CN116845695A - Semiconductor optical amplifying device, device and system supporting optical power feedback regulation - Google Patents
Semiconductor optical amplifying device, device and system supporting optical power feedback regulation Download PDFInfo
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- CN116845695A CN116845695A CN202310634212.4A CN202310634212A CN116845695A CN 116845695 A CN116845695 A CN 116845695A CN 202310634212 A CN202310634212 A CN 202310634212A CN 116845695 A CN116845695 A CN 116845695A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 199
- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 230000009123 feedback regulation Effects 0.000 title claims abstract description 4
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- 230000003993 interaction Effects 0.000 claims description 5
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- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 7
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a semiconductor optical amplifying device supporting optical power feedback regulation, comprising: a tube shell; the coupling structure is encapsulated in the tube shell and comprises an optical fiber collimator, a first lens, an SOA chip, a second lens, an MPD chip and an output optical fiber; the optical path is transmitted into the SOA chip after passing through the optical fiber collimator and the first lens, the SOA chip amplifies through electro-optic conversion, the amplified optical path is transmitted to the output optical fiber after passing through the second lens, and the MPD chip arranged behind the second lens collects scattered light in the optical path and performs photoelectric conversion; a tenth pin connected with the positive electrode of the SOA chip and an eleventh pin connected with the negative electrode of the SOA chip; and a third pin connected with the positive electrode of the MPD chip and a fourth pin connected with the negative electrode of the MPD chip. The invention can monitor and feed back the optical power value on line and realize real-time adjustment of the optical power value while meeting the requirement of optical power amplification.
Description
Technical Field
The present invention relates to the field of semiconductor optical amplifiers, and in particular, to a semiconductor optical amplifying device, apparatus and system for supporting optical power feedback adjustment.
Background
A semiconductor optical amplifier (Semiconductor Optical Amplifier, SOA) is a device made of a semiconductor material that amplifies optical power using the stimulated phenomenon of energy level transitions. The SOA covers the frequency band of 1300 nm-1600 nm, can be used for a 1310nm window and a 1550nm window, and does not need gain locking when being used in a DWDM system. The SOA has the advantages of small volume, simple structure, low cost, long service life, easy integration with other optical devices, low power consumption and the like. Along with the continuous development and construction of the optical communication industry, the use amount of the SOA is continuously increased every year, and the SOA is widely applied to the fields of optical fiber sensing, medical imaging, testing, measurement and the like.
The existing related SOA patents are all single semiconductor amplifying devices or semiconductor amplifying devices, and the semiconductor amplifying devices can monitor output optical power, but the optical paths are required to be separated, so that the optical power loss is large, the volume is large and the power is high.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a semiconductor optical amplification device, a device and a system supporting optical power feedback adjustment, which can monitor and feed back an optical power value on line and realize real-time adjustment of the optical power value while meeting the optical power amplification.
The technical scheme adopted for solving the technical problems is as follows:
in one aspect, a semiconductor optical amplifier device supporting optical power feedback adjustment includes:
a tube shell;
the coupling structure is encapsulated in the tube shell and comprises an optical fiber collimator, a first lens, an SOA chip, a second lens, an MPD chip and an output optical fiber; the optical path is transmitted into the SOA chip after passing through the optical fiber collimator and the first lens, the SOA chip amplifies through electro-optic conversion, the amplified optical path is transmitted to the output optical fiber after passing through the second lens, and the MPD chip arranged behind the second lens collects scattered light in the optical path and performs photoelectric conversion;
a tenth pin connected with the positive electrode of the SOA chip and an eleventh pin connected with the negative electrode of the SOA chip;
and a third pin connected with the positive electrode of the MPD chip and a fourth pin connected with the negative electrode of the MPD chip.
Preferably, the semiconductor optical amplifying device supporting optical power feedback adjustment further includes:
the semiconductor refrigerator is packaged in the tube shell and used for adjusting the working temperature of the SOA chip;
a first pin connected with the positive electrode of the semiconductor refrigerator and a fourteenth pin connected with the negative electrode of the semiconductor refrigerator.
Preferably, the semiconductor optical amplifying device supporting optical power feedback adjustment further includes:
a heat sink; the heat sink provides a carrier for the coupling structure for connecting the coupling structure to the semiconductor refrigerator.
