CN116825706A - Electrostatic chuck base and processing technology thereof - Google Patents
Electrostatic chuck base and processing technology thereof Download PDFInfo
- Publication number
- CN116825706A CN116825706A CN202310684221.4A CN202310684221A CN116825706A CN 116825706 A CN116825706 A CN 116825706A CN 202310684221 A CN202310684221 A CN 202310684221A CN 116825706 A CN116825706 A CN 116825706A
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- base body
- electrostatic chuck
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- base
- layer
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- 238000012545 processing Methods 0.000 title claims abstract description 12
- 238000005516 engineering process Methods 0.000 title claims abstract description 7
- 238000005507 spraying Methods 0.000 claims abstract description 40
- 238000007745 plasma electrolytic oxidation reaction Methods 0.000 claims abstract description 34
- 238000009423 ventilation Methods 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000002826 coolant Substances 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 16
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 8
- 238000003754 machining Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000005553 drilling Methods 0.000 claims description 3
- 238000007750 plasma spraying Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 43
- 239000000956 alloy Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/026—Anodisation with spark discharge
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/26—Anodisation of refractory metals or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Abstract
The invention discloses an electrostatic chuck base and a processing technology thereof, and aims to solve the defects that the electrostatic chuck base is poor in low temperature resistance and easy to crack. The invention comprises a base body, wherein the upper surface and the side wall of the base body are covered with insulating and wear-resistant spraying layers, and the lower surface of the base body is provided with a micro-arc oxidation layer; the base body is internally provided with an air ventilation ring cavity, the base body is provided with an air inlet hole and an air outlet hole which are communicated with the air ventilation ring cavity, and the inner walls of the air ventilation ring cavity, the air inlet hole and the air outlet hole are all provided with micro-arc oxidation layers. The electrostatic chuck base of the application has good low temperature resistance and is not easy to crack.
Description
Technical Field
The present invention relates to a semiconductor processing technology, and more particularly, to an electrostatic chuck base and a processing technology thereof.
Background
Currently, in the manufacturing process of semiconductor devices, in order to perform processes such as deposition and etching on a wafer, electrostatic suction is generally generated by an electrostatic chuck (Electrostatic chuck, abbreviated as ESC) to support and fix the wafer to be processed during the process. The electrostatic chuck mainly comprises a ceramic disk and a base for cooling and fixing. Typically, during semiconductor processing such as etching, PVD, CVD, ion implantation, the operating temperature within the chamber is high to 110℃, and low to-90℃ or even-110℃. The electrostatic chuck base made of the common aluminum alloy material is easy to have failure modes such as cracking and the like in a low-temperature environment. Because the thermal expansion coefficient of the aluminum alloy material and the thermal expansion coefficient of the ceramic disk with the built-in electrode layer are greatly different, cracking easily occurs at the junction of the metal matrix and the ceramic plate edge under the low-temperature environment (-90 ℃ and even-110 ℃), and the electrostatic chuck is invalid.
Disclosure of Invention
In order to overcome the defects, the invention provides the electrostatic chuck base and the processing technology thereof, and the electrostatic chuck base has good low temperature resistance and is not easy to crack.
In order to solve the technical problems, the invention adopts the following technical scheme: an electrostatic chuck base comprises a base body, wherein the upper surface and the side wall of the base body are covered with insulating and wear-resistant spraying layers, and the lower surface of the base body is provided with a micro-arc oxidation layer; the base body is internally provided with an air ventilation ring cavity, the base body is provided with an air inlet hole and an air outlet hole which are communicated with the air ventilation ring cavity, and the inner walls of the air ventilation ring cavity, the air inlet hole and the air outlet hole are all provided with micro-arc oxidation layers.
The spraying layer plays a role in protecting the base body, is insulating and wear-resistant, and is beneficial to prolonging the service life of the base body. The micro-arc oxidation layer covers the surface of the base body, plays a role in protecting the base body and prevents the base body from being exposed. The micro-arc oxidation layer has high hardness, wear resistance and corrosion resistance, can improve the strength of the whole base body, and prolongs the service life of the base body. The air inlet hole, the ventilation ring cavity and the air outlet hole are used for introducing helium, and the helium has good heat transfer performance and can improve the heat dissipation effect of the base body. The surface of the whole base body is completely coated by the spray coating layer and the micro-arc oxidation layer, so that the strength can be improved, and the base body is not easy to crack. The thermal expansion coefficient of the spray coating is close to that of the base body, and the interface edge of the spray coating and the base body is not easy to crack under the low-temperature condition. Therefore, the electrostatic chuck base of the application has good low temperature resistance and is not easy to crack.
Preferably, the base body is made of titanium alloy, and the spray coating is made of aluminum oxide.
The thermal expansion coefficients of the titanium alloy material and the aluminum oxide material are very close, so that the edge of the interface between the titanium alloy material and the aluminum oxide material is not easy to crack under the low-temperature condition.
Preferably, the base body is provided with a cooling channel therein, and the base body is provided with a cooling medium inlet and a cooling medium outlet which are communicated with the cooling channel.
The cooling channel can further improve the heat dissipation effect to the base body.
Preferably, the base body includes a top plate and a bottom plate welded together, and the vent ring cavity and the cooling channel are provided on a lower surface of the top plate.
The base body is formed by welding the top plate and the bottom plate, and the processing of the ventilation annular cavity and the cooling channel is facilitated.
Preferably, the thickness of the micro-arc oxidation layer is more than or equal to 10um.
The micro-arc oxidation layer has a certain thickness, and the reliable performance of the micro-arc oxidation layer is ensured.
Preferably, a plurality of countersunk holes are circumferentially arranged on the base body near the edge, and a micro-arc oxidation layer is arranged on the inner wall of each countersunk hole.
The counter bore facilitates the connection of the electrostatic chuck and the mechanical arm, and the micro-arc oxidation layer prevents the metal of the base body on the inner wall of the counter bore from being directly exposed outside, thereby ensuring the performance of the inner wall surface of the counter bore.
Preferably, the lower surface of the base body is provided with an annular nickel plating layer.
The nickel plating layer can conduct electricity and is used as an interface for conveniently inputting current and voltage to the electrostatic chuck base.
A process for processing an electrostatic chuck base, comprising the steps of:
s1, machining a top plate and a bottom plate by adopting a titanium alloy plate, machining a ventilation ring cavity and a cooling channel on the lower surface of the top plate, and performing micro-arc oxidation on the inner wall of the ventilation ring cavity to form a micro-arc oxidation layer;
s2, welding the top plate and the bottom plate together to form a base body;
s3, drilling holes on the base body to form an air inlet hole, an air outlet hole, a cooling medium inlet, a cooling medium outlet and a countersunk hole;
s4, performing micro-arc oxidation on the lower surface of the base body, the inner wall of the air inlet hole, the inner wall of the air outlet hole and the inner wall of the countersunk hole to form a micro-arc oxidation layer;
s5, performing aluminum oxide plasma spraying on the upper surface and the side wall of the base body to form a spraying layer.
Adopt roof and the bottom plate welding of titanium alloy material to form the base body, the spraying layer that base body surface formed through aluminium oxide plasma meltallizing, the base body upper surface that laminates with the ceramic dish has set up the spraying layer, and laminating connection is effectual to guarantee that whole electrostatic chuck realizes its function in equipment, satisfy the performance requirement. The thermal expansion coefficients of the base body made of the titanium alloy material and the spray coating made of the aluminum oxide material are very close, so that the edge of the interface between the base body made of the titanium alloy material and the spray coating made of the aluminum oxide material is not easy to crack under the low-temperature condition. The surface of the whole base body is completely coated by the spray coating layer and the micro-arc oxidation layer, so that the strength can be improved, and the base body is not easy to crack.
Preferably, S5, processing the surface of the spraying layer to ensure that the surface roughness of the spraying layer is less than Ra1.6, the planeness of the surface of the spraying layer is not more than 0.025, and the parallelism of the spraying layer on the upper surface of the base body and the lower surface of the base body is not more than 0.05; the cylindricity of the spraying layer on the side wall of the base body is not more than 0.05.
The surface of the spray coating is processed, so that the evenness of the surface of the spray coating meets the use requirement, and the performance of the electrostatic chuck is ensured.
Preferably, S5 is followed by plating the lower surface of the susceptor body with a nickel plating layer.
The nickel plating layer can conduct electricity and is used as an interface for conveniently inputting current and voltage to the electrostatic chuck base.
Compared with the prior art, the invention has the beneficial effects that: (1) The electrostatic chuck base has good low temperature resistance and is not easy to crack; (2) The surface of the whole base body is completely covered by the spray coating layer and the micro-arc oxidation layer, so that the metal matrix is prevented from being exposed, the corrosion resistance of the whole electrostatic chuck is improved, the use function of the electrostatic chuck is realized, and the strength of the base can be improved.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a front view of the present invention;
FIG. 3 is a cross-sectional view of the present invention;
in the figure: 1. the coating comprises a top plate, a bottom plate, 3, a spray coating, 4, a micro-arc oxidation layer, 5, a ventilation annular cavity, 6, an air inlet, 7, an air outlet, 8, a cooling channel, 9, a cooling medium inlet, 10, a cooling medium outlet, 11, a counter bore, 12, a sinking groove, 13 and a nickel plating layer.
Detailed Description
The technical scheme of the invention is further specifically described by the following specific embodiments with reference to the accompanying drawings:
examples: an electrostatic chuck base (see fig. 1-3) comprises a base body which is in a disc-shaped structure, wherein the diameter of an outer circle is 300-350mm, and the height of the base body is not more than 50mm, for example, the base body with the diameter of the outer circle of 320mm and the height of 40mm is selected. The base body comprises a top plate 1 and a bottom plate 2, the top plate and the bottom plate are welded together, and the top plate and the bottom plate are welded by adopting vacuum diffusion welding. If vacuum brazing is adopted, harmful metal ions contained in the brazing filler metal can be dissociated in the vacuum cavity, so that the semiconductor chip/silicon wafer is polluted, and therefore, the vacuum brazing is not adopted, and vacuum diffusion welding is adopted in the patent. The upper surface and the side wall of the base body are covered with an insulating and wear-resistant spray coating 3, and the lower surface of the base body is provided with a micro-arc oxidation layer 4; the base body is internally provided with an air ventilation ring cavity 5, the base body is provided with an air inlet hole 6 and an air outlet hole 7 which are communicated with the air ventilation ring cavity, the air inlet hole is arranged on the bottom plate, the air outlet hole is arranged on the top plate, and micro-arc oxidation layers are arranged on the inner walls of the air ventilation ring cavity, the air inlet hole and the air outlet hole. The base body is internally provided with a cooling channel 8 which is in a spiral structure. The base body is provided with a cooling medium inlet 9 and a cooling medium outlet 10 which are communicated with the cooling channel, and the cooling medium inlet and the cooling medium outlet are both arranged on the bottom plate. The ventilation ring cavity and the cooling channel are arranged on the lower surface of the top plate, a plurality of counter sunk holes 11 are circumferentially arranged on the base body close to the edge, and a micro-arc oxidation layer is arranged on the inner wall of each counter sunk hole. The edge of the upper surface of the top plate is provided with a sinking groove 12, and a countersunk hole is arranged on the bottom surface of the sinking groove and penetrates through the lower surface of the bottom plate. The thickness of the micro-arc oxidation layer is more than or equal to 10um, preferably 15 um, 17 um or 20 um. The base body is made of titanium alloy, and the spray coating is made of aluminum oxide. An annular nickel plating layer 13 is arranged on the lower surface of the base body.
A process for processing an electrostatic chuck base, comprising the steps of:
s1, machining a top plate and a bottom plate by adopting a titanium alloy plate, machining a ventilation ring cavity and a cooling channel on the lower surface of the top plate, and performing micro-arc oxidation on the inner wall of the ventilation ring cavity to form a micro-arc oxidation layer;
s2, welding the top plate and the bottom plate together to form a base body;
s3, drilling holes on the base body to form an air inlet hole, an air outlet hole, a cooling medium inlet, a cooling medium outlet and a countersunk hole;
s4, performing micro-arc oxidation on the lower surface of the base body, the inner wall of the air inlet hole, the inner wall of the air outlet hole and the inner wall of the countersunk hole to form a micro-arc oxidation layer;
s5, performing aluminum oxide plasma spraying on the upper surface and the side wall of the base body to form a spraying layer.
S5, grinding the surface of the spray coating to ensure that the surface roughness of the spray coating is less than Ra1.6, such as Ra1.2 and Ra1.4; the flatness of the surface of the spray coating is not more than 0.025, such as 0.020 and 0.022; the parallelism between the spray coating on the upper surface of the base body and the lower surface of the base body is not more than 0.05, such as 0.04 and 0.03; the cylindricity of the spray coating on the side wall of the base body is not more than 0.05, such as 0.04 and 0.03. S5, plating a nickel plating layer on the lower surface of the base body.
After a thermal shock test (-90-room temperature) is repeated for a plurality of times, no failure modes such as microcracks and the like are found between the spray coating and the base body, and the ceramic disc and the base are well combined.
Adopt roof and the bottom plate welding of titanium alloy material to form the base body, the spraying layer that base body surface formed through aluminium oxide plasma meltallizing, the base body upper surface that laminates with the ceramic dish has set up the spraying layer, and laminating connection is effectual to guarantee that whole electrostatic chuck realizes its function in equipment, satisfy the performance requirement. The thermal expansion coefficients of the base body made of the titanium alloy material and the spray coating made of the aluminum oxide material are very close, so that the edge of the interface between the base body made of the titanium alloy material and the spray coating made of the aluminum oxide material is not easy to crack under the low-temperature condition. The surface of the whole base body is completely coated by the spray coating layer and the micro-arc oxidation layer, so that the strength can be improved, and the base body is not easy to crack.
The above-described embodiments are merely preferred embodiments of the present invention, and the present invention is not limited in any way, and other variations and modifications may be made without departing from the technical aspects set forth in the claims.
Claims (10)
1. The electrostatic chuck base is characterized by comprising a base body, wherein the upper surface and the side wall of the base body are covered with insulating and wear-resistant spraying layers, and the lower surface of the base body is provided with a micro-arc oxidation layer; the base body is internally provided with an air ventilation ring cavity, the base body is provided with an air inlet hole and an air outlet hole which are communicated with the air ventilation ring cavity, and the inner walls of the air ventilation ring cavity, the air inlet hole and the air outlet hole are all provided with micro-arc oxidation layers.
2. An electrostatic chuck base according to claim 1, wherein the base body is made of titanium alloy and the spray coating is made of aluminum oxide.
3. An electrostatic chuck base according to claim 1, wherein the base body is provided with a cooling channel, and the base body is provided with a cooling medium inlet and a cooling medium outlet in communication with the cooling channel.
4. An electrostatic chuck base according to claim 3, wherein the base body comprises top and bottom plates welded together, the vent ring cavity and the cooling channel being disposed on a lower surface of the top plate.
5. An electrostatic chuck base according to claim 1, wherein the micro-arc oxide layer has a thickness of 10 μm or more.
6. The electrostatic chuck base of claim 1, wherein the base body is circumferentially spaced apart adjacent to the edge of the base body with a plurality of countersunk holes having a micro-arc oxide layer disposed on an inner wall thereof.
7. An electrostatic chuck base according to any one of claims 1 to 6, wherein the base body has a lower surface provided with an annular nickel plating layer.
8. The processing technology of the electrostatic chuck base is characterized by comprising the following steps of:
s1, machining a top plate and a bottom plate by adopting a titanium alloy plate, machining a ventilation ring cavity and a cooling channel on the lower surface of the top plate, and performing micro-arc oxidation on the inner wall of the ventilation ring cavity to form a micro-arc oxidation layer;
s2, welding the top plate and the bottom plate together to form a base body;
s3, drilling holes on the base body to form an air inlet hole, an air outlet hole, a cooling medium inlet, a cooling medium outlet and a countersunk hole;
s4, performing micro-arc oxidation on the lower surface of the base body, the inner wall of the air inlet hole, the inner wall of the air outlet hole and the inner wall of the countersunk hole to form a micro-arc oxidation layer;
s5, performing aluminum oxide plasma spraying on the upper surface and the side wall of the base body to form a spraying layer.
9. The process of claim 8, wherein S5 is followed by machining the surface of the sprayed layer to a roughness of less than about ra1.6, the surface of the sprayed layer having a flatness of no more than about 0.025, the upper surface of the base body having a parallelism of no more than about 0.05 with the lower surface of the base body; the cylindricity of the spraying layer on the side wall of the base body is not more than 0.05.
10. The process of claim 8, wherein S5 is followed by plating the lower surface of the base body with a nickel plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310684221.4A CN116825706A (en) | 2023-06-09 | 2023-06-09 | Electrostatic chuck base and processing technology thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310684221.4A CN116825706A (en) | 2023-06-09 | 2023-06-09 | Electrostatic chuck base and processing technology thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116825706A true CN116825706A (en) | 2023-09-29 |
Family
ID=88128521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310684221.4A Pending CN116825706A (en) | 2023-06-09 | 2023-06-09 | Electrostatic chuck base and processing technology thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116825706A (en) |
-
2023
- 2023-06-09 CN CN202310684221.4A patent/CN116825706A/en active Pending
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