CN116859629A - Liquid crystal panel dry etching machine process chamber production method and storage medium - Google Patents
Liquid crystal panel dry etching machine process chamber production method and storage medium Download PDFInfo
- Publication number
- CN116859629A CN116859629A CN202310637217.2A CN202310637217A CN116859629A CN 116859629 A CN116859629 A CN 116859629A CN 202310637217 A CN202310637217 A CN 202310637217A CN 116859629 A CN116859629 A CN 116859629A
- Authority
- CN
- China
- Prior art keywords
- formula
- produced
- dry etching
- process chambers
- taking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 238000001312 dry etching Methods 0.000 title claims abstract description 28
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 13
- 238000004590 computer program Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 101001095231 Homo sapiens Peptidyl-prolyl cis-trans isomerase D Proteins 0.000 description 3
- 102100037827 Peptidyl-prolyl cis-trans isomerase D Human genes 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Liquid Crystal (AREA)
Abstract
A liquid crystal panel dry etching process chamber production method and storage medium, comprising: the product cassette is transported to the equipment cassette position by an automatic machine to be produced; the equipment receives the formula information of the system; automatically matching process chambers that can be produced; reading and self-counting the accumulated time of the formula; judging whether the three process chambers produced at the same time are the same formula name, if yes, sequentially taking tablets, and if not, judging whether the accumulated formula time ratio of the different process chambers is greater than 0.6; if yes, carrying out production and tablet taking according to the tablet taking sequence of 1:2, and if not, carrying out production and tablet taking according to the tablet taking sequence of 1:3. The invention optimizes the conveying sequence flow by calculating the formula time of each process cavity, and improves the production efficiency of the dry etching machine.
Description
Technical Field
The invention belongs to the technical field of etching processes of liquid crystal panels, and particularly relates to a liquid crystal panel dry etching machine cavity production method and a storage medium.
Background
In a Liquid Crystal Display (LCD), a thin film typically based on aluminum (e.g., aluminum metal or aluminum alloy) may be used as the conductive metal, as well as the reflective metal layer. In the process of manufacturing, an aluminum film is usually formed in advance by various suitable methods, and then the undefined portion is removed by etching to leave a desired aluminum conductor Pattern (Pattern). In the etching step, wet etching or dry etching may be used. Here, wet etching means removing an unnecessary portion by an etching liquid, and dry etching means removing an unnecessary portion by a physical or chemical method after being excited into plasma by a reaction gas, thereby leaving a useful portion.
The dry etching machine is used for realizing the purpose of etching by plasmatizing the process gas and reacting with the film layer on the surface of the substrate in a low-pressure environment. The dry etching machine, as shown in fig. 1, comprises: three process chambers (PC: processamber) are independently and parallelly manufactured, two pre-vacuum chambers (LL: loadloadlock chamber) are responsible for switching the vacuum/atmospheric state of the substrate, and one vacuum transfer chamber (TM) is used for transferring the substrate between LL and PC.
Since the vacuum transfer chamber (TM) can only carry one substrate that is not being processed, the three Process Chambers (PC) need to be queued for substrate cyclic loading. And the substrate in the next process chamber can be carried out after the substrate in the previous process chamber is carried out. The existing dry etching machine is in a parallel production mode of three process chambers, and the three process chambers are sequentially fed into the wafer production according to a fixed sequence. However, there is a difference in the production time of the three chambers (especially, the process time difference is large in the mixed production under different process conditions), so that the chambers with shorter process time are in an idle state. Examples: the process time of the machine chamber 1 is set to 100 seconds, the process time of the process chambers 2 and 3 is set to 50 seconds, and the conveying time is set to 10 seconds.
The conventional production timing diagram is shown in fig. 2 (the dotted line shows the idle time).
(1) PC1, PC2, PC3 are transported in sequence for production.
(2) After the PC3 completes the conveyance, the transfer chamber performs the pre-conveyance of the PC 1.
PC2 and PC3 are in idle state due to short process time, and can be sequentially carried after PC1 is carried.
Therefore, the production efficiency of the existing dry etching machine is not optimal.
Disclosure of Invention
The invention aims to solve the technical problem of providing a cavity production method and a storage medium for a liquid crystal panel dry etching machine, which can improve the efficiency of the dry etching machine.
The invention is realized in the following way:
a liquid crystal panel dry etching process chamber production method comprises the following steps:
step S1: the product cassette is transported to the equipment cassette position by an automatic machine to be produced;
step S2: the equipment receives the formula information of the system;
step S3: automatically matching process chambers that can be produced;
step S4: reading and self-counting the accumulated time of the formula;
step S5: judging whether the three process chambers produced at present are the same formula name, if yes, turning to step S6, otherwise, turning to step S7;
step S6: sequentially taking slices;
step S7: judging whether the accumulated formula time ratio of different process chambers is more than 0.6; if yes, go to step S8, otherwise go to step S9;
step S8: producing and taking tablets according to a tablet taking sequence of 1:2;
step S9: and (5) producing and taking tablets according to a tablet taking sequence of 1:3.
A liquid crystal panel dry etching process chamber production storage medium having stored thereon a computer program which when executed performs the steps of:
step S1: the product cassette is transported to the equipment cassette position by an automatic machine to be produced;
step S2: the equipment receives the formula information of the system;
step S3: automatically matching process chambers that can be produced;
step S4: reading and self-counting the accumulated time of the formula;
step S5: judging whether the three process chambers produced at present are the same formula name, if yes, turning to step S6, otherwise, turning to step S7;
step S6: sequentially taking slices;
step S7: judging whether the accumulated formula time ratio of different process chambers is more than 0.6; if yes, go to step S8, otherwise go to step S9;
step S8: producing and taking tablets according to a tablet taking sequence of 1:2;
step S9: and (5) producing and taking tablets according to a tablet taking sequence of 1:3.
The invention has the advantages that: the formula time of each process cavity is calculated, so that the conveying sequence flow is optimized, and the production efficiency of the dry etching machine is improved.
Drawings
The invention will be further described with reference to the accompanying drawings, in conjunction with examples.
Fig. 1 is a schematic diagram of a dry etching apparatus.
Fig. 2 is a timing diagram of a prior art dry etching process chamber production.
Fig. 3 is a schematic flow chart of the method of the present invention.
Fig. 4 is a timing diagram of the dry etching process chamber production of the present invention.
Detailed Description
As shown in fig. 3, a method for producing a process chamber of a dry etching process of a liquid crystal panel includes the following steps:
step S1: the product cassette is transported to the equipment cassette position by an automatic machine to be produced;
step S2: the equipment receives the PPID of the CIM system, and the PPID comprises the formula name of the process and the designated process chamber information;
step S3: automatically matching process chambers in which the PPID production may be performed;
step S4: reading and self-counting the accumulated time of the formula;
step S5: judging whether the three process chambers produced at the same time are the same formula name, if yes, sequentially taking the tablets according to the sequence, otherwise, turning to step S6;
step S6: if the accumulated formula time ratio of different process chambers is greater than 0.6; then maintaining the original 1:2 tablet taking sequence for production tablet taking; if the accumulated formula time ratio of different process chambers is less than 0.6; and carrying out production and tablet taking according to a tablet taking sequence of 1:3.
For example, the production timing diagrams of the DRY etching process CH-DRY (Connecthole-DRY etching) PC1 process and the OC-DSC (organic Descum organic photoresist ashing) PC2 and PC3 process are shown in FIG. 4.
PC1, PC2, PC3 are transported in sequence for production.
The cumulative recipe time for each process chamber was 50s:100 s=0.5; 0.5 < 0.6.
And starting a 1:3 slice taking sequence.
The transfer chamber preferentially pre-conveys PC2/PC 3.
With device number A1DT020, on-line verification: before online, inquiring the goods passing history of the decision making system:
(1) all the 3 process chambers produce OC-DSC under full production conditions:
OC-DSC:64 pieces/hour; about 21.3 slices/chamber/hour.
(2) CH-DRY (DRY etching process, PC 1) process and OC-DSC (PC 2 and PC 3) process, under the full production condition:
CHE (CH-DRY): 15 pieces/hour; about 15 slices/chamber/hour.
OC-DSC:30 slices/hour; about 15 slices/chamber/hour.
After online, inquiring the goods passing history of the decision making system:
the CH-DRY (PC 1) process and the OC-DSC (PC 2 and PC 3) process are mixed for production, and under the full-production condition:
CHE:14 tablets/hour; about 14 slices/chamber/hour.
OC-DSC:42 tablets/hour; about 21 slices/chamber/hour.
Statistical analysis to obtain: after the mixing production function is on line, the production efficiency of the dry etching machine during mixing can be effectively improved.
The invention also provides a storage medium, on which a computer program is stored, which when run performs the steps of a liquid crystal panel dry etching process chamber production method described above.
The invention optimizes the conveying sequence flow by calculating the formula time of each process cavity, and improves the production efficiency of the dry etching machine.
The above examples and drawings are not intended to limit the form or form of the present invention, and any suitable variations or modifications thereof by those skilled in the art should be construed as not departing from the scope of the present invention.
Claims (2)
1. A method for producing a cavity of a liquid crystal panel dry etching machine is characterized by comprising the following steps: the method comprises the following steps:
step S1: the product cassette is transported to the equipment cassette position by an automatic machine to be produced;
step S2: the equipment receives the formula information of the system;
step S3: automatically matching process chambers that can be produced;
step S4: reading and self-counting the accumulated time of the formula;
step S5: judging whether the three process chambers produced at present are the same formula name, if yes, turning to step S6, otherwise, turning to step S7;
step S6: sequentially taking slices;
step S7: judging whether the accumulated formula time ratio of different process chambers is more than 0.6; if yes, go to step S8, otherwise go to step S9;
step S8: producing and taking tablets according to a tablet taking sequence of 1:2;
step S9: and (5) producing and taking tablets according to a tablet taking sequence of 1:3.
2. The liquid crystal panel dry etching process chamber production storage medium of claim 1, wherein: a computer program stored thereon, which when executed performs the steps of:
step S1: the product cassette is transported to the equipment cassette position by an automatic machine to be produced;
step S2: the equipment receives the formula information of the system;
step S3: automatically matching process chambers that can be produced;
step S4: reading and self-counting the accumulated time of the formula;
step S5: judging whether the three process chambers produced at present are the same formula name, if yes, turning to step S6, otherwise, turning to step S7;
step S6: sequentially taking slices;
step S7: judging whether the accumulated formula time ratio of different process chambers is more than 0.6; if yes, go to step S8, otherwise go to step S9;
step S8: producing and taking tablets according to a tablet taking sequence of 1:2;
step S9: and (5) producing and taking tablets according to a tablet taking sequence of 1:3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310637217.2A CN116859629A (en) | 2023-05-31 | 2023-05-31 | Liquid crystal panel dry etching machine process chamber production method and storage medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310637217.2A CN116859629A (en) | 2023-05-31 | 2023-05-31 | Liquid crystal panel dry etching machine process chamber production method and storage medium |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116859629A true CN116859629A (en) | 2023-10-10 |
Family
ID=88229349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310637217.2A Pending CN116859629A (en) | 2023-05-31 | 2023-05-31 | Liquid crystal panel dry etching machine process chamber production method and storage medium |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116859629A (en) |
-
2023
- 2023-05-31 CN CN202310637217.2A patent/CN116859629A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102166226B1 (en) | Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium | |
US20060253225A1 (en) | Operational control device, operational control method, program and storage medium thereof, for a plurality of power consumption systems | |
US7346412B2 (en) | Manufacturing method of semiconductor integrated circuit device | |
KR101715441B1 (en) | Substrate processing apparatus | |
US9633841B2 (en) | Methods for depositing amorphous silicon | |
US20060144822A1 (en) | Apparatus and method for wet-etching | |
US20110224819A1 (en) | Method for controlling critical dimension in semiconductor production process, and semiconductor manufacturing line supporting the same | |
JP2004319961A (en) | Substrate processing equipment, substrate processing method, and program for carrying out its method | |
CN116859629A (en) | Liquid crystal panel dry etching machine process chamber production method and storage medium | |
CN116884884B (en) | Warming-up sheet for grid side wall ICP etching, preparation method thereof and warming-up method | |
US6214751B1 (en) | Method for forming thin film in fabricating semiconductor device | |
JP2017117930A (en) | Processing system and processing program | |
JP2001250780A (en) | Application method of dummy substrate in semiconductor manufacturing device | |
JP2002299315A (en) | Method for manufacturing semiconductor device | |
US6732000B2 (en) | Unified method and system for manufacturing tool set performance analysis | |
CN117878035A (en) | Substrate production and conveying method and storage medium of liquid crystal panel dry etching machine | |
JP5981307B2 (en) | Processing method and processing apparatus | |
US20060137711A1 (en) | Single-wafer cleaning procedure | |
JP2889191B2 (en) | Dry etching method | |
KR100513404B1 (en) | Methode for controling management system of semiconductor manufacturing equipment | |
TW201925941A (en) | Method of processing target substrate | |
CN1186804C (en) | Post-treatment process of dry etched metal film and integral etching and photoresist-eliminating system | |
JP2003105544A (en) | Film deposition apparatus | |
JP2000144453A (en) | Etching system and etching method | |
JP2006502591A (en) | Asher equipment for semiconductor device manufacturing including cluster system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |