CN116812855A - Micromechanical oscillator, F-P cavity and preparation method of micromechanical oscillator - Google Patents
Micromechanical oscillator, F-P cavity and preparation method of micromechanical oscillator Download PDFInfo
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- CN116812855A CN116812855A CN202310656334.3A CN202310656334A CN116812855A CN 116812855 A CN116812855 A CN 116812855A CN 202310656334 A CN202310656334 A CN 202310656334A CN 116812855 A CN116812855 A CN 116812855A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 38
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- 239000004038 photonic crystal Substances 0.000 claims abstract description 22
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
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Abstract
The application provides a micromechanical oscillator, an F-P cavity and a preparation method of the micromechanical oscillator, wherein the micromechanical oscillator comprises the following components: phonon crystal structure, mass block and suspension beam; the phonon crystal structure is a periodic structure with a defect, and the mass block is positioned in the middle of the defect and is connected with the phonon crystal structure through a suspension beam so as to take the phonon crystal structure as an outer frame; when the mechanical wave propagates on the micromechanical vibrator, the defects in the photonic crystal structure can inhibit the propagation of the standing wave, and the mechanical quality factor of the micromechanical vibrator is ensured. The MEMS micro-spring vibrator based on the photonic crystal structure design can effectively improve the mechanical quality factor of a device and greatly reduce the mechanical thermal noise of the device, and the micro-mechanical vibrator provided by the application can be applied to an optical F-P cavity acceleration sensor, and can improve the resolution of the acceleration sensor due to higher mechanical quality factor of the micro-mechanical vibrator.
Description
Technical Field
The application belongs to the field of MEMS devices, and particularly relates to a micromechanical oscillator, an F-P cavity and a preparation method of the micromechanical oscillator.
Background
As an inertial measurement unit, a Micro-Electro-Mechanical System (MEMS) sensor has the advantages of small volume, low cost, low power consumption and high integration, and has been widely studied and applied in many fields, such as consumer electronics, inertial navigation, vibration detection, and structural health monitoring. However, for high-precision sensing application or extremely weak force, displacement and acceleration measurement fields, the resolution of the MEMS acceleration sensor is limited to a great extent by mechanical thermal noise, and the mechanical thermal noise can only be optimized by a weighting scheme of increasing mass, reducing frequency and the like, so that the performance of the acceleration sensor such as bandwidth, measuring range and the like can be sacrificed.
The traditional capacitive MEMS acceleration sensor designs a mechanical structure through quasi-zero rigidity, and mechanical thermal noise can reach ng/Hz 1/2 Horizontally, but the operating bandwidth is typically below 10Hz, limiting the scope of application of the instrument to a large extent. For high-bandwidth application scenes, such as the fields of active vibration isolation, ultrasonic detection, biological sensing and the like of precise instruments, acceleration signals need to be detected under the high-bandwidth of kHz-MHz, and the resolution of an acceleration sensor is required to reach 100ng/Hz 1/2 Thermal noise of mechanical structures at high bandwidth tends to be in μg/Hz 1/2 Above the magnitude, it is difficult to meet the application requirements.
Disclosure of Invention
Aiming at the defects of the prior art, the application aims to provide a micromechanical oscillator, an F-P cavity and a preparation method of the micromechanical oscillator, and aims to solve the problem of high mechanical thermal noise of the traditional micromechanical oscillator.
To achieve the above object, in a first aspect, the present application provides a micromechanical oscillator, comprising: phonon crystal structure, mass block and suspension beam;
the phonon crystal structure is a periodic structure with a defect, and the mass block is positioned in the middle of the defect and is connected with the phonon crystal structure through a suspension beam so as to take the phonon crystal structure as an outer frame;
when the mechanical wave propagates on the micromechanical vibrator, the defects in the photonic crystal structure can inhibit the propagation of the standing wave, and the mechanical quality factor of the micromechanical vibrator is ensured.
It will be appreciated that the shape of the defect in the phononic crystal structure in the present application may be unlimited as long as the mass can be placed within the defect by the suspension beam.
In an alternative example, the suspension beam and the phonon crystal structure are integrally prepared by the same process.
In an alternative example, the size of the mass and the length of the suspension beam determine the eigenfrequency of the micromechanical vibrator.
In an alternative example, the periodic distribution parameter of the photonic crystal structure determines a frequency band of the defect suppression standing wave propagation, which is called a phonon forbidden band; wherein the eigenfrequency of the micromechanical vibrator should be in the phonon forbidden band.
In a second aspect, the present application provides an F-P chamber comprising: the micromechanical oscillator provided in the first aspect, and the micromechanical oscillator is used as a movable micromirror.
In a third aspect, the present application provides a method for preparing a micromechanical oscillator according to the first aspect, including the following steps:
deposition of SiN x A film;
in the SiN x And etching the phonon crystal structure, the suspension beam and the mass block on the film by adopting an MEMS photoetching process.
Specifically, the steps may include depositing: depositing SiN on silicon wafers x The thin film, the silicon wafer is used as a growth substrate of the thin film, and the silicon wafer substrate is removed after the structure on the thin film is etched; photoetching: (spin, exposure, development) for pattern transfer; etching: and etching a phonon crystal structure, a suspension beam and a mass block on the film.
In an alternative example, the suspension beam is shaped as a folded beam, a straight beam or a curved beam.
In a fourth aspect, the present application provides a method for preparing a micromechanical oscillator according to the first aspect, including the following steps:
and preparing a phonon crystal structure, a suspension beam and a mass block on a device layer of the SOI silicon wafer.
In an alternative example, a double-sided symmetrically distributed suspended beam is fabricated using a double-wafer SOI bonding process.
In an alternative example, the suspension beam is shaped as a folded beam, a straight beam or a curved beam.
In general, the above technical solutions conceived by the present application have the following beneficial effects compared with the prior art:
the application provides a micromechanical oscillator, an F-P cavity and a preparation method of the micromechanical oscillator, wherein the MEMS micro-spring oscillator is designed based on a photonic crystal structure, so that the mechanical quality factor of a device can be effectively improved, the mechanical thermal noise of the device is greatly reduced, and the mechanical thermal noise can be reduced on the basis of not sacrificing other performances. This reduces the vacuum requirements of the structure, and can effectively simplify packaging and assembly requirements.
The application provides a micromechanical oscillator, an F-P cavity and a preparation method of the micromechanical oscillator, wherein the MEMS micro-spring oscillator is designed based on a photonic crystal structure and can be applied to the F-P cavity, and further an acceleration sensor can be realized based on the F-P cavity matched with a related optical detection system, and the resolution of the acceleration sensor can be improved due to higher mechanical quality factors of the micromechanical oscillator. In addition, the phonon crystal structure and the spring oscillator are positioned on the same layer of the MEMS technology, so that the phonon crystal and the micro spring oscillator design of free patterns can be met, and the MEMS micro spring oscillator has the advantage of integration of the processing technology.
The application provides a micro-mechanical vibrator, an F-P cavity and a preparation method of the micro-mechanical vibrator, wherein the MEMS micro-spring vibrator based on photonic crystal structure design has the characteristics of small volume and high mechanical Q value, is suitable for an optical acceleration sensor, and can meet the application requirements of various fields such as a capacitive acceleration sensor, a resonator, a microprobe and the like.
Drawings
FIG. 1 is a schematic diagram of a phonon crystal cell structure according to an embodiment of the present application;
FIG. 2 is a plan view of a photonic crystal and a micro-spring vibrator provided by an embodiment of the present application;
FIG. 3 is a three-dimensional view of a micro spring vibrator manufactured based on an SOI process according to an embodiment of the present application;
FIG. 4 is a simulated view of the bandgap of a photonic crystal provided by an embodiment of the present application;
FIG. 5 is a cross-sectional view of an F-P cavity sensor unit provided by an embodiment of the present application;
FIG. 6 is a schematic diagram of an F-P multi-light interferometry scheme provided by an embodiment of the present application;
FIG. 7 is an optical detection system provided by an embodiment of the present application;
the same reference numbers are used throughout the drawings to reference like elements or structures, wherein: 1 is a photonic crystal structure body, 2 is a photonic crystal connecting beam, 3 is a photonic crystal cavity, 4 is a two-dimensional photonic crystal plate, 5 is a spring vibrator folding beam, 6 is a mass block, 7 is an oxide layer of an SOI silicon wafer, 8 is a substrate layer of the SOI silicon wafer, 9 is a photonic crystal band gap, 10 is a spring vibrator eigenfrequency, 11 is environmental noise, 12 is a spring vibrator structure, 13 is an F-P fixed micromirror, 14 is an F-P cavity, 15 is a multi-beam interference curve, 16 is a linear interval of interference sensing, 17 is an optical measurement working point, 18 is a laser, 19 is an electro-optical modulator, 20 is a spectrometer, 21 is an optical fiber attenuator, 22 is an optical fiber circulator, 23 is an optical fiber collimator, 24 is an F-P cavity sensing unit, 25 is a photoelectric detector, and 26 is a data acquisition terminal.
Detailed Description
For convenience of understanding, the following explains and describes english abbreviations and related technical terms related to the embodiments of the application.
Embodiments of the present application will be described below with reference to the accompanying drawings in the embodiments of the present application.
It should be noted that acceleration is a physical quantity describing the stress state of an object, and cannot be directly measured, and generally, acceleration information is converted into displacement information to be indirectly measured. The second-order nonlinear system of the spring vibrator is an ideal model for converting acceleration into displacement and consists of an outer frame, a mass block and a spring beam. In the actual measurement process, mechanical noise is difficult to avoid, and the noise equivalent acceleration mechanical thermal noise is generated by Brownian thermal motion generated by the spring vibrator structure under the action of external temperature:
wherein a is th K is equivalent acceleration noise B Is Boltzmann constant, T is the external environment temperature, omega 0 The natural frequency of the spring oscillator structure is m is the mass of the mass block, and Q is the quality factor related to dissipation.
Aiming at the problem that the existing spring vibrator has low quality factor, so that the mechanical thermal noise limits the resolution of an acceleration sensor, and the requirements of precision measurement and weak signal detection application are not met, the application provides a micromechanical vibrator. According to the application, the spring vibrator structure is prepared in a periodical defect structure of the phonon crystal, and when mechanical waves propagate on the structure, the mechanical waves are scattered by the defect structure, so that phase coherent superposition and cancellation occur between scattered waves. Thus, in a certain frequency range, the standing wave propagation in the spring vibrator can be suppressed. The working frequency band is designed in the frequency band of the phonon band gap, and noise vibration caused by external thermal environment cannot be effectively excited. By utilizing the special design of the structure, the quality factor of the spring vibrator is improved by the physical characteristic of the photonic crystal band gap, the mechanical thermal noise is reduced, and the problem of low resolution of the acceleration sensor under high-bandwidth operation is solved.
The application designs the micromechanical vibrator with high quality factor, and can be applied to the F-P cavity, and further can realize the acceleration sensor based on the F-P cavity matched with a related optical detection system, and the resolution of the F-P cavity and the acceleration sensor can be improved due to higher mechanical quality factor of the micromechanical vibrator.
Specifically, the MEMS acceleration sensor based on phonon crystal structure design provided by the application comprises: acceleration sensing unit and optical detection system.
The acceleration sensing unit comprises a spring vibrator structure and an F-P cavity optical sensing unit. The spring vibrator structure is composed of a mass block, a suspension beam structure and a sound sub-crystal structure, and plays a role in converting acceleration signals into displacement signals, and is specifically designed as follows: manufacturing a defect in a two-dimensional phonon crystal plane, connecting a mass block at the defect by using a suspension beam, suspending the mass block in a phonon crystal defect space, and enabling the mass block to vibrate in an out-of-plane direction; the phonon crystal is a periodic structure with defects, which is prepared by adopting an MEMS (micro electro mechanical system) process, and the structure enables phase coherent superposition and cancellation to occur between scattered waves, so that a phonon band gap is formed, noise vibration caused by an external thermal environment is restrained, and the quality factor of the spring vibrator is improved. The F-P cavity is composed of micromirrors with two parallel surfaces, a mass block of a spring vibrator structure is used as one movable micromirror, displacement of the mass block is detected by utilizing multi-beam interference displacement measurement, and acceleration measurement is finally achieved.
Still further, the eigenfrequency of the spring vibrator can be designed by adjusting the mass size and beam length.
Furthermore, the suspension beam is used for connecting the mass block and the phonon crystal, and various shapes such as a folded beam, a straight beam, a curved beam and the like can be adopted, and the suspension beam and the phonon crystal structure are in the same layer process, so that the integrated processing is convenient.
Further, the operating frequency band of the spring vibrator can be located within the phonon band gap by adjusting the design parameters of the periodic structure of the phonon crystal.
In one embodiment, we deposit SiN on a silicon wafer x Thin film of SiN x And preparing phonon crystals and micro-spring vibrators directly on the film by using MEMS photoetching technology.
In one embodiment, we use SOI silicon wafers (device layer-oxide layer-substrate layer) to integrally process phonon crystals and micro-spring vibrators at the device layer.
Furthermore, in the SOI process, in order to improve the modal suppression ratio of the spring oscillator, a double-sheet SOI bonding process is adopted to prepare a double-sided symmetrically distributed suspended beam structure.
Furthermore, the surface of the F-P cavity micro mirror can be coated, so that the optical detection sensitivity is improved.
The optical detection system includes: a modulation light path, a transmission light path and a photoelectric detection component. The modulation light path is used for modulating the incident 1550nm laser wavelength, so that the laser wavelength is locked at a working point on one side of a resonance peak in a detuned way; the transmission light path is used for transmitting the laser with the determined wavelength to the F-P cavity sensing unit, performing multi-beam interferometry through the F-P cavity, and finally transmitting the reflected light carrying acceleration information to the photoelectric detection component through the transmission light path to complete acceleration measurement.
According to the application, the spring vibrator structure is prepared in a periodical defect structure of the phonon crystal, and when the mechanical wave propagates on the structure, the mechanical wave is scattered by the defect structure, so that phase coherent superposition and cancellation occur between scattered waves. Thus, in a certain frequency range, the standing wave propagation in the spring vibrator can be suppressed. The working frequency band is designed in the frequency band of the phonon band gap, and noise vibration caused by external thermal environment cannot be effectively excited. By utilizing the special design of the structure, the quality factor of the spring vibrator is improved by the physical characteristic of the photonic crystal band gap, and the mechanical thermal noise is reduced, so that the resolution performance of the acceleration sensor is improved.
In the embodiment of the application, one end of the suspension beam in the spring vibrator structure is connected with the mass block, and the other end of the suspension beam is connected with the frame, so that the mass block is suspended in the plane and can vibrate in the out-of-plane direction.
In the embodiment of the application, the frequency band of the phonon band gap can be controlled by setting the proper periodic structure parameters, so as to adjust the working frequency band. That is, the frequency band where the phonon band gap is located can be changed by a special design, and the propagation of mechanical waves in a specific frequency band can be restrained.
In order to further explain the high-quality factor MEMS micro-spring vibrator based on the photonic crystal metamaterial provided by the embodiment of the application, the following details are described with reference to the accompanying drawings and specific examples:
the unit cell structure provided by the embodiment of the application is shown in figure 1; the unit cell structure comprises a structural hexagonal phonon crystal structure body 1, a connecting beam 2 and a phonon crystal cavity 3, the unit cell can be designed into any required shape, and the phonon band gap can be designed in an operating frequency band by adjusting the length of the connecting beam.
The schematic diagram of the MEMS micro-spring vibrator based on photonic crystal structure design provided by the embodiment of the application is shown in figure 2; the unit cell structure forms a phonon crystal periodic two-dimensional structure 4 through periodic arrangement, and a folding beam 5 and a mass block 6 are designed in a phonon crystal defect area to form a spring oscillator structure. The defective structure causes coherent addition and cancellation of phases between the scattered waves. Therefore, in a certain frequency range, the standing wave propagation in the spring vibrator can be restrained, noise vibration caused by the external thermal environment can not be effectively excited, the quality factor of the micro spring vibrator is effectively improved, and the thermal noise of the micro spring vibrator is reduced.
The three-dimensional diagram of the micro spring vibrator manufactured based on the SOI technology is shown in fig. 3, 4 is a two-dimensional phonon crystal structure layer prepared by a device layer of an SOI silicon wafer, 7 is an oxide layer of the SOI silicon wafer, and 8 is a substrate layer of the SOI silicon wafer. By adopting a double-piece SOI bonding process, suspension beams are arranged on the upper surface and the lower surface of the spring vibrator, and the modal suppression ratio of the spring vibrator can be improved.
As shown in FIG. 4, a photonic crystal band gap simulation diagram provided by the embodiment of the application is shown in FIG. 4, wherein 9 is a photonic band gap region, 10 is a micro-spring oscillator matrix, and 11 is external noise.
As shown in FIG. 5, the F-P cavity sensor unit provided by the embodiment of the application is characterized in that a mass block of a spring vibrator structure 12 is used as a movable micro mirror and is placed in parallel with a fixed micro mirror 13 to form an F-P cavity 14. Under the action of external acceleration, the mass block can move up and down, so that the cavity length is changed, interference phase change is caused, and finally, the fluctuation of output light intensity is shown.
The principle of optical F-P cavity interferometry provided by the embodiments of the present application is shown in fig. 6, where light is reflected and propagated between two end mirrors to form a multi-beam interference light field, and a spectrum curve 15 of the reflected light shows a series of interference peaks. The acceleration sensing process utilizes a linear interval 16 with high sensitivity at one side of the interference peak, only the laser wavelength is locked at a working point 17, and the interference peak is shifted by the movement of the mass block under the external acceleration, so that the output light intensity is changed.
As shown in FIG. 7, the acceleration optical detection scheme provided by the embodiment of the application is that a 1550nm single-frequency laser 18 is used as a sensing light source, and an electro-optic modulator 19 can adjust the wavelength of laser in a light path in a small range, so that the laser wavelength is convenient to detune and lock a resonant peak of a cavity. The spectrometer 20 is used for detecting the light wavelength in the light path in real time, the optical fiber attenuator 21 is used for adjusting the light intensity in the light path, the optical fiber circulator 22 and the optical fiber collimator 23 are used for making light incident into the sensing F-P cavity 24 for sensing, collecting reflected light carrying acceleration information, sending the reflected light to the photoelectric detector 25, and recording and analyzing the reflected light through the signal acquisition end 26.
It is to be understood that the terms such as "comprises" and "comprising," which may be used in this application, indicate the presence of the disclosed functions, operations or elements, and are not limited to one or more additional functions, operations or elements. In the present application, terms such as "comprising" and/or "having" may be construed to mean a particular feature, number, operation, constituent element, component, or combination thereof, but may not be construed to exclude the presence or addition of one or more other features, numbers, operations, constituent elements, components, or combination thereof.
Furthermore, in the present application, the expression "and/or" includes any and all combinations of the words listed in association. For example, the expression "a and/or B" may include a, may include B, or may include both a and B.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A micromechanical oscillator, comprising: phonon crystal structure, mass block and suspension beam;
the phonon crystal structure is a periodic structure with a defect, and the mass block is positioned in the middle of the defect and is connected with the phonon crystal structure through a suspension beam so as to take the phonon crystal structure as an outer frame;
when the mechanical wave propagates on the micromechanical vibrator, the defects in the photonic crystal structure can inhibit the propagation of the standing wave, and the mechanical quality factor of the micromechanical vibrator is ensured.
2. Micromechanical vibrator according to claim 1, characterized in that the suspension beam and the photonic crystal structure are integrally manufactured using the same process.
3. The micromechanical oscillator according to claim 1, characterized in that the size of the mass and the length of the suspension beam determine the eigenfrequency of the micromechanical oscillator.
4. A micromechanical oscillator according to claim 1 or 3, characterized in that the periodic distribution parameters of the photonic crystal structure determine the frequency band of the defect-suppressed standing wave propagation, called the phonon forbidden band; wherein the eigenfrequency of the micromechanical vibrator should be in the phonon forbidden band.
5. An F-P cavity, comprising: the micromechanical oscillator according to any of claims 1-4, acting as a movable micromirror.
6. A method of manufacturing a micromechanical vibrator according to any of claims 1-4, characterized by comprising the steps of:
deposition of SiN x A film;
in the SiN x And etching the phonon crystal structure, the suspension beam and the mass block on the film by adopting an MEMS photoetching process.
7. The method of claim 6, wherein the suspended beam is in the shape of a folded beam, a straight beam, or a curved beam.
8. A method of manufacturing a micromechanical vibrator according to any of claims 1-4, characterized by comprising the steps of:
and preparing a phonon crystal structure, a suspension beam and a mass block on a device layer of the SOI silicon wafer.
9. The method of claim 8, wherein the double-sided symmetrically distributed suspended beam is prepared by a double-wafer SOI bonding process.
10. The method of manufacturing according to claim 8 or 9, wherein the suspended beam is in the shape of a folded beam, a straight beam or a curved beam.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310656334.3A CN116812855A (en) | 2023-06-02 | 2023-06-02 | Micromechanical oscillator, F-P cavity and preparation method of micromechanical oscillator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310656334.3A CN116812855A (en) | 2023-06-02 | 2023-06-02 | Micromechanical oscillator, F-P cavity and preparation method of micromechanical oscillator |
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