CN116826669B

CN116826669B - Device junction temperature protection method, device, equipment and storage medium

Info

Publication number: CN116826669B
Application number: CN202310611291.7A
Authority: CN
Inventors: 尹礼鹏; 赵振东; 李志鹏; 陈坤
Original assignee: Xi'an Topology Electric Power Technology Co ltd
Current assignee: Xi'an Topology Electric Power Technology Co ltd
Priority date: 2023-05-26
Filing date: 2023-05-26
Publication date: 2024-03-08
Anticipated expiration: 2043-05-26
Also published as: CN116826669A

Abstract

The application relates to a device junction temperature protection method, device, equipment and storage medium, wherein according to temperatures corresponding to a target device at a plurality of historical moments and temperatures of the target device at the current moment, heat information of the target device at the current moment is obtained, and if the heat information meets preset junction temperature protection conditions, junction temperature protection operation of the target device is executed. Wherein the thermal information includes the accumulated heat and the rate of change of heat of the target device. By adopting the method, the accuracy of junction temperature protection of the semiconductor device can be improved.

Description

Device junction temperature protection method, device, equipment and storage medium

Technical Field

The present disclosure relates to the field of semiconductor devices, and in particular, to a device junction temperature protection method, apparatus, device, and storage medium.

Background

With the development of semiconductor technology, the application of semiconductor devices is more and more. In the working state, the temperature of the semiconductor device is changed at any time, and junction temperature protection of the semiconductor device is required in time.

In the related art, when junction temperature protection is performed on a semiconductor device, a thermistor is often relied on to measure the temperature of the device, and if the temperature of the device exceeds a preset temperature threshold value, the semiconductor device is protected.

However, there is a delay between the measured device temperature and the actual temperature of the device in the related art, resulting in hysteresis and lower accuracy in junction temperature protection of the semiconductor device.

Disclosure of Invention

In view of the foregoing, it is desirable to provide a device junction temperature protection method, apparatus, device, and storage medium, which improve the accuracy of junction temperature protection of a semiconductor device.

In a first aspect, the present application provides a device junction temperature protection method, the method comprising:

acquiring heat information of the target device at the current moment according to temperatures corresponding to the target device at a plurality of historical moments and temperatures of the target device at the current moment; the thermal information includes accumulated heat and a rate of change of heat of the target device;

and if the heat information meets the preset junction temperature protection condition, performing junction temperature protection operation on the target device.

In one embodiment, obtaining the thermal information of the target device at the current moment according to the temperatures of the target device at the plurality of historical moments and the temperatures of the target device at the current moment includes:

constructing a temperature change curve of the target device according to the temperatures of the target device corresponding to a plurality of historical moments and the temperatures of the target device at the current moment;

And acquiring the heat information of the target device at the current moment according to the temperature change curve of the target device.

In one embodiment, obtaining the thermal information of the target device at the current moment according to the temperature change curve of the target device includes:

dividing a temperature change curve of a target device according to a preset time interval to obtain a plurality of continuous curve segments corresponding to the temperature change curve of the target device;

determining temperature change functions of each continuous curve segment according to the endpoint data of each continuous curve segment;

and acquiring the accumulated heat and the heat change rate of the target device at the current moment through the temperature change function of each continuous curve segment.

In one embodiment, the continuous curve segment includes a plurality of historical curve segments and a current curve segment, and the acquiring the accumulated heat and the heat change rate of the target device at the current moment through the temperature change function of each continuous curve segment includes:

determining the slope of the temperature change function of the current curve segment as the heat change rate of the target device at the current moment;

and acquiring the accumulated heat of the target device at the current moment according to the temperature change function of each historical curve segment and the temperature change function of the current curve segment.

In one embodiment, the accumulated heat includes an initial heat and a newly added heat, and the acquiring the accumulated heat of the target device at the current moment according to the temperature change function of each historical curve segment and the temperature change function of the current curve segment includes:

acquiring initial heat of the target device at the current moment according to a temperature change function of the initial curve segment and two endpoints corresponding to the initial curve segment; the initial curve segment is a curve segment corresponding to the earliest historical moment in each historical curve segment;

respectively obtaining integral results of temperature change functions of each curve segment in adjacent curve segments, and taking the difference value of the integral results of the temperature change functions of each curve segment in the adjacent curve segments as the newly increased heat of the next curve segment in the adjacent curve segments;

and taking the summation result of the initial heat and the newly added heat as the accumulated heat of the target device at the current moment.

In one embodiment, the junction temperature protection condition includes a preset heat peak value, and if the heat information meets the preset junction temperature protection condition, performing a junction temperature protection operation on the target device, including:

and if the accumulated heat of the target device is greater than or equal to the preset heat peak value, performing junction temperature protection operation on the target device.

In one embodiment, the junction temperature protection condition further includes a preset change rate threshold, and if the thermal information meets the preset junction temperature protection condition, performing a junction temperature protection operation on the target device, including:

if the heat change rate is greater than or equal to a preset change rate threshold, acquiring predicted accumulated heat of the target device at a future moment;

and if the predicted accumulated heat quantity is greater than or equal to the preset heat quantity peak value, performing junction temperature protection operation on the target device.

In one embodiment, if the thermal rate of change is greater than or equal to the preset rate of change threshold, obtaining the predicted accumulated thermal energy of the target device at the future time includes:

taking a temperature change function corresponding to the heat change rate as a predicted temperature change function of the target device;

obtaining predicted new heat increment of a target device in a time period corresponding to the current time and the future time according to the future time, the current time and the predicted temperature transformation function;

and superposing the predicted newly-increased heat quantity and the accumulated heat quantity of the target device to obtain the predicted accumulated heat quantity of the target device at the future moment.

In a second aspect, the present application further provides a junction temperature protection device for a device, the device comprising:

the information acquisition module is used for acquiring heat information of the target device at the current moment according to the temperatures of the target device at the plurality of historical moments and the temperatures of the target device at the current moment; the thermal information includes accumulated heat and a rate of change of heat of the target device;

And the junction temperature protection module is used for executing junction temperature protection operation on the target device if the heat information meets the preset junction temperature protection condition.

In a third aspect, the present application also provides a computer device. The computer device comprises a memory storing a computer program and a processor implementing the steps of the method in any of the embodiments of the first aspect described above when the computer program is executed.

In a fourth aspect, the present application also provides a computer-readable storage medium. The computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the method in any of the embodiments of the first aspect described above.

In a fifth aspect, the present application also provides a computer program product. The computer program product comprising a computer program which, when executed by a processor, implements the steps of the method in any of the embodiments of the first aspect described above.

According to the junction temperature protection method, the device, the equipment and the storage medium, according to the temperatures of the target device at a plurality of historical moments and the temperatures of the target device at the current moment, the heat information of the target device at the current moment is obtained, and if the heat information meets the preset junction temperature protection condition, junction temperature protection operation of the target device is executed. Wherein the thermal information includes the accumulated heat and the rate of change of heat of the target device. The method is based on the acquisition of the temperatures corresponding to a plurality of historical moments and the temperatures at the current moment, so that the accumulated heat and the heat conversion rate of the target device at the current moment are obtained. In the process of acquiring the heat information of the target device, the influence of the dynamic change of the temperature of the target device on the junction temperature protection of the target device is considered, and the acquired heat information is more relevant to the actual working state of the target device, so that the method has reliability. And the heat information comprises accumulated heat and heat conversion, and under the condition that any heat information meets the preset junction temperature protection condition, junction temperature protection operation is carried out on the target device, whether the heat information meets the preset junction temperature protection condition or not can be checked from multiple dimensions, so that an accurate checking result is obtained, and the accuracy of junction temperature protection on the target device is improved.

Drawings

FIG. 1 is a diagram of an application environment for a device junction temperature protection method in one embodiment;

FIG. 2 is a comparative schematic diagram of device temperature acquisition errors in one embodiment;

FIG. 3 is a flow chart of a method of device junction temperature protection in one embodiment;

FIG. 4 is a schematic diagram of a device junction temperature protection method in one embodiment;

FIG. 5 is a schematic diagram showing a first flow of the heat information acquisition step in one embodiment;

FIG. 6 is a first schematic diagram of a device temperature profile in one embodiment;

FIG. 7 is a schematic diagram showing a second flow of the heat information acquisition step in one embodiment;

FIG. 8 is a third flow chart of a heat information acquisition step in one embodiment;

FIG. 9 is a second schematic diagram of a device temperature profile in one embodiment;

FIG. 10 is a fourth flowchart of the heat information acquisition step in one embodiment;

FIG. 11 is a flow chart illustrating the junction temperature protection execution steps in one embodiment;

FIG. 12 is a flow chart of a predictive accumulated heat pick-up step in one embodiment;

FIG. 13 is a block diagram of a device junction temperature protection apparatus in one embodiment;

fig. 14 is an internal structural diagram of a computer device in one embodiment.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.

The junction temperature protection method of the device provided by the embodiment of the application can be applied to an application environment shown in fig. 1. Wherein the device 101, the acquisition device 102 and the controller 103 are interconnected. Device 101 is an electronic device that utilizes the special electrical characteristics of semiconductor materials to perform a particular function, such as a transistor diode, a transistor, or the like. The acquisition device 102 is used for acquiring the temperature of the device 101 at different moments, and a common acquisition device 102 may be a negative temperature coefficient (Negative Temperature Coefficient, NTC) thermistor, a temperature sensor, or the like. The controller 103 is configured to receive the device temperature acquired by the acquisition device 102, and perform a junction temperature protection operation on the device 101 according to the device temperature. Junction temperature refers to the actual operating temperature of device 101.

The temperature change of the semiconductor device is greatly influenced by the environment, and if the temperature of the semiconductor device exceeds a preset threshold value, the semiconductor device can be damaged. Therefore, junction temperature protection of the semiconductor device is required in time.

In the related art, when junction temperature protection is performed on a semiconductor device, a thermistor is often relied on to measure the temperature of the device, and if the measured temperature of the device exceeds a preset temperature threshold value, the semiconductor device is protected.

However, in the case of abrupt temperature change, since the thermistor needs a certain time to respond to the change of the ambient temperature, i.e., a thermal response time, there is a difference between the device temperature acquired by the thermistor and the actual temperature of the device, thereby reducing the accuracy of junction temperature protection of the semiconductor device.

Referring to fig. 2, fig. 2 shows a schematic diagram of the temperature collected by the thermistor and the actual temperature of the device in the case of a sharp temperature increase, and as can be seen from fig. 2, the temperature of the device collected by the thermistor is always lower than the actual temperature of the device due to the thermal response time of the thermistor. Obviously, in this case, the related art cannot perform junction temperature protection on the semiconductor device in time, and the accuracy of the corresponding junction temperature protection is low.

