CN116895592A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
- Publication number
- CN116895592A CN116895592A CN202310302697.7A CN202310302697A CN116895592A CN 116895592 A CN116895592 A CN 116895592A CN 202310302697 A CN202310302697 A CN 202310302697A CN 116895592 A CN116895592 A CN 116895592A
- Authority
- CN
- China
- Prior art keywords
- power supply
- region
- heater element
- heater
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 160
- 239000000919 ceramic Substances 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 238000012545 processing Methods 0.000 claims abstract description 80
- 239000002826 coolant Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000005452 bending Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 188
- 239000000463 material Substances 0.000 description 31
- 230000007423 decrease Effects 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 101100195396 Human cytomegalovirus (strain Merlin) RL11 gene Proteins 0.000 description 7
- 101100249083 Human cytomegalovirus (strain Merlin) RL12 gene Proteins 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 101710082414 50S ribosomal protein L12, chloroplastic Proteins 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 101100141719 Human cytomegalovirus (strain Merlin) RL13 gene Proteins 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 4
- 101710087140 50S ribosomal protein L22, chloroplastic Proteins 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910039444 MoC Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910001026 inconel Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 101710114762 50S ribosomal protein L11, chloroplastic Proteins 0.000 description 2
- 101710164994 50S ribosomal protein L13, chloroplastic Proteins 0.000 description 2
- 101710156159 50S ribosomal protein L21, chloroplastic Proteins 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Abstract
The invention provides an electrostatic chuck which can inhibit temperature control from becoming complex and can improve uniformity of in-plane temperature distribution of a processing object. The electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a heater unit, the heater unit includes a 1 st and a 2 nd heater elements, the 1 st heater element includes a plurality of zones including a 1 st zone, the 1 st zone includes a 1 st heater wire and a 1 st and a 2 nd power supply portions, the 1 st heater wire includes a 1 st extension portion provided with a 1 st protruding portion and a 2 nd extension portion provided with a 2 nd protruding portion, the 1 st zone includes a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged, the 2 nd heater element includes a plurality of zones including a 2 nd zone, the 2 nd zone includes a 2 nd heater wire and a 3 rd and a 4 th power supply portion, the 2 nd zone includes a central region and an outer peripheral region, and the 1 st opposing region is provided at a position overlapping the central region.
Description
Technical Field
Aspects of the present invention generally relate to an electrostatic chuck.
Background
In a plasma processing chamber for performing etching, CVD (Chemical Vapor Deposition), sputtering (sputtering), ion implantation, ashing, and the like, an electrostatic chuck is used as a means for adsorbing and holding a processing object such as a semiconductor wafer or a glass substrate. The electrostatic chuck is a device that applies electrostatic attraction power to an electrode provided therein and attracts a substrate such as a silicon wafer by electrostatic force.
In recent years, miniaturization and improvement in processing speed have been demanded for IC chips including semiconductor elements such as transistors. Accordingly, when forming a semiconductor element on a wafer, improvement in processing accuracy such as etching is required. The processing accuracy of etching means whether or not a pattern having a width and a depth in accordance with a design can be formed by processing a wafer. By improving the processing accuracy such as etching, the semiconductor element can be miniaturized, and the integration density can be improved. That is, by improving the processing accuracy, the chip can be miniaturized and speeded up.
It is known that the processing accuracy of etching and the like depends on the wafer temperature at the time of processing. In order to make the etching degree uniform, a substrate processing apparatus having an electrostatic chuck is required to control the temperature distribution in the wafer surface during processing. As a method of controlling the temperature distribution in the wafer surface, a method using an electrostatic chuck having a heater (heating element) incorporated therein is known.
In particular, in recent years, along with miniaturization of semiconductor devices, it has been demanded to control the in-plane temperature distribution strictly by more rapid heating, and as a means for achieving this, a technique of making a heater in a 2-layer structure of a main heater and an auxiliary heater has been known. In addition, a heater pattern is also known in the case of constituting a heater by a plurality of regions.
Disclosure of Invention
However, if a plurality of zones are provided for the heater, there is a new problem in that temperature control is performed carefully, design restrictions are generated on the shape of the heater pattern, or the number of pads, terminals, or the like for power supply increases, so that a plurality of cold spots having a relatively low temperature or hot spots having a relatively high temperature are generated in the surface of the heater, and uniformity of temperature distribution in the wafer surface is lowered.
Then, for example, a method of dispersing cold spots or hot spots in the surface of the heater to thereby improve uniformity of temperature distribution in the wafer surface can be considered. However, if cold spots or hot spots are dispersed in the surface of the heater, temperature control may become complicated. It is required to suppress the temperature control from becoming complicated and to improve the uniformity of the temperature distribution in the wafer plane.
Drawings
Fig. 1 is a perspective view schematically showing an electrostatic chuck according to an embodiment.
Fig. 2 (a) and 2 (b) are cross-sectional views schematically showing a part of an electrostatic chuck according to an embodiment.
Fig. 3 is an exploded perspective view schematically showing a heater section according to the embodiment.
Fig. 4 is an exploded cross-sectional view schematically showing a heater section according to the embodiment.
Fig. 5 is a plan view schematically showing a main region of a main heater element according to an embodiment.
Fig. 6 is a plan view schematically showing an auxiliary area of an auxiliary heater element according to the embodiment.
Fig. 7 is a plan view schematically showing the positional relationship between the main region of the main heater element and the auxiliary region of the auxiliary heater element according to the embodiment.
Fig. 8 is a plan view schematically showing a part of the 1 st zone of the heater unit according to the embodiment.
Fig. 9 is a plan view schematically showing a part of the 1 st zone of the heater section according to a modification of the embodiment.
Fig. 10 is a plan view schematically showing a part of the 1 st zone of the heater section according to a modification of the embodiment.
Fig. 11 is a plan view schematically showing a part of the 1 st zone of the heater section according to a modification of the embodiment.
Fig. 12 is a plan view schematically showing a part of the 1 st zone of the heater section according to a modification of the embodiment.
Fig. 13 is a plan view schematically showing the positional relationship between a part of zone 1 and zone 2 of the heater unit according to embodiment 1.
Fig. 14 is a plan view schematically showing the positional relationship between a part of zone 1 and zone 2 of the heater unit according to embodiment 1.
Fig. 15 is a plan view schematically showing a 1 st region of the heater unit according to embodiment 2.
Fig. 16 is a plan view schematically showing a 1 st region of a heater unit according to embodiment 3.
Fig. 17 is a plan view schematically showing a 1 st region of a heater unit according to embodiment 4.
Fig. 18 is a plan view schematically showing a 1 st region of the heater unit according to embodiment 5.
Detailed Description
The 1 st invention is an electrostatic chuck, comprising: a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface; a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate; and a heater unit configured to heat the ceramic dielectric substrate, wherein the heater unit includes a 1 st heater element and a 2 nd heater element, the 1 st heater element is disposed between the 1 st main surface and the upper surface, the 2 nd heater element is disposed between the 1 st main surface and the 1 st heater element or between the 1 st heater element and the upper surface, the 1 st heater element includes a plurality of regions, the plurality of regions of the 1 st heater element include a 1 st region, and the 1 st region includes: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire, wherein the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided in the plurality of extending portions protruding in the 2 nd direction, the plurality of extending portions having a 1 st extending portion and a 2 nd extending portion, the plurality of protruding portions having: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protrusion provided in the 2 nd extension, the 1 st protrusion protruding toward the 2 nd protrusion, the 2 nd protrusion protruding toward the 1 st protrusion, the 1 st region having a 1 st opposing region in which the 1 st protrusion and the 2 nd protrusion are adjacently and oppositely arranged, the 2 nd heater element having a plurality of regions, the plurality of regions of the 2 nd heater element having a 2 nd region, the 2 nd region having: a 2 nd heater wire which generates heat by the flow of current; and a 3 rd power supply unit and a 4 th power supply unit for supplying power to the 2 nd heater wire, wherein the 2 nd zone has: a central region located at the center of the 2 nd region when viewed in a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region, wherein the 1 st opposing region is provided at a position overlapping the central region in the Z direction.
If the number of zones of the heater section is increased in order to improve the uniformity of the in-plane temperature distribution of the object to be processed, the number of power feeding sections and the like for feeding power to each zone is increased. If the number of power feeding portions and the like increases, the number of protruding portions provided to the heater wire so as to avoid the power feeding portions and the like also increases. In general, since the current flows through the shortest distance, when the current flows in the protruding portion of the heater wire, the current flows more easily in the inside of the protruding portion than in the outside of the protruding portion. This makes it easier for the amount of heat generated to be reduced on the outside of the protruding portion than on the inside of the protruding portion. That is, the protruding portion easily becomes a cold spot. In order to improve the uniformity of the in-plane temperature distribution of the heater portion, for example, it is conceivable to dispose the protruding portion in a dispersed manner in the plane of the heater portion. However, if the protruding portions are disposed in a dispersed manner in the surface of the heater portion, there is a possibility that the cold spots are dispersed and the temperature control becomes complicated. On the other hand, if the protruding portions are arranged in a concentrated manner in the surface of the heater portion, there is a possibility that the temperature at the cold spot further decreases and the uniformity of the in-plane temperature distribution of the heater portion decreases. In contrast, according to this electrostatic chuck, the 1 st opposing region of the 1 st region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged (i.e., the protruding portions are concentrated) is provided at a position overlapping with the central region in which the temperature in the 2 nd region is more likely to be higher than that in the outer peripheral region. This suppresses the occurrence of scattering of the cold spots, and also causes the 1 st opposing region of the 1 st region, which is the cold spot, to overlap the center region of the 2 nd region, which is the hot spot, thereby suppressing a significant decrease in temperature at the cold spots. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
The 2 nd invention is an electrostatic chuck, comprising: a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface; a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate; and a heater unit configured to heat the ceramic dielectric substrate, wherein the heater unit has a 1 st heater element, the 1 st heater element is provided between the 1 st main surface and the upper surface, the 1 st heater element has a plurality of regions, the plurality of regions of the 1 st heater element have a 1 st region, and the 1 st region has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire, wherein the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided in the plurality of extending portions protruding in the 2 nd direction, the plurality of extending portions having a 1 st extending portion and a 2 nd extending portion, the plurality of protruding portions having: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding portion provided in the 2 nd extending portion, the 1 st protruding portion protruding toward the 2 nd protruding portion, the 2 nd protruding portion protruding toward the 1 st protruding portion, the 1 st region having a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged, the 1 st region having: a central region located at the center of the 1 st region when viewed along a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region, the 1 st opposing region being provided in the central region.
If the number of zones of the heater section is increased in order to improve the uniformity of the in-plane temperature distribution of the object to be processed, the number of power feeding sections and the like for feeding power to each zone is increased. If the number of power feeding portions and the like increases, the number of protruding portions provided to the heater wire so as to avoid the power feeding portions and the like also increases. In general, since the current flows through the shortest distance, when the current flows in the protruding portion of the heater wire, the current flows more easily in the inside of the protruding portion than in the outside of the protruding portion. This makes it easier for the amount of heat generated to be reduced on the outside of the protruding portion than on the inside of the protruding portion. That is, the protruding portion easily becomes a cold spot. In order to improve the uniformity of the in-plane temperature distribution of the heater portion, for example, it is conceivable to dispose the protruding portion in a dispersed manner in the plane of the heater portion. However, if the protruding portions are disposed in a dispersed manner in the surface of the heater portion, there is a possibility that the cold spots are dispersed and the temperature control becomes complicated. On the other hand, if the protruding portions are arranged in a concentrated manner in the surface of the heater portion, there is a possibility that the temperature at the cold spot further decreases and the uniformity of the in-plane temperature distribution of the heater portion decreases. In contrast, according to this electrostatic chuck, the 1 st opposing region of the 1 st region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged (i.e., the protruding portions are concentrated) is provided in the central region in which the temperature in the 1 st region is more likely to be higher than in the outer peripheral region. This suppresses the occurrence of scattering of the cold spots, and the 1 st opposing region of the 1 st region, which is the cold spot, is provided in the center region of the 1 st region, which is the hot spot, whereby a significant decrease in temperature at the cold spots can be suppressed. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
The 3 rd invention is an electrostatic chuck comprising: a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface; a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate; and a heater unit configured to heat the ceramic dielectric substrate, wherein the heater unit has a 1 st heater element, the 1 st heater element is provided between the 1 st main surface and the upper surface, the 1 st heater element has a plurality of regions divided in a radial direction, the plurality of regions of the 1 st heater element have a 1 st region, and the 1 st region has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire, wherein the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided in the plurality of extending portions protruding in the 2 nd direction, the plurality of extending portions having a 1 st extending portion and a 2 nd extending portion, the plurality of protruding portions having: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protrusion provided at the 2 nd extension, the 1 st protrusion protruding toward the 2 nd protrusion, the 2 nd protrusion protruding toward the 1 st protrusion, the 1 st region having a 1 st opposing region where the 1 st protrusion and the 2 nd protrusion are adjacently and oppositely arranged, the 1 st region including an outer peripheral edge of the 1 st heater element, the 1 st region having: an inner peripheral portion located radially inward of a radial center line bisecting the 1 st region in a radial direction; and an outer peripheral portion located radially outward of the radial center line and including the outer peripheral edge, wherein the 1 st opposing region is provided in the inner peripheral portion.
If the number of zones of the heater section is increased in order to improve the uniformity of the in-plane temperature distribution of the object to be processed, the number of power feeding sections and the like for feeding power to each zone is increased. If the number of power feeding portions and the like increases, the number of protruding portions provided to the heater wire so as to avoid the power feeding portions and the like also increases. In general, since the current flows through the shortest distance, when the current flows in the protruding portion of the heater wire, the current flows more easily in the inside of the protruding portion than in the outside of the protruding portion. This makes it easier for the amount of heat generated to be reduced on the outside of the protruding portion than on the inside of the protruding portion. That is, the protruding portion easily becomes a cold spot. In order to improve the uniformity of the in-plane temperature distribution of the heater portion, for example, it is conceivable to dispose the protruding portion in a dispersed manner in the plane of the heater portion. However, if the protruding portions are disposed in a dispersed manner in the surface of the heater portion, there is a possibility that the cold spots are dispersed and the temperature control becomes complicated. On the other hand, if the protruding portions are arranged in a concentrated manner in the surface of the heater portion, there is a possibility that the temperature at the cold spot further decreases and the uniformity of the in-plane temperature distribution of the heater portion decreases. In addition, the temperature of the outermost peripheral portion of the object to be processed is more likely to be lower than that of the inner portion. In contrast, according to this electrostatic chuck, when the 1 st region includes the outer peripheral edge of the 1 st heater element (i.e., in the 1 st region located at the outermost peripheral portion of the 1 st heater element), the 1 st opposing region of the 1 st protruding portion and the 1 st region of the 2 nd protruding portion are disposed adjacently and oppositely (i.e., the protruding portions are concentrated), and an inner peripheral portion in the 1 st region where the temperature is more likely to become higher than the outer peripheral portion is provided. This suppresses the occurrence of scattering of the cold spots, and the 1 st opposing region of the 1 st region, which is the cold spot, is provided on the inner peripheral portion of the 1 st region, which is the hot spot, whereby a significant decrease in temperature at the cold spots can be suppressed. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
The 4 th aspect of the present invention is the electrostatic chuck according to any one of the 1 st to 3 rd aspects of the present invention, wherein the plurality of zones of the 1 st heater element are divided in a radial direction, and the 1 st direction is a circumferential direction.
According to this electrostatic chuck, the in-plane temperature of the processing object can be efficiently controlled.
The 5 th aspect of the present invention is the electrostatic chuck according to any one of the 1 st to 3 rd aspects of the present invention, wherein the plurality of zones of the 1 st heater element are divided in a radial direction, and the 1 st direction is a radial direction.
According to this electrostatic chuck, the in-plane temperature of the processing object can be efficiently controlled.
The 6 th invention is the electrostatic chuck according to any one of the 1 st to 3 rd inventions, wherein the plurality of extensions further includes a 3 rd extension portion located between the 1 st extension portion and the 2 nd extension portion in the 2 nd direction, and the 3 rd extension portion is provided at a position not overlapping the 1 st and 2 nd protruding portions in the 2 nd direction.
The 1 st projection and the 2 nd projection are disposed adjacently and oppositely. Therefore, the shortest distance between the 1 st extension portion and the 2 nd extension portion may be larger than the shortest distance when the 1 st projection portion and the 2 nd projection portion are not formed.
According to this electrostatic chuck, the 3 rd extending portion is disposed between the 1 st extending portion and the 2 nd extending portion at a position where the 3 rd extending portion does not overlap with the 1 st protruding portion and the 2 nd protruding portion, and therefore the range of the 1 st opposing region can be made small. Thus, uniformity of the in-plane temperature distribution of the processing object can be improved.
The 7 th aspect of the present invention is the electrostatic chuck according to any one of the 1 st to 3 rd aspects of the present invention, wherein the plurality of protruding portions further includes a 3 rd protruding portion provided in the 1 st extending portion and protruding toward the 2 nd protruding portion, and the 3 rd protruding portion is disposed adjacent to and facing the 2 nd protruding portion.
According to this electrostatic chuck, the region (the 2 nd opposing region) in which the 2 nd protruding portion and the 3 rd protruding portion are concentrated is disposed in the vicinity of the 1 st opposing region, and the number of cold spots in the entire surface can be reduced. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
An 8 th aspect of the present invention is an electrostatic chuck comprising: a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface; a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate; and a heater unit configured to heat the ceramic dielectric substrate, wherein the heater unit has a 1 st heater element, the 1 st heater element is provided between the 1 st main surface and the upper surface, the 1 st heater element has a plurality of regions, the plurality of regions of the 1 st heater element have a 1 st region, and the 1 st region has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire, wherein the 1 st heater wire has a 1 st protrusion portion and a 2 nd protrusion portion which are bent, the bending direction of the 1 st protrusion portion is opposite to the bending direction of the 2 nd protrusion portion, the 1 st region has a 1 st opposing region in which the 1 st protrusion portion and the 2 nd protrusion portion are adjacently and oppositely arranged, and the 1 st region has: a central region located at the center of the 1 st region when viewed along a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region, the 1 st opposing region being provided in the central region.
If the number of zones of the heater section is increased in order to improve the uniformity of the in-plane temperature distribution of the object to be processed, the number of power feeding sections and the like for feeding power to each zone is increased. If the number of power feeding portions and the like increases, the number of protruding portions provided to the heater wire so as to avoid the power feeding portions and the like also increases. In general, since the current flows through the shortest distance, when the current flows in the protruding portion of the heater wire, the current flows more easily in the inside of the protruding portion than in the outside of the protruding portion. This makes it easier for the amount of heat generated to be reduced on the outside of the protruding portion than on the inside of the protruding portion. That is, the protruding portion easily becomes a cold spot. In order to improve the uniformity of the in-plane temperature distribution of the heater portion, for example, it is conceivable to dispose the protruding portion in a dispersed manner in the plane of the heater portion. However, if the protruding portions are disposed in a dispersed manner in the surface of the heater portion, there is a possibility that the cold spots are dispersed and the temperature control becomes complicated. On the other hand, if the protruding portions are arranged in a concentrated manner in the surface of the heater portion, there is a possibility that the temperature at the cold spot further decreases and the uniformity of the in-plane temperature distribution of the heater portion decreases. In contrast, according to this electrostatic chuck, the 1 st opposing region of the 1 st region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged (i.e., the protruding portions are concentrated) is provided in the central region in which the temperature in the 1 st region is more likely to be higher than in the outer peripheral region. This suppresses the occurrence of scattering of the cold spots, and the 1 st opposing region of the 1 st region, which is the cold spot, is provided in the center region of the 1 st region, which is the hot spot, whereby a significant decrease in temperature at the cold spots can be suppressed. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
The 9 th invention is an electrostatic chuck comprising: a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface; a base plate having an upper surface on the ceramic dielectric substrate side, a lower surface on the opposite side of the upper surface, and a coolant flow path for flowing a cooling medium, and supporting the ceramic dielectric substrate; and a heater section for heating the ceramic dielectric substrate, wherein the heater section comprises: a 1 st heater element; a bypass layer that is a power supply path to the 1 st heater element; and a 1 st power supply terminal, a 2 nd power supply terminal electrically connected to the bypass layer, the 1 st heater element being provided between the 1 st main surface and the upper surface, the 1 st heater element having a plurality of regions, the plurality of regions of the 1 st heater element having a 1 st region, the 1 st region having: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire, wherein the 1 st power supply unit is provided at a position not overlapping the 1 st power supply terminal in a Z direction perpendicular to the 1 st main surface, and is electrically connected to the 1 st power supply terminal through the bypass layer, and the 2 nd power supply unit is provided at a position not overlapping the 2 nd power supply terminal in the Z direction, and is electrically connected to the 2 nd power supply terminal through the bypass layer, and the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided in the plurality of extending portions protruding in the 2 nd direction, the plurality of extending portions having a 1 st extending portion and a 2 nd extending portion, the plurality of protruding portions having: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding portion provided in the 2 nd extending portion, the 1 st protruding portion protruding toward the 2 nd protruding portion, the 2 nd protruding portion protruding toward the 1 st protruding portion, the 1 st region having a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged, the 1 st opposing region being provided at a position overlapping at least one of the 1 st power supply terminal and the 2 nd power supply terminal in the Z direction.
If the number of zones of the heater section is increased in order to improve the uniformity of the in-plane temperature distribution of the object to be processed, the number of power feeding sections and the like for feeding power to each zone is increased. If the number of power feeding portions and the like increases, the number of protruding portions provided to the heater wire so as to avoid the power feeding portions and the like also increases. In general, since the current flows through the shortest distance, when the current flows in the protruding portion of the heater wire, the current flows more easily in the inside of the protruding portion than in the outside of the protruding portion. This makes it easier for the amount of heat generated to be reduced on the outside of the protruding portion than on the inside of the protruding portion. That is, the protruding portion easily becomes a cold spot. In order to improve the uniformity of the in-plane temperature distribution of the heater portion, for example, it is conceivable to dispose the protruding portion in a dispersed manner in the plane of the heater portion. However, if the protruding portions are disposed in a dispersed manner in the surface of the heater portion, there is a possibility that the cold spots are dispersed and the temperature control becomes complicated. On the other hand, if the protruding portions are arranged in a concentrated manner in the surface of the heater portion, there is a possibility that the temperature at the cold spot further decreases and the uniformity of the in-plane temperature distribution of the heater portion decreases. In addition, even when a coolant passage for flowing a coolant is provided in the base plate, the coolant passage is not provided at a position where a power supply terminal for supplying power to the bypass layer is provided. Therefore, the position where the power supply terminal is provided is more difficult to be cooled than other positions, and is likely to be a hot spot. In contrast, according to this electrostatic chuck, the 1 st opposing region in which the 1 st region is disposed adjacently and oppositely (that is, the protruding portion is concentrated) is provided at a position overlapping at least one of the 1 st power supply terminal and the 2 nd power supply terminal. This suppresses the occurrence of the scattering of the cold spots, and also causes the 1 st opposing region of the 1 st region, which is the cold spot, to overlap the 1 st power supply terminal or the 2 nd power supply terminal, which is the hot spot, thereby suppressing a significant decrease in temperature at the cold spot. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
The 10 th invention is the electrostatic chuck according to the 9 th invention, wherein the 1 st zone has: a central region located at the center of the 1 st region when viewed along the Z direction; and an outer peripheral region located outside the central region, the 1 st opposing region being provided in the central region.
According to this electrostatic chuck, the 1 st opposing region of the 1 st region is provided in the central region of the 1 st region where the temperature is more likely to become higher than the outer peripheral region. This allows the 1 st opposing region of the 1 st zone which is the cold spot to overlap with the center region of the 1 st zone which is the hot spot, thereby suppressing a significant decrease in temperature at the cold spot. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
An 11 th invention is the electrostatic chuck according to the 9 th invention, wherein the plurality of zones of the 1 st heater element are divided in a radial direction, and the 1 st direction is a circumferential direction.
According to this electrostatic chuck, the in-plane temperature of the processing object can be efficiently controlled.
The 12 th invention is the electrostatic chuck according to the 9 th invention, wherein the plurality of regions of the 1 st heater element are divided in a radial direction, and the 1 st direction is a radial direction.
According to this electrostatic chuck, the in-plane temperature of the processing object can be efficiently controlled.
The 13 th invention is the electrostatic chuck according to any one of the 9 th to 12 th inventions, wherein the plurality of extensions further includes a 3 rd extension portion located between the 1 st extension portion and the 2 nd extension portion in the 2 nd direction, and the 3 rd extension portion is provided at a position not overlapping the 1 st and 2 nd protruding portions in the 2 nd direction.
The 1 st projection and the 2 nd projection are disposed adjacently and oppositely. Therefore, the shortest distance between the 1 st extension portion and the 2 nd extension portion may be larger than the shortest distance when the 1 st projection portion and the 2 nd projection portion are not formed.
According to this electrostatic chuck, the 3 rd extending portion is disposed between the 1 st extending portion and the 2 nd extending portion at a position where the 3 rd extending portion does not overlap with the 1 st protruding portion and the 2 nd protruding portion, and therefore the range of the 1 st opposing region can be made small. Thus, uniformity of the in-plane temperature distribution of the processing object can be improved.
The 14 th invention is the electrostatic chuck according to any one of the 9 th to 12 th inventions, wherein the plurality of protruding portions further includes a 3 rd protruding portion provided in the 1 st extending portion and protruding toward the 2 nd protruding portion, and the 3 rd protruding portion is disposed adjacent to and opposite to the 2 nd protruding portion.
According to this electrostatic chuck, the region (the 2 nd opposing region) in which the 2 nd protruding portion and the 3 rd protruding portion are concentrated is disposed in the vicinity of the 1 st opposing region, and the number of cold spots in the entire surface can be reduced. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
An invention 15 is an electrostatic chuck, comprising: a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface; a base plate having an upper surface on the ceramic dielectric substrate side, a lower surface on the opposite side of the upper surface, and a coolant flow path for flowing a cooling medium, and supporting the ceramic dielectric substrate; and a heater section for heating the ceramic dielectric substrate, wherein the heater section comprises: a 1 st heater element; a 2 nd heater element; a bypass layer that is a power supply path to the 1 st heater element and the 2 nd heater element; and a 1 st power supply terminal, a 2 nd power supply terminal, a 3 rd power supply terminal, a 4 th power supply terminal, electrically connected to the bypass layer, the 1 st heater element being disposed between the 1 st main face and the upper face, the 2 nd heater element being disposed between the 1 st main face and the 1 st heater element or between the 1 st heater element and the upper face, the 1 st heater element having a plurality of regions, the plurality of regions of the 1 st heater element having a 1 st region, the 1 st region having: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply portion and a 2 nd power supply portion for supplying power to the 1 st heater wire, wherein the 1 st power supply portion is provided at a position not overlapping the 1 st power supply terminal in a Z direction perpendicular to the 1 st main surface, the 1 st power supply portion is electrically connected to the 1 st power supply terminal by the bypass layer, the 2 nd power supply portion is provided at a position not overlapping the 2 nd power supply terminal in the Z direction, the 2 nd power supply portion is electrically connected to the 2 nd power supply terminal by the bypass layer, the 2 nd heater element has a plurality of regions, the plurality of regions of the 2 nd heater element has a 2 nd region, and the 2 nd region has: a 2 nd heater wire which generates heat by the flow of current; and a 3 rd power supply unit and a 4 th power supply unit for supplying power to the 2 nd heater wire, wherein the 3 rd power supply unit is provided at a position in the Z direction where the 3 rd power supply unit does not overlap with the 3 rd power supply terminal, the bypass layer is electrically connected to the 3 rd power supply terminal, the 4 th power supply unit is provided at a position in the Z direction where the 4 th power supply unit does not overlap with the 4 th power supply terminal, the bypass layer is electrically connected to the 4 th power supply terminal, and at least one of the 3 rd power supply terminal and the 4 th power supply terminal is provided at a position in the Z direction where the bypass layer overlaps with a virtual line segment connecting the centers of the 1 st power supply unit and the 2 nd power supply unit.
If the number of zones of the heater section is increased in order to improve the uniformity of the in-plane temperature distribution of the object to be processed, the number of power feeding sections and the like for feeding power to each zone is also increased. The power supply portion is likely to be a cold spot. On the other hand, even when a coolant passage for flowing a coolant is provided in the base plate, the coolant passage is not provided at a position where a power supply terminal for supplying power to the bypass layer is provided. Therefore, the position where the power supply terminal is provided is more difficult to be cooled than other positions, and is likely to be a hot spot. In contrast, according to this electrostatic chuck, at least one of the 3 rd power supply terminal and the 4 th power supply terminal for supplying power to the 2 nd heater element via the bypass layer is provided at a position overlapping with a virtual line segment connecting the center of the 1 st power supply portion and the center of the 2 nd power supply portion for supplying power to the 1 st heater line. In this way, the 3 rd power supply terminal or the 4 th power supply terminal, which is a hot spot, is provided between the 1 st power supply unit and the 2 nd power supply unit, which are cold spots, whereby the temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
In the invention 16, in the invention 15, at least one of the center of the 3 rd power supply terminal and the center of the 4 th power supply terminal is provided at a position overlapping the virtual line segment.
According to the electrostatic chuck, the 3 rd power supply terminal and the 4 th power supply terminal are provided at positions where at least any one of the centers of the 3 rd power supply terminal and the 4 th power supply terminal overlaps with the virtual line segment. This can improve the uniformity of the in-plane temperature distribution of the object to be processed.
The 17 th invention is the electrostatic chuck, wherein in the 15 th or 16 th invention, the 1 st zone has; a central region located at the center of the 1 st region when viewed along the Z direction; and an outer peripheral region located outside the central region, wherein at least one of the 1 st power feeding portion and the 2 nd power feeding portion is provided in the central region.
According to this electrostatic chuck, at least one of the 1 st power supply portion and the 2 nd power supply portion is provided in a central region of the 1 st region where the temperature is more likely to be higher than in the outer peripheral region. Thus, by overlapping the 1 st power supply portion or the 2 nd power supply portion, which is the cold spot, with the central region of the 1 st zone, which is the hot spot, a significant decrease in temperature at the cold spot can be suppressed. That is, temperature unevenness can be offset. Thus, uniformity of the in-plane temperature distribution of the processing object can be improved.
An 18 th invention is the electrostatic chuck according to the 15 th or 16 th invention, wherein the 1 st zone includes an outer peripheral edge of the 1 st heater element, and the 1 st zone has: an inner peripheral portion located radially inward of a radial center line bisecting the 1 st region in a radial direction; and an outer peripheral portion including the outer peripheral edge, the outer peripheral portion being located radially outward of the radial center line, wherein at least one of the 1 st power feeding portion and the 2 nd power feeding portion is provided in the inner peripheral portion.
According to this electrostatic chuck, when the 1 st region includes the outer peripheral edge of the 1 st heater element (i.e., in the 1 st region located at the outermost peripheral portion of the 1 st heater element), at least one of the 1 st power feeding portion and the 2 nd power feeding portion is provided at the inner peripheral portion in the 1 st region where the temperature is more likely to be higher than the outer peripheral portion. In this way, the 1 st power supply portion or the 2 nd power supply portion, which is the cold spot, is provided in the inner peripheral portion of the 1 st zone, which is the hot spot, and thus a significant decrease in temperature at the cold spot can be suppressed. That is, temperature unevenness can be offset. Thus, uniformity of the in-plane temperature distribution of the processing object can be improved.
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.
Fig. 1 is a perspective view schematically showing an electrostatic chuck according to an embodiment.
Fig. 2 (a) and 2 (b) are cross-sectional views schematically showing a part of an electrostatic chuck according to an embodiment.
For ease of illustration, a partial cross-sectional view of an electrostatic chuck is shown in fig. 1.
Fig. 2 (a) is a cross-sectional view taken along line A1-A2 shown in fig. 1.
Fig. 2 (B) is an enlarged view of the region B1 shown in fig. 2 (a). In fig. 2 (b), the object W to be processed is omitted.
As shown in fig. 1, 2 (a) and 2 (b), the electrostatic chuck 10 according to the embodiment includes a ceramic dielectric substrate 100, a heater unit 200, and a base plate 300.
The ceramic dielectric substrate 100 is a flat plate-shaped base material composed of, for example, a polycrystalline ceramic sintered body, and includes: a1 st main surface 101 on which a processing object W such as a semiconductor wafer is placed; and a2 nd main surface 102 on the opposite side of the 1 st main surface 101.
In the present specification, a direction perpendicular to the 1 st main surface 101 is referred to as a Z direction. In other words, the Z direction is a direction connecting the 1 st main surface 101 and the 2 nd main surface 102. In other words, the Z direction is a direction from the base plate 300 toward the ceramic dielectric substrate 100. One direction orthogonal to the Z direction is referred to as an X direction, and the direction orthogonal to the Z direction and the X direction is referred to as a Y direction. In the present specification, "in-plane" is, for example, in the X-Y plane. In the present application, the term "planar view" means a state viewed along the Z direction.
Examples of the crystalline material contained in the ceramic dielectric substrate 100 include Al 2 O 3 、AlN、SiC、Y 2 O 3 YAG, and the like. By using such a material, the infrared ray transmittance, thermal conductivity, dielectric strength, and plasma resistance of the ceramic dielectric substrate 100 can be improved.
An electrode layer 111 is provided inside the ceramic dielectric substrate 100. The electrode layer 111 is provided between the 1 st main surface 101 and the 2 nd main surface 102. That is, the electrode layer 111 is formed to be inserted into the ceramic dielectric substrate 100. The electrode layer 111 is integrally sintered to the ceramic dielectric substrate 100.
The electrode layer 111 is not limited to be provided between the 1 st main surface 101 and the 2 nd main surface 102, and may be provided in addition to the 2 nd main surface 102.
By applying a voltage for holding the object W to be processed to the electrode layer 111 of the electrostatic chuck 10, electric charges are generated on the 1 st main surface 101 side of the electrode layer 111, and the object W is held by electrostatic force.
An electrode layer 111 is provided along the 1 st main surface 101 and the 2 nd main surface 102. The electrode layer 111 is an adsorption electrode for adsorbing and holding the object W to be processed. The electrode layer 111 may be either a monopolar type or a bipolar type. The electrode layer 111 may be of a three-pole type or of another multi-pole type. The number of electrode layers 111 and the configuration of the electrode layers 111 may be appropriately selected.
The base plate 300 is provided on the 2 nd main surface 102 side of the ceramic dielectric substrate 100, and supports the ceramic dielectric substrate 100. The base plate 300 has an upper surface 302 on the ceramic dielectric substrate 100 side and a lower surface 303 on the opposite side of the upper surface 302. The base plate 300 is provided with a refrigerant passage 301 for flowing a cooling medium. That is, the refrigerant flow path 301 is provided inside the base plate 300. Examples of the material of the base plate 300 include aluminum, aluminum alloy, titanium, and titanium alloy.
The base plate 300 plays a role of adjusting the temperature of the ceramic dielectric substrate 100. For example, when cooling the ceramic dielectric substrate 100, a cooling medium flows into the cooling medium channel 301, and the cooling medium flows out of the cooling medium channel 301 through the cooling medium channel 301. Thereby, the ceramic dielectric substrate 100 mounted thereon can be cooled by absorbing heat of the base plate 300 by the cooling medium.
Further, the convex portion 113 is provided on the 1 st main surface 101 side of the ceramic dielectric substrate 100 as needed. Grooves 115 are provided between the mutually adjacent convex portions 113. The grooves 115 communicate with each other. A space is formed between the back surface of the object W placed on the electrostatic chuck 10 and the groove 115.
The groove 115 is connected to an introduction path 321 penetrating the base plate 300 and the ceramic dielectric substrate 100. When a heat transfer gas such as helium (He) is introduced from the introduction path 321 in a state where the object W is adsorbed and held, the heat transfer gas flows in a space provided between the object W and the tank 115, and the object W can be directly heated or cooled by the heat transfer gas.
