CN116895557A - Temperature control device for semiconductor manufacturing apparatus and semiconductor manufacturing system - Google Patents
Temperature control device for semiconductor manufacturing apparatus and semiconductor manufacturing system Download PDFInfo
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- CN116895557A CN116895557A CN202310296058.4A CN202310296058A CN116895557A CN 116895557 A CN116895557 A CN 116895557A CN 202310296058 A CN202310296058 A CN 202310296058A CN 116895557 A CN116895557 A CN 116895557A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 135
- 239000004065 semiconductor Substances 0.000 title claims abstract description 135
- 238000010438 heat treatment Methods 0.000 claims abstract description 279
- 239000007788 liquid Substances 0.000 claims abstract description 212
- 238000001816 cooling Methods 0.000 claims abstract description 177
- 239000000110 cooling liquid Substances 0.000 claims abstract description 80
- 239000002826 coolant Substances 0.000 claims abstract description 40
- 230000001105 regulatory effect Effects 0.000 claims description 39
- 239000011259 mixed solution Substances 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 10
- 230000001276 controlling effect Effects 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 6
- 238000013459 approach Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
- F25D17/02—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating liquids, e.g. brine
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/01—Control of temperature without auxiliary power
- G05D23/13—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures
- G05D23/1306—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures for liquids
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/01—Control of temperature without auxiliary power
- G05D23/13—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures
- G05D23/1306—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures for liquids
- G05D23/1313—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures for liquids without temperature sensing element
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Control Of Temperature (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention provides a temperature adjusting device for a semiconductor manufacturing device and a semiconductor manufacturing system, which can reduce the thermal power of a heating part and a cooling part required for setting the semiconductor manufacturing device to a target temperature. The temperature control device is provided with: a heating unit that generates a heating liquid; a cooling unit that generates a cooling liquid; a heating liquid delivery pipe for delivering a heating liquid to the semiconductor manufacturing apparatus; a coolant delivery pipe for delivering a coolant to the semiconductor manufacturing apparatus; a heating-side return pipe for returning the mixed liquid of the heating liquid and the cooling liquid after passing through the semiconductor manufacturing apparatus to the heating section; a cooling-side return pipe for returning the mixed liquid after passing through the semiconductor manufacturing apparatus to the cooling unit; and at least one of a heating side heat exchanger that exchanges heat between the heating liquid and the mixed liquid and a cooling side heat exchanger that exchanges heat between the cooling liquid and the mixed liquid.
Description
Technical Field
The present invention relates to a temperature control device for controlling the temperature of a semiconductor manufacturing apparatus for manufacturing semiconductor devices, such as an etching apparatus and a CVD apparatus. The present invention also relates to a semiconductor manufacturing system including such a temperature control device and a semiconductor manufacturing apparatus.
Background
A semiconductor manufacturing apparatus (e.g., etching apparatus, CVD apparatus) for manufacturing a semiconductor device is configured to perform a manufacturing process while controlling a process temperature. For example, in an etching apparatus, a temperature-adjusted liquid is caused to flow through a flow path formed in a susceptor for supporting a wafer, thereby adjusting the processing temperature of the wafer.
Fig. 8 is a schematic diagram showing an example of a conventional temperature control device for a semiconductor manufacturing apparatus. The temperature control device includes a heating unit 501 for generating a heating liquid and a cooling unit 502 for generating a cooling liquid. The heating liquid and the cooling liquid are mixed to form a mixed liquid, and the mixed liquid is supplied to the susceptor 507 of the semiconductor manufacturing apparatus 505. The wafer W to be processed is supported on the susceptor 507. Heat exchange is performed between the susceptor 507 and the mixed solution, and thereby the semiconductor manufacturing apparatus 505 is maintained at a target temperature.
The temperature of the mixed liquid supplied to the semiconductor manufacturing apparatus 505 is determined by the flow rate of the heating liquid and the flow rate of the cooling liquid (i.e., the mixing ratio of the heating liquid and the cooling liquid). Thus, the flow rate of the heating liquid and the flow rate of the cooling liquid are regulated by the heating side flow regulating valve 511 and the cooling side flow regulating valve 512 to maintain the semiconductor manufacturing apparatus 505 at the target temperature. The mixed liquid after passing through the semiconductor manufacturing apparatus 505 is distributed to the heating section 501 and the cooling section 502. A part of the mixed liquid is reheated by the heating unit 501 to become a heating liquid, and the other part of the mixed liquid is cooled again by the cooling unit 502 to become a cooling liquid.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2021-081144
Patent document 2: japanese patent application laid-open No. 2010-117812
Recently, it has been demanded to change the target temperature of the semiconductor manufacturing apparatus 505 during the processing of the wafer. In particular, an intermediate temperature between the temperature of the heating liquid and the temperature of the cooling liquid is sometimes used for processing the wafer. However, when the mixed liquid having the intermediate temperature is heated and cooled again by the heating portion 501 and the cooling portion 502, the heating portion 501 and the cooling portion 502 require a large thermal power.
Disclosure of Invention
Accordingly, the present invention provides a temperature control device capable of reducing the thermal power of a heating unit and a cooling unit required for setting a semiconductor manufacturing apparatus to a target temperature. The present invention also provides a semiconductor manufacturing system including such a temperature control device and a semiconductor manufacturing apparatus.
In one aspect, there is provided a temperature control device for controlling a temperature of a semiconductor manufacturing apparatus, the temperature control device including: a heating unit that generates a heating liquid; a cooling unit that generates a cooling liquid; a heating liquid transport pipe connected to the heating unit for transporting the heating liquid to the semiconductor manufacturing apparatus; a cooling liquid delivery pipe connected to the cooling unit for delivering the cooling liquid to the semiconductor manufacturing apparatus; a heating side return pipe connected to the heating unit for returning the mixed liquid of the heating liquid and the cooling liquid after passing through the semiconductor manufacturing apparatus to the heating unit; a cooling-side return pipe connected to the cooling unit for returning the mixed liquid after passing through the semiconductor manufacturing apparatus to the cooling unit; and at least one of a heating side heat exchanger that exchanges heat between the heating liquid and the mixed liquid returned to the heating portion and a cooling side heat exchanger that exchanges heat between the cooling liquid and the mixed liquid returned to the cooling portion.
