CN116794943A - De-glue solution for integrated circuit and preparation method thereof - Google Patents
De-glue solution for integrated circuit and preparation method thereof Download PDFInfo
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- CN116794943A CN116794943A CN202310200614.3A CN202310200614A CN116794943A CN 116794943 A CN116794943 A CN 116794943A CN 202310200614 A CN202310200614 A CN 202310200614A CN 116794943 A CN116794943 A CN 116794943A
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000003292 glue Substances 0.000 title description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims abstract description 81
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 70
- 239000002904 solvent Substances 0.000 claims abstract description 54
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims abstract description 30
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 20
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229920005862 polyol Polymers 0.000 claims abstract description 17
- 150000003077 polyols Chemical class 0.000 claims abstract description 17
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims description 27
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 23
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 18
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 9
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 8
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 claims description 8
- 239000008096 xylene Substances 0.000 claims description 7
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 claims description 4
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 claims description 4
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 4
- 239000012467 final product Substances 0.000 claims description 4
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004210 ether based solvent Substances 0.000 claims description 2
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 claims description 2
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 claims description 2
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 5
- 231100000053 low toxicity Toxicity 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 4
- 238000009835 boiling Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 14
- 239000000126 substance Substances 0.000 description 13
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
Abstract
The invention provides a photoresist removing solution for an integrated circuit and a preparation method thereof, and belongs to the technical field of integrated circuits. The preparation method comprises the following steps: 20-25 parts of benzene solvent, 12-15 parts of acrylic ester solvent, 7-12 parts of polyalcohol, 5-10 parts of ether solvent and 12-15 parts of chloroform. The photoresist removing liquid for the integrated circuit has excellent dissolving effect on various types of photoresist, low toxicity and proper volatility, can effectively remove redundant photoresist adhered in an edge photoresist removing process and the like in a short time, has wide raw material sources, simple preparation method, good photoresist removing effect and low toxicity, and the polyol has higher boiling point, so that the volatility of the photoresist removing liquid is reduced, and the influence on the environment is lower.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a photoresist removing solution for an integrated circuit and a preparation method thereof.
Background
In the processing of semiconductor wafers (typically silicon wafers), the wafers must be clean and particle-free to ensure process performance. In the wafer processing, the patterning wafer with Photoresist (Photoresist) pattern is etched in very frequent and important steps, and many byproducts such as Si-Cl are formed after the plasma etching of the Photoresist wafer 2 -O/Si-Br 2 -O/CFx, etc. These substances mainly exist in the form of photoresist residues, and can become passivation substances on the surface of a wafer pattern or even on the side wall, so that the wafer is polluted, the next process is further affected, and even the final defect of a device is caused, so that the device cannot reach the designed device characteristics and cannot work normally.
Therefore, the method is very important for effectively removing the residual photoresist after the wafer etching, and can ensure zero damage of the wafer substrate or the pattern, increase the cleaning efficiency and reduce the defects while ensuring the complete and effective removal of the residual photoresist.
In the process of cleaning wafers to remove residual photoresist and other contaminants, the conventional cleaning method is to directly use standard RCA wet chemical cleaning. In a standard RCA wet chemical cleaning process, the following chemical solutions are generally used to clean and remove the corresponding substances:
a) SPM (H) at 120 DEG C 2 SO 4 /H 2 O 2 4:1) removing metal impurity organic matters and photoresist;
b) DHF (HF/H) at about 20 ℃ 2 O, 1:100) removing natural oxides and metal impurities;
c) APM (NH) at 70-90 DEG C 4 OH/H 2 O 2 UPW, 1:1:5) to remove particulate and organic contamination;
d) HPM (HCl/H) at 70-90deg.C 2 O 2 UPW, 1:1:6) to remove inorganic metal ions.
Standard RCA wet chemical cleaning has many cleaning steps, long cleaning period, and about fifty minutes for a single cleaning process to be completed. In addition, standard RCA wet chemical cleaning requires the use of large amounts of strong acids, bases and oxidizing agents to operate, which creates a potential safety hazard to operators.
