CN116798954A - Transparent conductive substrate, manufacturing method thereof, electronic device and electronic equipment - Google Patents

Transparent conductive substrate, manufacturing method thereof, electronic device and electronic equipment Download PDF

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Publication number
CN116798954A
CN116798954A CN202310403358.8A CN202310403358A CN116798954A CN 116798954 A CN116798954 A CN 116798954A CN 202310403358 A CN202310403358 A CN 202310403358A CN 116798954 A CN116798954 A CN 116798954A
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China
Prior art keywords
transparent conductive
conductive substrate
transparent
layer
metal
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CN202310403358.8A
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Chinese (zh)
Inventor
蔡缘蓁
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Interface Optoelectronics Shenzhen Co Ltd
Interface Technology Chengdu Co Ltd
General Interface Solution Ltd
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Interface Optoelectronics Shenzhen Co Ltd
Interface Technology Chengdu Co Ltd
Yecheng Optoelectronics Wuxi Co Ltd
General Interface Solution Ltd
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Priority to CN202310403358.8A priority Critical patent/CN116798954A/en
Publication of CN116798954A publication Critical patent/CN116798954A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)

Abstract

The application relates to a transparent conductive substrate, a manufacturing method thereof, an electronic device and electronic equipment. The method comprises coating a solution containing metal complex ions on a transparent substrate to form a coating; curing the coating to form a seed layer; forming a metal layer on the seed layer through an electroplating process; the metal layer and the seed layer are etched by an etching process to form a metal wire layer on the transparent substrate, thereby forming the transparent conductive substrate. According to the method, the solution containing the metal complex ions is coated on the transparent substrate, the adhesion force between the seed layer formed by solidifying the metal complex ion solution and the transparent substrate is good, and the combination of the seed layer and the metal layer is good, so that stable and reliable adhesion force can be provided between the metal layer and the transparent substrate. Meanwhile, the transparency of the transparent base material cannot be influenced in the manufacturing process, so that the transparency of the transparent conductive substrate is ensured while the interlayer adhesion stability of the transparent conductive substrate is considered.

Description

Transparent conductive substrate, manufacturing method thereof, electronic device and electronic equipment
Technical Field
The present application relates to the field of display technologies, and in particular, to a transparent conductive substrate, a manufacturing method thereof, an electronic device, and an electronic apparatus.
Background
With the development of electronic devices, there is an increasing demand for development of transparent electronic devices using transparent display technology and eye tracking technology. However, in the related art, it is difficult to simultaneously achieve both substrate transparency and interlayer adhesion stability for a transparent conductive substrate in a transparent electronic device.
Disclosure of Invention
Based on the above, a transparent conductive substrate, a manufacturing method thereof, an electronic device and an electronic apparatus are provided, so as to solve the problem that the transparent conductive substrate is difficult to be compatible with transparency and interlayer adhesion stability.
In one aspect of the present application, there is provided a method for manufacturing a transparent conductive substrate, the method comprising:
coating a solution containing metal complex ions on a transparent substrate to form a coating;
curing the coating to form a seed layer;
forming a metal layer on the seed layer through an electroplating process;
and etching the metal layer and the seed layer through an etching process to form a metal wire layer on the transparent substrate, thereby forming the transparent conductive substrate.
In one embodiment, the curing of the coating to form a seed layer specifically includes:
the metal complex ions are reduced by a reduction process and deposited on the transparent substrate to form the seed layer.
In one embodiment, after the metal layer and the seed layer are etched by an etching process to form a transparent conductive substrate, the method further includes the steps of:
tin is plated on the metal wire layer to form a tin layer.
In one embodiment, the metal complex ion is one of a complex ion state of gold, a complex ion state of platinum, a complex ion state of silver, a complex ion state of mercury, a complex ion state of copper, a complex ion state of lead, a complex ion state of tin, a complex ion state of nickel, and a complex ion state of cobalt.
In one embodiment, the material of the transparent substrate is one of transparent polyimide, polyethylene terephthalate, cyclic olefin polymer, polyethylene naphthalate and polymethyl methacrylate.
In one embodiment, the etching process is a wet etching process.
In one embodiment, the thickness dimension of the metal layer in the first direction is 10 microns or more.
In another aspect of the present application, a transparent conductive substrate is further provided, which is manufactured by the manufacturing method of the transparent conductive substrate, and the transparent conductive substrate includes the transparent substrate, the seed layer, and the metal layer stacked along a first direction.
In one embodiment, the transparent conductive substrate further includes a tin layer disposed on the metal layer along the first direction.
In still another aspect, the present application further provides an electronic device, including the transparent conductive substrate described above.
In still another aspect, the present application further provides an electronic device, including the electronic device described above.
The transparent conductive substrate, the manufacturing method thereof, the electronic device and the electronic equipment are characterized in that a solution containing metal complex ions is coated on a transparent substrate, a seed layer is formed after the coating on the transparent substrate is solidified, a metal layer is electroplated on the seed layer, and the metal layer and the seed layer are etched to form a metal wire layer, so that the transparent conductive substrate is formed. The adhesion between the seed layer and the transparent substrate formed by solidifying the metal complex ion solution is better, and the combination with the metal layer is better, so that stable and reliable adhesion between the metal layer and the transparent substrate can be provided. Meanwhile, the transparency of the transparent base material cannot be influenced in the manufacturing process, so that the transparency of the transparent conductive substrate is ensured while the interlayer adhesion stability of the transparent conductive substrate is considered.
Drawings
FIG. 1 is a schematic diagram of a transparent conductive substrate according to an embodiment of the related art;
FIG. 2 is a schematic diagram of a transparent conductive substrate according to another embodiment of the related art;
FIG. 3 is a flow chart of a method for fabricating a transparent conductive substrate according to an embodiment of the application;
FIGS. 4 a-4 f are schematic views illustrating a process for fabricating a transparent conductive substrate according to an embodiment of the application;
FIG. 5 is a schematic illustration of a solution containing metal complex ions according to the present application;
FIG. 6 is a schematic of a solution containing conductive nanoparticles in a comparative example;
FIG. 7 is an electron microscope image of the seed layer of FIGS. 4 a-4 f;
FIG. 8 is an electron microscope image of a seed layer in a comparative example;
FIG. 9 is a cross-sectional view of the transparent substrate 110 and the seed layer 120 of FIG. 4 d;
FIG. 10 is an enlarged view of a portion of FIG. 9 at A;
FIG. 11 is a cross-sectional view of a transparent substrate 110a and a seed layer 120a in a comparative example;
fig. 12 is a partial enlarged view at B in fig. 11.
Reference numerals illustrate:
10. 20, 100: transparent conductive substrates 11, 21: transparent polyimide film
12: seed layer 13: sputtering copper layer
14: electroplated copper layer 22: adhesive glue
23: copper foil 110, 110a: transparent substrate
120. 120a: seed layer 130: metal layer
140: tin layer 200: micro light emitting diode
w: metal wire layer c: metal complex ion
And z: first direction p: conductive nanoparticles
s: solvent q: substance (B)
D1, D2, D3: thickness dimension
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Further, the drawings are not 1:1, and the relative dimensions of the various elements are drawn by way of example only in the drawings and are not necessarily drawn to true scale.
In order to facilitate understanding of the technical solution of the present application, a description will be first made of a transparent conductive substrate in the related art before the detailed description.
The transparent conductive substrate is commonly used in transparent display technology, such as transparent interactive screen, and eye tracking technology, such as AR glasses and head-up display. In the process of manufacturing the transparent conductive substrate, an optical substrate is often selected as a substrate. The polyimide is a film insulating material with better performance, and has excellent mechanical property, electrical property, chemical stability, high radiation resistance, high temperature resistance and low temperature resistance. With development of transparent electronic devices, the conventional polyimide film is yellow, and the yellow polyimide film needs to be replaced with a transparent colorless optical film substrate, such as the optical substrates shown in table 1 below, for example, transparent polyimide (Colorless Polyimide, CPI), polyethylene terephthalate (Polyethylene Terephthalate, PET), polymethyl methacrylate (Polymethyl Methacrylate, PMMA), cyclic olefin polymer (Cyclo Olefin Polymer, COP), and the like.
TABLE 1
Table 1 above shows the characteristics of the above several optical substrates, and it is clear from table 1 that the transparent polyimide has the excellent characteristics of full transmittance of more than 90%, haze of less than 0.3%, high transparency, glass transition temperature of more than 250 ℃, high heat resistance, dimensional stability, and the like.
It should be noted that, the optical property is based on the fact that the human eye can distinguish, for example, when applied to AR glasses, a higher total transmittance and a lower haze are required to avoid the hidden visual effect in front of the eyes, and if applied to a large-scale transparent display device at a long distance, a relatively lower requirement is required. D65 is artificial sunlight in a standard light source with a correlated color temperature of about 6500K, wherein b is greater than 1.5, the human eye distinguishes from yellow, resulting in an old visual effect.
FIG. 1 is a schematic diagram of a transparent conductive substrate 10 according to an embodiment of the related art; fig. 2 is a schematic diagram of a transparent conductive substrate 20 according to another embodiment of the related art.
The inventors tried to fabricate a transparent conductive substrate in two ways. As shown in fig. 1, the transparent conductive substrate 10 in the first embodiment is formed by forming a seed layer 12 on a transparent polyimide film 11, sputtering a sputtered copper layer 13 on the seed layer 12, and forming an electroplated copper layer 14 by thickening copper by a hydrolytic plating method. Wherein the seed layer 12 can improve the adhesion between the copper layer and the transparent polyimide film 11. The inventors comprehensively consider the collocation of the seed layer 12 and the etching liquid and the adhesion of the seed layer 12 in the subsequent etching of the metal line, and optionally, the material of the seed layer 12 is nichrome or copper-nickel alloy. As shown in fig. 2, the second mode tried by the inventors is to attach a copper foil 23 having a thickness of 10 μm to a transparent polyimide film 21 by means of an adhesive 22 to form a transparent conductive substrate 20. Comparison of the two approaches As shown in Table 2 below, both approaches were performed at 200℃for both optical properties and adhesion.
TABLE 2
Referring to fig. 1 and table 2, it can be seen that the transparent conductive substrate 10 manufactured in the first mode has a total transmittance of greater than 90%, a haze of less than 0.3%, and b is less than 1.5, i.e. the optical properties of the transparent conductive substrate 10 meet the requirements. However, it was found through experiments by the inventors that the adhesion between the copper layer and the transparent polyimide film 11 of the transparent conductive substrate 10 fabricated in this way is less than 0.4 kg force/cm (Kgf/cm), and it is difficult to satisfy the requirement of the interlayer bonding force.
Referring to fig. 2 and table 2 above, it can be seen that the adhesive 22 of the transparent conductive substrate 20 manufactured in the second mode increases the interlayer bonding force of the transparent conductive substrate 20, and the adhesion force between the copper foil 23 and the transparent polyimide film 21 is greater than 0.4 kilograms force per centimeter (Kgf/cm). The transparent conductive substrate 20 manufactured in this way has a total transmittance of more than 90% and b is less than 1.5, however, the haze is high, and it is difficult to meet the transparency requirement. The inventors have further studied the reason and found that the surface roughness of the copper foil 23 is limited by the existence of the surface roughness of the copper foil 23 when the copper foil 23 and the adhesive 22 are cured together, and the surface roughness of the copper foil 23 is transferred to the adhesive surface of the adhesive 22 after the adhesive 22 is cured, so that the haze is more than 1%. On this basis, the transparency is generally improved by improving the surface roughness of the copper foil 23. On the one hand, the improvement degree of the surface roughness of the copper foil 23 is limited, and on the other hand, if the surface roughness of the copper foil 23 is too low, the problem of insufficient adhesion between the copper foil 23 and the adhesive glue 22 occurs, and the price is more expensive.
Based on the above, the present inventors have made intensive studies to ensure transparency of a transparent conductive substrate while giving consideration to interlayer adhesion stability of the transparent conductive substrate by improving a manufacturing method of the transparent conductive substrate.
For convenience of description, the drawings show only structures related to the embodiments of the present application.
FIG. 3 is a flow chart showing a method for fabricating a transparent conductive substrate 100 according to an embodiment of the application; FIGS. 4 a-4 f are schematic views illustrating a process for fabricating a transparent conductive substrate 100 according to an embodiment of the application; fig. 5 shows a schematic diagram of a solution containing metal complex ions c in the present application.
Referring to fig. 3, and referring to fig. 4a to fig. 4d and fig. 5, a method for manufacturing a transparent conductive substrate 100 according to an embodiment of the application includes:
s110, coating a solution containing metal complex ions c on the transparent substrate 110 to form a coating;
s120, curing the coating to form a seed layer 120;
s130, forming a metal layer 130 on the seed layer 120 through an electroplating process;
s140, etching the metal layer 130 and the seed layer 120 by an etching process to form a metal wire layer w on the transparent substrate 110, thereby forming the transparent conductive substrate 100.
Referring to fig. 4a, in step S110, the "solution containing metal complex ion c" refers to an aqueous solution of the site compound. Coordination compounds, also known as complexes, are compounds formed from a number of ions or molecules (called ligands) giving off a lone pair or multiple delocalized electrons and atoms or ions (collectively central atoms) having a vacancy to accept a lone pair or multiple delocalized electrons in a certain composition and spatial configuration. The metal complex ion c is complex ion in the coordination compound, and the metal element is correspondingly central ion.
The present application is not limited to the aqueous solution of the complex, and for example, the copper ammonia complex containing copper ions has the formula [ Cu (NH) 3 ) 4 (H 2 O) 2 ] 2+ Silver ammonia complex containing silver ion has molecular formula of [ Ag (NH) 3 ) 2 ]+[(C 2 H 3 O 2 )] + Of course, the complex compound may be an aqueous solution of other metal complex ions, or may be a complex of other forms of copper ions or silver ions, and is not limited thereto. The "coating layer" refers to a liquid film layer attached to the surface of the transparent substrate 110 after the solution containing the metal complex ion c is coated on the transparent substrate 110, and the coating layer is cured to form a solid film layer in a step described later.
Referring to fig. 4b, in step S120, "curing" refers to curing the liquid coating into a solid film. Specifically, the step S120 includes reducing the metal complex ion c by a reduction process and depositing on the transparent substrate 110 to form the seed layer 120. The reduction process is a process of reducing the metal complex ion c using a reducing agent under a certain condition, for example, heating, so that the reduced metal is deposited on the transparent substrate 110 to form the solid metal seed layer 120. The "seed layer 120" can serve as an adhesion promoting layer to promote the bonding force between the transparent substrate 110 and the metal layer 130 in the subsequent step, thereby improving the interlayer bonding force of the transparent conductive substrate 100. In an embodiment of the present application, the thickness dimension D2 of the seed layer 120 is about 1 micron.
Referring to fig. 4c, in step S130, the "electroplating process" refers to a surface processing method for forming a plating layer by using a plated base metal as a cathode in a salt solution containing a pre-metal, and depositing cations of the pre-metal in the plating solution on the surface of the base metal by electrolysis. The base metal to be plated in the present application is the seed layer 120, and the plating layer formed is the metal layer 130. It should be noted that, the metal layer 130 with a desired thickness may be formed by electroplating according to practical requirements, and the present application is not limited herein.
In step S140, the surface treatment technique using etching is widely referred to as "etching" as shown in fig. 4 d. In an embodiment of the present application, the etching process is a wet etching process. Wet etching is a technique in which etching materials are immersed in an etching solution to be etched. The metal layer 130 and the seed layer 120 are etched to form a metal wiring layer w on the transparent base material 110, thereby completing the production of the transparent conductive substrate 100.
In the method for manufacturing the transparent conductive substrate 100, a solution containing metal complex ions c is coated on a transparent substrate 110, a seed layer 120 is formed after the coating on the transparent substrate 110 is cured, a metal layer 130 is electroplated on the seed layer 120, and the metal layer 130 and the seed layer 120 are etched to form a metal wire layer w, thereby forming the transparent conductive substrate 100. The seed layer 120 formed by curing the metal complex ion c solution has better adhesion with the transparent substrate 110 and better combination with the metal layer 130, thereby providing stable adhesion between the metal layer 130 and the transparent substrate 110. Meanwhile, the transparency of the transparent base material 110 is not affected during the manufacturing process, so that the transparency of the transparent conductive substrate 100 is ensured while the interlayer adhesion stability of the transparent conductive substrate 100 is considered.
Fig. 6 shows a schematic diagram of a solution containing conductive nanoparticles p in a comparative example; FIG. 7 shows an electron microscope image of the seed layer 120 of FIGS. 4 a-4 f; fig. 8 shows an electron microscopic view of the seed layer 120a in a pair of examples.
In the comparative example, as shown in fig. 6, a solution containing conductive nanoparticles p was coated on a transparent substrate 110a, and a film was formed from the conductive nanoparticles p, thereby improving the adhesion between the metal layer and the transparent substrate 110 a. Illustratively, it may be a nanoparticle conductive silver paste. However, referring to fig. 7, the surface morphology of the seed layer 120 formed by solidifying the solution of metal complex ion c is smoother, and the crystal structure is compact. As shown in fig. 8, in the film layer formed of the conductive nanoparticles p in the comparative example, the nanoparticles were irregularly deposited after the solvent s was volatilized, and the surface roughness of the seed layer 120a was large.
FIG. 9 shows a cross-sectional view of the transparent substrate 110 and the seed layer 120 of FIG. 4 d; FIG. 10 shows a partial enlarged view at A in FIG. 9; FIG. 11 shows a cross-sectional view of a transparent substrate 110a and a seed layer 120a in a comparative example; fig. 12 shows a partial enlarged view at B in fig. 11.
When there is an alternating current or an alternating electromagnetic field in the conductor, the current distribution inside the conductor is uneven, the current is concentrated in the "skin" portion of the conductor, that is to say the current is concentrated in a thin layer on the surface of the conductor, the closer to the surface of the conductor, the higher the current density, the lower the current actually flows inside the conductor, which phenomenon is called the skin effect. When the transparent conductive substrate 100 is applied to high frequency conduction, the roughness of the seed layer 120 in the present application is smaller, the electron distribution depth is greater than the surface roughness, the signal transmission path is shorter, and the electron loss is smaller, considering the skin effect of electrons, as shown in fig. 9 and 10. As shown in fig. 11 and 12, the electron distribution depth of the seed layer 120a in the comparative example is smaller than the surface roughness, the signal transmission path is longer, and the electron loss is larger.
Referring again to fig. 6, in the solution containing the conductive nanoparticles p, it is often necessary to add a substance q such as a surfactant or an additive for dispersing the nanoparticles to the solvent s. Since the surfactant, additive, etc. cannot be etched by the etching liquid, after the metal wire layer w is etched, the organic resin remains on the transparent substrate 110, affecting the optical performance of the transparent substrate 110. Referring to fig. 5 again, the solution containing the metal complex ion c does not need to add any surfactant or additive, so that no organic resin remains, and the influence of the organic resin residue on the optical performance of the transparent substrate 110 is avoided, thereby further improving the performance of the transparent conductive substrate 100.
Referring to fig. 4e, in some embodiments, after step S140, a step of plating tin on the metal wire layer w of the transparent conductive substrate 100 to form a tin layer 140 is further included. In connection with some of the embodiments described later, since the size of the components tends to be small in manufacturing the electronic device, it is difficult to spot tin manually, and the benefit can be effectively improved by forming the tin layer 140 by means of electroplating. As shown in fig. 4f, illustratively, after the tin layer 140 is formed, a Micro light emitting diode 200 (Micro-LED) may be mounted on the transparent conductive substrate 100 through a reflow process at 200 ℃. Of course, in other embodiments, for example, when the transparent conductive substrate 100 is applied to a 5G antenna or a transparent antenna, a step of tin plating is not required, and the transparent conductive substrate 100 may be used or processed according to actual requirements, which is not limited herein.
The inventor researches that if a plurality of metal complex ions c exist in the solution at the same time, the stability is difficult to maintain, so that the solution with one metal complex ion c is selected. In some embodiments, the metal complex ion c is one of a complex ion state of gold, a complex ion state of platinum, a complex ion state of silver, a complex ion state of mercury, a complex ion state of copper, a complex ion state of lead, a complex ion state of tin, a complex ion state of nickel, a complex ion state of cobalt. It should be noted that, for example, mercury and lead belong to the virulent category, and simultaneously, the binding force and etching convenience of metal are comprehensively considered, and optionally, the metal complex ion c is in a complex ion state of gold, a complex ion state of silver or a complex ion state of copper. On this basis, in view of cost, the metal complex ion c selected in the embodiment of the present application is in a complex ion state of silver or copper.
Referring to fig. 4d, in some embodiments, the material of the transparent substrate 110 is one of transparent polyimide (Colorless Polyimide, CPI), polyethylene terephthalate (Polyethylene Terephthalate, PET), cyclic olefin polymer (Cyclo Olefin Polymer, COP), polyethylene naphthalate (Polyethylene Naphthalate, PEN), polymethyl methacrylate (Polymethyl Methacrylate, PMMA). When the transparent substrate 110 needs to have the high temperature resistant property, a transparent polyimide material may be selected, and in the embodiment of the present application, the thickness dimension D1 of the transparent substrate 110 in the first direction z is 10 micrometers to 50 micrometers. The transparent polyimide film has high transparency, the transmittance can reach 88 to 92 percent, the haze is below 1 percent, the glass transition temperature (Glass Transition Temperature, tg) is 200 to 350 ℃, and the transparent polyimide film can be applied to the reflow process of the micro light-emitting diode 200 by combining the above. When the high temperature resistance is not required, a polyethylene terephthalate material, a cycloolefin polymer material, a polyethylene naphthalate material or a polymethyl methacrylate material can be selected.
As shown in fig. 4D, in some embodiments, the thickness dimension D3 of the metal layer 130 in the first direction z is 10 microns or more. Taking the metal layer 130 as an example of a copper layer, when the transparent conductive substrate 100 is applied to an eye tracking technology such as AR glasses, the thickness dimension of the copper layer is at least 10 μm. When applied to the micro led 200, the thickness of the copper layer is 16 microns to 35 microns. Of course, the thickness of the metal layer 130 may be adjusted according to the actual metal selected and the application scenario, which is only an example and not a limitation.
As shown in fig. 3 and 4d, based on the same inventive concept, the present application further provides a transparent conductive substrate 100 manufactured by the above-mentioned manufacturing method of the transparent conductive substrate 100, wherein the transparent conductive substrate 100 includes a transparent base 110, a seed layer 120, and a metal layer 130 stacked along a first direction z. In this way, the seed layer 120 serves as a connection layer between the transparent substrate 110 and the metal layer 130, so that the adhesion between the metal layer 130 and the transparent substrate 110 can be reliably improved. In addition, the transparency of the transparent conductive substrate 110 of the transparent conductive substrate 100 manufactured by the manufacturing method of the transparent conductive substrate 100 is not affected, and the transparent conductive substrate 100 can achieve both interlayer bonding force and transparency.
In addition, the seed layer 120 in the application has compact crystal structure, smoother surface morphology under the electron microscope image, smaller surface roughness, smaller electron loss under high-frequency conduction, and improves the conductive effect of the transparent conductive substrate 100. In addition, the seed layer 120 does not contain components such as surfactants and additives, and the organic resin does not remain after etching the metal wiring layer w, so that the optical performance of the transparent substrate 110 is not affected.
As shown in fig. 4e, in some embodiments, the transparent conductive substrate 100 further includes a tin layer 140 disposed on the metal layer 130 along the first direction z. When the transparent conductive substrate 100 is applied to an electronic device, for example, as shown in fig. 4f, the micro light emitting diode may be soldered by means of the tin layer 140. Of course, in other embodiments, for example, when applied to a 5G antenna or a transparent antenna, the tin layer 140 may not be provided, and the transparent conductive substrate 100 may be used or processed according to practical requirements, which is not limited herein.
Based on the same inventive concept, the present application also provides an electronic device including the transparent conductive substrate 100 described above. By using the transparent conductive substrate 100, the transparent conductive substrate 100 has transparency and interlayer bonding force, and has better conductive performance, thus improving the performance of electronic devices.
Based on the same inventive concept, the application also provides electronic equipment comprising the electronic device. By using the electronic device with better performance, the performance of the electronic device is improved.
Referring to fig. 3 to 12, in the method for manufacturing a transparent conductive substrate 100 according to the embodiment of the present application, a solution containing metal complex ions c is coated on a transparent substrate 110, a seed layer 120 is formed after the coating on the transparent substrate 110 is cured, a metal layer 130 is electroplated on the seed layer 120, and the metal layer 130 and the seed layer 120 are etched to form a metal wire layer w, thereby forming the transparent conductive substrate 100. The seed layer 120 formed by curing the metal complex ion c solution has better adhesion with the transparent substrate 110 and better combination with the metal layer 130, thereby providing stable adhesion between the metal layer 130 and the transparent substrate 110. Meanwhile, the transparency of the transparent base material 110 is not affected during the manufacturing process, so that the transparency of the transparent conductive substrate 100 is ensured while the interlayer adhesion stability of the transparent conductive substrate 100 is considered.
The surface morphology of the seed layer 120 formed by solidifying the solution of the metal complex ion c is smoother, and the crystal structure is compact. Considering the skin effect of electrons, the seed layer 120 in the present application has smaller roughness, the electron distribution depth is greater than the surface roughness, the signal transmission path is shorter, and the electron loss is smaller. In addition, the solution of the metal complex ion c does not need to be added with a surfactant or an additive, so that no organic resin remains, the influence on the optical performance of the transparent substrate 110 caused by the residue of the organic resin is avoided, and the performance of the transparent conductive substrate 100 is further improved.
According to the transparent conductive substrate 100 provided by the application, the seed layer 120 is used as the connecting layer between the transparent substrate 110 and the metal layer 130, so that the adhesive force between the metal layer 130 and the transparent substrate 110 can be reliably improved. In addition, the transparency of the transparent conductive substrate 110 of the transparent conductive substrate 100 manufactured by the manufacturing method of the transparent conductive substrate 100 is not affected, and the transparent conductive substrate 100 can achieve both interlayer bonding force and transparency. In manufacturing an electronic device, since the size of components tends to be small, it is difficult to spot tin manually, and the benefit can be effectively improved by forming the tin layer 140 by means of electroplating. By using the transparent conductive substrate 100 of the present application, the performance of electronic devices and electronic apparatuses is also improved.
It should be noted that some of the technical solutions described above may be implemented as independent embodiments in the actual implementation process, or may be implemented as combined embodiments by combining them with each other. Some of the technical solutions described above are exemplary solutions, and specific how to implement the combination, and may be selected according to actual needs, and embodiments of the present application are not limited specifically. In addition, in describing the foregoing embodiments of the present application, the different embodiments are described in a corresponding order based on the idea of convenience in description, for example, the order is preset according to the requirements in the actual implementation process, and the execution order of the different embodiments is not limited. Accordingly, in an actual implementation, if multiple embodiments provided by the embodiments of the present application are required to be implemented, the order of execution provided when the embodiments are set forth according to the present application is not necessarily required, but the order of execution between different embodiments may be arranged according to the requirements.
It should be understood that, although the steps in the flowchart of fig. 3 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in fig. 3 may include a plurality of steps or stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily sequential, but may be performed in rotation or alternatively with at least a portion of the steps or stages in other steps or other steps.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims (11)

1. A method for manufacturing a transparent conductive substrate, the method comprising:
coating a solution containing metal complex ions on a transparent substrate to form a coating;
curing the coating to form a seed layer;
forming a metal layer on the seed layer through an electroplating process;
and etching the metal layer and the seed layer through an etching process to form a metal wire layer on the transparent substrate, thereby forming the transparent conductive substrate.
2. The method of claim 1, wherein the curing the coating to form a seed layer, in particular, comprises:
the metal complex ions are reduced by a reduction process and deposited on the transparent substrate to form the seed layer.
3. The method of manufacturing a transparent conductive substrate according to claim 1, wherein after the metal layer and the seed layer are etched by an etching process to form a metal wire layer on the transparent substrate, the method further comprises the steps of:
tin is plated on the metal wire layer to form a tin layer.
4. The method of any one of claims 1-3, wherein the metal complex ion is one of gold complex ion, platinum complex ion, silver complex ion, mercury complex ion, copper complex ion, lead complex ion, tin complex ion, nickel complex ion, and cobalt complex ion.
5. The method of manufacturing a transparent conductive substrate according to any one of claims 1 to 3, wherein the material of the transparent base material is one of transparent polyimide, polyethylene terephthalate, cyclic olefin polymer, polyethylene naphthalate, and polymethyl methacrylate.
6. A method of fabricating a transparent conductive substrate according to any one of claims 1 to 3, wherein the etching process is a wet etching process.
7. The method according to any one of claims 1 to 3, wherein a thickness dimension of the metal layer in the first direction is 10 μm or more.
8. A transparent conductive substrate manufactured by the manufacturing method of the transparent conductive substrate according to any one of claims 1 to 7, wherein the transparent conductive substrate comprises the transparent base material, the seed layer, and the metal layer laminated in a first direction.
9. The transparent conductive substrate of claim 8, further comprising a tin layer disposed on the metal layer along the first direction.
10. An electronic device comprising the transparent conductive substrate according to claim 8 or 9.
11. An electronic device comprising the electronic device of claim 10.
CN202310403358.8A 2023-04-14 2023-04-14 Transparent conductive substrate, manufacturing method thereof, electronic device and electronic equipment Pending CN116798954A (en)

Priority Applications (1)

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CN202310403358.8A CN116798954A (en) 2023-04-14 2023-04-14 Transparent conductive substrate, manufacturing method thereof, electronic device and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310403358.8A CN116798954A (en) 2023-04-14 2023-04-14 Transparent conductive substrate, manufacturing method thereof, electronic device and electronic equipment

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CN116798954A true CN116798954A (en) 2023-09-22

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