In one aspect, the temperature adjustment device further includes: a heating side flow regulating valve mounted to the heating liquid delivery pipe; and a heating side branch pipe extending from the heating side flow regulating valve to the heating side return pipe.
In one aspect, the temperature adjustment device further includes: a cooling side flow regulating valve mounted to the cooling liquid delivery pipe; and a cooling side branch pipe extending from the cooling side flow rate adjustment valve to the cooling side return pipe.
In one aspect, the temperature control device includes the heating side heat exchanger, the heating side heat exchanger is connected to the heating liquid delivery pipe and the heating side return pipe, and the temperature control device further includes: a heating side bypass pipe connected to the heating liquid delivery pipe, bypassing the heating side heat exchanger; a heating side bypass valve that adjusts a flow rate of the heating liquid to be sent to the heating side bypass pipe and a flow rate of the heating liquid to be sent to the heating side heat exchanger; and a valve control unit that operates the heating-side bypass valve based on a temperature index of the mixed liquid.
In one aspect, the temperature index is a temperature of the mixed solution after passing through the semiconductor manufacturing apparatus.
In one aspect, the temperature index is a target temperature set for the semiconductor manufacturing apparatus.
In one aspect, the valve control unit is configured to instruct the heating-side bypass valve to communicate the heating unit with the heating-side bypass pipe when the temperature index is higher than a heating-side threshold.
In one aspect, the temperature control device includes the cooling side heat exchanger, the cooling side heat exchanger being connected to the coolant delivery pipe and the cooling side return pipe, and further includes: a cooling side bypass pipe connected to the coolant delivery pipe, bypassing the cooling side heat exchanger; a cooling side bypass valve that adjusts a flow rate of the cooling liquid to be sent to the cooling side bypass pipe and a flow rate of the cooling liquid to be sent to the cooling side heat exchanger; and a valve control unit that operates the cooling-side bypass valve based on a temperature index of the mixed liquid.
In one aspect, the temperature index is a temperature of the mixed solution after passing through the semiconductor manufacturing apparatus.
In one aspect, the temperature index is a target temperature set for the semiconductor manufacturing apparatus.
In one aspect, the valve control unit is configured to issue a command to the cooling side bypass valve to communicate the cooling unit with the cooling side bypass pipe when the temperature index is lower than a cooling side threshold value.
In one aspect, the temperature control device includes both the heating side heat exchanger and the cooling side heat exchanger.
In one embodiment, the temperature control device further includes a liquid junction portion connected to the heating liquid delivery pipe and the cooling liquid delivery pipe, and mixes the heating liquid and the cooling liquid to generate the mixed liquid.
In one aspect, the temperature control device further includes a distribution valve for distributing the mixed liquid after passing through the semiconductor manufacturing apparatus to the heating side return pipe and the cooling side return pipe.
In one aspect, there is provided a semiconductor manufacturing system including: a semiconductor manufacturing apparatus for manufacturing a semiconductor device; and the above-mentioned temperature regulating device, it is used for regulating the temperature of the said semiconductor manufacturing installation.
Effects of the invention
The heating side heat exchanger increases the temperature of the mixed liquid returned to the heating unit by using the heating liquid generated by the heating unit. Therefore, the heating-side heat exchanger can reduce the thermodynamic force (i.e., the heating load) required for the heating unit to regenerate the heating liquid in order to heat the mixed liquid to the set temperature. Similarly, the cooling-side heat exchanger reduces the temperature of the mixed liquid returned to the cooling unit by the cooling liquid generated by the cooling unit. Thus, the cooling-side heat exchanger can reduce the thermodynamic force (i.e., the cooling load) required for the cooling unit to regenerate the coolant in order to cool the mixed liquid to the set temperature. As a result, the heating side heat exchanger and the cooling side heat exchanger can improve the temperature adjustment efficiency of the temperature adjustment device.
The heat exchange in the heating side heat exchanger increases the temperature of the mixed liquid, and decreases the temperature of the heating liquid. Therefore, when the target temperature set in the semiconductor manufacturing apparatus approaches the temperature of the heating liquid, the heat exchange in the heating-side heat exchanger may conversely increase the thermal power required for the heating unit. According to the present invention, when the target temperature set in the semiconductor manufacturing apparatus is close to the temperature of the heating liquid, at least a part of the heating liquid bypasses the heating-side heat exchanger. With such an operation, the temperature adjustment efficiency of the temperature adjustment device can be prevented from being lowered.
Similarly, the heat exchange in the cooling side heat exchanger reduces the temperature of the mixed liquid, while the temperature of the cooling liquid increases. Therefore, when the target temperature set in the semiconductor manufacturing apparatus approaches the temperature of the coolant, the heat exchange at the cooling side heat exchanger may conversely increase the thermal power required for the cooling portion. According to the present invention, when the target temperature set in the semiconductor manufacturing apparatus is close to the temperature of the coolant, at least a part of the coolant bypasses the cooling side heat exchanger. With such an operation, the temperature adjustment efficiency of the temperature adjustment device can be prevented from being lowered.
Drawings
Fig. 1 is a schematic diagram showing an embodiment of a semiconductor manufacturing system including a temperature adjusting device and a semiconductor manufacturing device.
Fig. 2 is a diagram showing an example of wafer processing in which the target temperature of the semiconductor manufacturing apparatus is changed stepwise.
Fig. 3 is a graph showing an example of the temperatures of the heating liquid, the cooling liquid, and the mixed liquid circulating between the temperature control apparatus and the semiconductor manufacturing apparatus shown in fig. 1.
Fig. 4 is a graph showing an example of temperatures of a heating liquid, a cooling liquid, and a mixed liquid circulating between a temperature control apparatus without a heat exchanger and a semiconductor manufacturing apparatus.
