CN116863975A - Method and device for stabilizing data read from memory - Google Patents
Method and device for stabilizing data read from memory Download PDFInfo
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- CN116863975A CN116863975A CN202210310434.6A CN202210310434A CN116863975A CN 116863975 A CN116863975 A CN 116863975A CN 202210310434 A CN202210310434 A CN 202210310434A CN 116863975 A CN116863975 A CN 116863975A
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- 230000015654 memory Effects 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims description 36
- 230000000087 stabilizing effect Effects 0.000 title claims description 20
- 238000009966 trimming Methods 0.000 claims abstract description 223
- 230000001105 regulatory effect Effects 0.000 claims abstract description 7
- 230000001276 controlling effect Effects 0.000 claims description 14
- 238000003491 array Methods 0.000 claims description 12
- 230000006641 stabilisation Effects 0.000 claims description 8
- 238000011105 stabilization Methods 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
After a reference trimming module is determined, the equivalent resistance value of the reference trimming module is adjusted to be the optimal resistance value obtained in advance, then the second output end of a sensitive amplifier connected with the reference trimming module is connected with a to-be-trimmed module, and the to-be-trimmed module is adjusted according to an output signal regulated by the sensitive amplifier, so that the total resistance value of each reference circuit and the total resistance value of each reference circuit after the first trimming module connected with each reference circuit in series are equal, the size of a reading window is increased, the stability of read data is improved, and the multiplexing of the sensitive amplifier in the memory is realized.
Description
Technical Field
The application relates to the field of memories, in particular to a method and a device for stabilizing read data of a memory.
Background
In some memories, a plurality of sense amplifiers, reference circuits, and arrays, such as MRAM (Magnetoresistive Random Access Memory, magnetic random access memory), are typically included to enable parallel output of data. The two input ends of each sense amplifier are respectively connected with a reference circuit and an array. In reading data stored in the array, the array bits in the memory read the data stored in the array in the memory through sense amplifiers in the memory. To stably read the data stored in the array, it is required that the equivalent resistance value of each reference circuit is within a specific interval, which is called a read window, and the larger the read window is, the better the read stability is when reading the data in the array is, and the lower the probability of reading the wrong data is. The size of the reading window is related to the difference value of the equivalent resistance values of the reference circuits, and the reading window is maximum when the equivalent resistance values of the reference circuits are equal. And because certain deviation exists in the manufacturing of devices such as MOS (metal oxide semiconductor) tubes and resistors in the reference circuits, even if the same type of MOS tubes and the same nominal value of resistors are adopted, certain deviation exists in the equivalent resistance values of the reference circuits, so that the size of a reading window is reduced, and the stability of the read data is reduced.
Disclosure of Invention
The application aims to provide a method and a device for stabilizing read data of a memory, which increase the size of a read window, improve the stability of the read data and realize multiplexing of a sense amplifier in the memory.
In order to solve the technical problems, the application provides a method for stabilizing data read from a memory, which is applied to the memory, wherein the memory comprises N sensitive amplifiers, N reference circuits, N first trimming modules, N arrays and a MUX circuit, N is an integer not less than 2, and the method for stabilizing the data read from the memory comprises the following steps:
when a control instruction is received, determining any one of the first trimming modules as a reference trimming module, adjusting the equivalent resistance value of the reference trimming module as an optimal resistance value, and controlling the MUX circuit to connect the first input end of the sensitive amplifier corresponding to the reference trimming module, the reference trimming module and a reference circuit corresponding to the reference trimming module in series and then to be grounded;
determining any one of other first trimming modules which are not adjusted as a trimming module to be adjusted, controlling the MUX circuit to connect the second input end of the sensitive amplifier corresponding to the reference trimming module, the trimming module to be adjusted and a reference circuit corresponding to the trimming module to be adjusted in series and then to be grounded;
adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sense amplifier so that the equivalent resistance value of the to-be-adjusted adjustment module and the reference circuit corresponding to the to-be-adjusted adjustment module after being connected in series is equal to the equivalent resistance value of the reference adjustment module and the reference circuit corresponding to the reference adjustment module after being connected in series;
and judging whether the equivalent resistance values of all the first trimming modules and the reference circuits corresponding to the first trimming modules are equal to the equivalent resistance values of the reference trimming modules and the reference circuits corresponding to the reference trimming modules after being connected in series, and if the equivalent resistance values of the first trimming modules and the reference circuits corresponding to the reference trimming modules are not equal to each other, returning to the step of determining any one of the other first trimming modules which are not adjusted as the to-be-adjusted trimming module.
Preferably, adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sense amplifier includes:
determining an initial output signal of the sense amplifier;
and adjusting the equivalent resistance value of the to-be-adjusted adjustment module until the initial output signal of the sense amplifier changes.
Preferably, the memory further includes N second trimming modules and N resistors, two input ends of the sense amplifier are respectively connected with one end of the second trimming module corresponding to the sense amplifier and one end of the resistor corresponding to the sense amplifier, the resistor and the other end of the second trimming module are both connected with the MUX circuit, and before determining that any one of the first trimming modules is the reference trimming module when receiving the control instruction, the memory further includes:
determining any one of the second trimming modules which are not adjusted as a trimming module to be adjusted;
the MUX circuit is controlled to make the potentials at two ends of the sensitive amplifier corresponding to the to-be-regulated module equal;
adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sensitive amplifier corresponding to the to-be-adjusted adjustment module so that the equivalent resistance value of the to-be-adjusted adjustment module is equal to the resistance value of the resistor correspondingly connected with the sensitive amplifier corresponding to the to-be-adjusted adjustment module;
and judging whether the equivalent resistance values of all the second trimming modules are equal to the resistance values of the resistors correspondingly connected with the sensitive amplifiers corresponding to the second trimming modules, if the equivalent resistance values are not equal to the resistance values of the resistors correspondingly connected with the sensitive amplifiers corresponding to the second trimming modules, returning to the step of determining any one of the second trimming modules which are not adjusted as a module to be trimmed, and if the equivalent resistance values are equal to the resistance values, entering the step of determining any one of the first trimming modules as a reference trimming module when a control instruction is received.
Preferably, the first trimming module includes a plurality of resistors and controllable switches, a plurality of resistors are connected in series, and then connected in series with a first input end of a sensitive amplifier connected with the to-be-trimmed module and a reference circuit corresponding to the to-be-trimmed module, and each resistor is connected in parallel with a controllable switch at two ends, so as to adjust an equivalent resistance value of the to-be-trimmed module, and the method includes:
the number of resistors connected to the circuit is controlled by controlling the on-off of the controllable switch.
Preferably, the resistance is an MTJ or a poly resistance.
Preferably, the first trimming module includes a plurality of MOS tubes connected in parallel, adjusts the equivalent resistance value of the to-be-trimmed module, and includes:
and adjusting the equivalent resistance value of the to-be-adjusted trimming module by controlling the number of MOS (metal oxide semiconductor) tubes connected to the circuit.
Preferably, the sense amplifier is a current comparator or a voltage comparator.
Preferably, determining any one of the other first trimming modules that is not adjusted as the trimming module to be adjusted includes:
determining an unadjusted first trimming module closest to the reference trimming module as the to-be-trimmed module;
and adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sense amplifier, and then further comprising:
and taking the to-be-adjusted adjustment module as a new reference adjustment module.
The application also provides a memory read data stabilizing device, which comprises a control module, N sense amplifiers, N reference circuits, N first trimming modules, N arrays and a MUX circuit;
the input ends of the sense amplifiers are connected with the MUX circuit, and the output ends of the sense amplifiers are connected with the control module;
the reference circuits are connected with the MUX circuits after being connected in series with the first trimming modules corresponding to the reference circuits;
the arrays are all connected with the MUX circuit;
the control module is also connected with N sensitive amplifiers and N first trimming modules;
the control module is used for executing the memory read data stabilization method.
