CN116865693B - Terahertz light wave amplifier - Google Patents
Terahertz light wave amplifier Download PDFInfo
- Publication number
- CN116865693B CN116865693B CN202310477061.6A CN202310477061A CN116865693B CN 116865693 B CN116865693 B CN 116865693B CN 202310477061 A CN202310477061 A CN 202310477061A CN 116865693 B CN116865693 B CN 116865693B
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- Prior art keywords
- amplifier
- scattering
- terahertz light
- light wave
- end cover
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011248 coating agent Substances 0.000 claims abstract description 35
- 238000000576 coating method Methods 0.000 claims abstract description 35
- 230000005855 radiation Effects 0.000 claims abstract description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 7
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/02—Details
- H05K5/0217—Mechanical details of casings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/02—Details
- H05K5/03—Covers
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N2005/065—Light sources therefor
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N2005/0664—Details
Abstract
The invention discloses a terahertz light wave amplifier, which comprises a first amplifier shell, an end cover and a plurality of amplifying units, wherein the first amplifier shell is provided with a plurality of amplifying units; a waveguide tube mounting hole is formed in one end, far away from the end cover, of the first amplifier shell; the radius of the first amplifier housing increases gradually from the waveguide mounting hole to the end cap; a plurality of amplifying units are uniformly arranged on the side wall of the inner cavity of the first amplifier shell on the end cover; a plurality of scattering chips are arranged on the side walls of the amplifying unit, which are close to and far away from the end cover, and a scattering coating is arranged on the scattering chips; the inner cavity surface of the first amplifier shell is covered with a reflective coating; the radiation end of the waveguide tube in the waveguide tube mounting hole is aligned with any amplifying unit. The invention can enlarge the output range of the terahertz light wave without the need of a user to be far away from the emission source or increasing the power of the terahertz light wave emission source.
Description
Technical Field
The invention belongs to the field of terahertz light wave instruments, and particularly relates to a terahertz light wave amplifier.
Background
The existing terahertz light wave instrument mostly irradiates the fixed position by fixing the terahertz light wave emitting source at one position, when the terahertz light wave instrument is used, a user needs to be located at the fixed position to perform light wave irradiation treatment, the terahertz light wave emitting display is conical, in order to ensure that a large enough irradiation area needs a user to be far enough away from the emitting source, when the user is far away from the emitting source, the received radiation energy of the terahertz light wave is reduced, and at the moment, the power of the emitting source needs to be increased to enable the output energy to meet the use requirement. Namely, the existing terahertz light wave instrument lacks an amplifying device aiming at the output range of the emission source.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to provide a terahertz optical wave amplifier.
The technical scheme adopted by the invention is as follows:
a terahertz light wave amplifier comprises a first amplifier shell, an end cover and a plurality of amplifying units; a waveguide tube mounting hole is formed in one end, far away from the end cover, of the first amplifier shell; the radius of the first amplifier housing increases gradually from the waveguide mounting hole to the end cap; a plurality of amplifying units are uniformly arranged on the side wall of the inner cavity of the first amplifier shell on the end cover; a plurality of scattering chips are arranged on the side walls of the amplifying unit, which are close to and far away from the end cover, and a scattering coating is arranged on the scattering chips; the scattering chip is a circular sheet body, a plurality of arc-shaped sections are arranged on the scattering coating along the radial direction of the scattering chip, and gaps are reserved between adjacent arc-shaped sections in the radial direction of the scattering chip and are connected through straight sections; gaps are reserved between adjacent arc sections on the same circumference of the scattering chip; the inner cavity surface of the first amplifier shell is covered with a reflective coating; the radiation end of the waveguide tube in the waveguide tube mounting hole is aligned with any amplifying unit.
Alternatively, both the reflective coating and the scattering coating are silver-nickel alloy materials.
Alternatively, the alignment of the waveguide within the waveguide mounting hole is to the reflective coating of the first amplifier housing instead of the amplifying cell.
Alternatively, the amplifying unit is a fan, and the amplifying unit can drive the scattering chips at two sides of the amplifying unit to rotate.
Alternatively, the scattering chip is directly disposed on the side wall of the end cap close to the first amplifier housing instead of being mounted on the amplifying unit.
The beneficial effects of the invention are as follows:
the invention provides a terahertz light wave amplifier, which comprises a first amplifier shell, an end cover and a plurality of amplifying units, wherein the first amplifier shell is provided with a plurality of amplifying units; a waveguide tube mounting hole is formed in one end, far away from the end cover, of the first amplifier shell; the radius of the first amplifier housing increases gradually from the waveguide mounting hole to the end cap; a plurality of amplifying units are uniformly arranged on the side wall of the inner cavity of the first amplifier shell on the end cover; a plurality of scattering chips are arranged on the side walls of the amplifying unit, which are close to and far away from the end cover, and a scattering coating is arranged on the scattering chips; the scattering chip is a circular sheet body, a plurality of arc-shaped sections are arranged on the scattering coating along the radial direction of the scattering chip, and gaps are reserved between adjacent arc-shaped sections in the radial direction of the scattering chip and are connected through straight sections; gaps are reserved between adjacent arc sections on the same circumference of the scattering chip; the inner cavity surface of the first amplifier shell is covered with a reflective coating; the radiation end of the waveguide tube in the waveguide tube mounting hole is aligned with any amplifying unit. The terahertz light wave instrument is emitted out of the terahertz light wave instrument at the waveguide tube and is led into the first amplifier shell, meanwhile, as the emitting end of the waveguide tube is aligned with the amplifying unit, the terahertz light wave is directly emitted to the amplifying unit, and then the terahertz light wave is scattered by the scattering coating on the surface of the scattering chip, so that the output range of the output terahertz light wave is larger; meanwhile, the scattering coating can reflect part of the terahertz light waves to the surface of the inner cavity of the first amplifier shell, and the reflection coating of the inner cavity of the first amplifier shell reflects the received terahertz light waves again. The invention can enlarge the output range of the terahertz light wave without the need of a user to be far away from the emission source or increasing the power of the terahertz light wave emission source.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a top view of the present invention.
Fig. 3 is a schematic view showing the internal structure of a first amplifier housing in the first embodiment.
Fig. 4 is a schematic diagram of the internal structure of the first amplifier housing in the second embodiment.
Fig. 5 is a schematic structural diagram of a scattering chip.
Fig. 6 is a schematic view of the mounting position of the first amplifier housing.
Fig. 7 is a schematic structural view of the third embodiment.
Fig. 8 is a schematic diagram of the internal structure of the second amplifier housing.
In the figure: the device comprises a first amplifier shell, a 11-waveguide mounting hole, a 2-end cover, a 3-amplifying unit, a 4-scattering chip, a 5-scattering coating, a 6-second amplifier shell, a 61-scattering window, a 62-power wire reserved hole, a 7-terahertz light wave generating device and a 71-power interface.
Detailed Description
Embodiment one:
in this embodiment, a terahertz optical wave amplifier as shown in fig. 1 to 6 includes a first amplifier housing 1, an end cover 2, and a plurality of amplifying units 3; the end of the first amplifier housing 1, which is far away from the end cover 2, is provided with a waveguide mounting hole 11; the radius of the first amplifier housing 1 gradually increases from the waveguide mounting hole 11 to the end cap 2; the end cover 2 is positioned on the side wall of the inner cavity of the first amplifier shell 1 and is uniformly provided with a plurality of amplifying units 3; a plurality of scattering chips 4 are arranged on the side walls of the amplifying unit 3, which are close to and far from the end cover 2, and a scattering coating 5 is arranged on the scattering chips 4; the inner cavity surface of the first amplifier housing 1 is covered with a reflective coating; the radiation end of the waveguide tube in the waveguide tube mounting hole 11 is aligned with any amplifying unit 3, and the other end of the waveguide tube is connected with a terahertz light wave instrument. The terahertz light wave instrument is emitted by the waveguide tube and is led into the first amplifier shell 1, meanwhile, as the emitting end of the waveguide tube is aligned with the amplifying unit 3, the terahertz light wave is directly emitted to the amplifying unit 3, and then the terahertz light wave is scattered by the scattering coating 5 on the surface of the scattering chip 4, so that the output range of the output terahertz light wave is larger; meanwhile, the scattering coating 5 can reflect part of the terahertz light waves to the surface of the inner cavity of the first amplifier shell 1, and the reflection coating of the inner cavity of the first amplifier shell 1 reflects the received terahertz light waves again, so that energy loss in the scattering process is reduced. The invention can enlarge the output range of the terahertz light wave without increasing the power of the terahertz light wave emission source.
In this embodiment, as shown in fig. 5, the scattering chip 4 is a circular sheet, the scattering coating 5 is provided with a plurality of arc segments along the radial direction of the scattering chip 4, and adjacent arc segments along the radial direction of the scattering chip 4 have gaps and are connected by straight segments; gaps are reserved between adjacent arc-shaped sections on the same circumference of the scattering chip 4; the gaps between the arc segments of the scattering coating 5 provide room for the scattering of terahertz light waves.
In this embodiment, the reflective coating and the scattering coating 5 are both silver-nickel alloy materials.
In this embodiment, the amplifying unit 3 is a fan, and the amplifying unit 3 can drive the scattering chips 4 at two sides of the amplifying unit to rotate, so that the scattering angle of the scattering chips 4 can be larger when the fan rotates.
The invention can also be used as an amplifying device for microwaves or ultrasonic waves.
In this embodiment, the end of the waveguide far away from the waveguide mounting hole 11 may be connected to a microwave generator or an ultrasonic generator, and the silver-nickel alloy reflective coating and the scattering coating 5 can also reflect and scatter microwaves and ultrasonic waves. Namely, the terahertz optical wave amplifier in the present embodiment can be used as a microwave amplifier and an ultrasonic amplifier as well.
Embodiment two:
the difference between this embodiment and the first embodiment is that:
the reflection coating of the waveguide tube in the catheter mounting hole 11 aligned with the first amplifier housing 1, instead of the amplifying unit 3, directly uses the reflection coating of the inner cavity of the first amplifier housing 1 to scatter the terahertz light waves.
Embodiment III:
the difference between this embodiment and the first embodiment is that:
the diffusion chip 4 is directly disposed on the side wall of the end cover 2 close to the first amplifier housing 1 instead of being mounted on the amplifying unit 3, i.e., in this embodiment, the amplifying unit is not disposed inside the first amplifier housing 1, and the diffusion chip 4 is directly adhered to the inner side of the end cover 2.
Embodiment four:
the embodiment provides another alternative for the specific structure of the terahertz optical wave amplifier on the basis of any embodiment.
In this embodiment, as shown in fig. 7 and 8, the terahertz optical wave amplifier in this embodiment includes a second amplifier housing 6, a cavity is formed inside the second amplifier housing 6, a terahertz optical wave generating device 7 is disposed in an inner cavity of the second amplifier housing 6, a plurality of scattering windows 61 are uniformly disposed on a side wall of the second amplifier housing 6, a power line reserved hole 62 is formed on a top wall of the second amplifier housing 6, a power interface 71 is disposed at a top of the terahertz optical wave generating device 7, and terahertz optical waves can be generated after the terahertz optical wave generating device 7 is powered on. The inner wall of the second amplifier housing 6 is made of silver-nickel alloy, and the terahertz light wave emitting port of the terahertz light wave generating device 7 is aligned with the side wall of the inner cavity of the second amplifier housing 6 and staggered with the scattering window 61.
Alternatively, the cross-sectional area of the second amplifier housing 6 is a combined shape of an arc and a line segment, an ellipse, a circle, or a polygon.
In the present embodiment, the cross-sectional area of the second amplifier housing 6 is circular, i.e., the second amplifier housing 6 is a cylindrical housing.
In other embodiments, the second amplifier housing 6 is a square housing.
In other embodiments, the second amplifier housing 6 is an oval housing.
In other embodiments, the second amplifier housing 6 is a semi-cylindrical housing.
When the terahertz light wave generating device 7 is powered on, terahertz light waves are generated, the terahertz light waves are repeatedly ejected on the side wall of the inner cavity of the second amplifier housing 6 made of silver-nickel alloy and then are emitted from the scattering window 61, and the emitting direction of the terahertz light waves is not limited to the emitting angle of the terahertz light wave emitting port of the terahertz light wave generating device 7 any more due to the fact that the terahertz light waves are repeatedly reflected in the inner cavity of the second amplifier housing 6, when the terahertz light waves are finally emitted out of the scattering window 61, the angle is uncertain, and the angles of the terahertz light waves reflected out of the scattering window 61 from the side wall of the inner cavity with different angles are different, so that the terahertz light waves have a larger irradiation range after being emitted out of the scattering window 61.
The terahertz light wave generating device 7 in this embodiment and the terahertz light wave meter in the first embodiment may be replaced with each other.
The second amplifier housing 6 in the present invention can also be used as an amplifying device for microwaves or ultrasound.
In this embodiment, the second amplifier housing 6 may be provided with a microwave generator or an ultrasonic generator instead of the terahertz light wave generating device 7, and the inner wall of the second amplifier housing 6 made of silver-nickel alloy can also reflect and scatter microwaves and ultrasonic waves.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (5)
1. A terahertz light wave amplifier is characterized in that: comprises a first amplifier shell (1), an end cover (2) and a plurality of amplifying units (3);
the end, far away from the end cover (2), of the first amplifier shell (1) is provided with a waveguide tube mounting hole (11);
the radius of the first amplifier shell (1) gradually increases from the waveguide mounting hole (11) to the end cover (2);
the end cover (2) is positioned on the side wall of the inner cavity of the first amplifier shell (1) and is uniformly provided with a plurality of amplifying units (3);
a plurality of scattering chips (4) are arranged on the side walls of the amplifying unit (3) close to and far from the end cover (2), and a scattering coating (5) is arranged on the scattering chips (4);
the scattering chip (4) is a circular sheet body, the scattering coating (5) is provided with a plurality of arc-shaped sections along the radial direction of the scattering chip (4), and gaps are reserved between adjacent arc-shaped sections in the radial direction of the scattering chip (4) and are connected through straight sections; gaps are reserved between adjacent arc-shaped sections on the same circumference of the scattering chip (4);
the inner cavity surface of the first amplifier shell (1) is covered with a reflective coating;
the radiation end of the waveguide tube in the waveguide tube mounting hole (11) is aligned with any amplifying unit (3), and the other end of the waveguide tube is connected with a terahertz light wave instrument.
2. A terahertz light wave amplifier according to claim 1, characterized in that the reflective coating and the scattering coating (5) are both silver-nickel alloy materials.
3. The terahertz light wave amplifier according to claim 1, wherein the amplifying unit (3) is a fan, and the amplifying unit (3) can drive the scattering chips (4) at two sides of the amplifying unit to rotate.
4. A terahertz light wave amplifier according to claim 1, characterized in that the scattering chip (4) is arranged directly on the side wall of the end cap (2) close to the first amplifier housing (1) instead of being mounted on the amplifying unit (3).
5. A terahertz light wave amplifier is characterized in that: comprises a first amplifier housing (1) and an end cap (2);
the end, far away from the end cover (2), of the first amplifier shell (1) is provided with a waveguide tube mounting hole (11);
the radius of the first amplifier shell (1) gradually increases from the waveguide mounting hole (11) to the end cover (2);
the inner cavity surface of the first amplifier shell (1) is covered with a reflective coating;
the waveguide in the waveguide mounting hole (11) is aligned with the reflective coating of the first amplifier housing (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310477061.6A CN116865693B (en) | 2023-04-27 | 2023-04-27 | Terahertz light wave amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310477061.6A CN116865693B (en) | 2023-04-27 | 2023-04-27 | Terahertz light wave amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116865693A CN116865693A (en) | 2023-10-10 |
| CN116865693B true CN116865693B (en) | 2024-02-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310477061.6A Active CN116865693B (en) | 2023-04-27 | 2023-04-27 | Terahertz light wave amplifier |
Country Status (1)
| Country | Link |
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| CN (1) | CN116865693B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101036076A (en) * | 2004-10-06 | 2007-09-12 | 康宁股份有限公司 | Transverse closed-loop resonator |
| US10753651B1 (en) * | 2017-10-16 | 2020-08-25 | Scott Shepard | Solar over fiber and water based waveguides |
| CN111665212A (en) * | 2020-06-12 | 2020-09-15 | 常州海石智能装备有限公司 | Terahertz wave detection device |
| CN113952627A (en) * | 2021-11-24 | 2022-01-21 | 广州中氢能源科技有限公司 | Radiation core for multifunctional integrated physiotherapy equipment |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10352590A1 (en) * | 2002-11-12 | 2004-05-27 | Toptica Photonics Ag | Method for manufacturing optical fibre with output point for stray light and measuring fibre optical power, with optical fibre contiguous core , and surrounding sleeve with second lower refraction index, while fibre section |
| US7691544B2 (en) * | 2006-07-21 | 2010-04-06 | Intel Corporation | Measurement of a scattered light point spread function (PSF) for microelectronic photolithography |
| US10330610B2 (en) * | 2015-09-16 | 2019-06-25 | Massachusetts Institute Of Technology | Methods and apparatus for imaging of near-field objects with microwave or terahertz radiation |
-
2023
- 2023-04-27 CN CN202310477061.6A patent/CN116865693B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101036076A (en) * | 2004-10-06 | 2007-09-12 | 康宁股份有限公司 | Transverse closed-loop resonator |
| US10753651B1 (en) * | 2017-10-16 | 2020-08-25 | Scott Shepard | Solar over fiber and water based waveguides |
| CN111665212A (en) * | 2020-06-12 | 2020-09-15 | 常州海石智能装备有限公司 | Terahertz wave detection device |
| CN113952627A (en) * | 2021-11-24 | 2022-01-21 | 广州中氢能源科技有限公司 | Radiation core for multifunctional integrated physiotherapy equipment |
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| CN116865693A (en) | 2023-10-10 |
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