Fig. 5 is a graph showing a relationship between the temperature [ °c ] of the mixed liquid before flowing into the semiconductor manufacturing apparatus and the thermal power [ kW ] required for the heating section and the cooling section in the example shown in fig. 3.
Fig. 6 is a graph showing a relationship between the temperature [ °c ] of the mixed liquid before flowing into the semiconductor manufacturing apparatus and the thermal power [ kW ] required for the heating section and the cooling section in the example shown in fig. 4.
Fig. 7 is a schematic view showing another embodiment of the temperature adjusting device.
Fig. 8 is a schematic diagram showing an example of a conventional temperature control device for a semiconductor manufacturing apparatus.
Description of the reference numerals
W: the wafer is subjected to a process for producing a wafer,
1: the temperature adjusting device is used for adjusting the temperature of the air,
2: in a semiconductor manufacturing apparatus, a semiconductor wafer is manufactured,
5: a heating part, a heating part and a heating part,
7: a cooling part, a cooling part and a cooling part,
8: a heating liquid conveying pipe is arranged on the heating liquid conveying pipe,
9: a cooling liquid conveying pipe is arranged on the inner side of the cooling liquid conveying pipe,
12: a liquid converging part is arranged at the liquid converging part,
15: the flow-in pipe is connected with the air inlet pipe,
17: a base, a base seat and a base seat,
18: a flow path for the liquid,
20: an outflow pipe, a plurality of air inlets and air outlets,
24: the dispensing valve is configured to dispense fluid,
31: a heating-side return pipe is provided to heat the air,
32: a cooling side return pipe for cooling the air in the air conditioner,
35: a heating side flow regulating valve,
36: the lateral pipe is heated up and the lateral pipe is connected,
40: a valve control portion for controlling the valve,
45: a cooling side flow regulating valve,
46: the lateral pipe is cooled down and the lateral pipe is connected with the cooling pipe,
51: a heat exchanger at the heating side of the heat exchanger,
52: the heat exchanger at the cooling side is used for cooling the heat exchanger,
61: a heating side bypass pipe is arranged at the side of the heating side bypass pipe,
62: a heating side bypass valve is provided to heat the air,
67: a cooling side bypass pipe is provided with a cooling side bypass pipe,
68: a cooling side bypass valve.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Fig. 1 is a schematic diagram showing an embodiment of a semiconductor manufacturing system including a temperature adjustment device 1 and a semiconductor manufacturing device 2. The temperature control device 1 is used for controlling the temperature of a semiconductor manufacturing apparatus 2 (for example, an etching apparatus, a CVD apparatus, a PVD apparatus, or the like). As shown in fig. 1, the semiconductor manufacturing system includes a temperature control device 1 and a semiconductor manufacturing device 2 connected to the temperature control device 1. In the embodiment shown in fig. 1, an etching apparatus that performs plasma etching treatment on the wafer W is used as the semiconductor manufacturing apparatus 2, but the semiconductor manufacturing apparatus 2 is not limited to this embodiment.
The temperature control device 1 includes a heating unit 5 for generating a heating liquid and a cooling unit 7 for generating a cooling liquid. As the heating liquid and the cooling liquid, the same type of liquid such as a fluorine-based inactive liquid is used. The heating unit 5 may use an electric heater or the like. The cooling unit 7 is a vapor compression refrigerator, an absorption refrigerator, or the like. As the vapor compression refrigerator, there are a turbo refrigerator, a screw refrigerator, a rotary refrigerator, a scroll refrigerator, and the like, and these refrigerators can be used. The structures of the heating portion 5 and the cooling portion 7 are not particularly limited as long as the liquid can be heated and cooled.
The temperature control device 1 further includes: a heating liquid delivery pipe 8 for delivering the heating liquid generated by the heating section 5 to the semiconductor manufacturing apparatus 2; and a coolant delivery pipe 9 for delivering the coolant generated by the cooling unit 7 to the semiconductor manufacturing apparatus 2. One end of the heating liquid delivery pipe 8 is connected to the heating unit 5, and one end of the cooling liquid delivery pipe 9 is connected to the cooling unit 7. The other end of the heating liquid transfer pipe 8 and the other end of the cooling liquid transfer pipe 9 are connected to a liquid joining portion 12. The heating liquid generated by the heating portion 5 and the cooling liquid generated by the cooling portion 7 flow through the heating liquid delivery pipe 8 and the cooling liquid delivery pipe 9, respectively, and are mixed at the liquid joining portion 12 to form a mixed liquid.
The liquid junction 12 is connected to a susceptor 17 of the semiconductor manufacturing apparatus 2 via an inflow pipe 15. The base 17 has a flow path 18 inside thereof. One end of the inflow pipe 15 is connected to the liquid merging portion 12, and the other end of the inflow pipe 15 is connected to an inlet of the flow path 18. The wafer W to be processed is supported on the susceptor 17. The mixed liquid of the heating liquid and the cooling liquid is sent to the flow path 18 of the susceptor 17 through the inflow pipe 15.
An outflow pipe 20 is connected to an outlet of the flow path 18 of the base 17. One end of the outflow pipe 20 is connected to the outlet of the base 17, and the other end of the outflow pipe 20 is connected to the distribution valve 24. The temperature control device 1 includes: a heating-side return pipe 31 for returning the mixed liquid after passing through the semiconductor manufacturing apparatus 2 to the heating section 5; and a cooling-side return pipe 32 for returning the mixed liquid after passing through the semiconductor manufacturing apparatus 2 to the cooling unit 7. One end of the heating-side return pipe 31 is connected to the distribution valve 24, and the other end of the heating-side return pipe 31 is connected to the heating unit 5. One end of the cooling-side return pipe 32 is connected to the distribution valve 24, and the other end of the cooling-side return pipe 32 is connected to the cooling unit 7.
The mixed solution having passed through the semiconductor manufacturing apparatus 2 flows through the outflow pipe 20, and is distributed to the heating side return pipe 31 and the cooling side return pipe 32 by the distribution valve 24. That is, a part of the mixed liquid is returned to the heating unit 5 via the heating-side return pipe 31, and the other part of the mixed liquid is returned to the cooling unit 7 via the cooling-side return pipe 32. In this way, the heating liquid and the cooling liquid circulate between the temperature adjustment device 1 and the semiconductor manufacturing device 2.
The heating unit 5 is configured to generate a heating liquid by heating the mixed liquid returned through the heating-side return pipe 31 to a predetermined temperature (for example, 60 ℃) and to convey the heating liquid to the heating liquid conveying pipe 8 at a predetermined constant flow rate. Similarly, the cooling unit 7 is configured to generate a coolant by cooling the mixed liquid returned through the cooling-side return pipe 32 to a predetermined temperature (for example, -40 ℃) and to convey the coolant to the coolant conveying pipe 9 at a predetermined constant flow rate.
The temperature control device 1 further includes a heating-side flow rate control valve 35 that controls the flow rate of the heating liquid supplied to the liquid joining section 12 via the heating liquid supply pipe 8. The heating-side flow regulating valve 35 is attached to the heating-side flow pipe 8. The heating side flow rate adjustment valve 35 is, for example, a three-way valve having a flow rate adjustment function. The heating side flow regulating valve 35 is connected to the heating side return pipe 31 via a heating side branch pipe 36. That is, one end of the heating side branch pipe 36 is connected to the heating side flow regulating valve 35, and the other end of the heating side branch pipe 36 is connected to the heating side return pipe 31. The heating side flow rate adjustment valve 35 is electrically connected to the valve control unit 40, and the operation of the heating side flow rate adjustment valve 35 is controlled by the valve control unit 40.
The temperature control device 1 further includes a cooling side flow rate control valve 45 that controls the flow rate of the cooling liquid supplied to the liquid joining portion 12 via the cooling liquid supply pipe 9. The cooling-side flow regulating valve 45 is attached to the cooling-liquid delivery pipe 9. The cooling side flow rate adjustment valve 45 is, for example, a three-way valve having a flow rate adjustment function. The cooling side flow regulating valve 45 is connected to the cooling side return pipe 32 via a cooling side branch pipe 46. That is, one end of the cooling side branch pipe 46 is connected to the cooling side flow regulating valve 45, and the other end of the cooling side branch pipe 46 is connected to the cooling side return pipe 32. The cooling side flow rate adjustment valve 45 is electrically connected to the valve control unit 40, and the operation of the cooling side flow rate adjustment valve 45 is controlled by the valve control unit 40.
The temperature of the mixed liquid supplied to the semiconductor manufacturing apparatus 2 is determined by the flow rate of the heating liquid and the flow rate of the cooling liquid (i.e., the mixing ratio of the heating liquid and the cooling liquid). Accordingly, the valve control unit 40 determines the flow rate of the heating liquid and the flow rate of the cooling liquid based on the target temperature of the semiconductor manufacturing apparatus 2, and sends command signals indicating the determined flow rates to the heating side flow rate adjustment valve 35 and the cooling side flow rate adjustment valve 45, respectively, to thereby adjust the flow rates of the heating liquid and the cooling liquid by the heating side flow rate adjustment valve 35 and the cooling side flow rate adjustment valve 45. By controlling the flow rate of the heating liquid and the flow rate of the cooling liquid, the semiconductor manufacturing apparatus 2 is maintained at the target temperature. In one embodiment, in the heating unit 5 and the cooling unit 7, when a variable flow pump is used, the heating side flow rate adjustment valve 35 and the cooling side flow rate adjustment valve 45 may not be provided.
The heating liquid having a flow rate corresponding to a difference between the flow rate of the heating liquid supplied from the heating unit 5 to the heating-side flow rate adjustment valve 35 and the flow rate of the heating liquid adjusted by the heating-side flow rate adjustment valve 35 flows from the heating-side flow rate adjustment valve 35 to the heating-side return pipe 31 via the heating-side branch pipe 36, and returns to the heating unit 5 via the heating-side return pipe 31. Similarly, the coolant, which corresponds to the difference between the flow rate of the coolant supplied from the cooling unit 7 to the coolant flow rate adjustment valve 45 and the flow rate of the coolant adjusted by the coolant flow rate adjustment valve 45, flows from the coolant flow rate adjustment valve 45 to the coolant return pipe 32 via the coolant side branch pipe 46, and returns to the cooling unit 7 via the coolant side return pipe 32.
The valve control unit 40 includes a storage device 40a storing a program and an arithmetic device 40b executing an operation in accordance with a command included in the program. The valve control section 40 is composed of at least 1 computer (e.g., microcomputer, programmable logic controller). The storage device 40a includes a main storage device such as a Random Access Memory (RAM) and an auxiliary storage device such as a Hard Disk Drive (HDD) and a Solid State Drive (SSD). Examples of the arithmetic device 40b include a CPU (central processing unit) and a GPU (graphics processing unit). However, the specific configuration of the valve control unit 40 is not limited to these examples.
The heating liquid and the cooling liquid flow into the liquid joining section 12 at the flow rates regulated by the heating side flow rate regulating valve 35 and the cooling side flow rate regulating valve 45, to form a mixed liquid. The mixed solution is supplied to the susceptor 17 of the semiconductor manufacturing apparatus 2. The mixed liquid having passed through the semiconductor manufacturing apparatus 2 is distributed to the heating unit 5 and the cooling unit 7, and is reheated by the heating unit 5 to become a heating liquid, and is cooled by the cooling unit 7 to become a cooling liquid.
The mixed liquid having passed through the semiconductor manufacturing apparatus 2 is distributed by the distribution valve 24 to the heating side return pipe 31 and the cooling side return pipe 32 at the same flow rate as the flow rates of the heating liquid and the cooling liquid flowing into the liquid junction 12. The operation of the distribution valve 24 is controlled by the valve control unit 40. That is, the valve control unit 40 transmits a command signal indicating the same flow rate as the flow rate of the heating liquid and the flow rate of the cooling liquid determined based on the target temperature of the semiconductor manufacturing apparatus 2 to the distribution valve 24, and the distribution valve 24 distributes the mixed liquid to the heating side return pipe 31 and the cooling side return pipe 32 at the flow rate based on the command signal.
