CN116897320A - Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device - Google Patents

Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device Download PDF

Info

Publication number
CN116897320A
CN116897320A CN202280014601.0A CN202280014601A CN116897320A CN 116897320 A CN116897320 A CN 116897320A CN 202280014601 A CN202280014601 A CN 202280014601A CN 116897320 A CN116897320 A CN 116897320A
Authority
CN
China
Prior art keywords
group
radiation
actinic
acid
repeating unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280014601.0A
Other languages
Chinese (zh)
Inventor
山口修平
三好太朗
吉冈知昭
福崎英治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority claimed from PCT/JP2022/001257 external-priority patent/WO2022172689A1/en
Publication of CN116897320A publication Critical patent/CN116897320A/en
Pending legal-status Critical Current

Links

Abstract

The invention provides a actinic ray-sensitive or radiation-sensitive resin composition capable of reducing LWR of a formed pattern, a resist film, a pattern forming method and a manufacturing method of an electronic device. The actinic-ray-or radiation-sensitive resin composition of the present invention is a actinic-ray-or radiation-sensitive resin composition comprising a resin (a) having a repeating unit (a) that is a repeating unit having an ionic group that releases a release group by irradiation with actinic rays or radiation to generate an acid, and having a molecular weight of 300 or less, which is a repeating unit obtained by substituting the release group with a hydrogen atom, and the repeating unit (a) is a predetermined amount or more with respect to the total solid content of the actinic-ray-or radiation-sensitive resin composition.

Description

Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device
Technical Field
The present invention relates to a actinic-ray-or radiation-sensitive resin composition, a resist film, a pattern forming method, and a method for manufacturing an electronic device.
Background
Various methods have been studied as a pattern forming method, and the following methods are exemplified.
That is, a actinic-ray-or radiation-sensitive resin film (hereinafter also referred to as "resist film") formed using the actinic-ray-or radiation-sensitive resin composition is exposed to light, and the resist film is changed in solubility in a developer in a region reflecting the exposed pattern. Then, development is performed using a developer (an alkaline developer, an organic solvent-based developer, or the like), and the exposed or unexposed portions in the resist film are removed, thereby obtaining a desired pattern.
For example, patent document 1 discloses a pattern formation method in which a pattern is formed in a predetermined order using a material or the like containing a repeating unit having an aromatic group in a range of 10 mol% or more and 100 mol% or less of all repeating units, and containing a repeating unit having an acid generator group of a sulfonium salt in a range of 1 mol% or more and 30 mol% or less, and a polymer compound that is soluble in an alkaline developer by an acid as a base resin.
Technical literature of the prior art
Patent literature
Patent document 1: japanese patent application laid-open No. 2013-140268
Disclosure of Invention
Technical problem to be solved by the invention
As a result of research on the materials (actinic-ray-or radiation-sensitive resin composition, resist composition) described in patent document 1, the inventors of the present invention have found that it is difficult to reduce LWR (line width roughness: line width roughness) when patterning using the actinic-ray-or radiation-sensitive resin composition.
Accordingly, an object of the present invention is to provide a actinic ray-or radiation-sensitive resin composition capable of reducing LWR of a formed pattern.
The present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each of which is related to the above-mentioned actinic-radiation-sensitive or radiation-sensitive resin composition.
Means for solving the technical problems
The present inventors have found that the above problems can be solved by the following configuration.
[1]
A actinic-ray-or radiation-sensitive resin composition comprising a resin (A) having a repeating unit (a),
the repeating unit (a) has an ionic group which generates an acid by releasing a releasing group by irradiation with actinic rays or radioactive rays, and the molecular weight of the repeating unit obtained by substituting the releasing group with a hydrogen atom is 300 or less,
When the actinic-ray-or radiation-sensitive resin composition does not contain a compound that generates an acid upon irradiation with actinic rays or radiation, the molar amount of the repeating unit (a) is 0.50mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition,
when the actinic-ray-or radiation-sensitive resin composition contains a compound that generates an acid upon irradiation with actinic rays or radiation, the total molar amount of the repeating unit (a) and the compound is 0.50mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition.
[ 2 ] the actinic-ray-or radiation-sensitive resin composition according to [ 1 ], wherein,
the molecular weight of the repeating unit (a) obtained by substituting the release group with a hydrogen atom is 200 or less.
[ 3 ] the actinic-ray-or radiation-sensitive resin composition according to [ 1 ] or [ 2 ], which comprises the above-mentioned compound which is a low-molecular compound.
[ 4 ] the actinic-ray-or radiation-sensitive resin composition according to [ 3 ], wherein,
The above-mentioned compounds are ionic compounds.
[5]
The actinic-ray-or radiation-sensitive resin composition according to any one of [1] to [ 4 ], wherein,
the repeating unit (a) is a repeating unit represented by the general formula (1).
[ chemical formula 1]
In the general formula (1), a represents a group constituting a main chain of the resin.
L represents a single bond or a 2-valent linking group.
Z + Representing an organic cation.
[6]
The actinic-ray-or radiation-sensitive resin composition according to [ 5 ], wherein,
a is a group consisting of only atoms selected from the group consisting of hydrogen atoms and carbon atoms,
l is a single bond or a group consisting of only atoms selected from the group consisting of hydrogen atoms and carbon atoms.
[7]
The actinic-ray-or radiation-sensitive resin composition according to any one of [1] to [6], wherein,
the resin (a) is a resin having improved solubility in an alkaline developer by the action of an acid.
[8]
The actinic-ray-or radiation-sensitive resin composition according to any one of [1] to [7], wherein,
the resin (a) has a repeating unit represented by the general formula (A2).
[ chemical formula 2]
In the general formula (A2), R 101 、R 102 R is R 103 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.
L A Represents a single bond or a 2-valent linking group.
Ar A Represents an aromatic ring group.
k represents an integer of 1 to 5.
Wherein R is 102 Can be combined with Ar A Bonding, R at this time 102 Represents a single bond or an alkylene group.
[9]
The actinic-ray-or radiation-sensitive resin composition according to any one of [1] to [8], wherein,
the resin (A) contains a repeating unit having an acid-decomposable group,
the repeating unit having an acid-decomposable group is decomposed by the action of an acid to produce 1 or more groups selected from a carboxyl group and an aromatic hydroxyl group.
[10]
The actinic-ray-or radiation-sensitive resin composition according to [9], wherein,
the repeating unit having an acid-decomposable group is a repeating unit represented by any one of the general formulae (3) to (7).
[ chemical formula 3]
In the general formula (3), R 5 ～R 7 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group,Halogen atoms, cyano groups or alkoxycarbonyl groups.
L 2 Represents a single bond or a 2-valent linking group.
R 8 ～R 10 Each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. In addition, R 8 ～R 10 Can bond to each other to form a ring.
In the general formula (4), R 11 ～R 14 Each independently represents a hydrogen atom or an organic group. Wherein R is 11 R is R 12 Represents an organic group.
X 1 represents-CO-, -SO-or-SO 2 -。
Y 1 represents-O-, -S-, -SO-, -SO 2 -or-NR 34 -。R 34 Represents a hydrogen atom or an organic group.
L 3 Represents a single bond or a 2-valent linking group.
R 15 ～R 17 Each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. In addition, R 15 ～R 17 Can bond to each other to form a ring.
In the general formula (5), R 18 R is R 19 Each independently represents a hydrogen atom or an organic group.
R 20 R is R 21 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. In addition, R 20 And R is R 21 May bond to each other to form a ring.
In the general formula (6), R 22 ～R 24 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.
L 4 Represents a single bond or a 2-valent linking group.
Ar 1 Represents an aromatic ring group.
R 25 ～R 27 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
In addition, R 26 And R is R 27 May bond to each other to form a ring.
And R is 24 Or R is 25 Can be combined with Ar 1 And (5) bonding.
In the general formula (7), R 28 ～R 30 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group.
L 5 Represents a single bond or a 2-valent linking group.
R 31 R is R 32 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
R 33 Represents alkyl, cycloalkyl, aryl, aralkyl or alkenyl. In addition, R 32 And R is R 33 May bond to each other to form a ring.
[11]
The actinic-ray-or radiation-sensitive resin composition according to [10], wherein,
the repeating unit having an acid-decomposable group is a repeating unit represented by any one of the general formulae (6) to (7).
[12]
The actinic-ray-or radiation-sensitive resin composition according to any one of [1] to [11], wherein,
when the actinic-ray-or radiation-sensitive resin composition does not contain a compound that generates an acid upon irradiation with actinic rays or radiation, the molar amount of the repeating unit (a) is 0.70mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition,
when the actinic-ray-or radiation-sensitive resin composition contains a compound that generates an acid upon irradiation with actinic rays or radiation, the total molar amount of the repeating unit (a) and the compound is 0.70mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition.
[13]
The actinic-ray-or radiation-sensitive resin composition according to any one of [1] to [12], wherein,
When the actinic-ray-or radiation-sensitive resin composition does not contain a compound that generates an acid upon irradiation with actinic rays or radiation, the molar amount of the repeating unit (a) is 1.00mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition,
when the actinic-ray-or radiation-sensitive resin composition contains a compound that generates an acid upon irradiation with actinic rays or radiation, the total molar amount of the repeating unit (a) and the compound is 1.00mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition.
[14]
The actinic-ray-or radiation-sensitive resin composition according to any one of [1] to [ 13 ], wherein,
the above-mentioned actinic-ray-or radiation-sensitive resin composition contains the above-mentioned compound,
the above compound contains a photodegradable alkali compound.
[15]
A resist film formed using the actinic-ray-or radiation-sensitive resin composition described in any one of [1] to [14 ].
[16]
A pattern forming method, comprising:
a step of forming a resist film on a substrate using the actinic-ray-sensitive or radiation-sensitive resin composition of any one of [1] to [14 ];
Exposing the resist film; a kind of electronic device with high-pressure air-conditioning system
And developing the exposed resist film with a developer.
[17]
A method of manufacturing an electronic device comprising the pattern forming method described in [16 ].
Effects of the invention
According to the present invention, it is possible to provide a actinic ray-or radiation-sensitive resin composition capable of reducing LWR of a formed pattern.
The present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each of which is related to the above-mentioned actinic-radiation-sensitive or radiation-sensitive resin composition.
Detailed Description
The present invention will be described in detail below.
The constituent elements described below are described in terms of representative embodiments of the present invention, but the present invention is not limited to such embodiments.
In the labeling of the groups (atomic groups) in the present specification, it is not described that the substituted and unsubstituted labels include groups having substituents in addition to groups having no substituents, as long as the gist of the present invention is not impaired. For example, "alkyl" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
In the present specification, the term "organic group" means a group containing at least one carbon atom.
Unless otherwise indicated, substituents are 1-valent substituents.
The term "actinic rays" or "radiation" in the present specification means, for example, an open line spectrum of a mercury lamp, extreme ultraviolet rays typified by excimer laser, extreme ultraviolet rays (EUV: extreme Ultraviolet), X-rays, electron beams (EB: electron Beam), and the like. The term "light" in this specification means actinic rays or radiation.
Unless otherwise indicated, "exposure" in the present specification includes not only exposure by an open-line spectrum using a mercury lamp, extreme ultraviolet rays typified by excimer laser, extreme ultraviolet rays, X-rays, EUV, and the like, but also drawing by a particle beam such as an electron beam and an ion beam.
In the present specification, "to" is used to indicate the meaning of including the numerical values described before and after the "to the" as the lower limit value and the upper limit value.
The bonding direction of the 2-valent group labeled in this specification is not limited unless otherwise specified. For example, when Y in the compound represented by the formula "X-Y-Z" is-COO-, Y may be-CO-O-, or-O-CO-. And the above-mentioned compound may be "X-CO-O-Z", or "X-O-CO-Z".
In the present specification, (meth) acrylate means acrylate and methacrylate, and (meth) acrylic acid means acrylic acid and methacrylic acid.
In the present specification, the weight average molecular weight (Mw), the number average molecular weight (Mn), and the dispersity (also referred to as molecular weight distribution) (Mw/Mn) of the resin are defined as polystyrene-converted values by GPC measurement (solvent: tetrahydrofuran, flow rate (sample injection amount): 10. Mu.L, column (column): TSK gel Multipore HXL-M manufactured by TOSOH CORPORATION, column temperature: 40 ℃, flow rate: 1.0 mL/min, detector: differential refractive index detector (Refractive Index Detector)) using a GPC (Gel Permeation Chromatography ) apparatus (HLC-8120 GPC manufactured by TOSOH CORPORATION).
In the present specification, the composition ratio (molar ratio, mass ratio, etc.) of the resin is determined by 13 C-NMR (nuclear magnetic resonance: nuclear magnetic resonance).
In the present specification, the acid dissociation constant (pKa) represents the pKa in an aqueous solution, and specifically, is a value obtained by calculating a database based on a substituent constant of hamett (Hammett) and a known literature value using the software package 1 described below. The pKa values described in the present specification each represent a value obtained by calculation using the software package.
Software package 1: advanced Chemistry Development (ACD/Labs) Software V8.14for Solaris (1994-2007 ACD/Labs).
On the other hand, pKa can also be determined by a molecular orbital algorithm. As a specific method, there may be mentioned a method of calculating H in an aqueous solution based on a thermodynamic cycle + A method for calculating the dissociation free energy. Concerning H + The method of calculating the dissociation free energy may be calculated by DFT (density functional method), for example, but other various methods have been reported in literature and the like, and are not limited thereto. In addition, there are a plurality of software capable of implementing DFT, for example, gaussian16.
As described above, the pKa in the present specification refers to a value obtained by calculating a value based on a database of a substituent constant of hamite and a well-known literature value using the software package 1, but when pKa cannot be calculated by this method, a value obtained by Gaussian16 based on DFT (density functional method) is adopted.
Further, as described above, the pKa in the present specification refers to "pKa in aqueous solution", but when pKa in aqueous solution cannot be calculated, "pKa in dimethyl sulfoxide (DMSO) solution" is used.
In the present specification, examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.
[ photosensitive ray-or radiation-sensitive resin composition (resist composition) ]
The actinic-ray-or radiation-sensitive resin composition of the present invention is an actinic-ray-or radiation-sensitive resin composition comprising a resin (A) having a repeating unit (a),
the repeating unit (a) has an ionic group which generates an acid by releasing a releasing group by irradiation with actinic rays or radioactive rays, and the molecular weight of the repeating unit obtained by substituting the releasing group with a hydrogen atom is 300 or less,
when the actinic-ray-or radiation-sensitive resin composition does not contain a compound that generates an acid upon irradiation with actinic rays or radiation, the molar amount of the repeating unit (a) is 0.50mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition,
when the actinic-ray-or radiation-sensitive resin composition contains a compound that generates an acid upon irradiation with actinic rays or radiation, the total molar amount of the repeating unit (a) and the compound is 0.50mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition.
Hereinafter, the actinic ray-sensitive or radiation-sensitive resin composition is also referred to as "resist composition".
Hereinafter, a compound that generates an acid by irradiation with actinic rays or radiation is also simply referred to as a "photoacid generator".
The mechanism of action for solving the problems of the present invention by employing such a structure is not necessarily clear, but the present inventors speculate as follows.
The resist composition of the present invention contains 0.50mmol/g or more of a site (acid-generating site) having a function of generating an acid by decomposition by irradiation of actinic rays or radiation, relative to the total solid content. This increases the acid generation contrast when exposing a resist film formed using the resist film.
In the resist composition of the present invention, a part or all of the acid generating sites are present on the resin as ionic groups that release the release groups to generate acids. The repeating unit having an ionic group is a repeating unit having a molecular weight of 300 or less, in which a releasing group is replaced with a hydrogen atom, and the ionic structure is present in the vicinity of the main chain of the resin. Therefore, the ionic structures are spatially shielded, and the ionic structures are not easily aggregated with each other in the resist film. In addition, by supporting a part or the whole of the acid generating portion on the resin, plasticization of the resist film can be suppressed, and good EL (exposure latitude) can be maintained.
It is believed that LWR of a pattern formed using the resist composition is improved by the synergistic effect of these characteristics.
In addition, in the resist composition of the present invention, the EL (exposure latitude) of the resist film formed as described above is also excellent, and the pattern collapse suppression property of the formed pattern is also excellent.
The case where the resist composition of the present invention satisfies at least any one of the following is referred to as a case where LWR of the formed pattern can be further reduced, a case where EL of the formed resist film is more excellent, and a case where pattern collapse suppression of the formed pattern is more excellent.
The resist composition of the present invention will be described in detail below.
The resist composition of the present invention may be a positive resist composition (positive resist composition for forming a pattern) or a negative resist composition (negative resist composition for forming a pattern). The resist composition may be an alkaline development resist composition or an organic solvent development resist composition.
Among them, the resist composition of the present invention is preferably a positive resist composition. The resist composition of the present invention is preferably an alkaline development resist composition.
The resist composition of the invention is typically a chemically amplified resist composition.
Hereinafter, the various components of the resist composition will be described in detail.
[ resin (A) ]
The resist composition contains a resin (a).
The resin (a) has a repeating unit (a) having an ionic group that releases a release group by irradiation with actinic rays or radiation to generate an acid.
In the repeating unit (a), the acid is usually generated by forming an acidic group on the main chain side of the resin. And, it may be generated by the detached group being an acid.
That is, the resin (a) generally contains a repeating unit having a group that decomposes upon exposure to light and generates an acidic group. Therefore, the resin (a) generally increases in polarity by exposure to light, and thus increases in solubility in an alkaline developer and decreases in solubility in an organic solvent.
That is, in the pattern forming method of the present invention, typically, when an alkaline developer is used as the developer, a positive pattern is preferably formed, and when an organic developer is used as the developer, a negative pattern is preferably formed.
The resin (a) is also preferably a resin which improves the solubility in an alkaline developer by the action of an acid. For example, the resin (a) contains a repeating unit having an acid-decomposable group, so that the resin (a) can have a property of improving the solubility in an alkaline developer by the action of an acid.
The repeating unit having an acid-decomposable group will be described later.
< repeating unit (a) >
The resin (A) has a repeating unit (a).
The repeating unit (a) is a repeating unit having an ionic group (hereinafter also referred to as "specific functional group") that generates an acid by releasing a releasing group by irradiation with actinic rays or radiation.
Examples of the acid generated by the specific functional group include sulfonic acid, sulfonimide, carboxylic acid and phosphonic acid, and sulfonic acid is preferable.
Among the specific functional groups, the above-mentioned acid is generally produced by forming an acidic group on the main chain side of the resin.
That is, the specific functional group is a group which is decomposed by irradiation with actinic rays or radiation and generates an acidic group (sulfonic acid group, sulfonimide group, carboxylic acid group, phosphonic acid group, or the like) on the main chain side of the resin (a), and preferably a group which generates a sulfonic acid group on the main chain side of the resin (a).
The specific functional group may be a group having an onium salt structure, or may be a group having a betaine structure, and is preferably a group having an onium salt structure.
The repeating unit (a) is preferably a repeating unit represented by the general formula (1).
[ chemical formula 4]
In the general formula (1), a represents a group constituting a main chain of the resin.
A is preferably a group represented by any one of the following general formulae (a-1) to (a-6).
The group represented by any one of the general formulae (a-1) to (a-6) is preferably a group composed of only atoms selected from the group consisting of a hydrogen atom and a carbon atom.
[ chemical formula 5]
General formulae (a-1) to (a-6)) Wherein Ra independently represents a hydrogen atom, an alkyl group or a-CH group 2 -O-Ra 2 。Ra 2 Represents a hydrogen atom, an alkyl group or an acyl group. When there are a plurality of Ra in the same general formula, 2 Ra may be bonded to each other to form a ring. The alkyl group may be linear or branched, and the number of carbon atoms is preferably 1 to 6.
W represents a methylene group, an oxygen atom or a sulfur atom, respectively.
Rc 1 Rc and Rc 2 Each independently represents a hydrogen atom, an alkyl group or an alkoxy group. And 2 Rc bonded to the same carbon atom 1 Or Rc 2 Together, 1 oxygen atom can be formed. Namely, -C (Rc) 1 ) 2 -and-C (Rc) 2 ) 2 Each may be-CO-.
Y represents a nitrogen atom or a carbon atom. M is 0 when Y is a nitrogen atom, and m is 1 when Y is a carbon atom.
Rc 3 Represents a hydrogen atom or a substituent.
Rb each independently represents an organic group.
n1 represents an integer of 0 to 3.
n2 represents an integer of 0 to 5.
l represents 0 or 1.
* Indicating the bonding position relative to L.
In general formula (1), a is preferably a group consisting of only atoms selected from the group consisting of a hydrogen atom and a carbon atom.
Further, a is also preferably a group which contains at least one carbon atom and is composed of only an atom selected from a hydrogen atom and a carbon atom.
In the general formula (1), L represents a single bond or a 2-valent linking group.
The above-mentioned 2-valent linking group is preferably alkylene, phenylene, -CO-; -O-, -S-, -NRd-, and combinations thereof. Rd represents a hydrogen atom or an alkyl group (for example, having 1 to 6 carbon atoms).
The alkylene group may be linear or branched and has 1 to 6 carbon atoms, for example. The substituent that the alkylene group may have is preferably a halogen atom (fluorine atom or the like).
As the above-mentioned "group composed of a combination thereof", examples include-CO-O-; -CO-O-alkylene-, -CO-O-phenylene-; -CO-NRd-, -CO-NRd-alkylene-and-CO-NRd-phenylene-.
In general formula (1), L is preferably a single bond or a group composed of only atoms selected from the group consisting of a hydrogen atom and a carbon atom.
In addition, L is also preferably a group which contains at least one carbon atom and is composed of only atoms selected from the group consisting of a hydrogen atom and a carbon atom.
In the general formula (1), Z + Representing an organic cation.
Z + Generally corresponds to a releasing group in an ionic group that releases a releasing group by irradiation with actinic rays or radiation to generate an acid.
The organic cations are preferably each independently an organic cation represented by formula (ZaI) (cation (ZaI)) or an organic cation represented by formula (ZaII) (cation (ZaII)).
[ chemical formula 6]
R 204 -I + -R 205 (ZaII)
In the above-mentioned formula (ZaI),
R 201 、R 202 r is R 203 Each independently represents an organic group.
As R 201 、R 202 R is R 203 The number of carbon atoms of the organic group of (2) is usually 1 to 30, preferably 1 to 20. And R is 201 ～R 203 The 2 groups may be bonded to form a ring structure, or may contain an oxygen atom, a sulfur atom, an ester group, an amide group or a carbonyl group in the ring. As R 201 ～R 203 Examples of the groups formed by bonding 2 of the above groups include alkylene groups (e.g., butylene, pentylene, etc.) and-CH 2 -CH 2 -O-CH 2 -CH 2 -。
Preferable examples of the organic cation represented by the formula (ZaI) include a cation (ZaI-1), a cation (ZaI-2), an organic cation represented by the formula (ZaI-3 b) (cation (ZaI-3 b)), and an organic cation represented by the formula (ZaI-4 b) (cation (ZaI-4 b)) described later.
First, a cation (ZaI-1) will be described.
The cation (ZaI-1) is R in the above formula (ZaI) 201 ～R 203 At least one of which is an aryl sulfonium cation of an aryl group.
In the aryl sulfonium cation, R can be 201 ～R 203 All being aryl groups, or R 201 ～R 203 Part of which is aryl, and the rest is alkyl or cycloalkyl.
And R is 201 ～R 203 Wherein 1 is aryl, R 201 ～R 203 The remaining 2 of the groups may be bonded to form a ring structure, or may contain an oxygen atom, a sulfur atom, an ester group, an amide group or a carbonyl group in the ring.
As R 201 ～R 203 Examples of the groups bonded to 2 of the above groups include alkylene AL, -aromatic ring group-alkylene AL-aromatic ring group-, -aromatic ring group-and-aromatic ring group-O-aromatic ring group-. The alkylene group AL may be a linear or branched alkylene group. The number of carbon atoms of the alkylene group AL is preferably 1 to 6. And, 1 or more of the methylene groups constituting the alkylene group AL may be substituted with an oxygen atom, a sulfur atom, an ester group, an amide group and/or a carbonyl group. Examples of alkylene AL include butylene, pentylene and-CH 2 -CH 2 -O-CH 2 -CH 2 -)。
Examples of the aryl sulfonium cation include triarylsulfonium cations, diarylalkyl sulfonium cations, aryl dialkyl sulfonium cations, diarylmethyl sulfonium cations, and aryl dicycloalkyl sulfonium cations.
2 aryl groups of the triarylsulfonium cation, the diarylalkyl sulfonium cation, and the diarylcycloalkyl sulfonium cation are not bound to each other by S + May have, in addition to the linkage of (C), a single bond or via a divalent linking group (-O-, -S-, alkylene or a group derived therefrom A group formed by a combination of (a) and the like).
The aryl group contained in the aryl sulfonium cation is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure such as an oxygen atom, a nitrogen atom, or a sulfur atom. Examples of the heterocyclic structure include pyrrole residues, furan residues, thiophene residues, indole residues, benzofuran residues, and benzothiophene residues. When the aryl sulfonium cation has 2 or more aryl groups, the 2 or more aryl groups may be the same or different.
The alkyl group or cycloalkyl group of the aryl sulfonium cation is preferably a linear alkyl group having 1 to 15 carbon atoms, a branched alkyl group having 3 to 15 carbon atoms or a cycloalkyl group having 3 to 15 carbon atoms, and more preferably a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a cyclopropyl group, a cyclobutyl group, a cyclohexyl group or the like.
R 201 ～R 203 The substituents that may be included in the aryl group, the alkyl group, and the cycloalkyl group are preferably, independently, an alkyl group (for example, having 1 to 15 carbon atoms), a cycloalkyl group (for example, having 3 to 15 carbon atoms), an aryl group (for example, having 6 to 14 carbon atoms), an alkoxy group (for example, having 1 to 15 carbon atoms), a cycloalkylalkoxy group (for example, having 1 to 15 carbon atoms), a cycloalkylsulfonyl group (for example, having 1 to 15 carbon atoms), a halogen atom (for example, a fluorine atom, an iodine atom), a hydroxyl group, a carboxyl group, an ester group, a sulfinyl group, a sulfonyl group, an alkylthio group, a phenylthio group, or the like.
The substituent may have a substituent, for example, the alkyl group may preferably have a halogen atom as a substituent, and may be a halogenated alkyl group such as a trifluoromethyl group.
The substituents are also preferably combined in any manner to form an acid-decomposable group.
The acid-decomposable group is a group that is decomposed by the action of an acid to generate a polar group, and is preferably a structure in which the polar group is protected by an acid-cleavable group that is cleaved by the action of an acid. The acid-decomposable group, the acid-cleavable group and the polar group are as follows.
Next, the cation (ZaI-2) will be described.
Cation (ZaI-2) is R in formula (ZaI) 201 ～R 203 Each independently represents a cation of an organic group having no aromatic ring. Here, the aromatic ring also includes an aromatic ring containing a heteroatom.
As R 201 ～R 203 The organic group having no aromatic ring is usually 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.
R 201 ～R 203 Preferably, each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group, more preferably a linear or branched 2-oxo-alkyl group, a 2-oxo-cycloalkyl group or an alkoxycarbonylmethyl group, and still more preferably a linear or branched 2-oxo-alkyl group.
R 201 ～R 203 Examples of the alkyl group and cycloalkyl group include a linear alkyl group having 1 to 10 carbon atoms, a branched alkyl group having 3 to 10 carbon atoms (e.g., methyl, ethyl, propyl, butyl and pentyl) and a cycloalkyl group having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl and norbornyl).
R 201 ～R 203 May be further substituted with a halogen atom, an alkoxy group (for example, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group or a nitro group.
And R is 201 ～R 203 The substituents of (2) are also preferably each independently forming an acid-decomposable group by any combination of substituents. The acid-decomposable group is as described below.
Next, the cation (ZaI-3 b) will be described.
The cation (ZaI-3 b) is a cation represented by the following formula (ZaI-3 b).
[ chemical formula 7]
In the formula (ZaI-3 b),
R 1c ～R 5c each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, or an aryloxy groupAn alkoxycarbonyl group, an alkylcarbonyloxy group, a cycloalkylcarbonyloxy group, a halogen atom, a hydroxyl group, a nitro group, an alkylthio group or an arylthio group.
R 6c R is R 7c Each independently represents a hydrogen atom, an alkyl group (t-butyl group, etc.), a cycloalkyl group, a halogen atom, a cyano group or an aryl group.
R x R is R y Each independently represents alkyl, cycloalkyl, 2-oxoalkyl, 2-oxocycloalkyl, alkoxycarbonylalkyl, allyl or vinyl.
And R is 1c ～R 7c And R is x R is R y The substituents of (2) are also preferably each independently forming an acid-decomposable group by any combination of substituents. The acid-decomposable group is as described below.
R 1c ～R 5c More than 2 of any one of R 5c And R is R 6c 、R 6c And R is R 7c 、R 5c And R is R x R is as follows x And R is R y May be bonded to each other to form rings, and the rings may each independently contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond.
Examples of the ring include an aromatic or non-aromatic hydrocarbon ring, an aromatic or non-aromatic heterocyclic ring, and a polycyclic condensed ring obtained by combining 2 or more of these rings. The ring may be a 3-to 10-membered ring, preferably a 4-to 8-membered ring, more preferably a 5-or 6-membered ring.
As R 1c ～R 5c More than 2 of any one of R 6c And R is R 7c R is as follows x And R is R y Examples of the group formed by bonding include alkylene groups such as butylene and pentylene. The methylene group in the alkylene group may be substituted with a hetero atom such as an oxygen atom.
As R 5c And R is R 6c R is as follows 5c And R is R x The group formed by bonding is preferably a single bond or an alkylene group. Examples of the alkylene group include a methylene group and an ethylene group.
R 1c ～R 5c 、R 6c 、R 7c 、R x 、R y And R is 1c ～R 5c More than 2 of any one of R 5c And R is R 6c 、R 6c And R is R 7c 、R 5c And R is R x R is R x And R is R y The rings formed by bonding each other may have a substituent.
Next, the cation (ZaI-4 b) will be described.
The cation (ZaI-4 b) is a cation represented by the following formula (ZaI-4 b).
[ chemical formula 8]
In the formula (ZaI-4 b),
l represents an integer of 0 to 2.
r represents an integer of 0 to 8.
R 13 Represents a hydrogen atom, a halogen atom (for example, a fluorine atom, an iodine atom or the like), a hydroxyl group, an alkyl group, a haloalkyl group, an alkoxy group, a carboxyl group, an alkoxycarbonyl group or a group having a cycloalkyl group (the cycloalkyl group itself may be a group partially containing a cycloalkyl group). These groups may have a substituent.
R 14 Represents a hydroxyl group, a halogen atom (for example, a fluorine atom, an iodine atom or the like), an alkyl group, a haloalkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group or a group having a cycloalkyl group (the cycloalkyl group itself may be a group partially containing a cycloalkyl group). These groups may have a substituent. When there are a plurality of R 14 In this case, each of the above groups independently represents a hydroxyl group or the like.
R 15 Each independently represents an alkyl group, a cycloalkyl group or a naphthyl group. 2R 15 May bond to each other to form a ring. When 2R 15 When bonded to each other to form a ring, a hetero atom such as an oxygen atom or a nitrogen atom may be contained in the ring skeleton. In one embodiment, 2R 15 When bonded to each other to form a ring structure, 2R are preferable 15 Bonded to each other to form an alkylene group. In addition, the alkyl, the cycloalkyl and the naphthyl, and 2R 15 Rings (2R) bonded to each other 15 Alkylene groups bonded to each other, etc.) may have a substituent.
In formula (ZaI-4 b), R 13 、R 14 R is R 15 The alkyl group of (2) is linear or branched. The number of carbon atoms of the alkyl group is preferably 1 to 10. More preferably, the alkyl group is methyl, ethyl, n-butyl, tert-butyl, or the like.
And R is 13 ～R 15 And R is x R is R y Each substituent of (2) also preferably forms an acid-decomposable group independently of each other through any combination of substituents. The acid-decomposable group is as described below.
Next, the formula (ZaII) will be described.
In the formula (ZaII), R 204 R is R 205 Each independently represents aryl, alkyl or cycloalkyl.
R 204 R is R 205 Preferably phenyl or naphthyl, more preferably phenyl. R is R 204 R is R 205 The aryl group of (a) may be an aryl group containing a heterocyclic ring having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the skeleton of the aryl group having a heterocycle include pyrrole, furan, thiophene, indole, benzofuran, and benzothiophene.
R 204 R is R 205 The alkyl group and cycloalkyl group of (a) are preferably a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group having 3 to 10 carbon atoms (e.g., methyl, ethyl, propyl, butyl or pentyl) or a cycloalkyl group having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl or norbornyl).
R 204 R is R 205 The aryl, alkyl and cycloalkyl groups of (a) may each independently have a substituent. As R 204 R is R 205 Examples of the substituent that may be contained in the aryl group, the alkyl group and the cycloalkyl group include an alkyl group (for example, having 1 to 15 carbon atoms), a cycloalkyl group (for example, having 3 to 15 carbon atoms), an aryl group (for example, having 6 to 15 carbon atoms), an alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group and a phenylthio group. And R is 204 R is R 205 The substituents of (2) also preferably each independently form an acid decomposition by any combination of substituentsA sex group. The acid-decomposable group is as described below.
In the repeating unit (a), a releasing group (e.g., Z in the general formula (1) + ) The molecular weight of the repeating unit substituted with a hydrogen atom is 300 or less, preferably 200 or less. The lower limit of the molecular weight is preferably 72 or more, more preferably 100 or more.
The repeating unit (a) is exemplified below.
In the following examples, the cationic moiety (in formula (1) and Z may be appropriately replaced + Corresponding portion) and other portions.
[ chemical formula 9]
[ chemical formula 10]
[ chemical formula 11]
[ chemical formula 12]
[ chemical formula 13]
The repeating unit (a) may be used alone or in combination of 1 kind or 2 or more kinds.
The content of the repeating unit (a) is preferably 1 to 80 mol%, more preferably 5 to 70 mol%, and even more preferably 7 to 60 mol% with respect to all the repeating units of the resin (a).
< repeating units having acid-decomposable groups >)
The resin (a) further preferably contains a repeating unit having an acid-decomposable group.
The repeating unit having an acid-decomposable group is preferably a repeating unit different from the repeating unit described above.
The acid-decomposable group refers to a group that is decomposed by the action of an acid to produce a polar group. The acid-decomposable group preferably has a structure in which a polar group is protected by an acid releasing group which is released by the action of an acid. That is, the resin (a) containing a repeating unit having an acid-decomposable group is decomposed by the action of an acid, and a polar group is generated. The resin having the repeating unit increases in polarity by the action of an acid, so that the solubility in an alkaline developer increases, and the solubility in an organic solvent decreases.
The polar group is preferably an alkali-soluble group, and examples thereof include carboxyl groups, aromatic hydroxyl groups (phenolic hydroxyl groups and the like), fluorinated alcohol groups, sulfonic acid groups, phosphoric acid groups, sulfonamide groups, sulfonylimide groups, (alkylsulfonyl) (alkylcarbonyl) methylene groups, (alkylsulfonyl) (alkylcarbonyl) imide groups, bis (alkylcarbonyl) methylene groups, bis (alkylcarbonyl) imide groups, bis (alkylsulfonyl) methylene groups, bis (alkylsulfonyl) imide groups, tris (alkylsulfonyl) methylene groups, and other acidic groups such as alcoholic hydroxyl groups.
Among them, the polar group is preferably a carboxyl group, an aromatic hydroxyl group (phenolic hydroxyl group or the like), a fluorinated alcohol group (preferably hexafluoroisopropanol group) or a sulfonic acid group, and more preferably a carboxyl group or an aromatic hydroxyl group (phenolic hydroxyl group or the like).
That is, the repeating unit having an acid-decomposable group is preferably decomposed by the action of an acid, and 1 or more groups selected from a carboxyl group, an aromatic hydroxyl group (a phenolic hydroxyl group or the like), a fluorinated alcohol group, and a sulfonic acid group are generated, and more preferably 1 or more groups selected from a carboxyl group and an aromatic hydroxyl group (a phenolic hydroxyl group or the like) are generated.
Examples of the acid-releasing group that is released by the action of an acid include groups represented by any of formulas (Y1) to (Y4).
Formula (Y1): -C (Rx) 1 ) (Rx 2 ) (Rx 3 )
Formula (Y2): -C (=o) OC (Rx 1 ) (Rx 2 ) (Rx 3 )
Formula (Y3): -C (R) 36 ) (R 37 ) (OR 38 )
Formula (Y4): c (Rn) (H) (Ar) A-5,
in the formula (Y1) and the formula (Y2), rx 1 ～Rx 3 Each independently represents an alkyl group (linear or branched), a cycloalkyl group (monocyclic or polycyclic), an aryl group (monocyclic or polycyclic), an aralkyl group or an alkenyl group (linear or branched). Where possible, these groups are also preferably substituted with fluorine atoms or groups containing fluorine atoms.
In addition, when Rx 1 ～Rx 3 When all of (a) are alkyl groups (straight chain or branched), rx is preferable 1 ～Rx 3 At least 2 of which are methyl groups.
Of these, rx is preferred 1 ～Rx 3 Each independently represents a linear or branched alkyl group, more preferably Rx 1 ～Rx 3 Each independently represents a linear alkyl group.
Rx 1 ～Rx 3 May be bonded to each other to form a ring (single ring or multiple rings).
Rx 1 ～Rx 3 The alkyl group of (a) is preferably an alkyl group having 1 to 5 carbon atoms such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a tert-butyl group.
Rx 1 ～Rx 3 The cycloalkyl group in (a) is preferably a monocyclic cycloalkyl group such as cyclopentyl or cyclohexyl, or a polycyclic cycloalkyl group such as norbornyl, tetracyclodecyl, tetracyclododecyl or adamantyl.
Rx 1 ～Rx 3 The aryl group of (a) is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include phenyl, naphthyl and anthracenyl.
Rx 1 ～Rx 3 The aralkyl group of (2) is preferably an aralkyl group having 7 to 20 carbon atoms.
Rx 1 ～Rx 3 Alkenyl groups of (2) are preferably vinyl groups。
Rx 1 ～Rx 3 The ring formed by bonding 2 of these are preferably cycloalkyl groups. Rx (x) 1 ～Rx 3 The cycloalkyl group bonded to 2 of these groups is preferably a monocyclic cycloalkyl group such as cyclopentyl or cyclohexyl, or a polycyclic cycloalkyl group such as norbornyl, tetracyclodecyl, tetracyclododecyl or adamantyl, more preferably a monocyclic cycloalkyl group having 5 to 6 carbon atoms.
Rx 1 ～Rx 3 Of cycloalkyl groups formed by bonding 2 of the above groups to each other, for example, 1 of methylene groups constituting the ring may be substituted with a group having a heteroatom such as an oxygen atom, a heteroatom such as a carbonyl group, or a vinylidene group. In addition, in such cycloalkyl groups, 1 or more (for example, 1 to 2) of the ethylene groups constituting the cycloalkane ring may be substituted with a vinyl group (vinyl).
The group represented by the formula (Y1) or the formula (Y2) is also preferably, for example, rx 1 Is methyl or ethyl, and Rx 2 With Rx 3 Bonding to form the cycloalkyl group.
And, in the formula (Y1) or (Y2), rx 1 ～Rx 3 Is bonded to form a cycloalkenyl group, wherein the above cycloalkenyl group is represented by the formula (Y1) or (Y2), "C (Rx) 1 )(Rx 2 )(Rx 3 ) When a vinylidene group is present at a position adjacent to C (carbon atom) as defined in "Rx to Rx 3 The remaining one of (2) may be a hydrogen atom.
In the formula (Y3), R 36 ～R 38 Each independently represents a hydrogen atom or an organic group. R is R 37 And R is R 38 May bond to each other to form a ring. Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. R is R 36 Hydrogen atoms are also preferred.
As R in the formula (Y3) 36 ～R 38 Examples of the alkyl, cycloalkyl, aryl, aralkyl and alkenyl groups represented by the formula (Y1) and the formula (Y2) include Rx 1 ～Rx 3 Alkyl, cycloalkyl, aryl, aralkyl, and alkenyl groups are described.
R 37 And R is R 38 Can be mutually connected withBonding to form a ring.
And R is 38 May be bonded to the backbone of the repeating unit. R at this time 38 Alkylene groups such as methylene are preferred.
The formula (Y3) is preferably a group represented by the following formula (Y3-1).
[ chemical formula 14]
Here, L 1 L and L 2 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a group formed by combining them (for example, a group formed by combining an alkyl group and an aryl group).
M represents a single bond or a 2-valent linking group.
Q represents an alkyl group which may contain a heteroatom, a cycloalkyl group which may contain a heteroatom, an aryl group which may contain a heteroatom, an amino group, an ammonium group, a mercapto group, a cyano group, an aldehyde group, or a group which is a combination thereof (for example, a group which is a combination of an alkyl group and a cycloalkyl group).
In the alkyl group and the cycloalkyl group, for example, 1 of the methylene groups may be substituted with a heteroatom such as an oxygen atom or a heteroatom such as a carbonyl group.
In addition, L is preferable 1 L and L 2 One of which is a hydrogen atom and the other is an alkyl group, a cycloalkyl group, an aryl group, or a group formed by combining an alkylene group with an aryl group.
Q, M and L 1 May be bonded to form a ring (preferably a 5-membered ring or a 6-membered ring). Q may be bonded to a part of an acid group protected by a group represented by the formula (Y3-1) to form a ring. Q may be bonded to the backbone of the repeating unit to form a ring.
L is preferable from the viewpoint of miniaturization of the pattern 2 Is a secondary or tertiary alkyl group, more preferably a tertiary alkyl group. Examples of the secondary alkyl group include isopropyl, cyclohexyl and norbornyl groups, and examples of the tertiary alkyl group include tertiary butyl and adamantyl groups. In these modes, tg (glass transition temperature) and activation energy increase, and therefore This can ensure film strength and suppress blurring.
In the formula (Y4), ar represents an aromatic ring group. Rn represents alkyl, cycloalkyl or aryl. Rn and Ar may bond to each other to form a non-aromatic ring. Ar is preferably aryl.
From the viewpoint of excellent acid degradability of the repeating unit, it is also preferable that, when a non-aromatic ring is directly bonded to the polar group (or a residue thereof) in the acid-releasing group protecting the polar group, a ring member adjacent to a ring member directly bonded to the polar group (or a residue thereof) in the non-aromatic ring does not have a halogen atom such as a fluorine atom as a substituent.
Further, the acid-releasing group which is released by the action of an acid may also be a 2-cyclopentenyl group having a substituent (alkyl group or the like) such as a 3-methyl-2-cyclopentenyl group, and a cyclohexyl group having a substituent (alkyl group or the like) such as a 1, 4-tetramethylcyclohexyl group.
The repeating unit having an acid-decomposable group is preferably a repeating unit represented by any one of the formulae (3) to (7), more preferably a repeating unit represented by any one of the formulae (6) to (7).
[ chemical formula 15]
In the general formula (3), R 5 ～R 7 Each independently represents a hydrogen atom, an alkyl group (which may be straight-chain or branched, for example, having 1 to 6 carbon atoms), a cycloalkyl group (monocyclic or polycyclic, for example, having 3 to 15 ring members), a halogen atom, a cyano group or an alkoxycarbonyl group (which may be straight-chain or branched, for example, having 2 to 7 carbon atoms).
Wherein R is 5 Preferably a hydrogen atom or an alkyl group.
R 6 ～R 7 Preferably each independently is a hydrogen atom.
In the general formula (3), L 2 Represents a single bond or a 2-valent linking group.
As the above-mentioned 2-valent linking group, for example, it is possible toBy the method of-CO- -NR-, -CO-, -O-, -S-, -SO 2 Alkylene (preferably having 1 to 6 carbon atoms and may be straight-chain or branched), cycloalkylene (preferably having 3 to 15 carbon atoms), alkenylene (preferably having 2 to 6 carbon atoms), aliphatic heterocyclic group having 2 valence (preferably having 5 to 10 ring members having at least one nitrogen atom, oxygen atom, sulfur atom or selenium atom as a ring member atom), aromatic hydrocarbon ring having 2 valence (preferably having 6 to 10 ring members) and a 2 valence linking group obtained by combining a plurality of them. R in the above-mentioned-NR-represents a hydrogen atom or an organic group. The organic group is preferably an alkyl group (for example, having 1 to 6 carbon atoms).
In the general formula (3), R 8 ～R 10 Each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
As R in the general formula (3) 8 ～R 10 Examples of the alkyl, cycloalkyl, aryl, aralkyl and alkenyl groups represented by the above formula (Y1) and formula (Y2) include Rx 1 ～Rx 3 Alkyl, cycloalkyl, aryl, aralkyl, and alkenyl groups are described.
In addition, R 8 ～R 10 Can bond to each other to form a ring.
R in the general formula (3) 8 ～R 10 The ring formed by bonding 2 of them may be exemplified as Rx of the above formulae (Y1) and (Y2) 1 ～Rx 3 A ring is described as a ring formed by bonding 2 of the above.
In the general formula (4), R 11 ～R 14 Each independently represents a hydrogen atom or an organic group (preferably having 1 to 6 carbon atoms). Wherein R is 11 R is R 12 Represents an organic group.
In the general formula (4), X 1 represents-CO-, -SO-or-SO 2 -。
In the general formula (4), Y 1 represents-O-, -S-, -SO-, -SO 2 -or-NR 34 -。R 34 Represents a hydrogen atom or an organic group. The organic group is preferably an alkyl group (for example, having 1 to 6 carbon atoms).
In the general formula (4), L 3 Represents a single bond or a 2-valent linking group.
As L in the general formula (4) 3 The linker having a valence of 2 represented by the general formula (3) can be similarly mentioned as L 2 The represented 2-valent linking group.
In the general formula (4), R 15 ～R 17 Each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
As R in the general formula (4) 15 ～R 17 Examples of the alkyl, cycloalkyl, aryl, aralkyl and alkenyl groups represented by the above formula (Y1) and formula (Y2) include Rx 1 ～Rx 3 Alkyl, cycloalkyl, aryl, aralkyl, and alkenyl groups are described.
In addition, R 15 ～R 17 Can bond to each other to form a ring.
R in the general formula (4) 15 ～R 17 The ring formed by bonding 2 of them may be exemplified as Rx of the above formulae (Y1) and (Y2) 1 ～Rx 3 A ring is described as a ring formed by bonding 2 of the above.
In the general formula (5), R 18 R is R 19 Each independently represents a hydrogen atom or an organic group (preferably having 1 to 6 carbon atoms).
In the general formula (5), R 20 R is R 21 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
As R in the general formula (5) 20 R is R 21 Examples of the alkyl, cycloalkyl, aryl, aralkyl and alkenyl groups represented by the above formula (Y1) and formula (Y2) include Rx 1 ～Rx 3 Alkyl, cycloalkyl, aryl, aralkyl, and alkenyl groups are described.
In addition, R 20 And R is R 21 May bond to each other to form a ring.
R in the general formula (5) 20 And R is R 21 The ring formed by bonding to each other may be exemplified as Rx of the above formula (Y1) and formula (Y2) 1 ～Rx 3 A ring is described as a ring formed by bonding 2 of the above.
In the general formula (6), R 22 ～R 24 Each independently represents a hydrogen atom, an alkyl group (which may be straight-chain or branched, for example, having 1 to 6 carbon atoms), a cycloalkyl group (monocyclic or polycyclic, for example, having 3 to 15 ring members), a halogen atom, a cyano group or an alkoxycarbonyl group (which may be straight-chain or branched, for example, having 2 to 7 carbon atoms).
In the general formula (6), L 4 Represents a single bond or a 2-valent linking group.
As represented by L in the general formula (6) 4 The linker having a valence of 2 represented by the general formula (3) can be similarly mentioned as L 2 The represented 2-valent linking group.
In the formula (6), ar 1 Represents an aromatic ring group. The aromatic ring group may be a single ring or multiple rings, and may have 1 or more (for example, 1 to 3) heteroatoms as ring members. The number of ring members of the aromatic ring group is preferably 5 to 15.
Ar 1 Benzene ring groups are preferred.
In the general formula (6), R 25 ～R 27 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
As R in the general formula (6) 25 ～R 27 Examples of the alkyl, cycloalkyl, aryl, aralkyl and alkenyl groups represented by the above formula (Y1) and formula (Y2) include Rx 1 ～Rx 3 Alkyl, cycloalkyl, aryl, aralkyl, and alkenyl groups are described.
In addition, R 26 And R is R 27 May bond to each other to form a ring.
R in the general formula (6) 26 And R is R 27 R when bonded to each other to form a ring 26 And R is R 27 Preferably together form 1 linker of valence 2. As such a 2-valent linking group, there may be mentionedIn the same way, L in the general formula (3) is mentioned as 2 The group represented by the 2-valent linking group is preferably an alkylene group.
And R is 24 Or R is 25 Can be combined with Ar 1 And (5) bonding.
When R is 24 With Ar 1 R is preferably selected from the group consisting of 24 To be a single bond or a 2-valent linking group, bonded to Ar 1 The ring member atoms of the aromatic ring group are represented. As such a 2-valent linking group, there may be mentioned, as L in the above general formula (3) 2 The group represented by the 2-valent linking group is preferably an alkylene group.
And when R is 25 With Ar 1 R is preferably selected from the group consisting of 25 A 2-valent linking group bonded to Ar 1 The ring member atoms of the aromatic ring group are represented. As such a 2-valent linking group, there may be mentioned, as L in the above general formula (3) 2 The group represented by the 2-valent linking group is preferably an alkylene group.
In the general formula (7), R 28 ～R 30 Each independently represents a hydrogen atom, an alkyl group (which may be straight-chain or branched, for example, having 1 to 6 carbon atoms), a cycloalkyl group (monocyclic or polycyclic, for example, having 3 to 15 ring members), a halogen atom, a cyano group or an alkoxycarbonyl group (which may be straight-chain or branched, for example, having 2 to 7 carbon atoms).
In the general formula (7), L 5 Represents a single bond or a 2-valent linking group.
As represented by L in the general formula (7) 5 The linker having a valence of 2 represented by the general formula (3) can be similarly mentioned as L 2 The represented 2-valent linking group.
R 31 R is R 32 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
R 33 Represents alkyl, cycloalkyl, aryl, aralkyl or alkenyl.
As R in the general formula (7) 31 ～R 33 Alkyl, cycloalkyl, aryl,Aralkyl and alkenyl groups can be similarly mentioned as Rx represented by the above formula (Y1) and formula (Y2) 1 ～Rx 3 Alkyl, cycloalkyl, aryl, aralkyl, and alkenyl groups are described.
In addition, R 32 And R is R 33 May bond to each other to form a ring.
When R in the general formula (7) 32 And R is R 33 R when bonded to each other to form a ring 32 And R is R 33 Preferably together form 1 linker of valence 2. As such a 2-valent linking group, there may be mentioned, as L in the above general formula (3) 2 The group represented by the 2-valent linking group is preferably an alkylene group.
The repeating unit having an acid-decomposable group is exemplified below.
In the following formula Xa 1 Representation H, CH 3 、CF 3 CH (CH) 2 Each of OH and Rxa and Rxb independently represents a linear or branched alkyl group having 1 to 5 carbon atoms (e.g., methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, or tert-butyl).
[ chemical formula 16]
[ chemical formula 17]
[ chemical formula 18]
[ chemical formula 19]
[ chemical formula 20]
[ chemical formula 21]
The number of the repeating units having an acid-decomposable group may be 1 or 2 or more.
The content of the repeating unit having an acid-decomposable group is preferably 5 to 80 mol%, more preferably 10 to 70 mol%, and even more preferably 15 to 60 mol% with respect to all the repeating units of the resin (a).
< repeating units having an acid group >
The resin (a) may contain a repeating unit having an acid group.
The repeating unit having an acid group is preferably a repeating unit different from the repeating unit described above.
The acid group is preferably an acid group having a pKa of 13 or less. The acid dissociation constant of the acid group is preferably 13 or less, more preferably 3 to 13, and further preferably 5 to 10, as described above.
When the resin A has an acid group having a pKa of 13 or less, the content of the acid group in the resin A is not particularly limited, but is usually 0.2 to 6.0mmol/g. Among them, the concentration is preferably 0.8 to 6.0mmol/g, more preferably 1.2 to 5.0mmol/g, still more preferably 1.6 to 4.0mmol/g. If the content of the acid group is within the above range, development proceeds well, and the formed pattern is excellent in shape and resolution.
Examples of the acid group include a carboxyl group, a hydroxyl group, an aromatic hydroxyl group (phenolic hydroxyl group), a fluorinated alcohol group (preferably hexafluoroisopropanol group), a sulfonic acid group, a sulfonamide group, and an isopropanol group.
In the hexafluoroisopropanol group, 1 or more (preferably 1 to 2) of the fluorine atoms may be substituted with a group other than a fluorine atom (e.g., an alkoxycarbonyl group). This wayformed-C (CF) 3 )(OH)-CF 2 Also preferred as acid groups. In addition, 1 or more of the fluorine atoms may be substituted with groups other than fluorine atoms to form a group containing-C (CF) 3 )(OH)-CF 2 -a ring.
The repeating unit having an acid group may have a fluorine atom or an iodine atom.
The repeating unit having an acid group is preferably a repeating unit represented by the general formula (B).
[ chemical formula 22]
R 3 Represents a hydrogen atom or an organic group which may have a fluorine atom or an iodine atom.
An organic group which may have a fluorine atom or an iodine atom, preferably represented by-L 4 -R 8 A group represented by the formula (I). As L 4 Represents a single bond or an ester group. R is R 8 Examples thereof include an alkyl group which may have a fluorine atom or an iodine atom, a cycloalkyl group which may have a fluorine atom or an iodine atom, an aryl group which may have a fluorine atom or an iodine atom, or a combination thereof.
R 4 R is R 5 Each independently represents a hydrogen atom, a fluorine atom, an iodine atom, or an alkyl group which may have a fluorine atom or an iodine atom.
L 2 Represents a single bond, an ester group or an alkylene group (preferably having 1 to 6 carbon atoms, which may be straight or branched) 2 May be substituted by halogen atoms. ) A 2-valent group formed by combination.
L 3 An aromatic hydrocarbon ring group having a valence of (n+m+1) or an alicyclic hydrocarbon ring group having a valence of (n+m+1). Examples of the aromatic hydrocarbon ring group include a benzene ring group and a naphthalene ring group. The alicyclic hydrocarbon ring group may be a single ring or multiple rings, and examples thereof include cycloalkyl ring groups, norbornene ring groups, adamantane ring groups, and the like.
R 6 Represents a hydroxyl group or a fluorinated alcohol group. The fluorinated alcohol group is preferably a group represented by the following formula (3L)。
*-L 6X -R 6X (3L)
L 6X Represents a single bond or a 2-valent linking group. The 2-valent linking group is not particularly limited, for example, it is exemplified by-CO-; -O-, -SO 2 -、-NR A Alkylene groups (preferably having 1 to 6 carbon atoms, which may be linear or branched), and a 2-valent linking group formed by combining a plurality of them. As R A Examples thereof include a hydrogen atom and an alkyl group having 1 to 6 carbon atoms. The alkylene group may have a substituent. Examples of the substituent include a halogen atom (preferably a fluorine atom) and a hydroxyl group. As R 6X And represents hexafluoroisopropanol group.
In addition, when R 6 When hydroxyl is L 3 An aromatic hydrocarbon ring group having a valence of (n+m+1) is preferable.
R 7 Represents a halogen atom.
m represents an integer of 1 or more. m is preferably an integer of 1 to 3, and preferably an integer of 1 to 2.
n represents an integer of 0 or 1 or more. n is preferably an integer of 1 to 4.
Further, (n+m+1) is preferably an integer of 1 to 5.
The repeating unit having an acid group is also preferably a repeating unit represented by the general formula (A2), and the resin (a) also preferably has a repeating unit represented by the general formula (A2).
The repeating unit represented by the general formula (A2) is a repeating unit having an aromatic hydroxyl group as an acid group.
[ chemical formula 23]
In the general formula (A2), R 101 、R 102 R is R 103 Each independently represents a hydrogen atom, an alkyl group (which may be straight-chain or branched, for example, 1 to 6 carbon atoms), a cycloalkyl group (monocyclic or polycyclic, for example, 3 to 15 ring members), a halogen atom, a cyano group or an alkoxycarbonyl group (for example, 2 to 7 carbon atoms, the alkyl moiety may beStraight chain or branched chain).
In the general formula (A2), L A Represents a single bond or a 2-valent linking group.
As L in the general formula (A2) A The linker having a valence of 2 represented by the general formula (3) can be similarly mentioned as L 2 The represented 2-valent linking group.
Ar A Represents an aromatic ring group (e.g., a benzene ring group).
The aromatic ring group may be a single ring or multiple rings, and may have 1 or more (for example, 1 to 3) heteroatoms as ring members. The number of ring members of the aromatic ring group is preferably 5 to 15.
In the general formula (A2), k represents an integer of 1 to 5.
Wherein R is 102 Can be combined with Ar A Bonding, R at this time 102 Represents a single bond or an alkylene group (which may be linear or branched and has 1 to 6 carbon atoms, for example).
At this time, from Ar A The aromatic ring group represented by the above-mentioned single bond or the above-mentioned alkylene group is bonded to a carbon atom (R 101 Bonded carbon atoms).
The repeating unit having an acid group is exemplified below.
[ chemical formula 24]
In the following examples, a represents 1 or 2.
[ chemical formula 25]
[ chemical formula 26]
[ chemical formula 27]
[ chemical formula 28]
/>
Among the repeating units, the repeating units described below are preferable. Wherein R represents a hydrogen atom or a methyl group, and a represents 2 or 3.
[ chemical formula 29]
[ chemical formula 30]
[ chemical formula 31]
The number of the repeating units having an acid group may be 1 or 2 or more.
The content of the repeating unit having an acid group is preferably 1 to 80 mol%, more preferably 5 to 60 mol%, and even more preferably 10 to 50 mol% with respect to all the repeating units of the resin (a).
< repeat Unit having lactone group >
The resin (a) preferably further contains a repeating unit having a lactone group.
The repeating unit having a lactone group is preferably a repeating unit different from the repeating unit described above.
The repeating unit having a lactone group may also be used as the repeating unit (for example, a repeating unit having an acid-decomposable group).
The lactone group may have a lactone structure. The lactone structure is preferably a 5-to 7-membered ring lactone structure. Of these, lactone structures in which other ring structures are condensed on a 5-to 7-membered ring lactone structure in the form of a double ring structure or a helical structure are more preferable.
The resin (a) preferably has a repeating unit having a lactone group obtained by extracting 1 or more (for example, 1 to 2) hydrogen atoms of a lactone structure represented by any one of the following formulas (LC 1-1) to (LC 1-21).
Also, the lactone group may be directly bonded to the main chain. For example, the ring member atoms of the lactone group may constitute the main chain of the resin (a).
[ chemical formula 32]
The lactone structure may have a substituent (Rb) 2 ). As a substituent (Rb) 2 ) Examples thereof include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 8 carbon atoms, a carboxyl group, a halogen atom, a hydroxyl group, a cyano group, a group containing an acid-decomposable group (which may be the acid-decomposable group itself), a group containing a specific functional group (which may be the specific functional group itself), and a group composed of a combination thereof. n2 represents an integer of 0 to 4. When n2 is 2 or more, a plurality of Rb are present 2 May be different and there are a plurality of Rb 2 May bond to each other to form a ring.
Methylene groups of the ring members of the lactone structure which are not adjacent to-COO-or-O-, more than 1 (e.g., 1 to 2) of (a) may be substituted with a heteroatom such as-O-or-S-.
Examples of the repeating unit having a lactone group include a repeating unit represented by the following general formula (AI).
[ chemical formula 33]
In the general formula (AI), rb 0 Represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms.
As Rb 0 Preferred substituents which may be included in the alkyl group of (a) include hydroxyl groups and halogen atoms.
As Rb 0 Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom. Rb (Rb) 0 Preferably a hydrogen atom or a methyl group.
Ab represents a single bond, an alkylene group, a 2-valent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group, a carboxyl group, or a 2-valent group formed by combining them. Of these, preferred is a single bond or a bond consisting of-Ab 1 -CO 2 -a linker represented. Ab (Ab) 1 The alkylene group is a linear or branched alkylene group or a monocyclic or polycyclic cycloalkylene group, and preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group or a norbornylene group.
V represents a group in which 1 hydrogen atom is extracted from a ring member of a lactone structure represented by any one of formulas (LC 1-1) to (LC 1-21).
The repeating unit having a lactone group may be, for example, a repeating unit represented by the general formula (AII) or (AIII).
[ chemical formula 34]
In the general formulae (AII) and (AIII), RIII each independently represents a hydrogen atom or a substituent.
RIII is preferably a hydrogen atom.
Ahd in the general formula (AII) 1 The group is obtained by extracting 1 hydrogen atom one by one from ring members adjacent to each other in the lactone structure represented by any one of the formulas (LC 1-1) to (LC 1-21).
Ahd in the general formula (AIII) 2 Represents any one of the formulae (LC 1-1) to (LC 1-21)The lactone structure represented by the formula (I) is a group in which 2 hydrogen atoms are extracted from 1 ring member atom.
The repeating unit having a lactone group is exemplified below.
[ chemical formula 35]
[ chemical formula 36]
When an optical isomer exists in the repeating unit having a lactone group, any optical isomer may be used. Further, 1 kind of optical isomer may be used alone, or a plurality of kinds of optical isomers may be used in combination. When 1 optical isomer is mainly used, the optical purity (ee) thereof is preferably 90 or more, more preferably 95 or more.
The number of the lactone-group-containing repeating units may be 1 or 2 or more.
The content of the repeating unit having a lactone group is preferably 1 to 70 mol%, more preferably 3 to 60 mol%, and even more preferably 5 to 50 mol% with respect to all the repeating units in the resin (a).
< recurring units having sultone group or carbonate group >
The resin (a) also preferably contains a repeating unit having a sultone group or a carbonate group.
The repeating unit having a sultone group or a carbonate group is preferably a repeating unit different from the above-mentioned repeating unit.
The sultone group may have a sultone structure. The sultone structure is preferably a 5-to 7-membered ring sultone structure. Of these, lactone structures in which other ring structures are condensed on 5-to 7-membered ring sultone structures in the form of a double ring structure or a helical structure are more preferable.
And, the sultone group may be directly bonded to the main chain. For example, the ring member atoms of the sultone group may constitute the main chain of the resin (a).
The resin (a) preferably has a repeating unit having a sultone group obtained by extracting 1 or more (for example, 1 to 2) hydrogen atoms from a ring member atom of a sultone structure represented by any one of the following formulas (SL 1-1) to (SL 1-3).
[ chemical formula 37]
The above sultone structure may have a substituent (Rb) 2 ). Regarding the substituents (Rb) in the formulae (SL 1-1) to (SL 1-3) 2 ) Can be substituted with the substituent (Rb) in the lactone structures represented by the above formulae (LC 1-1) to (LC 1-21) 2 ) The same description.
Of the ring member atoms of the above sultone structure, those not adjacent to-COO-or-O-, more than 1 (e.g., 1 to 2) of the methyl groups may be substituted with a heteroatom such as-O-or-S-.
Examples of the repeating unit having a sultone group include a repeating unit in which V in the repeating unit represented by the above general formula (AI) is substituted with a group in which 1 hydrogen atom is extracted from a ring member atom of a sultone structure represented by any one of the formulas (SL 1-1) to (SL 1-3), and a repeating unit in which V in the repeating unit represented by the above general formula (ATI) is ahd 1 Repeating units substituted with a group in which 1 hydrogen atom is extracted one by one from ring members adjacent to each other of the sultone structure represented by any one of the formulae (SL 1-1) to (SL 1-3), and ahd among repeating units represented by the above formula (AIII) 2 A repeating unit substituted with a group in which 2 hydrogen atoms are extracted from 1 ring member of the sultone structure represented by any one of formulas (SL 1-1) to (SL 1-3).
The carbonate group is preferably a cyclic carbonate group.
The repeating unit having a cyclic carbonate group is preferably a repeating unit represented by the following formula (A-1).
[ chemical formula 38]
In the formula (A-1), R A 1 Represents a hydrogen atom, a halogen atom or a 1-valent organic group (preferably a methyl group).
n represents an integer of 0 or more.
R A 2 Represents a substituent. When n is 2 or more, there are a plurality of R A 2 The two may be the same or different.
A represents a single bond or a 2-valent linking group. The above-mentioned 2-valent linking group is preferably an alkylene group, a 2-valent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group, a carboxyl group, or a 2-valent group formed by combining them.
Z represents an atomic group forming a single ring or multiple rings together with the group represented by-O-CO-O-in the formula.
The repeating unit having a sultone group or a carbonate group is exemplified below.
[ chemical formula 39]
The content of the repeating unit having a sultone group or a carbonate group is preferably 1 mol% or more, more preferably 10 mol% or more, with respect to all the repeating units in the resin (a). The upper limit is preferably 85 mol% or less, more preferably 80 mol% or less, still more preferably 70 mol% or less, and particularly preferably 60 mol% or less.
< repeating units having fluorine atom or iodine atom >
The resin (a) may contain a repeating unit having a fluorine atom or an iodine atom.
The repeating unit having a fluorine atom or an iodine atom is preferably a repeating unit different from the repeating unit described above.
The repeating unit having a fluorine atom or an iodine atom is preferably a repeating unit represented by the formula (C).
[ chemical formula 40]
L 5 Represents a single bond or an ester group.
R 9 Represents a hydrogen atom or an alkyl group which may have a fluorine atom or an iodine atom.
R 10 Represents a hydrogen atom, an alkyl group which may have a fluorine atom or an iodine atom, a cycloalkyl group which may have a fluorine atom or an iodine atom, an aryl group which may have a fluorine atom or an iodine atom, or a combination thereof.
The repeating unit having a fluorine atom or an iodine atom is exemplified below.
[ chemical formula 41]
The content of the repeating unit having a fluorine atom or an iodine atom is preferably 0 mol% or more, more preferably 5 mol% or more, and still more preferably 10 mol% or more, with respect to all the repeating units in the resin (a). The upper limit is preferably 50 mol% or less, more preferably 45 mol% or less, and still more preferably 40 mol% or less.
< recurring Unit represented by the formula (V-1) or the following formula (V-2) >)
The resin (A) may have a repeating unit represented by the following formula (V-1) or the following formula (V-2).
The repeating unit represented by the following formula (V-1) and the following formula (V-2) is preferably a repeating unit different from the repeating unit described above.
[ chemical formula 42]
In the method, in the process of the invention,
R 6 r is R 7 Each independently represents a hydrogen atom, a hydroxyl group, an alkyl group, an alkoxy group, an acyloxy group, a cyano group, a nitro group, an amino group, a halogen atom, an ester group (-OCOR or-COOR: R is an alkyl group having 1 to 6 carbon atoms or a fluorinated alkyl group) or a carboxyl group. The alkyl group is preferably a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms.
n 3 An integer of 0 to 6.
n 4 And represents an integer of 0 to 4.
X 4 Is methylene, oxygen atom or sulfur atom.
The repeating unit represented by the formula (V-1) or (V-2) is exemplified below.
Examples of the repeating unit represented by the formula (V-1) or (V-2) include repeating units described in paragraph [0100] of Japanese patent application laid-open No. 2018/193954.
The content of the repeating unit represented by the formula (V-1) or the following formula (V-2) is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (A).
< repeating units for reducing the motility of the Main chain >
The resin (a) may have a repeating unit for reducing the mobility of the main chain as a repeating unit different from the repeating unit a 1.
From the viewpoint of being able to suppress excessive diffusion of the generated acid or pattern disintegration upon development, the resin (a) is preferably high in glass transition temperature (Tg). The Tg is preferably greater than 90℃and more preferably greater than 100℃and even more preferably greater than 110℃and particularly preferably greater than 125 ℃. Further, since an excessively high Tg leads to a decrease in dissolution rate in the developer, tg is preferably 400℃or lower, more preferably 350℃or lower.
In the present specification, the glass transition temperature (Tg) of a polymer such as the resin (a) is calculated by the following method. First, tg of a homopolymer consisting only of each repeating unit contained in the polymer was calculated by the Bicerano method, respectively. The calculated Tg is then referred to as "Tg of the repeating unit". Next, the mass ratio (%) of each repeating unit to all repeating units in the polymer was calculated. Next, tg in each mass ratio is calculated using Fox formula (Materials Letters, 62 (2008) 3152, etc.), and the sum of these is set as Tg (°c) of the polymer.
Bicerano method is described in predictions of polymer properties (Prediction of polymer properties), marcel Dekker Inc, new York (1993), etc. The Tg calculation by the Bicerano method can be performed using Polymer physical property estimation software MDL Polymer (MDL Information Systems, inc.).
In order to increase the Tg of the resin (A) (preferably to make the Tg more than 90 ℃), it is preferable to decrease the mobility of the main chain of the resin (A). The method of reducing the mobility of the main chain of the resin (A) includes the following methods (a) to (e).
(a) Introduction of bulky substituents into the main chain
(b) Introducing multiple substituents into the main chain
(c) Introduction of substituents initiating interactions between resins (A) near the main chain
(d) Forming a backbone in a cyclic structure
(e) Linking cyclic structures to the main chain
In addition, the resin (A) preferably has a repeating unit having a Tg of a homopolymer of 130 ℃ or higher.
The type of the repeating unit having a Tg of 130 ℃ or higher in the homopolymer is not particularly limited, as long as the Tg of the homopolymer calculated by the Bicerano method is 130 ℃ or higher. The type of functional group in the repeating unit represented by the following formulas (a) to (E) corresponds to a repeating unit having a Tg of 130 ℃ or higher in the homopolymer.
(repeating units represented by the formula (A))
As an example of a specific implementation means of the above (a), a method of introducing a repeating unit represented by the formula (a) into the resin (a) is given.
[ chemical formula 43]
In the formula (A), R A Representing a structure having multiple ringsA group. R is R x Represents a hydrogen atom, a methyl group or an ethyl group. The group having a polycyclic structure is a group having a plurality of ring structures, which may or may not be condensed.
Specific examples of the repeating unit represented by the formula (A) include repeating units described in paragraphs [0107] to [0119] of Japanese patent application laid-open No. 2018/193954.
The content of the repeating unit represented by the formula (a) is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (a).
(repeating units represented by the formula (B))
As an example of a specific implementation means of the above (B), a method of introducing a repeating unit represented by the formula (B) into the resin (a) is given.
[ chemical formula 44]
In the formula (B), R b1 ～R b4 Each independently represents a hydrogen atom or an organic group, R b1 ～R b4 At least 2 or more of them represent an organic group.
Also, when at least one of the organic groups is a group in which a ring structure is directly connected to the main chain of the repeating unit, the kind of other organic groups is not particularly limited.
In the case where none of the organic groups is a group in which a ring structure is directly linked to the main chain in the repeating unit, at least 2 or more of the organic groups are substituents having 3 or more constituent atoms other than hydrogen atoms.
Specific examples of the repeating unit represented by the formula (B) include repeating units described in paragraphs [0113] to [0115] of Japanese patent application laid-open No. 2018/193954.
The content of the repeating unit represented by the formula (B) is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (a).
(repeating units represented by the formula (C))
As an example of a specific implementation means of the above (C), a method of introducing a repeating unit represented by the formula (C) into the resin (a) is given.
[ chemical formula 45]
In the formula (C), R c1 ～R c4 Each independently represents a hydrogen atom or an organic group, R c1 ～R c4 At least one of (2) is a group having a hydrogen-bonding hydrogen atom within 3 atoms from the main chain carbon. Among them, it is preferable that the resin (a) has hydrogen-bonding hydrogen atoms in an atomic number of 2 or less (closer to the main chain side) in addition to causing interaction between the main chains.
Specific examples of the repeating unit represented by the formula (C) include repeating units described in paragraphs [0119] to [0121] of Japanese patent application laid-open No. 2018/193954.
The content of the repeating unit represented by the formula (C) is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (a).
(repeating units represented by the formula (D))
As an example of a specific implementation means of the above (D), a method of introducing a repeating unit represented by the formula (D) into the resin (a) is given.
[ chemical formula 46]
In the formula (D), "cylic" represents a group having a cyclic structure forming a main chain. The number of ring constituent atoms is not particularly limited.
Specific examples of the repeating unit represented by the formula (D) include repeating units described in paragraphs [0126] to [0127] of Japanese patent application laid-open No. 2018/193954.
The content of the repeating unit represented by the formula (D) is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (a).
(repeating units represented by the formula (E))
As an example of a specific implementation means of the above (E), a method of introducing a repeating unit represented by the formula (E) into the resin (a) is given.
[ chemical formula 47]
In the formula (E), re each independently represents a hydrogen atom or an organic group. Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkenyl group, and the like which may have a substituent.
"cylic" is a cyclic group containing carbon atoms in the backbone. The number of atoms contained in the cyclic group is not particularly limited.
Specific examples of the repeating unit represented by the formula (E) include repeating units described in paragraphs [0131] to [0133] of Japanese patent application laid-open No. 2018/193954.
The content of the repeating unit represented by the formula (E) is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (a).
< repeat Unit having hydroxyl group or cyano group >
The resin (a) may contain a repeating unit having a hydroxyl group or a cyano group. This improves the substrate adhesion and the developer affinity.
The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit different from the above-described repeating unit (particularly a repeating unit having an acid group).
The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group.
The repeating unit having a hydroxyl group or a cyano group preferably has no acid-decomposable group. Examples of the repeating unit having a hydroxyl group or a cyano group include repeating units described in paragraphs [0153] to [0158] of Japanese patent application laid-open No. 2020/004306.
The content of the repeating unit having a hydroxyl group or a cyano group is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (a).
< repeating units having alicyclic hydrocarbon Structure and exhibiting no acid decomposability >
The resin (a) may contain a repeating unit having an alicyclic hydrocarbon structure and exhibiting no acid decomposition property.
The repeating unit having an alicyclic hydrocarbon structure and exhibiting no acid decomposition is preferably a repeating unit different from the repeating unit described above.
This reduces the elution of low molecular components from the resist film into the immersion liquid during immersion exposure. Examples of such a repeating unit include a repeating unit derived from 1-adamantyl (meth) acrylate, diamantanyl (meth) acrylate, tricyclodecane (meth) acrylate, and cyclohexyl (meth) acrylate.
The content of the repeating unit having an alicyclic hydrocarbon structure and exhibiting no acid decomposability is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (a).
< repeating unit having neither hydroxyl group nor cyano group and represented by the formula (III) >
The resin (a) may contain a repeating unit represented by the formula (III) without any of a hydroxyl group and a cyano group.
[ chemical formula 48]
In the formula (III), R 5 Represents a hydrocarbon group having at least one cyclic structure and not having any one of a hydroxyl group and a cyano group.
Ra represents a hydrogen atom, an alkyl group or-CH 2 -O-Ra 2 A base. Wherein Ra is 2 Represents an alkyl group or an acyl group.
R 5 The cyclic structure of the catalyst contains a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a carbon atomCycloalkyl groups having 3 to 12 carbon atoms (more preferably 3 to 7 carbon atoms) or cycloalkenyl groups having 3 to 12 carbon atoms.
Specific examples of the detailed definition and repeating unit of each group in the formula (III) include those described in paragraphs [0169] to [0173] of International publication No. 2020/004306.
The content of the repeating unit represented by the formula (III) which does not have any one of a hydroxyl group and a cyano group is preferably 1 to 65 mol%, more preferably 5 to 45 mol, with respect to all the repeating units in the resin (a).
< other repeating units >
The resin (a) may have a repeating unit other than the repeating unit.
For example, the resin (a) may have a repeating unit selected from a repeating unit having a thioxane (Oxathiane) ring group, a repeating unit having a hydroxy-morpholine-coumarin (Oxazorone) ring group, a repeating unit having a dioxane ring group, a repeating unit having a Hydantoin (Hydantoin) ring group, and a repeating unit having a sulfolane ring group.
The content of the other repeating unit is preferably 1 to 65 mol%, more preferably 5 to 45 mol%, with respect to all the repeating units in the resin (a).
Such a repeating unit is exemplified below.
[ chemical formula 49]
In addition to the above-described repeating structural units, the resin (a) may have various repeating structural units for the purpose of adjusting dry etching resistance, standard developer adaptability, substrate adhesion, resist profile, resolution, heat resistance, sensitivity, and the like.
The resin (a) can be synthesized according to a conventional method (e.g., radical polymerization).
The weight average molecular weight of the resin (a) is preferably 1,000 ～ 200,000, more preferably 3,000 to 20,000, and even more preferably 5,000 to 15,000, as a polystyrene equivalent based on GPC. When the weight average molecular weight of the resin (a) is within the above range, deterioration of heat resistance and dry etching resistance can be further suppressed. Further, deterioration of film forming property due to deterioration of developing property and increase of viscosity can be suppressed.
The dispersity (molecular weight distribution) of the resin (a) is usually 1.0 to 5.0, preferably 1.0 to 3.0, more preferably 1.2 to 3.0, and still more preferably 1.2 to 2.0. The smaller the dispersity, the more excellent the resolution and resist shape, and the smoother the sidewall of the resist pattern, the more excellent the roughness.
The resin (A) may be used alone or in combination of 1 kind or 2 or more kinds.
In the resist composition, the content of the resin (a) is preferably 10 to 99.9% by mass, more preferably 40 to 99.5% by mass, and even more preferably 65 to 99% by mass, relative to the total solid content of the composition.
The molar amount of the repeating unit (a) in the resist composition is preferably 0.05 to 5.00mmol/g, more preferably 0.15 to 4.00mmol/g, still more preferably 0.50 to 2.50mmol/g, and particularly preferably 0.70 to 1.50mmol/g, relative to the total solid content of the resist composition.
The molar amount of the repeating unit (a) can be appropriately adjusted by appropriately setting the content of the resin (a) with respect to the total solid content of the resist composition and the content of all the repeating units of the resin (a).
The solid component is a component forming a resist film, and does not include a solvent. Further, as long as the resist film is formed, the resist film is considered to be a solid even if the resist film is in a liquid state.
When the resist composition does not contain a photoacid generator, the molar amount of the repeating unit (a) is 0.50mmol/g or more, preferably 0.70mmol/g or more, more preferably 1.00mmol/g or more, relative to the total solid content of the resist composition. The upper limit of the molar amount is, for example, 5.00mmol/g or less, preferably 3.00mmol/g or less, and more preferably 2.50mmol/g or less.
When the resist composition contains a photoacid generator, the total molar amount of the repeating unit (a) and the photoacid generator is 0.50mmol/g or more, preferably 0.70mmol/g or more, more preferably 1.00mmol/g or more, relative to the total solid content of the resist composition. The upper limit of the total molar amount is, for example, 5.00mmol/g or less, preferably 3.00mmol/g or less, and more preferably 2.50mmol/g or less.
In the resist composition, the molar amount of the repeating unit (a) is preferably 5 to 100 mol%, more preferably 15 to 99 mol%, and even more preferably 25 to 90 mol% based on the total molar amount of the repeating unit (a) and the photoacid generator.
The photoacid generator will be described later.
[ photoacid generator (Compound that generates acid upon irradiation with actinic rays or radiation) ]
The resist composition of the present invention may contain, as a component different from the above-mentioned component, a photoacid generator (a compound that generates an acid upon irradiation with actinic rays or radiation).
Photoacid generators are components that generate acid upon irradiation with actinic rays or radiation.
The acid generated by the compound that generates an acid upon irradiation with actinic rays or radiation is generated separately from the acid generated by the repeating unit (a) in the resin (a).
In addition, a repeating unit other than the repeating unit (a) in the resin (which may be the resin (a)) contained in the resist composition, which generates an acid by irradiation with actinic rays or radiation, may also be used as the photoacid generator.
The photoacid generator is preferably a low molecular compound, and the resist composition preferably contains a photoacid generator that is a low molecular compound.
The molecular weight of the photoacid generator, which is a low molecular compound, is preferably 3000 or less, more preferably 2000 or less, and even more preferably 1000 or less. The lower limit of the molecular weight is, for example, 100 or more.
The content of the photoacid generator which is a low molecular compound is preferably 10 to 100% by mass, more preferably 60 to 100% by mass, and even more preferably 90 to 100% by mass, relative to the total amount of the photoacid generator.
As described later, a part or all of the photoacid generator (preferably, a photoacid generator which is a low molecular compound) may be a photodegradable alkali compound described later.
The photoacid generator is not particularly limited, and is preferably a compound that generates an organic acid by irradiation with actinic rays or radiation (preferably electron beam or extreme ultraviolet rays).
The organic acid is preferably at least one of sulfonic acid, bis (alkylsulfonyl) imide and tris (alkylsulfonyl) methide.
The photoacid generator may be an ionic compound or a nonionic compound, and is preferably an ionic compound.
The photoacid generator as the ionic compound may be either a photoacid generator as an onium salt or a photoacid generator as an intramolecular salt (betaine compound).
(photoacid generator as onium salt)
Photoacid generators as onium salts generally have a cationic site and an anionic site.
Examples of the photoacid generator of the onium salt include the photoacid generator described as "M p+ m X q- n "a compound represented by.
In "M p+ m X q- n In "p, q, m and n each independently represent an integer of 1 or more (preferably an integer of 1 to 8).
M p+ Representing an organic cation having a charge of p-valence. The organic cation may contain a cationic site as part of it or may be the cationic site itself. The organic cation is preferably the cation site itself.
X q- Represents an organic anion having a charge of q-valence. The organic anion may contain an anionic site as part of the anion, or the anion site itself. The organic anion preferably comprises an anionic site as part.
M when there are a plurality of p+ X is X q- May be the same or different.
There may be a plurality of M p+ Average of p inThe value obtained by multiplying the value by m and X where a plurality of X's may exist q- The average value of q in (c) is multiplied by n to obtain the same value.
Among them, p is preferably 1.
For example, p, q, m and n are preferably all 1.
Preferably, p is 1, q is 2 to 8, m is the same value as q, and n is 1.
Organic cation
As the organic cation, the organic cation described in the description of the repeating unit (a) can be used similarly.
Organic anions
Examples of the organic anions include phenolic hydroxyl anions, sulfonic acid anions (aliphatic sulfonic acid anions, aromatic sulfonic acid anions, camphorsulfonic acid anions, and the like), carboxylic acid anions (aliphatic carboxylic acid anions, aromatic carboxylic acid anions, aralkylcarboxylic acid anions, formic acid anions, bicarbonate anions, and the like), carbonylsulfonylimide anions, bis (sulfonyl) imide anions (bis (alkylsulfonyl) imide anions, and the like), bis (carbonyl) imide anions, and tris (alkylsulfonyl) methide anions.
The aliphatic moiety in the aliphatic sulfonic acid anion and the aliphatic carboxylic acid anion may be an alkyl group or a cycloalkyl group, and is preferably a linear or branched alkyl group having 1 to 30 carbon atoms or a cycloalkyl group having 3 to 30 carbon atoms.
The alkyl group may be, for example, a fluoroalkyl group (which may or may not have a substituent other than a fluorine atom).
The cycloalkyl group may be a single ring or multiple rings, and may be-CH forming a ring structure 2 More than 1 (preferably 1 to 2) of them may be substituted with hetero atoms (-O-or-S-etc.), -SO 2 -、-SO 3 -, ester groups or carbonyl groups.
The aryl group in the aromatic sulfonic acid anion and the aromatic carboxylic acid anion is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include phenyl group, tolyl group and naphthyl group.
The alkyl group, cycloalkyl group and aryl group mentioned above may have a substituent. The substituent is not particularly limited, and specifically includes a halogen atom such as a nitro group, a fluorine atom or a chlorine atom, a carboxyl group, a hydroxyl group, an amino group, a cyano group, an alkoxy group (preferably having 1 to 15 carbon atoms), an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 15 carbon atoms), an aryl group (preferably having 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably having 2 to 7 carbon atoms), an acyl group (preferably having 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably having 2 to 7 carbon atoms), an alkylthio group (preferably having 1 to 15 carbon atoms), an alkylsulfonyl group (preferably having 1 to 15 carbon atoms), an alkylsulfinyl group (preferably having 1 to 15 carbon atoms), an aryloxysulfonyl group (preferably having 6 to 20 carbon atoms), and the like.
The aralkyl group in the aralkyl carboxylic acid anion is preferably an aralkyl group having 7 to 14 carbon atoms, and examples thereof include benzyl, phenethyl, naphthylmethyl, naphthylethyl and naphthylbutyl.
Examples of the sulfonyl imide anion include saccharin anions.
The alkyl group in the bis (alkylsulfonyl) imide anion and the tris (alkylsulfonyl) methide anion is preferably an alkyl group having 1 to 5 carbon atoms. Examples of the substituent for the alkyl group include a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, an alkylthio group, an alkoxysulfonyl group, an aryloxysulfonyl group and a cycloalkylaryloxysulfonyl group, and a fluorine atom or an alkyl group substituted with a fluorine atom is preferable.
Also, the alkyl groups in the bis (alkylsulfonyl) imide anions may be bonded to each other to form a ring structure.
The organic anion is also preferably an aliphatic sulfonic acid anion in which at least the α -position of the sulfonic acid is substituted with a fluorine atom (an aliphatic sulfonic acid anion in which the α -position is substituted with 1 or 2 fluorine atoms, or the like), an aliphatic sulfonic acid anion in which the α -position of the sulfonic acid is not substituted with a fluorine atom (an aliphatic sulfonic acid anion in which the α -position is unsubstituted with a fluorine atom and the β -position is substituted with 0 to 3 fluorine atoms or a perfluoroalkyl group, or the like), an aromatic sulfonic acid anion in which the fluorine atom or a group having a fluorine atom is substituted, a bis (alkylsulfonyl) imide anion in which the alkyl group is substituted with a fluorine atom, or a tris (alkylsulfonyl) methide anion in which the alkyl group is substituted with a fluorine atom.
The organic anion is also preferably AN anion represented by the following formula (AN).
[ chemical formula 50]
In the formula (AN), o represents AN integer of 0 to 5. p represents an integer of 0 to 10. q represents an integer of 0 to 10.
In the formula (AN), AX represents-SO 3 - or-COO - 。
In the formula (AN), xf represents a fluorine atom or AN alkyl group substituted with at least one fluorine atom. The number of carbon atoms of the alkyl group is preferably 1 to 10, more preferably 1 to 4. Further, as the alkyl group substituted with at least one fluorine atom, a perfluoroalkyl group is preferable.
Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, more preferably a fluorine atom or CF 3 . In particular, it is more preferable that both Xf are fluorine atoms.
In the formula (AN), R 4 R is R 5 Each independently represents a hydrogen atom, a fluorine atom, an alkyl group or an alkyl group substituted with at least one fluorine atom. When there are a plurality of R 4 R is R 5 When R is 4 R is R 5 May be the same or different.
From R 4 R is R 5 The alkyl group may have a substituent other than fluorine atom, and preferably has 1 to 4 carbon atoms.
Specific examples and preferred modes of the alkyl group substituted with at least one fluorine atom are the same as those of Xf.
R 4 R is R 5 Preferably a hydrogen atom.
And, R bonded to the same carbon atom is also preferable 4 R is R 5 An alkyl group substituted with a hydrogen atom and the other with a fluorine atom or at least one fluorine atom. Wherein, -C (R 4 )(R 5 ) -also preferablyR being bound to the same carbon atom 4 R is R 5 An alkyl group substituted with a hydrogen atom and the other with a fluorine atom or at least one fluorine atom. And, -C (R 4 )(R 5 ) -wherein R 4 R is R 5 It is also preferable that each is independently a hydrogen atom or an alkyl group (which may have a substituent other than a fluorine atom).
In the formula (AN), L represents a 2-valent linking group. When a plurality of L's exist, L's may be the same or different.
As the 2-valent linking group, for example, examples include-O-CO-O-; -COO-, -OCO-, -CONH-, and-NHCO-, -CO-, -O-, -S-, -SO 2 And a 2-valent linking group comprising an alkylene group (preferably having 1 to 6 carbon atoms), a cycloalkylene group (preferably having 3 to 15 carbon atoms), an alkenylene group (preferably having 2 to 6 carbon atoms), and a combination of these groups. Wherein, the liquid crystal display device comprises a liquid crystal display device, preferably-O-CO-O-; -COO-, -OCO-, -CONH-, -NHCO-, -CO-, -O-, -SO 2 -, -O-CO-O-alkylene-, -alkylene-O-CO-O-, -COO-alkylene-, -OCO-alkylene-, -CONH-alkylene-or-NHCO-alkylene-, more preferably-O-CO-O-; -O-CO-O-alkylene- -alkylene-O-CO-O-, -COO-, -OCO-, -CONH-, -SO 2 -, -COO-alkylene-or-OCO-alkylene-.
In the formula (AN), W represents AN organic group including a cyclic structure. Among them, a cyclic organic group is preferable.
Examples of the cyclic organic group include alicyclic groups, aryl groups, and heterocyclic groups.
The alicyclic group may be a single ring or multiple rings. Examples of the monocyclic alicyclic group include monocyclic cycloalkyl groups such as cyclopentyl, cyclohexyl, and cyclooctyl. Examples of the polycyclic alicyclic group include polycyclic cycloalkyl groups such as norbornyl, tricyclodecyl, tetracyclodecyl, tetracyclododecyl, and adamantyl. Among them, preferred is an alicyclic group having a bulky structure having 7 or more carbon atoms, such as a norbornyl group, a tricyclodecyl group, a tetracyclodecyl group, a tetracyclododecyl group and an adamantyl group.
Aryl groups may be monocyclic or polycyclic. Examples of the aryl group include phenyl, naphthyl, phenanthryl and anthracyl.
The heterocyclic group may be a single ring or multiple rings. The heterocyclic group may or may not have aromatic properties. Examples of the heterocyclic ring having an aromatic property include a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, and a pyridine ring. Examples of the heterocyclic ring having no aromatic property include a tetrahydropyran ring, a lactone ring, a sultone ring, and a decahydroisoquinoline ring. The heterocyclic ring in the heterocyclic group is particularly preferably a furan ring, a thiophene ring, a pyridine ring or a decahydroisoquinoline ring.
The cyclic organic group may have a substituent. Examples of the substituent include an alkyl group (which may be any of a straight chain and a branched chain, and preferably has 1 to 12 carbon atoms), a cycloalkyl group (which may be any of a monocyclic ring, a polycyclic ring, and a spiro ring, and preferably has 3 to 20 carbon atoms), an aryl group (which may be any of a 6 to 14 carbon atoms), a hydroxyl group, an alkoxy group, an ester group, an amide group, a urethane group, an urea group, a thioether group, a sulfonamide group, and a sulfonate group. In addition, the carbon constituting the cyclic organic group (carbon contributing to the formation of a ring) may be a carbonyl carbon.
As the anion represented by the formula (AN), AX-CF is preferable 2 -CH 2 -OCO-(L)q’-W、AX-CF 2 -CHF-CH 2 -OCO-(L)q’-W、AX-CF 2 -COO-(L)q’-W、AX-CF 2 -CF 2 -CH 2 -CH 2 - (L) q-W or AX-CF 2 -CH(CF 3 ) -OCO- (L) q' -W. Here, AX, L, q, and W are the same as in formula (AN). q' represents an integer of 0 to 10.
The anions represented by any of the general formulae (d 1-1) to (d 1-3) are also preferable.
[ chemical formula 51]
In the formula (d 1-1), R 51 The representation may haveHydrocarbyl groups of substituents (e.g., hydroxy groups and/or fluorine atoms). Examples of the hydrocarbon group include an alkyl group (which may be linear or branched, preferably having 6 to 15 carbon atoms) and an aryl group (which may be monocyclic or polycyclic, preferably having 6 to 15 carbon atoms).
In the formula (d 1-2), Z 2c Represents a hydrocarbon group having 1 to 30 carbon atoms which may have a substituent. Wherein, in the above hydrocarbon group, relative to-SO 3 - The sulfur atoms alpha and/or beta carbon in (a) are preferably not bonded to fluorine atoms.
Z 2c The hydrocarbon group in (a) may be linear or branched, and may have a cyclic structure. The carbon atom in the hydrocarbon group (preferably, the carbon atom forming a cyclic structure when the hydrocarbon group has a cyclic structure) may be a carbonyl carbon (-CO-). Examples of the hydrocarbon group include a group having a norbornyl group which may have a substituent. The carbon atoms forming the above-mentioned norbornyl groups may be substituted with carbonyl carbons.
Z 2c The above hydrocarbon group in (2) is also preferably an aryl group. The aryl group may be a single ring or multiple rings, and the number of carbon atoms is preferably 6 to 15. The above aryl group is also preferably a group having a nitrogen atom as a substituent.
And "Z" in the general formula (d 1-2) 2c -SO 3 - "preferably different from the anion represented by the above general formula (AN)".
In the formula (d 1-3), R 52 Represents an organic group. The organic group is preferably an alkyl group, more preferably an alkyl group having 1 to 10 carbon atoms. The alkyl group may be linear or branched, and may have a cyclic structure. The substituent that the alkyl group may have is preferably a fluorine atom. The alkyl group may be a perfluoroalkyl group.
Y 3 Represents a single bond, -CO-, alkylene or arylene. The alkylene group may be linear or branched, and may have a cyclic structure. The number of carbon atoms of the alkylene group is preferably 1 to 7. The number of carbon atoms of the arylene group is preferably 6 to 15.
Rf represents a hydrocarbon group. The number of carbon atoms of the hydrocarbon group is preferably 1 to 30. The compound may be linear or branched, and may have a cyclic structure. The carbon atom in the hydrocarbon group (preferably, the carbon atom forming a cyclic structure when the hydrocarbon group has a cyclic structure) may be a carbonyl carbon (-CO-). Examples of the hydrocarbon group include a group having a norbornyl group which may have a substituent. The carbon atoms forming the above-mentioned norbornyl group may be carbonyl carbon. The hydrocarbon group is preferably an alkyl group such as a methyl group.
Examples of the substituent that the hydrocarbon group may have include a fluorine atom.
In addition, a part other than an organic cation in the compounds represented by any of the following formulas (Ia-1) to (Ia-5) and the compounds represented by any of the formulas (IIa-1) and (IIa-2) may be used as an organic anion.
Compounds (I) and (II)
The photoacid generator as the onium salt may be 1 or more selected from the compounds (I) and (II) described below.
The compounds (I) and (II) are also compounds (photoacid generators) that generate acid by irradiation with actinic rays or radiation.
Compound (I)
The compound (I) is a compound having 1 or more of the following structural sites X and 1 or more of the following structural sites Y, and is a compound which generates an acid containing the following 1 st acid site derived from the following structural site X and the following 2 nd acid site derived from the following structural site Y by irradiation with actinic rays or radiation.
Structural part X: from anionic site A 1 - Cation site M 1 + Composition, and formed by irradiation of actinic rays or radiation 1 The structural part of the 1 st acid part
Structural part Y: from anionic site A 2 - Cation site M 2 + Composition, and formed by irradiation of actinic rays or radiation 2 The 2 nd acid site of the expression
Wherein the compound (I) satisfies the following condition I.
Condition I: in the above compound (I), H is used + Substitution of the cationic site M in the structural site X 1 + And the cationic site M in the structural site Y 2 + The resulting compound PI has: acid dissociation constant a1, derived from the acid using H + Substitution of the cationic site M in the structural site X 1 + Made of HA 1 An acidic moiety represented; and an acid dissociation constant a2 derived from H + Substitution of the cationic site M in the structural site Y 2 + Made of HA 2 The acid site represented, and the acid dissociation constant a2 is larger than the acid dissociation constant a1.
Condition I will be described more specifically below.
When the compound (I) is, for example, a compound which generates an acid having 1 acid site 1 derived from the structural site X and 1 acid site 2 derived from the structural site Y, the compound PI corresponds to "having HA 1 And HA (alpha) 2 Is a compound of formula (I).
In the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI, the compound PI becomes "having a" when the acid dissociation constant of the compound PI is determined 1 - HA (HA) 2 The pKa of the compound "of (2) is the acid dissociation constant a1, and the above-mentioned" has A 1 - HA (HA) 2 The compounds "become" having A 1 - A is a 2 - The pKa at which the compound of (a) is present is the acid dissociation constant a2.
In addition, when the compound (I) is a compound that generates an acid having 2 acid sites 1 derived from the structural site X and 1 acid site 2 derived from the structural site Y, for example, the compound PI corresponds to "having 2 HA' s 1 And 1 HA 2 Is a compound of formula (I).
When the acid dissociation constant of this compound PI was determined, the compound PI became "having 1 a 1 - 1 HA 1 1 HA 2 Acidolysis at the time of "Compound (C)")Dissociation constant and "having 1A 1 - 1 HA 1 1 HA 2 The compounds "become" having 2A 1 - 1 HA 2 The acid dissociation constant at the time of the compound "corresponds to the acid dissociation constant a1 described above. And, "have 2A 1 - And 1 HA 2 The compounds "become" having 2A 1 - And A 2 - The acid dissociation constant at the time of the compound "corresponds to the acid dissociation constant a2. That is, as in this compound PI, there are a plurality of sources derived from H + Substitution of the cationic site M in the structural site X 1 + Made of HA 1 The acid dissociation constant a2 is a value larger than the maximum value among the plurality of acid dissociation constants a1. In addition, the compound PI was "having 1A 1 - 1 HA 1 1 HA 2 The acid dissociation constant at the time of "Compound (A)" was aa, and "having 1A 1 - 1 HA 1 1 HA 2 The compounds "become" having 2A 1 - 1 HA 2 When the acid dissociation constant of the compound "is ab, aa and ab satisfy aa < ab.
The acid dissociation constant a1 and the acid dissociation constant a2 are obtained by the above-described method for measuring the acid dissociation constant.
When the compound (I) is irradiated with actinic rays or radiation, the above-mentioned compound PI corresponds to the acid produced.
When the compound (I) has 2 or more structural sites X, the structural sites X may be the same or different. And 2 or more of the above A 1 - More than 2M 1 + The two may be the same or different.
In the compound (I), A is as defined above 1 - A is as described above 2 - And M is as described above 1 + M as described above 2 + Each of which may be the same or different, but A is the same as or different from 1 - A is as described above 2 - Preferably each is different.
In view of further reducing LWR of the formed pattern, in the compound PI, the difference between the acid dissociation constant a1 (the maximum value thereof when a plurality of acid dissociation constants a1 exist) and the acid dissociation constant a2 is preferably 0.1 or more, more preferably 0.5 or more, and even more preferably 1.0 or more. The upper limit of the difference between the acid dissociation constant a1 (the maximum value when a plurality of acid dissociation constants a1 are present) and the acid dissociation constant a2 is not particularly limited, and is, for example, 16 or less.
In the compound PI, the acid dissociation constant a2 is, for example, 20 or less, preferably 15 or less, from the viewpoint of further reducing LWR of the formed pattern. The lower limit of the acid dissociation constant a2 is preferably-4.0 or more.
Further, from the viewpoint of further reducing LWR of the formed pattern, the acid dissociation constant a1 in the compound PI is preferably 2.0 or less, and more preferably 0 or less. The lower limit of the acid dissociation constant a1 is preferably-20.0 or more.
Anionic site A 1 - Anion site A 2 - Examples of the structural moiety containing a negatively charged atom or group include structural moieties selected from the following formulae (AA-1) to (AA-3) and formulae (BB-1) to (BB-6). As anionic site A 1 - The acid moiety having a small acid dissociation constant is preferably formed, and any of the formulae (AA-1) to (AA-3) is preferable. And, as an anionic site A 2 - Preferably, the anion site A is capable of forming an acid dissociation constant ratio 1 - The large acidic site is preferably selected from any of the formulas (BB-1) to (BB-6). In the following formulae (AA-1) to (AA-3) and formulae (BB-1) to (BB-6), the bonding position is represented.
In the formula (AA-2), R A An organic group having a valence of 1. As represented by R A Examples of the organic group having a valence of 1 include a cyano group, a trifluoromethyl group, and a methanesulfonyl group.
[ chemical formula 52]
And, cationic site M 1 + Cation site M 2 + The structural moiety includes a positively charged atom or group of atoms, and examples thereof include an organic cation having a charge of 1. The organic cation is not particularly limited, and examples thereof include an organic cation represented by formula (ZaI) (cation (ZaI)) and an organic cation represented by formula (ZaII) (cation (ZaII)).
The specific structure of the compound (I) is not particularly limited, and examples thereof include compounds represented by the following formulas (Ia-1) to (Ia-5).
First, the compound represented by formula (Ia-1) will be described. The compound represented by the formula (Ia-1) is as follows.
M 11 + A 11 - -L 1 -A 12 - M 12 + (Ia-1)
The compound (Ia-1) is produced by irradiation of actinic rays or radiation 11 -L 1 -A 12 And H.
In the formula (Ia-1), M 11 + M and M 12 + Each independently represents an organic cation.
A 11 - A is a 12 - Each independently represents a 1-valent anionic functional group.
L 1 Represents a 2-valent linking group.
M 11 + M and M 12 + The two may be the same or different.
A 11 - A is a 12 - The respective may be the same or different, but are preferably different from each other.
Wherein in the above formula (Ia-1), H is used + Substituted by M 11 + M and M 12 + The compound PIa (HA) of the organic cation 11 -L 1 -A 12 H)Is derived from A 12 The acid dissociation constant a2 of the acid site represented by H is larger than that derived from HA 11 The acid dissociation constant a1 of the acid site is shown. In addition, preferable values of the acid dissociation constant a1 and the acid dissociation constant a2 are as described above. The compound PIa is the same as an acid generated from the compound represented by the formula (Ia-1) by irradiation with actinic rays or radiation.
And M is 11 + 、M 12 + 、A 11 - 、A 12 - L and L 1 At least one of them may have an acid-decomposable group as a substituent.
In the formula (Ia-1), M is 1 + M and M 2 + The organic cation represented by formula (ZaI) is preferably an organic cation represented by formula (ZaI) or an organic cation represented by formula (ZaII).
From A 11 - The 1-valent anionic functional group represented by the formula (I) means a compound comprising the above-mentioned anionic site A 1 - Is a 1-valent group. And, from A 12 - The 1-valent anionic functional group represented by the formula (I) means a compound comprising the above-mentioned anionic site A 2 - Is a 1-valent group.
As a result of A 11 - A is a 12 - The 1-valent anionic functional group represented by the formula (AA-1) to (AA-3) is preferably a 1-valent anionic functional group containing an anionic moiety of any one of the formulas (BB-1) to (BB-6), and more preferably a 1-valent anionic functional group selected from the formulas (AX-1) to (AX-3) and the formulas (BX-1) to (BX-7). As a result of A 11 - Among them, the 1-valent anionic functional group represented by any one of the formulas (AX-1) to (AX-3) is preferable. And, as a result of A 12 - Among them, the 1-valent anionic functional group represented by any one of the formulas (BX-1) to (BX-7) is preferable, and the 1-valent anionic functional group represented by any one of the formulas (BX-1) to (BX-6) is more preferable.
[ chemical formula 53]
In the formulae (AX-1) to (AX-3), R A1 R is R A2 Each independently represents a 1-valent organic group. * Indicating the bonding location.
As represented by R A1 Examples of the organic group having a valence of 1 include a cyano group, a trifluoromethyl group, and a methanesulfonyl group.
As represented by R A2 The organic group having a valence of 1 is preferably a linear, branched or cyclic alkyl group or an aryl group.
The number of carbon atoms of the alkyl group is preferably 1 to 15, more preferably 1 to 10, and still more preferably 1 to 6.
The above alkyl group may have a substituent. The substituent is preferably a fluorine atom or a cyano group, and more preferably a fluorine atom. When the above alkyl group has a fluorine atom as a substituent, it may be a perfluoroalkyl group.
The aryl group is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group.
The aryl group may have a substituent. The substituent is preferably a fluorine atom, an iodine atom, a perfluoroalkyl group (for example, preferably a carbon number of 1 to 10, more preferably a carbon number of 1 to 6) or a cyano group, and more preferably a fluorine atom, an iodine atom or a perfluoroalkyl group.
In the formulae (BX-1) to (BX-4) and (BX-6), R B An organic group having a valence of 1. * Indicating the bonding location.
As represented by R B The organic group having a valence of 1 is preferably a linear, branched or cyclic alkyl group or an aryl group.
The number of carbon atoms of the alkyl group is preferably 1 to 15, more preferably 1 to 10, and still more preferably 1 to 6.
The above alkyl group may have a substituent. The substituent is not particularly limited, but is preferably a fluorine atom or a cyano group, and more preferably a fluorine atom. When the above alkyl group has a fluorine atom as a substituent, it may be a perfluoroalkyl group.
In addition, the carbon atom which becomes the bonding position in the alkyl group (for example, in the case of the formulae (BX-1) and (BX-4), corresponds to the carbon atom which is directly bonded to-CO-indicated in the formulae in the alkyl group, and in the case of the formulae (BX-2) and (BX-3), corresponds to-SO-indicated in the formulae in the alkyl group 2 The directly bonded carbon atom corresponds to the carbon atom directly bonded to N indicated in the formula in the alkyl group in the case of formula (BX-6). ) In the case of having a substituent, a substituent other than a fluorine atom or a cyano group is also preferable.
In the alkyl group, a carbon atom may be substituted with a carbonyl carbon.
The aryl group is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group.
The aryl group may have a substituent. The substituent is preferably a fluorine atom, an iodine atom, a perfluoroalkyl group (for example, preferably having 1 to 10 carbon atoms, more preferably having 1 to 6 carbon atoms), a cyano group, an alkyl group (for example, preferably having 1 to 10 carbon atoms, more preferably having 1 to 6 carbon atoms), an alkoxy group (for example, preferably having 1 to 10 carbon atoms, more preferably having 1 to 6 carbon atoms), or an alkoxycarbonyl group (for example, preferably having 2 to 10 carbon atoms, more preferably having 2 to 6 carbon atoms), more preferably a fluorine atom, an iodine atom, a perfluoroalkyl group, an alkyl group, an alkoxy group, or an alkoxycarbonyl group.
In the formula (Ia-1), L is 1 The represented 2-valent linking group is not particularly limited, can be exemplified by-CO-; -NR-, -CO-, -0-, -S-, -SO 2 Alkylene (preferably 1 to 6 carbon atoms, which may be straight-chain or branched), cycloalkylene (preferably 3 to 15 carbon atoms), alkenylene (preferably 2 to 6 carbon atoms), a 2-valent aliphatic heterocyclic group (preferably a 5 to 10-membered ring having at least one N, O, S or Se atom in the ring structure, more preferably a 5 to 7-membered ring, further preferably a 5 to 6-membered ring), a 2-valent aromatic heterocyclic group (preferably a 5 to 10-membered ring having at least one N, O, S or Se atom in the ring structure, more preferably a 5 to 7-membered ring, further preferably a 5 to 6-membered ring), a 2-valent aromatic hydrocarbon ring (preferably a 6 to 10-membered ring, further preferably a 5 to 6-membered ring.)One step is preferably a 6 membered ring. ) And a 2-valent linking group formed by combining a plurality of them. The R may be a hydrogen atom or a 1-valent organic group. The 1-valent organic group is not particularly limited, and is preferably an alkyl group (preferably having 1 to 6 carbon atoms).
