CN116887616A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
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- CN116887616A CN116887616A CN202310851010.5A CN202310851010A CN116887616A CN 116887616 A CN116887616 A CN 116887616A CN 202310851010 A CN202310851010 A CN 202310851010A CN 116887616 A CN116887616 A CN 116887616A
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- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000005530 etching Methods 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000000151 deposition Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims description 48
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000000059 patterning Methods 0.000 claims description 19
- 229910001111 Fine metal Inorganic materials 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 9
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000003086 colorant Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 15
- 239000000243 solution Substances 0.000 description 7
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application discloses a display panel and a preparation method thereof, and belongs to the technical field of display. The preparation method of the display panel comprises the following steps: providing an array substrate, and etching a first organic light-emitting layer and a first cathode layer which are sequentially deposited on the array substrate to obtain a patterned first organic light-emitting layer and a patterned first cathode which are stacked together; and sequentially depositing a second organic light-emitting layer and a second cathode layer, protecting the patterned first organic light-emitting layer by the patterned first cathode in the etching process to obtain a patterned second organic light-emitting layer and a patterned second cathode, further obtaining a patterned third organic light-emitting layer and a patterned third cathode by the same method, and depositing an auxiliary electrode to connect the patterned first cathode, the patterned second cathode and the patterned third cathode to obtain the display panel. The application solves the technical problem of higher preparation cost of the conventional display panel.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
In recent years, organic light emitting diode (Organic Light Emitting Diode, OLED) display panels have been widely used in the display field because of their advantages of self-luminescence, wide viewing angle, fast response, low power consumption, flexible display, and the like. The conventional display panel is mostly prepared by adopting an evaporation process, namely, an organic material is evaporated into each pixel unit of a pixel area of an OLED back plate by using a Fine Metal Mask (FMM), so that a required organic luminescent material layer is formed on the OLED back plate; the FMM is costly, which results in a high production cost of the display panel.
The foregoing is provided merely for the purpose of facilitating understanding of the technical solutions of the present application and is not intended to represent an admission that the foregoing is prior art.
Disclosure of Invention
The application mainly aims to provide a display panel and a preparation method thereof, and aims to solve the technical problem of higher production cost of a conventional display panel.
In order to achieve the above object, the present application provides a method for manufacturing a display panel, the method comprising the steps of:
providing an array substrate, and forming a pixel definition layer and a pixel anode layer on the array substrate; the pixel definition layer is provided with a plurality of pixel openings, the anodes of the pixel anode layers are exposed out of the pixel openings, and the pixel openings comprise a first opening, a second opening and a third opening;
sequentially depositing a first organic light-emitting layer and a first cathode layer on the array substrate, forming a first photoresist layer on the first cathode layer, and patterning the first photoresist layer to obtain a first mask pattern above the first opening;
etching the first organic light-emitting layer and the first cathode layer by taking the first mask pattern as an etching-resistant layer to obtain a patterned first organic light-emitting layer and a patterned first cathode which are stacked together;
removing the first mask pattern, sequentially depositing a second organic light-emitting layer and a second cathode layer on the array substrate, forming a second photoresist layer on the second cathode layer, and patterning the second photoresist layer to obtain a second mask pattern above the second opening;
etching the second organic light-emitting layer and the second cathode layer by taking the second mask pattern as an etching-resistant layer to obtain a patterned second organic light-emitting layer and a patterned second cathode which are stacked together;
removing the second mask pattern, sequentially depositing a third organic light-emitting layer and a third cathode layer on the array substrate, forming a third photoresist layer on the third cathode layer, and patterning the third photoresist layer to obtain a third mask pattern above the third opening;
etching the third organic light-emitting layer and the third cathode layer by taking the third mask pattern as an etching-resistant layer to obtain a patterned third organic light-emitting layer and a patterned third cathode which are stacked together;
and removing the third mask pattern, and depositing an auxiliary electrode on the array substrate to connect the patterned first cathode, the patterned second cathode and the patterned third cathode, so as to obtain the display panel.
Optionally, the thickness of the first cathode layer is 150-300nm, the thickness of the second cathode layer is 100-250nm, and the thickness of the third cathode layer is 50-200nm.
Optionally, the step of depositing an auxiliary electrode on the array substrate includes:
and setting a fine metal mask on the array substrate so that the auxiliary electrode is deposited in a non-opening area on the array substrate, wherein the non-opening area is an area of the array substrate except for the first opening, the second opening and the third opening.
