CN116865854B - Wavelength detection device capable of being integrated on photon integrated chip - Google Patents
Wavelength detection device capable of being integrated on photon integrated chip Download PDFInfo
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- CN116865854B CN116865854B CN202311126679.4A CN202311126679A CN116865854B CN 116865854 B CN116865854 B CN 116865854B CN 202311126679 A CN202311126679 A CN 202311126679A CN 116865854 B CN116865854 B CN 116865854B
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- mzi
- mzis
- detection device
- wavelength
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- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims abstract description 27
- 238000005259 measurement Methods 0.000 claims abstract description 26
- 229920005560 fluorosilicone rubber Polymers 0.000 claims abstract description 12
- 230000003595 spectral effect Effects 0.000 claims description 7
- 238000004891 communication Methods 0.000 abstract description 8
- 238000000411 transmission spectrum Methods 0.000 description 8
- 238000012806 monitoring device Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- APQPGQGAWABJLN-UHFFFAOYSA-N Floctafenine Chemical group OCC(O)COC(=O)C1=CC=CC=C1NC1=CC=NC2=C(C(F)(F)F)C=CC=C12 APQPGQGAWABJLN-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
- H04B10/07957—Monitoring or measuring wavelength
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
- G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
- G01J9/0246—Measuring optical wavelength
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
Abstract
The invention discloses a wavelength detection device capable of being integrated on a photon integrated chip, which comprises a plurality of groups of MZIs, wherein each group of MZIs comprises two asymmetric MZIs, and each MZI is provided with an optical measurement device PD for measuring the output light intensity of the MZI; the two MZIs in each set have the same FSR, with a phase difference set to pi/2. Different sets of MZI have different FSRs between them. The device can be arranged at the outlet of the tunable laser, and the wavelength of the tunable laser can be resolved by a small part of light splitting, so that high-precision measurement in the whole wavelength range can be realized. The device has important application prospect in the fields of optical communication, optical sensing and other fields.
Description
Technical Field
The invention belongs to the field of optical communication, and particularly relates to a wavelength detection device capable of being integrated on a photon integrated chip.
Background
In an optical communication system, optical signals are transmitted over different wavelengths. In a typical optical communication system, wavelengths may be used up to several hundred different wavelengths. The accuracy of the wavelength is very important for the accurate transmission of signals, and therefore, it is essential to monitor the wavelength, and accordingly, it is essential to equip an optical communication system with a device or equipment having a wavelength monitoring function.
In recent years, tunable lasers are widely used in the field of optical communications, and after the tunable lasers are used in combination with devices such as transceivers, multiplexers, splitters, etc., flexible wavelength networks can be realized, which improves the flexibility of an optical communication system relative to fixed wavelength networks. However, since the relationship between the electrical drive signal and the output frequency of the tunable laser is affected by multiple factors, the initially calibrated tunable laser may be misaligned after a period of operation, and thus real-time calibration of the tunable laser by the wavelength monitoring device is required.
The traditional optical module wavelength monitoring instrument is an idalon (etalon) device. In the case of such devices, the output of the tunable laser splits a small fraction of the light by optical coupling to a wavelength monitoring device, which achieves control of the wavelength of the tunable laser by measuring the split wavelength in real time. However, the idalon belongs to independent equipment because of the large size of the idalon, and cannot be integrated on a photon integrated chip.
A typical wavelength monitoring device includes one or more calibrated wavelength filters and a set of photodetectors. For example, the first photodetector of the wavelength monitoring device may be a power monitor for measuring the optical power of the extracted portion of the light beam. The second photodetector of the wavelength monitoring device may be located at the output of one or more calibrated wavelength filters for measuring the optical power of another portion of the optical beam passing through the one or more calibrated wavelength filters. The ratio of the first photodetector measurement to the second photodetector measurement may be used to generate a control signal. The control signal may be wavelength dependent and independent of the optical power, which makes it possible to use it for calibrating a tunable laser. In other words, by comparison with the target calibration value, an error measurement can be derived from the value of the control signal, thereby enabling calibration of the tunable laser. However, due to the limitation of the sensitivity of the photodetectors of the wavelength monitoring device, an accurate calibration of the control signal can only be performed over a limited wavelength range.
The Lumentum company published a patent document US20190137687A1, the structure of which is shown in fig. 1. In this patent document, the silicon photonics module is designed to include a waveguide for receiving and transmitting the light beam. The waveguide is connected to a splitter for splitting the light beam into two parts, a first part and a second part. The first part is filtered by a first Mach-Zehnder interferometer (Mach-Zehnder Interferometer, MZI) and the filtered optical power is measured; the second fraction is filtered through a second MZI and the filtered optical power is measured. The first MZI and the second MZI have the same free spectral range (Free Spectral Range, FSR) but have peak transmission frequencies shifted by 1/4 of the FSR. The technical scheme of the patent document can ensure that the precision of wavelength measurement in the measurement range is kept unchanged, but the wavelength measurement range is limited by an FSR, and the accurate wavelength tunable range of the tunable laser is limited.
Disclosure of Invention
In view of the above problems in the prior art, the present invention proposes a wavelength detection device that can be integrated on a photonic integrated chip, including two asymmetric mach-zehnder interferometers (MZI), each MZI being equipped with an optical measurement device PD for measuring the output light intensity of the MZI; the two MZIs have the same Free Spectral Range (FSR) with a phase difference set to pi/2.
Preferably, the two MZI form a set of MZI, and the detection means comprises a plurality of sets of MZI.
More preferably, two sets of MZI are provided in the detection device.
More preferably, three sets of MZI are provided in the detection device.
Preferably, there are different FSRs between different sets of MZIs.
Preferably, the FSR between the different sets of MZIs is a proportional integer multiple.
More preferably, when two sets of MZI are provided in the detection device, the FSR of one set of MZI is set to 10 times the FSR of the other set of MZI; when three sets of MZI are provided in the detection device, the FSR of the first set of MZI is set to 10 times the FSR of the second set of MZI, 100 times the FSR of the third set of MZI.
The beneficial technical effects of the invention are as follows: the invention provides a wavelength detection device which can be integrated on a photon integrated chip, and the device can be arranged at an outlet of a tunable laser, and the wavelength of the device can be resolved by a small part of light splitting. By using an asymmetric MZI and different FSRs and phase differences, the present invention achieves high accuracy measurements over the entire wavelength range. The device has important application prospect in the fields of optical communication, optical sensing and other fields.
Drawings
FIG. 1 is a prior art silicon light test block diagram;
FIG. 2 is a graph of transmission spectra of two MZIs of FIG. 1;
FIG. 3 is a diagram illustrating a silicon light test structure according to an embodiment of the present invention;
FIG. 4 is a graph showing the readings of two light measuring devices PD at different wavelengths passed in an embodiment of the invention;
fig. 5 shows the readings of four light measuring devices PD when different wavelengths pass through in the embodiment shown in fig. 3.
Detailed Description
Specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
It should be understood that the described embodiments are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, in the prior art solution, two MZI are included, each MZI is equipped with an optical measuring device PD for measuring the output light intensity of the MZI. The first MZI and the second MZI have the same free spectral range (Free Spectral Range, FSR) but have peak transmission frequencies shifted by 1/4 of the FSR. In the device shown in fig. 1, when the light beam passes through the MZI, the light of different wavelengths has different transmittances, forming a transmission spectrum similar to a cosine function, as illustrated in fig. 2, so the wavelength of the incident light can be measured by the transmission spectrum. But when the transmission spectrum is at specific values, i.e. the phase difference of the two arms of the MZI is 0 or pi, the change in the transmittance versus wavelength response is very slow around these specific values. Therefore, the accuracy of measuring the wavelength of incident light by transmission spectrum may be degraded. Therefore, in an embodiment of the wavelength detection device capable of being integrated on a photonic integrated chip according to the present invention, the phase difference between two MZI is set to pi/2, in which case, when the measurement accuracy of one MZI is low, the other MZI has just high measurement accuracy, i.e. the optical power variation thereof is in a relatively linear elevation region. Fig. 2 shows the transmission spectra of two such MZI with a phase difference of pi/2, it being seen that in both MZI, by compensating each other, a uniform measurement accuracy can be ensured over the entire measurement range.
Since the transmission spectrum has the repeatability of the cosine function, the same two optical measurement device PD readings combine and repeat after passing through the 2pi phase, which makes wavelength resolution difficult. Thus, in a further preferred embodiment of the present invention, two MZI are added to the device structure of fig. 1, i.e. four MZI are included, as shown in fig. 3. The four MZIs (MZI 1-MZI 4) are asymmetric, with MZI1 and MZI2 being the first set and MZI3 and MZI4 being the second set. The MZI in each group has the same Free Spectral Range (FSR), i.e., the FSR of MZI1 and MZI2 are the same, and the FSR of MZI3 and MZI4 are the same. Each MZI is equipped with an optical measuring device PD for measuring the output light intensity of the four MZI, respectively.
Fig. 4 shows the readings of two light measuring devices PD when different wavelengths pass through the device of the embodiment shown in fig. 3. These readings may be constructed as a look-up table for determining the wavelength. As can be seen from fig. 4, the measurement accuracy of the wavelength is uniform over the entire measurement range.
In the embodiment shown in fig. 3, it is more preferable to have different FSRs between different sets of MZI. The FSR between the different sets of MZI may preferably be set to be a proportional integer multiple, e.g. the FSR of the first set may be set to be 10 times that of the second set. The specific multiple value is set according to the actual measurement requirement. In this way, the wavelength range of the light can be roughly resolved by the intensity of the outgoing light from the first set of MZIs and further subdivided by the second set of MZIs, which can expand the resolution range of the detector and ensure that a highly accurate measurement is provided over the entire measurement range. Fig. 5 shows transmission spectra of four PDs over the entire measurement range.
In the present invention, in order to improve the measurement range, in other embodiments, a flexible setting of the MZI group number is proposed. In addition to providing two sets of MZIs in the above embodiments, multiple sets of MZIs may be provided, each set including two MZIs. Such as three MZI, four MZI, etc. By integrating more sets of MZI, the wavelength measurement range can be further extended.
The FSR is different between each set of MZIs, so when multiple sets of MZIs are provided, it is preferable to set the FSR between the different sets of MZIs to be a proportional integer multiple, e.g., the FSR of the first set may be set to be 10 times that of the second set, 100 times that of the third set, etc. The specific multiple value is set according to the actual measurement requirement.
Of course, the FSR between the MZI groups in the above embodiment may be set in a non-proportional multiple, so long as the FSR between the different groups can be satisfied, and the FSR may be set according to the actual measurement range and the accuracy requirement.
The measuring device of the present invention can be applied to an optical chip based on Silicon-on-oxide (Silicon-on-insulator), silicon nitride, silicon oxynitride or Silicon oxide as a waveguide structure.
The foregoing is merely illustrative of embodiments of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (7)
1. A wavelength detection device integrated on a photon integrated chip comprises two asymmetric Mach-Zehnder interferometers (MZIs), wherein each MZI is provided with an optical measurement device (PD) for measuring the output light intensity of the MZI; the two MZI have the same free spectral range FSR, characterized by: the phase difference of the two MZIs is set to pi/2.
2. A wavelength detection device integrated on a photonic integrated chip as in claim 1, wherein: the two MZIs form a set of MZIs, and the detection device comprises a plurality of sets of MZIs.
3. A wavelength detection device integrated on a photonic integrated chip as in claim 2, wherein: two groups of MZIs are arranged in the detection device.
4. A wavelength detection device integrated on a photonic integrated chip as in claim 2, wherein: three groups of MZIs are arranged in the detection device.
5. A wavelength detection device integrated on a photonic integrated chip according to any of claims 2-4, characterized in that: different sets of MZI have different FSRs between them.
6. A wavelength detection device integrated on a photonic integrated chip according to any of claims 2-4, characterized in that: the FSR between different sets of MZI is a proportional integer multiple.
7. A wavelength detection device integrated on a photonic integrated chip as in claim 5, wherein: when two sets of MZIs are provided in the detection device, the FSR of one set of MZIs is set to be 10 times that of the other set of MZIs; when three sets of MZI are provided in the detection device, the FSR of the first set of MZI is set to 10 times the FSR of the second set of MZI, 100 times the FSR of the third set of MZI.
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| CN202311126679.4A CN116865854B (en) | 2023-09-04 | 2023-09-04 | Wavelength detection device capable of being integrated on photon integrated chip |
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| CN202311126679.4A CN116865854B (en) | 2023-09-04 | 2023-09-04 | Wavelength detection device capable of being integrated on photon integrated chip |
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| Publication Number | Publication Date |
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| CN116865854A CN116865854A (en) | 2023-10-10 |
| CN116865854B true CN116865854B (en) | 2023-11-14 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919916A (en) * | 2016-10-10 | 2018-04-17 | 瞻博网络公司 | Integrated wavelength lock |
| US10578494B1 (en) * | 2017-02-10 | 2020-03-03 | Lockheed Martin Coherent Technologies, Inc. | Compact wavelength meter and laser output measurement device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9864144B2 (en) * | 2015-02-04 | 2018-01-09 | Lionix International Bv | Multi-path interferometeric sensor |
| US20220247498A1 (en) * | 2021-01-08 | 2022-08-04 | Rockwell Collins, Inc. | Multi-point self-calibration for broadband optical sensor interrogator |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919916A (en) * | 2016-10-10 | 2018-04-17 | 瞻博网络公司 | Integrated wavelength lock |
| US10578494B1 (en) * | 2017-02-10 | 2020-03-03 | Lockheed Martin Coherent Technologies, Inc. | Compact wavelength meter and laser output measurement device |
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| CN116865854A (en) | 2023-10-10 |
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