CN116835519A - Optical window, manufacturing method thereof and infrared detector - Google Patents
Optical window, manufacturing method thereof and infrared detector Download PDFInfo
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- CN116835519A CN116835519A CN202310791558.5A CN202310791558A CN116835519A CN 116835519 A CN116835519 A CN 116835519A CN 202310791558 A CN202310791558 A CN 202310791558A CN 116835519 A CN116835519 A CN 116835519A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 230000003667 anti-reflective effect Effects 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000005253 cladding Methods 0.000 abstract description 2
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- 239000010410 layer Substances 0.000 description 85
- 238000002834 transmittance Methods 0.000 description 27
- 230000000694 effects Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0022—Protection against electrostatic discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00317—Packaging optical devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The application provides an optical window, a manufacturing method thereof and an infrared detector. The light window comprises a light window substrate, a plurality of anti-reflection microstructures and a film layer structure. The light window substrate has a first surface. The anti-reflection microstructure is convexly arranged on the first surface of the light window substrate. The film layer structures are arranged on the first surface of the light window substrate and cover the anti-reflection microstructure. Above-mentioned light window is through forming anti-reflection micro-structure at the first surface of light window substrate to form the rete structure of cladding anti-reflection micro-structure on the first surface of light window substrate, thereby can improve the light transmissivity of light window well, be favorable to improving the detection precision of the infrared detector that has this kind of light window, the setting of rete structure simultaneously can also be right anti-reflection structure carries out fine protection.
Description
Technical Field
The application belongs to the technical field of MEMS devices, and particularly relates to an optical window, a manufacturing method thereof and an infrared detector.
Background
With the development of technology, infrared detectors are widely applied to the technical fields of automobiles, electric power, aviation, thermal imaging and the like. Infrared detectors are typically provided with a window for light to enter the interior. The light transmittance of the window directly affects the detection accuracy of the infrared detector.
Disclosure of Invention
According to a first aspect of an embodiment of the present application, there is provided an optical window, including:
a light window substrate having a first surface;
the anti-reflection microstructures are arranged on the first surface of the light window substrate in a protruding mode;
the antireflection film layer is arranged on the first surface of the light window substrate and coats the antireflection microstructure.
In some embodiments, the film structure is an anti-reflection film.
In some embodiments, the surface of the anti-reflection film layer facing away from the first surface is a smooth plane.
In some embodiments, the optical window is configured to transmit light in a predetermined wavelength range, and the distance between adjacent anti-reflection microstructures is less than the smallest dimension of the wavelengths of light in the predetermined wavelength range.
In some embodiments, the height of the antireflective microstructures is 0.1 μm to 8 μm; and/or the number of the groups of groups,
the distance between adjacent anti-reflection microstructures is 0.1-6 μm; and/or the number of the groups of groups,
the radial dimension of the cross section of the anti-reflection microstructure is 0.1-8 mu m; and/or the number of the groups of groups,
the antireflection film layer comprises a first part and a second part, wherein the first part is positioned between adjacent antireflection microstructures, the second part is positioned at one side of the antireflection microstructures, which is away from the light window substrate, and the thickness of the second part is 0.1-5 mu m; and/or the number of the groups of groups,
the anti-reflection film layer is made of ZnS, ybF3 or BaF2.
In some embodiments, the film structure is an antistatic film layer having a dielectric constant less than a dielectric constant of the optical window substrate.
In some embodiments, the height of the antireflective microstructures is 0.1 μm to 8 μm; and/or the number of the groups of groups,
the distance between adjacent anti-reflection microstructures is 0.1-6 μm; and/or the number of the groups of groups,
the radial dimension of the cross section of the anti-reflection microstructure is 0.1-8 mu m; and/or the number of the groups of groups,
the thickness of the antistatic film layer is 0.1-5 mu m; and/or the number of the groups of groups,
the antistatic film layer is made of SiO2 or Al2O3.
In some embodiments, the antireflective microstructure is columnar; and/or the number of the groups of groups,
the cross section of the anti-reflection microstructure is at least one of rectangle, circle, triangle and hexagon.
In some embodiments, the light window comprises a light window body and a welding area located at the periphery of the light window body, the first surface of the light window body is provided with the anti-reflection microstructure and the film layer structure, and the first surface of the welding area is exposed
According to a second aspect of an embodiment of the present application, there is provided an infrared detector comprising a detector substrate, a MEMS device and an optical window as described above; the optical window and the detector substrate enclose a sealed accommodating cavity, and the MEMS device is arranged in the accommodating cavity.
In some embodiments, the membrane layer structure is an antistatic membrane layer, which is disposed towards a side of the accommodation cavity.