Preferably, the control module is a BIST module.
After a reference trimming module is determined, the equivalent resistance value of the reference trimming module is adjusted to be the optimal resistance value obtained in advance, then the second output end of a sensitive amplifier connected with the reference trimming module is connected with a to-be-trimmed module, and the to-be-trimmed module is adjusted according to an output signal regulated by the sensitive amplifier, so that the total resistance values of each reference circuit and a first trimming module connected with each reference circuit in series are equal, the size of a reading window is increased, the stability of read data is improved, and multiplexing of the sensitive amplifier in the memory is realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required in the prior art and the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for stabilizing memory read data provided by the application;
FIG. 2 is a schematic diagram of a memory read data stabilization device according to the present application;
fig. 3 is a schematic structural diagram of another memory read data stabilizing device provided by the present application.
Detailed Description
The core of the application is to provide a method and a device for stabilizing read data of a memory, which increase the size of a read window, improve the stability of the read data and realize multiplexing of a sense amplifier in the memory.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1 in particular, fig. 1 is a flowchart of a method for stabilizing data in a memory according to the present application.
The method for stabilizing the data of the memory read data is applied to the memory, the memory comprises N sensitive amplifiers, N reference circuits, N first trimming modules, N arrays and a MUX (multiple switching) circuit, wherein the input ends of the sensitive amplifiers are connected with the MUX circuit, the reference circuits are connected with the MUX circuit after being connected in series with the first trimming modules corresponding to the reference circuits, the arrays are connected with the MUX circuit, and N is an integer not less than 2, and the method for stabilizing the data of the memory read data comprises the following steps:
s1: when a control instruction is received, determining any first trimming module as a reference trimming module, adjusting the equivalent resistance value of the reference trimming module as an optimal resistance value, and controlling the MUX circuit to connect the first input end of the sensitive amplifier corresponding to the reference trimming module, the reference trimming module and a reference circuit corresponding to the reference trimming module in series and then to be grounded, wherein the optimal resistance value is the resistance value of the first trimming module which is predetermined by reading and writing the array and enables the reading stability to be the best;
since the accuracy of reading data in an array is related to the equivalent resistance value of a reference circuit connected to one input of a sense amplifier. By performing read-write operation on the array in advance, the equivalent resistance value corresponding to the reference circuit with the best stability when reading the data in the array can be obtained according to the stability when reading the data. In the prior art, the equivalent resistance values of all the reference circuits are set as the optimal resistance values directly during production, but the equivalent resistance values of all the reference circuits have deviation due to the deviation of manufacturing processes of devices such as MOS transistors, resistors and the like in the reference circuits. In this embodiment, first trimming modules corresponding to the N reference circuits one by one are additionally provided, and the total equivalent resistance value of the reference circuit and the first trimming modules corresponding to the reference circuit after being connected in series is changed by adjusting the resistance value of the first trimming modules connected in series with the reference circuit. In this embodiment, any one of the N first trimming modules is determined as a reference trimming module, and then an equivalent resistance value of the reference trimming module is adjusted to be an optimal resistance value, so that a total equivalent resistance value after the reference trimming module and a reference circuit corresponding to the reference trimming module are connected in series is an equivalent resistance value with the best stability when data in the array is read. And the other first trimming modules are adjusted by taking the reference trimming module as a reference, so that the total equivalent resistance value after the other first trimming modules and the reference circuits corresponding to the other first trimming modules are connected in series is the equivalent resistance value with the best stability when the data in the array is read.
Further, the memory herein may be, but is not limited to, MRAM.
S2: determining any one of other first trimming modules which are not adjusted as a to-be-adjusted trimming module, and controlling the MUX circuit to connect the second input end of the sensitive amplifier corresponding to the reference trimming module, the to-be-adjusted trimming module and a reference circuit corresponding to the to-be-adjusted trimming module in series and then to be grounded;
in order to adjust the other first trimming modules according to the reference trimming module so that the total equivalent resistance value after the other first trimming modules are connected in series with the reference circuits corresponding to the other first trimming modules is equal to the total equivalent resistance value after the reference trimming module is connected in series with the reference circuits corresponding to the reference trimming modules, in this embodiment, the other first trimming modules which are not adjusted are determined as the trimming modules to be adjusted. The other first trimming modules which are not adjusted refer to the first trimming modules which are not adjusted to the optimal resistance value in the equivalent resistance values except the reference trimming module. After the to-be-adjusted adjustment module is determined, the MUX circuit is controlled to connect the second input end of the sensitive amplifier corresponding to the reference adjustment module, the to-be-adjusted adjustment module and the reference circuit corresponding to the to-be-adjusted adjustment module in series and then to be grounded, so that the to-be-adjusted adjustment module and the reference adjustment module are respectively connected with the two ends of the sensitive amplifier corresponding to the reference adjustment module.
S3: adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sense amplifier so that the equivalent resistance value of the to-be-adjusted adjustment module and the reference circuit corresponding to the to-be-adjusted adjustment module after being connected in series is equal to the equivalent resistance value of the reference adjustment module and the reference circuit corresponding to the reference adjustment module after being connected in series;
in this embodiment, by using a self-contained sense amplifier in the memory as a comparator, one input end of the sense amplifier is connected to the reference trimming module and a reference circuit corresponding to the reference trimming module, and the other input end is connected to the to-be-trimmed module and a reference circuit corresponding to the to-be-trimmed module, and the equivalent resistance value of the to-be-trimmed module is adjusted according to the output signal of the sense amplifier. For example, before the adjustment of the adjustment module to be adjusted, the output signal of the sense amplifier is 0, when the resistance value of the adjustment module to be adjusted is adjusted so that the output signal of the sense amplifier just becomes 1, the total equivalent resistance value of the reference adjustment module and the reference circuit corresponding to the reference adjustment module after being connected in series is considered to be equal to the total equivalent resistance value of the adjustment module to be adjusted and the reference circuit corresponding to the adjustment module to be adjusted after being connected in series.
S4: and judging whether the equivalent resistance values of all the first trimming modules and the reference circuits corresponding to the first trimming modules are equal to the equivalent resistance values of the reference trimming modules and the reference circuits corresponding to the reference trimming modules after being connected in series, and if the equivalent resistance values of all the first trimming modules and the reference circuits corresponding to the reference trimming modules are not equal to the equivalent resistance values of the reference trimming modules after being connected in series, returning to the step of determining any one of the other first trimming modules which are not adjusted as the to-be-adjusted trimming module.
After the adjustment of the adjustment module to be adjusted is completed, it is further required to determine whether the equivalent resistance values of all the first adjustment modules and the reference circuits corresponding to the first adjustment modules after being connected in series are equal to the equivalent resistance values of the reference adjustment modules and the reference circuits corresponding to the reference adjustment modules after being connected in series, that is, whether the adjustment of all the first adjustment modules is completed, so that the total equivalent resistance values of all the first adjustment modules and the reference circuits corresponding to the first adjustment modules after being connected in series are equal. If the judgment result is that the equivalent resistance value of the first trimming modules and the reference circuits corresponding to the first trimming modules are equal to the equivalent resistance value of the reference trimming modules and the reference circuits corresponding to the reference trimming modules, the first trimming modules are adjusted completely, and the test is finished, and if the judgment result is that the equivalent resistance value of the first trimming modules and the reference circuits corresponding to the first trimming modules are not equal to the equivalent resistance value of the reference trimming modules and the reference circuits corresponding to the reference trimming modules, the first trimming modules are not adjusted, and therefore the step of determining any one of the other first trimming modules which are not adjusted as the trimming module to be adjusted needs to be returned, so that the adjustment of all the first trimming modules is completed.
In summary, in this embodiment, after the reference trimming module is determined, the equivalent resistance value of the reference trimming module is adjusted to the optimal resistance value obtained in advance, then the second output end of the sense amplifier connected with the reference trimming module is connected with the to-be-trimmed module, and the to-be-trimmed module is adjusted according to the output signal adjusted by the sense amplifier, so that the total resistance values of each reference circuit and the first trimming module connected in series with each reference circuit are equal, the size of the read window is increased, the stability of the read data is improved, and multiplexing of the sense amplifier in the memory is realized.
Based on the above embodiments:
as a preferred embodiment, adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sense amplifier includes:
determining an initial output signal of the sense amplifier;
and adjusting the equivalent resistance value of the to-be-adjusted adjustment module until the initial output signal of the sense amplifier changes.
Since the output signal of the sense amplifier changes when the equivalent resistance values of the two input ends of the sense amplifier become equal from unequal, in this embodiment, at the time when the output signal of the sense amplifier changes, it is determined that the total equivalent resistance value after the reference trimming module and the reference circuit corresponding to the reference trimming module are connected in series is just equal to the total equivalent resistance value after the reference trimming module and the reference circuit corresponding to the reference trimming module are connected in series.
Specifically, an initial output signal of the sense amplifier is first determined, for example, the initial output signal is 0 or 1, so that a change in the output signal of the sense amplifier is judged from the initial output signal. And then adjusting the equivalent resistance value of the to-be-adjusted adjustment module until the output signal of the sense amplifier changes, for example, when the initial output signal of the sense amplifier is 0, and adjusting the equivalent resistance value of the to-be-adjusted adjustment module until the output signal of the sense amplifier becomes 1. The adjustment of the equivalent resistance value of the to-be-adjusted trimming module is simply and accurately realized through the mode.
Referring to fig. 3 in detail, fig. 3 is a schematic structural diagram of another memory read data stabilizing device according to the present application.
As a preferred embodiment, the memory further includes N second trimming modules 31 and N resistors 32, two input ends of the sense amplifier 21 are respectively connected to one end of the second trimming module 31 corresponding to itself and one end of the resistor 32 corresponding to itself, and the other ends of the resistor 32 and the second trimming module 31 are both connected to the MUX circuit 25, and before determining that any one of the first trimming modules 23 is the reference trimming module when receiving the control command, the memory further includes:
determining any one of the second trimming modules 31 which is not adjusted as a trimming module to be adjusted;
the potential at two ends of the sense amplifier 21 corresponding to the to-be-adjusted adjustment module is equal by controlling the MUX circuit 25;
adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sensitive amplifier 21 corresponding to the to-be-adjusted adjustment module so that the equivalent resistance value of the to-be-adjusted adjustment module is equal to the resistance value of the resistor 32 correspondingly connected with the sensitive amplifier 21 corresponding to the to-be-adjusted adjustment module;
judging whether the equivalent resistance values of all the second trimming modules 31 are equal to the resistance values of the resistors 32 correspondingly connected to the sensitive amplifiers 21 corresponding to the second trimming modules 31, if not, returning to the step of determining any one of the second trimming modules 31 which are not adjusted as a module to be trimmed, and if so, entering the step of determining any one of the first trimming modules 23 as a reference trimming module when receiving a control instruction.
Considering that the comparison effect of the sense amplifier 21 is affected due to process deviation between the MOS transistors of the sense amplifier 21, when the output signal of the sense amplifier 21 just changes, the total equivalent resistance value of the reference trimming module and the reference circuit 22 corresponding to the reference trimming module after being connected in series cannot be just equal to the total equivalent resistance value of the module to be trimmed and the reference circuit 22 corresponding to the module to be trimmed after being connected in series. In order to solve the above technical problem, in this embodiment, N second trimming modules 31 and N resistors 32 are further provided in the memory, and by adjusting the equivalent resistance values of the second trimming modules 31 corresponding to each sense amplifier 21, the resistance values of the second trimming modules 31 and the resistors 32 connected to the two input ends of each sense amplifier 21 are respectively equal, so that no matter which first trimming module 23 is used as a reference trimming module, errors brought by the sense amplifiers 21 corresponding to the reference trimming module will not affect the comparison effect, and the comparison precision of the sense amplifiers 21 is improved, so that the result adjusted by each first trimming module 23 is more accurate.
As a preferred embodiment, the first trimming module 23 includes a plurality of resistors and controllable switches, the plurality of resistors are connected in series, and then connected in series with a first input terminal of the sense amplifier 21 connected with the to-be-trimmed module and a reference circuit 22 corresponding to the to-be-trimmed module, and each resistor is connected in parallel with the controllable switches at two ends, so as to adjust an equivalent resistance value of the to-be-trimmed module, and the method includes:
the number of resistors connected to the circuit is controlled by controlling the on-off of the controllable switch.
In order to facilitate the adjustment of the equivalent resistance value of the first trimming module 23, in this embodiment, each first trimming module 23 includes a plurality of resistors and controllable switches, and controllable switches are connected in parallel to two ends of each resistor. When the controllable open ends at the two ends of the resistor receive the control command and are in a closed state, the resistor connected in parallel with the closed controllable switch is in a short circuit state and is not connected into the circuit, and when the controllable open ends at the two ends of the resistor receive the control command and are in an open state, the resistor connected in parallel with the open controllable switch is connected into the circuit. The equivalent resistance of the first trimming module 23 is therefore equal to the total resistance after series connection of the resistors in parallel with all the controllable switches that are disconnected. The adjustment of the equivalent resistance value of the first trimming module 23 is realized by controlling each controllable switch, and the realization mode is simple.
It should be further noted that the controllable switch herein may be, but not limited to, a MOS transistor.
As a preferred embodiment, the resistance is MTJ (Magnetic Tunnel Junctions, magnetic tunnel junction) or poly resistance.
MTJ generally consist of a three-layer base cell of a ferromagnetic layer, an insulating tunneling layer, and a pinned layer. When the magnetic moments of the ferromagnetic layer and the pinned layer are opposite, the memory exhibits a high resistance state, and when the magnetic moments of the ferromagnetic layer and the pinned layer are the same, the memory exhibits a low resistance state. The MTJ has the advantages of high resistivity, low energy consumption and stable performance. The ploy resistor also has the advantages of small resistance deviation, controllable temperature coefficient and the like.
As a preferred embodiment, the first trimming module 23 includes a plurality of MOS transistors connected in parallel, and adjusts an equivalent resistance value of the trimming module to be trimmed, including:
and the equivalent resistance value of the to-be-regulated regulating module is regulated by controlling the number of MOS (metal oxide semiconductor) tubes connected to the circuit.
In order to facilitate the adjustment of the equivalent resistance value of the first trimming module 23, in this embodiment, each first trimming module 23 includes a plurality of MOS transistors connected in parallel, so that the adjustment of the equivalent resistance value of the first trimming module 23 is realized and the circuit design is simple.
As a preferred embodiment, the sense amplifier 21 is a current comparator or a voltage comparator.
In this embodiment, when the sense amplifier 21 is a current comparator or a voltage comparator, the total resistance of each reference circuit 22 and the first trimming module 23 connected in series with each reference circuit 22 are compared by comparing the current nodes between each reference circuit 22, and when the sense amplifier 21 is a voltage comparator, the total resistance of each reference circuit 22 and the first trimming module 23 connected in series with each reference circuit 22 are compared by comparing the voltage nodes between each reference circuit 22, so that different requirements of users under different circuit structures and different application scenarios can be satisfied.
As a preferred embodiment, determining any one of the other first trimming modules 23 that is not adjusted as the trimming module to be adjusted includes:
determining an unadjusted first trimming module 23 closest to the reference trimming module as a trimming module to be trimmed;
the adjusting module adjusts the equivalent resistance value according to the output signal of the sense amplifier 21, and then further comprises:
and taking the to-be-adjusted adjustment module as a new reference adjustment module.
Considering that when the number of the arrays 24 is large, the number of the first trimming modules 23 needs to be compared with the reference trimming modules after the reference trimming modules are determined, and when the distance between the to-be-trimmed modules and the reference trimming modules is long, the excessive line resistance of the overlong circuit is brought, so that the comparison result of the sense amplifier 21 is affected. In order to solve the above-mentioned problem, in the present embodiment, the first trimming module 23 which is closest to the reference trimming module and is not adjusted is determined as the trimming module to be adjusted, after adjusting the equivalent resistance value of the trimming module to be adjusted according to the output signal of the sense amplifier 21, the trimming module to be adjusted is re-used as the new reference trimming module, and then the first trimming module 23 which is closest to the new reference trimming module and is not adjusted is determined as the trimming module to be adjusted. The first trimming modules 23 are adjusted in this way, so that each trimming module to be trimmed compared with the reference trimming module is nearest to the reference trimming module, the influence of the line resistance on the comparison result of the sense amplifier 21 can be reduced to the greatest extent, the calibration result is more accurate, and the reading stability is improved.
Referring to fig. 2 specifically, fig. 2 is a schematic structural diagram of a memory read data stabilizing device according to the present application.
The application also provides a memory read data stabilizing device, which comprises a control module 26, N sense amplifiers 21, N reference circuits 22, N first trimming modules 23, N arrays 24 and a MUX circuit 25;
the input end of the sense amplifier 21 is connected with the MUX circuit 25, and the output end is connected with the control module 26;
the reference circuits 22 are connected with the first trimming modules 23 corresponding to the reference circuits 22 in series and then connected with the MUX circuits 25;
the arrays 24 are all connected with a MUX circuit 25;
the control module 26 is also connected with the N sense amplifiers 21 and the N first trimming modules 23;
the control module 26 is configured to perform the memory read data stabilization method described above.
As a preferred embodiment, the control module 26 is a BIST module.
For a related description of the memory read data stabilization device, please refer to the above embodiment, and the disclosure is not repeated here.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It should also be noted that in this specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method for stabilizing data read from a memory, the memory comprising N sense amplifiers, N reference circuits, N first trimming modules, N arrays and MUX circuits, N being an integer not less than 2, the method comprising:
when a control instruction is received, determining any one of the first trimming modules as a reference trimming module, adjusting the equivalent resistance value of the reference trimming module as an optimal resistance value, and controlling the MUX circuit to connect the first input end of the sensitive amplifier corresponding to the reference trimming module, the reference trimming module and a reference circuit corresponding to the reference trimming module in series and then to be grounded;
determining any one of other first trimming modules which are not adjusted as a trimming module to be adjusted, controlling the MUX circuit to connect the second input end of the sensitive amplifier corresponding to the reference trimming module, the trimming module to be adjusted and a reference circuit corresponding to the trimming module to be adjusted in series and then to be grounded;
adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sense amplifier so that the equivalent resistance value of the to-be-adjusted adjustment module and the reference circuit corresponding to the to-be-adjusted adjustment module after being connected in series is equal to the equivalent resistance value of the reference adjustment module and the reference circuit corresponding to the reference adjustment module after being connected in series;
and judging whether the equivalent resistance values of all the first trimming modules and the reference circuits corresponding to the first trimming modules are equal to the equivalent resistance values of the reference trimming modules and the reference circuits corresponding to the reference trimming modules after being connected in series, and if the equivalent resistance values of the first trimming modules and the reference circuits corresponding to the reference trimming modules are not equal to each other, returning to the step of determining any one of the other first trimming modules which are not adjusted as the to-be-adjusted trimming module.
2. The method of claim 1, wherein adjusting the equivalent resistance value of the to-be-trimmed module according to the output signal of the sense amplifier comprises:
determining an initial output signal of the sense amplifier;
and adjusting the equivalent resistance value of the to-be-adjusted adjustment module until the initial output signal of the sense amplifier changes.
3. The method for stabilizing data read from a memory according to claim 1, wherein the memory further comprises N second trimming modules and N resistors, two input ends of the sense amplifier are respectively connected with one end of each second trimming module corresponding to the sense amplifier and one end of each resistor corresponding to the sense amplifier, the resistor and the other end of each second trimming module are respectively connected with the MUX circuit, and before determining that any one of the first trimming modules is a reference trimming module when receiving a control command, the method further comprises:
determining any one of the second trimming modules which are not adjusted as a trimming module to be adjusted;
the MUX circuit is controlled to make the potentials at two ends of the sensitive amplifier corresponding to the to-be-regulated module equal;
adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sensitive amplifier corresponding to the to-be-adjusted adjustment module so that the equivalent resistance value of the to-be-adjusted adjustment module is equal to the resistance value of the resistor correspondingly connected with the sensitive amplifier corresponding to the to-be-adjusted adjustment module;
and judging whether the equivalent resistance values of all the second trimming modules are equal to the resistance values of the resistors correspondingly connected with the sensitive amplifiers corresponding to the second trimming modules, if the equivalent resistance values are not equal to the resistance values of the resistors correspondingly connected with the sensitive amplifiers corresponding to the second trimming modules, returning to the step of determining any one of the second trimming modules which are not adjusted as a module to be trimmed, and if the equivalent resistance values are equal to the resistance values, entering the step of determining any one of the first trimming modules as a reference trimming module when a control instruction is received.
4. The method for stabilizing data in memory according to claim 1, wherein the first trimming module includes a plurality of resistors and controllable switches, the plurality of resistors are connected in series, and then connected in series with a first input terminal of a sense amplifier connected to the to-be-trimmed module and a reference circuit corresponding to the to-be-trimmed module, and each resistor is connected in parallel with a controllable switch at two ends, so as to adjust an equivalent resistance value of the to-be-trimmed module, and the method includes:
the number of resistors connected to the circuit is controlled by controlling the on-off of the controllable switch.
5. The memory read data stabilization method of claim 4, wherein the resistance is an MTJ or a poly resistance.
6. The method for stabilizing data in memory according to claim 1, wherein the first trimming module includes a plurality of MOS transistors connected in parallel, and adjusting the equivalent resistance value of the trimming module includes:
and adjusting the equivalent resistance value of the to-be-adjusted trimming module by controlling the number of MOS (metal oxide semiconductor) tubes connected to the circuit.
7. The method of claim 1, wherein the sense amplifier is a current comparator or a voltage comparator.
8. The memory read data stabilization method of any one of claims 1 to 7, wherein determining any one of the other first trimming modules that is not adjusted as the trimming module to be adjusted comprises:
determining an unadjusted first trimming module closest to the reference trimming module as the to-be-trimmed module;
and adjusting the equivalent resistance value of the to-be-adjusted adjustment module according to the output signal of the sense amplifier, and then further comprising:
and taking the to-be-adjusted adjustment module as a new reference adjustment module.
9. The device is characterized by comprising a control module, N sense amplifiers, N reference circuits, N first trimming modules, N arrays and a MUX circuit;
the input ends of the sense amplifiers are connected with the MUX circuit, and the output ends of the sense amplifiers are connected with the control module;
the reference circuits are connected with the MUX circuits after being connected in series with the first trimming modules corresponding to the reference circuits;
the arrays are all connected with the MUX circuit;
the control module is also connected with N sensitive amplifiers and N first trimming modules;
the control module is configured to perform the memory read data stabilization method of any one of claims 1 to 8.
10. The memory read data stabilization device of claim 9, wherein the control module is a BIST module.
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| CN202210310434.6A CN116863975A (en) | 2022-03-28 | 2022-03-28 | Method and device for stabilizing data read from memory |
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| CN202210310434.6A CN116863975A (en) | 2022-03-28 | 2022-03-28 | Method and device for stabilizing data read from memory |
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