The temperature control device 1 includes: a heating-side heat exchanger 51 that exchanges heat between the heating liquid generated by the heating unit 5 and the mixed liquid returned to the heating unit 5; and a cooling-side heat exchanger 52 that exchanges heat between the cooling liquid generated by the cooling unit 7 and the mixed liquid returned to the cooling unit 7. The heating-side heat exchanger 51 is connected to the heating liquid feed pipe 8 and the heating-side return pipe 31, and is disposed between the heating unit 5 and the heating-side flow regulating valve 35. The cooling-side heat exchanger 52 is connected to the cooling liquid delivery pipe 9 and the cooling-side return pipe 32, and is disposed between the cooling unit 7 and the cooling-side flow regulating valve 45.
The heating liquid flowing through the heating liquid delivery pipe 8 exchanges heat with the mixed liquid flowing through the heating side return pipe 31 in the heating side heat exchanger 51, and the mixed liquid returned to the heating portion 5 is heated by the heating liquid. The heating unit 5 generates a heating liquid by heating the mixed liquid to a predetermined temperature (for example, 60 ℃). Since the mixed liquid is heated by the heating liquid in the heating-side heat exchanger 51, the heating unit 5 can generate the heating liquid with less thermal power.
Similarly, the cooling liquid flowing through the cooling liquid supply pipe 9 exchanges heat with the mixed liquid flowing through the cooling-side return pipe 32 in the cooling-side heat exchanger 52, and the mixed liquid returned to the cooling unit 7 is cooled by the cooling liquid. The cooling unit 7 cools the mixed liquid to a predetermined temperature (for example, -40 ℃) to generate a cooling liquid. Since the mixed liquid is already cooled by the cooling liquid in the cooling side heat exchanger 52, the cooling portion 7 can generate the cooling liquid with less thermal power.
The heating side heat exchanger 51 and the cooling side heat exchanger 52 are effective when the target temperature of the semiconductor manufacturing apparatus 2 is in the vicinity of the intermediate temperature between the temperature of the heating liquid and the temperature of the cooling liquid. Recently, as shown in fig. 2, there is a demand for stepwise changing the target temperature of the semiconductor manufacturing apparatus 2 during the processing of the wafer W. In fig. 2, when the wafer W is processed at an intermediate temperature between MIN corresponding to the temperature of the coolant and MAX corresponding to the temperature of the heating liquid, the mixed liquid at the intermediate temperature is returned to the temperature adjusting apparatus 1. The heating-side heat exchanger 51 can reduce the temperature difference between the intermediate-temperature mixed liquid returned to the heating unit 5 and the heating liquid to be generated by the heating unit 5, and the cooling-side heat exchanger 52 can reduce the temperature difference between the intermediate-temperature mixed liquid returned to the cooling unit 7 and the cooling liquid to be generated by the cooling unit 7. As a result, the thermal power required for the heating unit 5 and the cooling unit 7 can be reduced, and the electric power consumption at the heating unit 5 and the cooling unit 7 can be reduced.
Fig. 3 is a graph showing an example of the temperatures of the heating liquid, the cooling liquid, and the mixed liquid circulating between the temperature control apparatus 1 and the semiconductor manufacturing apparatus 2 shown in fig. 1. In fig. 3, the vertical axis represents temperature. In this example, the temperature of the heating liquid generated by the heating unit 5 is 60 ℃, the temperature of the cooling liquid generated by the cooling unit 7 is-40 ℃, the temperature of the mixed liquid of the heating liquid and the cooling liquid supplied to the semiconductor manufacturing apparatus 2 is 10 ℃, and the temperature of the mixed liquid after passing through the semiconductor manufacturing apparatus 2 is 21 ℃. The thermal load in the semiconductor manufacturing apparatus 2 was 6kW.
As shown in fig. 3, a part of the mixed liquid returned from the semiconductor manufacturing apparatus 2 was mixed with the heating liquid at 21 ℃ and the temperature was 41 ℃. The mixture was heated by the heating side heat exchanger 51, and the temperature of the mixture was increased from 41 to 54 ℃. Meanwhile, the mixed solution at 21 ℃ was mixed with the cooling liquid at-0.8 ℃ to become 16 ℃ for the other part of the mixed solution returned from the semiconductor manufacturing apparatus 2. The mixture was cooled by the cooling side heat exchanger 52, and the temperature of the mixture was lowered from 16℃to-23 ℃. As a result, the thermal power (heating load) of the heating portion 5 was 3.2kW, and the thermal power (cooling load) of the cooling portion 7 was 9.2kW.
Fig. 4 is a graph showing an example of the temperatures of the heating liquid, the cooling liquid, and the mixed liquid circulating between the temperature control apparatus 1 without the heat exchanger and the semiconductor manufacturing apparatus 2. In this example, the temperature of the heating liquid generated by the heating unit 5 is 60 ℃, the temperature of the cooling liquid generated by the cooling unit 7 is-40 ℃, the temperature of the mixed liquid of the heating liquid and the cooling liquid supplied to the semiconductor manufacturing apparatus 2 is 10 ℃, and the temperature of the mixed liquid after passing through the semiconductor manufacturing apparatus 2 is 21 ℃. The thermal load in the semiconductor manufacturing apparatus 2 was 6kW.
As shown in fig. 4, a part of the mixed liquid returned from the semiconductor manufacturing apparatus 2 was mixed with the heating liquid at 21 ℃ and flowed into the heating section 5 at a temperature of 40.5 ℃. The difference between the set temperature of the heating liquid to be generated by the heating unit 5 at 60 ℃ and the temperature of the mixed liquid at 40.5 ℃ is larger than the temperature difference in the example of fig. 3. Thus, the thermal power (heating load) of the heating portion 5 is 10.6kW. The mixed solution at 21℃was mixed with the cooling liquid at-40℃in the other part of the mixed solution returned from the semiconductor manufacturing apparatus 2, and the mixed solution was flowed into the cooling section 7 at-9.5 ℃. The difference between the set temperature of the cooling liquid to be generated by the cooling unit 7 and the temperature of the mixed liquid of-40 ℃ and-9.5 ℃ is larger than the temperature difference in the example of fig. 3. Thus, the thermodynamic power (cooling load) of the cooling portion 7 is 16.6kW.
As can be seen from a comparison between fig. 3 and fig. 4: the heating side heat exchanger 51 and the cooling side heat exchanger 52 reduce the thermal power in the heating portion 5 and the cooling portion 7. As a result, the temperature adjustment efficiency of the temperature adjustment device 1 can be improved.
Fig. 5 is a graph showing the relationship between the temperature [ °c ] of the mixed liquid before flowing into the semiconductor manufacturing apparatus 2 and the thermal power [ kW ] required for the heating unit 5 and the cooling unit 7 in the example shown in fig. 3, and fig. 6 is a graph showing the relationship between the temperature [ °c ] of the mixed liquid before flowing into the semiconductor manufacturing apparatus 2 and the thermal power [ kW ] required for the heating unit 5 and the cooling unit 7 in the example shown in fig. 4.
In the graph shown in fig. 5, when the temperature of the mixed solution before flowing into the semiconductor manufacturing apparatus 2 is 10 ℃, the thermal power (heating load) of the heating portion 5 is 3.2kW, and the thermal power (cooling load) of the cooling portion 7 is 9.2kW. In the graph shown in fig. 6, when the temperature of the mixed solution before flowing into the semiconductor manufacturing apparatus 2 is 10 ℃, the thermal power (heating load) of the heating portion 5 is 10.6kW, and the thermal power (cooling load) of the cooling portion 7 is 16.6kW. As is clear from this comparison, the heating-side heat exchanger 51 and the cooling-side heat exchanger 52 can significantly reduce the thermal power in the heating portion 5 and the cooling portion 7, particularly in the intermediate region between the temperature of the heating liquid and the temperature of the cooling liquid.
As shown in fig. 5, when the temperature of the mixed liquid supplied to the semiconductor manufacturing apparatus 2 is close to the temperature of the heating liquid (60 ℃) (that is, when the target temperature of the semiconductor manufacturing apparatus 2 is close to the temperature of the heating liquid), the temperature of the mixed liquid returned from the semiconductor manufacturing apparatus 2 to the heating portion 5 is high, and therefore, the thermal power of the heating portion 5 is low (that is, the heating efficiency of the heating portion 5 is high). Therefore, the heating-side heat exchanger 51 may not be provided when the target temperature of the semiconductor manufacturing apparatus 2 is fixed and the temperature of the heating liquid is close. Similarly, when the temperature of the mixed liquid supplied to the semiconductor manufacturing apparatus 2 approaches the temperature of the cooling liquid (-40 ℃), that is, when the target temperature of the semiconductor manufacturing apparatus 2 approaches the temperature of the cooling liquid, the temperature of the mixed liquid returned from the semiconductor manufacturing apparatus 2 to the cooling unit 7 is low, and therefore, the thermal power of the cooling unit 7 is low (that is, the cooling efficiency of the cooling unit 7 is high). Therefore, when the target temperature of the semiconductor manufacturing apparatus 2 is fixed and the temperature of the coolant is close to the target temperature, the cooling side heat exchanger 52 may not be provided.
Fig. 7 is a schematic diagram showing another embodiment of the temperature control device 1. The configuration and operation of the present embodiment, which are not specifically described, are the same as those of the embodiment described with reference to fig. 1 to 6, and thus, the repetitive description thereof is omitted.
The temperature control device 1 according to the embodiment shown in fig. 7 further includes: a heating side bypass pipe 61 bypassing the heating side heat exchanger 51; and a heating side bypass valve 62 that adjusts the flow rate of the heating liquid supplied to the heating side bypass pipe 61 and the flow rate of the heating liquid supplied to the heating side heat exchanger 51. The heating-side bypass pipe 61 is connected to the heating liquid supply pipe 8. More specifically, one end of the heating-side bypass pipe 61 is connected to the heating liquid delivery pipe 8 at a position between the heating portion 5 and the heating-side heat exchanger 51, and the other end of the heating-side bypass pipe 61 is connected to the heating liquid delivery pipe 8 at a position between the heating-side heat exchanger 51 and the heating-side flow regulating valve 35.
The heating-side bypass valve 62 is disposed between the heating unit 5 and the heating-side heat exchanger 51, and is connected to both the heating-side bypass pipe 61 and the heating liquid delivery pipe 8. Specific examples of the heating-side bypass valve 62 include a three-way valve and a combination of a plurality of valves. The heating-side bypass valve 62 may be configured to selectively feed the heating liquid generated by the heating unit 5 to either one of the heating-side bypass pipe 61 and the heating-side heat exchanger 51, or may be configured to distribute the heating liquid generated by the heating unit 5 to the heating-side bypass pipe 61 and the heating-side heat exchanger 51 at a certain flow rate ratio.
The heating-side bypass valve 62 is electrically connected to the valve control unit 40, and the operation of the heating-side bypass valve 62 is controlled by the valve control unit 40. More specifically, the valve control unit 40 is configured to operate the heating-side bypass valve 62 based on the temperature index of the mixed liquid. The temperature index may be a target temperature set in the semiconductor manufacturing apparatus 2, or may be a measured value of the temperature of the mixed solution after passing through the semiconductor manufacturing apparatus 2. A temperature measuring device (e.g., a temperature sensor) for obtaining a measured value of the temperature of the mixture is attached to the outflow pipe 20 or the heating-side return pipe 31.