The alkylene group, the cycloalkylene group, the alkenylene group, the aliphatic heterocyclic group having 2 valences, the aromatic heterocyclic group having 2 valences, and the aromatic hydrocarbon ring group having 2 valences may have a substituent. Examples of the substituent include a halogen atom (preferably a fluorine atom).
As represented by L 1 Among these, a 2-valent linking group represented by the formula (L1) is preferable.
[ chemical formula 54]
In the formula (L1), L 111 Represents a single bond or a 2-valent linking group.
As represented by L 111 The represented 2-valent linking group is not particularly limited, examples include-CO-, -NH-; -O-, -SO 2 An alkylene group which may have a substituent (preferably, any one of a straight chain and a branched chain) having 1 to 6 carbon atoms, a cycloalkylene group which may have a substituent (preferably, 3 to 15 carbon atoms), an aryl group which may have a substituent (preferably, 6 to 10 carbon atoms), and a 2-valent linking group obtained by combining a plurality of these groups. The substituent is not particularly limited, and examples thereof include a halogen atom and the like.
p represents an integer of 0 to 3, preferably an integer of 1 to 3.
v represents an integer of 0 or 1.
Xf 1 Each independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom. The number of carbon atoms of the alkyl group is preferably 1 to 10, more preferably 1 to 4. Further, as the alkyl group substituted with at least one fluorine atom, a perfluoroalkyl group is preferable.
Xf 2 Each independently represents a hydrogen atom and may have a substituentAn alkyl group having a fluorine atom or a fluorine atom. The number of carbon atoms of the alkyl group is preferably 1 to 10, more preferably 1 to 4. As Xf 2 Among them, preferred is an alkyl group substituted with at least 1 fluorine atom, and more preferred is a fluorine atom or a perfluoroalkyl group.
Wherein as Xf 1 Xf 2 Preferably each independently represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, more preferably a fluorine atom or CF 3 . In particular, xf is further preferable 1 Xf 2 Are all fluorine atoms.
* Indicating the bonding location.
When L in formula (Ia-1) 11 When the 2-valent linking group represented by the formula (L1) is represented by the formula (L1), L in the formula (L1) 111 The pendant linkage is preferably linked to A in formula (Ia-1) 12 - And (5) bonding.
Next, the following describes the formulas (Ia-2) to (Ia-4).
[ chemical formula 55]
In the formula (Ia-2), A 21a - A is a 21b - Each independently represents a 1-valent anionic functional group. Here, by A 21a - A is a 21b - The 1-valent anionic functional group represented by the formula (I) means a compound comprising the above-mentioned anionic site A 1 - Is a 1-valent group. As a result of A 21a - A is a 21b - The 1-valent anionic functional group represented by the formula (AX-1) is not particularly limited, and examples thereof include 1-valent anionic functional groups selected from the formulae (AX-1) to (AX-3).
A 22 - Represents a 2-valent anionic functional group. Here, by A 22 - The anionic functional group having a valence of 2 represented by the formula (I) means a compound comprising the above-mentioned anionic site A 2 - Is a 2-valent group. As a result of A 22 - Examples of the anionic functional group having a valence of 2 include 2 represented by the following formulas (BX-8) to (BX-11) A valence anionic functional group, and the like.
[ chemical formula 56]
M 21a + 、M 21b + M and M 22 + Each independently represents an organic cation. As represented by M 21a + 、M 21b + M and M 22 + Organic cations represented by the formula M 1 + The meaning is the same, and the preferred mode is the same.
L 21 L and L 22 Each independently represents a 2-valent organic group.
In the formula (Ia-2), H is used + Substituted by M 21a + 、M 21b + M and M 22 + In the compound PIa-2 obtained by organic cation represented by A, the compound is derived from 22 The acid dissociation constant a2 of the acid site represented by H is larger than that derived from A 21a H acid dissociation constant a1-1 and derived from A 21b Acid dissociation constant a1-2 of the acid site represented by H. In addition, the acid dissociation constants a1-1 and a1-2 correspond to the acid dissociation constant a1 described above.
In addition, A 21a - A is a 21b - May be the same as or different from each other. And M is 21a + 、M 21b + M and M 22 + May be the same as or different from each other.
And M is 21a + 、M 21b + 、M 22 + 、A 21a - 、A 21b - 、L 21 L and L 22 At least one of them may have an acid-decomposable group as a substituent.
In the formula (Ia-3), A 31a - A is a 32 - Each independently represents a 1-valent anionic functional group. In addition, from A 31a - Definition of the represented 1-valent anionic functional groupSense and A in the above formula (Ia-2) 21a - A is a 21b - The meaning is the same, and the preferred mode is the same.
From A 32 - The 1-valent anionic functional group represented by the formula (I) means a compound comprising the above-mentioned anionic site A 2 - Is a 1-valent group. As a result of A 32 - The 1-valent anionic functional group represented by the formula (BX-1) to (BX-7) is not particularly limited, and examples thereof include 1-valent anionic functional groups selected from the above formulae (BX-1) to (BX-7).
A 31b - Represents a 2-valent anionic functional group. Here, by A 31b - The anionic functional group having a valence of 2 represented by the formula (I) means a compound comprising the above-mentioned anionic site A 1 - Is a 2-valent group. As a result of A 31b - Examples of the 2-valent anionic functional group include a 2-valent anionic functional group represented by the following formula (AX-4).
[ chemical formula 57]
M 31a + 、M 31b + M and M 32 + Each independently represents a 1-valent organic cation. As represented by M 31a + 、M 31b + M and M 32 + Organic cations represented by the formula M 1 + The meaning is the same, and the preferred mode is the same.
L 31 L and L 32 Each independently represents a 2-valent organic group.
In the above formula (Ia-3), M is represented by 31a + 、M 31b + M and M 32 + Represented organic cations are replaced by H + The resulting compound PIa-3 is derived from the group A 32 The acid dissociation constant a2 of the acid site represented by H is larger than that derived from A 31a Acid dissociation constant a1-3 of acid site represented by H and derived from A 31b Acid of acid site represented by HDissociation constants a1-4. In addition, the acid dissociation constants a1-3 and a1-4 correspond to the acid dissociation constant a1 described above.
In addition, A 31a - A is a 32 - May be the same as or different from each other. And M is 31a + 、M 31b + M and M 32 + May be the same as or different from each other.
And M is 31a + 、M 31b + 、M 32 + 、A 31a - 、A 32 - 、L 31 L and L 32 At least one of them may have an acid-decomposable group as a substituent.
In the formula (Ia-4), A 41a - 、A 41b - A is a 42 - Each independently represents a 1-valent anionic functional group. In addition, from A 41a - A is a 41b - Definition of 1-valent anionic functional group represented by the above formula (Ia-2) and A 21a - A is a 21b - The meaning is the same. And, from A 42 - Definition of 1-valent anionic functional group represented by the above formula (Ia-3) and A 32 - The meaning is the same, and the preferred mode is the same.
M 41a + 、M 41b + M and M 42 + Each independently represents an organic cation.
L 41 Represents a 3-valent organic group.
In the above formula (Ia-4), M is represented by 41a + 、M 41b + M and M 42 + Represented organic cations are replaced by H + The compound PIa-4 is derived from A 42 The acid dissociation constant a2 of the acid site represented by H is larger than that derived from A 41a Acid dissociation constant a1-5 of acid site represented by H and derived from A 41b Acid dissociation constant a1-6 of the acid site represented by H. In addition, the acid dissociation constants a1 to 5 and a1 to 6 correspond to the acid dissociation constant a1 described above.
In addition, A 41a - 、A 41b - A is a 42 - May be the same as or different from each other. And M is 41a + 、M 41b + M and M 42 + May be the same as or different from each other.
And M is 41a + 、M 41b + 、M 42 + 、A 41a - 、A 41b - 、A 42 - L and L 41 At least one of them may have an acid-decomposable group as a substituent.
As L in the formula (Ia-2) 21 L and L 22 And L in formula (Ia-3) 31 L and L 32 The represented organic group having a valence of 2 is not particularly limited, examples include-CO-, -NR-; -O-, -S-, -SO 2 An alkylene group (preferably a straight-chain or branched-chain carbon atom number), a cycloalkylene group (preferably a 3-15-membered carbon atom number), an alkenylene group (preferably a 2-6-membered carbon atom number), a 2-valent aliphatic heterocyclic group (preferably a 5-to 10-membered ring having at least one N, O, S or Se atom in the ring structure, more preferably a 5-to 7-membered ring, further preferably a 5-to 6-membered ring.), a 2-valent aromatic heterocyclic group (preferably a 5-to 10-membered ring having at least one N, O, S or Se atom in the ring structure, further preferably a 5-to 7-membered ring, further preferably a 5-to 6-membered ring), a 2-valent aromatic hydrocarbon group (preferably a 6-to 10-membered ring, further preferably a 6-membered ring), and a 2-valent organic group in which a plurality of these groups are combined. The R may be a hydrogen atom or a 1-valent organic group. The 1-valent organic group is not particularly limited, and is preferably an alkyl group (preferably having 1 to 6 carbon atoms).
The alkylene group, the cycloalkylene group, the alkenylene group, the aliphatic heterocyclic group having 2 valences, the aromatic heterocyclic group having 2 valences, and the aromatic hydrocarbon ring group having 2 valences may have a substituent. Examples of the substituent include a halogen atom (preferably a fluorine atom).
As L in the formula (Ia-2) 21 L and L 22 And formula (Ia)3) L of (3) 31 L and L 32 The organic group having a valence of 2 represented by, for example, the following formula (L2) is also preferable.
[ chemical formula 58]
In the formula (L2), q represents an integer of 1 to 3. * Indicating the bonding location.
Xf each independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom. The number of carbon atoms of the alkyl group is preferably 1 to 10, more preferably 1 to 4. Further, as the alkyl group substituted with at least one fluorine atom, a perfluoroalkyl group is preferable.
Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, more preferably a fluorine atom or CF 3 . In particular, it is more preferable that both Xf are fluorine atoms.
L A Represents a single bond or a 2-valent linking group.
As represented by L A The represented 2-valent linking group is not particularly limited, for example, it is exemplified by-CO-; -O-, -SO 2 Alkylene (preferably having 1 to 6 carbon atoms and optionally branched), cycloalkylene (preferably having 3 to 15 carbon atoms), a 2-valent aromatic hydrocarbon ring group (preferably a 6 to 10-membered ring, more preferably a 6-membered ring), and a 2-valent linking group formed by combining a plurality of these groups.
The alkylene group, the cycloalkylene group, and the 2-valent aromatic hydrocarbon ring group may have a substituent. Examples of the substituent include a halogen atom (preferably a fluorine atom).
Examples of the organic group having a valence of 2 represented by the formula (L2) include-CF 2 -*、*-CF 2 -CF 2 -*、*-CF 2 -CF 2 -CF 2 -*、*-Ph-O-SO 2 -CF 2 -*、*-Ph-O-SO 2 -CF 2 -CF 2 -A kind of electronic device with high-pressure air-conditioning system? Ph-O-SO 2 -CF 2 -CF 2 -CF 2 -*、*-Ph-OCO-CF 2 -, etc. In addition, ph is a numberThe substituted phenylene group is preferably a 1, 4-phenylene group. The substituent is not particularly limited, and is preferably an alkyl group (for example, preferably a carbon number of 1 to 10, more preferably a carbon number of 1 to 6), an alkoxy group (for example, preferably a carbon number of 1 to 10, more preferably a carbon number of 1 to 6), or an alkoxycarbonyl group (for example, preferably a carbon number of 2 to 10, more preferably a carbon number of 2 to 6).
When L in formula (Ia-2) 21 L and L 22 When the organic group having a valence of 2 represented by formula (L2) is represented by formula (L2), L in formula (L2) A The pendant linkage is preferably with A in formula (Ia-2) 21a - A is a 21b - And (5) bonding.
And, when L in formula (Ia-3) 31 L and L 32 When the organic group having a valence of 2 represented by formula (L2) is represented by formula (L2), L in formula (L2) A The pendant linkage is preferably with A in formula (Ia-3) 31a - A is a 32 - And (5) bonding.
As L in the formula (Ia-4) 41 The 3-valent organic group represented by the following formula (L3) is not particularly limited, and examples thereof include 3-valent organic groups represented by the following formula (L3).
[ chemical formula 59]
In the formula (L3), L B Represents a hydrocarbon ring group having a valence of 3 or a heterocyclic group having a valence of 3. * Indicating the bonding location.
The hydrocarbon ring group may be an aromatic hydrocarbon ring group or an aliphatic hydrocarbon ring group. The number of carbon atoms contained in the hydrocarbon ring group is preferably 6 to 18, more preferably 6 to 14. The heterocyclic group may be an aromatic heterocyclic group or an aliphatic heterocyclic group. The heterocyclic ring is preferably a 5-to 10-membered ring having at least one of an N atom, an O atom, an S atom, and a Se atom in the ring structure, more preferably a 5-to 7-membered ring, and still more preferably a 5-to 6-membered ring.
As L B Among them, a hydrocarbon ring group having a valence of 3 is preferable, and a benzene ring group or an adamantane ring group is more preferable. Benzene ring radicals or radicalsThe adamantane ring group may have a substituent. The substituent is not particularly limited, and examples thereof include a halogen atom (preferably a fluorine atom).
And in the formula (L3), L B1 ～L B3 Each independently represents a single bond or a 2-valent linking group. As represented by L B1 ～L B3 The represented 2-valent linking group is not particularly limited, examples include-CO-, -NR-; -O-, -S-, -SO 2 An alkylene group (preferably a straight-chain or branched chain carbon atom number), a cycloalkylene group (preferably a 3-15 carbon atom number), an alkenylene group (preferably a 2-6 carbon atom number), a 2-valent aliphatic heterocyclic group (preferably a 5-to 10-membered ring having at least one N, O, S or Se atom in the ring structure, more preferably a 5-to 7-membered ring, further preferably a 5-to 6-membered ring), a 2-valent aromatic heterocyclic group (preferably a 5-to 10-membered ring having at least one N, O, S or Se atom in the ring structure, more preferably a 5-to 7-membered ring, further preferably a 5-to 6-membered ring), a 2-valent aromatic hydrocarbon ring (preferably a 6-to 10-membered ring, further preferably a 6-membered ring), and a 2-valent linking group obtained by combining these groups. The R may be a hydrogen atom or a 1-valent organic group. The 1-valent organic group is not particularly limited, and is preferably an alkyl group (preferably having 1 to 6 carbon atoms).
The alkylene group, the cycloalkylene group, the alkenylene group, the aliphatic heterocyclic group having 2 valences, the aromatic heterocyclic group having 2 valences, and the aromatic hydrocarbon ring group having 2 valences may have a substituent. Examples of the substituent include a halogen atom (preferably a fluorine atom).
As represented by L B1 ～L B3 A 2-valent linking group represented by the formula, preferably-CO-; -NR-, -O-, -S-, -SO 2 -an alkylene group which may have a substituent, and a 2-valent linking group obtained by combining a plurality of these groups.
As represented by L B1 ～L B3 The 2-valent linking group represented by formula (L3-1) is more preferable.
[ chemical formula 60]
In the formula (L3-1), L B11 Represents a single bond or a 2-valent linking group.
As represented by L B11 The represented 2-valent linking group is not particularly limited, for example, it is exemplified by-CO-; -O-, -SO 2 An alkylene group which may have a substituent (preferably having 1 to 6 carbon atoms, which may be linear or branched), and a 2-valent linking group obtained by combining a plurality of these groups. The substituent is not particularly limited, and examples thereof include a halogen atom and the like.
r represents an integer of 1 to 3.
Xf has the same meaning as Xf in the above formula (L2), and the preferable mode is the same.
* Indicating the bonding location.
As represented by L B1 ～L B3 A linker of 2 valency is represented by formula, examples thereof include is formed by: -O-x-O-SO 2 -CF 2 -*、*-O-SO 2 -CF 2 -CF 2 -*、*-O-SO 2 -CF 2 -CF 2 -CF 2 -A kind of electronic device with high-pressure air-conditioning system? COO-CH 2 -CH 2 -, etc.
When L in formula (Ia-4) 41 Comprises a 2-valent organic group represented by the formula (L3-1), and the 2-valent organic group represented by the formula (L3-1) is reacted with A 42 - In bonding, the bond on the carbon atom side as indicated in formula (L3-1) is preferably bonded to A in formula (Ia-4) 42 - And (5) bonding.
The following will explain the compounds represented by the formula (Ia-5).
[ chemical formula 61]
In the formula (Ia-5), A 51a - 、A 51b - A is a 51c - Each independently represents a 1-valent anionic functional group. Here, by A 51a - 、A 51b - A is a 51c - The 1-valent anionic functional group represented by the formula (I) means a compound comprising the above-mentioned anionic site A 1 - Is a 1-valent group. As a result of A 51a - 、A 51b - A is a 51c - The 1-valent anionic functional group represented by the formula (AX-1) is not particularly limited, and examples thereof include 1-valent anionic functional groups selected from the formulae (AX-1) to (AX-3).
A 52a - A is a 52b - Represents a 2-valent anionic functional group. Here, by A 52a - A is a 52b - The anionic functional group having a valence of 2 represented by the formula (I) means a compound comprising the above-mentioned anionic site A 2 - Is a 2-valent group. As a result of A 22 - Examples of the 2-valent anionic functional group include 2-valent anionic functional groups selected from the above-mentioned formulae (BX-8) to (BX-11).
M 51a + 、M 51b + 、M 51c + 、M 52a + M and M 52b + Each independently represents an organic cation. As represented by M 51a + 、M 51b + 、M 51c + 、M 52a + M and M 52b + Organic cations represented by the formula M 1 + The meaning is the same, and the preferred mode is the same.
L 51 L and L 53 Each independently represents a 2-valent organic group. As represented by L 51 L and L 53 An organic group having a valence of 2 and L in the above formula (Ia-2) 21 L and L 22 The meaning is the same, and the preferred mode is the same.
L 52 Represents a 3-valent organic group. As represented by L 52 An organic group having a valence of 3 and L in the above formula (Ia-4) 41 The meaning is the same, and the preferred mode is the same.
In the above formula (Ia-5), M is represented by 51a + 、M 51b + 、M 51c + 、M 52a + M and M 52b + Represented organic cations are replaced by H + The compound PIa-5 is derived from A 52a Acid dissociation constant a2-1 of acid site represented by H and derived from A 52b The acid dissociation constant a2-2 of the acid site represented by H is larger than that derived from A 51a H acid dissociation constant a1-1, derived from A 51b Acid dissociation constant a1-2 of acid site represented by H and derived from A 51c Acid dissociation constant a1-3 of the acid site represented by H. The acid dissociation constants a1-1 to a1-3 correspond to the acid dissociation constant a1, and the acid dissociation constants a2-1 and a2-2 correspond to the acid dissociation constant a2.
In addition, A 51a - 、A 51b - A is a 51c - May be the same as or different from each other. And A is 52a - A is a 52b - May be the same as or different from each other. And M is 51a + 、M 51b + 、M 51c + 、M 52a + M and M 52b + May be the same as or different from each other.
And M is 51b + 、M 51c + 、M 52a + 、M 52b + 、A 51a - 、A 51b - 、A 51c - 、L 51 、L 52 L and L 53 At least one of them may have an acid-decomposable group as a substituent.
Compound (II)
The compound (II) is a compound having 2 or more structural sites X and 1 or more structural sites Z described below, and generating an acid containing 2 or more 1 st acid sites derived from the structural sites X and the structural sites Z by irradiation with actinic rays or radiation.
Structural part Z: nonionic sites capable of neutralizing acids
In the compound (II), the structural site X is defined and A is 1 - M and M 1 + Definition of (A) and definition of structural site X in the above Compound (I)Sense and A 1 - M and M 1 + The definition of (c) is the same, and the preferred mode is the same.
In the above-mentioned compound (II), H is used + Substitution of the cationic site M in the structural site X 1 + The PII compound is derived from H + Substitution of the cationic site M in the structural site X 1 + Made of HA 1 The preferable range of the acid dissociation constant a1 of the acid site is the same as the acid dissociation constant a1 of the compound PI.
In addition, when the compound (II) is, for example, a compound that generates an acid having 2 acid sites 1 derived from the structural site X and the structural site Z, the compound PII corresponds to "having 2 HA 1 Is a compound of formula (I). When the acid dissociation constant of the compound PII was determined, the compound PII became "having 1A 1 - And 1 HA 1 Acid dissociation constant at the time of "compound of (2)" having 1A 1 - And 1 HA 1 The compounds "become" having 2A 1 - The acid dissociation constant at the time of the compound "corresponds to the acid dissociation constant a1.
The acid dissociation constant a1 was obtained by the method for measuring the acid dissociation constant.
When the compound (II) is irradiated with actinic rays or radiation, the above-mentioned compound PII corresponds to the acid produced.
The 2 or more structural sites X may be the same or different. And 2 or more of the above A 1 - More than 2M 1 + The two may be the same or different.
The nonionic moiety capable of neutralizing the acid in the structural moiety Z is not particularly limited, and for example, a moiety containing a group capable of electrostatic interaction with a proton or a functional group having an electron is preferable.
Examples of the functional group capable of electrostatic interaction with a proton or the functional group having an electron include a functional group having a macrocyclic compound structure such as a cyclic polyether, and a functional group having a nitrogen atom having an unshared electron pair which does not contribute to pi conjugation. The nitrogen atom having an unshared pair of electrons that does not contribute to pi conjugation is, for example, a nitrogen atom having a partial structure represented by the following formula.
[ chemical formula 62]
Examples of the partial structure having a functional group capable of electrostatically interacting with a proton or an electron include a crown ether structure, an aza crown ether structure, a primary amine structure, a secondary amine structure, a tertiary amine structure, a pyridine structure, an imidazole structure, and a pyrazine structure, and among these, a primary amine structure, a secondary amine structure, and a tertiary amine structure are preferable.
The compound (II) is not particularly limited, and examples thereof include compounds represented by the following formulas (IIa-1) and (IIa-2).
[ chemical formula 63]
In the above formula (IIa-1), A 61a - A is a 61b - Respectively with A in the above formula (Ia-1) 11 - The meaning is the same, and the preferred mode is the same. And M is 61a + M and M 61b + Respectively with M in the above formula (Ia-1) 11 + The meaning is the same, and the preferred mode is the same.
In the above formula (IIa-1), L 61 L and L 62 Respectively with L in the above formula (Ia-1) 1 The meaning is the same, and the preferred mode is the same.
In the formula (IIa-1), R 2X An organic group having a valence of 1. As represented by R 2X The organic group having a valence of 1 is not particularly limited, and examples thereof include-CH 2 Can be selected from-CO-, -NH-, -O-, -S-, -SO-and-SO-, and 2 -1 or more than 2 of the combined substitutionsAlkyl (preferably having 1 to 10 carbon atoms, which may be straight or branched), cycloalkyl (preferably having 3 to 15 carbon atoms), alkenyl (preferably having 2 to 6 carbon atoms), and the like.
The alkylene group, the cycloalkylene group, and the alkenylene group may have a substituent. The substituent is not particularly limited, and examples thereof include a halogen atom (preferably a fluorine atom).
In the above formula (IIa-1), H is used + Substituted by M 61a + M and M 61b + The organic cation represented by formula (I) is a compound PIIa-1 derived from A 61a Acid dissociation constant a1-7 of acid site represented by H and derived from A 61b The acid dissociation constants a1 to 8 of the acid sites represented by H correspond to the acid dissociation constant a1 described above.
In the above-mentioned compound (IIa-1), H is used + Substitution of the cationic site M in the structural site X 61a + M and M 61b + The PIIa-1 compound corresponds to HA 61a -L 61 -N(R 2X )-L 62 -A 61b H. The compound PIIa-1 is the same as an acid produced by the compound represented by the formula (IIa-1) upon irradiation with actinic rays or radiation.
And M is 61a + 、M 61b + 、A 61a - 、A 61b - 、L 61 、L 62 R is R 2X At least one of them may have an acid-decomposable group as a substituent.
In the above formula (IIa-2), A 71a - 、A 71b - A is a 71c - Respectively with A in the above formula (Ia-1) 11 - The meaning is the same, and the preferred mode is the same. And M is 71a + 、M 71b + M and M 71c + Respectively with M in the above formula (Ia-1) 11 + The meaning is the same, and the preferred mode is the same.
In the above formula (IIa-2), L 71 、L 72 L and L 73 Respectively with the formula (Ia-1) L 1 The meaning is the same, and the preferred mode is the same.
In the above formula (IIa-2), the reaction of M 71a + 、M 71b + M and M 71c + Represented organic cations are replaced by H + The PIIa-2 compound is derived from A 71a Acid dissociation constant a1-9 of acid site represented by H derived from A 71b Acid dissociation constant a1-10 of acid site represented by H and derived from A 71c The acid dissociation constants a1 to 11 of the acid sites represented by H correspond to the acid dissociation constant a1 described above.
In the above-mentioned compound (IIa-1), H is used + Substitution of the cationic site M in the structural site X 71a + 、M 71b + M and M 71c + The PIIa-2 compound corresponds to HA 71a -L 71 -N(L 73 -A 71c H)-L 72 -A 71b H. The compound PIIa-2 is the same as an acid produced by the compound represented by the formula (IIa-2) upon irradiation with actinic rays or radiation.
And M is 71a + 、M 71b + 、M 71c + 、A 71a - 、A 71b - 、A 71c - 、L 71 、L 72 L and L 73 At least one of them may have an acid-decomposable group as a substituent.
The photoacid generator as the onium salt may be a compound having 2 or more structural sites X described below, or may be a compound that generates 2 acidic sites derived from the structural sites X by irradiation with actinic rays or radiation.
Structural part X: from anionic site A 1 - Cation site M 1 + Composition, and formed by irradiation of actinic rays or radiation 1 Structural part of the acid part shown
The above 2 or more structural parts X may be the same or different. And 2 or more of the above A 1 - More than 2M 1 + The two may be the same or different.
Definition of structural site X and A 1 - M and M 1 + Definition of (A) and definition of structural site X in the above-mentioned compound (I), and definition of A 1 - M and M 1 + The definition of (c) is the same, and the preferred mode is the same.
The organic cations shown below and other sites can be appropriately combined to be used as photoacid generator for onium salts.
First, an organic cation is exemplified.
As the organic cation, a cation portion of the repeating unit exemplified by the repeating unit (a) can also be used.
[ chemical formula 64]
[ chemical formula 65]
[ chemical formula 66]
Next, a site other than the organic cation (organic anion) is exemplified.
The numerical values shown in the vicinity of the anionic functional groups in the organic anions below are pKa of the acid groups in which hydrogen is bonded to each anionic functional group.
[ chemical formula 67]
[ chemical formula 68]
[ chemical formula 69]
[ chemical formula 70]
[ chemical formula 71]
/>
(photoacid generator as intramolecular salt)
The photoacid generator as the intramolecular salt preferably has a sulfonic acid anion or a carboxylic acid anion (preferably an aromatic sulfonic acid or an aromatic carboxylic acid anion), and further preferably has a sulfonium cation or an iodonium cation.
Examples of the photoacid generator which is an intramolecular salt include compound (ZbI) and compound (zbrii).
The compound (ZbI) is represented by the newly defined formula (ZaI), R 201 ～R 203 One of them has a structure comprising-SO 3 - or-COO - Aryl groups as substituents.
The compound (ZbII) is represented by the newly defined formula (ZaII), R 204 R is R 205 One of them has a structure comprising-SO 3 - or-COO - Aryl groups as substituents.
Of the above-mentioned compound (ZbI) and the above-mentioned compound (ZbII), the compound contains-SO 3 - or-COO - Examples of the group (A) include the removal of W from AN organic anion represented by the formula (AN) shown in the description of the organic anionThe radical (formed by "AX- [ C (Xf)]。-[C(R 4 ) (R 5 )] p -(L) q -a group represented by ").
Photoacid generators are exemplified as the intramolecular salts.
[ chemical formula 72]
Further, as the photoacid generator, it is preferable to generate a volume by irradiation of electron beam or extreme ultraviolet rays from the viewpoint of suppressing diffusion of acid generated by exposure to a non-exposed portion and improving resolutionThe acid compounds of the above size, more preferably produce volume +.>Acid compounds of the above size. Further, the above volume is preferably +. >Hereinafter, more preferable is +>The following is given.
Is 1X 10 -10 m。
In the present specification, the volume value of the acid generated by the photoacid generator is a value calculated by the following method.
The structure optimization for acid generation was performed by the PM3 (Parameterized Model number 3) method using MOPAC7 contained in Winmostar (X-accuracy corporation). With respect to the obtained optimized structure, van der waals (Van der waals) volumes were calculated by the method described in non-patent document 1 using Winmostar (software manufactured by X-Ability corporation).
Non-patent document 1: improvement of calculation procedure of molecular surface area and volume, changweihui Kokai, pages 111-120, no. 27, 1993, research reports Hakodate Technical college
As the photoacid generator, paragraphs [0368] to [0377] of japanese patent application laid-open publication No. 2014-41328 and paragraphs [0240] to [0262] of japanese patent application laid-open publication No. 2013-228681 (corresponding us patent application publication No. 2015/004533, [0339] of the specification) can be cited, and these contents are incorporated into the present specification.
The photoacid generator may be used alone or in combination of 1 or 2 or more.
When the resist composition of the present application contains a photoacid generator, the content thereof is preferably more than 0% by mass and 70% by mass or less, more preferably 0.1 to 45% by mass, still more preferably 0.5 to 35% by mass, and particularly preferably 0.6 to 10% by mass, relative to the total solid content of the resist composition.
When the photoacid generator contains a photoacid generator other than the photodegradable alkali compound described later, the content thereof is preferably more than 0% by mass and 70% by mass or less, more preferably 0.5 to 45% by mass, still more preferably 0.5 to 35% by mass, and particularly preferably 0.6 to 10% by mass, relative to the total solid content of the resist composition.
[ acid diffusion controlling agent ]
The resist composition of the present invention may contain an acid diffusion controlling agent.
The acid diffusion controlling agent captures an acid generated from a photoacid generator or the like at the time of exposure and functions as a quencher that suppresses a reaction of the resin (a) in the unexposed portion due to the excessively generated acid.
Examples of the acid diffusion controlling agent include a basic compound (DA), a low-molecular compound (DD) having a nitrogen atom and a group which is detached by the action of an acid, and an onium salt compound (DE) having a nitrogen atom in the cation portion.
In the composition of the present invention, a known acid diffusion controlling agent can be suitably used. For example, known compounds disclosed in paragraphs [0627] to [0664] in the specification of U.S. patent application publication 2016/007467A 1, paragraphs [0095] to [0187] in the specification of U.S. patent application publication 2015/0004544A1, paragraphs [0403] to [0423] in the specification of U.S. patent application publication 2016/0237190A1, and paragraphs [0259] to [0328] in the specification of U.S. patent application publication 2016/0274458A1 can be preferably used as the acid diffusion controlling agent.
The basic compound (DA) is preferably a compound having a structure represented by any one of the following general formulae (a) to (E).
[ chemical formula 73]
In the general formula (A), R 200 、R 201 R is R 202 Each independently represents a hydrogen atom, an alkyl group (preferably having 1 to 20 carbon atoms), a cycloalkyl group (preferably having 3 to 20 carbon atoms), or an aryl group (preferably having 6 to 20 carbon atoms). R is R 201 And R is R 202 May bond to each other to form a ring.
In the general formula (E), R 203 、R 204 、R 205 R is R 206 Each independently represents an alkyl group having 1 to 20 carbon atoms.
The alkyl group in the general formula (a) and the general formula (E) may have a substituent or may be unsubstituted.
The alkyl group is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms as the substituent.
The alkyl groups in the general formulae (a) and (E) are more preferably unsubstituted.
The basic compound is preferably thiazole, benzothiazole, imidazole, benzimidazole, oxazole, benzoxazole, guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, morpholine, aminomorpholine, aminoalkylmorpholine, piperidine, aniline or a compound having these structures, more preferably a compound having a thiazole structure, benzothiazole structure, imidazole structure, benzimidazole structure, oxazole structure, benzoxazole structure, diazabicyclo structure, morpholine structure, onium hydroxide structure, carboxylate structure, trialkylamine structure, aniline structure or pyridine structure, an alkylamine derivative having a hydroxyl group and/or an ether bond or an aniline derivative having a hydroxyl group and/or an ether bond, or the like.
The low molecular compound (DD) (hereinafter also referred to as "compound (DD)") having a nitrogen atom and having a group that is detached by the action of an acid is preferably an amine derivative having a group that is detached by the action of an acid.
The group to be released by the action of an acid is preferably an acetal group, a carbonate group, a urethane group, a tertiary ester group, a tertiary hydroxyl group or a semiacetal ether group, more preferably a urethane group or a semiacetal ether group.
The molecular weight of the compound (DD) is preferably 100 to 1000, more preferably 100 to 700, and still more preferably 100 to 500.
The compound (DD) may have a urethane group having a protecting group on a nitrogen atom. Examples of the protecting group constituting the urethane group include groups represented by the following general formula (d-1).
[ chemical formula 74]
In the general formula (d-1),
rb each independently represents a hydrogen atom, an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 30 carbon atoms), an aryl group (preferably having 3 to 30 carbon atoms), an aralkyl group (preferably having 1 to 10 carbon atoms), or an alkoxyalkyl group (preferably having 1 to 10 carbon atoms). 2 Rb may be bonded to each other to form a ring.
The alkyl group, cycloalkyl group, aryl group, and aralkyl group represented by Rb may be each independently substituted with a functional group such as a hydroxyl group, cyano group, amino group, pyrrolidino group, piperidino group, morpholino group, oxo group, or the like, an alkoxy group, or a halogen atom. The same applies to alkoxyalkyl groups represented by Rb.
Rb is preferably a linear or branched alkyl group, cycloalkyl group or aryl group, more preferably a linear or branched alkyl group or cycloalkyl group.
Examples of the ring formed by bonding 2 Rb to each other include alicyclic hydrocarbons, aromatic hydrocarbons, heterocyclic hydrocarbons, derivatives thereof, and the like.
Specific examples of the structure of the group represented by the general formula (d-1) include, but are not limited to, the structure disclosed in paragraph [0466] in the specification of U.S. patent publication No. US2012/0135348A 1.
The compound (DD) preferably has a structure represented by the following general formula (6).
[ chemical formula 75]
In the general formula (6), the amino acid sequence,
l represents an integer of 0 to 2, m represents an integer of 1 to 3, and l+m=3 is satisfied.
Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. When l is 2, 2 Ra may be the same or different, and 2 Ra may be bonded to each other to form a heterocyclic ring together with the nitrogen atom in the formula. The heterocyclic ring may contain a heteroatom other than the nitrogen atom in the formula.
L N Represents a single bond or a 2-valent linking group. The above-mentioned 2-valent linking group is preferably an alkylene group (may be linear or branched, and has 1 to 6 carbon atoms, for example).
Rb has the same meaning as Rb in the above formula (d-1) and the preferred examples are also the same.
In the general formula (6), the alkyl group, cycloalkyl group, aryl group, and aralkyl group as Ra may be substituted with the same groups as those described above as the alkyl group, cycloalkyl group, aryl group, and aralkyl group which may be substituted independently as Rb.
Specific examples of the alkyl group, cycloalkyl group, aryl group and aralkyl group of Ra (these groups may be substituted with the above groups) include the same ones as those described above for Rb.
Specific examples of the particularly preferred compound (DD) in the present invention include, but are not limited to, the compounds disclosed in paragraph [0475] in specification of U.S. patent application publication 2012/0135348 A1.
The onium salt compound (DE) having a nitrogen atom in the cation portion (hereinafter, also referred to as "compound (DE)") is preferably a component not corresponding to the photoacid generator.
The compound (DE) is preferably a compound having a basic site containing a nitrogen atom in the cation portion. The basic moiety is preferably an amino group, more preferably a nitrogen-containing aromatic ring group (such as a pyridyl group) or an aliphatic amino group.
The nitrogen-containing aromatic ring group is an aromatic ring group having 1 or more (for example, 1 to 3) nitrogen atoms as ring members, and may be a single ring or multiple rings, and the number of ring members is, for example, 5 to 15, and may or may not have a heteroatom other than a nitrogen atom. Examples of the nitrogen-containing aromatic ring group include a pyridine ring group.
It is further preferable that all atoms adjacent to the nitrogen atom in the basic moiety are hydrogen atoms or carbon atoms. In addition, from the viewpoint of improving basicity, it is preferable that the functional group (carbonyl group, sulfonyl group, cyano group, halogen atom, etc.) having electron withdrawing property is not directly connected to the nitrogen atom.
The cationic part of the compound (DE) is preferably a quaternary ammonium cation.
Examples of the quaternary ammonium cation include cations represented by the following formula (ZaIII).
(R CA ) 4 N + (ZaIII)
Wherein R is CA Represents an alkyl group. The substituent which the above alkyl group may have is preferably a hydroxyl group or a phenyl group. 4R CA May be the same as or different from each other.
As represented by R CA The alkyl group is preferably an alkyl group having 1 to 6 carbon atoms.
As represented by R CA The alkyl group represented is preferably a methyl group, an ethyl group, a propyl group, a butyl group, a 2-hydroxyethyl group or a benzyl group, more preferably a methyl group, an ethyl group, a propyl group, a butyl group or a 2-hydroxyethyl group, and still more preferably a methyl group, an ethyl group or a 2-hydroxyethyl group.
Wherein the method comprises the steps ofThe compound (DE) preferably has the quaternary ammonium cation as a cation portion and OH as an anion portion - Ammonium hydroxide of (a).
Preferred specific examples of the compound (DE) include, but are not limited to, the compounds disclosed in paragraph [0203] in the specification of U.S. patent application publication 2015/0309408A 1.
As the acid diffusion controlling agent, the compounds described in paragraphs [0204] to [0206] of international publication No. 2018/193954 can be used as long as they correspond to the acid diffusion controlling agent in the resist composition of the present invention.
Further, the compound used as the photoacid generator may also serve as an acid diffusion control agent.
Photoacid generators that also act as acid diffusion control agents are also known as photodegradable base compounds.
Examples of the photodegradable alkali compound include photoacid generators which are onium salts, and the anions are those represented by the general formulae (d 1-1) to (d 1-3).
Examples of the photodegradable alkali compound include photoacid generators which are intramolecular salts and have carboxylic acid anions (for example, the compound (ZbII) represented by the newly defined formula is R in the formula (ZaII) 204 R is R 205 1 of (C) is a compound having a compound containing-COO - Aryl groups as substituents).
The resist composition preferably comprises a photodegradable alkali compound. That is, it is also preferable that at least a part of the photoacid generator and/or the acid diffusion control agent is a photodegradable alkali compound.
The content of the photodegradable alkali compound is preferably 10 to 100% by mass, more preferably 60 to 100% by mass, and even more preferably 90 to 100% by mass, relative to the total mass of the acid diffusion control agent.
The content of the photodegradable alkali compound is preferably 5 to 100% by mass, more preferably 20 to 100% by mass, and even more preferably 40 to 100% by mass, relative to the total mass of the photoacid generator.
The acid diffusion controlling agent may be used alone in an amount of 1 kind or in an amount of 2 or more kinds.
The content of the acid diffusion controlling agent is preferably 0.01 to 30% by mass, more preferably 0.1 to 20% by mass, and even more preferably 0.5 to 15% by mass, based on the total solid content of the resist composition.
When the acid diffusion controlling agent contains an acid diffusion controlling agent other than the photodegradable alkali compound, the content thereof is preferably 0.01 to 30% by mass, more preferably 0.05 to 20% by mass, still more preferably 0.1 to 15% by mass, and particularly preferably 0.2 to 5% by mass, relative to the total solid content of the resist composition.
When the resist composition contains the photodegradable alkali compound, the content thereof is preferably 0.01 to 30% by mass, more preferably 0.1 to 20% by mass, still more preferably 0.5 to 15% by mass, and particularly preferably 0.6 to 10% by mass, relative to the total solid content of the resist composition.
[ surfactant ]
The resist composition may also contain a surfactant. When the surfactant is contained, a pattern having more excellent adhesion and fewer development defects can be formed.
The surfactant is preferably a fluorine-based and/or silicon-based surfactant.
As the fluorine-based and/or silicon-based surfactant, for example, the surfactants disclosed in paragraphs [0218] and [0219] of International publication No. 2018/19395 can be used.
When the resist composition contains a surfactant, the content thereof is preferably 0.0001 to 2% by mass, more preferably 0.0005 to 1% by mass, relative to the total solid content of the composition.
The surfactant may be used alone or in combination of 1 or 2 or more. When 2 or more kinds are used, the total content thereof is preferably within the above-mentioned preferred content range.
[ solvent ]
The resist composition may also contain a solvent.
The solvent preferably contains at least one of (M1) a propylene glycol monoalkyl ether carboxylate and (M2), and (M2) is at least one selected from the group consisting of propylene glycol monoalkyl ether, lactate, acetate, alkoxypropionate, chain ketone, cyclic ketone, lactone and alkylene carbonate. The solvent may contain components other than the components (M1) and (M2).
The present inventors have found that when such a solvent is used in combination with the above resin, the coatability of the composition is improved and a pattern having a small number of development defects can be formed. Although the reason for this is not clear, the present inventors considered that the reason for this is that the solvent has a good balance among solubility in the resin, boiling point and viscosity, and therefore, the film thickness of the composition film is not uniform, and the occurrence of precipitates during spin coating can be suppressed.
Details of the component (M1) and the component (M2) are described in paragraphs [0218] to [0226] of International publication No. 2020/004306.
When the solvent further contains components other than the components (M1) and (M2), the content of the components other than the components (M1) and (M2) is preferably 5 to 30% by mass with respect to the total amount of the solvent.
The solvent may be used alone or in combination of 1 or more than 2.
The content of the solvent in the resist composition is preferably set to 30 mass% or less, more preferably 10 mass% or less, and further preferably 2 mass% or less of the solid content concentration. The lower limit value is preferably set to 0.05 mass% or more, more preferably set to 0.1 mass% or more, and still more preferably set to 0.5 mass% or more.
In this way, the coatability of the resist composition can be further improved.
In other words, the content of the solvent in the resist composition is preferably 70 to 99.95% by mass, more preferably 90 to 99.9% by mass, relative to the total mass of the resist composition. More preferably 98 to 99.5 mass%.
[ other additives ]
The resist composition may further contain other resins (hydrophobic resins, etc.) not corresponding to the resin (a), dissolution-inhibiting compounds, dyes, plasticizers, photosensitizers, light absorbers, and/or compounds that promote solubility to a developer (alicyclic or aliphatic compounds containing a carboxylic acid group).
The resist composition may further comprise a dissolution inhibiting compound. The "dissolution-inhibiting compound" herein is a compound having a molecular weight of 3000 or less, which is decomposed by the action of an acid and has reduced solubility in an organic developer.
The resist composition of the present invention is also suitable for use as a photosensitive composition for EUV exposure or a photosensitive composition for electron beam exposure.
In EUV light and electron beams, the influence of "photon shot noise" having a deviation in the number probability of photons is large, and deterioration of LER and bridging defects are liable to occur. In order to reduce photon shot noise, there is a method of increasing the number of incident photons by increasing the exposure amount, but this tends to be a compromise with the requirement of high sensitivity.
When the a value obtained by the following formula (1) is high, the EUV and electron beam absorption efficiency of a resist film formed from the resist composition becomes high, and it is effective for reducing photon shot noise. The a value represents the absorption efficiency of EUV and electron beam in the mass ratio of the resist film.
Formula (1): a= ([ H ] ×0.04+ [ C ] ×1.0+ [ N ] ×2.1+ [0] ×3.6+ [ F ] ×5.6+ [ S ] ×1.5+ [ I ] ×39.5)/([ H ] ×1+ [ C ] ×12+ [ N ] ×14+ [ O ] ×16+ [ F ] ×19+ [ S ] ×32+ [ I ] ×127)
The value A is preferably 0.120 or more. The upper limit is not particularly limited, but if the a value is too large, EUV and electron beam transmittance of the resist film decreases, and as a result, the optical image profile in the resist film deteriorates, and it is difficult to obtain a good pattern shape, so that it is preferably 0.240 or less, more preferably 0.220 or less.
In addition, in the formula (1), [ H ] represents the molar ratio of hydrogen atoms derived from the total solid content to all atoms of the total solid content in the actinic or radiation-sensitive resin composition, [ C ] represents the molar ratio of carbon atoms derived from the total solid content to all atoms of the total solid content in the actinic or radiation-sensitive resin composition, [ N ] represents the molar ratio of nitrogen atoms derived from the total solid content to all atoms of the total solid content in the actinic or radiation-sensitive resin composition, [ O ] represents the molar ratio of oxygen atoms derived from the total solid content to all atoms of the total solid content in the actinic or radiation-sensitive resin composition, [ F ] represents the molar ratio of fluorine atoms derived from the total solid content to all atoms of the total solid content in the actinic or radiation-sensitive resin composition, [ S ] represents the molar ratio of sulfur atoms derived from the total solid content to all atoms of the total solid content in the actinic or radiation-sensitive resin composition, [ I ] represents the molar ratio of iodine atoms derived from the total solid content to all atoms of the actinic or radiation-sensitive resin composition.
For example, when the resist composition contains the resin (a), the basic compound, and the solvent, the resin (a) and the basic compound correspond to solid components. That is, all atoms of the total solid content correspond to the total of all atoms derived from the resin (a) and all atoms derived from the basic compound. For example, [ H ] represents the molar ratio of hydrogen atoms derived from the total solid content to all atoms derived from the total solid content, and is described based on the above examples, and [ H ] represents the molar ratio of the total of hydrogen atoms derived from the resin (A) and hydrogen atoms derived from the basic compound to the total of all atoms derived from the resin (A) and all atoms derived from the basic compound.
Calculation of a value when the structure and content of constituent components of the total solid content in the resist composition are known, the value can be calculated by calculating the atomic number ratio contained. Even when the constituent components are unknown, the constituent atomic ratio of the resist film obtained by evaporating the solvent components of the resist composition can be calculated by an analytical method such as elemental analysis.
[ resist film, pattern Forming method ]
The step of the pattern formation method using the resist composition is not particularly limited, and the following steps are preferable.
Step 1: a step of forming a resist film on a substrate using the resist composition
Step 2: exposing the resist film
And step 3: developing the exposed resist film with a developer
In addition, in the step 3, an alkaline developer is used as the developer, and it is more preferable to perform the pattern formation method as the positive pattern formation method.
The steps of the above steps will be described in detail below.
< procedure 1: resist film Forming Process-
Step 1 is a step of forming a resist film on a substrate using the resist composition.
The definition of the resist composition is as described above.
As a method for forming a resist film on a substrate using the resist composition, for example, a method of applying the resist composition to a substrate is mentioned.
In addition, the resist composition is preferably subjected to filter filtration as needed before coating. The pore size of the filter is preferably 0.1 μm or less, more preferably 0.05 μm or less, and still more preferably 0.03 μm or less. The filter is preferably made of polytetrafluoroethylene, polyethylene or nylon.
The resist composition can be coated on a substrate (e.g., silicon dioxide coating) used in the manufacture of, for example, integrated circuit elements by a suitable coating method such as a spin coater or coater. The coating method is preferably spin coating using a spin coater. The rotation speed in spin coating using a spin coater is preferably 1000 to 3000rpm.
The substrate may be dried to form a resist film after the resist composition is applied. In addition, various base films (inorganic films, organic films, antireflection films) may be formed on the lower layer of the resist film as needed.
Examples of the drying method include a method of drying by heating. Heating can be performed by a device provided in a general exposure machine and/or development machine, or heating can be performed by a hot plate or the like. The heating temperature is preferably 80 to 150 ℃, more preferably 80 to 140 ℃, and still more preferably 80 to 130 ℃. The heating time is preferably 30 to 1000 seconds, more preferably 60 to 800 seconds, and still more preferably 60 to 600 seconds.
The thickness of the resist film is not particularly limited, but is preferably 10 to 120nm in view of forming a fine pattern with higher accuracy. In the case of EUV exposure or electron beam exposure, the thickness of the resist film is more preferably 10 to 65nm, and still more preferably 15 to 50nm.
In addition, a top coat layer may be formed on top of the resist film using the top coat composition.
It is preferable that the top coat composition can be further uniformly coated on the upper layer of the resist film without mixing with the resist film. The top coat layer is not particularly limited, and a conventionally known top coat layer can be formed by a conventionally known method, and for example, the top coat layer can be formed based on the descriptions in paragraphs [0072] to [0082] in Japanese patent application laid-open No. 2014-059543.
For example, it is preferable to form a top coat layer containing an alkaline compound as described in japanese patent application laid-open No. 2013-61648 on a resist film. Specific examples of the basic compound that the topcoat layer can contain include basic compounds that the resist composition can contain.
Also, the top coat layer preferably further comprises a compound comprising at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond.
< procedure 2: exposure procedure ]
The step 2 is a step of exposing the resist film.
As a method of exposure, a method of irradiating a formed resist film with actinic rays or radiation through a predetermined mask is exemplified.
Examples of the actinic rays or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultraviolet light, X-rays and electron beams, preferably far ultraviolet light having a wavelength of 250nm or less, more preferably 220nm or less, particularly preferably 1 to 200nm, and specifically KrF excimer laser (wavelength 248 nm), arF excimer laser (wavelength 193 nm) and F 2 Excimer laser (wavelength)157 nm), EUV (wavelength 13 nm), X-rays and electron beams.
Among them, the actinic rays or radiation used for exposure is preferably EUV or electron beam.
The baking (heating) is preferably performed before development after exposure. The response of the exposed portion is promoted by baking, and the sensitivity and pattern shape become more excellent.
The heating temperature is preferably 80 to 150 ℃, more preferably 80 to 140 ℃, and still more preferably 80 to 130 ℃.
The heating time is preferably 10 to 1000 seconds, more preferably 10 to 180 seconds, and still more preferably 30 to 120 seconds.
The heating may be performed by a device provided in a general exposure machine and/or developing machine, or may be performed by a hot plate or the like.
This process is also called post-exposure bake (PEB: post Exposure Bake).
< procedure 3: development Process-
The step 3 is a step of developing the exposed resist film with a developer to form a pattern.
The developer may be an alkaline developer, or may be a developer containing an organic solvent (hereinafter, also referred to as an organic-based developer), and is preferably an alkaline developer.
When an alkaline developer is used as the developer, a positive pattern can be formed in general. When an organic developer is used as the developer, a negative pattern can be formed in general.
Examples of the developing method include: a method of immersing the substrate in a tank filled with a developer for a certain period of time (dip method); a method (spin immersion method) in which a developer is raised on the surface of a substrate by surface tension and left for a predetermined period of time to develop; a method of spraying a developer solution onto a substrate surface (spray method); and a method (dynamic dispense method, dynamic dispensing method) of continuously discharging the developer while scanning the developer discharge nozzle at a constant speed on the substrate rotating at a constant speed.
After the development step, a step of stopping development while replacing with another solvent may be performed.
The development time is not particularly limited as long as the resin in the unexposed portion is sufficiently dissolved, and is preferably 10 to 300 seconds, more preferably 20 to 120 seconds.
The temperature of the developing solution is preferably 0 to 50 ℃, more preferably 15 to 35 ℃.
The alkaline developer preferably uses an aqueous alkali solution containing an alkali. The type of the aqueous alkali solution is not particularly limited, and examples thereof include aqueous alkali solutions containing quaternary ammonium salts typified by tetramethylammonium hydroxide, inorganic bases, primary amines, secondary amines, tertiary amines, alcohol amines, cyclic amines, and the like. Among them, the alkaline developer is preferably an aqueous solution of a quaternary ammonium salt typified by tetramethylammonium hydroxide (TMAH). An appropriate amount of alcohol, surfactant, or the like may be added to the alkaline developer. The alkali concentration of the alkali developer is usually 0.1 to 20 mass%. The pH of the alkaline developer is usually 10.0 to 15.0. The content of water in the alkaline developer is preferably 51 to 99.95 mass%.
The organic developer preferably contains at least one organic solvent selected from the group consisting of ketone solvents, ester solvents, alcohol solvents, amide solvents, ether solvents, and hydrocarbon solvents.
The above solvents may be mixed in plural, or may be mixed with a solvent other than the above or water. The water content of the entire developer is preferably less than 50% by mass, more preferably less than 20% by mass, still more preferably less than 10% by mass, and particularly preferably substantially no water.
The content of the organic solvent in the organic developer is preferably 50 to 100% by mass, more preferably 80 to 100% by mass, still more preferably 90 to 100% by mass, and particularly preferably 95 to 100% by mass, based on the total amount of the developer.
< other procedure >
The pattern forming method preferably includes a step of cleaning with a rinse solution after the step 3.
The rinse liquid used in the rinsing step after the step of developing with an alkaline developer is, for example, pure water. In addition, a surfactant may be added to pure water in an appropriate amount.
The rinse solution may be added with a surfactant in an appropriate amount.
The rinse solution used in the rinse step after the development step using the organic developer is not particularly limited as long as the pattern-insoluble rinse solution is one, and a solution containing a normal organic solvent can be used. The rinse solution preferably contains at least one organic solvent selected from the group consisting of hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents, and ether solvents.
The method of the rinsing step is not particularly limited, and examples thereof include a method of continuously spraying a rinse solution onto a substrate rotating at a constant speed (spin coating method), a method of immersing the substrate in a tank filled with the rinse solution for a constant time (immersion method), and a method of spraying the rinse solution onto the surface of the substrate (spray method).
Further, the pattern forming method of the present invention may include a heating process (Post Bake) after the rinsing process. The developer and rinse liquid remaining between the patterns and inside the patterns by baking can be removed by this step. Further, this step has an effect of smoothing the resist pattern and improving the surface roughness of the pattern. The heating step after the rinsing step is usually carried out at 40 to 250 ℃ (preferably 90 to 200 ℃), usually for 10 seconds to 3 minutes (preferably 30 seconds to 120 seconds).
Further, the etching process of the substrate may be performed using the formed pattern as a mask. That is, the pattern formed in step 3 may be used as a mask, and the substrate (or the underlayer film and the substrate) may be processed to form a pattern on the substrate.
The method of processing the substrate (or the underlayer film and the substrate) is not particularly limited, and a method of forming a pattern on the substrate by dry etching the substrate (or the underlayer film and the substrate) using the pattern formed in step 3 as a mask is preferable. The dry etch is preferably an oxygen plasma etch.
The resist composition and the various materials (for example, a solvent, a developer, a rinse solution, an antireflective film-forming composition, a top coat-forming composition, and the like) used in the pattern-forming method of the present invention preferably do not contain impurities such as metals. The content of impurities contained in these materials is preferably 1 mass ppm or less, more preferably 10 mass ppb or less, further preferably 100 mass ppt or less, particularly preferably 10 mass ppt or less, and most preferably 1 mass ppt or less. Examples of the metal impurities include Na, K, ca, fe, cu, mg, al, li, cr, ni, sn, ag, as, au, ba, cd, co, pb, ti, V, W and Zn.
Examples of the method for removing impurities such as metals from various materials include filtration using a filter. Details of filtration using a filter are described in paragraph [0321] of International publication No. 2020/004306.
Examples of the method for reducing impurities such as metals contained in the respective materials include a method for selecting a raw material having a small metal content as a raw material constituting the respective materials, a method for filtering the raw material constituting the respective materials by a filter, and a method for distilling the raw material by lining the inside of the apparatus with teflon (registered trademark) or the like while suppressing contamination as much as possible.
In addition to the filter filtration, impurities can be removed by the adsorbent material, and the filter filtration and the adsorbent material can be used in combination. As the adsorbent, a known adsorbent can be used, and for example, inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon can be used. In order to reduce impurities such as metals contained in the above-mentioned various materials, it is necessary to prevent the mixing of metal impurities in the manufacturing process. It is possible to confirm whether or not the metal impurities are sufficiently removed from the manufacturing apparatus by measuring the content of the metal component contained in the cleaning liquid used when cleaning the manufacturing apparatus. The content of the metal component contained in the used cleaning liquid is preferably 100 mass ppt (parts per trillion) or less, more preferably 10 mass ppt or less, and still more preferably 1 mass ppt or less.
In order to prevent failures of chemical liquid piping and various components (filters, O-rings, hoses, etc.) caused by electrostatic discharge accompanied by electrification of static electricity, the organic treatment liquid such as a rinse liquid may be added with a conductive compound. The conductive compound is not particularly limited, and examples thereof include methanol. The amount to be added is not particularly limited, but is preferably 10% by mass or less, more preferably 5% by mass or less, from the viewpoint of maintaining preferable development characteristics or rinsing characteristics.
As the chemical liquid piping, various piping coated with SUS (stainless steel) or polyethylene, polypropylene, or fluororesin (polytetrafluoroethylene, perfluoroalkoxy resin, or the like) subjected to antistatic treatment can be used, for example. Similarly, as for the filter and the O-ring, polyethylene, polypropylene, or a fluororesin (polytetrafluoroethylene, perfluoroalkoxy resin, or the like) subjected to antistatic treatment can be used.
[ method of manufacturing electronic device ]
The present invention also relates to a method for manufacturing an electronic device including the above-described pattern forming method (preferably, a positive pattern forming method), and an electronic device manufactured by the manufacturing method.
The electronic device of the present invention is an electronic device suitably mounted on an electric and electronic apparatus (home appliance, OA (Office Automation, office automation), media-related apparatus, optical apparatus, communication apparatus, or the like).
Examples
The present invention will be described in further detail with reference to examples. The materials, amounts of use, proportions, processing contents, processing steps, and the like shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Accordingly, the scope of the present invention should not be construed as being limited by the examples shown below.
[ various ingredients of actinic ray-sensitive or radiation-sensitive resin composition (resist composition) ]
The components contained in the resist composition for test in the examples are explained below.
[ resin ]
The types of repeating units and the molar ratios thereof, the weight average molecular weight (Mw) of the resin, and the dispersity (Pd (Mw/Mn)) of the resin, which are used for preparing the resist composition, are shown below.
The resins shown in the following tables were synthesized by the method for synthesizing the resin A-1 (Synthesis example 1) described below.
[ chemical formula 76]
[ chemical formula 77]
[ chemical formula 78]
[ chemical formula 79]
[ chemical formula 80]
[ chemical formula 81]
[ chemical formula 82]
[ chemical formula 83]
Synthesis example 1: synthesis of resin A-1
Cyclohexanone (70 g) was heated to 85 ℃ under a nitrogen stream. A mixed solution of a monomer represented by the following formula M-1 (28.8 g), a monomer represented by the following formula M-2 (55.7 g), a monomer represented by the following formula M-3 (23.7 g), cyclohexanone (130 g) and dimethyl 2,2' -azobisisobutyrate [ V-601,FUJIFILM Wako Pure Chemical Corporation ] (6.0 g) was added dropwise over 3 hours while stirring the solution, to obtain a reaction solution. After the completion of the dropwise addition, the reaction solution was further stirred at 85℃for 3 hours. The obtained reaction solution was naturally cooled, reprecipitated with 5000g of ethyl acetate/heptane (mass ratio 1:9), and then filtered, and the obtained solid was dried in vacuo to obtain resin A-1 (86 g). Wherein all the above work is performed under a yellow lamp.
[ chemical formula 84]
[ additive ]
The structure of an additive (photoacid generator or acid diffusion control agent) used for preparing the resist composition is shown below.
Hereinafter, B-1 to B-6 correspond to photoacid generators. In addition, B-1 to B-6 do not correspond to the acid diffusion controlling agent.
D-1, D-4 and D-6 to D-8 correspond to an acid diffusion controlling agent (photodegradable alkali compound) which also serves as a photoacid generator.
D-2, D-3 and D-5 correspond to the acid diffusion controlling agent other than the photodegradable alkali compound.
[ chemical formula 85]
[ chemical formula 86]
[ surfactant ]
The surfactant used for preparing the resist composition is shown below.
W-1: megafaceF176 (Dainippon Ink and Chemicals, inc.; fluorine series)
W-2: megafaceR08 (Dainippon Ink and Chemicals, inc.; fluorine and silicon series)
W-3: polysiloxane polymer KP-341 (Shin-Etsu Chemical Co., ltd.; silicon series)
W-4: troysol S-366 (Troy Chemical Industries system)
W-5: KH-20 (AGC SEIMI CHEMICAL CO., LTD.)
W-6: polyFox PF-6320 (OMNOVA So ] programs, fluorine series)
[ solvent ]
The solvents used for preparing the resist composition are shown below.
SL-1: propylene Glycol Monomethyl Ether Acetate (PGMEA)
SL-2: propylene glycol monomethyl ether propionate
SL-3: 2-heptanone
SL-4: lactic acid ethyl ester
SL-5: propylene Glycol Monomethyl Ether (PGME)
SL-6: cyclohexanone
SL-7: gamma-butyrolactone
SL-8: propylene carbonate
[ preparation of resist composition ]
The respective components (resin, photoacid generator, basic compound, surfactant) of the types and amounts shown in table 1 shown in the latter stage were dissolved in the solvents shown in table 1, and the obtained solutions were filtered with a polyethylene filter having a pore size of 0.02 μm, to obtain resist compositions of respective examples or comparative examples.
The amount of the solvent in which each component was dissolved was adjusted so that the solid content concentration of the finally obtained resist composition became 3.0 mass%.
The solid component means all components except the solvent.
[ test ]
[ production of resist film ]
The resist compositions of the examples or comparative examples were applied to 6-inch Si (silicon) wafers subjected to Hexamethyldisilazane (HMDS) treatment in advance using a Tokyo electron ltd. Spin coater Mark8, and dried on a hot plate at 130 ℃ for 300 seconds, thereby obtaining resist films having film thicknesses of 100 nm.
Here, 1 inch is 0.0254m.
[ EB (Electron Beam) exposure test ]
The wafer provided with the resist film obtained by the above method was subjected to pattern irradiation using an electron beam drawing apparatus (manufactured by ADVANTEST CORPORATION; F7000S, acceleration voltage 50 KeV). At this time, the drawing is performed so as to form a line width and a pitch of line width/pitch=1/1. After electron beam lithography (pattern irradiation), the wafer was heated on a hot plate at 100 ℃ for 60 seconds, and immersed in a 2.38 mass% aqueous solution of tetramethylammonium hydroxide (TMAH) for 60 seconds. The wafer was then rinsed with water for 30 seconds. Then, the wafer was rotated at 4000rpm for 30 seconds, and then baked at 95℃for 60 seconds and dried.
< evaluation of LWR >
Line width and space patterns (line width/space=1/1) with a line width of 50nm, which were discriminated by the method shown in the above-mentioned EB (electron beam exposure test), were observed from the upper part of the pattern using a length-measuring scanning electron microscope (SEM (Hitachi, ltd. System S-9380 II)). The line width of the pattern was observed at an arbitrary point (160 points), and 3σ (nm) of the measured deviation was evaluated as a value of LWR. The smaller the value, the better the performance.
The exposure amount of the electron beam for forming the pattern is set to be an optimum irradiation amount for reproducing the irradiated pattern.
Evaluation of EL (Exposure latitude)
The specimen obtained by the above-mentioned [ EB (electron beam) exposure test ] was observed by a length-measuring scanning electron microscope (Hitachi, ltd. Co., ltd., S-9380 II)The line width and pitch pattern were resolved by the method, and the exposure amount at the time of reproducing the irradiated pattern (line width and pitch pattern with line width of 50nm (line width/pitch=1/1)) was confirmed, and the exposure amount was taken as the optimum exposure amount (E opt )(mJ/cm 2 ). To obtain the optimal exposure (E opt ) The exposure amounts at which the target values of 50 nm.+ -. 10% (i.e., 45nm and 55 nm) were reached were then determined based on the above values. Then, the exposure latitude (EL, unit:%) defined by the following formula was calculated. The larger the value of EL, the smaller the performance change due to the variation in exposure amount, the better.
Exposure latitude (%): "|E opt Exposure |E at a line width of 45nm for the pattern opt X 100' and "|E opt Exposure |E at a line width of 55nm for the pattern opt Smaller values in x 100'
< evaluation of collapse margin (Pattern collapse suppression Property) >)
Regarding the line width and pitch pattern resolved by the method shown in the above [ EB (electron beam) exposure test ], the exposure amount of the pattern having a resolution pitch of 150nm and line width/pitch=1/1 was set to E0. When the exposure amount is increased from the exposure amount E0, the pitch width (unit: nm) at which the line width pattern starts to collapse is used as an index of "collapse margin (pattern collapse suppressing ability)". The larger the above value, the better the performance.
EUV (extreme ultraviolet) exposure test
A wafer provided with a resist film obtained by the above method was subjected to pattern exposure using an EUV exposure apparatus (ex company Micro Exposure Tool, NA (aperture number) 0.3, quadrupole, outer sigma 0.68, inner sigma 0.36) and using an exposure mask (line width/pitch=1/1).
After exposure, the wafer was heated on a hot plate at 100℃for 90 seconds, and immersed in a 2.38 mass% aqueous solution of tetramethylammonium hydroxide (TMAH) for 60 seconds. The wafer was then rinsed with water for 30 seconds. Then, the wafer was rotated at 4000rpm for 30 seconds, and then baked at 95℃for 60 seconds and dried.
< evaluation of LWR >
Line width and pitch patterns (line width/gap=1/1) with a line width of 50nm resolved by the above method were observed from the upper part of the pattern using a length-measuring scanning electron microscope (SEM (Hitachi, ltd. S-9380 II)). The line width of the pattern was observed at an arbitrary point (160 points), and 3σ (nm) of the measured deviation was evaluated as a value of LWR. The smaller the value, the better the performance.
(results)
The following table shows the formulation of the resist compositions of each example or comparative example, and the characteristics and evaluation results thereof.
In the table, the column "amount (g)" indicates the amount (g) of each solid component (resin, additive, surfactant) added.
The column "mass ratio" with respect to the solvents indicates the mixing ratio (mass ratio) of the respective solvents.
The column "molecular weight after detachment of the repeating unit (a)" indicates the molecular weight of the repeating unit obtained by substituting the detachment group of the repeating unit (a) in each resin with a hydrogen atom.
The column "acid generation amount (mmol/g)" indicates the total molar amount of the repeating unit (a) and photoacid generator relative to the total solid content of each resist composition.
TABLE 1
From the results shown in the table, it was confirmed that the resist composition of the present invention was able to reduce LWR of the formed pattern, and also was excellent in exposure latitude and pattern collapse inhibition of the formed pattern.
In addition, even if the substrate on which the resist film is formed is changed from the Si wafer to the chromium substrate, the same result can be obtained.
It was confirmed that the more the number of the repeating units (a) and the photoacid generator was, the more the LWR of the formed pattern was able to be reduced, and the more excellent the exposure latitude was, that is, "the total molar amount of the repeating units (a) and the photoacid generator was 0.70mmol/g or more with respect to the total solid content of the resist composition", "the total molar amount of the repeating units (a) and the photoacid generator was 1.00mmol/g or more with respect to the total solid content of the resist composition", "the molecular weight of the repeating units obtained by substituting the releasing group of the repeating units (a) in the resin with a hydrogen atom was 200 or less", and "the photoacid generator contained a photodegradable alkali compound".
Further, it was confirmed that when the resin (a) contains a repeating unit having an aromatic hydroxyl group (preferably, a repeating unit represented by the formula (A2)), pattern collapse at the time of pattern formation can be further suppressed.
In addition, a resist composition was prepared in the same manner as in example 6 except that the resin A-6 used in the resist composition was changed to a mixture of A-6 and A-10 in terms of weight. The same test results as in example 6 were obtained using this resist composition, and the same evaluation as in example 6 was performed, and the same results as in example 6 were obtained.
In example 6, a resist composition was prepared in the same manner except that B-5 used in the resist composition was changed to a mixture of B-5 and B-2 in terms of weight. The same evaluation as in example 6 was performed, and the same result as in example 6 was obtained.
In example 6, a resist composition was prepared in the same manner except that D-4 used in the resist composition was changed to a mixture of D-4 and D-8 in terms of weight. The same test results as in example 6 were obtained using this resist composition, and the same evaluation as in example 6 was performed, and the same results as in example 6 were obtained.

Claims (17)

1. A actinic-ray-or radiation-sensitive resin composition comprising a resin (A) having a repeating unit (a),
the repeating unit (a) has an ionic group which generates an acid by releasing a releasing group by irradiation with actinic rays or radioactive rays, and the molecular weight of the repeating unit obtained by substituting the releasing group with a hydrogen atom is 300 or less,
when the actinic-ray-or radiation-sensitive resin composition does not contain a compound that generates an acid upon irradiation with actinic rays or radiation, the molar amount of the repeating unit (a) is 0.50mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition,
When the actinic-ray-or radiation-sensitive resin composition contains a compound that generates an acid upon irradiation with actinic rays or radiation, the total molar amount of the repeating unit (a) and the compound is 0.50 mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition.
2. The actinic-ray-or radiation-sensitive resin composition according to claim 1, wherein,
the molecular weight of the repeating unit (a) obtained by substituting the release group with a hydrogen atom is 200 or less.
3. The actinic-ray-or radiation-sensitive resin composition according to claim 1 or 2, which comprises the compound which is a low-molecular compound.
4. The actinic-ray-or radiation-sensitive resin composition according to claim 3, wherein,
the compound is an ionic compound.
5. The actinic-ray-or radiation-sensitive resin composition according to any one of claim 1 to 4, wherein,
the repeating unit (a) is a repeating unit represented by the general formula (1),
in the general formula (1), A represents a group constituting a main chain of the resin,
l represents a single bond or a 2-valent linking group,
Z + Representing an organic cation.
6. The actinic-ray-or radiation-sensitive resin composition according to claim 5, wherein,
a is a group consisting of only atoms selected from the group consisting of hydrogen atoms and carbon atoms,
l is a single bond or a group consisting of only atoms selected from the group consisting of hydrogen atoms and carbon atoms.
7. The actinic-ray-or radiation-sensitive resin composition according to any one of claim 1 to 6, wherein,
the resin (a) is a resin having improved solubility in an alkaline developer by the action of an acid.
8. The actinic-ray-or radiation-sensitive resin composition according to any one of claim 1 to 7, wherein,
the resin (A) has a repeating unit represented by the general formula (A2),
in the general formula (A2), R 101 、R 102 R is R 103 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group,
L A represents a single bond or a 2-valent linking group,
Ar A represents an aromatic ring group, and is preferably a cyclic group,
k represents an integer of 1 to 5,
wherein R is 102 Optionally with Ar A Bonding, R at this time 102 Represents a single bond or an alkylene group.
9. The actinic-ray-or radiation-sensitive resin composition according to any one of claim 1 to 8, wherein,
the resin (A) contains a repeating unit having an acid-decomposable group,
The repeating unit having an acid-decomposable group is decomposed by the action of an acid to produce 1 or more groups selected from a carboxyl group and an aromatic hydroxyl group.
10. The actinic-ray-or radiation-sensitive resin composition according to claim 9, wherein,
the repeating unit having an acid-decomposable group is a repeating unit represented by any one of the general formulae (3) to (7),
in the general formula (3), R 5 ～R 7 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group,
L 2 represents a single bond or a 2-valent linking group,
R 8 ～R 10 each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group, and R 8 ～R 10 Optionally bonded to each other to form a ring,
in the general formula (4), R 11 ～R 14 Each independently represents a hydrogen atom or an organic group, wherein R 11 R is R 12 Represents an organic group,
X 1 represents-CO-, -SO-or-SO 2 -，
Y 1 represents-O-, -S-, -SO-, -SO 2 -or-NR 34 -，R 34 Represents a hydrogen atom or an organic group,
L 3 represents a single bond or a 2-valent linking group,
R 15 ～R 17 each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group, and R 15 ～R 17 Optionally bonded to each other to form a ring,
in the general formula (5), R 18 R is R 19 Respectively independent earth's surface A hydrogen atom or an organic group is shown,
R 20 r is R 21 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group, and R 20 And R is R 21 Optionally bonded to each other to form a ring,
in the general formula (6), R 22 ～R 24 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group,
L 4 represents a single bond or a 2-valent linking group,
Ar 1 represents an aromatic ring group, and is preferably a cyclic group,
R 25 ～R 27 each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group,
in addition, R 26 And R is R 27 Optionally bonded to each other to form a ring,
and R is 24 Or R is 25 Optionally with Ar 1 The bonding is performed such that,
in the general formula (7), R 28 ～R 30 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group,
L 5 represents a single bond or a 2-valent linking group,
R 31 r is R 32 Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group,
R 33 represents alkyl, cycloalkyl, aryl, aralkyl or alkenyl, in addition R 32 And R is R 33 Optionally bonded to each other to form a ring.
11. The actinic-ray-or radiation-sensitive resin composition according to claim 10, wherein,
the repeating unit having an acid-decomposable group is a repeating unit represented by any one of the general formulae (6) to (7).
12. The actinic-ray-or radiation-sensitive resin composition according to any one of claim 1 to 11, wherein,
when the actinic-ray-or radiation-sensitive resin composition does not contain a compound that generates an acid upon irradiation with actinic rays or radiation, the molar amount of the repeating unit (a) is 0.70mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition,
when the actinic-ray-or radiation-sensitive resin composition contains a compound that generates an acid upon irradiation with actinic rays or radiation, the total molar amount of the repeating unit (a) and the compound is 0.70mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition.
13. The actinic-ray-or radiation-sensitive resin composition according to any one of claim 1 to 12, wherein,
when the actinic-ray-or radiation-sensitive resin composition does not contain a compound that generates an acid upon irradiation with actinic rays or radiation, the molar amount of the repeating unit (a) is 1.00mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition,
When the actinic-ray-or radiation-sensitive resin composition contains a compound that generates an acid upon irradiation with actinic rays or radiation, the total molar amount of the repeating unit (a) and the compound is 1.00mmol/g or more relative to the total solid content of the actinic-ray-or radiation-sensitive resin composition.
14. The actinic-ray-or radiation-sensitive resin composition according to any one of claim 1 to 13, wherein,
the actinic-ray-or radiation-sensitive resin composition contains the compound,
the compound comprises a photodegradable base compound.
15. A resist film formed using the actinic-ray-or radiation-sensitive resin composition according to any one of claims 1 to 14.
16. A pattern forming method, comprising:
a step of forming a resist film on a substrate using the actinic-ray-sensitive or radiation-sensitive resin composition according to any one of claims 1 to 14;
exposing the resist film; a kind of electronic device with high-pressure air-conditioning system
And developing the exposed resist film with a developer.
17. A manufacturing method of an electronic device, comprising the pattern forming method of claim 16.
CN202280014601.0A 2021-02-12 2022-01-17 Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device Pending CN116897320A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021-020698 2021-02-12
JP2021-023223 2021-02-17
JP2021023223 2021-02-17
PCT/JP2022/001257 WO2022172689A1 (en) 2021-02-12 2022-01-17 Active ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and electronic device manufacturing method

Publications (1)

Publication Number Publication Date
CN116897320A true CN116897320A (en) 2023-10-17

Family

ID=88311169

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280014601.0A Pending CN116897320A (en) 2021-02-12 2022-01-17 Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

Country Status (1)

Country Link
CN (1) CN116897320A (en)

Similar Documents

Publication Publication Date Title
JP7232847B2 (en) Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
JP7176010B2 (en) Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
JP7200267B2 (en) Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
JP7318129B2 (en) Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
JP7454669B2 (en) Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
CN115997167A (en) Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, method for producing electronic device, and compound
WO2022172689A1 (en) Active ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and electronic device manufacturing method
CN117063122A (en) Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device
WO2023145564A1 (en) Active light–sensitive or radiation-sensitive resin composition, active light–sensitive or radiation-sensitive film, pattern formation method, and production method for electronic device
WO2023145488A1 (en) Active light sensitive or radiation sensitive resin composition, resist film, method for forming pattern, and method for producing electronic device
JP7434592B2 (en) Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, electronic device manufacturing method
CN116830041A (en) Actinic-ray-or radiation-sensitive resin composition, resist film, positive pattern forming method, and method for manufacturing electronic device
WO2023032794A1 (en) Actinic ray sensitive or radiation sensitive resin composition, actinic ray sensitive or radiation sensitive film, pattern forming method, electronic device manufacturing method, and compound
WO2022024929A1 (en) Active light sensitive or radiation sensitive resin composition, resist film, pattern forming method, and method for producing electronic device
CN116897320A (en) Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device
WO2024024669A1 (en) Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, and electronic device manufacturing method
CN116848460A (en) Actinic-ray-or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device
WO2023140191A1 (en) Active-ray-sensitive or radiation-sensitive resin composition, active-ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method
WO2023218970A1 (en) Active-ray-sensitive or radiation-sensitive resin composition, active-ray-sensitive or radiation-sensitive film, pattern formation method, and method for manufacturing electronic device
WO2023243521A1 (en) Actinic light-sensitive or radiation-sensitive resin composition, actinic light-sensitive or radiation-sensitive film, method for forming pattern, and method for producing electronic device
JP2023035836A (en) Method for producing active-ray- or radiation-sensitive resin composition, pattern formation method, method for manufacturing electronic device, and method for manufacturing onium salt
KR20230158012A (en) Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, electronic device manufacturing method
WO2023008127A1 (en) Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method and electronic device manufacturing method
WO2023047992A1 (en) Active light-sensitive or radiation-sensitive resin composition, active light-sensitive or radiation-sensitive film, pattern forming method, and method for producing electronic device
WO2022024928A1 (en) Actinic-ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and method for producing electronic device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination