for setting a plurality of timing units, each timing unit corresponding to one of the scene modes in the mode setting unit, setting a timing time for each of the scene modes, and a user setting a ranking of the scene modes, and performing automatic switching of the scene modes according to the ranking and the timing time of each of the scenes.
6. The high voltage controlled low voltage power panel of claim 1, further comprising a performance model of a phototransistor; determining performance parameters of the phototriode according to the performance model of the phototriode;
the performance model of the phototransistor includes:
the first linear unit is used for determining that the luminous power of the light-emitting diode changes along with the temperature to be in a first linear relation;
the second linear unit is used for determining that the amplification factor of the phototriode is in a second linear relation with the change of temperature;
the current transmission ratio calculation unit is used for determining a current transmission ratio function according to the luminous power of the light emitting diode and the amplification factor of the phototriode;
the derivative calculating unit is used for calculating the coefficient according to the first linear relation and the second linear relation so that the current transmission ratio is maximum when the temperature is 0 ℃ according to the derivative function obtained by derivative of the current transmission ratio function.
7. The high voltage controlled low voltage power panel of claim 6, wherein the relationship between temperature and current transfer ratio is determined based on a performance model of the phototransistor, and parameters associated with the phototransistor are set based on different temperatures.
8. A high voltage controlled low voltage power panel according to claim 3, wherein the high voltage sampling module further comprises an error time calculation unit for calculating an error time of the phototransistor, and adding the error time when setting the sampling period to form a final sampling period.
9. The high-voltage controlled low-voltage power panel according to claim 8, wherein the error time calculation unit includes:
a first average value calculation subunit, configured to calculate a first average value of emitter barrier capacitance when the bias voltage of the phototransistor changes from the forward voltage of the base-emitter to the forward conduction voltage of the emitter;
a second average value calculation subunit for calculating a second average value of the collector barrier capacitance when the bias voltage changes from the first voltage to the second voltage; the first voltage is: subtracting the forward turn-on voltage of the emitter from the collector-emitter voltage; the second voltage is: subtracting the output voltage from the forward conduction voltage of the emitter;
the equivalent calculation unit is used for dividing the first average value subtracted by the second average value by the base driving current to obtain an equivalent settlement result;
and the first error time obtaining unit is used for multiplying the equivalent settlement result by the sum of the forward conduction voltage of the emitter and the emitter-base voltage to obtain the first error time of the phototriode.
10. The high-voltage controlled low-voltage power supply board according to claim 8, wherein the error time calculation unit further includes:
a first calculation unit for calculating an average value of emitter capacitances of the phototransistors;
a second calculation unit for calculating an average value of collector barrier capacitances of the phototransistors;
a mean value sum forming unit for adding the mean value of the emitter capacitance and the mean value of the collector barrier capacitance to form a mean value sum;
a voltage sum forming unit for forming a voltage sum by summing a forward turn-on voltage of the emitter and a reverse voltage of the base-emitter;
and a second error time forming unit for multiplying the sum of the average values and the sum of the voltages, dividing the multiplied result by the forward driving current of the light emitting diode, and forming a second error time of the phototransistor.
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