According to a third aspect of an embodiment of the present application, there is provided a method for manufacturing an optical window, including:
forming a light window substrate provided with a plurality of anti-reflection microstructures, wherein the light window substrate is provided with a first surface, and the anti-reflection microstructures are convexly arranged on the first surface of the light window substrate and are distributed at intervals;
and forming a film layer structure, wherein the film layer structure is arranged on the first surface of the light window substrate and coats the anti-reflection microstructure.
In some embodiments, the forming a light window substrate provided with a plurality of antireflective microstructures comprises:
providing a substrate body;
etching one side of the substrate body to form a light window substrate with a first surface and a plurality of anti-reflection microstructures which are arranged on the first surface of the light window substrate at intervals.
In some embodiments, the film structure is an antireflection film, and a surface of the antireflection film facing away from the first surface is a smooth plane.
In some embodiments, the forming the film structure includes:
forming an anti-reflection material layer on one side of the first surface of the light window substrate;
and (3) adopting a chemical mechanical polishing process to treat one side of the anti-reflection material layer away from the first surface to form a smooth plane.
In some embodiments, the optical window is configured to transmit light in a predetermined wavelength range, and the distance between adjacent anti-reflection microstructures is less than the smallest dimension of the wavelengths of light in the predetermined wavelength range.
In some embodiments, the height of the antireflective microstructures is 0.1 μm to 8 μm; and/or the number of the groups of groups,
the distance between adjacent anti-reflection microstructures is 0.1-6 μm; and/or the number of the groups of groups,
the radial dimension of the cross section of the anti-reflection microstructure is 0.1-8 mu m; and/or the number of the groups of groups,
the thickness of the antireflection film layer is 0.1-5 mu m; and/or the number of the groups of groups,
the anti-reflection film layer is made of ZnS, ybF3 or BaF2.
In some embodiments, the film structure is an antistatic film layer having a dielectric constant less than a dielectric constant of the optical window substrate.
In some embodiments, the height of the antireflective microstructures is 0.1 μm to 8 μm; and/or the number of the groups of groups,
the distance between adjacent anti-reflection microstructures is 0.1-6 μm; and/or the number of the groups of groups,
the radial dimension of the cross section of the anti-reflection microstructure is 0.1-8 mu m; and/or the number of the groups of groups,
the thickness of the antistatic film layer is 0.1-5 mu m; and/or the number of the groups of groups,
the antistatic film layer is made of SiO2 or Al2O3.
In some embodiments, the antireflective microstructure is columnar; and/or the number of the groups of groups,
the cross section of the anti-reflection microstructure is at least one of rectangle, circle, triangle and hexagon.
Based on the technical scheme, the optical window is provided with the anti-reflection microstructure on the first surface of the optical window substrate, and the film layer structure wrapping the anti-reflection microstructure is formed on the first surface of the optical window substrate, so that the light transmittance of the optical window can be well improved, the detection precision of the infrared detector with the optical window is favorably improved, and meanwhile, the anti-reflection structure can be well protected.
Drawings
FIG. 1 is a cross-sectional view of an infrared detector according to an embodiment of the present application;
FIG. 2 is a cross-sectional view of an optical window according to an embodiment of the present application;
FIG. 3 is a block diagram of a light window and a light window substrate with an anti-reflection microstructure according to an embodiment of the present application;
FIG. 4 is a partially enlarged view of a light window substrate with an anti-reflection microstructure according to an embodiment of the present application;
FIG. 5 is a graph showing light transmittance of a light window according to an embodiment of the present application;
FIG. 6 is a cross-sectional view of another infrared detector provided in an embodiment of the present application;
FIG. 7 is a cross-sectional view of another optical window according to an embodiment of the present application;
FIG. 8 is a cross-sectional view of yet another optical window provided by an embodiment of the present application;
FIG. 9 is a flow chart of a manufacturing process of an optical window according to an embodiment of the present application;
fig. 10 to 13 are process diagrams of a light window according to an embodiment of the application;
FIG. 14 is a schematic view of another embodiment of a manufacturing process of an optical window according to the present application;
FIG. 15 is a schematic view of another embodiment of a manufacturing process of a light window according to the present application;
fig. 16 is a cross-sectional view of the light window and solder combination of fig. 15.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The patent refers to the field of 'optical elements, systems, or AN_SNparatus'. The light window comprises a light window substrate, a plurality of anti-reflection microstructures and a film layer structure. The light window substrate has a first surface. The anti-reflection microstructures are arranged on the first surface of the light window substrate in a protruding mode at intervals. The film layer structure is arranged on the first surface of the light window substrate and coats the anti-reflection microstructure. Above-mentioned light window forms the anti-reflection micro-structure through the first surface at the light window basement to form cladding anti-reflection micro-structure's anti-reflection rete on light window basement first surface, thereby can improve the light transmissivity of light window well, be favorable to improving the detection precision that has infrared detector of this kind of light window, the setting of rete structure simultaneously can also be right the anti-reflection micro-structure carries out fine protection, avoids anti-reflection micro-structure wearing and tearing, and make light window be equipped with the one side surface cleanable of anti-reflection micro-structure, avoid foreign matter such as light window surface dust to imaging effect.
The optical window, the method of manufacturing the same, and the infrared detector are described in detail below with reference to fig. 1 to 16.
Referring to fig. 1, and in conjunction with fig. 2 to 5 when necessary, fig. 1 shows an infrared detector 100 according to the present application, where the infrared detector 100 includes a detector substrate 20, a MEMS device 30, and an optical window 10. The optical window 10 and the detector substrate 20 may be connected by solder 40 and enclose a sealed accommodating cavity 101, and the MEMS device 30 is disposed in the accommodating cavity 101. The MEMS device 30 may be disposed over the detector substrate 20.
The infrared detector 100 may be used for detecting gases, such as ethanol, ethylene, ammonia, and the like. The infrared detector 100 may be used to detect one or more gases.
When the infrared detector 100 detects the gas in the environment, the light entering the infrared detector 100 after passing through the gas is different based on different gas spectrum absorption peaks (such as an ethanol absorption peak wavelength of 9.5um, an ammonia absorption peak wavelength of 10.3um and an ethylene absorption peak wavelength of 11.2 um), so that the light passing through the gas can be detected by an internal MEMS device, and the detected specific gas is determined. By adjusting the light transmittance of the specific wavelength band of the optical window 10, the detection accuracy of the infrared detector 100 for detecting the specific wavelength gas can be improved better.
Referring to fig. 2 to 4, in order to improve the light transmittance of the light window 10, the light window 10 is configured to include a light window substrate 11, a plurality of anti-reflection microstructures 12 and a film layer structure 13. The film layer structure may include an antireflection film layer 131, where the antireflection film layer 131 can further increase the light transmittance while protecting the antireflection microstructure 12. The anti-reflection film layer 131 may select a specific material according to a wavelength band of light to be transmitted and set a corresponding thickness to increase transmittance of light to be transmitted.
The light window substrate 11 has a first surface S1. The plurality of anti-reflection microstructures 12 are convexly arranged on the first surface S1 of the optical window substrate 11, and are arranged at intervals. The anti-reflection film 131 is disposed on the first surface S1 of the optical window substrate 11 and encapsulates the anti-reflection microstructure 12.
In some embodiments, the plurality of anti-reflective microstructures 12 are arranged in an array on the first surface S1. The array arrangement can be arranged in a mode of uniformly spacing rows and columns.
The light window substrate 11 and the anti-reflection microstructure 12 may be a unitary structure formed by etching the same wafer. The material of the optical window substrate 11 and the anti-reflection microstructure 12 may be silicon (Si) or germanium (Ge). Of course, in other embodiments, other materials are also possible.
Of course, the light window substrate 11 and the anti-reflection microstructure 12 may also be formed by growing another anti-reflection film layer on the first surface S1 of the light window substrate 11, and etching the anti-reflection film layer to form the anti-reflection microstructure 12 on the first surface S1 of the light window substrate 11. In this method, the materials of the light window substrate 11 and the anti-reflection microstructure 12 may be different, for example, the material of the anti-reflection microstructure 12 may be a metal material such as metal gold (Au), or a non-metal material such as silicon nitride (SiN) or an inorganic material.
In some embodiments, the antireflective microstructure 12 is a relief structure formed by etching.
The plurality of anti-reflection microstructures 12 are respectively arranged at intervals, and a space 121 is arranged between every two adjacent anti-reflection microstructures 12. The first surface S1 may be exposed from the space 121.
In some embodiments, the anti-reflection film layer 131 includes a first portion 1301 located between adjacent anti-reflection microstructures 12 and a second portion 1302 located on a side of the anti-reflection microstructures 12 facing away from the light window substrate.
As shown in fig. 2 and 3, the first portion 1301 of the anti-reflection film 131 fills the space 121, and the second portion 1302 is located on the side of the anti-reflection microstructure 12 facing away from the light window substrate 11. The second portion 1302 covers the surface of the side of the anti-reflection microstructure 12 facing away from the light window substrate 11, and the first portion 1301 covers the sidewall surface of the anti-reflection microstructure 12.
The material of the antireflection film 131 may be a low refractive index material such as ZnS, ybF3, or BaF2. The particular material of the anti-reflection film 131 may be selected according to particular needs.
It will be appreciated that in other embodiments, the anti-reflection film layer may also comprise only a first portion between adjacent anti-reflection microstructures, the surface of the first portion facing away from the light window substrate 11 being flush with the surface of the anti-reflection microstructure facing away from the light window substrate. Correspondingly, the anti-reflection film layer coats the side wall surface of the anti-reflection microstructure.