Preferably, the semiconductor optical amplifying device supporting optical power feedback adjustment further includes:
the thermistor is packaged in the tube shell and used for collecting the working temperature of the SOA chip;
and a second pin connected with one end of the thermistor and a fifth pin connected with the other end of the thermistor.
Preferably, the semiconductor optical amplifying device supporting optical power feedback adjustment further includes:
a first thin film circuit; the SOA chip and the thermistor are arranged on the first thin film circuit.
Preferably, the semiconductor optical amplifying device supporting optical power feedback adjustment further includes:
a second thin film circuit; the MPD chip is arranged on the second thin film circuit.
Preferably, the semiconductor optical amplifying device supporting optical power feedback adjustment further includes:
a first cushion block for supporting the first lens and a second cushion block for supporting the second lens.
In another aspect, a semiconductor optical amplifier apparatus supporting optical power feedback adjustment includes the semiconductor optical amplifier device, and further includes: the device comprises a main control unit, an SOA power supply unit and an MPD optical power feedback unit;
the SOA power supply unit is connected with the semiconductor optical amplifying device through the tenth pin and the eleventh pin to output a constant current value required by the operation of the semiconductor optical amplifying device;
the MPD optical power feedback unit is connected with the semiconductor optical amplifying device through the third pin and the fourth pin so as to collect the optical power value of the output end of the semiconductor optical amplifying device and send the optical power value to the main control unit;
and the main control unit is respectively connected with the MPD optical power feedback unit and the SOA power supply unit so as to adjust the constant current value output by the SOA power supply unit according to the optical power value.
Preferably, the semiconductor optical amplifier device supporting optical power feedback adjustment further comprises:
a TEC temperature control unit; the TEC temperature control unit is connected with the semiconductor optical amplifying device through the first pin, the second pin, the fifth pin and the fourteenth pin, receives the working temperature collected by the thermistor and sends the working temperature to the main control unit, and the main control unit controls the TEC temperature control unit to adjust the current of the semiconductor refrigerator according to the collected working temperature so that the semiconductor optical amplifying device works at a temperature value set by the main control unit.
In yet another aspect, a semiconductor optical amplifier system supporting optical power feedback adjustment includes the semiconductor optical amplifier device, further comprising: a terminal device; the terminal device is connected with the main control unit of the semiconductor optical amplifier device for interaction.
The invention has the following beneficial effects:
(1) The invention comprises an SOA chip and an MPD chip, wherein the MPD chip receives scattered light after the second lens to realize indirect measurement of optical power intensity (optical power value) on an optical path, so that the optical power is amplified, the optical power value is monitored on line, and finally, the real-time adjustment of the power value (namely the amplification factor) is realized, thereby meeting the requirement of users;
(2) The invention adopts a coupling mode with high conversion efficiency (the input end adopts a double-lens coupling mode comprising an optical fiber collimator and a first lens, and the output end adopts a single-lens coupling mode comprising a second lens), so that the coupling efficiency can be improved, and the optical power loss in the transmission process can be reduced;
(3) The invention adopts reasonable space layout, and accurately collects the power value of the main light path under the condition of not influencing the power of the main light path;
(4) The invention adopts the high-precision temperature sensor thermistor, so that the temperature monitoring is more accurate, and the accuracy of optical power control is improved;
(5) The invention can adjust the optical power value on line through the upper software or APP of the terminal equipment, thereby reducing the external detection equipment, having faster processing speed and lower power consumption; the constant current value can be accurately controlled and output through upper software or APP, and the output light power value is accurately controlled, so that the adjustable precision is higher.
(6) The invention has strong expandability, and can customize peripheral circuits, upper software or APP and the like according to the requirements of users.
The present invention will be described in further detail with reference to the accompanying drawings and examples, but the semiconductor optical amplifying device, apparatus and system supporting optical power feedback adjustment of the present invention is not limited to the examples.
Drawings
Fig. 1 is a schematic diagram of an external structure of a semiconductor optical amplifying device according to a first embodiment of the present invention;
fig. 2 is an internal plan view of a semiconductor optical amplifying device according to a first embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of a semiconductor optical amplifying device according to a first embodiment of the present invention;
fig. 4 is a schematic diagram of an input/output optical path of a semiconductor optical amplifying device according to a first embodiment of the present invention;
fig. 5 is a block diagram of a semiconductor optical amplifier device according to a second embodiment of the present invention;
fig. 6 is a block diagram of a semiconductor optical amplifier system according to a third embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments, and that all other embodiments obtained by persons of ordinary skill in the art without making creative efforts based on the embodiments in the present invention are within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it should be noted that the terms "first," "second," and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "provided," "engaged/connected," "connected," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, may be a detachable connection, or may be an integral connection, may be a mechanical connection, may be an electrical connection, may be a direct connection, may be an indirect connection via an intermediary, may be a communication between two elements, and for one of ordinary skill in the art, the specific meaning of the terms in this disclosure may be understood in a specific case.
Example 1
Referring to fig. 1 to 4, a semiconductor optical amplifying device 10 supporting optical power feedback adjustment of the present embodiment includes:
a cartridge 114;
the coupling structure encapsulated in the tube shell 114 comprises an optical fiber collimator 105, a first lens 102, an SOA chip 101, a second lens 103, an MPD chip 104 and an output optical fiber 106; the optical path is transmitted into the SOA chip 101 after passing through the optical fiber collimator 105 and the first lens 102, the SOA chip 101 amplifies through electro-optical conversion, the amplified optical path is transmitted to the output optical fiber 106 after passing through the second lens 103, and the MPD chip 104 arranged behind the second lens 103 collects scattered light in the optical path and performs photoelectric conversion;
a tenth PIN10 connected to the positive electrode of the SOA chip 101, and an eleventh PIN11 connected to the negative electrode of the SOA chip 101;
and a third PIN PIN3 connected with the positive electrode of the MPD chip 104 and a fourth PIN PIN4 connected with the negative electrode of the MPD chip 104.
In this embodiment, the semiconductor optical amplifying device 10 supporting optical power feedback adjustment further includes:
a semiconductor refrigerator 107 encapsulated in the package 114 for adjusting the operating temperature of the SOA chip 101;
a first PIN1 connected to the positive electrode of the semiconductor refrigerator 107, and a fourteenth PIN14 connected to the negative electrode of the semiconductor refrigerator 107.
In this embodiment, the semiconductor optical amplifying device 10 supporting optical power feedback adjustment further includes:
a heat sink 111; the heat sink 111 provides a carrier for the coupling structure for connecting the coupling structure to the semiconductor refrigerator 107.
Further, the semiconductor optical amplifying device 10 supporting optical power feedback adjustment further includes:
a thermistor 108 encapsulated in the package 114 for acquiring the operating temperature of the SOA chip 101;
a second PIN2 connected to one end of the thermistor 108, and a fifth PIN5 connected to the other end of the thermistor 108.
Specifically, the semiconductor optical amplifying device 10 supporting optical power feedback adjustment further includes:
a first thin film circuit 109; the SOA chip 101 and the thermistor 108 are disposed on the first thin film circuit 109.
The semiconductor optical amplifying device 10 supporting optical power feedback adjustment further includes:
a second thin film circuit 110; the MPD chip 104 is disposed on the second thin film circuit 110.
The semiconductor optical amplifying device 10 supporting optical power feedback adjustment further includes:
a first pad 112 for supporting the first lens 102 and a second pad 113 for supporting the second lens 103.
Referring to fig. 1, a semiconductor optical amplifying device 10 supporting optical power feedback adjustment according to this embodiment may be packaged as a general 14PIN Butterfly package.
In this embodiment, pins are defined as follows:
| 1 | TEC(+) | 14 | TEC(-) |
| 2 | Thermistor | 13 | NC |
| 3 | Anode | 12 | NC |
| 4 | Cathode | 11 | Chip(-) |
| 5 | Thermistor | 10 | Chip(+) |
| 6 | NC | 9 | NC |
| 7 | NC | 8 | NC |
pin definition description: PIN10 and PIN11 are respectively connected with the positive pole and the negative pole of the SOA chip 101; PIN3 and PIN4 are respectively connected with the positive electrode and the negative electrode of the MPD chip 104 (Monitor Photo Detector, micro photoelectric detector); PIN1 and PIN14 are respectively connected with the positive electrode and the negative electrode of TEC (Thermo-Electric refrigerator 107); PIN2 and PIN5 are connected to both ends of the thermistor 108, respectively.
It should be noted that, the correspondence between each device and the pin may be adjusted as required, and the correspondence between the pin and the device is not limited in this embodiment. The positive and negative electrodes of the SOA chip 101 may be connected to the seventh pin and the eighth pin, respectively.
The respective devices in fig. 2 and 3 will be described in detail as follows.
SOA chip 101: the SOA chip 101 (semiconductor optical amplification chip) includes two wavelengths of 1310nm and 1550 nm;
first lens 102 and second lens 103: the first lens 102 emits the light path to be amplified in the optical fiber through a C-lens (optical fiber collimator 105), and the light path enters the SOA chip 101 for amplification after passing through the first lens 102; the second lens 103 emits the light amplified by the SOA chip 101, and the light enters the output optical fiber 106 after finishing the light waves;
MPD chip 104: the micro photoelectric detector is used for receiving the scattered light after the second lens 103 and indirectly testing the light power intensity on the main light path after photoelectric conversion;
fiber collimator 105: c-lens, optical fiber with spherical micro lens, used for optical path transmission;
output optical fiber 106: pigtail, a coated bare fiber with a glass sleeve, is used for optical path transmission;
the semiconductor refrigerator 107, TEC and the thermistor 108 work together to ensure that the SOA chip 101 stably works at the contact temperature of 25 ℃;
thermistor 108: the thermistor 108 includes an NTC thermistor 108, i.e., a negative temperature coefficient thermistor 108, and the higher the temperature is, the smaller the resistance, and typically the device is required to operate at 25 ℃, i.e., when the resistance of the thermistor 108 is 10K;
first thin film circuit 109 and second thin film circuit 110: the first thin film circuit 109 and the second thin film circuit 110 provide a medium for realizing eutectic soldering for the corresponding chip and the heat sink 111 thereon, and facilitate gold wire bonding and heat conduction;
first pad 112 and second pad 113: support is provided for the first lens 102 and the second lens 103 respectively, and deformation influence of metal on the lenses is reduced;
heat sink 111: providing a carrier for the coupling structure, connecting the coupling structure with the semiconductor refrigerator 107, and having good heat conduction function; the heat sink 111 is disposed above the semiconductor refrigerator 107; the first thin film circuit 109, the second thin film circuit 110, the first pad 112 and the second pad 113 are all disposed on the heat sink 111;
cartridge 114: the 14PIN butterfly package provides a carrier and a closed light path environment for the device, and provides a medium for the connection of internal and external circuits.
Referring to fig. 4, which is a schematic diagram of an input/output optical path of the present embodiment, the optical path is transmitted from left to right according to arrows, and is amplified by electro-optical conversion of the chip after being transmitted into the SOA chip 101 through the optical fiber collimator 105 and the first lens 102, and the amplified optical path is transmitted into the output optical fiber 106 of the pigail after passing through the second lens 103, and the MPD chip 104 behind the second lens 103 collects scattered light in the optical path, and is transmitted into the peripheral collection circuit after photoelectric conversion.
Example two
Referring to fig. 5, a semiconductor optical amplifier device 20 supporting optical power feedback adjustment according to the present invention includes a semiconductor optical amplifying device 10 according to the first embodiment, and further includes: the MPD optical power control system comprises a main control unit 201, an SOA power supply unit 202, an MPD optical power feedback unit 203 and a TEC temperature control unit 204;
the SOA power supply unit 202 is connected with the semiconductor optical amplifying device 10 through the tenth PIN10 and the eleventh PIN11 to output a constant current value required for the operation of the semiconductor optical amplifying device 10;
the MPD optical power feedback unit 203 is connected to the semiconductor optical amplifying device 10 through the third PIN3 and the fourth PIN4, so as to collect an optical power value of an output end of the semiconductor optical amplifying device 10, and send the optical power value to the main control unit 201;
the main control unit 201 is respectively connected with the MPD optical power feedback unit 203 and the SOA power supply unit 202, so as to adjust a constant current value output by the SOA power supply unit 202 according to the optical power value;
a TEC temperature control unit 204; the TEC temperature control unit 204 is connected with the semiconductor optical amplifying device 10 through the first PIN1, the second PIN2, the fifth PIN5 and the fourteenth PIN14, receives the working temperature collected by the thermistor 108 and sends the working temperature to the main control unit 201, and the main control unit 201 controls the TEC temperature control unit 204 to adjust the current of the semiconductor refrigerator 107 according to the collected working temperature, so that the semiconductor optical amplifying device 10 works at the temperature value set by the main control unit 201.
The respective devices will be described in detail as follows.
Semiconductor optical amplifying device 10: constant current power supply is provided by an SOA power supply unit 202 circuit, temperature maintenance is realized through interaction with a TEC temperature control unit 204, dynamic balance is realized at the temperature of 25 ℃, and output optical power acquired in an optical path is transmitted to an MPD optical power feedback unit 203 circuit through photoelectric conversion;
TEC temperature control unit 204: the main control unit 201 controls the set temperature, the TEC temperature control unit 204 also monitors the working temperature of the semiconductor optical amplifying device 10 in real time by collecting the resistance value of the NTC thermistor 108 in the semiconductor optical amplifying device 10, and adjusts the internal temperature of the semiconductor optical amplifying device 10 by controlling the current of the TEC in the semiconductor optical amplifying device 10 through a circuit so that the temperature value set by the main control unit 201 can be used;
the SOA power supply unit 202: controlled by the main control unit 201, the constant current required by the operation of the semiconductor optical amplifying device 10 is provided, and the constant current value is changed at any time according to the adjustment of the main control circuit;
MPD optical power feedback unit 203: the optical power value of the main optical path at the output end of the semiconductor optical amplifying device 10 through the MPD chip 104 is fed back to the main control unit 201;
the main control unit 201: the working temperature inside the semiconductor optical amplifying device 10 is controlled through the TEC temperature control unit 204, stable constant current is provided for the semiconductor optical amplifying device 10 through the SOA power supply unit 202, and the optical power value of the main optical path is collected through the MPD optical power feedback unit 203.
The SOA power supply unit 202, the semiconductor optical amplifying device 10 and the MPD optical power feedback unit 203 form a closed control loop, and the constant current value of the SOA power supply unit 202 is adjusted by collecting the optical power value of the main optical path in the semiconductor optical amplifying device 10, so that the optical power value of the main optical path of the semiconductor optical amplifying device 10 is changed, and the adjustment of the optical power amplification factor of the main optical path is realized.
It should be noted that, the main control unit 201 includes an MCU chip or a single chip microcomputer chip.
Example III
Referring to fig. 6, a semiconductor optical amplifier system supporting optical power feedback adjustment according to the present invention includes a semiconductor optical amplifier device 20 according to the second embodiment, and further includes: a terminal device 30; the terminal device 30 is connected to the main control unit 201 of the semiconductor optical amplifier device 20 for interaction.
Specifically, the terminal device 30 includes a mobile phone, a computer, or a proprietary terminal device 30, which is not limited in this embodiment. The terminal device 30 is provided with upper software or a mobile phone APP, and the terminal device 30 can adjust the optical power value and/or the constant current value on line (automatically or manually) through the upper software or the mobile phone APP, and simultaneously can display the working temperature, the current, the optical power value and the like in real time, and can support the storage of historical data, the derivation of the historical data and the like as required.
Further, the semiconductor optical amplifier device 20 further includes a bluetooth unit 205 to communicate with the terminal device 30 for information interaction.
The optical power value is adjusted on line through upper software or APP of the terminal equipment 30, so that external detection equipment is reduced, the processing speed is higher, and the power consumption is lower; the constant current value can be accurately controlled and output through upper software or APP, and the output light power value is accurately controlled, so that the adjustable precision is higher.
The foregoing is merely a preferred embodiment of the invention, and it should be noted that modifications could be made by those skilled in the art without departing from the principles of the invention, which modifications would also be considered to be within the scope of the invention.
Claims (10)
1. A semiconductor optical amplifier device supporting optical power feedback adjustment, comprising:
a tube shell;
the coupling structure is encapsulated in the tube shell and comprises an optical fiber collimator, a first lens, an SOA chip, a second lens, an MPD chip and an output optical fiber; the optical path is transmitted into the SOA chip after passing through the optical fiber collimator and the first lens, the SOA chip amplifies through electro-optic conversion, the amplified optical path is transmitted to the output optical fiber after passing through the second lens, and the MPD chip arranged behind the second lens collects scattered light in the optical path and performs photoelectric conversion;
a tenth pin connected with the positive electrode of the SOA chip and an eleventh pin connected with the negative electrode of the SOA chip;
and a third pin connected with the positive electrode of the MPD chip and a fourth pin connected with the negative electrode of the MPD chip.
2. The semiconductor optical amplifier device supporting optical power feedback adjustment according to claim 1, further comprising:
the semiconductor refrigerator is packaged in the tube shell and used for adjusting the working temperature of the SOA chip;
a first pin connected with the positive electrode of the semiconductor refrigerator and a fourteenth pin connected with the negative electrode of the semiconductor refrigerator.
3. The semiconductor optical amplifier device supporting optical power feedback adjustment according to claim 2, further comprising:
a heat sink; the heat sink provides a carrier for the coupling structure for connecting the coupling structure to the semiconductor refrigerator.
4. The semiconductor optical amplifier device supporting optical power feedback adjustment according to claim 2, further comprising:
the thermistor is packaged in the tube shell and used for collecting the working temperature of the SOA chip;
and a second pin connected with one end of the thermistor and a fifth pin connected with the other end of the thermistor.
5. The semiconductor optical amplifier device supporting optical power feedback adjustment according to claim 4, further comprising:
a first thin film circuit; the SOA chip and the thermistor are arranged on the first thin film circuit.
6. The semiconductor optical amplifier device supporting optical power feedback adjustment according to claim 1, further comprising:
a second thin film circuit; the MPD chip is arranged on the second thin film circuit.
7. The semiconductor optical amplifier device supporting optical power feedback adjustment according to claim 1, further comprising:
a first cushion block for supporting the first lens and a second cushion block for supporting the second lens.
8. A semiconductor optical amplifier apparatus supporting optical power feedback adjustment, comprising the semiconductor optical amplifier device of claim 4, further comprising: the device comprises a main control unit, an SOA power supply unit and an MPD optical power feedback unit;
the SOA power supply unit is connected with the semiconductor optical amplifying device through the tenth pin and the eleventh pin to output a constant current value required by the operation of the semiconductor optical amplifying device;
the MPD optical power feedback unit is connected with the semiconductor optical amplifying device through the third pin and the fourth pin so as to collect the optical power value of the output end of the semiconductor optical amplifying device and send the optical power value to the main control unit;
and the main control unit is respectively connected with the MPD optical power feedback unit and the SOA power supply unit so as to adjust the constant current value output by the SOA power supply unit according to the optical power value.
9. The semiconductor optical amplifier device supporting optical power feedback adjustment according to claim 8, further comprising:
a TEC temperature control unit; the TEC temperature control unit is connected with the semiconductor optical amplifying device through the first pin, the second pin, the fifth pin and the fourteenth pin, receives the working temperature collected by the thermistor and sends the working temperature to the main control unit, and the main control unit controls the TEC temperature control unit to adjust the current of the semiconductor refrigerator according to the collected working temperature so that the semiconductor optical amplifying device works at a temperature value set by the main control unit.
10. A semiconductor optical amplifier system supporting optical power feedback regulation, comprising the semiconductor optical amplifier device of claim 9, further comprising: a terminal device; the terminal device is connected with the main control unit of the semiconductor optical amplifier device for interaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310634212.4A CN116845695A (en) | 2023-05-31 | 2023-05-31 | Semiconductor optical amplifying device, device and system supporting optical power feedback regulation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310634212.4A CN116845695A (en) | 2023-05-31 | 2023-05-31 | Semiconductor optical amplifying device, device and system supporting optical power feedback regulation |
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| Publication Number | Publication Date |
|---|---|
| CN116845695A true CN116845695A (en) | 2023-10-03 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117580214A (en) * | 2023-12-08 | 2024-02-20 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet light source system with thermal control and nondestructive optical power detection functions |
| CN118011564A (en) * | 2024-03-06 | 2024-05-10 | 苏州天孚光通信股份有限公司 | Butterfly-shaped semiconductor amplifier and coupling preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117580214A (en) * | 2023-12-08 | 2024-02-20 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet light source system with thermal control and nondestructive optical power detection functions |
| CN118011564A (en) * | 2024-03-06 | 2024-05-10 | 苏州天孚光通信股份有限公司 | Butterfly-shaped semiconductor amplifier and coupling preparation method thereof |
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