CN116825713A - Wafer conveying device with cleaning capability and cleaning method of multi-station deposition cavity - Google Patents
Wafer conveying device with cleaning capability and cleaning method of multi-station deposition cavity Download PDFInfo
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- CN116825713A CN116825713A CN202311045264.4A CN202311045264A CN116825713A CN 116825713 A CN116825713 A CN 116825713A CN 202311045264 A CN202311045264 A CN 202311045264A CN 116825713 A CN116825713 A CN 116825713A
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- gas
- wafer
- wafer carrier
- cleaning
- rotating
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- 238000004140 cleaning Methods 0.000 title claims abstract description 73
- 230000008021 deposition Effects 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 62
- 235000012431 wafers Nutrition 0.000 claims abstract description 151
- 238000010926 purge Methods 0.000 claims abstract description 87
- 230000005540 biological transmission Effects 0.000 claims abstract description 51
- 230000033001 locomotion Effects 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 16
- 230000002829 reductive effect Effects 0.000 claims abstract description 13
- 238000007664 blowing Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 241
- 230000008569 process Effects 0.000 claims description 44
- 238000005507 spraying Methods 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 19
- 239000007921 spray Substances 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000012546 transfer Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- -1 fluoride ions Chemical class 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 description 46
- 210000000078 claw Anatomy 0.000 description 30
- 238000010438 heat treatment Methods 0.000 description 15
- 210000002381 plasma Anatomy 0.000 description 15
- 239000010408 film Substances 0.000 description 9
- 230000007704 transition Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 239000011553 magnetic fluid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 230000000284 resting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a wafer transmission device with cleaning capability and a cleaning method of a multi-station deposition cavity, wherein the wafer transmission device with the cleaning capability comprises a rotating device and a purging structure, the rotating device comprises a wafer carrier, a main shaft and a lifting rotating device, the wafer carrier is fixedly arranged at the end part of the main shaft, the wafer carrier is used for bearing a plurality of wafers, and the lifting rotating device can drive the main shaft to do lifting motion and rotating motion; after the wafer moves out of the deposition chamber, the wafer carrier drives the purging structure to synchronously rotate to a set rotation angle, and the purging structure can purge at a set position. According to the wafer conveying device with the cleaning capability and the cleaning method of the multi-station deposition cavity, deposition below a main shaft of the cavity is reduced by jetting the gas generating wall through the rotating shaft, the wafer conveying device can be controlled to rotate to a proper angle during cleaning, and meanwhile, the blowing gas is jetted from the gas jetting holes, so that pollution of particles in the cavity is as low as possible.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer conveying device with cleaning capability and a cleaning method of a multi-station deposition cavity.
Background
In the field of semiconductor integrated circuits, various dielectric thin films are generally deposited by a chemical vapor deposition method, wherein the plasma-enhanced chemical vapor deposition can realize various thin film depositions at a lower temperature more quickly and is widely applied to the field of semiconductors.
The prior chemical vapor deposition equipment mainly comprises a deposition cavity, wherein a gas spray head is arranged at the top end of the deposition cavity, a heater is arranged below the gas spray head, and a wafer transmission assembly for bearing wafers is arranged between a heating disc and the gas spray head. In the process of wafer deposition, plasmas excited by a radio frequency power supply are distributed between the heating plate and the spray head, and the thin film is mainly deposited on the wafer, at this time, the wafer carrier in the wafer transmission assembly is in a non-transmission position, and the plasmas can extend to the lower part of the heating plate around the heating plate, so that the thin film is deposited below the heating plate, laterally and around the wafer transmission device, and the thin film can be deposited on the surfaces of the inner assembly of the cavity (such as the heating plate, the spray head, the wafer transmission assembly and the like) and the side wall, the upper surface, the lower surface and the corners of the deposition cavity. Because the accumulated particles on the wafer carrier can influence the local temperature control effect, the local and edge of the wafer are defective, such as warping, the etching uniformity of the defective wafer is poor, and the product yield is obviously reduced. Therefore, it is often necessary to periodically clean the chamber during deposition of the thin film to avoid the generation of particulate impurities as much as possible, which may affect the performance and reliability of the dielectric film and may even lead to complete device failure in severe cases.
Currently, the techniques commonly used in the industry for removing residues generally employ plasma cleaning and remote plasma source cleaning, i.e., a method for decomposing or desorbing the materials on the surface of the residues by using plasma.
Because the wafer transmission device in the chamber is positioned at a non-transmission position when plasma cleaning is carried out, shielding is formed on other structures of the chamber, and cleaning dead angles exist, so that the chamber is not thoroughly cleaned. The residues are easy to peel off and fall off after being accumulated for many times in the dead angle, so that the cavity is in an unclean environment, and even tiny particles can have negative effects on the growth and quality of the film in the film deposition process.
Disclosure of Invention
Aiming at the problems that the chamber is not thoroughly cleaned and dead angles are cleaned in the prior art, the invention aims to provide a wafer conveying device with cleaning capability and a cleaning method for a multi-station deposition chamber.
In order to achieve the above object, the technical scheme of the present invention is as follows: a wafer transfer device with cleaning capability, comprising:
the wafer carrier is fixedly arranged at the end part of the main shaft, the wafer carrier is used for bearing a plurality of wafers, and the lifting and rotating device can drive the main shaft to do lifting motion and rotating motion, and the lifting motion and the rotating motion independently act;
the purging structure comprises a first gas pipeline, a second gas pipeline, a third gas pipeline and three gas supply pipelines, wherein the first gas pipeline, the second gas pipeline and the third gas pipeline are three pipelines which are independent respectively, the three gas pipelines are respectively communicated with the corresponding gas supply pipelines, a plurality of gas spraying holes are formed in the three gas pipelines, the gas spraying directions of the gas spraying holes in the first gas pipeline and the second gas pipeline are inclined relative to the horizontal plane, the gas spraying directions of the first gas pipeline and the second gas pipeline are opposite, and the third gas pipeline is fixedly arranged on the lower surface of the wafer carrier and is perpendicular to the horizontal plane;
After the wafer moves out of the deposition cavity, the wafer carrier drives the purging structure to synchronously rotate to a set rotation angle, and the purging structure can purge at a set position.
Further, the rotation angle is any angle of 30 degrees, 60 degrees, 90 degrees, 180 degrees.
Further, the lifting rotating device comprises a main shaft connecting piece, a flange seat, a spring pin positioning assembly, a jacking block, a screw rod, a screw nut, a rotating body, a pneumatic rotating chuck and a motor;
the pneumatic rotary chuck comprises a clamping jaw part, the motor is rotationally connected with the clamping jaw part, the clamping jaw part comprises a plurality of clamping jaws, a clamping space is formed among the clamping jaws, and one end of the screw rod is arranged in the clamping space; the screw nut is in transmission connection with the screw rod;
the jacking block is provided with a cavity, the screw nut is positioned in the cavity, the jacking block is fixedly connected with one end of the main shaft connecting piece, the other end of the main shaft connecting piece is fixedly connected with the main shaft, and the wafer carrier is fixedly connected with the other end of the main shaft;
the rotary body is provided with a first hole, the clamping claw is arranged in the first hole, when the clamping claw and the inner wall of the first hole are tightly propped, the clamping claw and the screw rod are far away, the jacking block can rotate along with the rotary body, when the clamping claw and the inner wall of the first hole are far away, the clamping claw can clamp the screw rod, and the screw rod can rotate along with the rotary body;
The flange seat is arranged on the upper side of the rotating body, and a positioning structure is arranged at the lower edge of the flange seat; the positioning structure comprises a gradual change section, a circular arc section, a sudden change section and a smooth bulge section which are sequentially arranged;
the spring pin positioning assembly is arranged on the rotating body, the spring pin positioning assembly can rotate along with the rotating body, the spring pin positioning assembly is arranged on the lower side of the flange seat, the spring pin positioning assembly comprises a positioning pin, and when the spring pin positioning assembly rotates along with the rotating body, the positioning pin passes through the gradual change section and the circular arc section and can be clamped between the abrupt change section and the smooth bulge section.
Further, a gas supply device is fixedly arranged between the main shaft and the wafer carrier, and the gas supply device can supply purge gas into the gas supply pipeline;
the gas supply device comprises a gas supply shaft sleeve and a transmission shaft, the transmission shaft is fixedly arranged between the main shaft and the wafer carrier, the gas supply shaft sleeve is sleeved outside the transmission shaft, the gas supply shaft sleeve is rotationally connected with the transmission shaft, and the axial positions of the gas supply shaft sleeve and the transmission shaft are fixed; three mutually independent gas supply channels are formed in the gas supply shaft sleeve, and three mutually independent gas path pipelines are arranged in the transmission shaft; three annular airtight chambers are formed in the sleeving surface of the air supply shaft sleeve and the transmission shaft, the three annular airtight chambers are arranged at intervals along the axial direction, the air supply channel is communicated with the air channel pipeline through the annular airtight chambers, and the other end of the air supply channel is communicated with the air source equipment; and a sealing ring is arranged between the adjacent annular airtight chambers.
Further, the wafer transmission device further comprises an angle detection device, the angle detection device comprises a laser range finder and a photoelectric sensor, the main shaft is provided with a polygonal column section at the position corresponding to the laser range finder, and the laser range finder is used for measuring the distance between the luminous point and the outer wall of the polygonal column section to judge the rotation angle of the main shaft;
each side of the polygon prism section is provided with a strong light area and a weak light area, the strong light areas and the weak light areas are alternately arranged, and the rotation direction of the main shaft is judged by measuring the intensity of reflected light by using a photoelectric sensor.
Further, the first gas pipeline, the second gas pipeline and the third gas pipeline are all arranged into a plurality of groups, the number of the groups of the gas pipelines is equal to the number of deposition stations in the deposition cavity, the number of the gas supply pipelines is three, each gas supply pipeline comprises a plurality of branches, the number of the branches is equal to the number of the groups of the gas pipelines, and the branches are communicated with the corresponding gas pipelines.
The multi-station deposition chamber cleaning method adopts the wafer conveying device and comprises the following steps:
before the wafer is deposited, a first gas pipeline in the purging structure is opened, and the gas area blown out by the purging structure covers the edge of the spray header;
In the process of depositing the wafer, a second gas pipeline in the purging structure is opened, and the area of the gas blown out by the purging structure covers the edge of the deposition station;
after the wafer is moved out of the deposition cavity, a cleaning process and a purging process are sequentially carried out, wherein a gas spray head is adopted in the cleaning process to spray cleaning gas into the deposition cavity; blowing purge gas into the deposition cavity by adopting a purge structure in the purge process, wherein the purge structure is in a closed state in the cleaning process;
during the cleaning process and the purging process, the wafer carrier is in a rotating state;
when the multi-station deposition chamber has 4 deposition stations, the wafer carrier has a rotation angle of 15, 30, 45, 60, or 75+15x degrees, where x is an integer;
when the multi-station deposition chamber has 6 deposition stations, the wafer carrier has a rotation angle of 15, 30, or 45+15x degrees, where x is an integer.
Further, the cleaning process includes: argon is firstly introduced to purge for 30-60s, and then oxygen and NF are introduced 3 The mixed gas of the gas phase deposition chamber is ionized in the plasma body to generate fluoride ions for cleaning the cavity of the gas phase deposition chamber, and in the process of cleaning gas purging, the lifting rotating device is started to enable the wafer carrier to rotate for a plurality of times according to a set angle; the flow rate of the oxygen is 0-20000sccm, the NF 3 0-6000sccm, and 2000-30000sccm.
Further, the purging process includes: introducing purge gas under the pressure below 0.2torr, starting a lifting rotating device when the pressure of the deposition cavity is increased to 4-8torr, enabling the wafer carrier to rotate for a plurality of times according to a set angle, closing air source equipment after the rotation is finished, and enabling the pressure of the deposition cavity to be reduced to below 0.2 torr; in the rotating process of the wafer carrier, the purging structure intermittently blows air in a pulse mode, the total flow of the purging gas is 30000-40000sccm, in the rotating process of the wafer carrier, the first gas pipeline and the second gas pipeline are both in a closed state, and the third gas pipeline is in an open state.
Further, detecting the number of pollutant particles on the surface of the prepared wafer sample after the wafer is moved out of the deposition cavity, and only opening a second gas pipeline in the purging structure when the number of pollutant particles is smaller than 5; and conversely, simultaneously opening the first gas pipeline and the second gas pipeline in the purging structure.
In summary, the application has the following beneficial effects:
according to the application, the purging structure and the wafer carrier are arranged together, and in the cleaning process, the lifting rotating device drives the main shaft and the wafer carrier to synchronously act, and the wafer carrier can drive the purging structure on the wafer carrier to synchronously act, so that cleaning of different positions of the deposition cavity is realized, and the cleaning effect of the deposition cavity is improved.
Secondly, the cleaning method of the application is adopted, the deposition below the rotating shaft of the chamber is reduced by jetting the gas wall generated by the rotating shaft in the deposition process, after the wafer is completely transmitted out of the chamber, the wafer conveying device is lifted and moved according to a required mode and rotated to a plurality of specific angles in the process of cleaning the chamber, so as to change the flow direction of cleaning gas and the distribution in the chamber, after the cleaning is finished, the cleaning method is continuously matched with the operation of the purging gas, and the purging gas is jetted from the jet holes in a pulse mode to purge the corners of the chamber, so that the better cleaning of the chamber is achieved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it will be obvious that the drawings in the following description are some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 is a schematic view showing a structure of a wafer transfer apparatus with cleaning capability according to embodiment 1 of the present application installed in a deposition chamber;
Fig. 2 is a top view of a wafer transfer apparatus with cleaning capability according to embodiment 1 of the present invention;
FIG. 3 is a top view of a wafer carrier according to embodiment 1 of the present invention;
fig. 4 is a bottom view of the wafer carrier according to embodiment 1 of the present invention;
FIG. 5 is a cross-sectional view taken along A-A in FIG. 4;
fig. 6 is a plan view of the air supply device disclosed in embodiment 1 of the present invention;
FIG. 7 is a B-B cross-sectional view of FIG. 6;
FIG. 8 is a schematic diagram showing a process of detecting the rotation angle and direction of the spindle by the angle detecting device according to embodiment 1 of the present invention;
FIG. 9 is a sectional view of the lifting/lowering rotating device disclosed in embodiment 2 of the present invention;
FIG. 10 is an enlarged view of a portion C of FIG. 9;
FIG. 11 is a front view of the lifting/lowering rotating device in embodiment 2 of the present invention;
FIG. 12 is an enlarged view of a portion D of FIG. 11;
FIG. 13 is a diagram showing the ascending process of the lifting and rotating device in embodiment 2 of the present invention;
FIG. 14 is an enlarged view of a portion E of FIG. 13;
FIG. 15 is a schematic view illustrating a rotation process of the lifting/lowering rotation device in embodiment 2 of the present invention;
fig. 16 is a partial enlarged view of the portion F in fig. 15;
FIG. 17 is a schematic view showing the descending process of the lifting/lowering rotating device in embodiment 2 of the present invention;
fig. 18 is a partial enlarged view of G in fig. 17;
FIG. 19 is a schematic view showing the purging process when only the first line is opened as disclosed in example 3 of the present invention;
FIG. 20 is a schematic diagram of the purging procedure with only the second line open as disclosed in example 3 of the present invention;
FIG. 21 is a top view of the wafer carrier of embodiment 3 rotated by a certain angle;
FIG. 22 is a schematic view of purging a wafer carrier rotated 30/60 degrees according to embodiment 3 of the present invention;
fig. 23 is a schematic view showing purging of the wafer carrier disclosed in embodiment 3 of the present invention when the wafer carrier is rotated 45 degrees.
In the figure: 1. a gas shower head; 2. a wafer transfer area; 3. a wafer carrier; 3-1, a notch; 4. a main shaft; 4-1, a polygonal column section; 4-11, a strong light area; 4-12, weak light area; 5. a lifting rotating device; 5-2, a main shaft corrugated pipe; 5-3, a main shaft connecting piece; 5-4, a magnetic fluid rotating assembly; 5-41, a fixing part; 5-42, a rotating part; 5-5, a stop part; 5-6, a flange seat; 5-7, a positioning structure; 5-71, a gradual change section; 5-711, gradual change inclined plane; 5-72, arc sections; 5-721, cambered surface; 5-73, a mutation section; 5-731, a vertical plane; 5-74, smooth convex sections; 5-741, convex surfaces; 5-8, a spring pin positioning assembly; 5-81, locating pins; 5-82, an elastomer; 5-83, bolts; 5-84 parts of a cylinder; 5-9, compressing a spring; 5-10, jacking blocks; 5-11, supporting rods; 5-12 parts of a screw rod; 5-13, a nut; 5-14, a sliding block; 5-15, linear slide rails; 5-16, rotating body; 5-161, a first hole; 5-162, a second hole; 5-163, top plate; 5-164, a backboard; 5-165, a bottom plate; 5-17, a pneumatic rotary chuck; 5-171, claw parts; 5-1711, clamping jaws; 5-18, a supporting seat; 5-19, a motor; 5-20, flat keys; 5-21, a transition flange; 6-1, a first gas pipeline; 6-2, a second gas pipeline; 6-3, a third gas pipeline; 6-4, branches; 6-5, a gas supply pipeline; 6-6, air injection holes; 7. a gas supply device; 7-1, a gas supply shaft sleeve; 7-11, a shoulder; 7-12, a gas supply channel; 7-2, a transmission shaft; 7-21, small diameter section; 7-22, large diameter section; 8. an angle detection device; 9. an air path pipeline; 10. an annular airtight chamber; 20. and (3) sealing rings.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to fig. 1 to 23 in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Example 1
Referring to fig. 1 and 2, a wafer transfer apparatus with cleaning capability is disposed in a multi-station deposition chamber, and the number of stations in the multi-station deposition chamber is not limited, and in this embodiment, 4 stations are taken as an example. Four gas spray heads 1 are arranged in the multi-station deposition cavity, the gas spray heads 1 are located right above corresponding stations, heating plates are arranged below each gas spray head 1, and a wafer transmission area 2 for processing wafers is formed between each heating plate and each gas spray head 1 in a surrounding mode. The wafer transmission device comprises a wafer carrier 3, a lifting and rotating device 5, a purging structure, an air supply device 7 and an angle detection device 8. The wafer carrier 3 has a disc structure with four notches 3-1, the specifications of the notches 3-1 are the same as those of the corresponding stations, and in an initial state, the notches 3-1 are positioned between the wafer and the heating disc, so that the wafer carrier 3 can simultaneously carry 4 wafers, and when the cleaning treatment is carried out, the wafer is not placed at the notches 3-1 of the wafer carrier 3.
The lifting and rotating device 5 can drive the wafer carrier 3 to do lifting motion and rotating motion, and the lifting motion and the rotating motion respectively act independently; when the wafer carrier 3 needs to do rotary motion, the lifting and rotating device 5 can drive the wafer carrier 3 to lift to a set position, and the wafer carrier 3 is driven to descend to restore to the original position by the lifting and rotating device 5 after the rotation is completed in the appointed position.
It should be understood that the lifting and rotating device 5 mainly provides power to realize lifting and rotating actions of the spindle 4, specifically, for example, the lifting and rotating device may drive the wafer carrier 3 by an air cylinder, and when the wafer carrier 3 is lifted to a set position, the wafer carrier 3 is driven to rotate by a motor through gear transmission, etc., and the structural design form is many and is not limited herein.
With reference to fig. 3, fig. 4 and fig. 5, the purging structure is disposed on the wafer carrier 3, so that the purging structure can synchronously move along with the wafer carrier 3, and after the wafer moves out of the deposition chamber, the wafer carrier 3 drives the purging structure to synchronously rotate to a set rotation angle, and the purging structure can purge at a set position. The purge structure includes four first gas lines 6-1, four second gas lines 6-2, four third gas lines 6-3, and three gas supply lines 6-5. The first gas pipeline 6-1, the second gas pipeline 6-2 and the third gas pipeline 6-3 are provided with a plurality of gas spraying holes 6-6, the gas spraying holes 6-6 are distributed at equal intervals along the length direction of the corresponding gas pipeline, and gas in the gas pipeline can be sprayed out through the gas spraying holes 6-6.
The four first gas pipelines 6-1 are respectively arranged at the edge of the notch 3-1 on the upper surface of the wafer carrier 3, the first gas pipelines 6-1 are arc-shaped, the arc of the arc is identical with that of the notch 3-1 of the wafer carrier 3, the length of each first gas pipeline 6-1 is equal to the circumference of the notch 3-1 of the wafer carrier 3, and the gas spraying direction of the gas sprayed out of the gas spraying holes 6-6 on the first gas pipelines 6-1 is obliquely upwards arranged relative to the horizontal plane. The four second gas pipelines 6-2 are respectively arranged at the edge of the notch 3-1 on the upper surface of the wafer carrier 3, the second gas pipelines 6-2 are arc-shaped, the arc of the arc is identical with that of the notch 3-1 of the wafer carrier 3, the length of each second gas pipeline 6-2 is equal to the circumference of the notch 3-1 of the wafer carrier 3, and the gas spraying direction of the gas sprayed from the gas spraying holes 6-6 on the second gas pipelines 6-2 is obliquely downwards relative to the horizontal plane. Because the first gas line 6-1 and the second gas line 6-2 are in opposite gas injection directions, the cleaning gas can cover the upper and lower regions of the wafer carrier 3.
The four third gas pipelines 6-3 are arranged on the lower surface of the wafer carrier 3 in a divergent mode by taking the center of the wafer carrier 3 as the center to form a cross-shaped structure, the third gas pipelines 6-3 are linear pipelines, one third gas pipeline 6-3 is arranged adjacent to the second gas pipeline 6-2, the gas spraying direction of gas blown out from the upper gas spraying holes 6-6 of the third gas pipeline 6-3 is vertical to the horizontal plane, and the radiation area of the gas blown out from the third gas pipeline 6-2 and the third gas pipeline 6-3 can cover the area below the wafer carrier 3 due to the fact that the gas blown out from the three gas pipelines are divergent, and the cross-shaped distribution gas spraying holes 6-6 spray out the purge gas to purge the lower portion of the heating disc.
The three gas supply pipelines 6-5 are all vertically arranged, each gas supply pipeline 6-5 is correspondingly provided with four branches 6-4, one end of each branch 6-4 is communicated with the corresponding gas supply pipeline 6-5, the other end of each branch is communicated with the corresponding gas pipeline, the three gas pipelines are respectively communicated with the corresponding gas supply pipeline 6-5, and the pipelines are independent and do not interfere with each other.
Referring to fig. 6 and 7, the air supply device 7 is disposed between the lifting and rotating device 5 and the wafer carrier 3, and the air supply device 7 includes an air supply shaft sleeve 7-1 and a transmission shaft 7-2. The transmission shaft 7-2 is fixedly arranged at the center of the lower surface of the wafer carrier 3, the transmission shaft 7-2 comprises two small-diameter sections 7-21 and a large-diameter section 7-22 arranged between the two small-diameter sections 7-21, the small-diameter section 7-21 positioned below is connected with the lifting and rotating device 5, and the outer diameter of the large-diameter section 7-22 is larger than that of the small-diameter section 7-21; the air supply shaft sleeve 7-1 is sleeved outside the large-diameter section 7-22, and the air supply shaft sleeve 7-1 is rotationally connected with the transmission shaft 7-2. The air supply shaft sleeve 7-1 is provided with an upper end opening and a lower end opening, the openings at the two ends of the air supply shaft sleeve 7-1 are respectively and inwards extended with a blocking shoulder 7-11, the blocking shoulders 7-11 are abutted against the step surface at the transition part of the large-diameter section 7-22 and the small-diameter section 7-21, and under the action of the blocking shoulders 7-11 at the openings at the two ends, the axial positions of the air supply shaft sleeve 7-1 and the transmission shaft 7-2 are relatively fixed, so that the air supply shaft sleeve 7-1 can synchronously do lifting motion with the transmission shaft 7-2, and the air supply shaft sleeve 7-1 cannot rotate when the lifting rotating device 5 drives the transmission shaft 7-2 to do rotary motion.
Three mutually parallel gas path pipelines 9 are arranged in the transmission shaft 7-2 along the axis direction of the transmission shaft, three annular grooves are formed in the outer peripheral surface of the large-diameter section 7-22 of the transmission shaft 7-2, the openings of the annular grooves face the gas supply shaft sleeve 7-1, annular gas seal chambers 10 are formed by encircling the inner wall surface of the gas supply shaft sleeve 7-1 and the inner wall surface of the annular grooves, the three annular gas seal chambers 10 are arranged at intervals up and down along the axis direction, the three gas path pipelines 9 are respectively communicated with the corresponding annular gas seal chambers 10, and sealing rings 20 are arranged between adjacent annular gas seal chambers 10, so that the three annular gas seal chambers 10 are mutually independent and are not mutually communicated.
Three mutually independent gas supply channels 7-12 are correspondingly arranged on the gas supply shaft sleeve 7-1, one end of each gas supply channel 7-12 is communicated with the annular gas tight chamber 10, the other end of each gas supply channel is communicated with gas source equipment, the gas source equipment is started, and the purge gas can sequentially enter the corresponding gas pipelines through the gas supply channels 7-12, the annular gas tight chamber 10, the gas path pipeline 9, the gas supply pipeline 6-5 and the branch pipeline 6-4 and finally is sprayed out through the gas spraying holes 6-6 of the gas pipelines. The air inlet valve and the flow control valve are further arranged at the communication part of the air supply channel 7-12 and the air source equipment, the opening and closing of the air inlet valve is controlled, the air supply and the stopping of the air are realized, meanwhile, each air inlet valve can be opened or closed according to the needs, and thus the air supply channel 7-12 which is not necessarily used can be closed, the independent air supply of the three air supply channels 7-12 is realized, and the air source is saved. The opening degree of the flow control valve can be controlled to adjust the flow of the gas sprayed outwards from the gas pipeline, and the gas pipeline can play a good role in purging after being adaptively adjusted.
Referring to fig. 2 and 8, the angle detecting device 8 includes a laser range finder and a photoelectric sensor, the lifting and rotating device has a main shaft 4, the main shaft 4 is processed into a polygonal column section 4-1 at a position corresponding to the laser range finder, and the number of prismatic surfaces and the number of sites of the polygonal column section 4-1 are equal, and in this embodiment, a quadrangular column is taken as an example. The distance between the light emitting point and the outer wall of the polygon section 4-1 is measured by adopting a laser distance meter, when the notch 3-1 of the wafer carrier 3 is positioned right above a station, the light emitting point of the laser distance meter corresponds to the edge of the polygon section 4-1, along with the rotation of the main shaft 4, the distance between the light emitting point of the laser distance meter and the outer wall surface of the polygon section 4-1 is increased firstly and then reduced until the light emitting point of the laser distance meter corresponds to the edge of the polygon section 4-1 again, and the rotation angle of the main shaft 4 is judged through the change of the distance between the light emitting point and the outer wall of the polygon section 4-1.
The photoelectric sensor and the laser range finder are arranged on the same side of the main shaft 4, each surface of the polygonal prism section 4-1 is respectively coated with two materials with different reflection coefficients, each surface of the polygonal prism section 4-1 is equally divided into two photosensitive areas of a strong light area 4-11 and a weak light area 4-12, the areas of the strong light area 4-11 and the weak light area 4-12 are equal, the strong light area 4-11 and the weak light area 4-12 are alternately arranged, in the rotating process of the main shaft 4, the luminous point of the laser range finder passes through the strong light area 4-11 first and then passes through the weak light area 4-12, and the rotating direction of the main shaft 4 is judged by measuring the intensity of reflected light by the photoelectric sensor.
Example 2
The difference from embodiment 1 is only that, in conjunction with fig. 9 and 10, the lifting and rotating device 5 includes a main shaft 4, a main shaft connecting piece 5-3, a flange seat 5-6, a spring pin positioning assembly 5-8, a jacking block 5-10, a screw 5-12, a nut 5-13, a rotating body 5-16, a pneumatic rotating chuck 5-17, and a motor 5-19.
Referring to fig. 11 and 12, the main shaft 4 is vertically disposed below the transmission shaft 7-2 and coaxially disposed with the transmission shaft 7-2, and the main shaft 4 is fixedly connected with the transmission shaft 7-2; the pneumatic rotary chuck 5-17 comprises a clamping jaw part 5-171, the motor 5-19 is rotationally connected with the clamping jaw part 5-171, the clamping jaw part 5-171 comprises a plurality of clamping jaws 5-1711, clamping spaces are formed among the clamping jaws 5-1711, and one end of the screw rod 5-12 is arranged in the clamping spaces; the screw nut 5-13 is in transmission connection with the screw rod 5-12; the jacking block 5-10 is provided with a cavity, the screw nut 5-13 is positioned in the cavity, the cavity can limit the screw nut 5-13 to rotate along the circumferential direction of the screw rod 5-12, so that when the screw rod 5-12 rotates, the screw nut 5-13 can only reciprocate along the axial direction of the screw rod 5-12, the jacking block 5-10 is fixedly connected with one end of the main shaft connecting piece 5-3, the other end of the main shaft connecting piece 5-3 is fixedly connected with the main shaft 4, and the wafer carrier 3 is fixedly connected with the other end of the main shaft 4; when the nut 5-13 moves to be in contact with the top wall of the cavity, the nut 5-13 can push the jacking block 5-10 and the main shaft connecting piece 5-3 to synchronously move upwards, otherwise, the jacking block 5-10 can synchronously descend with the nut 5-13, and the main shaft 4 can be driven to do lifting movement.
The rotating body 5-16 is provided with a first hole 5-161, the claw 5-1711 is arranged in the first hole 5-161, when the claw 5-1711 is tightly propped against the inner wall of the first hole 5-161, the claw 5-1711 is far away from the screw rod 5-12, the jacking block 5-10 can rotate along with the rotating body 5-16, when the claw 5-1711 is far away from the inner wall of the first hole 5-161, the claw 5-1711 can clamp the screw rod 5-12, and the screw rod 5-12 can rotate along with the rotating body 5-16; when the main shaft 4 rotates, the claw 5-1711 expands outwards to prop against the rotating body 5-16, the pneumatic rotating chuck 5-17 drives the rotating body 5-16 to rotate, the jacking block 5-10 rotates along with the rotation of the rotating body 5-16, and then the main shaft connecting piece 5-3 and the main shaft 4 are driven to rotate.
The flange seat 5-6 is arranged on the upper side of the rotating body 5-16, and the lower edge of the flange seat 5-6 is provided with a positioning structure 5-7; the positioning structure 5-7 comprises a gradual change section 5-71, an arc section 5-72, a sudden change section 5-73 and a smooth bulge section 5-74 which are sequentially arranged; the spring pin positioning assembly 5-8 is arranged on the rotating body 5-16, the spring pin positioning assembly 5-8 can rotate along with the rotating body 5-16, the spring pin positioning assembly 5-8 is arranged on the lower side of the flange seat 5-6, the spring pin positioning assembly 5-8 comprises a positioning pin 5-81, and when the spring pin positioning assembly 5-8 rotates along with the rotating body 5-16, the positioning pin 5-81 can be clamped between the abrupt change section 5-73 and the smooth bulge section 5-74 after passing through the gradual change section 5-71 and the circular arc section 5-72. When the main shaft 4 rotates, the spring pin positioning assembly 5-8 rotates along with the rotating body 5-16, and when the spring pin positioning assembly moves between the abrupt section 5-73 and the smooth bulge section 5-74, the positioning pin 5-81 is clamped with the positioning structure 5-7, the motor 5-19 stops rotating, and the positioning structure 5-7 limits the rotation of the positioning pin 5-81, so that the main shaft 4 is positioned. The application realizes the lifting, rotating and positioning actions of the main shaft 4 driven by one power source, saves the occupied space of the equipment and reduces the manufacturing cost of the equipment.
In a specific embodiment, the rotating body 5-16 comprises a top plate 5-163, a back plate 5-164 and a bottom plate 5-165, the jacking block 5-10 is arranged between the top plate 5-163 and the bottom plate 5-165, the first hole 5-161 is arranged on the bottom plate 5-165, the top plate 5-163 is provided with a second hole 5-162, one end of the main shaft connecting piece 5-3 penetrates through the second hole 5-162, the spring pin positioning assembly 5-8 is arranged on the outer wall of the top plate 5-163, and the arrangement of the top plate 5-163, the back plate 5-164 and the bottom plate 5-165 plays a role in protecting the lead screw 5-12, the screw 5-13 and the jacking block 5-10.
In the specific embodiment, the lifting device further comprises a sliding block 5-14 and a linear sliding rail 5-15, wherein the linear sliding rail 5-15 is fixedly connected with the back plate 5-164, the sliding block 5-14 is in sliding connection with the linear sliding rail 5-15, the sliding block 5-14 is fixedly connected with the lifting block 5-10, and the sliding block 5-14 and the sliding rail are helpful for pushing the lifting block 5-10 to perform stable lifting motion.
In a specific embodiment, the spring pin positioning assembly 5-8 further comprises an elastic body 5-82, a bolt 5-83 and a cylinder body 5-84, the positioning pin 5-81 is fixedly connected to the upper side of the elastic body 5-82, the elastic body 5-82 is arranged on the upper side of the bolt 5-83, the bolt 5-83 is arranged in the cylinder body 5-84, the elastic body 5-82 provides elastic force for the positioning pin 5-81, and the positioning pin 5-81 stably rotates along the lower edge of the flange seat 5-6 and is clamped with the positioning structure 5-7.
In a specific embodiment, the transition section 5-71 includes a transition slope 5-711, the transition slope 5-711 being inclined toward the elastic body 5-82 in the rotational direction of the rotating body; the arc section 5-72 comprises an arc surface 5-721, and the arc surface 5-721 protrudes towards the elastic body 5-82; the abrupt change section 5-73 comprises a vertical surface 5-731, and when the locating pin 5-81 is clamped with the locating structure 5-7, the right side of the locating pin 5-81 is abutted with the vertical surface 5-731; the smooth protruding section 5-74 comprises a protruding surface 5-741, the protruding surface 5-741 protrudes towards the elastic body 5-82, when the locating pin 5-81 moves to the gradual inclined surface 5-711, the driving force provided by the motor 5-19 is gradually increased, when the locating pin 5-81 moves to the cambered surface 5-721, the driving force of the motor 5-19 is reduced from large to small, when the locating pin 5-81 moves to the vertical surface 5-731, the driving force of the motor 5-19 is greatly reduced due to the disappearance of the resistance at the top of the locating pin 5-81, the locating pin 5-81 is sprung up to be clamped with the locating structure 5-7, rotation is stopped, when rotation is restarted, the locating pin 5-81 moves to the protruding surface 5-741, the end part of the locating pin 5-81 is provided with resistance, the driving force of the motor 5-19 is increased, whether the locating pin 5-81 is in a clamping state or not can be judged by monitoring the driving force of the motor 5-19, and whether the locating pin 5-81 is in the locating state of the spindle 4 and the wafer are in the working position of vapor deposition or not can be judged.
In the specific embodiment, the magnetic fluid rotary assembly comprises a main shaft 4 corrugated pipe and a magnetic fluid rotary assembly 5-4, wherein the magnetic fluid rotary assembly 5-4 comprises a fixed part 5-41 and a rotating part 5-42, the main shaft 4 corrugated pipe is arranged between the rotating part 5-42 and the main shaft 4 and sleeved outside a main shaft connecting piece 5-3, the main shaft connecting piece 5-3 is arranged in the rotating part 5-42, the rotating part 5-42 is fixedly connected with a top plate 5-163, the fixed part 5-41 is arranged outside the rotating part 5-42 and fixedly connected with a flange seat 5-6, and the main shaft 4 corrugated pipe and the magnetic fluid rotary assembly 5-4 play a role in sealing and protecting.
In the specific embodiment, the device further comprises a compression spring 5-9, the compression spring 5-9 is sleeved on the outer side of the main shaft connecting piece 5-3, a stop part 5-5 protruding inwards in the radial direction is arranged on the inner wall of the rotating part 5-42, the compression spring 5-9 is arranged between the stop part 5-5 and the jacking block 5-10, and the compression spring 5-9 provides pre-compression force for the main shaft 4 lifting and rotating positioning device and ensures stability of the device in operation.
In the specific embodiment, the pneumatic rotary chuck further comprises a supporting rod 5-11 and a supporting seat 5-18, one end of the supporting rod 5-11 is fixedly connected with the flange seat 5-6, the other end of the supporting rod is fixedly connected with the supporting seat 5-18, the rotary body 5-16 is arranged between the flange seat 5-6 and the supporting seat 5-18, the pneumatic rotary chuck 5-17 further comprises a shell, the shell is fixedly arranged on the supporting seat 5-18, the claw portion 5-171 is rotatably connected with the shell, and the supporting rod 5-11 and the supporting seat 5-18 play a role in supporting.
In a specific embodiment, as shown in fig. 13-14, in the ascending motion process of the positioning lifting rotating device 5 of the main shaft 4 for the semiconductor equipment, as shown in fig. 5, a motor 5-19 rotates, a flat key 5-20 is arranged between the motor 5-19 and a pneumatic rotating chuck 5-17, the motor 5-19 drives a claw part 5-171 to rotate through the flat key 5-20, a claw 5-1711 rotates along with the claw part 5-171, a transition flange 5-21 is fixedly connected between a supporting seat 5-18 and the motor 5-19 to play a role of connection and size transition, as shown in fig. 6, the claw 5-1711 contracts and clamps a screw 5-12, the claw 5-1711 drives the screw 5-12 to rotate, the screw 5-12 is provided with a screw 5-13, the screw 5-12 rotates to drive the screw 5-13 to ascend, the screw 5-13 drives a slide block 5-14 to ascend in a linear slide rail 5-15, and the lifting block 5-10 ascends under the pushing of the slide block 5-171, and the lifting block 5-10 drives the main shaft to ascend along with the connecting piece 5-3 to ascend along with the main shaft 4.
In a specific embodiment, as shown in fig. 15-16, in the process of a rotation motion of a positioning lifting rotation device 5 of a spindle 4 for semiconductor equipment, as shown in fig. 8, a claw 5-1711 is opened outwards and is abutted against the inner wall of a first hole 5-161171, as shown in fig. 7, a motor 5-19 rotates, the motor 5-19 drives a claw part 5-171 to rotate through a flat key 5-20, the claw 5-1711 rotates along with the claw part 5-171, the claw 5-1711 drives a rotating body 5-16 to rotate, when the rotating body 5-16 rotates, a linear slide rail 5-15 is driven to rotate, a slide block 5-14 is driven to rotate by the linear slide rail 5-15, a jacking block 5-10 is driven to rotate by the slide block 5-10, a spindle connecting piece 5-3 is driven to rotate, and a spindle 4 rotates along with the rotation of the spindle connecting piece 5-3.
In this embodiment, the spindle 4 is provided with a tray, 4 workpiece positions are provided on the tray, the spindle 4 is rotated by 90 °, the tray is driven to rotate by 90 °, and the positions of the 4 workpiece positions are moved from the state shown in fig. 9 to the state shown in fig. 10.
In a specific embodiment, as shown in fig. 15, the motor 5-19 rotates to drive the clamping claw 5-171 to rotate, the chuck rotates with the clamping claw 5-171, the chuck drives the rotating body 5-16 to rotate, the spring pin positioning assembly 5-8 rotates with the rotating body 5-16, during the rotation process, the end part of the positioning pin 5-81 is abutted against the positioning structure 5-7, as shown in fig. 4, when the rotation process begins, the positioning pin 5-81 breaks away from the vertical plane 5-731 under a larger driving force, when the positioning pin 5-81 slides to the inclined gradual change surface, the driving force of the motor 5-19 gradually increases, the pressure exerted by the elastic body 5-82 gradually increases, when the positioning pin 5-81 moves to the cambered surface 5-721, the driving force of the motor 5-19 is greatly reduced, the pressure exerted by the elastic body 5-82 is greatly reduced, when the positioning pin 5-81 slides to the vertical plane 5-731, the elastic body 5-82 is released, the positioning pin 5-81 is clamped between the abrupt section 5-73 and the smooth convex section 5-74, and the rotation stops.
In a specific embodiment, as shown in fig. 17-18, in the descending movement process of the lifting and rotating device 5, as shown in fig. 20, at this time, the claw 5-1711 contracts again to clamp the lead screw 5-12, as shown in fig. 11, the motor 5-19 reverses, the motor 5-19 drives the claw portion 5-171 to rotate, the claw 5-1711 rotates along with the claw portion 5-171, the lead screw 5-12 rotates along with the claw portion 5-1711, the lead screw 5-12 rotates to drive the nut 5-13 to descend, the nut 5-13 drives the slider 5-14 to descend on the linear slide rail 5-15, and then drives the jacking block 5-10 to descend, and the jacking block 5-10 descends to drive the spindle connecting piece 5-3 and the spindle 4 to move downwards.
Example 3
The cleaning method of the multi-station deposition chamber adopts the wafer conveying device disclosed in the embodiment 1 or the embodiment 2, and comprises the following steps:
(1) Before the wafer is deposited, referring to fig. 2 and 19, a notch 3-1 of a wafer carrier 3 is located right above a station, a first gas pipeline 6-1 in a purging structure is opened, purging gas is introduced into the first gas pipeline 6-1, the purging gas is mixed gas composed of nitrogen and argon, the flow rate of the purging gas is below 20000sccm, and the purging time is 30-60; the gas area blown out by the blowing structure covers the edge of the spray header, the gas spray header 1 above the station is blown by blowing gas, the particles which are entangled flow are taken away, after cleaning is finished, the valve for controlling the first gas pipeline 6-1 is closed, and thus, the supply of the blowing gas into the first gas pipeline 6-1 is stopped;
(2) In the wafer deposition process, referring to fig. 2 and 20, in the multi-station deposition chamber, plasmas excited by a radio frequency power supply are distributed between the heating plate and the shower head, and when the plasmas are sprayed, an air inlet valve of the second air pipeline 6-2 is opened, inert gas is introduced into the air pipeline, and the plasmas can extend to the lower part of the heating plate around the heating plate when the air injection holes 6-6 are not opened, so that a film is deposited below the heating plate, at the side and around the wafer carrier 3. Inert gas is sprayed out through opening of the gas pipeline, so that the distribution of plasmas near the transmission shaft is limited, the film deposition at the corners below the wafer transmission device is reduced, the mutual influence of deposition stations is reduced, and meanwhile, the concentration of reaction gas near the wafer transmission device can be diluted by controlling the flow of the inert gas, so that the film thickness near the wafer transmission device is reduced; the inert gas may be nitrogen, argon or helium, etc.
(3) After the wafer is moved out of the deposition cavity, a cleaning process and a purging process are sequentially carried out, and the cavity is better cleaned by continuing to cooperate with the purging gas after the cleaning is finished;
s1: the cleaning process comprises the following steps:
s11: purging the remote plasma source for 30-60s by adopting an initiating gas argon, controlling the pressure in the deposition cavity to be 2-4torr, and introducing 1000sccm to 5000sccm of argon to initiate;
s12: spraying by using a gas spray header 1Cleaning gas (oxygen 0-20000sccm and cleaning gas NF30-6000 sccm), controlling the cavity pressure at 2.5-4torr, ionizing fluorine ions in plasma body, cleaning the surfaces of all components in the cavity of the vapor deposition chamber; NF (NF) 3 The film in the chamber is removed by reacting with the silicon-containing film to form silicon tetrafluoride, and the oxygen gas removes carbon element in the chamber by reacting with carbon.
S13: referring to fig. 21, the wafer carrier 3 is lifted by the lifting rotation device 5 and sequentially rotated to any set angle, the rotation angle of the wafer carrier 3 is 15, 30, 45, 60 or 75+15x degrees, where x is an integer, and preferred rotation angles in this embodiment include, but are not limited to, 30 degrees, 60 degrees, 90 degrees, 180 degrees, the pressure of the deposition chamber is synchronously adjusted to be controlled between 0.5torr and 2torr during rotation, a relatively high pressure is used for cleaning a region close to the remote plasma source, a relatively low pressure is used for cleaning a distal region, and the argon flow is 20000sccm-30000sccm, so that the cleaning gas can reach the corners of the chamber and the shielded region, and the cleaning efficiency of the shielded region by the wafer transmission device is improved;
When the non-notch 3-1 surface of the wafer carrier 3 is positioned above the station, the downward blowing cleaning gas can be shielded by the wafer carrier 3 to change the acting direction, and when the wafer carrier 3 rotates to 45 degrees, the gas flow direction can be changed to the maximum extent, the shielding of the original wafer transmission device position is avoided, and the side surface and the lower surface of the heating disc can be cleaned better; other angles, based on other structures in the existing chamber, such as resting at 30/60 degrees, may allow the cleaning gas to more easily reach the distal region of the chamber;
s14: repeating the operation of the step S13, and driving the main shaft 4 to reversely rotate at a rotating speed of one circle every 10 seconds to further clean the area shielded by the wafer transmission device and the far-end area of the cavity;
s15: repeating the operation of the step S14, returning the wafer conveying device to the initial position and continuously cleaning the far-end area of the cavity, closing the cleaning gas after cleaning, and closing the remote plasma source; the specific number of repetitions is determined based on the cumulative deposition film thickness within the deposition chamber.
S2: purging is performed after purging is completed, and in combination with fig. 22-23, the purging process includes:
s21: closing all air inlet valves, controlling the pressure of the deposition cavity below 0.2torr, and maintaining for 20s;
s22: detecting the number of pollution particles on the surface of the prepared wafer sample by adopting a particle detector (model: KLA surfscan system SP 5), and opening only a second gas pipeline 6-2 in the purging structure when the number of pollution particles is smaller than 5; on the contrary, the first gas pipeline 6-1 and the second gas pipeline 6-2 in the purging structure are simultaneously opened, the total flow rate of the purging gas is controlled to be 30000-40000sccm (total flow rate of nitrogen and argon), and meanwhile, the cavity pressure is set to be 4-8torr and maintained for 10s;
S23: lifting the wafer carrier 3 through a lifting rotating device 5, driving a main shaft 4 to rotate forward for 1 circle at a rotating speed of one circle every 10 seconds, rotating reversely for 1 circle, rotating alternately forward and reverse for 1 circle, synchronously starting a third gas pipeline 6-3 in the rotating process, spraying gas in a pulse mode every 2.5 seconds, and blowing the corners below the main shaft 4;
s24: starting to reversely rotate the wafer conveying device for 1 circle (rotating for 360 degrees every 10 seconds) for 10 seconds, wherein air is sprayed every 2.5 seconds in a pulse mode, and purging the corner below the rotating shaft; the particles at different positions are lifted by forward and reverse rotation, and the particles are blown away by high-flow gas after being lifted;
s25: after the rotation is finished, maintaining the pressure of the step S24 for 10S, closing and closing the air inlet, completely opening the pressure control valve plate of the deposition cavity, rapidly pumping the air in the deposition cavity to the background pressure, repeatedly executing the operations of purging and pumping to the background pressure, and repeatedly performing air inlet purging rotation and pumping to the background pressure to be beneficial to lifting particles easy to loosen and timely taking away by air flow, so that the particles at corners and covered areas can be effectively taken away;
s26: the chamber pressure is controlled below 0.2torr and maintained for 10 seconds, and then steps S22-S25 are repeated, the number of times of which depends on the number of particles in the chamber and the environmental pollution.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. A wafer transfer device having cleaning capability, comprising:
the wafer carrier (3) is fixedly arranged at the end part of the main shaft (4), the wafer carrier (3) is used for bearing a plurality of wafers, the main shaft (4) can be driven by the lifting and rotating device (5) to do lifting motion and rotating motion, and the lifting motion and the rotating motion independently act;
the purging structure comprises a first gas pipeline (6-1), a second gas pipeline (6-2), a third gas pipeline (6-3) and three gas supply pipelines (6-5), wherein the first gas pipeline (6-1), the second gas pipeline (6-2) and the third gas pipeline (6-3) are three independent pipelines respectively and are communicated with the corresponding gas supply pipelines (6-5), a plurality of gas spraying holes (6-6) are formed in each of the three gas pipelines, the gas spraying directions of the gas spraying holes (6-6) on the first gas pipeline (6-1) and the second gas pipeline (6-2) are inclined relative to the horizontal plane, the gas spraying directions of the first gas pipeline (6-1) and the second gas pipeline (6-2) are opposite, and the third gas pipeline (6-3) is fixedly arranged on the lower surface of the wafer carrier (3) and is perpendicular to the horizontal plane;
After the wafer moves out of the deposition cavity, the wafer carrier (3) drives the purging structure to synchronously rotate to a set rotation angle, and the purging structure can purge at a set position.
2. The wafer transfer device with cleaning capability according to claim 1, wherein the rotation angle is any of 30 degrees, 60 degrees, 90 degrees, 180 degrees.
3. A wafer transfer device with cleaning capability according to claim 1, characterized in that the lifting and rotating device (5) comprises a spindle (4) connector, a flange seat (5-6), a spring pin positioning assembly (5-8), a lifting block (5-10), a screw (5-12), a nut (5-13), a rotating body (5-16), a pneumatic rotating chuck (5-17) and a motor (5-19);
the pneumatic rotary chuck (5-17) comprises clamping jaw parts (5-171), the motor (5-19) is rotationally connected with the clamping jaw parts (5-171), the clamping jaw parts (5-171) comprise a plurality of clamping jaws (5-1711), clamping spaces are formed among the clamping jaws (5-1711), and one end of the screw rod (5-12) is arranged in the clamping spaces; the screw nut (5-13) is in transmission connection with the screw rod (5-12);
the jacking block (5-10) is provided with a cavity, the screw nut (5-13) is positioned in the cavity, the jacking block (5-10) is fixedly connected with one end of the main shaft (4) connecting piece, the other end of the main shaft (4) connecting piece is fixedly connected with the main shaft (4), and the wafer carrier (3) is fixedly connected with the other end of the main shaft (4);
The rotary body (5-16) is provided with a first hole (5-161), the clamping jaw (5-1711) is arranged in the first hole (5-161), when the clamping jaw (5-1711) and the inner wall of the first hole (5-161) are tightly propped, the clamping jaw (5-1711) and the screw rod (5-12) are far away, the jacking block (5-10) can rotate along with the rotary body (5-16), and when the clamping jaw (5-1711) and the inner wall of the first hole (5-161) are far away, the clamping jaw (5-1711) can clamp the screw rod (5-12), and the screw rod (5-12) can rotate along with the rotary body (5-16);
the flange seat (5-6) is arranged on the upper side of the rotating body (5-16), and a positioning structure (5-7) is arranged at the lower edge of the flange seat (5-6); the positioning structure (5-7) comprises a gradual change section (5-71), an arc section (5-72), a sudden change section (5-73) and a smooth bulge section (5-74) which are sequentially arranged;
the spring pin positioning assembly (5-8) is arranged on the rotating body (5-16), the spring pin positioning assembly (5-8) can rotate along with the rotating body (5-16), the spring pin positioning assembly (5-8) is arranged on the lower side of the flange seat (5-6), the spring pin positioning assembly (5-8) comprises a positioning pin (5-81), and when the spring pin positioning assembly (5-8) rotates along with the rotating body (5-16), the positioning pin (5-81) can be clamped between the abrupt change section (5-73) and the smooth bulge section (5-74) after passing through the gradual change section (5-71) and the circular arc section (5-72).
4. The wafer transport device with cleaning capability according to claim 1, characterized in that a gas supply device (7) is fixedly arranged between the spindle (4) and the wafer carrier (3), wherein the gas supply device (7) can supply purge gas into the gas supply pipeline (6-5);
the gas supply device (7) comprises a gas supply shaft sleeve (7-1) and a transmission shaft (7-2), the transmission shaft (7-2) is fixedly arranged between the main shaft (4) and the wafer carrier (3), the gas supply shaft sleeve (7-1) is sleeved outside the transmission shaft (7-2), the gas supply shaft sleeve (7-1) is rotationally connected with the transmission shaft (7-2), and the axial positions of the gas supply shaft sleeve (7-1) and the transmission shaft (7-2) are fixed; three mutually independent gas supply channels (7-12) are formed in the gas supply shaft sleeve (7-1), and three mutually independent gas path pipelines (9) are arranged in the transmission shaft (7-2); three annular airtight chambers (10) are formed in the sleeving surface of the air supply shaft sleeve (7-1) and the transmission shaft (7-2), the three annular airtight chambers (10) are arranged at intervals along the axial direction, the air supply channels (7-12) are communicated through the annular airtight chambers (10) and the air path pipeline (9), and the other ends of the air supply channels (7-12) are communicated with air source equipment; a sealing ring (20) is arranged between the adjacent annular airtight chambers (10).
5. The wafer conveying device with the cleaning capability according to claim 1, further comprising an angle detection device (8), wherein the angle detection device (8) comprises a laser distance meter and a photoelectric sensor, the main shaft (4) is provided with a polygonal column section (4-1) at a position corresponding to the laser distance meter, and the distance between a light emitting point and the outer wall of the polygonal column section (4-1) is measured by the laser distance meter to judge the rotation angle of the main shaft (4);
each side of the polygon prism section (4-1) is provided with a strong light area (4-11) and a weak light area (4-12), the strong light areas (4-11) and the weak light areas (4-12) are alternately arranged, and the rotation direction of the main shaft (4) is judged by measuring the intensity of reflected light by adopting a photoelectric sensor.
6. Wafer transfer device with cleaning capability according to claim 1, characterized in that the first gas lines (6-1), the second gas lines (6-2) and the third gas lines (6-3) are all arranged in a plurality of groups, the number of groups of gas lines is equal to the number of deposition stations inside the deposition chamber, the number of gas supply lines (6-5) is three, each gas supply line (6-5) comprises a plurality of branches (6-4), the number of branches (6-4) is equal to the number of groups of gas lines, and the branches (6-4) are communicated with the corresponding gas lines.
7. A method of cleaning a multi-station deposition chamber using a wafer transfer apparatus as claimed in any one of claims 1 to 6, comprising the steps of:
before the wafer is deposited, a first gas pipeline (6-1) in the purging structure is opened, and the gas area blown out by the purging structure covers the edge of the spray header;
during the wafer deposition process, a second gas pipeline (6-2) in the purging structure is opened, and the gas area blown out by the purging structure covers the edge of the deposition station;
after the wafer is moved out of the deposition cavity, a cleaning process and a purging process are sequentially carried out, wherein a gas spray head (1) is adopted in the cleaning process to spray cleaning gas into the deposition cavity; blowing purge gas into the deposition cavity by adopting a purge structure in the purge process, wherein the purge structure is in a closed state in the cleaning process; during the cleaning process and the purging process, the wafer carrier (3) is in a rotating state;
when the multi-station deposition chamber has 4 deposition stations, the rotation angle of the wafer carrier (3) is 15, 30, 45, 60 or 75+15x degrees, where x is an integer;
when the multi-station deposition chamber has 6 deposition stations, the wafer carrier (3) has a rotation angle of 15, 30 or 45+15x degrees, where x is an integer.
8. The method of claim 7, wherein the cleaning process comprises: firstly introducing argon to purge for 30-60s, then introducing a mixed gas containing NF3 and ionizing fluoride ions in a plasma body to clean a cavity of a vapor deposition chamber, and starting a lifting rotating device (5) to enable a wafer carrier (3) to rotate for a plurality of times according to a set angle in the process of purging the cleaning gas; the flow rate of the oxygen is 0-20000sccm, the NF 3 0-6000sccm, and 2000-30000sccm.
9. The method of claim 7, wherein the purging process comprises: introducing purge gas under the pressure below 0.2torr, starting a lifting rotating device (5) when the pressure of the deposition cavity is increased to 4-8torr, enabling the wafer carrier (3) to rotate for a plurality of times according to a set angle, closing air source equipment after the rotation is finished, and enabling the pressure of the deposition cavity to be reduced to below 0.2 torr; in the rotating process of the wafer carrier (3), the purging structure adopts a pulse mode to intermittently blow, the total flow of purging gas is 30000-40000sccm, in the rotating process of the wafer carrier (3), the first gas pipeline (6-1) and the second gas pipeline (6-2) are in a closed state, and the third gas pipeline (6-3) is in an open state.
10. The method for cleaning a multi-station deposition chamber according to claim 7, wherein the number of contaminant particles on the surface of the wafer sample is detected after the wafer is removed to the outside of the deposition chamber, and when the number of contaminant particles is less than 5, only the second gas line (6-2) in the purge structure is opened; conversely, the first gas pipeline (6-1) and the second gas pipeline (6-2) in the purging structure are simultaneously opened.
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| CN202311045264.4A CN116825713B (en) | 2023-08-18 | 2023-08-18 | Wafer conveying device with cleaning capability and cleaning method of multi-station deposition cavity |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736320A (en) * | 2008-11-19 | 2010-06-16 | 东京毅力科创株式会社 | Film deposition apparatus and cleaning method for the same |
| CN106920761A (en) * | 2015-12-28 | 2017-07-04 | 株式会社Eugene科技 | Lining processor |
| KR20210008549A (en) * | 2018-08-23 | 2021-01-22 | 세메스 주식회사 | Buffer unit, Apparatus and Method for treating substrate with the unit |
| CN114883242A (en) * | 2022-05-31 | 2022-08-09 | 北京北方华创微电子装备有限公司 | Wafer clamping device and cleaning equipment |
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- 2023-08-18 CN CN202311045264.4A patent/CN116825713B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736320A (en) * | 2008-11-19 | 2010-06-16 | 东京毅力科创株式会社 | Film deposition apparatus and cleaning method for the same |
| CN106920761A (en) * | 2015-12-28 | 2017-07-04 | 株式会社Eugene科技 | Lining processor |
| KR20210008549A (en) * | 2018-08-23 | 2021-01-22 | 세메스 주식회사 | Buffer unit, Apparatus and Method for treating substrate with the unit |
| CN114883242A (en) * | 2022-05-31 | 2022-08-09 | 北京北方华创微电子装备有限公司 | Wafer clamping device and cleaning equipment |
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