CN1168686C - Field diffusion method for connecting ceramics coated with non-crystal oxide film with metal - Google Patents
Field diffusion method for connecting ceramics coated with non-crystal oxide film with metal Download PDFInfo
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- CN1168686C CN1168686C CNB021239622A CN02123962A CN1168686C CN 1168686 C CN1168686 C CN 1168686C CN B021239622 A CNB021239622 A CN B021239622A CN 02123962 A CN02123962 A CN 02123962A CN 1168686 C CN1168686 C CN 1168686C
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- metal
- pottery
- oxide film
- crystal oxide
- stove
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Abstract
The patent of the present invention proposes a connection method of metal and ceramic coated with a non-crystal oxide film, which belongs to the technical field of the connection of the ceramic and the metal. In order to overcome the technical problems that in traditional connection methods of the ceramic and the metal, connecting temperature is high, vacuum degrees are high, and equipment is complex, the connection method of the present invention comprises: the ceramic 5 coated with the non-crystaloxide film 4 and the metal 3 are stacked with and then positioned in a connecting stove 1 which is provided with a DC direct field whose voltage is 100 to 300V. The present invention has the advantages that the connecting temperature is 200 to 500 DEG C, retention time is 5 to 15 minutes, connecting pressure is 50 pa, the atmosphere in the connecting stove 1 is air or low vacuum which is below 10<-2>Pa. In addition, the method of the present invention is mainly used for connecting the ceramic with the metal in a precise IC product.
Description
Technical field
The deposited pottery of putting non-crystal oxide film that patent of the present invention proposes belongs to the ceramic technical field that is connected with metal with the field diffusion method for connecting of metal, particularly relates to being connected of pottery and metal in the IC product.
Background technology
The class pottery that latest developments are got up is the ceramic surface metallic cementation that at first desire is connected with the method for attachment of metal, metallization or employing pottery and intermetallic intermediate metal etc., thereafter pottery carries out High temperature diffusion with metal and is connected, though this class pottery can form good jointing with the method for attachment of metal, but since the connection temperature of having relatively high expectations when connecting be connected pressure, connect temperature and be about 500-900 ℃, and require under high vacuum condition, to spread connection, this high temperature, high pressure is totally unfavorable to meticulous IC product, and, high temperature, high pressure and high vacuum also make coupling device complicated, and cost increases.
Summary of the invention
In order to overcome the deficiency that exists in the above-mentioned background technology, patent of the present invention proposes a kind of new efficient, the economic pottery and the method for attachment of metal, and this method is:
1, the method for attachment of a kind of pottery and metal is characterized in that, applies the pottery put non-crystal oxide film and metal and carries out the field and cause to spread and be connected, and this method comprises:
Apply the 3 pairs of poststacks of pottery 5 and metal put non-crystal oxide film 4 place have voltage be the DC electric field that lies prostrate of 100-300 be connected stove 1, connecting temperature is 200-500 ℃, hold-time is 5-15 minute, connection pressure is 50Pa, atmosphere is air or the rough vacuum that is lower than 10-2Pa in the connection stove 1, pottery 5 is connected with metal 3 finish after, web member cools off with connection stove 1, speed of cooling is 4 ℃/minute.
Wherein, the material of non-crystal oxide film 4 is sodium oxide, boron oxide, magnesium oxide, silicon oxide and composite oxides SiO
260-70%, Na
2O 5-15%, MgO+CaO+ZnO 10-15%, composite oxides Na
2O
33%, ZnO 1.5%, B
2O
33%, all the other are SiO
2In any.
Wherein, the material of pottery 5 is β-Al
2O
3, MgO Y-ZrO
2And composition thereof in any.
Wherein, the material of metal 3 is any among Al, Cu, Ni, Si, Ti and Co, Ag, the W.
2, in aforesaid method, the thickness of the non-crystal oxide film 4 of pottery 5 is 1-3 μ m, surfaceness＜1 μ m.
3, in aforesaid method, adopt one of following method that non-crystal oxide film 4 is applied and put: vacuum sputtering, vacuum vapour deposition, chemical Vapor deposition process and electrochemical plating on ceramic 5 surfaces.
The method that the present invention proposes is with the positively effect that the pottery of general ceramic surface metallization or employing intermediate metal transition layer is compared with the method for attachment of metal:
Realize with operating pressure and under air or rough vacuum condition that in relatively low connection temperature pottery causes diffusion with the field of metal and is connected, this IC product to precision is very favourable, and can simplify coupling device, reduces cost.
Present method is mainly used in being connected of pottery and metal in the accurate IC product.
Description of drawings
Fig. 1 patent of the present invention proposes the deposited pottery of putting non-crystal oxide film and metal cause diffusion connecting mechanism figure.
As shown in Figure 1, deposited 3 pairs of poststacks of pottery 5 and metal of putting non-crystal oxide film 4 place and are connected stove 1, this metal 3 is connected with positive source by anode conducting plate 2, pottery 5 is connected with power cathode by negative electrode conductive plate 6, applying like this pottery 5 of putting non-crystal oxide film 4 just is in the direct current electric field of 100-300 volt with metal 3, this pottery 5 and metal 3 also are subjected to the effect of the Bonding pressure P of 50Pa, the connection temperature that connects in the stove 1 is 200-500 ℃, retention time is 5-15 minute, and the atmosphere in the connection stove 1 is for being lower than 10-2The low vacuum of Pa or air, pottery 5 has been connected with metal 3 Behind the one-tenth, connect part with connecting stove 1 cooling, cooling speed is 4 ℃/minute.
Deposited field of putting pottery 5 with the metal 3 of non-crystal oxide film 4 among following analytic explanation the present invention Cause diffusion and connect mechanism.
In this connection method, be connected pottery in the material under electric field action, form the ion polarization, Migration and bonding produce the molecular heat diffusion simultaneously at a certain temperature, and its result is at pottery and metal The surface on form the solid phase connection joint that is formed by connecting.
But, because Al2O
3、ZrO
2The chemical stability of the pottery that forms Deng material is high, generation The field cause the bonding effect a little less than, apply when putting non-crystal oxide film when the interface of pottery, will make ceramic boundary The anion mobility of face improves, thereby promotes the bonding of pottery and metal interface.
Like this, this kind causes electrostatic bonding as main take the field, and thermal diffusion is the auxiliary deposited non-crystal oxide film of putting Being connected just to form and firmly connecting joint of pottery and metal.
Cause bonding and play a major role the thermal diffusion combination just because of cause diffusion connection process midfield in this kind field Play booster action, therefore, this method is compared with the method that is connected of metal with general pottery, can Significantly reduce and connect temperature and operating pressure.
This kind " field causes electrostatic bonding " is in fact a kind of electrochemical " anode oxidation process ", Originally just required enough oxygen supplies of amount in this process, generally speaking, the negative oxygen ion in the pottery Just enough, if in the atmosphere that connects stove, provide oxygen, for example in air or in low vacuum, advance Row pottery is connected with metal, and to connecting not significantly impact of quality, this gets in practice To confirming, also to be exactly the deposited pottery of putting non-crystal oxide film that proposes of the present invention cause with the field of metal for this Diffusion connection method can be in low vacuum even the reason of carrying out in air.
Can clearly be seen that from the explanation of above connection mechanism connection method that the present invention proposes is connected the basic difference below existing in the method with general thermal diffusion:
1, in the method that the present invention proposes, ceramic interface is the amorphous state oxide-film, and general thermal diffusion Ceramic interface is for oozing metal level, metal layer or adopting intermediate metal in the method, and these are equal Be general crystalline state.
2, ceramic in the method that the present invention proposes is to cause bonding take the field as main with being connected of metal, and general The thermal diffusion method in mainly be the thermal diffusion combination.
Embodiment
1, ceramic Y-ZrO
2Causing diffusion with the field of fine aluminium sheet is connected
Pottery Y-ZrO
2Contain 8% Y
2O
3, sample dimensions φ 20, thickness 0.5-1.0mm, and magnetic control ion sputtering method plating SiO is adopted on pottery 5 surfaces
2Amorphous film, thickness 2 μ m, plating non-crystalline state SiO
23 pairs of poststacks of the pottery of film and fine aluminium sheet put into voltage be 200 volts be connected stove 1, wherein, pottery 5 is connected with the negative pole of power supply by anode conducting plate 6, and fine aluminium sheet 3 is connected with positive source by anode conducting plate 2, connect and connect 500 ℃ of temperature in the stove 1, connect pressure 50Pa, 10 minutes tie-time, the atmosphere that connects stove 1 is the rough vacuum of 10-2Pa, and connection is finished rear connectors and cooled off with 4 ℃ of/minute cooling rates with stove.
Pottery Y-ZrO
2Be connected well the slip resistance 16Mpa of jointing with the fine aluminium sheet.
2, ceramic β-Al
2O
3Causing diffusion with pure silicon single crystal film studio is connected
Pottery β-Al
2O
3Contain 3% Na
2O, sample dimensions is with 1, ceramic β-Al
2O
3The surface adopts the magnetic control ion sputtering to plate a kind of amorphous composite oxides, and it is Na that these composite oxides are formed part
2O
33%, ZnO1.5%, B
2O
33%, all the other are SiO
2, 3 pairs of poststacks of pottery 5 and pure monocrystalline silicon piece of plating non-crystalline state oxide film 4 are put into be connected stove 1, employing and the 1 identical standard that is connected, the slip resistance of the jointing of the web member that finally obtains is 29Mpa.
Claims (3)
1, the method for attachment of a kind of pottery and metal is characterized in that, applies the pottery put non-crystal oxide film and metal and carries out the field and cause to spread and be connected, and this method comprises:
Apply the pottery (5) put non-crystal oxide film (4) and metal (3) to poststack place have voltage be the DC electric field that lies prostrate of 100-300 be connected stove (1), connecting temperature is 200-500 ℃, hold-time is 5-15 minute, connection pressure is 50Pa, connects the middle atmosphere of stove (1) and is air or is lower than 10
-2The rough vacuum of Pa, pottery (5) is connected with metal (3) finish after, web member cools off with connection stove (1), speed of cooling is 4 ℃/minute;
The material of above-mentioned non-crystal oxide film (4) is sodium oxide, boron oxide, magnesium oxide, silicon oxide and composite oxides SiO
260-70%, Na
2O 5-15%, MgO+CaO+ZnO 10-15%, composite oxides Na
2O 3%, ZnO 1.5%, B
2O
33%, all the other are SiO
2In any;
The material of above-mentioned pottery (5) is β-Al
2O
3, MgO, Y-ZrO
2And composition thereof in any;
The material of above-mentioned metal 3 is any among Al, Cu, Ni, Si, Ti and Co, Ag, the W.
2, the method for attachment of pottery according to claim 1 and metal is characterized in that, the thickness of the non-crystal oxide film (4) of pottery (5) is 1-3 μ m, surfaceness＜1 μ m.
3, the method for attachment of pottery according to claim 1 and metal, it is characterized in that, adopt one of following method that non-crystal oxide film (4) is applied and put on pottery (5) surface: vacuum sputtering, vacuum vapour deposition, chemical Vapor deposition process and electrochemical plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021239622A CN1168686C (en) | 2002-07-10 | 2002-07-10 | Field diffusion method for connecting ceramics coated with non-crystal oxide film with metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021239622A CN1168686C (en) | 2002-07-10 | 2002-07-10 | Field diffusion method for connecting ceramics coated with non-crystal oxide film with metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1386723A CN1386723A (en) | 2002-12-25 |
| CN1168686C true CN1168686C (en) | 2004-09-29 |
Family
ID=4745275
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021239622A Expired - Fee Related CN1168686C (en) | 2002-07-10 | 2002-07-10 | Field diffusion method for connecting ceramics coated with non-crystal oxide film with metal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1168686C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104692676B (en) * | 2015-02-15 | 2017-01-18 | 太原理工大学 | Electric-field-assisted diffusion bonding device and method for glass tubes and metal plates |
| CN105364284B (en) * | 2015-12-04 | 2017-08-08 | 西北工业大学 | A kind of zirconium oxide or the low temperature fast welding method for aoxidizing zirconium based composite material |
-
2002
- 2002-07-10 CN CNB021239622A patent/CN1168686C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1386723A (en) | 2002-12-25 |
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