Based on the above, the application provides a device junction temperature protection method, which is used for executing junction temperature protection operation on a target device according to the accumulated heat and the heat conversion rate of a semiconductor device so as to improve the accuracy of junction temperature protection on the semiconductor device. The device junction temperature protection method is described below by way of one embodiment.

In one embodiment, as shown in fig. 3, a device junction temperature protection method is provided, which includes the following steps:

s301, acquiring heat information of a target device at the current moment according to temperatures corresponding to the target device at a plurality of historical moments and temperatures of the target device at the current moment; the thermal information includes the accumulated heat and the rate of change of heat of the target device.

The target device is an electronic device that utilizes the special electrical characteristics of semiconductor materials to perform a specific function, such as a transistor diode, a transistor, etc. Typically, the target device is connected to a load, and the target device is affected by the load, and the corresponding temperature change is nonlinear and irregular, which can cause damage to the target device if the target device is too hot.

In order to avoid the situation, according to the embodiment of the application, the accumulated heat and the heat change rate of the target device at the current moment are obtained according to the temperature corresponding to the target device at the historical moment and the temperature at the current moment.

The accumulated heat is the total heat generated by the target device due to temperature transformation in the time period from the initial acquisition time to the current time, and the target device can be monitored in real time by acquiring the accumulated heat of the target device, so that the target device is timely protected from being damaged.

The heat change rate refers to the obtained temperature change rate according to the temperature of the target device at the current moment and the temperature of the target device at the moment adjacent to the current moment, and the temperature change trend of the target device can be monitored by obtaining the heat change rate of the target device, so that the accumulated heat of the target device at the future moment is predicted, and the target device is protected from being damaged in advance.

For example, the temperatures of the target device at the plurality of historical moments may be measured by an NTC thermistor, and the correspondence between the resistance value of the NTC thermistor and the temperature may be fixed. Then, the NTC thermistor is connected to the target device, and the temperature of the NTC thermistor, that is, the temperature of the target device is obtained by detecting the resistance value of the NTC thermistor.

S302, if the heat information meets the preset junction temperature protection condition, junction temperature protection operation of the target device is executed.

The thermal information includes an accumulated heat and a heat rate of change of the target device, and the preset junction temperature protection condition includes a preset heat peak value and a preset rate of change threshold value of the target device, respectively. It should be noted that the heat information satisfies the preset junction temperature protection condition means that any heat information satisfies the corresponding preset junction temperature protection condition, for example, the accumulated heat reaches the preset heat peak value or the heat change rate reaches the preset accumulated change rate.

Illustratively, if the accumulated heat reaches a preset heat peak, performing a junction temperature protection operation for the target device; and if the heat change rate reaches a preset change rate threshold value, performing junction temperature protection operation on the target device. The junction temperature protection operation of the target device may be performed by disconnecting the target device from the load, or by switching the operation state of the target device to the off state.

Comparing the heat information with preset junction temperature protection conditions, wherein the comparison result is divided into two cases: (1) and if the heat information does not meet the preset junction temperature protection condition, the target device is in a normal working state, and junction temperature protection of the target device is not required to be executed. (2) And if the heat information meets the preset junction temperature condition, indicating that the target device is in or is about to be in an abnormal working state, and performing junction temperature protection operation on the target device to avoid damage to the target device.

Taking a target device as an example of a Metal-Oxide-semiconductor field effect transistor (MOSFET), hereinafter referred to as a transistor or a MOS transistor, a scene structure of performing junction temperature protection operation on the transistor is shown in fig. 4, the transistor is respectively connected with a power supply, a thermistor, a controller and a load, and in an operating state, the temperature of the transistor changes along with the change of the load, and the resistance value of the thermistor changes along with the change of the temperature of the transistor. The temperature data processor takes the temperature corresponding to the resistance value of the thermistor as the temperature of the transistor and sends the temperature to the controller, the controller acquires the heat information of the target device at the current moment according to the received temperature of the transistor, judges whether the heat information meets the preset junction temperature protection condition, and if the heat information meets the preset junction temperature protection condition, performs junction temperature protection operation on the target device.

According to the method and the device, according to temperatures corresponding to a plurality of historical moments of a target device and temperatures of the target device at the current moment, heat information of the target device at the current moment is obtained, and if the heat information meets preset junction temperature protection conditions, junction temperature protection operation of the target device is executed. Wherein the thermal information includes the accumulated heat and the rate of change of heat of the target device. The method is based on the acquisition of the temperatures corresponding to a plurality of historical moments and the temperatures at the current moment, so that the accumulated heat and the heat conversion rate of the target device at the current moment are obtained. In the process of acquiring the heat information of the target device, the influence of the dynamic change of the temperature of the target device on the junction temperature protection of the target device is considered, and the acquired heat information is more relevant to the actual working state of the target device, so that the method has reliability. And the heat information comprises accumulated heat and heat conversion, and under the condition that any heat information meets the preset junction temperature protection condition, junction temperature protection operation is carried out on the target device, whether the heat information meets the preset junction temperature protection condition or not can be checked from multiple dimensions, so that an accurate checking result is obtained, and the accuracy of junction temperature protection on the target device is improved.

In the process of junction temperature protection of the device, heat information is generally used as a basis to improve the effectiveness of junction temperature protection operation of the device. Based on this, the following describes the step of acquiring the heat information by one embodiment.

In one embodiment, as shown in fig. 5, according to temperatures corresponding to a plurality of historical moments of a target device and temperatures of the target device at a current moment, obtaining heat information of the target device at the current moment includes:

s501, constructing a temperature change curve of the target device according to temperatures corresponding to the target device at a plurality of historical moments and temperatures of the target device at the current moment.

And according to the temperatures of the target device at the plurality of historical moments and the temperatures of the target device at the current moment, the time is represented by the horizontal axis coordinates, the temperature is represented by the vertical axis coordinates, and the two-dimensional coordinates of the target device at the plurality of historical moments and the current moment are obtained. And sequentially connecting all the acquired two-dimensional coordinates to construct a temperature change curve of the target device.

Taking a target device as an MOS tube as an example, a temperature change curve is described. Referring to fig. 6, fig. 6 is a schematic diagram of a temperature change curve obtained by fitting according to temperatures corresponding to a plurality of historical moments of a MOS tube and temperatures of a target device at a current moment, wherein a horizontal axis represents time in ms, a vertical axis represents temperature in ℃.

S502, acquiring heat information of the target device at the current moment according to the temperature change curve of the target device.

And constructing a heat expression of the temperature change curve according to the temperature change curve of the target device, and acquiring the accumulated heat and the heat change rate of the target device at the current moment according to the function expression of the temperature change curve.

Optionally, the integral of the thermal expression is calculated according to the earliest time and the current time in the historical time, and the calculated integral result is used as the accumulated heat of the target device at the current time.

Optionally, calculating the derivative of the thermal expression at the current moment according to the current moment, and taking the calculated derivative result as the thermal change rate of the target device at the current moment.

In the embodiment of the application, the heat information of the target device at the current moment is obtained by constructing the temperature change curve of the target device, the junction temperature change trend of the target device can be predicted while the junction temperature change process of the target device is clearly and intuitively displayed, and the effectiveness of junction temperature protection operation on the target device is improved.

The temperature change curve of the target device includes information such as the temperature change trend of the target device, the temperature of the target device, and the time corresponding to the temperature, so the manner of acquiring the heat information of the target device at the current time according to the temperature change curve is also diversified. Based on this, a description will be given below of a manner of acquiring the heat information by way of an embodiment.

In one embodiment, as shown in fig. 7, according to a temperature change curve of a target device, obtaining thermal information of the target device at a current moment includes:

s701, dividing a temperature change curve of the target device according to a preset time interval, and obtaining a plurality of continuous curve segments corresponding to the temperature change curve of the target device.

The temperature change of the target device has a nonlinear and irregular characteristic, so the temperature change process of the target device is generally represented by a piecewise function, and obviously, the more the number of the segments in the piecewise function is, the more the temperature change process of the target device represented by the piecewise function is real.

On the basis of acquiring a temperature change curve, the temperature change curve is uniformly divided according to a preset time interval, and a plurality of continuous curve segments are acquired. It should be noted that, the preset time interval is smaller than the time interval between any two adjacent historical moments, that is, the temperature curve segments corresponding to any two adjacent historical moments are all corresponding to a plurality of continuous curve segments. For example, the temperature acquisition time interval of the target device is 10s, and the preset time interval is 10ms, then the 10s corresponds to 1000 continuous curve segments.

S702, respectively determining temperature change functions of each continuous curve segment according to the end point data of each continuous curve segment.

For any curve segment, two end point data are corresponding, a corresponding linear expression is obtained according to the two end point data, and the linear expression is used as a temperature change function of the curve segment. Obviously, the temperature change function is a unitary linear function expression.

And obtaining a linear expression of each continuous curve segment, namely a temperature change function of each continuous curve segment, according to the end point data of each continuous curve segment.

S703, acquiring the accumulated heat and the heat change rate of the target device at the current moment through the temperature change function of each continuous curve segment.

The temperature change function of each continuous curve segment is a linear expression, the linear expression of each continuous curve segment is integrated according to the end point data of each continuous curve segment, the integration result of each continuous curve segment is respectively obtained, and the superposition result of the obtained integration results of all curve segments is determined as the accumulated heat of the target device at the current moment.

And obtaining the derivative of the linear expression of the curve section at the current moment according to the current moment and the linear expression of the curve section at the current moment, and determining the derivative result as the heat change rate of the target device at the current moment.

In the embodiment of the application, the temperature change curve of the target device is divided at equal intervals to obtain a plurality of continuous curve segments, each curve segment corresponds to different temperature change functions, and the method is equivalent to representing the temperature change process of the target device in a piecewise function mode and is more close to the actual temperature change process of the target device.

The foregoing embodiments illustrate the basis for obtaining thermal information of a target device, i.e., the thermal information is obtained by a temperature variation function of each successive curve segment. Based on this, a specific procedure for acquiring the thermal information of the target device will be described below by way of one embodiment.

In one embodiment, as shown in fig. 8, the continuous curve segment includes a plurality of historical curve segments and a current curve segment, and the acquiring the accumulated heat and the heat change rate of the target device at the current moment through the temperature change function of each continuous curve segment includes:

s801, determining the slope of the temperature change function of the current curve segment as the heat change rate of the target device at the current moment.

Referring to fig. 9, fig. 9 is a schematic diagram of a continuous curve segment corresponding to a temperature variation curve of a target device, where the temperature variation curve of the target device is divided into n equal parts, and n continuous curve segments are corresponding to the temperature variation curve of the target device. Among the n continuous curve segments, the curve segment at the current moment is the current curve segment, and n-1 curve segments different from the current curve segment are the historical curve segments.

And acquiring a linear expression corresponding to the temperature change function of the current curve segment, and determining the slope corresponding to the linear expression as the heat change rate of the target device at the current moment.

Illustratively, if the linear expression of the current curve segment is: f n (t) =kn×t+an, kn is the slope of the temperature change function corresponding to the current curve segment, t is the time corresponding to the current curve segment, an is the constant of the temperature change function corresponding to the current curve segment, and the heat change rate of the target device at the current moment is kn.

S802, acquiring accumulated heat of the target device at the current moment according to the temperature change function of each historical curve segment and the temperature change function of the current curve segment.

Acquiring heat generated by a target device in each historical curve segment according to the end point data of each historical curve segment and the temperature change function of each historical curve segment; acquiring heat generated by a target device in the current curve segment according to the endpoint data of the current curve segment and the temperature change function of the current curve segment; and summing the heat generated by the target device in each historical curve segment and the heat generated by the target device in the current curve segment to obtain the accumulated heat of the target device at the current moment.

In the embodiment of the application, the curve segment is subdivided into the historical curve segment and the current curve segment so as to distinguish the temperature change trend of the target device at the current moment from the temperature change trend of the target device at the historical moment. On the basis, the heat change rate obtained according to the current curve segment is more accurate.

The accumulated heat of the target device means heat accumulated in the process of continuously rising the temperature of the target device, and in the case where the process of changing the temperature of the target device is divided into a plurality of time periods, the accumulated heat includes initial heat generated by the target device in the initial time period and heat newly added in each of the subsequent time periods. Based on this, the following describes the acquisition step of the accumulated heat of the target device by one embodiment.

In one embodiment, as shown in fig. 10, the accumulated heat includes an initial heat and a newly added heat, and the acquiring the accumulated heat of the target device at the current moment according to the temperature change function of each historical curve segment and the temperature change function of the current curve segment includes:

s1001, acquiring initial heat of a target device at the current moment according to a temperature change function of an initial curve segment and two endpoints corresponding to the initial curve segment; the initial curve segment is the curve segment corresponding to the earliest historical moment in the historical curve segments.

And calculating the integral of the temperature change function of the initial curve segment at the time interval corresponding to the initial curve segment according to the two endpoints corresponding to the initial curve segment, and taking the calculated integral result as the initial heat of the target device at the current moment.

Still taking fig. 9 as an example, the initial curve segment is a curve segment corresponding to t 0 to t1, and if two end points of the initial curve segment are (t 0, temp0), (t 1, temp1), the initial heat of the target device at the current moment is:

in the above formula, f 1 (t) is a temperature change function of the initial curve segment, and the expression is: f1 (t) =k1×t+a1, k1 is the slope of the temperature change function corresponding to the initial curve segment, t 0 is the initial time corresponding to the initial curve segment, t1 is the end time corresponding to the initial curve segment, and a1 is the constant of the temperature change function corresponding to the initial curve segment.

S1002, respectively obtaining integral results of temperature change functions of each curve segment in the adjacent curve segments, and taking a difference value of the integral results of the temperature change functions of each curve segment in the adjacent curve segments as a new heat increment of a next curve segment in the adjacent curve segments.

And respectively obtaining integral results of temperature change functions of each curve segment in any two adjacent curve segments as heat generated by each curve segment in a corresponding time interval, and then taking a difference value of the heat generated by each curve segment in the corresponding time interval as a new heat of a next curve segment in the adjacent curve segments.

Taking fig. 9 as an example, for two adjacent curve segments t 0 to t 1, t 1 to t 2, if f 1 (t) is a temperature change function of the curve segment corresponding to t 0 to t 1, and f 2 (t) is a temperature change function of the curve segment corresponding to t 1 to t 2, then the newly added heat of the curve segment corresponding to t 1 to t 2 is:

in the above formula, deltat ₂ The time interval of the curve segment corresponding to t 1-t 2.

And S1003, taking the summation result of the initial heat and the newly added heat as the accumulated heat of the target device at the current moment.

The accumulated heat of the target device at the current moment comprises initial heat generated by an initial curve segment of the target device and newly-increased heat generated by other curve segments of the target device outside the initial curve segment. And superposing the initial heat of the target device and a plurality of newly-increased heat to obtain a superposition result, namely the accumulated heat of the target device at the current moment.

Continuing with the example of fig. 9, if the current time is t n, the accumulated heat of the target device at the current time is:

in the above formula, deltat _n The time interval of the curve segments corresponding to t (n-1) to t n is f n (t), and the temperature change function of the curve segments corresponding to t (n-1) to t n is shown.

In the embodiment of the application, the heat generated by the initial curve segment is used as the initial heat, and the newly added heat generated by other curve segments is added on the basis of the initial heat, so that the accumulated heat of the target device at the current moment is determined, and the logic is clear and easy to realize.

The thermal information includes accumulated heat and a rate of change of heat, and in the following, by way of an embodiment, an explanation is given of the execution basis of the junction temperature protection operation in the case where the accumulated heat satisfies a preset junction temperature protection condition.

In one embodiment, the junction temperature protection condition includes a preset heat peak value, and if the heat information satisfies the preset junction temperature protection condition, performing a junction temperature protection operation on the target device, including:

The acquisition mode of the preset heat peak value is as follows: and stably heating the target device at the moment 0, so that the temperature rising curve of the target device is approximately linear until the target device is damaged at the moment t. And in the heating process, acquiring a preset temperature change function f (t) of the target device according to the temperature and the acquisition time of the target device. And finally, determining the corresponding result of f (T) from the moment 0 to the moment T as a preset heat peak value. The expression of the preset heat peak value is:

comparing the accumulated heat of the target device with a preset heat peak value, and if the accumulated heat of the target device is smaller than the preset heat peak value, indicating that the target device is in a normal working state without junction temperature protection operation; and if the accumulated heat of the target device is greater than or equal to the preset heat peak value, indicating that the target device is in an abnormal working state, and executing junction temperature protection operation on the target device.

In the embodiment of the application, the accumulated heat of the target device is compared with the preset heat peak value, and when the accumulated heat of the target device is larger than or equal to the preset heat peak value, junction temperature protection operation on the target device is timely carried out, so that the target device is protected from being damaged.

The thermal information includes accumulated heat and a heat change rate, and in the following, by way of an embodiment, a description is given of an execution basis of the junction temperature protection operation in the case where the heat change rate satisfies a preset junction temperature protection condition.

In one embodiment, as shown in fig. 11, the junction temperature protection condition further includes a preset change rate threshold, and if the thermal information meets the preset junction temperature protection condition, performing a junction temperature protection operation on the target device, including:

s1101, if the heat change rate is greater than or equal to a preset change rate threshold, obtaining predicted accumulated heat of the target device at a future time.

The acquisition mode of the preset change rate threshold value is as follows: and stably heating the target device at the moment 0, enabling the temperature rising curve of the target device to be approximately linear until the target device is damaged at the moment t, and determining the slope of the temperature rising curve of the target device as a preset change rate threshold value.

If the heat change rate is greater than or equal to the preset change rate threshold, the temperature change of the target device at the current moment is fast and has the risk of damage, and then, the predicted accumulated heat of the target device at the future moment is obtained assuming that the temperature change trend of the target device at the future moment is consistent with the heat change rate at the current moment.

S1102, if the predicted accumulated heat is greater than or equal to the preset heat peak, performing a junction temperature protection operation for the target device.

In the embodiment of the application, under the condition that the heat change rate meets the preset junction temperature protection condition, the predicted accumulated heat of the target device at the future moment is predicted and compared with the preset heat peak value, and when the predicted accumulated heat of the target device is greater than or equal to the preset heat peak value, the junction temperature protection operation of the target device is executed in advance, which is equivalent to the advanced protection of the target device.

Junction temperature protection of the target device is advanced, usually based on a predicted accumulated heat of the target device at a future time. Based on this, the following describes the acquisition step of predicting the accumulated heat by one embodiment.

In one embodiment, as shown in fig. 12, if the thermal rate of change is greater than or equal to the preset rate of change threshold, obtaining the predicted accumulated thermal energy of the target device at the future time comprises:

s1201, the temperature change function corresponding to the heat change rate is set as the predicted temperature change function of the target device.

And determining a temperature change function corresponding to the heat change rate as a temperature change function of the target device at a future moment, namely, determining the temperature change function corresponding to the target device at the current moment as a temperature change curve of the target device after the current moment. Thus, the temperature profile of the target device after the current time is effectively a linear expression.

S1202, obtaining predicted new heat increment of the target device in corresponding time periods of the current time and the future time according to the future time, the current time and the predicted temperature transformation function.

Firstly, according to a predicted temperature transformation function, acquiring heat generated by a target device at a time interval corresponding to the current moment to the future moment; and then, the heat generated by the target device in the time period from the current moment to the future moment and the heat generated by the curve segment of the target device before the current moment are subjected to difference, and the obtained difference result is the predicted new heat increment of the target device in the corresponding time period of the current moment and the future moment.

S1203, the newly increased heat and the accumulated heat of the target device are superimposed and predicted, and the predicted accumulated heat of the target device at the future time is obtained.

The accumulated heat of the target device is the heat of the target device before the current moment, the predicted newly-increased heat is the heat generated by the target device in the time period from the current moment to the future moment, and then the summation result of the accumulated heat of the target device and the predicted newly-increased heat is the predicted accumulated heat of the target device in the future moment.

Taking the temperature change curve shown in fig. 9 as an example, if the current time is t n and the temperature transformation function corresponding to the curve segments from t (n-1) to t (n) is f n (t), the predicted temperature transformation function of the target device is f n (t); the heat generated by the target device from the current time t n to the future time t (n+2) isThe predicted newly increased heat of the target device in the corresponding time period of the current time and the future time is as follows:

the predicted accumulated heat of the target device at the future time is:

predicted accumulated heat = accumulated heat + predicted newly increased heat

In the embodiment of the application, the reliability of the predicted temperature transformation function is improved according to the predicted temperature transformation function determined by the temperature change function of the target device at the current moment, and the obtained predicted new heat and the predicted accumulated heat are also reliable on the basis.

In one embodiment, a device junction temperature protection method is provided, comprising the steps of:

(1) And constructing a temperature change curve of the target device according to the temperatures of the target device corresponding to the plurality of historical moments and the temperatures of the target device at the current moment.

(2) Dividing the temperature change curve of the target device according to a preset time interval, and obtaining a plurality of continuous curve segments corresponding to the temperature change curve of the target device.

(3) Acquiring initial heat of the target device at the current moment according to a temperature change function of an initial curve segment in each continuous curve segment and two endpoints corresponding to the initial curve segment; the initial curve segment is the curve segment corresponding to the earliest historical moment in the historical curve segments.

(4) And respectively obtaining the integral result of the temperature change function of each curve segment in the adjacent curve segments, and taking the difference value of the integral result of the temperature change function of each curve segment in the adjacent curve segments as the newly increased heat of the next curve segment in the adjacent curve segments.

(5) And taking the summation result of the initial heat and the newly added heat as the accumulated heat of the target device at the current moment.

(6) And if the accumulated heat of the target device is greater than or equal to the preset heat peak value, performing junction temperature protection operation on the target device.

(7) And determining the slope of the temperature change function of the current curve segment as the heat change rate of the target device at the current moment according to the end point data of each continuous curve segment.

(8) And if the heat change rate is greater than or equal to a preset change rate threshold, acquiring the predicted new heat quantity of the target device in the corresponding time period of the current time and the future time according to the future time, the current time and the predicted temperature transformation function.

(9) And superposing the predicted newly-increased heat quantity and the accumulated heat quantity of the target device to obtain the predicted accumulated heat quantity of the target device at the future moment.

(10) And if the predicted accumulated heat quantity is greater than or equal to the preset heat quantity peak value, performing junction temperature protection operation on the target device.

It should be understood that, although the steps in the flowcharts related to the above embodiments are sequentially shown as indicated by arrows, these steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the flowcharts described in the above embodiments may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with at least some of the other steps or stages.

Based on the same inventive concept, the embodiment of the application also provides a device junction temperature protection device for realizing the device junction temperature protection method. The implementation of the solution provided by the device is similar to that described in the above method, so the specific limitation in the embodiments of the device junction temperature protection device or devices provided below may be referred to the limitation of the device junction temperature protection method hereinabove, and will not be repeated herein.

In one embodiment, as shown in fig. 13, there is provided a device junction temperature protection apparatus 1300 comprising: an information acquisition module 1301 and a junction temperature protection module 1302, wherein:

an information obtaining module 1301, configured to obtain heat information of the target device at a current time according to temperatures corresponding to the target device at a plurality of historical times and temperatures of the target device at the current time; the thermal information includes accumulated heat and a rate of change of heat of the target device;

the junction temperature protection module 1302 is configured to perform a junction temperature protection operation on the target device if the thermal information meets a preset junction temperature protection condition.

In one embodiment, the information obtaining module 1301 further includes: a curve construction unit and a heat acquisition unit, wherein:

the curve construction unit is used for constructing a temperature change curve of the target device according to the temperatures corresponding to the target device at a plurality of historical moments and the temperatures of the target device at the current moment;

and the heat acquisition unit is used for acquiring the heat information of the target device at the current moment according to the temperature change curve of the target device.

In one embodiment, the heat acquisition unit further comprises: a curve dividing subunit, a function determining subunit and a function calculating unit, wherein:

The curve dividing subunit is used for dividing the temperature change curve of the target device according to a preset time interval, and obtaining a plurality of continuous curve segments corresponding to the temperature change curve of the target device;

a function determining subunit, configured to determine a temperature change function of each continuous curve segment according to endpoint data of each continuous curve segment;

and the function calculation subunit is used for acquiring the accumulated heat and the heat change rate of the target device at the current moment through the temperature change function of each continuous curve segment.

In one embodiment, the function calculation subunit is further configured to determine a slope of a temperature change function of the current curve segment as a thermal change rate of the target device at the current moment; and acquiring the accumulated heat of the target device at the current moment according to the temperature change function of each historical curve segment and the temperature change function of the current curve segment.

In one embodiment, the function calculation subunit is further configured to obtain, according to a temperature change function of the initial curve segment and two endpoints corresponding to the initial curve segment, initial heat of the target device at a current moment; the initial curve segment is a curve segment corresponding to the earliest historical moment in each historical curve segment; respectively obtaining integral results of temperature change functions of each curve segment in adjacent curve segments, and taking the difference value of the integral results of the temperature change functions of each curve segment in the adjacent curve segments as the newly increased heat of the next curve segment in the adjacent curve segments; and taking the summation result of the initial heat and the newly added heat as the accumulated heat of the target device at the current moment.

In one embodiment, the junction temperature protection module 1302 includes a first execution unit configured to execute a junction temperature protection operation on a target device if the accumulated heat of the target device is greater than or equal to a preset heat peak.

In one embodiment, junction temperature protection module 1302 further includes: a heat prediction unit and a second execution unit, wherein:

the heat prediction unit is used for acquiring predicted accumulated heat of the target device at a future moment if the heat change rate is greater than or equal to a preset change rate threshold;

and the second execution unit is used for executing junction temperature protection operation on the target device if the predicted accumulated heat quantity is greater than or equal to a preset heat quantity peak value.

In one embodiment, the heat prediction unit further comprises a temperature function prediction subunit, an added heat prediction subunit, and a heat superposition subunit, wherein:

a temperature function prediction subunit, configured to take a temperature change function corresponding to the heat change rate as a predicted temperature transformation function of the target device;

the new heat quantity predicting subunit is used for obtaining the predicted new heat quantity of the target device in the corresponding time period of the current time and the future time according to the future time, the current time and the predicted temperature transformation function;

And the heat superposition subunit is used for superposing and predicting the newly added heat and the accumulated heat of the target device and acquiring the predicted accumulated heat of the target device at the future moment.

The above-mentioned device junction temperature protection device may be implemented in whole or in part by software, hardware, or a combination thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.

In one embodiment, a computer device is provided, which may be a server, and the internal structure of which may be as shown in fig. 14. The computer device includes a processor, a memory, an Input/Output interface (I/O) and a communication interface. The processor, the memory and the input/output interface are connected through a system bus, and the communication interface is connected to the system bus through the input/output interface. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, computer programs, and a database. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The database of the computer device is used for storing device junction temperature protection data. The input/output interface of the computer device is used to exchange information between the processor and the external device. The communication interface of the computer device is used for communicating with an external terminal through a network connection. The computer program is executed by a processor to implement a device junction temperature protection method.

It will be appreciated by those skilled in the art that the structure shown in fig. 14 is merely a block diagram of a portion of the structure associated with the present application and is not limiting of the computer device to which the present application applies, and that a particular computer device may include more or fewer components than shown, or may combine certain components, or have a different arrangement of components.

In one embodiment, a computer device is provided comprising a memory and a processor, the memory having stored therein a computer program, the processor when executing the computer program performing the steps of:

In one embodiment, the processor when executing the computer program further performs the steps of:

In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of:

In one embodiment, the computer program when executed by the processor further performs the steps of:

In one embodiment, a computer program product is provided comprising a computer program which, when executed by a processor, performs the steps of:

Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, database, or other medium used in the various embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high density embedded nonvolatile Memory, resistive random access Memory (ReRAM), magnetic random access Memory (Magnetoresistive Random Access Memory, MRAM), ferroelectric Memory (Ferroelectric Random Access Memory, FRAM), phase change Memory (Phase Change Memory, PCM), graphene Memory, and the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory, and the like. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like. The databases referred to in the various embodiments provided herein may include at least one of relational databases and non-relational databases. The non-relational database may include, but is not limited to, a blockchain-based distributed database, and the like. The processors referred to in the embodiments provided herein may be general purpose processors, central processing units, graphics processors, digital signal processors, programmable logic units, quantum computing-based data processing logic units, etc., without being limited thereto.

The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the present application. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application shall be subject to the appended claims.

Claims

1. A method for protecting a device from junction temperature, the method comprising:

acquiring heat information of a target device at the current moment according to temperatures corresponding to the target device at a plurality of historical moments and the temperatures of the target device at the current moment; the thermal information includes a cumulative heat and a rate of change of heat of the target device;

if the accumulated heat of the target device is greater than or equal to a preset heat peak value, junction temperature protection operation of the target device is executed;

If the heat change rate is greater than or equal to a preset change rate threshold, acquiring predicted accumulated heat of the target device at a future moment; and if the predicted accumulated heat quantity is greater than or equal to the preset heat quantity peak value, performing junction temperature protection operation on the target device.

2. The method according to claim 1, wherein the obtaining the thermal information of the target device at the current time according to the temperatures of the target device at the plurality of historical times and the temperatures of the target device at the current time includes:

constructing a temperature change curve of the target device according to the temperatures of the target device corresponding to the plurality of historical moments and the temperatures of the target device at the current moment;

and acquiring heat information of the target device at the current moment according to the temperature change curve of the target device.

3. The method according to claim 2, wherein the obtaining the thermal information of the target device at the current moment according to the temperature change curve of the target device includes:

dividing the temperature change curve of the target device according to a preset time interval to obtain a plurality of continuous curve segments corresponding to the temperature change curve of the target device;

Determining a temperature change function of each continuous curve segment according to the endpoint data of each continuous curve segment;

4. A method as in claim 3, wherein said continuous curve segments comprise a plurality of historical curve segments and a current curve segment, said deriving cumulative heat and heat rate of change for said target device at a current time from a temperature change function of each of said continuous curve segments comprising:

5. The method of claim 4, wherein the accumulated heat comprises an initial heat and a newly added heat, and wherein the obtaining the accumulated heat of the target device at the current time according to the temperature change function of each historical curve segment and the temperature change function of the current curve segment comprises:

Acquiring the initial heat of the target device at the current moment according to a temperature change function of an initial curve segment and two endpoints corresponding to the initial curve segment; the initial curve segment is a curve segment corresponding to the earliest historical moment in the historical curve segments;

respectively obtaining integral results of temperature change functions of each curve segment in adjacent curve segments, and taking a difference value of the integral results of the temperature change functions of each curve segment in the adjacent curve segments as a new heat quantity of a next curve segment in the adjacent curve segments;

6. The method of any of claims 1-5, wherein the obtaining the predicted accumulated heat of the target device at the future time if the rate of change of heat is greater than or equal to a preset rate of change threshold comprises:

obtaining predicted new heat quantity of the target device in a time period corresponding to the current time and the future time according to the future time, the current time and the predicted temperature transformation function;

7. A junction temperature protection device, the device comprising:

the information acquisition module is used for acquiring heat information of the target device at the current moment according to temperatures corresponding to the target device at a plurality of historical moments and the temperatures of the target device at the current moment; the thermal information includes a cumulative heat and a rate of change of heat of the target device;

the junction temperature protection module is used for executing junction temperature protection operation on the target device if the accumulated heat of the target device is greater than or equal to a preset heat peak value; if the heat change rate is greater than or equal to a preset change rate threshold, acquiring predicted accumulated heat of the target device at a future moment; and if the predicted accumulated heat quantity is greater than or equal to the preset heat quantity peak value, performing junction temperature protection operation on the target device.

8. The apparatus of claim 7, wherein the information acquisition module comprises:

a curve construction unit, configured to construct a temperature change curve of the target device according to temperatures corresponding to the target device at the plurality of historical moments and temperatures of the target device at the current moment;

9. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any of claims 1 to 6 when the computer program is executed.

10. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 6.