The heater unit 200 heats the ceramic dielectric substrate 100. Since the heater section 200 heats the ceramic dielectric substrate 100, the object to be processed W is heated by the ceramic dielectric substrate 100. In this example, the heater portion 200 is provided between the 1 st main surface 101 and the 2 nd main surface 102. That is, the heater portion 200 is formed to be inserted into the ceramic dielectric substrate 100. In other words, the heater section 200 is built in the ceramic dielectric substrate 100.
The heater section 200 may be provided separately from the ceramic dielectric substrate 100. At this time, the heater section 200 is provided between the ceramic dielectric substrate 100 and the base plate 300 via an adhesive layer, for example. Examples of the material of the adhesive layer include a heat-resistant resin such as silica gel having relatively high heat conductivity.
Fig. 3 is an exploded perspective view schematically showing a heater section according to the embodiment.
Fig. 4 is an exploded cross-sectional view schematically showing a heater section according to the embodiment.
As shown in fig. 3 and 4, in this example, the heater section 200 includes a 1 st support plate 210, a 1 st insulating layer 220, an auxiliary heater element 231, a 2 nd insulating layer 240, a main heater element 232, a 3 rd insulating layer 245, a bypass layer 250, a 4 th insulating layer 260, a 2 nd support plate 270, and a power supply terminal 280.
The 1 st support plate 210 is disposed on the auxiliary heater element 231, the main heater element 232, the bypass layer 250, and the like. The 2 nd support plate 270 is disposed under the auxiliary heater element 231, the main heater element 232, the bypass layer 250, and the like. The surface 211 (upper surface) of the 1 st support plate 210 forms an upper surface of the heater section 200. The surface 271 (lower surface) of the 2 nd support plate 270 forms the lower surface of the heater section 200. When the heater section 200 is incorporated in the ceramic dielectric substrate 100, the 1 st support plate 210 and the 2 nd support plate 270 may be omitted.
The 1 st support plate 210 and the 2 nd support plate 270 are support plates for supporting the auxiliary heater element 231, the main heater element 232, and the like. In this example, the 1 st support plate 210 and the 2 nd support plate 270 sandwich and support the 1 st insulating layer 220, the auxiliary heater element 231, the 2 nd insulating layer 240, the main heater element 232, the 3 rd insulating layer 245, the bypass layer 250, and the 4 th insulating layer 260.
The 1 st insulating layer 220 is disposed between the 1 st support plate 210 and the 2 nd support plate 270. The auxiliary heater element 231 is disposed between the 1 st insulating layer 220 and the 2 nd support plate 270. As such, the auxiliary heater element 231 is disposed to overlap the 1 st support plate 210. In other words, the 1 st insulating layer 220 is disposed between the 1 st support plate 210 and the auxiliary heater element 231. When the heater portion 200 is incorporated in the ceramic dielectric substrate 100, the ceramic dielectric substrate 100 doubles as the 1 st insulating layer 220.
The 2 nd insulating layer 240 is disposed between the auxiliary heater element 231 and the 2 nd support plate 270. The main heater element 232 is disposed between the 2 nd insulating layer 240 and the 2 nd support plate 270. As such, the main heater element 232 is provided in a layer different from the layer in which the auxiliary heater element 231 is provided. At least a portion of the main heater element 232 overlaps the auxiliary heater element 231 in the Z-direction. The 3 rd insulating layer 245 is disposed between the main heater element 232 and the 2 nd support plate 270. The bypass layer 250 is disposed between the 3 rd insulating layer 245 and the 2 nd support plate 270. The 4 th insulating layer 260 is disposed between the bypass layer 250 and the 2 nd support plate 270.
In other words, the auxiliary heater element 231 is disposed between the 1 st insulating layer 220 and the 2 nd insulating layer 240. In other words, the main heater element 232 is disposed between the 2 nd insulating layer 240 and the 3 rd insulating layer 245. In other words, the bypass layer 250 is disposed between the 3 rd insulating layer 245 and the 4 th insulating layer 260.
The auxiliary heater element 231 contacts, for example, the 1 st insulating layer 220 and the 2 nd insulating layer 240, respectively. The main heater element 232 contacts, for example, the 2 nd insulating layer 240 and the 3 rd insulating layer 245, respectively. The bypass layers 250 contact, for example, the 3 rd insulating layer 245 and the 4 th insulating layer 260, respectively.
The bypass layer 250 and the 4 th insulating layer 260 are provided as needed and may be omitted. When the bypass layer 250 and the 4 th insulating layer 260 are not provided, the 3 rd insulating layer 245 contacts the 2 nd support plate 270. The heater section 200 is provided with the bypass layer 250 and the 4 th insulating layer 260, for example, as will be described below.
The 1 st support plate 210 has a relatively high thermal conductivity. For example, the 1 st support plate 210 has a higher thermal conductivity than the auxiliary heater element 231 and than the main heater element 232. Examples of the material of the 1 st support plate 210 include a metal containing at least one of aluminum, copper and nickel, and graphite having a multilayer structure. The thickness (length in the Z direction) of the 1 st support plate 210 is, for example, about 0.1mm or more and 3.0mm or less. More preferably, the thickness of the 1 st support plate 210 is, for example, about 0.3mm or more and 1.0mm or less. The 1 st support plate 210 improves uniformity of the in-plane temperature distribution of the heater portion 200. The 1 st support plate 210 functions as a vapor chamber, for example. The 1 st support plate 210 suppresses curling of the heater portion 200. The 1 st support plate 210 improves the adhesion strength between the heater portion 200 and the ceramic dielectric substrate 100.
The material, thickness and function of the 2 nd support plate 270 are the same as those of the 1 st support plate 210, respectively. For example, the thermal conductivity of the 2 nd support plate 270 is higher than that of the auxiliary heater element 231 and higher than that of the main heater element 232. In the embodiment, at least one of the 1 st support plate 210 and the 2 nd support plate 270 may be omitted.
As a material of the 1 st insulating layer 220, an insulating material such as a resin or ceramic can be used. As examples of the case where the 1 st insulating layer 220 is a resin, polyimide, polyamideimide, or the like can be given. As an example of the case where the 1 st insulating layer 220 is a ceramic, al may be mentioned 2 O 3 、AlN、SiC、Y 2 O 3 YAG, and the like. The thickness (length in the Z direction) of the 1 st insulating layer 220 is, for example, about 0.01mm or more and 0.20mm or less. The 1 st insulating layer 220 bonds the 1 st support plate 210 and the auxiliary heater element 231. The 1 st insulating layer 220 electrically insulates between the 1 st support plate 210 and the auxiliary heater element 231. Thus, the 1 st insulating layer 220 has an electrical insulating function and a surface bonding function. The 1 st insulating layer 220 may have at least an insulating function, and may have other functions such as a heat conduction function and a diffusion prevention function.
The material and thickness of the 2 nd insulating layer 240 are the same as those of the 1 st insulating layer 220, respectively. The material and thickness of the 3 rd insulating layer 245 are the same as those of the 1 st insulating layer 220, respectively. The material and thickness of the 4 th insulating layer 260 are the same as those of the 1 st insulating layer 220, respectively.
The 2 nd insulating layer 240 joins the auxiliary heater element 231 and the main heater element 232. The 2 nd insulating layer 240 electrically insulates between the auxiliary heater element 231 and the main heater element 232. Thus, the 2 nd insulating layer 240 has an electrical insulating function and a surface bonding function. The 2 nd insulating layer 240 may have at least an insulating function, and may have other functions such as a heat conduction function and a diffusion prevention function.
The 3 rd insulating layer 245 joins the main heater element 232 with the bypass layer 250. The 3 rd insulating layer 245 electrically insulates between the main heater element 232 and the bypass layer 250. In this way, the 3 rd insulating layer 245 has an electrical insulating function and a surface bonding function. The 3 rd insulating layer 245 may have at least an insulating function, and may have other functions such as a heat conduction function and a diffusion prevention function.
The 4 th insulating layer 260 bonds the bypass layer 250 to the 2 nd support plate 270. The 4 th insulating layer 260 electrically insulates between the bypass layer 250 and the 2 nd support plate 270. In this way, the 4 th insulating layer 260 has an electrical insulating function and a surface bonding function. The 4 th insulating layer 260 may have at least an insulating function, and may have other functions such as a heat conduction function and a diffusion prevention function.
When the auxiliary heater element 231 is provided in the ceramic dielectric substrate 100, the material of the auxiliary heater element 231 may be, for example, a metal including at least one of titanium, chromium, nickel, copper, aluminum, molybdenum, tungsten, palladium, platinum, silver, tantalum, molybdenum carbide, and tungsten carbide. Further, the material of the auxiliary heater element 231 preferably includes the above-described metal and ceramic materials. Examples of the ceramic material include alumina (Al 2 O 3 ) Yttria (Y) 2 O 3 ) Yttrium aluminum garnet (YAG_Y) 3 Al 5 O 12 ) Aluminum nitride (AlN), silicon carbide (SiC), and the like. The ceramic material included in the auxiliary heater element 231 is preferably the same as the ceramic dielectric substrate 100. When the auxiliary heater element 231 is provided outside the ceramic dielectric substrate 100, the material of the auxiliary heater element 231 may be, for example, a metal including at least one of stainless steel, titanium, chromium, nickel, copper, aluminum, INCONEL (registered trademark), molybdenum, tungsten, palladium, platinum, silver, tantalum, molybdenum carbide, and tungsten carbide. The thickness (length in the Z direction) of the auxiliary heater element 231 is, for example, about 0.01mm or more and 0.20mm or less. The material and thickness of the main heater element 232 are the same as the material and thickness of the auxiliary heater element 231, respectively. For example, as a material of the main heater element 232 when the main heater element 232 is provided inside the ceramic dielectric substrate 100, the same material as that of the auxiliary heater element 231 when the auxiliary heater element 231 is provided inside the ceramic dielectric substrate 100 can be exemplified. For example, as a material of the main heater element 232 when the main heater element 232 is provided outside the ceramic dielectric substrate 100, there can be exemplified a material similar to that of the auxiliary heater element 231 when the auxiliary heater element 231 is provided outside the ceramic dielectric substrate 100 The same material. The auxiliary heater elements 231 and the main heater elements 232 are electrically connected to the bypass layer 250, for example. On the other hand, the auxiliary heater element 231 and the main heater element 232 are electrically insulated from the 1 st support plate 210 and the 2 nd support plate 270, respectively.
The auxiliary heater element 231 and the main heater element 232 generate heat by the flow of current, respectively. The ceramic dielectric substrate 100 is heated by heat generated by the auxiliary heater element 231 and the main heater element 232. The auxiliary heater element 231 and the main heater element 232 heat the processing object W by, for example, the ceramic dielectric substrate 100, thereby making the in-plane temperature distribution of the processing object W uniform. Alternatively, the auxiliary heater element 231 and the main heater element 232 may intentionally vary the in-plane temperature of the object W by heating the object W with the ceramic dielectric substrate 100, for example.
The bypass layer 250 is disposed substantially parallel to the 1 st support plate 210 and substantially parallel to the 2 nd support plate 270 as follows. The bypass layer 250 has a plurality of bypass portions 251. In this example, the bypass layer 250 has 10 bypass portions 251 (bypass portions 251a to 251 j). The number of bypass portions 251 is not limited to "10". The bypass layer 250 has a plate shape.
The bypass layer 250 has conductivity, for example. The bypass layer 250 is electrically connected to the auxiliary heater element 231 and the main heater element 232, for example. The bypass layer 250 is a power supply path for the auxiliary heater element 231 and the main heater element 232. On the other hand, the bypass layer 250 is electrically insulated from the 1 st support plate 210 and the 2 nd support plate 270 by an insulating layer, for example.
The thickness (length in the Z direction) of the bypass layer 250 is, for example, about 0.03mm or more and 0.30mm or less. The bypass layer 250 has a thickness greater than that of the 1 st insulating layer 220. The bypass layer 250 has a thickness thicker than that of the 2 nd insulating layer 240. The bypass layer 250 has a thickness greater than that of the 3 rd insulating layer 245. The bypass layer 250 has a thickness thicker than that of the 4 th insulating layer 260.
For example, when the bypass layer 250 is provided outside the ceramic dielectric substrate 100, the bypass layer 250 may be made of a metal including at least one of stainless steel, titanium, chromium, nickel, copper, aluminum, INCONEL (registered trademark), molybdenum, tungsten, palladium, platinum, silver, tantalum, molybdenum carbide, and tungsten carbide. For example, when the heater portion 200 (the bypass layer 250, the auxiliary heater element 231, and the main heater element 232) is provided inside the ceramic dielectric substrate 100, the bypass layer 250 is made of the same material as the auxiliary heater element 231 and the main heater element 232. On the other hand, the bypass layer 250 has a thickness thicker than that of the auxiliary heater element 231 and thicker than that of the main heater element 232. Thus, the bypass layer 250 has a lower resistance than the auxiliary heater element 231 and lower resistance than the main heater element 232. Thus, even when the material of the bypass layer 250 is the same as that of the auxiliary heater element 231 and the main heater element 232, heat generation of the bypass layer 250 like the auxiliary heater element 231 and the main heater element 232 can be suppressed. That is, the resistance of the bypass layer 250 is suppressed, and the amount of heat generated by the bypass layer 250 can be suppressed.
The means for suppressing the resistance of the bypass layer 250 and suppressing the amount of heat generation of the bypass layer 250 may be realized by using a material having a low volume resistivity, instead of the thickness of the bypass layer 250. That is, the material of the bypass layer 250 may also be different from the material of the auxiliary heater element 231 and the main heater element 232. Examples of the material of the bypass layer 250 include metals including at least one of stainless steel, titanium, chromium, nickel, copper, aluminum, INCONEL (registered trademark), molybdenum, tungsten, palladium, platinum, silver, tantalum, molybdenum carbide, and tungsten carbide.
For example, as a material of the bypass layer 250 when the bypass layer 250 is provided inside the ceramic dielectric substrate 100, the same material as that of the auxiliary heater element 231 when the auxiliary heater element 231 is provided inside the ceramic dielectric substrate 100 can be exemplified. For example, as a material of the bypass layer 250 when the bypass layer 250 is provided outside the ceramic dielectric substrate 100, the same material as that of the auxiliary heater element 231 when the auxiliary heater element 231 is provided outside the ceramic dielectric substrate 100 can be exemplified.
The power supply terminal 280 is electrically connected to the bypass layer 250. In a state where the heater portion 200 is provided between the base plate 300 and the ceramic dielectric substrate 100, the power supply terminal 280 is provided so as to face the base plate 300 from the heater portion 200. The power supply terminal 280 supplies power supplied from outside the electrostatic chuck 10 to the auxiliary heater element 231 and the main heater element 232 through the bypass layer 250. The power supply terminal 280 may be directly connected to the auxiliary heater element 231 and the main heater element 232, for example. Thereby, the bypass layer 250 can be omitted.
On the other hand, when the auxiliary heater element 231 and/or the main heater element 232 has a plurality of zones of, for example, 20 or more or 50 or more or 100 or more, it is difficult to arrange the power supply terminals 280 corresponding to the respective zones. By providing the bypass layer 250, the degree of freedom in arrangement of the power supply terminals 280 is improved as compared with when the power supply terminals are arranged in each region.
The heater section 200 has a plurality of power supply terminals 280. In this example, the heater unit 200 has 10 power supply terminals 280 (power supply terminals 280a to 280 j). The number of power supply terminals 280 is not limited to "10". One power supply terminal 280 is electrically connected to one bypass portion 251. That is, the number of power supply terminals 280 is the same as the number of bypass portions 251. A hole 273 is bored through the 2 nd support plate 270. The power supply terminal 280 is electrically connected to the bypass portion 251 through the hole 273.
The auxiliary heater element 231 has a 1 st region 701 and a 2 nd region 702. The 1 st region 701 and the 2 nd region 702 have a 1 st auxiliary power supply portion 231a, a 2 nd auxiliary power supply portion 231b, and an auxiliary heater wire 231c, respectively. The auxiliary heater wire 231c is electrically connected to the 1 st auxiliary power supply unit 231a and the 2 nd auxiliary power supply unit 231b. The 1 st auxiliary power supply portion 231a is provided at one end of the auxiliary heater wire 231c, and the 2 nd auxiliary power supply portion 231b is provided at the other end of the auxiliary heater wire 231c. The auxiliary heater line 231c generates heat by the flow of current. The 1 st auxiliary power supply unit 231a and the 2 nd auxiliary power supply unit 231b supply power to the auxiliary heater wire 231c. The auxiliary heater element 231 is electrically connected to the bypass layer 250 at the 1 st auxiliary power supply portion 231a and the 2 nd auxiliary power supply portion 231b.
As shown by arrows C21 and C22 in fig. 4, when electric power is supplied from outside the electrostatic chuck 10 to the power supply terminal 280a, electric current flows from the power supply terminal 280a to the bypass portion 251a. As indicated by arrows C23 and C24 in fig. 4, the current flowing to the bypass portion 251a flows from the bypass portion 251a to the 1 st region 701 of the auxiliary heater element 231. As shown by arrows C25 and C26 in fig. 4, a current flowing in the 1 st region 701 flows from the 1 st region 701 to the bypass portion 251b. More specifically, the current flowing to the bypass portion 251a flows to the auxiliary heater line 231c of the 1 st region 701 through the 1 st auxiliary power supply portion 231a of the 1 st region 701, and flows to the bypass portion 251b through the 2 nd auxiliary power supply portion 231b of the 1 st region 701. As indicated by arrows C27 and C28 in fig. 4, the current flowing through the bypass portion 251b flows from the bypass portion 251b to the power supply terminal 280b. As indicated by arrow C29 in fig. 4, the current flowing to the power supply terminal 280b flows to the outside of the electrostatic chuck 10.
Similarly, when power is supplied from outside the electrostatic chuck 10 to the power supply terminal 280C, as indicated by arrows C31 to C39 in fig. 4, current flows in the order of the power supply terminal 280C, the bypass portion 251C, the 2 nd region 702 of the auxiliary heater element 231, the bypass portion 251d, and the power supply terminal 280 d.
The main heater element 232 has a main zone 601, a main zone 602, and a main zone 603. The main areas 601 to 603 have a 1 st main power supply portion 232a, a 2 nd main power supply portion 232b, and a main heater wire 232c, respectively. The main heater wire 232c is electrically connected to the 1 st main power supply portion 232a and the 2 nd main power supply portion 232b. The 1 st main power supply portion 232a is provided at one end of the main heater wire 232c, and the 2 nd main power supply portion 232b is provided at the other end of the main heater wire 232c. The main heater wire 232c generates heat by the flow of current. The 1 st main power supply portion 232a and the 2 nd main power supply portion 232b supply power to the main heater wire 232c. The main heater element 232 is electrically connected to the bypass layer 250 at the 1 st main power supply portion 232a and the 2 nd main power supply portion 232b.
As shown by arrows C41 and C42 in fig. 4, when electric power is supplied from the outside of the electrostatic chuck 10 to the power supply terminal 280e, electric current flows from the power supply terminal 280e to the bypass portion 251e. As indicated by arrows C43 and C44 in fig. 4, the current flowing to the bypass portion 251e flows from the bypass portion 251e to the main region 601 of the main heater element 232. As indicated by arrows C45 and 426 in fig. 4, the current flowing in the main region 601 flows from the main region 601 to the bypass portion 251f. More specifically, the current flowing to the bypass portion 251e flows to the main heater wire 232c of the main region 601 through the 1 st main power supply portion 232a of the main region 601, and flows to the bypass portion 251f through the 2 nd main power supply portion 232b of the main region 601. As indicated by arrows C47 and C48 in fig. 4, the current flowing through the bypass portion 251f flows from the bypass portion 251f to the power supply terminal 280f. As indicated by arrow C49 in fig. 4, the current flowing to the power supply terminal 280f flows to the outside of the electrostatic chuck 10.
Similarly, when power is supplied from outside the electrostatic chuck 10 to the power supply terminal 280g, as indicated by arrows C51 to C59, current flows in the order of the power supply terminal 280g, the bypass portion 251g, the main region 602 of the main heater element 232, the bypass portion 251h, and the power supply terminal 280 h.
Similarly, when power is supplied from outside the electrostatic chuck 10 to the power supply terminal 280i, as indicated by arrows C61 to C69, current flows in the order of the power supply terminal 280i, the bypass portion 251i, the main region 603 of the main heater element 232, the bypass portion 251j, and the power supply terminal 280 j.
For example, the current flowing in the auxiliary heater element 231 and the current flowing in the main heater element 232 are controlled separately. In this example, the bypass portions 251 (bypass portions 251a, 251b, 251c, 251 d) connected to the auxiliary heater element 231 are different from the bypass portions 251 (bypass portions 251e, 251f, 251g, 251h, 251i, 251 j) connected to the main heater element 232, respectively. The bypass portion 251 connected to the auxiliary heater element 231 may also be the same as the bypass portion 251 connected to the main heater element 232.
For example, by making the voltage applied to the power supply terminals 280 (power supply terminals 280a, 280b, 280c, 280 d) that supply power to the auxiliary heater element 231 different from the voltage applied to the power supply terminals 280 (power supply terminals 280e, 280f, 280g, 280h, 280i, 280 j) that supply power to the main heater element 232, the output of the auxiliary heater element 231 can be made different from the output of the main heater element 232. That is, the output of each heater element can be independently controlled.
For example, the current flowing in the 1 st region 701 and the current flowing in the 2 nd region 702 of the auxiliary heater element 231 are controlled, respectively. In this example, the bypass portions 251 (bypass portions 251a and 251 b) connected to the 1 st region 701 are different from the bypass portions 251 (bypass portions 251c and 251 d) connected to the 2 nd region 702. The bypass portion 251 connected to the 1 st region 701 may be the same as the bypass portion 251 connected to the 2 nd region 702.
For example, by making the voltage applied to the power supply terminal 280 (power supply terminals 280a, 280 b) that supplies power to the 1 st region 701 different from the voltage applied to the power supply terminal 280 (power supply terminals 280c, 280 d) that supplies power to the 2 nd region 702, the output of the 1 st region 701 can be made different from the output of the 2 nd region 702. That is, the outputs of the respective areas (auxiliary areas) can be independently controlled.
For example, the current flowing in the main region 601, the current flowing in the main region 602, and the current flowing in the main region 603 of the main heater element 232 are controlled, respectively. In this example, the bypass portions 251 (bypass portions 251e and 251 f) connected to the main area 601, the bypass portions 251 (bypass portions 251g and 251 h) connected to the main area 602, and the bypass portions 251 (bypass portions 251i and 251 j) connected to the main area 603 are different from each other. The bypass portion 251 connected to the main section 601, the bypass portion 251 connected to the main section 602, and the bypass portion 251 connected to the main section 603 may be the same.
For example, by making different voltages applied to the power supply terminals 280 (power supply terminals 280e and 280 f) for supplying power to the main region 601, the power supply terminals 280 (power supply terminals 280g and 280 h) for supplying power to the main region 602, and the power supply terminals 280 (power supply terminals 280i and 280 j) for supplying power to the main region 603, the output of the main region 601, the output of the main region 602, and the output of the main region 603 can be made different. That is, the outputs of the respective main areas can be independently controlled.
The auxiliary heater element 231 generates less heat than the main heater element 232. That is, the auxiliary heater element 231 is a low-output auxiliary heater, and the main heater element 232 is a high-output main heater.
As described above, since the auxiliary heater element 231 generates less heat than the main heater element 232, the auxiliary heater element 231 can suppress temperature unevenness in the surface of the processing object W due to the pattern of the main heater element 232. Thus, uniformity of the in-plane temperature distribution of the processing object W can be improved.
The volume resistivity of the auxiliary heater element 231 is, for example, higher than that of the main heater element 232. Also, the volume resistivity of the auxiliary heater element 231 is the volume resistivity of the auxiliary heater line 231 c. That is, the volume resistivity of the auxiliary heater element 231 is the volume resistivity between the 1 st auxiliary power supply portion 231a and the 2 nd auxiliary power supply portion 231 b. In other words, the volume resistivity of the auxiliary heater element 231 is the volume resistivity on the paths indicated by arrows C25 and C35 in fig. 4. Likewise, the volume resistivity of the main heater element 232 is the volume resistivity of the main heater wire 232 c. That is, the volume resistivity of the main heater element 232 is the volume resistivity between the 1 st main power supply portion 232a and the 2 nd main power supply portion 232 b. In other words, the volume resistivity of the main heater element 232 is the volume resistivity on the paths indicated by arrows C45, C55, and C65 in fig. 4.
By making the volume resistivity of the auxiliary heater element 231 higher than the volume resistivity of the main heater element 232 in this way, the output (heat generation amount, power consumption) of the auxiliary heater element 231 can be made lower than the output (heat generation amount, power consumption) of the main heater element 232. Thus, the auxiliary heater element 231 can suppress temperature unevenness in the surface of the processing object W due to the pattern of the main heater element 232. Thus, uniformity of the in-plane temperature distribution of the processing object can be improved.
The periphery of the power supply terminal 280 is liable to become a singular point of temperature (a point where the temperature is greatly different from the surrounding area). In contrast, by providing the bypass layer 250, the degree of freedom in arrangement of the power supply terminal 280 can be improved. For example, the power supply terminals 280 which are likely to be temperature singular points can be arranged in a dispersed manner, and heat is likely to spread around the singular points. This can improve the uniformity of the in-plane temperature distribution of the processing object W.
By providing the bypass layer 250, the power supply terminal 280 having a large heat capacity is not directly connected to the auxiliary heater element 231 and the main heater element 232. This can improve the uniformity of the in-plane temperature distribution of the processing object W. In addition, by providing the bypass layer 250, the power supply terminal 280 may not be directly connected to the thinner auxiliary heater element 231 and the main heater element 232. This can improve the reliability of the heater unit 200.
As described above, the power supply terminal 280 is provided from the heater portion 200 toward the base plate 300. Accordingly, electric power can be supplied to the power supply terminal 280 from the lower surface 303 (see fig. 2 (a) and 2 (b)) side of the base plate 300 via a member called a socket or the like. This suppresses exposure of the power supply terminal 280 to the chamber in which the electrostatic chuck 10 is disposed, and realizes wiring of the heater.
In this example, the auxiliary heater element 231 is located more upward than the main heater element 232. In other words, the auxiliary heater element 231 is disposed between the main heater element 232 and the 1 st main surface 101. The position of the auxiliary heater element 231 and the position of the main heater element 232 may also be reversed. That is, the main heater element 232 may also be located more upward than the auxiliary heater element 231. In other words, the main heater element 232 may also be disposed between the 1 st main face 101 and the auxiliary heater element 231. From the viewpoint of temperature control, it is preferable that the auxiliary heater element 231 is located more upward than the main heater element 232.
When the auxiliary heater element 231 is located above the main heater element 232, the distance between the auxiliary heater element 231 and the processing object W is smaller than the distance between the main heater element 232 and the processing object W. Since the auxiliary heater element 231 is relatively close to the processing object W, the temperature of the processing object W can be easily controlled by the auxiliary heater element 231. That is, the auxiliary heater element 231 easily suppresses temperature unevenness in the surface of the object W to be processed due to the pattern of the main heater element 232. Thus, uniformity of the in-plane temperature distribution of the processing object W can be improved.
On the other hand, when the main heater element 232 is located above the auxiliary heater element 231, the main heater element 232 with a high output is relatively close to the processing object W. This can improve the temperature responsiveness (temperature increase rate, temperature decrease rate) of the object W.
In addition, in this example, the main heater element 232 is disposed between the bypass layer 250 and the auxiliary heater element 231 in the Z-direction. That is, the bypass layer 250 is located below the auxiliary heater element 231 and the main heater element 232.
As described above, by disposing the main heater element 232 between the bypass layer 250 and the auxiliary heater element 231 in the Z direction, the auxiliary heater element 231 and the main heater element 232 can be disposed on one side of the bypass layer 250. In this way, when the power supply terminal 280 is connected to the bypass layer 250, the power supply terminal 280 can be connected to the bypass layer 250 from the opposite side of the auxiliary heater element 231 and the main heater element 232. Accordingly, it is not necessary to provide holes for leading the power supply terminals 280 to the auxiliary heater elements 231 and the main heater elements 232, and the temperature singular points on the heater pattern can be reduced, and the uniformity of the in-plane temperature distribution of the auxiliary heater elements 231 and the main heater elements 232 can be improved.
The bypass layer 250 may be located above the auxiliary heater element 231 and the main heater element 232. That is, the bypass layer 250 may also be disposed between the 1 st support plate 210 and the auxiliary heater element 231. In addition, a bypass layer 250 may also be disposed between the 1 st support plate 210 and the main heater element 232. In addition, the bypass layer 250 may also be located between the auxiliary heater element 231 and the main heater element 232.
The number of heater elements included in the heater unit 200 is not limited to "2". That is, the heater section 200 may have other heater elements provided in different layers from the auxiliary heater element 231 and the main heater element 232. The heater unit 200 may have only one of the auxiliary heater element 231 and the main heater element 232. That is, any one of the auxiliary heater element 231 and the main heater element 232 may be omitted.
Fig. 5 is a plan view schematically showing a main region of a main heater element according to an embodiment.
Fig. 5 is a view of the main heater element 232 shown in fig. 3 projected on a plane perpendicular to the Z direction.
As shown in fig. 5, the main heater element 232 has a plurality of main zones 600 divided in the radial direction Dr. In the main heater element 232, for example, independent temperature control is performed in each main zone 600.
In the present specification, the "radial direction Dr" is a direction from the center of the heater element toward the outer periphery along a radius. "circumferential direction Dc" is a direction along the outer circumference of the heater element.
In this example, the plurality of main areas 600 has 3 main areas 601 to 603 arranged in the radial direction Dr. That is, the main heater element 232 is divided into 3 in the radial direction Dr. Each main region 600 is arranged in the order of main region 601, main region 602, and main region 603 from the center CT2 of the main heater element 232 toward the outside in the radial direction Dr.
In this example, the main region 601 has a circular shape centered on the center CT2 in plan view. The main region 602 is located outside the main region 601 in a ring shape centered on the center CT2 in plan view. The main region 603 is located outside the main region 602 in a ring shape centered on the center CT2 in plan view.
In this example, the width LM1 of the radial direction Dr of the main area 601, the width LM2 of the radial direction Dr of the main area 602, and the width LM3 of the radial direction Dr of the main area 603 are the same, respectively. The widths LM1 to LM3 may also be different.
The number of main areas 600 and the shape of the main areas 600 in a plan view may be arbitrary. The main region 600 may be divided in the circumferential direction Dc or may be divided in the circumferential direction Dc and the radial direction Dr.
The main heater wires 232c constituting the respective main regions 600 are independent of each other. Thus, a different voltage can be applied to each of the main regions 600 (main heater lines 232 c). Thus, the output (generated heat) of each of the main regions 600 can be independently controlled. In other words, each main region 600 is a heater unit capable of performing temperature control independently of each other, and the main heater element 232 is an aggregate of heater units having a plurality of the heater units.
As described above, each main section 600 has one 1 st main power supply portion 232a, one 2 nd main power supply portion 232b, and one main heater wire 232c. The main heater wire 232c is 1 electrode connecting the 1 st main power supply unit 232a and the 2 nd main power supply unit 232b, and generates heat due to the flow of current. The main region 600 is a region constituted by continuous main heater wires 232c connecting the 1 st main power supply portion 232a and the 2 nd main power supply portion 232 b.
For convenience of explanation, although the radial Dr ends of the main regions 600 are shown as contacting each other in fig. 5, there is actually a gap between them (i.e., a portion where the main heater wire 232c is not provided), and the radial Dr ends of the adjacent main regions do not contact each other. The same applies to the subsequent drawings.
Fig. 6 is a plan view schematically showing an auxiliary area of an auxiliary heater element according to the embodiment.
Fig. 6 is a view of the auxiliary heater element 231 shown in fig. 3 projected on a plane perpendicular to the Z direction.
As shown in fig. 6, in this example, the auxiliary heater element 231 has a plurality of auxiliary zones 700 divided in the radial direction Dr and the circumferential direction Dc. In the auxiliary heater element 231, independent temperature control is performed in each auxiliary zone 700.
The plurality of auxiliary areas 700 have: a 1 st region 701 constituted by auxiliary regions 701a to 701f arranged in the circumferential direction Dc; and a 2 nd region 702 constituted by auxiliary regions 702a to 702f arranged in the circumferential direction Dc. That is, the main heater element 232 is divided into 2 in the radial direction Dr. The 1 st region 701 and the 2 nd region 702 are divided into 6 regions in the circumferential direction Dc. The regions are arranged in the order of the 1 st region 701 and the 2 nd region 702 from the center CT1 of the auxiliary heater element 231 toward the outside in the radial direction Dr.
The 1 st region 701 has a circular shape centered on the center CT1 in plan view. The 2 nd region 702 is located outside the 1 st region 701 in a plan view, and has a ring shape centered on the center CT 1.
The 1 st region 701 has auxiliary regions 701a to 701f. In the 1 st region 701, the auxiliary regions 701a to 701f are arranged in the order of the auxiliary region 701a, the auxiliary region 701b, the auxiliary region 701c, the auxiliary region 701d, the auxiliary region 701e, and the auxiliary region 701f in the clockwise direction. The auxiliary areas 701a to 701f constitute a part of the 1 st area 701 having a circular shape, respectively.
The 2 nd region 702 has auxiliary regions 702a to 702f. In the 2 nd area 702, the auxiliary areas 702a to 702f are arranged in the order of the auxiliary area 702a, the auxiliary area 702b, the auxiliary area 702c, the auxiliary area 702d, the auxiliary area 702e, and the auxiliary area 702f in the clockwise direction. In addition, in this example, the auxiliary area 702a is located outside the auxiliary area 701 a. The auxiliary area 702b is located outside the auxiliary area 701 b. The auxiliary area 702c is located outside the auxiliary area 701 c. The auxiliary area 702d is located outside the auxiliary area 701 d. The auxiliary area 702e is located outside the auxiliary area 701 e. The auxiliary region 702f is located outside the auxiliary region 701 f. The auxiliary areas 702a to 702f constitute a part of the annular 2 nd area 702, respectively.
The width LS1 of the radial direction Dr of the 1 st region 701 is, for example, the same as the width LS2 of the radial direction Dr of the 2 nd region 702. The width LS1 and the width LS2 may also be different.
The number of the plurality of auxiliary areas 700 is, for example, greater than the number of the plurality of main areas 600. That is, the auxiliary heater element 231 is divided into more regions than the main heater element 232, for example. The number of the plurality of auxiliary areas 700 may be the same as the number of the plurality of main areas 600 or may be less than the number of the plurality of main areas 600.
By making the number of the plurality of auxiliary regions 700 included in the auxiliary heater element 231 greater than the number of the plurality of main regions 600 included in the main heater element 232, it is possible to adjust the temperature of a region narrower than the main heater element 232 by the auxiliary heater element 231. This allows finer temperature fine adjustment by the auxiliary heater element 231, and improves uniformity of the in-plane temperature distribution of the processing object W.
The number of the auxiliary areas 700 and the shape of the auxiliary areas 700 in a plan view may be arbitrary. In addition, the auxiliary region 700 may be not divided in the circumferential direction Dc. That is, the 1 st region 701 and the 2 nd region 702 may not include the plurality of auxiliary regions 700 divided in the circumferential direction Dc.
The auxiliary heater lines 231c constituting the respective auxiliary regions 700 are independent of each other. Thus, a different voltage can be applied to each auxiliary region 700 (auxiliary heater line 231 c). Thus, the output (generated heat) of each of the auxiliary areas 700 can be independently controlled. In other words, each auxiliary area 700 is a heater unit capable of performing temperature control independently of each other, and the auxiliary heater element 231 is an aggregate of heater units having a plurality of the heater units.
As described above, each auxiliary region 700 has one 1 st auxiliary power supply portion 231a, one 2 nd auxiliary power supply portion 231b, and one auxiliary heater wire 231c. The auxiliary heater wire 231c is 1 electrode connecting the 1 st auxiliary power supply unit 231a and the 2 nd auxiliary power supply unit 231b, and generates heat due to the flow of current. The auxiliary region 700 is a region formed by the auxiliary heater wire 231c connecting the 1 st auxiliary power supply portion 231a and the 2 nd auxiliary power supply portion 231 b.