When the temperature index is smaller than the heating side threshold value, the valve control unit 40 operates the heating side bypass valve 62 to block communication between the heating unit 5 and the heating side bypass pipe 61. Thus, the heating liquid flows in the heating side heat exchanger 51, but does not flow in the heating side bypass pipe 61. When the temperature index is higher than the heating side threshold, the valve control unit 40 issues a command to the heating side bypass valve 62 to communicate the heating unit 5 with the heating side bypass pipe 61. Thereby, the heating liquid generated by the heating unit 5 flows through the heating side bypass pipe 61. At this time, the flow rate of the heating liquid flowing into the heating side heat exchanger 51 is reduced or set to 0.
The heat exchange in the heating side heat exchanger 51 increases the temperature of the mixed liquid, while the temperature of the heating liquid is decreased. Therefore, when the target temperature set in the semiconductor manufacturing apparatus 2 approaches the temperature of the heating liquid, the heat exchange in the heating-side heat exchanger 51 may conversely increase the thermal power required for the heating unit 5. According to the present embodiment, when the target temperature set in the semiconductor manufacturing apparatus 2 approaches the temperature of the heating liquid, at least a part of the heating liquid bypasses the heating-side heat exchanger 51. With such an operation, the temperature adjustment efficiency of the temperature adjustment device 1 can be prevented from being lowered.
The temperature control device 1 according to the embodiment shown in fig. 7 further includes: a cooling side bypass pipe 67 that bypasses the cooling side heat exchanger 52; and a cooling-side bypass valve 68 that adjusts the flow rate of the coolant that is sent to the cooling-side bypass pipe 67 and the flow rate of the coolant that is sent to the cooling-side heat exchanger 52. The cooling side bypass pipe 67 is connected to the coolant delivery pipe 9. More specifically, one end of the cooling-side bypass pipe 67 is connected to the coolant delivery pipe 9 at a position between the cooling portion 7 and the cooling-side heat exchanger 52, and the other end of the cooling-side bypass pipe 67 is connected to the coolant delivery pipe 9 at a position between the cooling-side heat exchanger 52 and the cooling-side flow regulating valve 45.
The cooling-side bypass valve 68 is disposed between the cooling unit 7 and the cooling-side heat exchanger 52, and is connected to both the cooling-side bypass pipe 67 and the coolant delivery pipe 9. Specific examples of the cooling side bypass valve 68 include a three-way valve and a combination of a plurality of valves. The cooling-side bypass valve 68 may be configured to selectively feed the coolant generated by the cooling unit 7 to either one of the cooling-side bypass pipe 67 and the cooling-side heat exchanger 52, or may be configured to distribute the coolant generated by the cooling unit 7 to the cooling-side bypass pipe 67 and the cooling-side heat exchanger 52 at a certain flow rate ratio.
The cooling side bypass valve 68 is electrically connected to the valve control unit 40, and the operation of the cooling side bypass valve 68 is controlled by the valve control unit 40. More specifically, the valve control unit 40 is configured to operate the cooling-side bypass valve 68 based on the temperature index of the mixture. The temperature index may be a target temperature set in the semiconductor manufacturing apparatus 2, or may be a measured value of the temperature of the mixed solution after passing through the semiconductor manufacturing apparatus 2. A temperature measuring device (e.g., a temperature sensor) for obtaining a measured value of the temperature of the mixture is attached to the outflow pipe 20 or the cooling-side return pipe 32.
When the temperature index is greater than the cooling side threshold value, the valve control unit 40 operates the cooling side bypass valve 68 to block communication between the cooling unit 7 and the cooling side bypass pipe 67. Thus, the coolant flows in the cooling side heat exchanger 52, but does not flow in the cooling side bypass pipe 67. When the temperature index is lower than the cooling side threshold value, the valve control unit 40 instructs the cooling side bypass valve 68 to communicate the cooling unit 7 with the cooling side bypass pipe 67. Thereby, the coolant generated by the cooling unit 7 flows through the cooling-side bypass pipe 67. At this time, the flow rate of the coolant flowing to the cooling side heat exchanger 52 decreases or becomes 0.
The heat exchange at the cooling side heat exchanger 52 reduces the temperature of the mixed liquid, while the temperature of the cooling liquid increases. Therefore, when the target temperature set in the semiconductor manufacturing apparatus 2 approaches the temperature of the coolant, the heat exchange at the cooling side heat exchanger 52 may conversely increase the thermal power required for the cooling unit 7. According to the present embodiment, when the target temperature set in the semiconductor manufacturing apparatus 2 approaches the temperature of the coolant, at least a part of the coolant bypasses the cooling side heat exchanger 52. With such an operation, the temperature adjustment efficiency of the temperature adjustment device 1 can be prevented from being lowered.
In the present embodiment, when the target temperature of the semiconductor manufacturing apparatus 2 is fixed and the temperature of the heating liquid is close to the target temperature, the heating-side heat exchanger 51, the heating-side bypass pipe 61, and the heating-side bypass valve 62 may not be provided. When the target temperature of the semiconductor manufacturing apparatus 2 is fixed and the temperature of the coolant is close, the cooling side heat exchanger 52, the cooling side bypass pipe 67, and the cooling side bypass valve 68 may not be provided.
The above-described embodiments are described with the object that a person having ordinary skill in the art to which the present invention pertains can practice the present invention. As long as those skilled in the art can certainly accomplish various modifications of the above-described embodiments, the technical idea of the present invention can be applied to other embodiments. Therefore, the present invention is not limited to the embodiments described above, and is to be interpreted within the broadest scope based on the technical ideas defined in the claims.
Claims (17)
1. A temperature control device for controlling the temperature of a semiconductor manufacturing apparatus, comprising:
a heating unit that generates a heating liquid;
a cooling unit that generates a cooling liquid;
a heating liquid transport pipe connected to the heating unit for transporting the heating liquid to the semiconductor manufacturing apparatus;
a cooling liquid delivery pipe connected to the cooling unit for delivering the cooling liquid to the semiconductor manufacturing apparatus;
a heating side return pipe connected to the heating unit for returning the mixed liquid of the heating liquid and the cooling liquid after passing through the semiconductor manufacturing apparatus to the heating unit;
a cooling-side return pipe connected to the cooling unit for returning the mixed liquid after passing through the semiconductor manufacturing apparatus to the cooling unit; and
at least one of a heating side heat exchanger that exchanges heat between the heating liquid and the mixed liquid returned to the heating portion and a cooling side heat exchanger that exchanges heat between the cooling liquid and the mixed liquid returned to the cooling portion.
2. A temperature regulating device according to claim 1, wherein,
the device further comprises:
a heating side flow regulating valve mounted to the heating liquid delivery pipe; and
a heating side branch pipe extending from the heating side flow regulating valve to the heating side return pipe.
3. A temperature regulating device according to claim 1, wherein,
the device further comprises:
a cooling side flow regulating valve mounted to the cooling liquid delivery pipe; and
a cooling side branch pipe extending from the cooling side flow rate adjustment valve to the cooling side return pipe.
4. A temperature regulating device according to claim 1 or 2, wherein,
the temperature adjusting device is provided with the heating side heat exchanger,
the heating side heat exchanger is connected with the heating liquid conveying pipe and the heating side return pipe,
the temperature adjustment device further comprises: a heating side bypass pipe connected to the heating liquid delivery pipe, bypassing the heating side heat exchanger; a heating side bypass valve that adjusts a flow rate of the heating liquid to be sent to the heating side bypass pipe and a flow rate of the heating liquid to be sent to the heating side heat exchanger; and a valve control unit that operates the heating-side bypass valve based on a temperature index of the mixed liquid.
5. A temperature regulating apparatus according to claim 4, wherein,
the temperature index is a temperature of the mixed solution after passing through the semiconductor manufacturing apparatus.
6. A temperature regulating apparatus according to claim 4, wherein,
the temperature index is a target temperature set for the semiconductor manufacturing apparatus.
7. A temperature regulating apparatus according to claim 4, wherein,
the valve control unit is configured to instruct the heating-side bypass valve to communicate the heating unit with the heating-side bypass pipe when the temperature index is higher than a heating-side threshold.
8. A temperature regulating device according to claim 1 or 3, wherein,
the temperature adjusting device is provided with the cooling side heat exchanger,
the cooling side heat exchanger is connected with the cooling liquid conveying pipe and the cooling side return pipe,
the temperature adjustment device further comprises: a cooling side bypass pipe connected to the coolant delivery pipe, bypassing the cooling side heat exchanger; a cooling side bypass valve that adjusts a flow rate of the cooling liquid to be sent to the cooling side bypass pipe and a flow rate of the cooling liquid to be sent to the cooling side heat exchanger; and a valve control unit that operates the cooling-side bypass valve based on a temperature index of the mixed liquid.
9. A temperature regulating device according to claim 8, wherein,
the temperature index is a temperature of the mixed solution after passing through the semiconductor manufacturing apparatus.
10. A temperature regulating device according to claim 8, wherein,
the temperature index is a target temperature set for the semiconductor manufacturing apparatus.
11. A temperature regulating device according to claim 8, wherein,
the valve control unit is configured to instruct the cooling-side bypass valve to communicate the cooling unit with the cooling-side bypass pipe when the temperature index is lower than a cooling-side threshold value.
12. A temperature regulating device according to claim 1, wherein,
the temperature control device is provided with both the heating side heat exchanger and the cooling side heat exchanger.
13. A temperature regulating device according to claim 1, wherein,
and a liquid joining portion connected to the heating liquid conveying pipe and the cooling liquid conveying pipe, and configured to mix the heating liquid and the cooling liquid to generate the mixed liquid.
14. A temperature regulating device according to claim 1, wherein,
the semiconductor manufacturing apparatus further includes a distribution valve for distributing the mixed liquid having passed through the semiconductor manufacturing apparatus to the heating side return pipe and the cooling side return pipe.
15. A semiconductor manufacturing system is characterized by comprising:
a semiconductor manufacturing apparatus for manufacturing a semiconductor device; and
the temperature adjustment device according to any one of claims 1, 2, 3, 12, 13, 14 for adjusting a temperature of the semiconductor manufacturing device.
16. A semiconductor manufacturing system is characterized by comprising:
a semiconductor manufacturing apparatus for manufacturing a semiconductor device; and
the temperature adjustment device according to claim 4, which is used for adjusting a temperature of the semiconductor manufacturing device.
17. A semiconductor manufacturing system is characterized by comprising:
a semiconductor manufacturing apparatus for manufacturing a semiconductor device; and
the temperature adjustment device according to claim 8, which is used for adjusting a temperature of the semiconductor manufacturing device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-058188 | 2022-03-31 | ||
| JP2022058188A JP2023149554A (en) | 2022-03-31 | 2022-03-31 | Temperature adjusting device for semiconductor manufacturing device and semiconductor manufacturing system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116895557A true CN116895557A (en) | 2023-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310296058.4A Pending CN116895557A (en) | 2022-03-31 | 2023-03-24 | Temperature control device for semiconductor manufacturing apparatus and semiconductor manufacturing system |
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| Country | Link |
|---|---|
| US (1) | US20230317482A1 (en) |
| JP (1) | JP2023149554A (en) |
| KR (1) | KR20230141544A (en) |
| CN (1) | CN116895557A (en) |
| TW (1) | TW202341322A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5172615B2 (en) | 2008-11-12 | 2013-03-27 | Ｃｋｄ株式会社 | Temperature control device |
| JP7339135B2 (en) | 2019-11-20 | 2023-09-05 | Ckd株式会社 | temperature control system |
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2022
- 2022-03-31 JP JP2022058188A patent/JP2023149554A/en active Pending
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2023
- 2023-03-24 CN CN202310296058.4A patent/CN116895557A/en active Pending
- 2023-03-24 US US18/189,639 patent/US20230317482A1/en active Pending
- 2023-03-27 KR KR1020230039647A patent/KR20230141544A/en unknown
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| TW202341322A (en) | 2023-10-16 |
| JP2023149554A (en) | 2023-10-13 |
| US20230317482A1 (en) | 2023-10-05 |
| KR20230141544A (en) | 2023-10-10 |
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