CN116865694B - Amplifier temperature compensation circuit - Google Patents
Amplifier temperature compensation circuit Download PDFInfo
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- CN116865694B CN116865694B CN202310696436.8A CN202310696436A CN116865694B CN 116865694 B CN116865694 B CN 116865694B CN 202310696436 A CN202310696436 A CN 202310696436A CN 116865694 B CN116865694 B CN 116865694B
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- Engineering & Computer Science (AREA)
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- Amplifiers (AREA)
Abstract
The invention discloses an amplifier temperature compensation circuit, which comprises a temperature coefficient circuit module and a subtracter circuit module, wherein the temperature coefficient circuit module comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first resistor and a second resistor; the subtracter circuit comprises an operational amplifier and third to sixth resistors, wherein one end of the third resistor is used as an input end of the subtracter circuit module, is connected with an output end of the temperature coefficient circuit, and the other end of the third resistor is connected with one end of a fourth resistor and a forward voltage input end of the operational amplifier; one end of the fifth resistor is connected with the reference voltage, the other end of the fifth resistor is connected with one end of the sixth resistor and the negative voltage input end of the operational amplifier, the other end of the sixth resistor is connected with the output end of the operational amplifier, and the output end of the operational amplifier is used as the output end of the subtracter circuit module and is connected with the amplifier to be compensated. The invention can compensate the gain difference of the amplifier at different temperatures by modulating the bias voltage of the amplifier.
Description
Technical Field
The invention belongs to the technical field of amplifier design, and particularly relates to an amplifier temperature compensation circuit.
Background
In recent years, with the rapid development of wireless communication technology, the demands of various industries for information-based data transmission and processing have increased. Millimeter wave communication has the advantages of wider bandwidth, higher data rate, smaller antenna and the like, is widely applied to the field of radar, guidance and other weaponry, and plays an important role in a radio frequency communication system.
The millimeter wave is utilized to transmit and receive information, so that the amplifying circuit is not separated. However, the performance of FET (field effect transistor) amplifiers can vary drastically at different temperatures, resulting in a significant difference in the gain of the amplifier at different temperatures, which in turn affects the overall performance of the overall link. Therefore, the temperature compensation technology of the amplifier has been a hot spot problem for research in the field of amplifier design.
Disclosure of Invention
The invention aims to provide an amplifier temperature compensation circuit which can compensate gain differences of an amplifier at different temperatures by modulating bias voltages of the amplifier.
An aspect of the present invention provides an amplifier temperature compensation circuit, including a temperature coefficient circuit module and a subtractor circuit module, where an output end of the temperature coefficient circuit module is connected to an input end of the subtractor circuit module, and an output end of the subtractor circuit module is connected to an amplifier to be compensated;
the temperature coefficient circuit module comprises a first transistor, a second transistor, a first resistor and a second resistor, the first transistor and the second transistor are connected together through the grid electrode, and the source electrode is connected with a power supply; the third transistor is connected with the grid electrode of the fourth transistor, and the source electrode of the third transistor is connected with the drain electrodes of the first transistor and the second transistor respectively; the source electrode of the fifth transistor is grounded, the source electrode of the sixth transistor is connected with one end of the first resistor, and the other end of the first resistor is grounded; the seventh transistor is connected with the grid electrode of the eighth transistor, the source electrode is respectively connected with the drain electrodes of the fifth transistor and the sixth transistor, and the drain electrodes are respectively connected with the drain electrodes of the third transistor and the fourth transistor; the grid electrode of the ninth transistor is connected with the grid electrodes of the first transistor and the second transistor, and the source electrode of the ninth transistor is connected with a power supply; the grid electrode of the tenth transistor is connected with the grid electrodes of the third transistor and the fourth transistor, the source electrode of the tenth transistor is connected with the drain electrode of the ninth transistor, the drain electrode of the tenth transistor is connected with one end of the second resistor, and the other end of the second resistor is used as an output end of the temperature coefficient circuit and is connected with the drain electrode of the eleventh transistor; the grid electrode and the drain electrode of the eleventh transistor are connected, and the source electrode is grounded;
the subtracter circuit comprises an operational amplifier and third to sixth resistors, wherein one end of the third resistor is used as an input end of the subtracter circuit module, is connected with an output end of the temperature coefficient circuit, and the other end of the third resistor is connected with one end of the fourth resistor and a positive voltage input end of the operational amplifier; one end of the fifth resistor is connected with a reference voltage, the other end of the fifth resistor is connected with one end of the sixth resistor and the negative voltage input end of the operational amplifier, the other end of the sixth resistor is connected with the output end of the operational amplifier, and the output end of the operational amplifier is used as the output end of the subtracter circuit module and is connected with the amplifier to be compensated.
Preferably, the power supply voltage of the temperature coefficient circuit is set to be direct current 1.8V, and the power supply voltage of the subtractor circuit is set to be direct current 1.8V.
Preferably, the size ratio of the first transistor, the second transistor, the third transistor and the fourth transistor is 1:1.
Preferably, the size ratio of the fifth transistor to the sixth transistor is 1:8.
Preferably, the amplifier is a field effect transistor amplifier, and the output of the subtractor circuit module is connected with the gate of the field effect transistor amplifier.
The amplifier temperature compensation circuit of the above aspect of the present invention can compensate for the gain difference of the amplifier at different temperatures by modulating the bias voltage of the amplifier.
Drawings
For a clearer description of the technical solutions of the present invention, the following description will be given with reference to the attached drawings used in the description of the embodiments of the present invention, it being obvious that the attached drawings in the following description are only some embodiments of the present invention, and that other attached drawings can be obtained by those skilled in the art without the need of inventive effort:
fig. 1 is a block diagram of an amplifier temperature compensation circuit according to an embodiment of the present invention.
Fig. 2 is a block diagram of a temperature coefficient circuit module according to an embodiment of the present invention.
Fig. 3 is a block diagram of a subtractor circuit module according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiments of the present invention provide an amplifier temperature compensation circuit. Fig. 1 is a block diagram of an amplifier temperature compensation circuit according to an embodiment of the present invention. As shown in fig. 1, the temperature compensation circuit of the amplifier according to the embodiment of the invention comprises a temperature coefficient circuit module and a subtracter circuit module, wherein the output end of the temperature coefficient circuit module is connected with the input end of the subtracter circuit module, and the output end of the subtracter circuit module is connected with the amplifier to be compensated.
The temperature coefficient circuit module is used for generating voltage with a required temperature coefficient. Fig. 2 is a block diagram of a temperature coefficient circuit module according to an embodiment of the present invention. The temperature coefficient circuit module of the embodiment of the invention comprises first to eleventh transistors (M1 to M11), a first resistor R1 and a second resistor R2, wherein the first to tenth transistors (M1 to M10), the first resistor R1 and the second resistor R2 form a positive temperature coefficient circuit, and the eleventh transistor M11 forms a negative temperature coefficient circuit.
The positive temperature coefficient circuit can provide a voltage less affected by the power supply voltage, the voltage value of the voltage is increased along with the temperature rise, the negative temperature coefficient circuit can provide a voltage value which is reduced along with the temperature rise, and the voltage value of the specific temperature coefficient can be obtained by superposing the voltage value and the voltage value of the specific temperature coefficient through a certain proportion coefficient.
The positive temperature coefficient circuit part is shown in a left broken line box of fig. 2, adopts a band gap reference circuit structure, the grid electrodes of the first transistor M1 and the second transistor M2 are connected together, the source electrode is connected with a power supply Vcc to form a PMOS current mirror, the size ratio (transistor width-to-length ratio) is 1:1, and the flowing current is also mirrored to be 1:1. The ratio of the tube sizes of the third transistor M3 and the fourth transistor M4 is also 1:1, the gates thereof are connected, and the sources thereof are respectively connected with the drains of the first transistor M1 and the second transistor M2 for inhibiting the channel length modulation effect. The fifth transistor M5 is connected to the gate of the sixth transistor M6, the size ratio of the fifth transistor M5 to the sixth transistor M6 is 1:8, the source of the fifth transistor M5 is grounded, a first resistor R1 is disposed between the source of the sixth transistor M6 and ground, the magnitude of the current in the current mirror is controlled by the first resistor R1, and the current value increases with the rise of temperature and is a positive temperature coefficient current. The gates of the seventh transistor M7 and the eighth transistor M8 are connected, the sources thereof are respectively connected to the drains of the fifth transistor M5 and the sixth transistor M6, the drains thereof are respectively connected to the drains of the third transistor M3 and the fourth transistor M4, and the functions are similar to those of the third transistor M3 and the fourth transistor M4, so as to suppress the channel length modulation effect of the NMOS current mirror. The gate of the ninth transistor M9 is connected to the gates of the first transistor M1 and the second transistor M2, and the source is connected to the power source Vcc to form a current mirror, and the ptc current is mirrored in a certain multiple relationship. The tenth transistor M10 has its gate connected to the gates of the third transistor M3 and the fourth transistor M4, its source connected to the drain of the ninth transistor M9, its drain connected to one end of the second resistor R2, and its output terminal V OUT The symmetry of the current mirror structure is improved while the channel length modulation effect is restrained, so that the current matching is more accurate. The second resistor R2 is used for converting the positive temperature coefficient current into the positive temperature coefficient voltage, and the other end of the second resistor R2 is connected with the drain electrode of the eleventh transistor M11.
As shown in the right dashed box of fig. 2, the threshold voltage of the negative temperature coefficient circuit is reduced with the temperature due to the characteristics of the MOS transistor, so that the gate and the drain of the eleventh transistor M11 of the NMOS transistor are connected, and the source is grounded. The eleventh transistor M11 is connected in a diode form, and is always in a saturated state, so that when the current is basically kept unchanged, the difference between the gate voltage and the source voltage is a negative temperature coefficient voltage, and the negative temperature coefficient voltage is superimposed with a positive temperature coefficient voltage by placing the negative temperature coefficient voltage on the second resistor R2; the magnitude of the negative temperature coefficient of the voltage can be adjusted by adjusting the size of the eleventh transistor M11 to obtain the temperature coefficient required for the custom amplifier. The size ratio of the seventh transistor M7, the eighth transistor M8, the ninth transistor M9, and the tenth transistor M10 may be kept identical to the ratio of the transistors whose sources are connected.
The voltage absolute value and the temperature coefficient of the band gap reference circuit are difficult to accurately customize at the same time, and the temperature coefficient has a certain range, so that the voltage value of a larger temperature coefficient cannot be obtained, and the band gap reference circuit cannot be directly applied to providing bias voltage and cannot meet the modulation requirements of most amplifiers. In order to solve the problem, the temperature compensation circuit of the amplifier of the embodiment of the invention is added with a subtracter circuit module so as to obtain more accurate and wider temperature coefficient and voltage output, thereby meeting the requirement of the bias voltage modulation of the amplifier.
Fig. 3 is a block diagram of a subtractor circuit module according to an embodiment of the present invention. As shown in fig. 3, the subtractor circuit module includes an operational amplifier and third to sixth resistors (R3 to R6), one end of the third resistor R3 is used as an input end of the subtractor circuit module and connected with an output end of the temperature coefficient circuit, and an output voltage of the temperature coefficient circuit is used as an input voltage V of the subtractor circuit module IN The other end of the third resistor R3 is connected with one end of a fourth resistor R4 and the positive input end (voltage V+) of the operational amplifier, and the other end of the fourth resistor R4 is grounded; one end of the fifth resistor R5 is connected with the reference voltage V REF The other end of the fifth resistor R5 is connected with one end of a sixth resistor R6 and the negative input end (voltage V-) of the operational amplifier, the other end of the sixth resistor R6 is connected with the output end of the operational amplifier, and the bias voltage V is output BIAS . The output end of the operational amplifier is used as the output end of the subtracter circuit module and the amplification to be compensatedThe device is connected. And under the condition that the amplifier to be compensated is a field effect transistor amplifier, the output of the subtracter circuit module is connected with the grid electrode of the field effect transistor amplifier.
The positive input end voltage V+ of the operational amplifier is the input voltage V IN The negative input voltage V-is the reference voltage V obtained by the voltage division to the ground of the third resistor R3 and the fourth resistor R4 REF And is divided by the voltage to the output of the fifth resistor R5 and the sixth resistor R6. Because of the virtual short principle of the operational amplifier, the positive input end voltage is equal to the negative input end voltage, a feedback circuit can be constructed, and the multiple operation of the input voltage difference can be realized, so that the output point voltage is the required modulation result at each temperature.