Optionally, the step of depositing an auxiliary electrode on the array substrate further includes:
and depositing the auxiliary electrode on the whole layer of the array substrate.
Optionally, the auxiliary electrode includes: one or more of silver, aluminum, magnesium aluminum alloy, indium tin oxide and indium zinc oxide, and the thickness is 200-400nm.
Optionally, the first, second and third cathode layers comprise: one or more of silver, aluminum, magnesium aluminum alloy, indium tin oxide, and indium zinc oxide.
Optionally, the deposition process of the first organic light emitting layer, the second organic light emitting layer and the third organic light emitting layer is an evaporation process.
Optionally, the deposition process of the first cathode, the second cathode and the third cathode is an evaporation process or a magnetron sputtering process.
The application also provides a display panel which is manufactured by the display panel manufacturing method.
The application discloses a display panel and a preparation method thereof, wherein an array substrate is provided, and a pixel definition layer and a pixel anode layer are formed on the array substrate; the pixel definition layer is provided with a plurality of pixel openings, the anodes of the pixel anode layers are exposed out of the pixel openings, and the pixel openings comprise a first opening, a second opening and a third opening; sequentially depositing a first organic light-emitting layer and a first cathode layer on the array substrate, forming a first photoresist layer on the first cathode layer, and patterning the first photoresist layer to obtain a first mask pattern above the first opening; etching the first organic light-emitting layer and the first cathode layer by taking the first mask pattern as an etching-resistant layer to obtain a patterned first organic light-emitting layer and a patterned first cathode which are stacked together; the etching process is used for replacing a fine metal mask plate required to be used in the conventional display panel preparation process, so that the preparation cost of the display panel is greatly reduced; removing the first mask pattern, sequentially depositing a second organic light-emitting layer and a second cathode layer on the array substrate, forming a second photoresist layer on the second cathode layer, and patterning the second photoresist layer to obtain a second mask pattern above the second opening; etching the second organic light-emitting layer and the second cathode layer by taking the second mask pattern as an etching-resistant layer to obtain a patterned second organic light-emitting layer and a patterned second cathode which are stacked together; because the patterned first cathode is deposited on the patterned first organic light-emitting layer, the patterned first organic light-emitting layer can be well protected from being damaged in the process of etching the second organic light-emitting layer and the second cathode layer, so that the quality of the prepared display panel is ensured; removing the second mask pattern, sequentially depositing a third organic light-emitting layer and a third cathode layer on the array substrate, forming a third photoresist layer on the third cathode layer, and patterning the third photoresist layer to obtain a third mask pattern above the third opening; and then the third mask pattern is used as an etching resistant layer, and the third organic light-emitting layer and the third cathode layer are etched to obtain a patterned third organic light-emitting layer and a patterned third cathode which are stacked together; because the patterned first cathode is deposited on the patterned first organic light-emitting layer and the patterned second cathode is deposited on the patterned second organic light-emitting layer, the patterned first organic light-emitting layer and the patterned second organic light-emitting layer can be well protected from being damaged in the process of etching the third organic light-emitting layer and the third cathode layer, so that the quality of the prepared display panel is ensured; and then removing the third mask pattern, and depositing an auxiliary electrode on the array substrate to connect the patterned first cathode, the patterned second cathode and the patterned third cathode, thereby manufacturing the display panel. The conventional fine metal mask is replaced by the etching process to prepare the display panel, so that the preparation process cost of the display panel is greatly reduced, and in the etching process, the cathode deposited on the organic light-emitting layer provides protection for the organic light-emitting layer, so that the condition that the patterned organic light-emitting layer on the array substrate is damaged in the patterning process of the next organic light-emitting layer is avoided, and the production quality and reliability of the prepared display panel are improved.
Drawings
FIG. 1 is a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the application;
FIG. 2 is a schematic diagram of an array substrate according to an embodiment of the present application;
FIG. 3 is a schematic diagram of an intermediate device obtained in step S20 in FIG. 1;
FIG. 4 is a schematic structural diagram of another intermediate device obtained in step S20 in FIG. 1;
FIG. 5 is a schematic diagram of an intermediate device obtained in step S30 in FIG. 1;
FIG. 6 is a schematic structural diagram of an intermediate device obtained in step S40 in FIG. 1;
FIG. 7 is a schematic structural diagram of another intermediate device obtained in step S40 in FIG. 1;
FIG. 8 is a schematic structural diagram of another intermediate device obtained in step S40 in FIG. 1;
FIG. 9 is a schematic diagram of an intermediate device obtained in step S50 in FIG. 1;
FIG. 10 is a schematic diagram of an intermediate device obtained in step S60 in FIG. 1;
FIG. 11 is a schematic structural diagram of another intermediate device obtained in step S60 in FIG. 1;
FIG. 12 is a schematic structural diagram of still another intermediate device obtained in step S60 in FIG. 1;
FIG. 13 is a schematic structural diagram of an intermediate device obtained in step S70 in FIG. 1;
FIG. 14 is a schematic diagram of an intermediate device obtained in step S80 in FIG. 1;
FIG. 15 is a schematic diagram of a display panel according to an embodiment of the application;
fig. 16 is another schematic structural diagram of a display panel according to an embodiment of the application.
Reference numerals illustrate:
the achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
In addition, the meaning of "and/or" as it appears throughout includes three parallel schemes, for example "A and/or B", including the A scheme, or the B scheme, or the scheme where A and B are satisfied simultaneously. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be regarded as not exist and not within the protection scope of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
An embodiment of the present application provides a method for manufacturing a display panel, referring to fig. 1, the method includes the following steps:
step S10, providing an array substrate 100, and forming a pixel defining layer 110 and a pixel anode layer 120 on the array substrate 100; wherein the pixel defining layer 110 has a plurality of pixel openings 130, the anode of the pixel anode layer 120 exposes the pixel openings 130, and the plurality of pixel openings 130 include a first opening 131, a second opening 132, and a third opening 133;
referring to fig. 2, an array substrate 100 is provided, and a pixel defining layer 110 and a pixel anode layer 120 are formed on the array substrate 100, wherein the pixel defining layer 110 may be a patterned pixel defining layer 110, that is, the pixel defining layer 110 has a plurality of pixel openings 130, so that the anode of the pixel anode layer 120 is exposed in each of the pixel openings 130; the plurality of pixel openings 130 include a first opening 131, a second opening 132, and a third opening 133.
In one possible embodiment, the array substrate 100 includes one or more of a low temperature polysilicon substrate, a low temperature polycrystalline oxide substrate, and a metal oxide substrate.
The array substrate 100 is illustratively a thin film transistor backplane (Thin Film Transistor, TFT).
In another possible embodiment, the pixel anode layer 120 includes: one or more of silver, aluminum, silver oxide, aluminum oxide, indium tin oxide and indium zinc oxide, and the thickness is 50-200nm.
Illustratively, the pixel anode layer 120 is a laminated structure, and may be two, three or more layers; the topmost and bottommost layers of the pixel anode layer 120 are metal oxides and the middle layer is a single metal.
Illustratively, the pixel anode layer 120 is electrically connected with the array substrate 100.
Step S20, sequentially depositing a first organic light emitting layer 210 and a first cathode layer 220 on the array substrate 100, forming a first photoresist layer on the first cathode layer 220, and patterning the first photoresist layer to obtain a first mask pattern 230 above the first opening 131;
depositing a first organic light emitting layer 210 on the array substrate 100, depositing a first cathode layer 220 on the first organic light emitting layer 210 (refer to fig. 3), coating a photoresist on the first cathode layer 220 to form a first photoresist layer, and patterning the first photoresist layer to obtain a first mask pattern 230 (refer to fig. 4) over the first opening 131; the organic light-emitting layer and the cathode are patterned by etching, so that a fine metal mask is not required, and the process cost for preparing the display panel is reduced.
The first organic light emitting layer 210 has a thickness of 100-300nm, for example.
The first organic light emitting layer 210 is illustratively any one of a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer.
Illustratively, the first, second and third organic light emitting layers 210, 310 and 410 of the present application may include: one or more of a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer.
In one possible embodiment, the first cathode layer 220 includes: one or more of silver, aluminum, magnesium aluminum alloy, indium tin oxide, and indium zinc oxide; the thickness of the first cathode layer 220 is 150-300nm.
In another possible embodiment, the deposition process of the first organic light emitting layer 210 is an evaporation process, and the deposition process of the first cathode layer 220 is an evaporation process or a magnetron sputtering process.
Illustratively, the first photoresist layer is a positive photoresist; such as diazonaphthoquinone phenolic resin photoresists.
Step S30, etching the first organic light emitting layer 210 and the first cathode layer 220 with the first mask pattern 230 as an etching-resistant layer, so as to obtain a patterned first organic light emitting layer 211 and a patterned first cathode 221 that are stacked together;
the first organic light emitting layer 210 and the first cathode layer 220 are etched with the first mask pattern 230 as an etching-resistant layer to pattern the first organic light emitting layer 210 and the first cathode layer 220, so as to obtain a patterned first organic light emitting layer 211 and a patterned first cathode 221 (refer to fig. 5) stacked together.
Exemplary, the portions of the first organic light emitting layer 210 and the first cathode layer 220 outside the first mask pattern 230 are plasma-treated with a gas to pattern the first organic light emitting layer 210 and the first cathode layer 220, wherein the gas contains O 2 、N 2 O、CF 4 At least one gas selected from Ar.
Step S40, removing the first mask pattern 230, sequentially depositing a second organic light emitting layer 310 and a second cathode layer 320 on the array substrate 100, forming a second photoresist layer on the second cathode layer 320, and patterning the second photoresist layer to obtain a second mask pattern 330 above the second opening 132;
removing the first mask pattern 230 (refer to fig. 6), further continuing to deposit a second organic light emitting layer 310 on the array substrate 100, and depositing a second cathode layer 320 on the second organic light emitting layer 310 (refer to fig. 7); further coating photoresist on the second cathode layer 320 to form a second photoresist layer; and patterning the second photoresist layer to obtain a second mask pattern 330 (refer to fig. 8) over the second opening 132.
In one possible embodiment, the thickness of the second organic light emitting layer 310 is 100-300nm; the second organic light emitting layer 310 is any one of a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer, and is different in color from the first organic light emitting layer 210.
In another possible embodiment, the second cathode layer 320 includes: one or more of silver, aluminum, magnesium aluminum alloy, indium tin oxide and indium zinc oxide, and the thickness is 100-250nm.
In yet another possible embodiment, the deposition process of the second organic light emitting layer 310 is an evaporation process, and the deposition process of the second cathode layer 320 is an evaporation process or a magnetron sputtering process.
Illustratively, the second photoresist layer is a positive photoresist; such as diazonaphthoquinone phenolic resin photoresists.
Step S50, etching the second organic light emitting layer 310 and the second cathode layer 320 with the second mask pattern 330 as an etching-resistant layer, so as to obtain a patterned second organic light emitting layer 311 and a patterned second cathode 321 that are stacked together;
the second organic light emitting layer 310 and the second cathode layer 320 are etched with the second mask pattern 330 as an etching-resistant layer, so as to pattern the second organic light emitting layer 310 and the second cathode layer 320, thereby obtaining a patterned second organic light emitting layer 311 and a patterned second cathode 321 (refer to fig. 9) that are stacked together. And the patterned first cathode 221 is deposited on the patterned first organic light emitting layer 211, so that when the second organic light emitting layer 310 and the second cathode layer 320 are etched, the patterned first cathode 221 can be used to provide protection for the patterned first organic light emitting layer 211, damage to the patterned first organic light emitting layer 211 is avoided, and the influence of etching on the first cathode layer 220 is reduced by setting the thickness of the first cathode layer 220 to be 150-300nm, so that the reliability of the manufactured display panel is improved.
Step S60, removing the second mask pattern 330, sequentially depositing a third organic light emitting layer 410 and a third cathode layer 420 on the array substrate 100, forming a third photoresist layer on the third cathode layer 420, and patterning the third photoresist layer to obtain a third mask pattern 430 above the third opening 133;
removing the second mask pattern 33032 (see fig. 10), further depositing a third organic light emitting layer 410 on the array substrate 100, and further depositing a third cathode layer 420 on the third organic light emitting layer 410 (see fig. 11); coating photoresist on the third cathode layer 420 to form a third photoresist layer; the third photoresist layer is then patterned to obtain a third mask pattern 430 (see fig. 12) over the third opening 133.
In one possible embodiment, the thickness of the third organic light emitting layer 410 is 100-300nm; the third organic light emitting layer 410 is any one of a red organic light emitting layer, a green organic light emitting layer, and a blue organic light emitting layer, and is different in color from the first organic light emitting layer 210 and the second organic light emitting layer 310.
In another possible embodiment, the third cathode layer 420 includes: one or more of silver, aluminum, magnesium aluminum alloy, indium tin oxide and indium zinc oxide, and the thickness is 50-200nm.
In yet another possible embodiment, the deposition process of the third organic light emitting layer 410 is an evaporation process, and the deposition process of the third cathode layer 420 is an evaporation process or a magnetron sputtering process.
Illustratively, the third photoresist layer is a positive photoresist; such as diazonaphthoquinone phenolic resin photoresists.
Step S70, etching the third organic light emitting layer 410 and the third cathode layer 420 with the third mask pattern 430 as an etching-resistant layer, so as to obtain a patterned third organic light emitting layer 411 and a patterned third cathode 421 that are stacked together;
the third organic light emitting layer 410 and the third cathode layer 420 are etched with the third mask pattern 430 as an etching-resistant layer to pattern the third organic light emitting layer 410 and the third cathode layer 420, thereby obtaining a patterned third organic light emitting layer 411 and a patterned third cathode 421 (refer to fig. 13). And the patterned first organic light emitting layer 211 and the patterned second organic light emitting layer 311 are respectively deposited with the patterned first cathode 221 and the patterned second cathode 321, so that when the third organic light emitting layer 410 and the third cathode layer 420 are etched, the patterned first cathode 221 and the patterned second cathode 321 can be utilized to respectively provide protection for the patterned first organic light emitting layer 211 and the patterned second organic light emitting layer 311, damage to the patterned first organic light emitting layer 211 and the patterned second organic light emitting layer 311 is avoided, and the thickness of the first cathode layer 220 is set to be 150-300nm, the thickness of the second cathode layer 320 is set to be 100-250nm, the influence of etching on the first cathode layer 220 and the second cathode layer 320 is reduced by a larger thickness, the thicknesses of the patterned first cathode 221, the patterned second cathode 321 and the patterned third cathode 421 obtained after etching are approximately equal, and the reliability of the manufactured display panel is improved.
In step S80, the third mask pattern 430 is removed, and the auxiliary electrode 500 is deposited on the array substrate 100, so that the patterned first cathode 221, the patterned second cathode 321 and the patterned third cathode 421 are connected to form a display panel.
The third mask pattern 430 is removed (referring to fig. 14), and the auxiliary electrode 500 is deposited on the array substrate 100 to connect the patterned first cathode 221, the patterned second cathode 321, and the patterned third cathode 421, thereby manufacturing a display panel.
The deposition process of the auxiliary electrode 500 is, for example, an evaporation process or a magnetron sputtering process.
In a possible embodiment, the auxiliary electrode 500 includes: one or more of silver, aluminum, magnesium aluminum alloy, indium tin oxide and indium zinc oxide, and the thickness is 200-400nm.
In another possible embodiment, in step S80, the step of depositing the auxiliary electrode 500 on the array substrate 100 includes:
in step S81, a fine metal mask is disposed on the array substrate 100, so that the auxiliary electrode 500 is deposited on a non-open area on the array substrate 100, where the non-open area is an area of the array substrate 100 except for the first opening 131, the second opening 132, and the third opening 133.
A fine metal mask is disposed on the array substrate 100, and the auxiliary electrode 500 is deposited, so that the auxiliary electrode 500 is deposited on a non-opening area on the array substrate 100 (refer to fig. 15), wherein the non-opening area is an area of the array substrate 100 except for the first opening 131, the second opening 132 and the third opening 133, i.e. an area without an organic light emitting layer.
In this embodiment, although the fine metal mask is used, the fine metal mask is used only once in the whole process flow of manufacturing the display panel, so that the manufacturing cost can still be reduced compared with the conventional manufacturing method of the display panel.
In still another possible embodiment, step S80, the step of depositing the auxiliary electrode 500 on the array substrate 100 includes:
in step S82, the auxiliary electrode 500 is deposited on the entire layer of the array substrate 100.
The auxiliary electrode 500 is deposited on the entire layer of the array substrate 100, so that an auxiliary electrode 500 layer is formed on the array substrate 100.
In the present embodiment, by providing an array substrate 100, a pixel defining layer 110 and a pixel anode layer 120 are formed on the array substrate 100; wherein the pixel defining layer 110 has a plurality of pixel openings 130, and the anode of the pixel anode layer 120 exposes the pixel openings 130, and the plurality of pixel openings 130 include a first opening 131, a second opening 132, and a third opening 133; sequentially depositing a first organic light emitting layer 210 and a first cathode layer 220 on the array substrate 100, forming a first photoresist layer on the first cathode layer 220, and patterning the first photoresist layer to obtain a first mask pattern 230 above the first opening 131; and etching the first organic light emitting layer 210 and the first cathode layer 220 with the first mask pattern 230 as an etching resist layer to obtain a patterned first organic light emitting layer 211 and a patterned first cathode 221 stacked together; the etching process is used for replacing a fine metal mask plate required to be used in the conventional display panel preparation process, so that the preparation cost of the display panel is greatly reduced; then, removing the first mask pattern 230, sequentially depositing a second organic light emitting layer 310 and a second cathode layer 320 on the array substrate 100, forming a second photoresist layer on the second cathode layer 320, and patterning the second photoresist layer to obtain a second mask pattern 330 above the second opening 132; further, the second mask pattern 330 is used as an anti-etching layer, and the second organic light emitting layer 310 and the second cathode layer 320 are etched to obtain a patterned second organic light emitting layer 311 and a patterned second cathode 321 which are stacked together; because the patterned first cathode 221 is deposited on the patterned first organic light emitting layer 211, the patterned first organic light emitting layer 211 can be well protected from being damaged in the process of etching the second organic light emitting layer 310 and the second cathode layer 320, so as to ensure the quality of the prepared display panel; then, removing the second mask pattern 330, sequentially depositing a third organic light emitting layer 410 and a third cathode layer 420 on the array substrate 100, forming a third photoresist layer on the third cathode layer 420, and patterning the third photoresist layer to obtain a third mask pattern 430 located above the third opening 133; further, the third mask pattern 430 is used as an etching resist layer, and the third organic light emitting layer 410 and the third cathode layer 420 are etched to obtain a patterned third organic light emitting layer 411 and a patterned third cathode 421 which are stacked together; because the patterned first cathode 221 is deposited on the patterned first organic light emitting layer 211 and the patterned second cathode 321 is deposited on the patterned second organic light emitting layer 311, the patterned first organic light emitting layer 211 and the patterned second organic light emitting layer 311 can be well protected from being damaged in the process of etching the third organic light emitting layer 410 and the third cathode layer 420, so that the quality of the prepared display panel is ensured; and then removing the third mask pattern 430, and depositing an auxiliary electrode 500 on the array substrate 100 to connect the patterned first cathode 221, the patterned second cathode 321 and the patterned third cathode 421, thereby manufacturing a display panel. The conventional fine metal mask is replaced by the etching process to prepare the display panel, so that the preparation process cost of the display panel is greatly reduced, and in the etching process, the cathode deposited on the organic light-emitting layer provides protection for the organic light-emitting layer, so that the condition that the patterned organic light-emitting layer on the array substrate 100 is damaged in the patterning process of the next organic light-emitting layer is avoided, and the production quality and reliability of the prepared display panel are improved.
The foregoing is merely a preferred embodiment of the present application and is not intended to limit the scope of the present application, but various modifications and variations will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the present application.
Claims (10)
1. A method for manufacturing a display panel, comprising the steps of:
providing an array substrate, and forming a pixel definition layer and a pixel anode layer on the array substrate; the pixel definition layer is provided with a plurality of pixel openings, the anodes of the pixel anode layers are exposed out of the pixel openings, and the pixel openings comprise a first opening, a second opening and a third opening;
sequentially depositing a first organic light-emitting layer and a first cathode layer on the array substrate, forming a first photoresist layer on the first cathode layer, and patterning the first photoresist layer to obtain a first mask pattern above the first opening;
etching the first organic light-emitting layer and the first cathode layer by taking the first mask pattern as an etching-resistant layer to obtain a patterned first organic light-emitting layer and a patterned first cathode which are stacked together;
removing the first mask pattern, sequentially depositing a second organic light-emitting layer and a second cathode layer on the array substrate, forming a second photoresist layer on the second cathode layer, and patterning the second photoresist layer to obtain a second mask pattern above the second opening;
etching the second organic light-emitting layer and the second cathode layer by taking the second mask pattern as an etching-resistant layer to obtain a patterned second organic light-emitting layer and a patterned second cathode which are stacked together;
removing the second mask pattern, sequentially depositing a third organic light-emitting layer and a third cathode layer on the array substrate, forming a third photoresist layer on the third cathode layer, and patterning the third photoresist layer to obtain a third mask pattern above the third opening;
etching the third organic light-emitting layer and the third cathode layer by taking the third mask pattern as an etching-resistant layer to obtain a patterned third organic light-emitting layer and a patterned third cathode which are stacked together;
and removing the third mask pattern, and depositing an auxiliary electrode on the array substrate to connect the patterned first cathode, the patterned second cathode and the patterned third cathode, so as to obtain the display panel.
2. The method of manufacturing a display panel according to claim 1, wherein the first cathode layer has a thickness of 150 to 300nm, the second cathode layer has a thickness of 100 to 250nm, and the third cathode layer has a thickness of 50 to 200nm.
3. The method of manufacturing a display panel according to claim 1, wherein the step of depositing an auxiliary electrode on the array substrate comprises:
and setting a fine metal mask on the array substrate so that the auxiliary electrode is deposited in a non-opening area on the array substrate, wherein the non-opening area is an area of the array substrate except for the first opening, the second opening and the third opening.
4. The method of manufacturing a display panel according to claim 1, wherein the step of depositing an auxiliary electrode on the array substrate further comprises:
and depositing the auxiliary electrode on the whole layer of the array substrate.
5. The method of manufacturing a display panel according to claim 1, wherein the first organic light emitting layer, the second organic light emitting layer, and the third organic light emitting layer are organic light emitting layers of different colors including red, green, and blue.
6. The display panel manufacturing method of claim 1, wherein the first cathode layer, the second cathode layer, and the third cathode layer comprise: one or more of silver, aluminum, magnesium aluminum alloy, indium tin oxide, and indium zinc oxide.
7. The display panel manufacturing method of claim 1, wherein the auxiliary electrode comprises: one or more of silver, aluminum, magnesium aluminum alloy, indium tin oxide and indium zinc oxide, and the thickness is 200-400nm.
8. The method of manufacturing a display panel according to claim 1, wherein the deposition process of the first organic light emitting layer, the second organic light emitting layer, and the third organic light emitting layer is an evaporation process.
9. The method of manufacturing a display panel according to claim 1, wherein the deposition process of the first cathode, the second cathode, and the third cathode is an evaporation process or a magnetron sputtering process.
10. A display panel, characterized in that it is manufactured by a method according to any one of claims 1-9.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022948A (en) * | 2016-10-31 | 2018-05-11 | 乐金显示有限公司 | Organic light-emitting display device and its manufacture method |
| US20190115565A1 (en) * | 2017-10-18 | 2019-04-18 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of manufacturing oled element and an oled element |
| WO2019085045A1 (en) * | 2017-10-30 | 2019-05-09 | 武汉华星光电技术有限公司 | Preparation method for oled anode and preparation method for oled display device |
| CN109742125A (en) * | 2019-01-11 | 2019-05-10 | 京东方科技集团股份有限公司 | Production method, array substrate, display panel and the display device of array substrate |
| CN111430428A (en) * | 2020-04-10 | 2020-07-17 | 京东方科技集团股份有限公司 | Flexible display panel, manufacturing method thereof and display device |
| CN113571664A (en) * | 2021-07-22 | 2021-10-29 | 武汉天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| US20210367186A1 (en) * | 2019-06-21 | 2021-11-25 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display panel and manufacturing method |
| CN113921585A (en) * | 2021-12-14 | 2022-01-11 | 惠科股份有限公司 | Display panel and preparation method thereof |
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022948A (en) * | 2016-10-31 | 2018-05-11 | 乐金显示有限公司 | Organic light-emitting display device and its manufacture method |
| US20190115565A1 (en) * | 2017-10-18 | 2019-04-18 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of manufacturing oled element and an oled element |
| WO2019085045A1 (en) * | 2017-10-30 | 2019-05-09 | 武汉华星光电技术有限公司 | Preparation method for oled anode and preparation method for oled display device |
| CN109742125A (en) * | 2019-01-11 | 2019-05-10 | 京东方科技集团股份有限公司 | Production method, array substrate, display panel and the display device of array substrate |
| US20210367186A1 (en) * | 2019-06-21 | 2021-11-25 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display panel and manufacturing method |
| CN111430428A (en) * | 2020-04-10 | 2020-07-17 | 京东方科技集团股份有限公司 | Flexible display panel, manufacturing method thereof and display device |
| CN113571664A (en) * | 2021-07-22 | 2021-10-29 | 武汉天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN113921585A (en) * | 2021-12-14 | 2022-01-11 | 惠科股份有限公司 | Display panel and preparation method thereof |
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