For convenience of explanation, although the ends of the radial direction Dr of each auxiliary region 700 are shown as being in contact with each other in fig. 6, there is actually a gap between these (i.e., a portion where the auxiliary heater line 231c is not provided), and the ends of the radial direction Dr of the adjacent auxiliary regions 700 are not in contact with each other. The same applies to the subsequent drawings.
Fig. 7 is a plan view schematically showing the positional relationship between the main region of the main heater element and the auxiliary region of the auxiliary heater element according to the embodiment.
Fig. 7 shows a positional relationship when the main heater element 232 shown in fig. 5 and the auxiliary heater element 231 shown in fig. 6 are viewed together in the Z direction.
In fig. 7, the main area 600 of the main heater element 232 is indicated by a two-dot chain line, and the auxiliary area 700 of the auxiliary heater element 231 is indicated by a solid line.
As shown in fig. 7, the auxiliary heater element 231 and the main heater element 232 are configured such that, for example, the center CT1 of the auxiliary heater element 231 overlaps the center CT2 of the main heater element 232 in the Z direction. In addition, the outer peripheral edge 231e of the auxiliary heater element 231 overlaps with the outer peripheral edge 232e of the main heater element 232, for example, in the Z direction. The outer peripheral edge 231e of the auxiliary heater element 231 and the outer peripheral edge 232e of the main heater element 232 may also not overlap in the Z direction.
Fig. 8 is a plan view schematically showing a part of the 1 st zone of the heater unit according to the embodiment.
A portion of zone 1 810 of heater portion 200 is shown enlarged in fig. 8. Zone 1 810 is one of a plurality of zones of the 1 st heater element included in heater section 200. The 1 st heater element may be either the auxiliary heater element 231 or the main heater element 232. That is, zone 1 810 may be either one of the auxiliary zones 700 of the auxiliary heater element 231 or one of the main zones 600 of the main heater element 232.
As shown in fig. 8, the 1 st zone 810 has a 1 st heater line 833. The 1 st region 810 further includes a 1 st power supply portion 831 (see fig. 13 to 16) and a 2 nd power supply portion 832 (see fig. 13 to 16). The 1 st heater wire 833 generates heat by the flow of current. The 1 st power feeding portion 831 and the 2 nd power feeding portion 832 feed power to the 1 st heater wire 833.
When the 1 st region 810 is one of the auxiliary regions 700, the 1 st power supply portion 831, the 2 nd power supply portion 832, and the 1 st heater wire 833 are the 1 st auxiliary power supply portion 231a, the 2 nd auxiliary power supply portion 231b, and the auxiliary heater wire 231c, respectively. When the 1 st region 810 is one of the main regions 600, the 1 st power supply portion 831, the 2 nd power supply portion 832, and the 1 st heater wire 833 are the 1 st main power supply portion 232a, the 2 nd main power supply portion 232b, and the main heater wire 232c, respectively.
The 1 st heater wire 833 has a plurality of extending portions 834 and folded portions 835 (see fig. 13 to 16). The 1 st heater wire 833 has a structure in which a plurality of extending portions 834 are connected by a folded portion 835. Thus, the 1 st heater wire 833 functions as 1 electrode connecting the 1 st power supply portion 831 and the 2 nd power supply portion 832. The 1 st heater wire 833 has a plurality of protruding portions 836 provided in the plurality of extending portions 834. The protruding portion 836 is bent from the extending portion 834 extending in the 1 st direction, and then extends in the 2 nd direction. The thickness of the 1 st heater wire 833 in the protruding portion 836 is, for example, the same as the thickness of the 1 st heater wire 833 in the extending portion 834.
The extension 834 extends along the 1 st direction. The extension 834 is aligned in the 2 nd direction. The 2 nd direction is a direction perpendicular to the 1 st direction. The plurality of protruding portions 836 protrude in the 2 nd direction, respectively. In this example, the 1 st direction is the circumferential direction Dc, and the 2 nd direction is the radial direction Dr. That is, the extending portions 834 extend along the circumferential direction Dc, and are aligned in the radial direction Dr. The protrusion 836 protrudes in the radial direction Dr.
The plurality of extensions 834 includes a 1 st extension 834a, a 2 nd extension 834b, and a 3 rd extension 834c. The 3 rd extension 834c is located between the 1 st extension 834a and the 2 nd extension 834b in the 2 nd direction. That is, the 1 st extension 834a and the 2 nd extension 834b are not adjacent to each other, for example. The 3 rd extension 834c is provided as needed and may be omitted. That is, the 1 st extension 834a and the 2 nd extension 834b may also be adjacent. Even when the 3 rd extending portion 834c is provided, a part of the 1 st extending portion 834a and a part of the 2 nd extending portion 834b may be adjacent to each other.
The plurality of protruding portions 836 includes a 1 st protruding portion 836a and a 2 nd protruding portion 836b. The 1 st protruding portion 836a is provided at the 1 st extending portion 834a, protruding toward the 2 nd protruding portion 836b. The 2 nd protrusion 836b is provided at the 2 nd extension 834b, protruding toward the 1 st protrusion 836 a.
Zone 1 810 has zone 1 opposite zone 841. The 1 st facing region 841 has the 1 st protruding portion 836a and the 2 nd protruding portion 836b arranged adjacently and facing each other. That is, at least a portion between the 1 st protruding portion 836a and the 2 nd protruding portion 836b does not include other portions (e.g., other extending portions 834, folded portions 835, etc.) of the 1 st heater line 833. Further, another portion (for example, another extending portion 834, a folded portion 835, or the like) of the 1 st heater line 833 may be included in a portion between the 1 st protruding portion 836a and the 2 nd protruding portion 836b. The 1 st opposing region 841 may be a cold spot where the temperature is relatively low in the plane of the heater portion 200.
The 1 st opposing region 841 is, for example, the inside of a region surrounded by the 1 st virtual line VL1, the 2 nd virtual line VL2, the 3 rd virtual line VL3, and the 4 th virtual line VL 4. The 1 st virtual line VL1 is a line that overlaps with one end (inner end) of the 1 st protruding portion 836a in the 2 nd direction and extends along the 1 st direction. The 2 nd virtual line VL2 is a line extending in the 1 st direction while overlapping the other end (outer end) of the 2 nd protruding portion 836b in the 2 nd direction. The 3 rd virtual line VL3 is a line extending in the 2 nd direction while overlapping one end of the 1 st protruding portion 836a in the 1 st direction and one end of the 2 nd protruding portion 836b in the 1 st direction, which is closer to the other end. The 4 th virtual line VL4 is a line extending in the 2 nd direction while overlapping with one end portion closer to one end of the other end of the 1 st protruding portion 836a in the 1 st direction and the other end of the 2 nd protruding portion 836b in the 1 st direction.
The 1 st opposing region 841 includes at least a portion of the 1 st protruding portion 836a and at least a portion of the 2 nd protruding portion 836 b. In this example, the 1 st opposing region 841 includes all of the 1 st protruding portion 836a and all of the 2 nd protruding portion 836 b. That is, one end of the 1 st protruding portion 836a in the 1 st direction overlaps one end of the 2 nd protruding portion 836b in the 2 nd direction. The other end of the 1 st protruding portion 836a in the 1 st direction overlaps the other end of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd direction.
For example, the 1 st opposing region 841 may not include the entirety of the 1 st protruding portion 836 a. Note that, for example, the 1 st opposing region 841 may not include all of the 2 nd protruding portion 836 b. That is, the 1 st end of the 1 st protruding portion 836a may not overlap with the 1 st end of the 2 nd protruding portion 836b in the 2 nd direction. The other end of the 1 st protruding portion 836a in the 1 st direction may not overlap with the other end of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd direction.
In this example, a part of the 3 rd extending portion 834c is provided at a position overlapping the 1 st protruding portion 836a and the 2 nd protruding portion 836b in the 2 nd direction. That is, a part of the 3 rd extending portion 834c is provided at a position overlapping with the 1 st opposing region 841. On the other hand, the other part of the 3 rd extending portion 834c is provided at a position not overlapping the 1 st protruding portion 836a and the 2 nd protruding portion 836b in the 2 nd direction. That is, the other part of the 3 rd extending portion 834c is provided at a position not overlapping with the 1 st opposing region 841. The 3 rd extending portion 834c may be provided at a position where the entire portion thereof does not overlap with the 1 st protruding portion 836a and the 2 nd protruding portion 836b, or may be provided at a position where a portion thereof overlaps with the 1 st protruding portion 836a and the 2 nd protruding portion 836 b.
When the 3 rd extending portion 834c or the like is arranged between the 1 st protruding portion 836a and the 2 nd protruding portion 836b in the 2 nd direction, the 1 st opposing region 841 becomes larger in size in the 2 nd direction. Further, since the 1 st protruding portion 836a and the 2 nd protruding portion 836b, which are cold spots, are disposed further apart, temperature control may become complicated. The 1 st protruding portion 836a and the 2 nd protruding portion 836b are preferably arranged so as to be as close as possible in the 2 nd direction, and the entire 3 rd extending portion 834c is preferably provided at a position where the 1 st protruding portion 836a and the 2 nd protruding portion 836b do not overlap.
Fig. 9 is a plan view schematically showing a part of the 1 st zone of the heater section according to a modification of the embodiment.
As shown in fig. 9, in this example, the 1 st direction is the circumferential direction Dc, and the 2 nd direction is the radial direction Dr. That is, the extending portions 834 extend along the circumferential direction Dc, and are aligned in the radial direction Dr. The protrusion 836 protrudes in the radial direction Dr.
The plurality of protruding portions 836 further includes a 3 rd protruding portion 836c in addition to the 1 st protruding portion 836a and the 2 nd protruding portion 836 b. The 3 rd protruding portion 836c is provided at the 1 st extending portion 834a, protruding toward the 2 nd protruding portion 836 b. The 3 rd protruding portion 836c is aligned with the 1 st protruding portion 836a in the 1 st direction.
Even in this example, zone 1 810 has zone 1 opposing zone 841. The 1 st facing region 841 has the 1 st protruding portion 836a and the 2 nd protruding portion 836b arranged adjacently and facing each other. The 1 st opposing region 841 includes a portion of the 1 st protruding portion 836a and a portion of the 2 nd protruding portion 836b. That is, one end of the 1 st protruding portion 836a in the 1 st direction does not overlap one end of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd direction. The other end of the 1 st protruding portion 836a in the 1 st direction does not overlap the other end of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd direction.
The 1 st opposing region 841 may include, for example, the entirety of the 1 st protruding portion 836 a. That is, the other end of the 1 st protruding portion 836a in the 1 st direction may overlap the other end of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd direction.
Zone 1 810 also has a 2 nd opposite zone 842. The 3 rd protruding portion 836c and the 2 nd protruding portion 836b are disposed adjacently and oppositely in the 2 nd opposing region 842. That is, at least a portion between the 3 rd protruding portion 836c and the 2 nd protruding portion 836b does not include the other portion (e.g., the other extending portion 834, the folded portion 835, or the like) of the 1 st heater line 833. Further, another portion (for example, another extending portion 834 or a folded portion 835 or the like) of the 1 st heater wire 833 may be included in a portion between the 3 rd protruding portion 836c and the 2 nd protruding portion 836b. The 2 nd opposing region 842 may be a cold spot where the temperature is relatively low in the plane of the heater portion 200.
The 2 nd opposing region 842 is, for example, the inside of a region surrounded by the 5 th virtual line VL5, the 6 th virtual line VL6, the 7 th virtual line VL7, and the 8 th virtual line VL 8. The 5 th virtual line VL5 is a line that overlaps one end (inner end) of the 3 rd protruding portion 836c in the 2 nd direction and extends along the 1 st direction. The 6 th virtual line VL6 is a line that overlaps the other end (outer end) of the 2 nd protruding portion 836b in the 2 nd direction and extends along the 1 st direction. The 7 th virtual line VL7 is a line extending in the 2 nd direction while overlapping one end of the 3 rd protruding portion 836c in the 1 st direction and one end of the 2 nd protruding portion 836b in the 1 st direction, which is closer to the other end. The 8 th virtual line VL8 is a line extending in the 2 nd direction while overlapping with one end portion closer to one end of the other end of the 3 rd protruding portion 836c in the 1 st direction and the other end of the 2 nd protruding portion 836b in the 1 st direction.
The 2 nd opposing region 842 includes at least a portion of the 3 rd protrusion 836c and at least a portion of the 2 nd protrusion 836 b. In this example, the 2 nd opposing region 842 includes a portion of the 3 rd protruding portion 836c and a portion of the 2 nd protruding portion 836 b. That is, one end of the 3 rd protruding portion 836c in the 1 st direction does not overlap one end of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd direction. The other end of the 3 rd protruding portion 836c in the 1 st direction does not overlap the other end of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd direction.
The 2 nd opposing region 842 may also include, for example, all of the 3 rd protrusion 836 c. That is, one end of the 3 rd protruding portion 836c in the 1 st direction may overlap one end of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd direction.
In this example, 2 protruding portions are further arranged on both sides of the 2 nd protruding portion 836b in the 1 st direction in the 2 nd extending portion 834 b. That is, in this example, 5 protruding portions are arranged in proximity. By disposing a large number of protruding portions in a concentrated manner, the number of cold spots in the entire surface can be reduced. Thus, the uniformity of the in-plane temperature distribution of the processing object can be improved while the complexity of temperature control is suppressed.
The 3 rd extending portion 834c is provided at a position not overlapping the 3 rd protruding portion 836c and the 2 nd protruding portion 836b in the 2 nd direction, for example. The 3 rd extending portion 834c is provided at a position where it does not overlap with the 2 nd opposing region 842, for example.
Fig. 10 is a plan view schematically showing a part of the 1 st zone of the heater section according to a modification of the embodiment.
As shown in fig. 10, in this example, the 1 st direction is the radial Dr and the 2 nd direction is the circumferential direction Dc. That is, the extending portions 834 extend in the radial direction Dr, and are arranged in the circumferential direction Dc. The protruding portion 836 protrudes in the circumferential direction Dc.
Even in this example, zone 1 810 has zone 1 opposing zone 841. The 1 st facing region 841 has the 1 st protruding portion 836a and the 2 nd protruding portion 836b arranged adjacently and facing each other. The 1 st opposing region 841 is substantially the same as the example shown in fig. 8, and therefore, a description thereof is omitted.
Fig. 11 is a plan view schematically showing a part of the 1 st zone of the heater section according to a modification of the embodiment.
As shown in fig. 11, in this example, the 1 st direction is the radial Dr and the 2 nd direction is the circumferential direction Dc. That is, the extending portions 834 extend in the radial direction Dr, and are arranged in the circumferential direction Dc. The protruding portion 836 protrudes in the circumferential direction Dc.
The plurality of protruding portions 836 further includes a 3 rd protruding portion 836c, a 4 th protruding portion 836d, and a 5 th protruding portion 836e in addition to the 1 st protruding portion 836a and the 2 nd protruding portion 836b. The 1 st protruding portion 836a, the 3 rd protruding portion 836c, and the 5 th protruding portion 836e are aligned in the 1 st direction. The 2 nd protruding portion 836b and the 4 th protruding portion 836d are aligned in the 1 st direction. The 3 rd protruding portion 836c is provided in the 1 st extending portion 834a, and protrudes toward the 2 nd protruding portion 836b and the 4 th protruding portion 836 d. The 5 th protruding portion 836e is provided at the 1 st extending portion 834a, protruding toward the 4 th protruding portion 836 d. The 4 th protruding portion 836d is provided in the 2 nd extending portion 834b, and protrudes toward the 3 rd protruding portion 836c and the 5 th protruding portion 836e.
Even in this example, the 1 st region 810 has a 1 st opposing region 841 and a 2 nd opposing region 842. The 1 st facing region 841 has the 1 st protruding portion 836a and the 2 nd protruding portion 836b arranged adjacently and facing each other. The 3 rd protruding portion 836c and the 2 nd protruding portion 836b are disposed adjacently and oppositely in the 2 nd opposing region 842. The 1 st opposing region 841 and the 2 nd opposing region 842 are substantially the same as the example shown in fig. 9, and therefore, the description thereof is omitted.
In this example, zone 1 810 also has a 3 rd opposing zone 843 and a 4 th opposing zone 844. In the 3 rd region 843, the 3 rd protruding portion 836c and the 4 th protruding portion 836d are disposed adjacently and oppositely. The 5 th protruding portion 836e and the 4 th protruding portion 836d are disposed adjacently and oppositely in the 4 th opposing region 844. The 3 rd opposing region 843 and the 4 th opposing region 844 are substantially identical to the 1 st opposing region 841 and the 2 nd opposing region 842 except for the difference in the configuration of the protruding portion 836, and therefore, the description thereof is omitted. The 3 rd and 4 th opposing regions 843 and 844 may become cold spots at which the temperature in the plane of the heater portion 200 is relatively low.
Fig. 12 is a plan view schematically showing a part of the 1 st zone of the heater section according to a modification of the embodiment.
As shown in fig. 12, zone 1 810 may also have a 5 th opposing zone 845. In the 5 th opposing region 845, for example, a corner 838 at which the 1 st heater wire 833 is bent is provided. In the 5 th opposing region 845, portions of the 1 st heater wire 833 are arranged adjacently and in an opposing manner. More specifically, in this example, the 1 st heater wire 833 has a 1 st protruding portion 836a and a 2 nd protruding portion 836b. The 1 st protruding portion 836a and the 2 nd protruding portion 836b are respectively bent. The bending direction of the 1 st protruding portion 836a is opposite to the bending direction of the 2 nd protruding portion 836b. The 1 st protruding portion 836a protrudes toward the 2 nd protruding portion 836b. Further, the 2 nd protruding portion 836b protrudes toward the 1 st protruding portion 836 a. The 1 st protruding portion 836a and the 2 nd protruding portion 836b are disposed adjacently and oppositely in the 5 th opposing region 845. The 5 th opposing region 845 may be a cold spot where the temperature is relatively low in the plane of the heater portion 200.
Fig. 13 and 14 are plan views schematically showing the positional relationship between a part of zone 1 and zone 2 of the heater unit according to embodiment 1.
In fig. 13 and 14, a part of the 1 st region 810 and the 2 nd region 910 of the heater section 200 are enlarged. Zone 2 is one of a plurality of zones of the 2 nd heater element included in heater portion 200. The 2 nd heater element is a different heater element than the 1 st heater element. The 2 nd heater element may be either the auxiliary heater element 231 or the main heater element 232. That is, the 2 nd zone 910 may be either one of the auxiliary zones 700 of the auxiliary heater element 231 or one of the main zones 600 of the main heater element 232. Region 2 overlaps region 1 in the Z direction 810.
As shown in fig. 13, the 2 nd region 910 has a 3 rd power supply portion 931, a 4 th power supply portion 932, and a 2 nd heater wire 933. The 2 nd heater line 933 generates heat by the flow of current. The 3 rd power supply portion 931 and the 4 th power supply portion 932 supply power to the 2 nd heater wire 933. In fig. 14, the 3 rd power supply portion 931, the 4 th power supply portion 932, and the 2 nd heater wire 933 are omitted.
When the 2 nd region 910 is one of the auxiliary regions 700, the 3 rd power supply portion 931, the 4 th power supply portion 932, and the 2 nd heater line 933 are the 1 st auxiliary power supply portion 231a, the 2 nd auxiliary power supply portion 231b, and the auxiliary heater line 231c, respectively. When the 2 nd region 910 is one of the main regions 600, the 3 rd power supply portion 931, the 4 th power supply portion 932, and the 2 nd heater wire 933 are the 1 st main power supply portion 232a, the 2 nd main power supply portion 232b, and the main heater wire 232c, respectively.
Hereinafter, the case where the 1 st zone 810 is one of the main zones 600 of the main heater element 232 and the 2 nd zone 910 is one of the auxiliary zones 700 of the auxiliary heater element 231 will be described as an example, but the 1 st zone 810 may be one of the auxiliary zones 700 of the auxiliary heater element 231 and the 2 nd zone 910 may be one of the main zones 600 of the main heater element 232.
As shown in fig. 14, zone 2 910 has a central region 911 and a peripheral region 912. The central region 911 is located at the center of the 2 nd region 910 in a plan view. The outer peripheral region 912 is located outside the central region 911 in a plan view. For example, when zone 2 is heated 910, the temperature of central zone 911 is higher than the temperature of peripheral zone 912.
In this example, the 2 nd region 910 is a region surrounded by the inner peripheral end 921, the outer peripheral end 922, the side ends 923, 924. The inner peripheral end 921 overlaps with one end (an end on the inner side in the radial direction Dr) in the 2 nd direction of any one of the 3 rd power feeding portion 931, the 4 th power feeding portion 932, and the 2 nd heater wire 933 constituting the 2 nd region 910. The outer peripheral end 922 overlaps the other end (the outer end in the radial direction Dr) of any one of the 3 rd power feeding portion 931, the 4 th power feeding portion 932, and the 2 nd heater wire 933 constituting the 2 nd region 910 in the 2 nd direction. In this example, the inner peripheral end 921 and the outer peripheral end 922 are circular arc-shaped.
The side end 923 is located between one end of the inner peripheral end 921 and one end of the outer peripheral end 922. The side end 923 overlaps one end (one end in the circumferential direction Dc) of any one of the 3 rd power feeding portion 931, the 4 th power feeding portion 932, and the 2 nd heater wire 933 constituting the 2 nd region 910 in the 1 st direction. The side end 924 is located between the other end of the inner peripheral end 921 and the other end of the outer peripheral end 922. The side end 924 overlaps with the other end (the other end in the circumferential direction Dc) of any one of the 3 rd power feeding portion 931, the 4 th power feeding portion 932, and the 2 nd heater wire 933 in the 1 st direction constituting the 2 nd region 910. In this example, the side ends 923 and 924 are straight.
Center region 911 includes, for example, center 915 of zone 2 910. Center 915 is an intersection point of center line RL21 in the 2 nd direction (radial Dr) between inner peripheral end 921 and outer peripheral end 922 and center line CL21 in the 1 st direction (circumferential direction Dc) between side end 923 and side end 924.
The central region 911 is a region between the center line RL22 in the 2 nd direction (radial Dr) between the inner peripheral end 921 and the center line RL21 and the center line RL23 in the 2 nd direction (radial Dr) between the outer peripheral end 922 and the center line RL21, and between the center line CL22 in the 1 st direction (circumferential Dc) between the side end 923 and the center line CL21 and the center line CL23 in the 1 st direction (circumferential Dc) between the side end 924 and the center line CL 21. That is, the central region 911 is the inside of the region surrounded by the center line RL22, the center line RL23, the center line CL22, and the center line CL 23.
The outer peripheral region 912 is a region located further outside (that is, on the opposite side of center 915) than the center lines RL22, RL23, CL22, and CL 23. That is, the outer peripheral region 912 is located between the center line RL22 and the inner peripheral end 921, between the center line RL23 and the outer peripheral end 922, between the center line CL22 and the side end 923, and between the center line CL23 and the side end 924.
In this example, the 1 st opposing region 841 of the 1 st region 810 is disposed at a position overlapping with the central region 911 of the 2 nd region 910 in the Z direction.
In the present application, the 1 st opposing region 841 "being disposed at a position overlapping the central region 911" means that at least a part of the 1 st opposing region 841 overlaps the central region 911 in the Z direction. That is, even when the 1 st opposing region 841 is disposed on the boundary of the central region 911 and the outer peripheral region 912, it is regarded that the 1 st opposing region 841 is disposed in the central region 911. In other words, when the 1 st opposing region 841 does not overlap with the central region 911 even in the Z direction, it is considered that the 1 st opposing region 841 is provided in the outer peripheral region 912. The same applies to the 2 nd relative region 842, the 3 rd relative region 843, the 4 th relative region 844, and the 5 th relative region 845.
If the number of zones of the heater section 200 is increased in order to improve the uniformity of the in-plane temperature distribution of the processing object W, the number of power supply sections, power supply terminals, and the like for supplying power to each zone is increased. If the number of power feeding portions or the like increases, the number of protruding portions 836 provided on the heater wire so as to avoid the power feeding portions or the like also increases. In general, since the current flows through the shortest distance, when the current flows in the protruding portion 836 of the heater wire, the current flows more easily in the inside of the protruding portion 836 than in the outside of the protruding portion 836. As a result, the amount of heat generated is more likely to be reduced outside the protruding portion 836 than inside the protruding portion 836. That is, the protruding portion 836 is likely to become a cold spot.
In order to improve the uniformity of the in-plane temperature distribution of the heater unit 200, for example, it is conceivable to dispose the protruding portion 836 so as to be dispersed in the plane of the heater unit 200. However, if the protruding portion 836 is disposed in a dispersed manner in the surface of the heater portion 200, there is a possibility that the cold spots are dispersed, and temperature control becomes complicated. On the other hand, if the protruding portions 836 are intensively arranged in the plane of the heater portion 200, there is a possibility that the temperature at the cold spot further decreases and the uniformity of the in-plane temperature distribution of the heater portion 200 decreases.
In contrast, according to the embodiment, the 1 st opposing region 841 of the 1 st region 810 in which the 1 st protruding portion 836a and the 2 nd protruding portion 836b are adjacently and oppositely arranged (i.e., the protruding portions 836 are concentrated) is provided at a position where the central region 911, which is more likely to be higher in temperature than the outer peripheral region 912 in the 2 nd region 910, overlaps. This suppresses the occurrence of the scattering of the cold spots, and also causes the 1 st opposing region 841 of the 1 st region 810, which is the cold spot, to overlap with the center region 911 of the 2 nd region 910, which is the hot spot, thereby suppressing a significant decrease in temperature at the cold spots. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object W can be improved while the complexity of temperature control is suppressed.
At least one of the 2 nd opposed region 842, the 3 rd opposed region 843, the 4 th opposed region 844, and the 5 th opposed region 845 is preferably disposed at a position overlapping the central region 911 of the 2 nd region 910 in the Z-direction. Since these regions are also likely to be cold spots similarly to the 1 st opposing region 841, by overlapping the central region 911 of the 2 nd region 910, which is a hot spot, a large decrease in temperature at the cold spots can be suppressed.
Fig. 15 is a plan view schematically showing a 1 st region of the heater unit according to embodiment 2.
As shown in fig. 15, the 1 st region 810 has a central region 811 and a peripheral region 812. The central region 811 is located at the center of the 1 st region 810 in plan view. The outer peripheral region 812 is located outside the central region 811 in a plan view. For example, when zone 1 810 is heated, the temperature of central zone 811 is higher than the temperature of peripheral zone 812.
In this example, the 1 st region 810 is a region surrounded by the inner peripheral end 821, the outer peripheral end 822, the side end 823, and the side end 824. The inner peripheral end 821 overlaps one end (an end on the inner side in the radial direction Dr) in the 2 nd direction of any one of the 1 st power feeding portion 831, the 2 nd power feeding portion 832, and the 1 st heater wire 833 constituting the 1 st region 810. The outer peripheral end 822 overlaps with the other end (the outer end in the radial direction Dr) of any one of the 1 st power feeding portion 831, the 2 nd power feeding portion 832, and the 1 st heater wire 833 in the 2 nd direction constituting the 1 st region 810. In this example, the inner peripheral end 821 and the outer peripheral end 822 are arcuate.
The side end 823 is located between one end of the inner peripheral end 821 and one end of the outer peripheral end 822. The side end 823 overlaps with one end (one end in the circumferential direction Dc) in the 1 st direction of any one of the 1 st power feeding portion 831, the 2 nd power feeding portion 832, and the 1 st heater wire 833 constituting the 1 st region 810. The side end 824 is located between the other end of the inner peripheral end 821 and the other end of the outer peripheral end 822. The side end 824 overlaps with the other end (the other end in the circumferential direction Dc) of any one of the 1 st power feeding portion 831, the 2 nd power feeding portion 832, and the 1 st heater wire 833 in the 1 st direction constituting the 1 st region 810. In this example, the side end 823 and the side end 824 are straight.
The central region 811 includes, for example, the center 815 of the 1 st region 810. The center 815 is an intersection point of a center line RL11 of the radial direction Dr between the inner peripheral end 821 and the outer peripheral end 822 and a center line CL11 of the circumferential direction Dc between the side end 823 and the side end 824.
The central region 811 is a region between the center line CL12 in the 2 nd direction (radial Dr) between the inner peripheral end 821 and the center line RL11 and the center line RL13 in the 2 nd direction (radial Dr) between the outer peripheral end 822 and the center line RL11, and between the center line CL12 in the 1 st direction (circumferential Dc) between the side end 823 and the center line CL11 and the center line CL13 in the 1 st direction (circumferential Dc) between the side end 824 and the center line CL 11. That is, the central region 811 is the inside of the region surrounded by the center line RL12, the center line RL13, the center line CL12, and the center line CL 13.
The outer peripheral region 812 is a region located further outside (that is, on the opposite side of the center 815) than the center lines RL12, RL13, CL12, and CL 13. That is, outer peripheral region 812 is located between centerline RL12 and inner peripheral end 821, between centerline RL13 and outer peripheral end 822, between centerline CL12 and side end 823, and between centerline CL13 and side end 824.
In this example, the 1 st opposing region 841 of the 1 st region 810 is disposed in the central region 811 of the 1 st region 810.
In the present specification, the 1 st opposing region 841 "being provided in the central region 811" means that at least a part of the 1 st opposing region 841 overlaps the central region 811 in the Z direction. That is, even when the 1 st opposing region 841 is disposed on the boundary of the central region 811 and the outer peripheral region 812, it is regarded that the 1 st opposing region 841 is disposed in the central region 811. In other words, when the 1 st opposing region 841 does not overlap with the central region 811 even in a part thereof in the Z direction, it is regarded that the 1 st opposing region 841 is provided in the outer peripheral region 812. The same applies to the 2 nd counter region 842, the 3 rd counter region 843, the 4 th counter region 844, and the 5 th counter region 845.
According to the embodiment, the 1 st opposing region 841 of the 1 st region 810 in which the 1 st protruding portion 836a and the 2 nd protruding portion 836b are adjacently and oppositely arranged (i.e., the protruding portions 836 are concentrated) is provided in the center region 811 in which the temperature is more likely to be higher than in the outer peripheral region 812 in the 1 st region 810. Accordingly, the 1 st opposing region 841 of the 1 st region 810, which is the cold spot, is provided in the central region 811 of the 1 st region 810, which is the hot spot, while suppressing the occurrence of scattering of the cold spot, whereby the temperature can be suppressed from being greatly lowered at the cold spot. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object W can be improved while the complexity of temperature control is suppressed.
Preferably, at least one of the 2 nd opposed region 842, the 3 rd opposed region 843, the 4 th opposed region 844, and the 5 th opposed region 845 is provided in the central region 811 of the 1 st region 810. Since these regions are also likely to be cold spots similarly to the 1 st opposing region 841, the arrangement in the central region 811 of the 1 st region 810, which is a hot spot, can suppress a significant decrease in temperature at the cold spots.
In this example, the heater unit 200 includes: a 1 st heater element comprising a 1 st zone 810; a bypass layer 250 that is a power supply path to the 1 st heater element (see fig. 3 and 4); and a 1 st power supply terminal 281 and a 2 nd power supply terminal 282 electrically connected to the bypass layer 250. The 1 st power supply terminal 281 and the 2 nd power supply terminal 282 are, for example, a pair of power supply terminals 280 connected to the same bypass layer 250 among the power supply terminals 280. The 1 st power supply terminal 281 and the 2 nd power supply terminal 282 are, for example, one of the above power supply terminals 280a to 280j, respectively.
The 1 st power supply portion 831 is provided at a position not overlapping the 1 st power supply terminal 281 in the Z direction. The 1 st power supply portion 831 is electrically connected to the 1 st power supply terminal 281 via the bypass layer 250. The 2 nd power supply portion 832 is provided at a position not overlapping the 2 nd power supply terminal 282 in the Z direction. The 2 nd power supply 832 is electrically connected to the 2 nd power supply terminal 282 through the bypass layer 250.
The 1 st opposing region 841 is provided at a position overlapping at least one of the 1 st power supply terminal 281 and the 2 nd power supply terminal 282 in the Z direction. The 1 st opposing region 841 is provided, for example, at a position overlapping the 1 st power supply terminal 281 and the 2 nd power supply terminal 282 in the Z direction. The 1 st opposing region 841 may be provided at a position overlapping with the 1 st power supply terminal 281 and not overlapping with the 2 nd power supply terminal 282, for example, in the Z direction. The 1 st opposing region 841 may be provided at a position overlapping with the 2 nd power supply terminal 282 and not overlapping with the 1 st power supply terminal 281, for example, in the Z direction.
In the present specification, the 1 st opposing region 841 "being disposed at a position overlapping the 1 st power supply terminal 281" means that at least a part of the 1 st opposing region 841 overlaps the 1 st power supply terminal 281 in the Z direction. That is, even when the 1 st opposing region 841 is provided on the boundary between the 1 st power supply terminal 281 and the other portion, it is regarded that the 1 st opposing region 841 is provided at a position overlapping with the 1 st power supply terminal 281. In other words, when the 1 st opposing region 841 does not overlap with a part of the 1 st power supply terminal 281 in the Z direction, it is regarded that the 1 st opposing region 841 is provided at a position that does not overlap with the 1 st power supply terminal 281. The same applies to the 2 nd power supply terminal 282. The same applies to the 2 nd counter region 842, the 3 rd counter region 843, the 4 th counter region 844, and the 5 th counter region 845.
Even when the refrigerant flow path 301 for flowing the cooling medium is provided in the base plate 300, the refrigerant flow path 301 is not provided at the position where the power supply terminal 280 for supplying power to the bypass layer 250 is provided. Therefore, the position where the power supply terminal 280 is provided is more difficult to be cooled than other positions, and is likely to be a hot spot.
According to the embodiment, the 1 st facing region 841 of the 1 st region 810 in which the 1 st protruding portion 836a and the 2 nd protruding portion 836b are adjacently and oppositely arranged (i.e., the protruding portions 836 are concentrated) is provided at a position overlapping at least one of the 1 st power supply terminal 281 and the 2 nd power supply terminal 282. This suppresses the occurrence of the scattering of the cold spots, and also causes the 1 st opposing region 841 of the 1 st region 810, which is the cold spot, to overlap the 1 st power supply terminal 281 or the 2 nd power supply terminal 282, which is the hot spot, whereby the temperature can be suppressed from being greatly reduced at the cold spots. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object W can be improved while the complexity of temperature control is suppressed.
At least one of the 2 nd facing region 842, the 3 rd facing region 843, the 4 th facing region 844, and the 5 th facing region 845 is preferably disposed at a position overlapping with at least one of the 1 st power supply terminal 281 and the 2 nd power supply terminal 282 in the Z direction. Since these regions are also likely to be cold spots similarly to the 1 st opposing region 841, the temperature can be prevented from being greatly reduced at the cold spots by overlapping the 1 st power supply terminal 281 or the 2 nd power supply terminal 282, which is a hot spot.
Fig. 16 is a plan view schematically showing a 1 st region of a heater unit according to embodiment 3.
As shown in FIG. 16, in this example zone 1 810 includes the outer periphery 810e of the 1 st heater element. That is, in this example, zone 1 810 is located at the outermost periphery of the 1 st heater element. When zone 1 810 is one of the auxiliary zones 700, the outer periphery 810e is the outer periphery 231e of the auxiliary heater element 231. When zone 1 810 is one of the primary zones 600, the outer periphery 810e is the outer periphery 232e of the primary heater element 232.
Zone 1 810 has an inner peripheral portion 851 and an outer peripheral portion 852. The inner peripheral portion 851 is a portion located closer to one side (inner side in the radial direction Dr) in the 2 nd direction than the center line RL11 in the 2 nd direction (radial direction Dr). The outer peripheral portion 852 is a portion located closer to the other side (outside of the radial direction Dr) in the 2 nd direction than the center line RL11 in the 2 nd direction (radial direction Dr). The outer peripheral portion 852 includes the outer peripheral edge 810e of the 1 st heater element. The centerline RL11 in the 2 nd direction (radial Dr) passes through the center of the 2 nd direction (radial Dr) between the inner peripheral end 821 and the outer peripheral end 822 of the 1 st region 810. That is, the centerline RL11 in the 2 nd direction (radial Dr) bisects the 1 st region 810 in the 2 nd direction (radial Dr). For example, when the 1 st zone 810 is heated, the temperature of the inner peripheral portion 851 is higher than the temperature of the outer peripheral portion 852.
In this example, the 1 st opposing region 841 of the 1 st region 810 is provided in the inner peripheral portion 851 of the 1 st region 810.
In the present specification, the 1 st opposing region 841 "provided in the inner peripheral portion 851" means that at least a part of the 1 st opposing region 841 overlaps the inner peripheral portion 851 in the Z direction. That is, even when the 1 st opposing region 841 is provided on the boundary between the inner peripheral portion 851 and the outer peripheral portion 852, it is regarded that the 1 st opposing region 841 is provided on the inner peripheral portion 851. In other words, when the 1 st opposing region 841 does not overlap with the inner peripheral portion 851 even in a part thereof in the Z direction, it is regarded that the 1 st opposing region 841 is provided in the outer peripheral portion 852. The same applies to the 2 nd counter region 842, the 3 rd counter region 843, the 4 th counter region 844, and the 5 th counter region 845.
According to the embodiment, the 1 st opposing region 841 of the 1 st region 810 in which the 1 st protruding portion 836a and the 2 nd protruding portion 836b are adjacently and oppositely arranged (i.e., the protruding portions 836 are concentrated) is provided in the inner peripheral portion 851 in which the temperature is more easily increased in the 1 st region 810 than in the outer peripheral portion 852. Accordingly, the 1 st opposing region 841 of the 1 st region 810, which is the cold spot, is provided in the inner peripheral portion 851 of the 1 st region 810, which is the hot spot, while suppressing the occurrence of the scattering of the cold spot, whereby the temperature can be suppressed from being greatly lowered at the cold spot. That is, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object W can be improved while the complexity of temperature control is suppressed.
At least one of the 2 nd opposing region 842, the 3 rd opposing region 843, the 4 th opposing region 844, and the 5 th opposing region 845 is preferably provided in the inner peripheral portion 851 of the 1 st region 810. Since these regions are also likely to be cold spots similarly to the 1 st opposing region 841, the arrangement in the inner peripheral portion 851 of the 1 st region 810, which is a hot spot, can suppress a significant decrease in temperature at the cold spots.
The plurality of zones of the 1 st heater element comprising the 1 st zone 810 are preferably divided in the radial direction Dr, the 1 st direction being the circumferential direction Dc. This makes it possible to efficiently control the in-plane temperature of the processing object W.
The zones of the 1 st heater element comprising zone 810 are preferably divided in the radial direction Dr, the 1 st direction being the radial direction Dr. This makes it possible to efficiently control the in-plane temperature of the processing object W.
As described above, the 1 st protruding portion 836a and the 2 nd protruding portion 836b are disposed adjacently and oppositely. Therefore, the shortest distance between the 1 st extending portion 834a and the 2 nd extending portion 834b may be larger than the shortest distance when the 1 st protruding portion 836a and the 2 nd protruding portion 836b are not formed. Thus, it is preferable that the plurality of extensions 834 of the 1 st region 810 have a 3 rd extension 834c located between the 1 st extension 834a and the 2 nd extension 834b in the 2 nd direction. Thus, the 3 rd extending portion 834c can prevent the gap between the 1 st extending portion 834a and the 2 nd extending portion 834b from becoming too large. In this case, the 3 rd extending portion 834c is preferably provided at a position not overlapping the 1 st protruding portion 836a and the 2 nd protruding portion 836b in the 2 nd direction. Thus, the range of the 1 st opposing region 841 can be made smaller. Thus, uniformity of the in-plane temperature distribution of the processing object W can be improved.
In addition, the plurality of protruding portions 836 of the 1 st region 810 may have a 3 rd protruding portion 836c provided at the 1 st extending portion 834a and protruding toward the 2 nd protruding portion 836b. At this time, the 3 rd protruding portion 836c and the 2 nd protruding portion 836b are preferably disposed adjacently and oppositely. As described above, by disposing the region (the 2 nd facing region 842) in which the 2 nd protruding portion 836b and the 3 rd protruding portion 836c are concentrated in the vicinity of the 1 st facing region 841, the number of cold spots in the entire surface can be reduced. Thus, the uniformity of the in-plane temperature distribution of the processing object W can be improved while the complexity of temperature control is suppressed.
Fig. 17 is a plan view schematically showing a 1 st region of a heater unit according to embodiment 4.
In this example, the heater section 200 has: a 1 st heater element comprising a 1 st zone 810; a 2 nd heater element comprising a 2 nd zone 910; a bypass layer 250 that is a power supply path to the 1 st heater element and the 2 nd heater element (see fig. 3 and 4); and a 1 st power supply terminal 281, a 2 nd power supply terminal 282, a 3 rd power supply terminal 283, and a 4 th power supply terminal 284, electrically connected to the bypass layer 250. The 1 st power supply terminal 281 and the 2 nd power supply terminal 282 are, for example, a pair of power supply terminals 280 connected to the same bypass layer 250 among the power supply terminals 280. The 3 rd power supply terminal 283 and the 4 th power supply terminal 284 are, for example, a pair of power supply terminals 280 connected to the same bypass layer 250 among the power supply terminals 280. The 1 st power supply terminal 281, the 2 nd power supply terminal 282, the 3 rd power supply terminal 283, and the 4 th power supply terminal 284 are, for example, one of the above power supply terminals 280a to 280j, respectively.
The 1 st power supply portion 831 of the 1 st region 810 is provided at a position not overlapping the 1 st power supply terminal 281 in the Z direction. The 1 st power supply portion 831 is electrically connected to the 1 st power supply terminal 281 via the bypass layer 250. The 2 nd power supply portion 832 of the 1 st region 810 is provided at a position not overlapping with the 2 nd power supply terminal 282 in the Z direction. The 2 nd power supply 832 is electrically connected to the 2 nd power supply terminal 282 through the bypass layer 250.
The 3 rd power supply portion 931 of the 2 nd region 910 is provided at a position not overlapping with the 3 rd power supply terminal 283 in the Z direction. The 3 rd power supply portion 931 is electrically connected to the 3 rd power supply terminal 283 via the bypass layer 250. The 4 th power supply portion 932 of the 2 nd region 910 is provided at a position not overlapping the 4 th power supply terminal 284 in the Z direction. The 4 th power supply part 932 is electrically connected to the 4 th power supply terminal 284 via the bypass layer 250.
In this example, at least one of the 3 rd power supply terminal 283 and the 4 th power supply terminal 284 is provided at a position overlapping with a virtual line segment VLS connecting the center CT3 of the 1 st power supply portion 831 and the center CT4 of the 2 nd power supply portion 832 in the Z direction.
In the present specification, the term "the 3 rd power supply terminal 283 is disposed at a position overlapping the virtual line segment VLS" means that at least a part of the 3 rd power supply terminal 283 overlaps the virtual line segment VLS in the Z direction. That is, it is considered that the 3 rd power supply terminal 283 is provided at a position overlapping with the virtual line segment VLS not only when the 3 rd power supply terminal 283 is located at the position P1 but also when the 3 rd power supply terminal 283 is located at the position P2 or when the 3 rd power supply terminal 283 is located at the position P3. When the 3 rd power supply terminal 283 is located at the position P1, the center CT5 of the 3 rd power supply terminal 283 overlaps the virtual line segment VLS. When the 3 rd power supply terminal 283 is located at the position P2 or the position P3, the center CT5 of the 3 rd power supply terminal 283 does not overlap with the virtual line segment VLS. The same applies to the 4 th power supply terminal 284. When the 4 th power supply terminal 284 is positioned at the position P1, the center CT6 of the 4 th power supply terminal 284 overlaps with the virtual line segment VLS. When the 4 th power supply terminal 284 is located at the position P2 or the position P3, the center CT6 of the 4 th power supply terminal 284 does not overlap with the virtual line segment VLS.
According to the embodiment, at least one of the 3 rd power supply terminal 283 and the 4 th power supply terminal 284 which supply power to the 2 nd heater element through the bypass layer 250 is provided at a position overlapping with the virtual line segment VLS connecting the center CT3 of the 1 st power supply portion 831 and the center CT4 of the 2 nd power supply portion 832 which supply power to the 1 st heater line 833. Thus, by providing the 3 rd power supply terminal 283 or the 4 th power supply terminal 284 which is a hot spot between the 1 st power supply portion 831 and the 2 nd power supply portion 832 which are cold spots, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object W can be improved while the complexity of temperature control is suppressed.
It is preferable that at least one of the center CT5 of the 3 rd power supply terminal 283 and the center CT6 of the 4 th power supply terminal 284 is provided at a position overlapping with the virtual line segment VLS. That is, at least one of the center CT5 of the 3 rd power supply terminal 283 and the 4 th power supply terminal 284 is preferably provided at the position P1. This can improve the uniformity of the in-plane temperature distribution of the processing object W.
In this example, zone 1 810 includes an outer periphery 810e of the 1 st heater element. That is, in this example, zone 1 810 is located at the outermost periphery of the 1 st heater element. In this example, the 1 st region 810 has an inner peripheral portion 851 and an outer peripheral portion 852. Since the inner and outer peripheral portions 851, 852 are substantially the same as the inner and outer peripheral portions 851, 852 in fig. 16 described above, the description thereof will be omitted.
In this example, both the 1 st power supply portion 831 and the 2 nd power supply portion 832 are provided in the inner peripheral portion 851 of the 1 st region 810. When the 1 st zone 810 is located at the outermost Zhou Bushi of the 1 st heater element, at least one of the 1 st power supply portion 831 and the 2 nd power supply portion 832 is preferably provided at the inner peripheral portion 851 of the 1 st zone 810.
In the present specification, the 1 st power feeding portion 831 "is provided at the inner peripheral portion 851" and means that at least a part of the 1 st power feeding portion 831 overlaps the inner peripheral portion 851 in the Z direction. That is, even when the 1 st power feeding portion 831 is provided on the boundary between the inner peripheral portion 851 and the outer peripheral portion 852, it is regarded that the 1 st power feeding portion 831 is provided on the inner peripheral portion 851. In other words, when the 1 st power feeding portion 831 does not overlap with the inner peripheral portion 851 even in a part in the Z direction, it is regarded that the 1 st power feeding portion 831 is provided in the outer peripheral portion 852. The same applies to the 2 nd power supply unit 832, the 3 rd power supply unit 931, and the 4 th power supply unit 932.
According to the embodiment, when the 1 st zone 810 includes the outer peripheral edge 810e of the 1 st heater element (i.e., in the 1 st zone 810 located at the outermost peripheral portion of the 1 st heater element), at least one of the 1 st power feeding portion 831 and the 2 nd power feeding portion 832 is provided in the inner peripheral portion 851 of the 1 st zone 810 where the temperature is more easily increased than the outer peripheral portion 852. By providing the 1 st power supply portion 831 or the 2 nd power supply portion 832 which is a cold spot in the inner peripheral portion 851 of the 1 st zone 810 which is a hot spot, a significant decrease in temperature at the cold spot can be suppressed. That is, temperature unevenness can be offset. Thus, uniformity of the in-plane temperature distribution of the processing object W can be improved.
Fig. 18 is a plan view schematically showing a 1 st region of the heater unit according to embodiment 5.
As shown in fig. 18, in this example, the 1 st power supply portion 831 and the 2 nd power supply portion 832 are provided in the central region 811 of the 1 st region 810. Except for this, the first region is substantially the same as the first region of the heater section according to embodiment 4 shown in fig. 17.
More specifically, zone 1 810 has a central region 811 and a peripheral region 812. In this example, the central region 811 is a region between the center line RL12 and the center line RL 13. That is, the central region 811 is the inside of the region surrounded by the center lines RL12 and RL 13. Outer peripheral region 812 is located between centerline RL12 and inner peripheral end 821 and between centerline RL13 and outer peripheral end 822. Otherwise, the central region 811 and the peripheral region 812 are substantially the same as those described above with reference to fig. 15.
In this example, both the 1 st power supply portion 831 and the 2 nd power supply portion 832 are provided in the central region 811 of the 1 st region 810. At least one of the 1 st power supply portion 831 and the 2 nd power supply portion 832 is preferably provided in the central region 811 of the 1 st region 810.
In the present specification, the 1 st power feeding portion 831 "being provided in the central region 811" means that at least a part of the 1 st power feeding portion 831 overlaps the central region 811 in the Z direction. That is, even when the 1 st power supply portion 831 is provided on the boundary of the central region 811 and the outer peripheral region 812, it is regarded that the 1 st power supply portion 831 is provided in the central region 811. In other words, when the 1 st power supply portion 831 does not overlap with the central region 811 even in a part thereof in the Z direction, it is regarded that the 1 st power supply portion 831 is provided in the outer peripheral region 812. The same applies to the 2 nd power supply unit 832, the 3 rd power supply unit 931, and the 4 th power supply unit 932.
According to the embodiment, at least one of the 1 st power feeding portion 831 and the 2 nd power feeding portion 832 is provided in the central region 811 of the 1 st region 810, which is more likely to be higher in temperature than the outer peripheral region 812. By this, the 1 st power supply portion 831 or the 2 nd power supply portion 832 which is the cold spot overlaps the central region 811 of the 1 st zone 810 which is the hot spot, and thus, a significant decrease in temperature at the cold spot can be suppressed. That is, temperature unevenness can be offset. Thus, uniformity of the in-plane temperature distribution of the processing object W can be improved.
Even in this example, at least one of the 3 rd power supply terminal 283 and the 4 th power supply terminal 284 for supplying power to the 2 nd heater element via the bypass layer 25 is provided at a position overlapping with the virtual line segment VLS connecting the center CT3 of the 1 st power supply portion 831 and the center CT4 of the 2 nd power supply portion 832 for supplying power to the 1 st heater line 833. Thus, by providing the 3 rd power supply terminal 283 or the 4 th power supply terminal 284 which is a hot spot between the 1 st power supply portion 831 and the 2 nd power supply portion 832 which are cold spots, temperature unevenness can be offset. Thus, the uniformity of the in-plane temperature distribution of the processing object W can be improved while the complexity of temperature control is suppressed.
Embodiments may further include the following configurations.
Constitution 1
An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater part is provided with a 1 st heater element and a 2 nd heater element,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 2 nd heater element is disposed between the 1 st main face and the 1 st heater element or between the 1 st heater element and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided at the plurality of extending portions to protrude in the 2 nd direction,
The plurality of extending parts are provided with a 1 st extending part and a 2 nd extending part,
the plurality of protrusions have: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding part arranged on the 2 nd extending part,
the 1 st projection projects toward the 2 nd projection,
the 2 nd protrusion protrudes toward the 1 st protrusion,
the 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the 2 nd heater element has a plurality of zones,
the plurality of zones of the 2 nd heater element have a 2 nd zone,
the zone 2 has: a 2 nd heater wire which generates heat by the flow of current; and a 3 rd power supply unit and a 4 th power supply unit for supplying power to the 2 nd heater wire,
the zone 2 has: a central region located at the center of the 2 nd region when viewed in a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region,
the 1 st opposing region is provided at a position overlapping the central region in the Z direction.
Constitution 2
An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
A base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has a 1 st heater element,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided at the plurality of extending portions to protrude in the 2 nd direction,
the plurality of extending parts are provided with a 1 st extending part and a 2 nd extending part,
the plurality of protrusions have: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding part arranged on the 2 nd extending part,
the 1 st projection projects toward the 2 nd projection,
the 2 nd protrusion protrudes toward the 1 st protrusion,
The 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the 1 st zone has: a central region located at the center of the 1 st region when viewed along a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region,
the 1 st opposing region is disposed in the central region.
Constitution 3
An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has a 1 st heater element,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 1 st heater element has a plurality of zones divided in the radial direction,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
The 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided at the plurality of extending portions to protrude in the 2 nd direction,
the plurality of extending parts are provided with a 1 st extending part and a 2 nd extending part,
the plurality of protrusions have: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding part arranged on the 2 nd extending part,
the 1 st projection projects toward the 2 nd projection,
the 2 nd protrusion protrudes toward the 1 st protrusion,
the 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the zone 1 contains the outer periphery of the zone 1 heater element,
the 1 st zone has: an inner peripheral portion located radially inward of a radial center line bisecting the 1 st region in a radial direction; and an outer peripheral portion which is located radially outward of the radial center line and includes the outer peripheral edge,
the 1 st opposing region is provided at the inner peripheral portion.
Constitution 4
The electrostatic chuck according to any one of 1 to 3,
The plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is the circumferential direction.
Constitution 5
The electrostatic chuck according to any one of 1 to 3,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is radial.
Constitution 6
The electrostatic chuck according to any one of 1 to 5, characterized in that,
the plurality of extensions also has a 3 rd extension located between the 1 st extension and the 2 nd extension in the 2 nd direction,
the 3 rd extension portion is provided at a position in the 2 nd direction that does not overlap the 1 st projection portion and the 2 nd projection portion.
Constitution 7
The electrostatic chuck according to any one of 1 to 6, characterized in that,
the plurality of protruding portions further have a 3 rd protruding portion provided at the 1 st extending portion, protruding toward the 2 nd protruding portion,
the 3 rd projection is disposed adjacent to and opposite to the 2 nd projection.
Constitution 8
An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate;
And a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has a 1 st heater element,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st heater wire has a 1 st protruding part and a 2 nd protruding part which are bent,
the bending direction of the 1 st protruding part is opposite to the bending direction of the 2 nd protruding part,
the 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the 1 st zone has: a central region located at the center of the 1 st region when viewed along a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region,
the 1 st opposing region is disposed in the central region.
Constitution 9
An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
A base plate having an upper surface on the ceramic dielectric substrate side, a lower surface on the opposite side of the upper surface, and a coolant flow path for flowing a cooling medium, and supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has: a 1 st heater element; a bypass layer that is a power supply path to the 1 st heater element; and a 1 st power supply terminal and a 2 nd power supply terminal electrically connected to the bypass layer,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st power supply part is arranged at a position which is not overlapped with the 1 st power supply terminal in the Z direction vertical to the 1 st main surface, and is electrically connected with the 1 st power supply terminal by the bypass layer,
the 2 nd power supply part is arranged at a position which is not overlapped with the 2 nd power supply terminal in the Z direction, is electrically connected with the 2 nd power supply terminal by the bypass layer,
The 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided at the plurality of extending portions to protrude in the 2 nd direction,
the plurality of extending parts are provided with a 1 st extending part and a 2 nd extending part,
the plurality of protrusions have: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding part arranged on the 2 nd extending part,
the 1 st projection projects toward the 2 nd projection,
the 2 nd protrusion protrudes toward the 1 st protrusion,
the 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the 1 st opposing region is provided at a position overlapping at least one of the 1 st power supply terminal and the 2 nd power supply terminal in the Z direction.
Construction 10
The electrostatic chuck according to 9, characterized in that,
the 1 st zone has: a central region located at the center of the 1 st region when viewed along the Z direction; and an outer peripheral region located outside the central region,
the 1 st opposing region is disposed in the central region.
Constitution 11
The electrostatic chuck according to 9 or 10, characterized in that,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is the circumferential direction.
Composition 12
The electrostatic chuck according to 9 or 10, characterized in that,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is radial.
Constitution 13
The electrostatic chuck according to any one of 9 to 12, characterized in that,
the plurality of extensions also has a 3 rd extension located between the 1 st extension and the 2 nd extension in the 2 nd direction,
the 3 rd extension portion is provided at a position in the 2 nd direction that does not overlap the 1 st projection portion and the 2 nd projection portion.
Constitution 14
The electrostatic chuck according to any one of 9 to 13,
the plurality of protruding portions further have a 3 rd protruding portion provided at the 1 st extending portion, protruding toward the 2 nd protruding portion,
the 3 rd projection is disposed adjacent to and opposite to the 2 nd projection.
Constitution 15
An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
A base plate having an upper surface on the ceramic dielectric substrate side, a lower surface on the opposite side of the upper surface, and a coolant flow path for flowing a cooling medium, and supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has: a 1 st heater element; a 2 nd heater element; a bypass layer that is a power supply path to the 1 st heater element and the 2 nd heater element; and a 1 st power supply terminal, a 2 nd power supply terminal, a 3 rd power supply terminal, a 4 th power supply terminal, electrically connected to the bypass layer,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 2 nd heater element is disposed between the 1 st main face and the 1 st heater element or between the 1 st heater element and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st power supply part is arranged at a position which is not overlapped with the 1 st power supply terminal in the Z direction vertical to the 1 st main surface, and is electrically connected with the 1 st power supply terminal by the bypass layer,
The 2 nd power supply part is arranged at a position which is not overlapped with the 2 nd power supply terminal in the Z direction, is electrically connected with the 2 nd power supply terminal by the bypass layer,
the 2 nd heater element has a plurality of zones,
the plurality of zones of the 2 nd heater element have a 2 nd zone,
the zone 2 has: a 2 nd heater wire which generates heat by the flow of current; and a 3 rd power supply unit and a 4 th power supply unit for supplying power to the 2 nd heater wire,
the 3 rd power supply part is arranged at a position which is not overlapped with the 3 rd power supply terminal in the Z direction, is electrically connected with the 3 rd power supply terminal by the bypass layer,
the 4 th power supply part is arranged at a position which is not overlapped with the 4 th power supply terminal in the Z direction, is electrically connected with the 4 th power supply terminal by the bypass layer,
at least one of the 3 rd power supply terminal and the 4 th power supply terminal is provided at a position overlapping with a virtual line segment connecting the center of the 1 st power supply unit and the center of the 2 nd power supply unit in the Z direction.
Constitution 16
The electrostatic chuck according to 15, wherein at least one of the center of the 3 rd power supply terminal and the center of the 4 th power supply terminal is disposed at a position overlapping the virtual line segment.
Constitution 17
The electrostatic chuck according to 15 or 16, characterized in that,
the zone 1 has; a central region located at the center of the 1 st region when viewed along the Z direction; and an outer peripheral region located outside the central region,
at least any one of the 1 st power supply unit and the 2 nd power supply unit is provided in the central region.
Constitution 18
The electrostatic chuck according to 15 or 16, characterized in that,
the zone 1 contains the outer periphery of the zone 1 heater element,
the 1 st zone has: an inner peripheral portion located radially inward of a radial center line bisecting the 1 st region in a radial direction; and an outer peripheral portion which is located radially outward of the radial center line and includes the outer peripheral edge,
at least any one of the 1 st power supply portion and the 2 nd power supply portion is provided in the inner peripheral portion.
As described above, according to the embodiments, an electrostatic chuck is provided that can improve uniformity of in-plane temperature distribution of a processing object while suppressing complexity of temperature control.
The embodiments of the present invention have been described above. However, the present invention is not limited to the above description. As for the foregoing embodiments, the invention in which appropriate design changes are added by those skilled in the art is also included in the scope of the present invention as long as the features of the present invention are provided. For example, the shape, size, material, arrangement, and arrangement of the elements of the electrostatic chuck are not limited to those illustrated, and may be changed as appropriate.
The elements of the embodiments described above may be combined as long as the technology is technically feasible, and the combination of these techniques is also included in the scope of the present invention as long as the features of the present invention are included.
Claims (26)
1. An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater part is provided with a 1 st heater element and a 2 nd heater element,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 2 nd heater element is disposed between the 1 st main face and the 1 st heater element or between the 1 st heater element and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
The 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided at the plurality of extending portions to protrude in the 2 nd direction,
the plurality of extending parts are provided with a 1 st extending part and a 2 nd extending part,
the plurality of protrusions have: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding part arranged on the 2 nd extending part,
the 1 st projection projects toward the 2 nd projection,
the 2 nd protrusion protrudes toward the 1 st protrusion,
the 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the 2 nd heater element has a plurality of zones,
the plurality of zones of the 2 nd heater element have a 2 nd zone,
the zone 2 has: a 2 nd heater wire which generates heat by the flow of current; and a 3 rd power supply unit and a 4 th power supply unit for supplying power to the 2 nd heater wire,
the zone 2 has: a central region located at the center of the 2 nd region when viewed in a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region,
The 1 st opposing region is provided at a position overlapping the central region in the Z direction.
2. The electrostatic chuck according to claim 1, wherein,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is the circumferential direction.
3. The electrostatic chuck according to claim 1, wherein,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is radial.
4. The electrostatic chuck according to claim 1, wherein,
the plurality of extensions also has a 3 rd extension located between the 1 st extension and the 2 nd extension in the 2 nd direction,
the 3 rd extension portion is provided at a position in the 2 nd direction that does not overlap the 1 st projection portion and the 2 nd projection portion.
5. The electrostatic chuck according to claim 1, wherein,
the plurality of protruding portions further have a 3 rd protruding portion provided at the 1 st extending portion, protruding toward the 2 nd protruding portion,
the 3 rd projection is disposed adjacent to and opposite to the 2 nd projection.
6. An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
A base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has a 1 st heater element,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided at the plurality of extending portions to protrude in the 2 nd direction,
the plurality of extending parts are provided with a 1 st extending part and a 2 nd extending part,
the plurality of protrusions have: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding part arranged on the 2 nd extending part,
the 1 st projection projects toward the 2 nd projection,
the 2 nd protrusion protrudes toward the 1 st protrusion,
The 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the 1 st zone has: a central region located at the center of the 1 st region when viewed along a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region,
the 1 st opposing region is disposed in the central region.
7. The electrostatic chuck according to claim 6, wherein,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is the circumferential direction.
8. The electrostatic chuck according to claim 6, wherein,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is radial.
9. The electrostatic chuck according to claim 6, wherein,
the plurality of extensions also has a 3 rd extension located between the 1 st extension and the 2 nd extension in the 2 nd direction,
the 3 rd extension portion is provided at a position in the 2 nd direction that does not overlap the 1 st projection portion and the 2 nd projection portion.
10. The electrostatic chuck according to claim 6, wherein,
The plurality of protruding portions further have a 3 rd protruding portion provided at the 1 st extending portion, protruding toward the 2 nd protruding portion,
the 3 rd projection is disposed adjacent to and opposite to the 2 nd projection.
11. An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has a 1 st heater element,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 1 st heater element has a plurality of zones divided in the radial direction,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided at the plurality of extending portions to protrude in the 2 nd direction,
The plurality of extending parts are provided with a 1 st extending part and a 2 nd extending part,
the plurality of protrusions have: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding part arranged on the 2 nd extending part,
the 1 st projection projects toward the 2 nd projection,
the 2 nd protrusion protrudes toward the 1 st protrusion,
the 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the zone 1 contains the outer periphery of the zone 1 heater element,
the 1 st zone has: an inner peripheral portion located radially inward of a radial center line bisecting the 1 st region in a radial direction; and an outer peripheral portion which is located radially outward of the radial center line and includes the outer peripheral edge,
the 1 st opposing region is provided at the inner peripheral portion.
12. The electrostatic chuck according to claim 11, wherein,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is the circumferential direction.
13. The electrostatic chuck according to claim 11, wherein,
the plurality of zones of the 1 st heater element are radially divided,
The 1 st direction is radial.
14. The electrostatic chuck according to claim 11, wherein,
the plurality of extensions also has a 3 rd extension located between the 1 st extension and the 2 nd extension in the 2 nd direction,
the 3 rd extension portion is provided at a position in the 2 nd direction that does not overlap the 1 st projection portion and the 2 nd projection portion.
15. The electrostatic chuck according to claim 11, wherein,
the plurality of protruding portions further have a 3 rd protruding portion provided at the 1 st extending portion, protruding toward the 2 nd protruding portion,
the 3 rd projection is disposed adjacent to and opposite to the 2 nd projection.
16. An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
a base plate having an upper surface on the ceramic dielectric substrate side and a lower surface on the opposite side of the upper surface, for supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has a 1 st heater element,
the 1 st heater element is disposed between the 1 st main face and the upper face,
The 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st heater wire has a 1 st protruding part and a 2 nd protruding part which are bent,
the bending direction of the 1 st protruding part is opposite to the bending direction of the 2 nd protruding part,
the 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the 1 st zone has: a central region located at the center of the 1 st region when viewed along a Z direction perpendicular to the 1 st main surface; and an outer peripheral region located outside the central region,
the 1 st opposing region is disposed in the central region.
17. An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
a base plate having an upper surface on the ceramic dielectric substrate side, a lower surface on the opposite side of the upper surface, and a coolant flow path for flowing a cooling medium, and supporting the ceramic dielectric substrate;
And a heater section for heating the ceramic dielectric substrate, characterized in that,
the heater section has: a 1 st heater element; a bypass layer that is a power supply path to the 1 st heater element; and a 1 st power supply terminal and a 2 nd power supply terminal electrically connected to the bypass layer,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st power supply part is arranged at a position which is not overlapped with the 1 st power supply terminal in the Z direction vertical to the 1 st main surface, and is electrically connected with the 1 st power supply terminal by the bypass layer,
the 2 nd power supply part is arranged at a position which is not overlapped with the 2 nd power supply terminal in the Z direction, is electrically connected with the 2 nd power supply terminal by the bypass layer,
the 1 st heater wire has: a plurality of extension parts extending along the 1 st direction and arranged in the 2 nd direction perpendicular to the 1 st direction; and a plurality of protruding portions provided at the plurality of extending portions to protrude in the 2 nd direction,
The plurality of extending parts are provided with a 1 st extending part and a 2 nd extending part,
the plurality of protrusions have: a 1 st protruding portion provided at the 1 st extending portion; and a 2 nd protruding part arranged on the 2 nd extending part,
the 1 st projection projects toward the 2 nd projection,
the 2 nd protrusion protrudes toward the 1 st protrusion,
the 1 st region has a 1 st opposing region in which the 1 st protruding portion and the 2 nd protruding portion are adjacently and oppositely arranged,
the 1 st opposing region is provided at a position overlapping at least one of the 1 st power supply terminal and the 2 nd power supply terminal in the Z direction.
18. The electrostatic chuck according to claim 17, wherein,
the 1 st zone has: a central region located at the center of the 1 st region when viewed along the Z direction; and an outer peripheral region located outside the central region,
the 1 st opposing region is disposed in the central region.
19. The electrostatic chuck according to claim 17, wherein,
the plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is the circumferential direction.
20. The electrostatic chuck according to claim 17, wherein,
The plurality of zones of the 1 st heater element are radially divided,
the 1 st direction is radial.
21. The electrostatic chuck according to claim 17, wherein,
the plurality of extensions also has a 3 rd extension located between the 1 st extension and the 2 nd extension in the 2 nd direction,
the 3 rd extension portion is provided at a position in the 2 nd direction that does not overlap the 1 st projection portion and the 2 nd projection portion.
22. The electrostatic chuck according to claim 17, wherein,
the plurality of protruding portions further have a 3 rd protruding portion provided at the 1 st extending portion, protruding toward the 2 nd protruding portion,
the 3 rd projection is disposed adjacent to and opposite to the 2 nd projection.
23. An electrostatic chuck is provided with:
a ceramic dielectric substrate having a 1 st main surface on which a processing object is placed and a 2 nd main surface on the opposite side of the 1 st main surface;
a base plate having an upper surface on the ceramic dielectric substrate side, a lower surface on the opposite side of the upper surface, and a coolant flow path for flowing a cooling medium, and supporting the ceramic dielectric substrate;
and a heater section for heating the ceramic dielectric substrate, characterized in that,
The heater section has: a 1 st heater element; a 2 nd heater element; a bypass layer that is a power supply path to the 1 st heater element and the 2 nd heater element; and a 1 st power supply terminal, a 2 nd power supply terminal, a 3 rd power supply terminal, a 4 th power supply terminal, electrically connected to the bypass layer,
the 1 st heater element is disposed between the 1 st main face and the upper face,
the 2 nd heater element is disposed between the 1 st main face and the 1 st heater element or between the 1 st heater element and the upper face,
the 1 st heater element has a plurality of zones,
the plurality of zones of the 1 st heater element have a 1 st zone,
the 1 st zone has: a 1 st heater wire which generates heat by the flow of current; and a 1 st power supply unit and a 2 nd power supply unit for supplying power to the 1 st heater wire,
the 1 st power supply part is arranged at a position which is not overlapped with the 1 st power supply terminal in the Z direction vertical to the 1 st main surface, and is electrically connected with the 1 st power supply terminal by the bypass layer,
the 2 nd power supply part is arranged at a position which is not overlapped with the 2 nd power supply terminal in the Z direction, is electrically connected with the 2 nd power supply terminal by the bypass layer,
The 2 nd heater element has a plurality of zones,
the plurality of zones of the 2 nd heater element have a 2 nd zone,
the zone 2 has: a 2 nd heater wire which generates heat by the flow of current; and a 3 rd power supply unit and a 4 th power supply unit for supplying power to the 2 nd heater wire,
the 3 rd power supply part is arranged at a position which is not overlapped with the 3 rd power supply terminal in the Z direction, is electrically connected with the 3 rd power supply terminal by the bypass layer,
the 4 th power supply part is arranged at a position which is not overlapped with the 4 th power supply terminal in the Z direction, is electrically connected with the 4 th power supply terminal by the bypass layer,
at least one of the 3 rd power supply terminal and the 4 th power supply terminal is provided at a position overlapping with a virtual line segment connecting the center of the 1 st power supply unit and the center of the 2 nd power supply unit in the Z direction.
24. The electrostatic chuck of claim 23, wherein at least one of a center of the 3 rd power supply terminal and a center of the 4 th power supply terminal is disposed at a position overlapping the virtual line segment.
25. The electrostatic chuck of claim 23, wherein the electrostatic chuck comprises,
The zone 1 has; a central region located at the center of the 1 st region when viewed along the Z direction; and an outer peripheral region located outside the central region,
at least any one of the 1 st power supply unit and the 2 nd power supply unit is provided in the central region.
26. The electrostatic chuck of claim 23, wherein the electrostatic chuck comprises,
the zone 1 contains the outer periphery of the zone 1 heater element,
the 1 st zone has: an inner peripheral portion located radially inward of a radial center line bisecting the 1 st region in a radial direction; and an outer peripheral portion which is located radially outward of the radial center line and includes the outer peripheral edge,
at least any one of the 1 st power supply portion and the 2 nd power supply portion is provided in the inner peripheral portion.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-053875 | 2022-03-29 | ||
| JP2022-154888 | 2022-09-28 | ||
| JP2022-154887 | 2022-09-28 | ||
| JP2022154888A JP2023147158A (en) | 2022-03-29 | 2022-09-28 | electrostatic chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116895592A true CN116895592A (en) | 2023-10-17 |
Family
ID=88311226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310302697.7A Pending CN116895592A (en) | 2022-03-29 | 2023-03-27 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116895592A (en) |
-
2023
- 2023-03-27 CN CN202310302697.7A patent/CN116895592A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102153417B1 (en) | Electrostatic chuck | |
| US10879089B2 (en) | Ceramic heater | |
| JP7183526B2 (en) | Electrostatic chuck and semiconductor manufacturing equipment | |
| CN116895592A (en) | Electrostatic chuck | |
| KR20230140358A (en) | Electrostatic chuck | |
| JP2023147158A (en) | electrostatic chuck | |
| TWI813020B (en) | Electrostatic chuck and semiconductor manufacturing equipment | |
| CN116895589A (en) | Electrostatic chuck | |
| TWI813021B (en) | Electrostatic chuck and semiconductor manufacturing equipment | |
| JP7183527B2 (en) | Electrostatic chuck and semiconductor manufacturing equipment | |
| CN114284196A (en) | Electrostatic chuck and semiconductor manufacturing apparatus | |
| US20220102182A1 (en) | Electrostatic chuck and semiconductor manufacturing apparatus | |
| JP7471566B2 (en) | Electrostatic Chuck | |
| US20230317495A1 (en) | Electrostatic chuck | |
| JP2024048766A (en) | Electrostatic Chuck | |
| CN116895591A (en) | Electrostatic chuck | |
| JP2024048721A (en) | Electrostatic Chuck | |
| JP2023147159A (en) | electrostatic chuck | |
| JP2022055291A (en) | Electrostatic chuck and semiconductor manufacturing apparatus | |
| TW202414678A (en) | Electrostatic chuck | |
| CN117790389A (en) | Electrostatic chuck | |
| JP2022055290A (en) | Electrostatic chuck and semiconductor manufacturing apparatus | |
| KR20240044331A (en) | Electrostatic chuck |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |