CN116844869A - Heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor - Google Patents
Heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor Download PDFInfo
- Publication number
- CN116844869A CN116844869A CN202310901965.7A CN202310901965A CN116844869A CN 116844869 A CN116844869 A CN 116844869A CN 202310901965 A CN202310901965 A CN 202310901965A CN 116844869 A CN116844869 A CN 116844869A
- Authority
- CN
- China
- Prior art keywords
- heat treatment
- tantalum
- mno
- solid electrolyte
- tantalum capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 88
- 238000010438 heat treatment Methods 0.000 title claims abstract description 68
- 239000003990 capacitor Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000007784 solid electrolyte Substances 0.000 title claims abstract description 18
- 238000001816 cooling Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052704 radon Inorganic materials 0.000 claims description 3
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000000047 product Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000000576 coating method Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005245 sintering Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910002555 FeNi Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/0425—Electrodes or formation of dielectric layers thereon characterised by the material specially adapted for cathode
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention belongs to the technical field of tantalum capacitors, and particularly relates to a heat treatment method for reducing equivalent series resistance of a solid electrolyte tantalum capacitor; the invention changes MnO by special atmosphere heat treatment based on the traditional manufacturing process 2 Band gap width and at MnO 2 Oxygen vacancies are formed in the layer to enhance MnO 2 Thereby reducing the tantalum capacitor ESR. The equivalent series resistance of the solid electrolyte tantalum capacitor is reduced by at least 21.4%, so that the usability of the tantalum capacitor in an actual circuit is improved.
Description
Technical Field
The invention belongs to the technical field of tantalum capacitors, and particularly relates to a heat treatment method for reducing equivalent series resistance of a solid electrolyte tantalum capacitor.
Background
The solid electrolyte tantalum capacitor has the advantages of long service life, small volume, high reliability and the like, and is widely applied to the fields of aviation, aerospace, military, communication, medical treatment, consumer electronics and the like. The Equivalent Series Resistance (ESR) of a solid electrolyte tantalum capacitor is one of the key parameters of tantalum capacitors. The smaller the ESR, the closer the tantalum capacitor is to ideal capacitance. In an actual circuit, the tantalum capacitor with small ESR has better filtering effect, and meanwhile, the heating value of the tantalum capacitor is lower, so that the service life of the capacitor can be further prolonged under the same condition.
ESR of tantalum capacitor is composed of dielectric film resistor, dielectric film and MnO 2 Layer contact resistance, mnO 2 Resistance of the layer and graphite/silver paste material, contact resistance between each material, and MnO 2 The ESR value is most affected by the material resistance of (c) and the contact resistance between the materials. The traditional method for reducing ESR comprises the steps of manufacturing the multi-core parallel tantalum capacitor, selecting silver plating on the surface of the FeNi alloy lead frame and adopting copper alloy as the lead frame, but the manufacturing difficulty of the multi-core parallel tantalum capacitor is high, the volume utilization rate is low, and the cost of silver plating on the surface of the FeNi alloy lead frame and adopting the copper alloy frame is high.
Patent document publication No. CN115188593B discloses a tantalum capacitor MnO 2 Interface treatment method for cathode layer, which will form MnO 2 Immersing anode tantalum blocks of the cathode layer into interface treatment liquid, standing and drying, immersing in manganese nitrate solution, drying, decomposing, coating a graphite layer after cooling, and carrying out high-temperature heat treatment on the tantalum blocks at 250 ℃ for 30-60min. The method is used for carrying out related treatment for reducing MnO 2 Interface contact resistance between graphite, wherein the heat treatment object is coated graphite layer, mnO is formed 2 Anode tantalum blocks of cathode layer, the heat treatment to improve interfacial stability between materials, does not involve MnO 2 Improvement of material resistance.
Disclosure of Invention
In order to solve the defects and shortcomings of the prior art, the invention aims to provide a heat treatment method for reducing the equivalent series resistance of a solid electrolyte tantalum capacitor.
The technical scheme adopted by the invention is as follows:
a heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor is characterized in that tantalum powder is formed and sintered to prepare anode tantalum blocks, and dielectric oxide film and MnO are formed and coated on the anode tantalum blocks 2 And (3) the layer, and then placing the tantalum block into a heat treatment furnace for heat treatment, wherein the heat treatment process comprises the following steps of:
(1) Atmosphere preparation stage: closing a furnace door, vacuumizing a furnace chamber, and then filling any one gas or a mixture of two or more gases selected from nitrogen, ammonia, argon, helium, neon, krypton, xenon, radon and sulfur vapor into the furnace chamber;
(2) And (3) heating: raising the temperature to 200-400 ℃ at a heating rate of 1-20 ℃/min;
(3) Constant temperature stage: maintaining at 200-400 deg.c for 1-3 hr;
(4) And (3) a cooling stage: and cooling the tantalum block to room temperature along with the furnace after the constant temperature is finished.
And any one gas or a plurality of mixed gases of two or more of nitrogen, ammonia, argon, helium, neon, krypton, xenon, radon and sulfur vapor is filled in the atmosphere preparation stage.
The existing heat treatment technology of anode tantalum blocks is to heat treat the anode tantalum blocks coated with a graphite layer, and the heat treatment process does not contain special atmosphere, but improves graphite and MnO 2 Contact resistance between them but not improvement of MnO 2 Material resistance. The invention carries out specific atmosphere heat treatment on the anode tantalum block without coating the graphite layer, and the graphite and MnO are not involved because the graphite layer is not coated during the heat treatment 2 Improvement of contact resistance between them, the present invention is achieved by improving MnO from the results of implementation 2 The material resistance, which results in a reduction in tantalum capacitor ESR, is unique to the timing of the heat treatment of the anode tantalum pellet and the atmosphere of the heat treatment. The invention has the beneficial effects of:
based on the traditional manufacturing process, the equivalent series resistance of the solid electrolyte tantalum capacitor is reduced by at least 21.4%, so that the usability of the tantalum capacitor in an actual circuit is improved.
The invention is specifically realized by the method of MnO 2 Modification of materials to reduce MnO 2 The material resistance of (2) is based on the principle that gas atoms are permeated into MnO by special atmosphere heat treatment 2 And at MnO 2 Oxygen vacancies are formed in the layer, changing MnO 2 Reducing the band gap width of MnO 2 The method is convenient to implement, relatively low in cost and obvious in effect.
Compared with the patent CN115188593B, the invention can reduce MnO 2 The object of the heat treatment according to the invention is an uncoated graphite layer, formed MnO 2 The anode tantalum block of the cathode layer is prepared by placing the anode tantalum block in a heat treatment furnace, vacuumizing, introducing a specific atmosphere for making atoms of gas permeate MnO, and heating to heat treatment temperature 2 And form oxygen vacancies, thereby changing MnO 2 Such that MnO 2 The resistance of the material is reduced, the ESR of the tantalum capacitor is reduced, and the specific heating rate is used for guaranteeing MnO 2 The internal and external heat are uniformly heated, and the specific heat treatment temperature is used for providing enough energy to enable MnO to be formed 2 The activation and the gas atoms are convenient for infiltration.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
A heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor is to process a batch of A shell anode tantalum blocks with a specification of 16V6.8 mu F, prepare anode tantalum blocks by molding and sintering tantalum powder, and then form and coat dielectric oxide film and MnO on the anode tantalum blocks 2 And (3) the layer, and then placing the tantalum block into a heat treatment furnace for heat treatment, wherein the heat treatment process comprises the following steps of:
(1) Atmosphere preparation stage: closing a furnace door, vacuumizing a furnace chamber, and then filling nitrogen into the furnace chamber;
(2) And (3) heating: raising the temperature to 300 ℃ at a heating rate of 12 ℃/min;
(3) Constant temperature stage: maintaining at 300 ℃ for 2 hours;
(4) And (3) a cooling stage: and cooling the tantalum block to room temperature along with the furnace after the constant temperature is finished.
Example 2
A heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor is to process a batch of H-shell anode tantalum blocks with the specification of 10V470 mu F, prepare the anode tantalum blocks by molding and sintering tantalum powder, and then form and coat dielectric oxide film and MnO on the anode tantalum blocks 2 And (3) the layer, and then placing the tantalum block into a heat treatment furnace for heat treatment, wherein the heat treatment process comprises the following steps of:
(1) Atmosphere preparation stage: closing a furnace door, vacuumizing a furnace chamber, and then filling helium into the furnace chamber;
(2) And (3) heating: raising the temperature to 320 ℃ at a heating rate of 5 ℃/min;
(3) Constant temperature stage: maintaining at 320 ℃ for 1.5h;
(4) And (3) a cooling stage: and cooling the tantalum block to room temperature along with the furnace after the constant temperature is finished.
Example 3
A heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor is to process a batch of H-shell anode tantalum blocks with the specification of 6.3V680 mu F, prepare anode tantalum blocks by molding and sintering tantalum powder, and then form and coat dielectric oxide film and MnO on the anode tantalum blocks 2 And (3) the layer, and then placing the tantalum block into a heat treatment furnace for heat treatment, wherein the heat treatment process comprises the following steps of:
(1) Atmosphere preparation stage: closing a furnace door, vacuumizing a furnace chamber, and then filling ammonia gas into the furnace chamber;
(2) And (3) heating: raising the temperature to 240 ℃ at a heating rate of 2.3 ℃/min;
(3) Constant temperature stage: maintaining at 240 ℃ for 3 hours;
(4) And (3) a cooling stage: and cooling the tantalum block to room temperature along with the furnace after the constant temperature is finished.
Example 4
A heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor is to process a batch of E-shell anode tantalum blocks with the specification of 35V22 mu F, prepare anode tantalum blocks by molding and sintering tantalum powder, and then form and coat dielectric oxide film and MnO on the anode tantalum blocks 2 And (3) the layer, and then placing the tantalum block into a heat treatment furnace for heat treatment, wherein the heat treatment process comprises the following steps of:
(1) Atmosphere preparation stage: closing a furnace door, vacuumizing a furnace chamber, and then filling argon and sulfur vapor into the furnace chamber;
(2) And (3) heating: raising the temperature to 340 ℃ at a heating rate of 15 ℃/min;
(3) Constant temperature stage: maintaining at 340 ℃ for 1h;
(4) And (3) a cooling stage: and cooling the tantalum block to room temperature along with the furnace after the constant temperature is finished.
Comparative example 1
Processing a batch of A-shell anode tantalum blocks with the specification of 16V6.8 mu F, forming and sintering tantalum powder into anode tantalum blocks, and forming and coating a dielectric oxide film and MnO on the anode tantalum blocks 2 The layer was not heat treated.
Comparative example 2
Processing a batch of A-shell anode tantalum blocks with the specification of 16V6.8 mu F, forming and sintering tantalum powder into anode tantalum blocks, and forming and coating a dielectric oxide film and MnO on the anode tantalum blocks 2 The layers were heat treated under the same temperature conditions as in example 1, but without evacuation and without aeration during the heat treatment, comprising the steps of:
(1) And (3) heating: raising the temperature to 300 ℃ at a heating rate of 12 ℃/min;
(2) Constant temperature stage: maintaining at 300 ℃ for 2 hours;
(3) And (3) a cooling stage: and cooling the tantalum block to room temperature along with the furnace after the constant temperature is finished.
Comparative example 3
Processing a batch of H-shell anode tantalum blocks with the specification of 10V470 mu F, forming and sintering tantalum powder into anode tantalum blocks, and forming and coating the anode tantalum blocksDielectric oxide film and MnO are formed on anode tantalum block 2 The layer was not heat treated.
Comparative example 4
Processing a batch of H-shell anode tantalum blocks with the specification of 6.3V680 mu F, forming and sintering tantalum powder into anode tantalum blocks, and forming and coating a dielectric oxide film and MnO on the anode tantalum blocks 2 The layer was not heat treated.
Comparative example 5
Processing a batch of E-shell anode tantalum blocks with the specification of 35V22 mu F, forming and sintering tantalum powder into anode tantalum blocks, and forming and coating a dielectric oxide film and MnO on the anode tantalum blocks 2 The layer was not heat treated.
After the whole process of the above examples and comparative examples is completed, the products of the examples and comparative examples are continuously subjected to the graphite coating and silver paste coating processes according to the prior art, and 10 samples of each group of products are selected for ESR measurement, and the comparison results are shown in tables 1-4.
TABLE 1 ESR measurement results in 16V-6.8. Mu.F-A Shell products
TABLE 2 ESR measurement results in 10V-470. Mu.F-H Shell products
TABLE 3 Medium ESR measurement results for 6.3V-680. Mu.F-H Shell products
Table 4 results of ESR measurements in 35V-22. Mu.F-E shell products
As can be seen from the above test data, in the A-shell product of 16V6.8. Mu.F specification, the average ESR measured in the product of example 1 subjected to the atmosphere heat treatment was reduced by 25.5% as compared with the product of comparative example 1 not subjected to the heat treatment, and the average ESR measured in the product of comparative example 3 subjected to the heat treatment but not subjected to the atmosphere was increased by 6.5%, indicating whether the atmosphere was directly affected by MnO or not 2 The ESR value of the material resistance and tantalum capacitor does not have atom penetration into MnO when no atmosphere is filled 2 The ESR of the tantalum capacitor is not reduced because oxygen vacancies cannot be formed; for the 10V470 μf gauge H-shell product, the measured average ESR was reduced by 24.3% in the product of example 2 subjected to the atmospheric heat treatment; for the 6.3V680 μF H-shell product, the average ESR measured in the product of example 3 subjected to the atmospheric heat treatment was reduced by 21.4%; for the 35V22 uf gauge E-shell product, the average ESR measured in the example 4 product subjected to the atmospheric heat treatment was reduced by 21.8%.
In summary, based on the conventional manufacturing process, the equivalent series resistance of the solid electrolyte tantalum capacitor is reduced by at least 21.4%, so that the usability of the tantalum capacitor in an actual circuit is improved.
Claims (3)
1. A heat treatment method for reducing equivalent series resistance of a solid electrolyte tantalum capacitor is characterized by comprising the following steps: forming dielectric oxide film, mnO 2 Placing the anode tantalum block of the layer into a heat treatment furnace, closing a furnace door, vacuumizing a furnace chamber, filling atmosphere into the furnace chamber, performing heat treatment through a heating stage and a constant temperature stage, and cooling the tantalum block to room temperature along with the furnace after the constant temperature is finished.
2. The heat treatment method for reducing the equivalent series resistance of a solid electrolyte tantalum capacitor according to claim 1, wherein the atmosphere is any one gas or a mixture of two or more gases selected from the group consisting of nitrogen, ammonia, argon, helium, neon, krypton, xenon, radon and sulfur vapor.
3. The heat treatment method for reducing the equivalent series resistance of a solid electrolyte tantalum capacitor according to claim 1, wherein the temperature rise stage is to 200-400 ℃ at a temperature rise rate of 1-20 ℃/min; the constant temperature stage is to keep at 200-400 ℃ for 1-3 h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310901965.7A CN116844869A (en) | 2023-07-21 | 2023-07-21 | Heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310901965.7A CN116844869A (en) | 2023-07-21 | 2023-07-21 | Heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116844869A true CN116844869A (en) | 2023-10-03 |
Family
ID=88161617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310901965.7A Pending CN116844869A (en) | 2023-07-21 | 2023-07-21 | Heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116844869A (en) |
-
2023
- 2023-07-21 CN CN202310901965.7A patent/CN116844869A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1337371B1 (en) | Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates | |
| EP2508475A1 (en) | Nitrogen-containing porous carbon material, method for producing same, and electric double layer capacitor using the nitrogen-containing porous carbon material | |
| CN100472680C (en) | Method for preparing solid electrolytic capacitor cathode | |
| EP1275125B1 (en) | Niobium sintered body, production method therefor, and capacitor using the same | |
| CN102800480B (en) | A kind of preparation method for cathode of Nb capacitor | |
| EP0166205B1 (en) | Method of producing electrolytic capacitor with al-ti anode body | |
| CN112992548A (en) | Method for improving stress resistance of chip solid electrolyte capacitor | |
| CN112038093A (en) | Tantalum capacitor solid electrolyte and preparation method thereof, tantalum capacitor and electrical appliance | |
| CN115188597A (en) | Preparation method of sintered anode material based on multi-particle size matching | |
| JPH0449773B2 (en) | ||
| KR20240124895A (en) | Method for producing tantalum powder for capacitors by reducing tantalum oxide with alkaline earth metal | |
| CN109300695B (en) | Cathode of low ESR tantalum electrolytic capacitor and preparation method thereof | |
| US4164455A (en) | Process of forming a solid tantalum capacitor | |
| US6214271B1 (en) | Thermal treatment process for valve metal nitride electrolytic capacitors having manganese oxide cathodes | |
| CN116844869A (en) | Heat treatment method for reducing equivalent series resistance of solid electrolyte tantalum capacitor | |
| EP3486338A1 (en) | Flaky microcapsule and method for preparing same | |
| CN114360911B (en) | Preparation method of chip solid electrolyte tantalum capacitor | |
| CN104495929B (en) | Niobium suboxide powder and process for producing the same | |
| JP4521849B2 (en) | Niobium powder for capacitor, sintered body using the niobium powder, and capacitor using the sintered body | |
| EP3139393A1 (en) | Method for manufacturing tungsten-based capacitor element | |
| JP5613861B2 (en) | Solid electrolytic capacitor anode body | |
| CN103489656A (en) | Method for preparing solid electrolytic capacitor cathode | |
| CN115188593B (en) | Interface treatment method for manganese dioxide cathode layer of tantalum capacitor | |
| JP2004018966A (en) | Method for forming titanium oxide coating film and titanium electrolytic capacitor | |
| CN116206902A (en) | Manganese dioxide cathode of welding-resistant tantalum electrolytic capacitor, capacitor and preparation method of manganese dioxide cathode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |