CN116907563A - Method for eliminating influence of background interference magnetic field on performance change of Hall sensor - Google Patents
Method for eliminating influence of background interference magnetic field on performance change of Hall sensor Download PDFInfo
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Abstract
The invention belongs to the technical field of electromagnetic protection, and particularly relates to a method for eliminating the influence of a background interference magnetic field on the performance change of a Hall sensor, which comprises the following steps: selecting two identical Hall elements, applying the same current, and vertically placing the same Hall elements in an environmental magnetic field; determining an induced potential on a hall element to obtain an induced voltage; when a magnetic field is added to the other Hall element, the induction intensity of the Hall element in the vertical direction is overlapped by an environment magnetic field and a working magnetic field, and induction voltage is correspondingly generated; the respective induced voltages on the two Hall elements are differenced through a differential circuit, and the difference between the two voltages is obtained by adjusting the resistance value on the differential circuit, namely, the output voltage of the Hall elements is obtained under the working magnetic field state after the background interference magnetic field is eliminated. The invention provides an effective technical approach for ensuring the normal operation of the Hall sensor in the magnetic field background environment.
Description
Technical Field
The invention belongs to the technical field of electromagnetic protection, and particularly relates to a method for eliminating the influence of a background interference magnetic field on the performance change of a Hall sensor.
Background
A hall sensor is a sensor based on the hall effect, in which two magnetic poles are placed above and below a metal or a semiconductor to generate a magnetic field, the magnetic field passes through the metal or the semiconductor vertically, and a voltage is generated on the side of the metal or the semiconductor, which is perpendicular to the current direction, and this phenomenon is called the hall effect. Hall sensors are active devices that require a magnetic field to deflect electrons in a semiconductor to create a potential difference.
According to different designs, the hall sensors are divided into a linear hall sensor and a switch-type hall sensor. The switch type Hall sensor consists of a voltage stabilizer, a Hall element, a differential amplifying circuit, a Schmidt trigger and an output stage, and outputs a digital signal; when the external magnetic induction intensity exceeds the action point B p2 When the magnetic induction intensity is reduced to the action point B p2 The sensor output level is unchanged and is always reduced to the release point B p1 The sensor changes from low to high. The linear Hall sensor consists of a Hall element, a linear amplifier and a radio frequency follower, and outputs an analog signal which is in linear relation with the intensity of an externally applied magnetic field, and the linear Hall sensor is characterized in that L1 ～B L2 Has better linearity in the magnetic induction intensity range, and the saturation state is called when the magnetic induction intensity exceeds the range.
The hall sensor operates by changing the magnetic field passing through the hall element, and the induced electromotive force generated is related to the current passing through the hall element, the magnetic induction intensity, and the thickness of the hall element, and is essentially the deflection of charged particles moving in the semiconductor under the action of lorentz force in the magnetic field, and positive and negative charges are accumulated in the direction perpendicular to the current and the magnetic field of the hall element.
When the working environment of the Hall sensor has a magnetic field with certain magnetic induction intensity, the performance of the Hall sensor is reduced, and when the magnetic induction intensity of the environment reaches certain intensity, the Hall sensor can output an error signal; the key problem to be solved is to eliminate the interference magnetic field of the background so as to ensure the stable output performance of the Hall sensor.
Disclosure of Invention
First, the technical problem to be solved
The invention aims to solve the technical problems that: how to solve the problem of the influence of the interference magnetic field on the performance change of the Hall sensor.
(II) technical scheme
In order to solve the technical problems, the invention provides a method for eliminating the influence of a background interference magnetic field on the performance change of a Hall sensor, which comprises the following steps:
step 1, selecting two Hall elements of the same model, respectively leading the same current I to the two ends of each Hall element, and vertically placing the two Hall elements in an environment magnetic field with magnetic induction intensity B;
step 2, determining the induced potential on any one Hall element in the magnetic field environment, and grounding the low potential to obtain the induced voltage U generated on the Hall element 1 ；
Step 3, determining the induced potential on another Hall element in the magnetic field environment, grounding the low potential, and then increasing the working magnetic field with the magnetic induction intensity B' in the vertical direction of the Hall element, so that the Hall element sagsThe induction intensity in the straight direction is changed into B+B' by superposition of an environment magnetic field and a working magnetic field, and the induction voltage correspondingly generated is U 2 ；
Step 4, the respective induced voltages U of the two Hall elements are set 1 And U 2 The difference is made by a differential circuit, and the difference U between two paths of voltages is obtained by adjusting the resistance value on the differential circuit o Namely, after eliminating the background interference magnetic field, the output voltage of the Hall element is in the working magnetic field state.
In the step 1, two hall elements of the same type are selected and are vertically placed in an environment magnetic field with magnetic induction intensity of B, the magnetic field vertically passes through the two hall elements, and currents I with the same size are respectively passed through the same two ends of the two hall elements.
In the step 2, the low potential of the induced potential on one of the hall elements is grounded to obtain the magnetic induction intensity B of the ambient magnetic field, and when the passing current is I, the induced voltage generated at two ends of the hall element in the direction perpendicular to the ambient magnetic field and the current is U 1 。
In the step 3, the low potential of the induced potential of the other hall element in the environment of the environmental magnetic field is grounded, and the working magnetic field with the magnetic induction intensity of B ' is applied to the vertical direction of the hall element alone under the condition of not changing the magnitude of the passing current I on the hall element and the magnetic induction intensity of B ' of the environmental magnetic field, so that the induced intensity of the vertical direction of the hall element is superposed to be b+b ', and the induced voltage generated at two ends of the hall element perpendicular to the magnetic field and the current direction is U 2 。
In the step 4, the respective induced voltages U of the two hall elements are set 1 And U 2 The difference is made by a differential circuit, and the difference U between two paths of voltages is obtained by adjusting the resistance value on the differential circuit o That is, after the ambient magnetic field with the magnetic induction intensity B is eliminated, the output voltage of the hall element is outputted in the state of the operating magnetic field with the corresponding magnetic induction intensity B'.
In step 4, the eliminated ambient magnetic field is the background interference magnetic field.
In the step 4, the voltage generated on the two hall elements is passed through a differential circuit combining the reverse input and the forward input to obtain the potential difference of the two voltage signals on the two hall elements.
(III) beneficial effects
Compared with the prior art, the method for eliminating the influence of the interference magnetic field on the performance change of the Hall sensor by adopting the background cancellation technology is characterized in that two Hall elements of the same type are selected, the same current I is respectively conducted on the two ends of the Hall elements, and the two Hall elements are vertically placed in an environment magnetic field with the magnetic induction intensity of B; obtaining induced potential on Hall elements in magnetic field environment, grounding low potential on two Hall elements, and obtaining voltage U generated on one of Hall elements 1 The method comprises the steps of carrying out a first treatment on the surface of the When the working magnetic field with the magnetic induction intensity B 'is increased in the vertical direction of the other Hall element, the induction intensity B+B' in the vertical direction of the Hall element generates a voltage U 2 The method comprises the steps of carrying out a first treatment on the surface of the The voltage on the two Hall elements is differenced by a differential circuit, and the difference U between two voltage signals is determined by adjusting the resistance value on the differential circuit o Thus, the output signal of the Hall element under the action of the working magnetic field after the interference magnetic field is eliminated is obtained.
Drawings
Fig. 1 is a schematic diagram of the technical scheme of the present invention.
1 in, 1-Hall element 1#, 2-Hall element 2#, 3-operational amplifier, magnetic induction of B-environment magnetic field, magnetic induction of B' -working magnetic field, current passing through I-Hall element, U 1 -induced voltage of hall element 1# under magnetic field environment, U 2 -induced voltage of Hall element 2# under combined action of ambient magnetic field and working magnetic field, U O -output voltage after cancellation of disturbing magnetic field, R 1 、R 2 、R f 、R P -load resistors; up is the induced voltage signal U of Hall element 1#, under magnetic field environment 1 Through a load resistor R 1 The potential of the rear; u (U) N Is an induced voltage signal U of the Hall element 2# under the magnetic field environment 2 Through a load resistor R 2 The subsequent potential.
Detailed Description
For the purposes of clarity, content, and advantages of the present invention, a detailed description of the embodiments of the present invention will be described in detail below with reference to the drawings and examples.
In order to solve the technical problems, the invention provides a method for eliminating the influence of a background interference magnetic field on the performance change of a Hall sensor, which comprises the following steps:
step 1, selecting two Hall elements of the same model, respectively leading the same current I to the two ends of each Hall element, and vertically placing the two Hall elements in an environment magnetic field with magnetic induction intensity B;
step 2, determining the induced potential on any one Hall element in the magnetic field environment, and grounding the low potential to obtain the induced voltage U generated on the Hall element 1 ；
Step 3, determining the induced potential on another Hall element in the magnetic field environment, grounding the low potential, and then increasing the working magnetic field with the magnetic induction intensity of B 'in the vertical direction of the Hall element, wherein the induced intensity in the vertical direction of the Hall element is changed into B+B' by superposition of the environment magnetic field and the working magnetic field, and the corresponding generated induced voltage is U 2 ；
Step 4, the respective induced voltages U of the two Hall elements are set 1 And U 2 The difference is made by a differential circuit, and the difference U between two paths of voltages is obtained by adjusting the resistance value on the differential circuit o Namely, after eliminating the background interference magnetic field, the output voltage of the Hall element is in the working magnetic field state.
In the step 1, two hall elements of the same type are selected and are vertically placed in an environment magnetic field with magnetic induction intensity of B, the magnetic field vertically passes through the two hall elements, and currents I with the same size are respectively passed through the same two ends of the two hall elements.
In the step 2, the low potential of the induced potential on one of the hall elements is grounded to obtain the magnetic induction intensity of the ambient magnetic field as B, and when the passing current is I, the hall element is perpendicular to the ambient magnetic field and the currentThe induced voltage generated at two ends in the direction is U 1 。
In the step 3, the low potential of the induced potential of the other hall element in the environment of the environmental magnetic field is grounded, and the working magnetic field with the magnetic induction intensity of B ' is applied to the vertical direction of the hall element alone under the condition of not changing the magnitude of the passing current I on the hall element and the magnetic induction intensity of B ' of the environmental magnetic field, so that the induced intensity of the vertical direction of the hall element is superposed to be b+b ', and the induced voltage generated at two ends of the hall element perpendicular to the magnetic field and the current direction is U 2 。
In the step 4, the respective induced voltages U of the two hall elements are set 1 And U 2 The difference is made by a differential circuit, and the difference U between two paths of voltages is obtained by adjusting the resistance value on the differential circuit o That is, after the ambient magnetic field with the magnetic induction intensity B is eliminated, the output voltage of the hall element is outputted in the state of the operating magnetic field with the corresponding magnetic induction intensity B'.
In step 4, the eliminated ambient magnetic field is the background interference magnetic field.
In the step 4, the voltage generated on the two hall elements is passed through a differential circuit combining the reverse input and the forward input to obtain the potential difference of the two voltage signals on the two hall elements.
Example 1
The circuit design schematic diagram for eliminating the influence of the disturbing magnetic field on the performance change of the Hall sensor based on the background cancellation technology is shown in fig. 1, by selecting two Hall elements of the same model, one of which obtains the potential difference under the combined action of the background magnetic field environment and the working magnetic field, the other obtains the potential difference under the background magnetic field environment, the low potential on the two Hall elements is grounded, and the voltage U on the two Hall elements is obtained 1 And U 2 The two voltages are differenced through the differential circuit, so that the influence of an ambient magnetic field on the output signal of the Hall sensor is eliminated, and the Hall element performance is ensured to work normally in an environment with a magnetic field background.
The invention relates to a method for eliminating the influence of an interference magnetic field on the performance change of a Hall sensor based on a background cancellation technology, which comprises the following steps:
firstly, selecting two Hall elements 1# and 2# with the same model, respectively leading the same current I to two ends of the Hall elements, and vertically placing the two Hall elements in an environment magnetic field with magnetic induction intensity B;
a second step of obtaining an induced potential on the Hall element 1# in the magnetic field environment and grounding the low potential to determine a voltage U generated on the Hall element 1# 1 ；
Thirdly, obtaining the induction potential of the Hall element 2# in the magnetic field environment, grounding the low potential, and then increasing the working magnetic field with the magnetic induction intensity of B 'in the vertical direction of the Hall element 2# to obtain the induction intensity of B+B' in the vertical direction of the Hall element, wherein the generated voltage is U 2 ；
Fourth, the voltage on the two Hall elements is differenced by a differential circuit, and the difference U between the two voltage signals is obtained by adjusting the resistance value on the differential circuit o Namely, after eliminating the background interference magnetic field, the output signal of the Hall element is in the working magnetic field state.
Further, the specific operation steps of the fourth step are as follows: the voltage generated on the two Hall elements is combined with the reverse input and the forward input through a differential circuit to obtain the potential difference of two paths of voltage signals on the Hall elements. From the characteristics of the differential circuit, it is possible to obtain:
wherein U is 1 -induced voltage of hall element 1# under magnetic field environment, U 2 -induced voltage of Hall element 2# under combined action of ambient magnetic field and working magnetic field, U O -output voltage after cancellation of disturbing magnetic field, R 1 、R 2 、R f 、R P All being load electricityResistance; up is the induced voltage signal U of Hall element 1#, under magnetic field environment 1 Through a load resistor R 1 The potential of the rear; u (U) N Is an induced voltage signal U of the Hall element 2# under the magnetic field environment 2 Through a load resistor R 2 The potential of the rear;
wherein U is N ＝Up；
From the formulas (1) and (2), it is possible to obtain:
let R f /R 1 ＝R P /R 2 Then formula (3) can be simplified as:
let R f ＝R 1 The voltage generated on the Hall element under the working magnetic field after the magnetic field interference is eliminated can be obtained, so that the problem that the interference magnetic field influences the performance change of the Hall sensor is solved.
Example 2
The embodiment provides a method for eliminating the influence of an interference magnetic field on the performance change of a Hall sensor by adopting a background cancellation technology, which comprises the steps of selecting two Hall elements of the same type, then conducting the same current on the two ends of the two Hall elements, vertically placing the two Hall elements in a magnetic field environment with the magnetic induction intensity of B, and obtaining the potential difference on the Hall elements in the magnetic field environment by the same magnetic induction intensity of the magnetic field environment where the two Hall elements are positioned, grounding the low potential on the two Hall elements, and obtaining the voltage U generated on one of the Hall elements 1 The method comprises the steps of carrying out a first treatment on the surface of the When the working magnetic field with the magnetic induction intensity B 'is increased in the vertical direction of the other Hall element, the induction intensity B+B' in the vertical direction of the Hall element generates a voltage U 2 The method comprises the steps of carrying out a first treatment on the surface of the The voltage on the two Hall elements is differenced by a differential circuit, and the difference U between two voltage signals is determined by adjusting the resistance value on the differential circuit o Thus, the output signal of the Hall element under the working magnetic field after eliminating the interference magnetic field is obtained.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (10)
1. A method for eliminating the effect of a background interfering magnetic field on the performance change of a hall sensor, which is characterized by comprising the following steps:
step 1, selecting two Hall elements of the same model, respectively leading the same current I to the two ends of each Hall element, and vertically placing the two Hall elements in an environment magnetic field with magnetic induction intensity B;
step 2, determining the induced potential on any one Hall element in the magnetic field environment, and grounding the low potential to obtain the induced voltage U generated on the Hall element 1 ；
Step 3, determining the induced potential on another Hall element in the magnetic field environment, grounding the low potential, and then increasing the working magnetic field with the magnetic induction intensity of B 'in the vertical direction of the Hall element, wherein the induced intensity in the vertical direction of the Hall element is changed into B+B' by superposition of the environment magnetic field and the working magnetic field, and the corresponding generated induced voltage is U 2 ；
Step 4, the respective induced voltages U of the two Hall elements are set 1 And U 2 The difference is made by a differential circuit, and the difference U between two paths of voltages is obtained by adjusting the resistance value on the differential circuit o Namely, after eliminating the background interference magnetic field, the output voltage of the Hall element is in the working magnetic field state.
2. The method for eliminating the influence of the background disturbing magnetic field on the performance change of the hall sensor according to claim 1, wherein in the step 1, two hall elements of the same type are selected, and are vertically placed in an ambient magnetic field with the magnetic induction intensity of B, so that the magnetic field vertically passes through the two hall elements, and the currents I with the same magnitude are passed through the same ends of the two hall elements.
3. The method for eliminating influence of background disturbance magnetic field on Hall sensor performance variation according to claim 1, wherein in the step 2, a low potential of induced potential on one of the Hall elements is grounded to obtain magnetic induction intensity B of the ambient magnetic field, and when the passing current is I, induced voltage generated at two ends of the Hall element in a direction perpendicular to the ambient magnetic field and the current is U 1 。
4. The method according to claim 1, wherein in the step 3, the low potential of the induced potential of the other hall element in the environment of the ambient magnetic field is grounded, and the working magnetic field with the magnetic induction intensity B 'is applied to the hall element in the vertical direction alone without changing the magnitude of the passing current I and the magnetic induction intensity B of the ambient magnetic field, so that the induced intensity in the vertical direction of the hall element is superimposed to be B+B', and the induced voltage generated across the hall element in the vertical direction perpendicular to the magnetic field and the current direction is U 2 。
5. The method for eliminating influence of background magnetic field on Hall sensor performance variation according to claim 1, wherein in step 4, respective induced voltages U on two Hall elements are used 1 And U 2 The difference is made by a differential circuit, and the difference U between two paths of voltages is obtained by adjusting the resistance value on the differential circuit o That is, after the ambient magnetic field with the magnetic induction intensity B is eliminated, the output voltage of the hall element is outputted in the state of the operating magnetic field with the corresponding magnetic induction intensity B'.
6. The method of eliminating influence of ambient disturbing magnetic field on performance variation of hall sensor according to claim 5, wherein in step 4, the eliminated ambient magnetic field is ambient disturbing magnetic field.
7. The method for eliminating the influence of the background magnetic field on the performance variation of the hall sensor according to claim 5, wherein in the step 4, the potential difference of the two voltage signals on the two hall elements is obtained by a differential circuit combining the reverse input and the forward input.
8. The method for eliminating the influence of the background interference magnetic field on the performance change of the Hall sensor according to claim 5, wherein the method solves the problem that the interference magnetic field influences the performance change of the Hall sensor by adopting two Hall elements with the same model and combining a differential circuit.
9. The method for eliminating influence of the background interference magnetic field on the performance change of the Hall sensor according to claim 5, wherein the method is characterized in that two Hall elements of the same model are selected, one of the Hall elements obtains the induced voltage under the magnetic field background environment, the other one obtains the induced voltage under the combined action of the magnetic field background environment and the working magnetic field, and the induced voltages on the two Hall elements are differenced through a differential circuit, so that the influence of the environment magnetic field on the output voltage signal of the Hall sensor is eliminated, and the normal operation of the Hall element in the magnetic field environment is ensured.
10. The method for eliminating influence of the background interference magnetic field on the performance change of the Hall sensor according to claim 5, wherein the method belongs to the technical field of electromagnetic protection.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310827194.1A CN116907563A (en) | 2023-07-07 | 2023-07-07 | Method for eliminating influence of background interference magnetic field on performance change of Hall sensor |
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| CN202310827194.1A CN116907563A (en) | 2023-07-07 | 2023-07-07 | Method for eliminating influence of background interference magnetic field on performance change of Hall sensor |
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