It is understood that, when the optical window 10 is disposed in the infrared detector 100, the antireflection film 131 of the optical window 10 may be disposed toward the outside. In this way, the light window 10 is arranged, so that light passes through the antireflection film 131 of the light window 10 from the outside to obtain first antireflection, and the light generates transmission and reflection diffraction when passing through the antireflection microstructure 12 to further realize the effects of reducing reflection and increasing transmission, thereby better improving the light transmittance of the light window.
In some embodiments, the surface S2 of the antireflection film 131 facing away from the first surface S1 is a smooth plane, so that light reflection and the like caused by insufficient smoothness of the surface S2 of the antireflection film can be reduced or avoided, which is more beneficial to improving the light transmittance of the light window 10.
It will be appreciated that the shape of the anti-reflection microstructure 12, the size of the anti-reflection microstructure 12, the distance between adjacent anti-reflection microstructures 12, the type of material of the anti-reflection film layer 131, the thickness thereof, and the like may all have an effect on the light transmittance of the light window 10, and may be specifically set as required.
In some embodiments, the optical window 10 is configured to transmit light in a preset wavelength range, and the distance L between adjacent anti-reflection microstructures 12 is smaller than the minimum size of the wavelength of the light in the preset wavelength range, so that the light enters the structural layer where the anti-reflection microstructures 12 are located, so that higher transmittance can be achieved, and thus the transmittance of the optical window is improved well.
For example, as shown in connection with FIG. 4, in some embodiments, the light window 10 may be configured to transmit light having a predetermined wavelength range of 8 μm to 14 μm, with the distance L between adjacent anti-reflective microstructures 12 being less than 8 μm. For another example, in some embodiments, the distance between adjacent anti-reflection microstructures 12 is 0.1 μm-6 μm, which can better achieve the anti-reflection effect, and thus better improve the transmittance of the light window.
In some embodiments, the height of the antireflective microstructures 12 is 0.1 μm to 8 μm.
In some embodiments, the antireflective microstructure 12 has a cross-section with a radial dimension of 0.1 μm to 8 μm.
In some embodiments, the second portion 1302 of the anti-reflective coating layer 131 has a thickness of 0.1 μm to 5 μm.
Specifically, the distance between adjacent anti-reflection microstructures 12, the height, cross-sectional dimension, material and thickness of the anti-reflection film layer 131, etc. of the anti-reflection microstructures 12 may be set according to specific needs.
Referring to fig. 5, for example, as the material ZnS of the anti-reflection film 131, the transmittance of the light window with no anti-reflection microstructure is lower than 60% and the transmittance of the light window with anti-reflection microstructure is more than 70% and most of the light windows are more than 85% for the light with wavelength range of 8 μm-14 μm. It can be seen that the transmittance of the light window 10 with the anti-reflection microstructure is significantly greater than the transmittance of the light window without the anti-reflection microstructure. The thickness of the antireflection film 131 is different due to the antireflection microstructure, and the transmittance of the light corresponding to the optical window is also different, so that the thickness of the antireflection film 131 having a better transmittance in the wavelength range can be set according to the wavelength range of the light that needs to be transmitted for a specific window.
It is understood that the anti-reflection microstructure 12 of the present application may be a columnar structure such as a cylinder, a cube column, or other columnar structure having a convex shape as shown in fig. 2 to 4. In other embodiments, other shapes of regular or irregular raised structures are also possible.
Accordingly, in some embodiments, the antireflective microstructure 12 has a cross-sectional shape that is at least one of rectangular, circular, triangular, and hexagonal.
For example, as shown in connection with FIG. 4, the cross-section of the anti-reflection microstructure 12 is circular in shape. The columnar anti-reflection microstructure 12 with the circular cross section can better realize the anti-reflection effect.
In addition, the cross-sectional shape of the antireflective microstructure may be other regular or irregular shapes.
Referring to fig. 6-8, another infrared detector 200 is provided in accordance with the present application. The infrared detector 200 includes a detector substrate 20, a MEMS device 30, and an optical window 50. The optical window 50 and the detector substrate 20 may be connected by solder 40 and enclose a sealed accommodating cavity 101, and the MEMS device 30 is disposed in the accommodating cavity 101. The MEMS device 30 may be disposed over the detector substrate 20. Most of the structures of the infrared detector 200 are the same as the corresponding structures in the above-described infrared detector 200, and reference is made to the above-described related description.
In contrast, here the film structure 13 in the optical window 50 is an antistatic film 132. And the surface of one side of the film layer structure 13 facing away from the light window substrate 11 is in a wavy shape along with the anti-reflection microstructure 12. And the antistatic film layer 132 of the optical window 50 is disposed toward the accommodating cavity 101.
The film layer structure 13 is an antistatic film layer 132, so that the antistatic film layer 132 can further reduce static accumulation on the surface of the optical window and improve the antistatic capability of the infrared detector 200 while protecting the anti-reflection microstructure 12.
It is understood that the dielectric constant of the antistatic film layer 132 is smaller than that of the optical window substrate 11.
For example, the antistatic film 132 may be formed of SiO2 or Al2O3 with a relatively low dielectric constant.
The antistatic film layer formed by adopting the material can also set the thickness of the antistatic film layer according to the wavelength and other conditions of light rays needing to be transmitted, so that the antistatic film layer can play a role in preventing light transmittance from being influenced and even playing an anti-reflection role.
As shown in connection with fig. 7 and 8, in some embodiments, the height H1 of the anti-reflection microstructure 12 may be set to a height value in the range of 0.1 μm to 8 μm as desired.
Continuing to refer to FIGS. 7 and 8, in some embodiments, the distance L1 between adjacent anti-reflective microstructures 12 is 0.1 μm to 6 μm.
With continued reference to fig. 7 and 8, in some embodiments, the cross-section of the anti-reflective microstructure 12 has a radial dimension of 0.1 μm to 8 μm.
Continuing to refer to fig. 7 and 8, in some embodiments, the anti-reflection microstructure 12 is columnar.
In some embodiments, the antireflective microstructure 12 has a cross-sectional shape that is at least one of rectangular, circular, triangular, and hexagonal.
The light window substrate 11 and the anti-reflection microstructure 12 in the light window 50 are the same as the specific structure, material, size, etc. of the light window substrate and the anti-reflection microstructure 12 in the light window 10, and reference is made to the above description.
With continued reference to fig. 7 and 8, in some embodiments, the antistatic film layer 132 has a thickness D2 of 0.1 μm to 5 μm. The antistatic film layer 132 is located at the exposed first surface S1 of the light window substrate 11, and has the same thickness as that of the portion covering the top of the anti-reflection microstructure 12. Of course, in other embodiments, the differences may also be different.
In some embodiments, as shown in fig. 7, the optical window 51 includes an optical window body 1001 and a welding area 1002 located at the periphery of the optical window body 1001, and the first surface S1 of the optical window body 1001 is provided with the anti-reflection microstructure 12 and the antistatic film layer 132. The first surface S1 of the soldering region 1002 is exposed to enable better soldering with the solder 40.
It will be appreciated that the front projection of MEMS device 30 over the thickness T of infrared detector 200 is within the front projection of optical window body 1001 over the thickness T of infrared detector 200.
Of course, as shown in fig. 8, in other embodiments, the optical window 50 may be an optical window 51 where the first surface S1 of the welding region 1002 is not exposed. The solder areas 1002 are correspondingly coated with an antistatic film layer 132.
It will be appreciated that the first surface S1 of the optical window 10 faces the accommodating cavity 101, and the manner of not providing the anti-reflection microstructure and the film layer structure in the welding area may be adopted.
In addition, it should be understood that in other embodiments, the film structure may be other film layers with protective effects that do not affect or have little effect on the light transmission of the light window.
Referring to fig. 9, and referring to fig. 10 to 13 and fig. 2 to 4 when necessary, the present application further provides a method for manufacturing an optical window 10, which includes steps S101 to S103 as follows:
in step S101, forming a light window substrate provided with a plurality of anti-reflection microstructures, wherein the light window substrate has a first surface, and the plurality of anti-reflection microstructures are arranged on the first surface of the light window substrate in a protruding mode at intervals;
in step S103, a film structure is formed, where the film structure is disposed on the first surface of the optical window substrate and encapsulates the anti-reflection microstructure.
In some embodiments, the optical window substrate 11 and the anti-reflective microstructure 12 are one unitary structure formed by etching the same wafer. The material of the optical window substrate 11 and the anti-reflection microstructure 12 may be silicon (Si) or germanium (Ge). Of course, in other embodiments, other materials are also possible.
Accordingly, forming the optical window substrate provided with a plurality of anti-reflection microstructures in step S101 may include the following steps S1011 and S1013:
in step S1011, a substrate body is provided;
in step S1013, etching is performed on one side of the substrate body to form a light window substrate having a first surface and a plurality of anti-reflection microstructures disposed on the first surface of the light window substrate and arranged at intervals. In step S1011, the substrate body 110 is provided.
In some embodiments, the substrate body 110 may be a wafer, such as a silicon (Si) or germanium (Ge) wafer.
Referring to fig. 11, in step S1013, one side of the substrate body 110 is etched, so as to form a light window substrate 11 having a first surface S1 and a plurality of anti-reflection microstructures 12 disposed on the first surface S1 of the light window substrate 11 and arranged at intervals, where the anti-reflection microstructures 12 are columnar.
The antireflective microstructures 12 may be formed here by dry etching.
In other embodiments, the light window substrate 11 and the anti-reflection microstructure 12 are formed by growing another film layer on the first surface S1 of the light window substrate 11, and etching the film layer to form the anti-reflection microstructure 12 on the first surface S1 of the light window substrate 11. In this method, the materials of the light window substrate 11 and the anti-reflection microstructure 12 may be different, for example, the material of the anti-reflection microstructure 12 may be a metal material such as metal gold (Au), or a non-metal material such as silicon nitride (SiN) or an inorganic material.
It can be understood that, for the structure formed by one layer of light window substrate and another film layer grown on the light window substrate, the light window substrate can be directly provided, another antireflection film layer for forming an antireflection microstructure is grown on the light window substrate, and the grown antireflection film layer is etched, so that the antireflection microstructures distributed at intervals are formed. That is, forming the optical window substrate provided with a plurality of anti-reflection microstructures in step S101 may include the following steps S1015 and S1017:
in step S1015, a light window substrate having a first surface is provided;
in step S1017, an antireflection film layer for forming an antireflection microstructure is grown on the first surface of the optical window substrate, and the grown antireflection film layer is etched to form the antireflection microstructures arranged at intervals.
The optical window substrate may be a wafer.
In step S103, a film layer structure 13 is formed, where the film layer structure 13 is disposed on the first surface S1 of the light window substrate 11, and partially encapsulates the plurality of anti-reflection microstructures 12.
In some embodiments, the anti-reflection film layer 131 includes a first portion 1301 located between adjacent anti-reflection microstructures 12 and a second portion 1302 located on a side of the anti-reflection microstructures 12 facing away from the light window substrate.
The material of the antireflection film 131 may be a low refractive index material such as ZnS, ybF3, or BaF2. The particular material of the anti-reflection film 131 may be selected according to particular needs.
It will be appreciated that in other embodiments, the anti-reflection film layer may also comprise only a first portion between adjacent anti-reflection microstructures, the surface of the first portion facing away from the light window substrate 11 being flush with the surface of the anti-reflection microstructure facing away from the light window substrate. Correspondingly, the anti-reflection film layer coats the side wall surface of the anti-reflection microstructure.
Referring to fig. 13, in some embodiments, the surface of the anti-reflection film 131 facing away from the first surface S1 is a smooth plane, so that light reflection and the like caused by insufficient smoothness of the surface S2 of the anti-reflection film can be reduced or avoided, which is more beneficial to improving the light transmittance of the light window 10.
Accordingly, in some embodiments, the forming the anti-reflection film layer in step S103 may specifically include the following steps S1031 and S1032:
in step S1031, an anti-reflection material layer is formed on the side of the first surface of the optical window substrate.
In step S1032, a chemical mechanical polishing process is used to treat a side of the anti-reflection material layer facing away from the first surface to form a smooth plane.
For example, referring to fig. 12 and 13, in step S1031, an anti-reflection material layer 130 is formed on the side of the first surface S1 of the optical window substrate 11. The layer of antireflective material 130 can fill in the spaces 121 of adjacent antireflective microstructures 12 and coat the side of the antireflective microstructures 12 facing away from the light window substrate 11.
In step S1032, a chemical mechanical polishing process is used to process a side of the anti-reflection material layer 130 facing away from the first surface S1 to form a smooth plane S2.
It will be appreciated that the shape of the anti-reflection microstructure 12, the size of the anti-reflection microstructure 12, the distance between adjacent anti-reflection microstructures 12, the type of material of the anti-reflection film layer 131, the thickness thereof, and the like may all have an effect on the light transmittance of the light window 10, and may be specifically set as required to set the shape of the anti-reflection microstructure 12 to a preset shape, the anti-reflection microstructure 12 to a preset size, the distance between adjacent anti-reflection microstructures 12 to a preset distance, the anti-reflection film layer 131 to a preset material, and to have a preset thickness so as to satisfy the light transmittance of a specific light wavelength range.
In some embodiments, the optical window 10 is configured to transmit light in a preset wavelength range, and the distance L between adjacent anti-reflection microstructures 12 is smaller than the minimum size of the wavelength of light in the preset wavelength range, so that the light enters the structural layer where the anti-reflection microstructures 12 are located, and only zero-order transmission and reflection diffraction are generated, which can achieve better anti-reflection and anti-reflection effects, thereby better improving the transmittance of the optical window.
For example, as shown in connection with FIG. 4, in some embodiments, the light window 10 may be configured to transmit light having a predetermined wavelength range of 8 μm to 14 μm, with the distance L between adjacent anti-reflective microstructures 12 being less than 8 μm. For another example, in some embodiments, the distance between adjacent anti-reflection microstructures 12 is 0.1 μm-6 μm, which can better achieve the anti-reflection effect, and thus better improve the transmittance of the light window.
In some embodiments, the height of the antireflective microstructures 12 is 0.1 μm to 8 μm.
In some embodiments, the antireflective microstructure 12 has a cross-section with a radial dimension of 0.1 μm to 8 μm.
In some embodiments, the second portion 1302 of the anti-reflective coating layer 131 has a thickness of 0.1 μm to 5 μm.
It is understood that the anti-reflection microstructure 12 of the present application may be a columnar structure such as a cylinder, a cube column, or other columnar structure having a convex shape as shown in fig. 2 to 4. In other embodiments, other shapes of regular or irregular raised structures are also possible.
Accordingly, in some embodiments, the antireflective microstructure 12 has a cross-sectional shape that is at least one of rectangular, circular, triangular, and hexagonal.
For example, as shown in connection with FIG. 4, the cross-section of the anti-reflection microstructure 12 is circular in shape. The columnar anti-reflection microstructure 12 with the circular cross section can better realize the anti-reflection effect.
In addition, the cross-sectional shape of the antireflective microstructure may be other regular or irregular shapes.
Based on the above technical solution, in the formed optical window 10, the anti-reflection microstructure 12 is formed on the optical window substrate 11 side, and the anti-reflection film layer 131 covering the anti-reflection microstructure 12 is formed on the first surface S1 side of the optical window substrate 11, so that the light transmittance of the optical window 10 for a specific light wave range can be well improved.
As shown in fig. 9, 14 to 16, and as necessary in fig. 10 and 11, the optical window 50 in the infrared detector 200 is prepared in the same manner as the optical window 10, and the same points are referred to in the related description. For example, in step S101, a light window substrate provided with a plurality of anti-reflection microstructures is formed, the light window substrate has a first surface, and the plurality of anti-reflection microstructures are protruded on the first surface of the light window substrate at intervals. The specific method and corresponding structure of this step S101 are the same as those of step S101 in the above-described preparation method of the optical window 10, and reference is made to the above description.
In contrast, in forming the film structure 13 in step S103, an antistatic film layer material is used in this embodiment, and an antistatic film layer 132 is formed (please refer to fig. 14). Further, the polishing process is not required.
The antistatic film layer 132 may be formed by deposition.
The antistatic film layer 132 can further reduce static accumulation on the surface of the optical window while protecting the anti-reflection microstructure 12, and improve the antistatic capability of the infrared detector 200.
It is understood that the dielectric constant of the antistatic film layer 132 is smaller than that of the optical window substrate 11.
For example, the antistatic film 132 may be formed of SiO2 or Al2O3 with a relatively low dielectric constant.
The antistatic film layer formed by adopting the material can also set the thickness of the antistatic film layer according to the wavelength and other conditions of light rays needing to be transmitted, so that the antistatic film layer can play a role in preventing light transmittance from being influenced and even playing an anti-reflection role.
Note that, for the optical window including the optical window body 1001 and the welding area 1002 located at the periphery of the optical window body 1001, the first surface S1 of the optical window body 1001 is provided with the anti-reflection microstructure 12 and the antistatic film layer 132. As shown in fig. 14 and 15, after forming the optical window 52 shown in fig. 14, the antistatic film layer at the bonding region 1002 may be removed to form the optical window 51 shown in fig. 15.
In addition, as shown in fig. 16, after the optical window 51 shown in fig. 15 is prepared, solder may be provided at the soldering region 1002 for subsequent soldering with the probe substrate 20. In the present application, the structural embodiments and the method embodiments may complement each other without collision.
Those skilled in the art will appreciate that the drawing is merely a schematic representation of one preferred embodiment and that the modules or processes in the drawing are not necessarily required to practice the application. The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily appreciate variations or alternatives within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (20)
1. An optical window, comprising:
a light window substrate having a first surface;
the anti-reflection microstructures are arranged on the first surface of the light window substrate in a protruding mode at intervals;
and the film layer structure is arranged on the first surface of the light window substrate and coats the anti-reflection microstructure.
2. A light window according to claim 1, wherein the film structure is an anti-reflection film.
3. The light window of claim 2, wherein a surface of the anti-reflection film layer facing away from the first surface is a smooth planar surface.
4. The light window of claim 2, wherein the light window is configured to transmit light in a predetermined wavelength range, and wherein a distance between adjacent anti-reflection microstructures is less than a minimum dimension of a wavelength of light in the predetermined wavelength range.
5. The light window of claim 2, wherein the height of the antireflective microstructure is 0.1 μm to 8 μm; and/or the number of the groups of groups,
the distance between adjacent anti-reflection microstructures is 0.1-6 μm; and/or the number of the groups of groups,
the radial dimension of the cross section of the anti-reflection microstructure is 0.1-8 mu m; and/or the number of the groups of groups,
the antireflection film layer comprises a first part and a second part, wherein the first part is positioned between adjacent antireflection microstructures, the second part is positioned at one side of the antireflection microstructures, which is away from the light window substrate, and the thickness of the second part is 0.1-5 mu m; and/or the number of the groups of groups,
the anti-reflection film layer is made of ZnS, ybF3 or BaF2.
6. The light window of claim 1, wherein the film structure is an antistatic film layer having a dielectric constant less than a dielectric constant of the light window substrate.
7. The light window of claim 6, wherein the height of the antireflective microstructure is 0.1 μm to 8 μm; and/or the number of the groups of groups,
the distance between adjacent anti-reflection microstructures is 0.1-6 μm; and/or the number of the groups of groups,
the radial dimension of the cross section of the anti-reflection microstructure is 0.1-8 mu m; and/or the number of the groups of groups,
the thickness of the antistatic film layer is 0.1-5 mu m; and/or the number of the groups of groups,
the antistatic film layer is made of SiO2 or Al2O3.
8. The light window of claim 1, wherein the antireflective microstructure is columnar; and/or the number of the groups of groups,
the cross section of the anti-reflection microstructure is at least one of rectangle, circle, triangle and hexagon.
9. The light window of claim 1, wherein the light window comprises a light window body and a welded area at the periphery of the light window body, wherein the first surface of the light window body is provided with the anti-reflection microstructure and the film structure, and the first surface of the welded area is exposed.
10. An infrared detector comprising a detector substrate, a MEMS device and an optical window according to any one of claims 1 to 9; the optical window and the detector substrate enclose a sealed accommodating cavity, and the MEMS device is arranged in the accommodating cavity.
11. The infrared detector as set forth in claim 10, wherein said film structure is an antistatic film layer disposed toward a side of said receiving cavity.
12. A method of manufacturing an optical window, comprising:
forming a light window substrate provided with a plurality of anti-reflection microstructures, wherein the light window substrate is provided with a first surface, and the anti-reflection microstructures are convexly arranged on the first surface of the light window substrate and are distributed at intervals;
and forming a film layer structure, wherein the film layer structure is arranged on the first surface of the light window substrate and coats the anti-reflection microstructure.
13. The method of manufacturing an optical window of claim 12, wherein forming an optical window substrate provided with a plurality of anti-reflection microstructures comprises:
providing a substrate body;
etching one side of the substrate body to form a light window substrate with a first surface and a plurality of anti-reflection microstructures which are arranged on the first surface of the light window substrate at intervals.
14. The method of manufacturing a light window according to claim 12, wherein the film structure is an antireflection film, and a surface of the antireflection film facing away from the first surface is a smooth plane.
15. The method of manufacturing a light window according to claim 14, wherein forming the film structure comprises:
forming an anti-reflection material layer on one side of the first surface of the light window substrate;
and (3) adopting a chemical mechanical polishing process to treat one side of the anti-reflection material layer away from the first surface to form a smooth plane.
16. The method of manufacturing an optical window according to claim 12, wherein the optical window is configured to transmit light in a predetermined wavelength range, and a distance between adjacent anti-reflection microstructures is smaller than a minimum dimension of wavelengths of light in the predetermined wavelength range.
17. The method of manufacturing an optical window according to claim 14, wherein the height of the antireflective microstructure is 0.1 μm to 8 μm; and/or the number of the groups of groups,
the distance between adjacent anti-reflection microstructures is 0.1-6 μm; and/or the number of the groups of groups,
the radial dimension of the cross section of the anti-reflection microstructure is 0.1-8 mu m; and/or the number of the groups of groups,
the film layer structure is an antireflection film layer, the antireflection film layer comprises a first part positioned between adjacent antireflection microstructures and a second part positioned at one side of the antireflection microstructures away from the light window substrate, and the thickness of the second part is 0.1-5 mu m; and/or the number of the groups of groups,
the anti-reflection film layer is made of ZnS, ybF3 or BaF2.
18. The light window of claim 12, wherein the film structure is an antistatic film layer having a dielectric constant less than a dielectric constant of the light window substrate.
19. The light window of claim 18, wherein the height of the antireflective microstructure is 0.1 μm to 8 μm; and/or the number of the groups of groups,
the distance between adjacent anti-reflection microstructures is 0.1-6 μm; and/or the number of the groups of groups,
the radial dimension of the cross section of the anti-reflection microstructure is 0.1-8 mu m; and/or the number of the groups of groups,
the thickness of the antistatic film layer is 0.1-5 mu m; and/or the number of the groups of groups,
the antistatic film layer is made of SiO2 or Al2O3.
20. The method of manufacturing an optical window of claim 12, wherein the antireflective microstructure is columnar; and/or the number of the groups of groups,
the cross section of the anti-reflection microstructure is at least one of rectangle, circle, triangle and hexagon.
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| CN202310791558.5A CN116835519A (en) | 2023-06-29 | 2023-06-29 | Optical window, manufacturing method thereof and infrared detector |
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