The working process of the amplifier temperature compensation circuit of the embodiment of the invention is as follows:
step 1: the power supply is connected with the signal, and specifically comprises:
step 1.1, setting a positive temperature coefficient circuit, and setting a power supply to be 1.8V direct current;
step 1.2, setting a negative temperature coefficient circuit, and setting a power supply to be 1.8V direct current;
step 1.3, a subtracter circuit module is arranged, and a power supply is set to be 1.8V direct current;
step 1.4, setting an output load, wherein the output end is connected with a grid electrode of a corresponding amplifier and is used as a bias circuit of the corresponding amplifier;
step 2: each module starts working, and specifically comprises:
step 2.1, a positive temperature coefficient circuit works, a current mirror is constructed through an NMOS tube and a PMOS tube, and the current size is determined through the asymmetry of a resistor and a current mirror transistor; after being led out by a current mirror, the current mirror is converted into positive temperature coefficient voltage by a resistor;
step 2.2, the negative temperature coefficient circuit works, an NMOS tube is connected into a diode form, so that negative temperature coefficient voltage can be obtained, the negative temperature coefficient voltage is placed on the positive temperature coefficient voltage, and voltage with a specific temperature coefficient can be obtained through superposition of a certain proportion;
and 2.3, the subtractor circuit module works, the positive input end and the negative input end of the operational amplifier are positioned at the same potential according to the virtual short principle of the operational amplifier, the input level is converted into the output bias voltage with the required specific temperature coefficient and voltage value through the feedback and the voltage division of the resistor, and the temperature compensation is provided for the amplifier.
In summary, the embodiment of the invention provides an amplifier temperature compensation circuit based on bias voltage modulation, which balances the influence of temperature variation on an amplifier by modulating the bias voltage of the amplifier, can compensate gain differences at different temperatures, can be adjusted according to different circuit requirements, can simplify design difficulty, shorten design time, can reduce the influence of power supply voltage fluctuation on the gain of the amplifier, can be applied as a key module of a radio frequency amplifier, and is suitable for millimeter wave communication amplifying circuit scenes, such as a low noise amplifier and the like.
In addition, the temperature compensation circuit of the amplifier of the embodiment of the invention enlarges the temperature coefficient range and the output voltage range of the customized temperature coefficient voltage through the subtracter circuit module, has wider application range, more accurate output voltage and better temperature compensation performance; when designing the amplifier required by different bias voltage modulation, only the proportional relation of feedback resistance of the subtracter circuit module needs to be changed, the repeatability is high, and the time required by plate changing design is greatly reduced.
While certain exemplary embodiments of the present invention have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that modifications may be made to the described embodiments in various different ways without departing from the spirit and scope of the invention. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive of the scope of the invention, which is defined by the appended claims.
Claims (5)
1. The temperature compensation circuit of the amplifier is characterized by comprising a temperature coefficient circuit module and a subtracter circuit module, wherein the output end of the temperature coefficient circuit module is connected with the input end of the subtracter circuit module, and the output end of the subtracter circuit module is connected with the amplifier to be compensated;
the temperature coefficient circuit module comprises first to eleventh transistors, a first resistor and a second resistor, wherein the first to tenth transistors, the first resistor and the second resistor form a positive temperature coefficient circuit, and the eleventh transistor forms a negative temperature coefficient circuit;
the first transistor is connected with the grid electrode of the second transistor, the source electrode of the first transistor is connected with the power supply, and the grid electrode and the drain electrode of the second transistor are connected;
the source electrode of the third transistor is connected with the drain electrode of the first transistor, the source electrode of the fourth transistor is connected with the drain electrode of the second transistor, and the gate electrode of the fourth transistor is connected with the drain electrode;
the source electrode of the fifth transistor is grounded, the source electrode of the sixth transistor is connected with one end of the first resistor, the other end of the first resistor is grounded, and the gate electrode and the drain electrode of the fifth transistor are connected;
the seventh transistor is connected with the grid electrode of the eighth transistor, the source electrode of the seventh transistor is connected with the drain electrode of the fifth transistor, the source electrode of the eighth transistor is connected with the drain electrode of the sixth transistor, the drain electrode of the seventh transistor is connected with the drain electrode of the third transistor, the drain electrode of the eighth transistor is connected with the drain electrode of the fourth transistor, and the grid electrode and the drain electrode of the seventh transistor are connected;
a grid electrode of the ninth transistor is connected with the grid electrodes of the first transistor and the second transistor, and a source electrode of the ninth transistor is connected with a power supply;
a gate of the tenth transistor is connected to the gates of the third transistor and the fourth transistor, a source of the tenth transistor is connected to a drain of the ninth transistor, a drain of the tenth transistor is connected to one end of the second resistor, and the other end of the second resistor is connected to a drain of the eleventh transistor as an output terminal of the temperature coefficient circuit;
the grid electrode and the drain electrode of the eleventh transistor are connected, and the source electrode of the eleventh transistor is grounded;
the subtracter circuit comprises an operational amplifier and third to sixth resistors, wherein one end of the third resistor is used as an input end of the subtracter circuit module, is connected with an output end of the temperature coefficient circuit, and the other end of the third resistor is connected with one end of the fourth resistor and a positive voltage input end of the operational amplifier; one end of the fifth resistor is connected with a reference voltage, the other end of the fifth resistor is connected with one end of the sixth resistor and the negative voltage input end of the operational amplifier, the other end of the sixth resistor is connected with the output end of the operational amplifier, and the output end of the operational amplifier is used as the output end of the subtracter circuit module and is connected with the amplifier to be compensated.
2. The amplifier temperature compensation circuit of claim 1 wherein the supply voltage of the temperature coefficient circuit is set to direct current 1.8V and the supply voltage of the subtractor circuit is set to direct current 1.8V.
3. The amplifier temperature compensation circuit of claim 1 or 2 wherein the first transistor, the second transistor, the third transistor, and the fourth transistor have a size ratio of 1:1.
4. The amplifier temperature compensation circuit of claim 1 or 2 wherein the ratio of the dimensions of the fifth transistor to the sixth transistor is 1:8.
5. An amplifier temperature compensation circuit according to claim 1 or 2, wherein the amplifier is a field effect transistor amplifier, and the output of the subtractor circuit module is connected to the gate of the field effect transistor amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310696436.8A CN116865694B (en) | 2023-06-13 | 2023-06-13 | Amplifier temperature compensation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310696436.8A CN116865694B (en) | 2023-06-13 | 2023-06-13 | Amplifier temperature compensation circuit |
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| Publication Number | Publication Date |
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| CN116865694A CN116865694A (en) | 2023-10-10 |
| CN116865694B true CN116865694B (en) | 2024-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310696436.8A Active CN116865694B (en) | 2023-06-13 | 2023-06-13 | Amplifier temperature compensation circuit |
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| CN108052152A (en) * | 2017-12-21 | 2018-05-18 | 上海晶丰明源半导体股份有限公司 | Linear temperature coefficient voltage follower circuit |
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| CH697322B1 (en) * | 2000-06-13 | 2008-08-15 | Em Microelectronic Marin Sa | A method of generating a substantially Independent current temperature and device for carrying out this method. |
| JP4475340B2 (en) * | 2008-03-21 | 2010-06-09 | セイコーエプソン株式会社 | Temperature compensation circuit |
| TWI501544B (en) * | 2012-11-30 | 2015-09-21 | Universal Scient Ind Shanghai | Electronic system,rf power amplifier and temperature compensation method thereof |
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| CN108052152A (en) * | 2017-12-21 | 2018-05-18 | 上海晶丰明源半导体股份有限公司 | Linear temperature coefficient voltage follower circuit |
| CN208255752U (en) * | 2018-06-21 | 2018-12-18 | 湘潭大学 | The section linear compensating CMOS band gap reference of Low Drift Temperature high PSRR |
| WO2021179212A1 (en) * | 2020-03-11 | 2021-09-16 | 深圳市汇顶科技股份有限公司 | Temperature sensor, electronic apparatus, and temperature measurement system |
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