In order to improve the cleaning efficiency, the prior art has shown that the residual photoresist is removed by adopting a photoresist remover ashing process, and then the incomplete photoresist on the surface of the wafer and other residual substances generated in the photoresist removing process are removed by adopting the RCA wet chemical cleaning method. The photoresist remover is used for removing the photoresist by reacting oxygen atoms with the photoresist in a plasma environment, and because the main component of the photoresist is hydrocarbon, the oxygen atoms quickly react with the photoresist to generate volatilized carbon monoxide, carbon dioxide, water vapor and the like, and then the volatilized carbon monoxide, carbon dioxide, water vapor and the like are pumped away by a vacuum system. In photoresist stripping in the photoresist stripper ashing process, a time control method is adopted for the photoresist stripper to control the removal of photoresist and residual substances on the surface of a wafer.
In the process of realizing the invention, the inventor finds that the RCA wet chemical cleaning is adopted after the photoresist is removed by adopting the photoresist remover ashing process, and the cleaning efficiency can be improved, but in the RCA wet chemical cleaning process, the use of a large amount of strong acid, strong alkali and strong oxidant also can cause hidden danger to operators and possibly cause damage to the wafer.
Disclosure of Invention
The invention aims to provide a photoresist remover for an integrated circuit and a preparation method thereof, which have excellent dissolution effect, low toxicity and proper volatility, and can effectively remove redundant photoresist adhered in an edge photoresist removing process and the like in a short time.
The technical scheme of the invention is realized as follows:
the invention provides a photoresist removing solution for an integrated circuit, which comprises the following components: benzene solvents, acrylic solvents, polyols, ether solvents and chloroform.
As a further improvement of the invention, the invention is prepared from the following raw materials: 20-25 parts of benzene solvent, 12-15 parts of acrylic ester solvent, 7-12 parts of polyalcohol, 5-10 parts of ether solvent and 12-15 parts of chloroform.
As a further improvement of the invention, the invention is prepared from the following raw materials: 22 parts of benzene solvent, 13 parts of acrylic ester solvent, 10 parts of polyol, 7 parts of ether solvent and 14 parts of chloroform.
As a further improvement of the present invention, the benzene solvent is at least one selected from toluene, benzene, xylene, and ethylbenzene.
As a further improvement of the invention, the benzene solvent is a mixture of toluene and xylene, and the mass ratio is 5-7:2.
As a further improvement of the present invention, the acrylic solvent is at least one selected from the group consisting of methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, methyl methacrylate, ethyl methacrylate, and butyl methacrylate.
As a further improvement of the invention, the acrylic ester solvent is a mixture of butyl acrylate and methyl methacrylate, and the mass ratio is 3-5:7.
As a further improvement of the invention, the polyol is a mixture of pentaerythritol and glycerol, and the mass ratio is 4-6:1.
As a further improvement of the invention, the ether solvent is a mixture of diethyl ether and bisphenol A diethanol ether, and the mass ratio is 2-3:5.
The invention further provides a preparation method of the photoresist stripping solution for the integrated circuit, which comprises the following steps: mixing benzene solvent, acrylic ester solvent, polyalcohol, ether solvent and chloroform, heating to 35-45deg.C, stirring for 15-20min, and cooling to room temperature to obtain the final product.
The invention has the following beneficial effects: the photoresist remover for the integrated circuit has excellent dissolving effect on various types of photoresist, has low toxicity and proper volatility, and can effectively remove redundant photoresist adhered in an edge photoresist removing process and the like in a short time.
The photoresist removing liquid for the integrated circuit has the advantages of wide source of raw materials, simple preparation method, good photoresist removing effect, low toxicity, higher boiling point of the polyol, reduced volatility of the photoresist removing liquid and lower influence on environment.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The embodiment provides a photoresist removing solution for an integrated circuit.
The raw materials comprise the following components in parts by weight: 20 parts of benzene solvent, 12 parts of acrylic ester solvent, 7 parts of polyol, 5 parts of ether solvent and 12 parts of chloroform.
The benzene solvent is a mixture of toluene and xylene, and the mass ratio is 5:2.
The acrylic ester solvent is a mixture of butyl acrylate and methyl methacrylate, and the mass ratio is 3:7.
The polyol is a mixture of pentaerythritol and glycerol, and the mass ratio is 4:1.
The ether solvent is a mixture of diethyl ether and bisphenol A diethanol ether, and the mass ratio is 2:5.
The preparation method comprises the following steps: mixing benzene solvent, acrylic ester solvent, polyalcohol, ether solvent and chloroform, heating to 35deg.C, stirring for 15min, and cooling to room temperature to obtain the final product.
Example 2
The embodiment provides a photoresist removing solution for an integrated circuit.
The raw materials comprise the following components in parts by weight: 25 parts of benzene solvent, 15 parts of acrylic ester solvent, 12 parts of polyol, 10 parts of ether solvent and 15 parts of chloroform.
The benzene solvent is a mixture of toluene and xylene, and the mass ratio is 7:2.
The acrylic ester solvent is a mixture of butyl acrylate and methyl methacrylate, and the mass ratio is 5:7.
The polyol is a mixture of pentaerythritol and glycerol, and the mass ratio is 6:1.
The ether solvent is a mixture of diethyl ether and bisphenol A diethanol ether, and the mass ratio is 3:5.
The preparation method comprises the following steps: mixing benzene solvent, acrylic ester solvent, polyalcohol, ether solvent and chloroform, heating to 45deg.C, stirring for 20min, and cooling to room temperature to obtain the final product.
Example 3
The embodiment provides a photoresist removing solution for an integrated circuit.
The raw materials comprise the following components in parts by weight: 22 parts of benzene solvent, 13.5 parts of acrylic ester solvent, 10 parts of polyol, 7 parts of ether solvent and 13.5 parts of chloroform.
The benzene solvent is a mixture of toluene and dimethylbenzene, and the mass ratio is 6:2.
The acrylic ester solvent is a mixture of butyl acrylate and methyl methacrylate, and the mass ratio is 4:7.
The polyol is a mixture of pentaerythritol and glycerol, and the mass ratio is 5:1.
The ether solvent is a mixture of diethyl ether and bisphenol A diethanol ether, and the mass ratio is 2.5:5.
The preparation method comprises the following steps: mixing benzene solvent, acrylic ester solvent, polyalcohol, ether solvent and chloroform, heating to 40deg.C, stirring for 17min, and cooling to room temperature to obtain integrated circuit gelatin removing solution.
Example 4
The difference compared to example 3 is that the benzene solvent is toluene alone.
Example 5
The difference compared to example 3 is that the benzene solvent is a single xylene.
Example 6
The difference compared to example 3 is that the acrylic solvent is a single butyl acrylate.
Example 7
The difference compared to example 3 is that the acrylic solvent is a single methyl methacrylate.
Example 8
The difference compared to example 3 is that the polyol is a single pentaerythritol.
Example 9
The difference compared to example 3 is that the polyol is a single glycerol.
Example 10
The difference compared to example 3 is that the ether solvent is a single diethyl ether.
Example 11
The difference compared to example 3 is that the ether solvent is a single bisphenol a diethanol ether.
Comparative example 1
In comparison with example 3, the difference is that no benzene solvent was added.
Comparative example 2
The difference compared with example 3 is that no acrylic solvent was added.
Comparative example 3
The difference compared to example 3 is that no polyol is added.
Comparative example 4
In comparison with example 3, the difference is that no ether solvent was added.
Test example 1 Performance test
1. Edge Photoresist removal Performance evaluation (EBR evaluation)
The oxidized 8 inch silica gel substrates were immersed in two baths containing a hydrogen peroxide/sulfuric acid mixture for 5 minutes, respectively, and then rinsed with ultrapure water. Next, spin coating (2000 rpm) was performed on the photoresist solutions for integrated circuits in the respective examples and comparative examples after spin-drying the substrate in a spin dryer, thereby performing a pre-wetting process required for RRC coating.
Next, photoresists for spin-coating a hard mask, each of which is shown in table 11 below, were spin-coated (adjusted to a predetermined thickness by rotating at 1500rpm for 25 seconds after rotating at 300rpm for about 3 seconds) on the pre-wet substrate to form a photosensitive film having a corresponding thickness. Further, experiments for removing the surplus edge photoresist adhered to the edge portion of the substrate were performed using the thinner compositions in the respective examples and comparative examples.
At this time, each of the diluent compositions was supplied from a pressurizing tub provided with a pressure gauge (pressurizing pressure of about 1.0 kgf) and sprayed through an EBR nozzle (composition flow rate of 15 cc/min).
In the evaluation of the removal performance of the edge photoresist, the mark that the uniformity of the EBRline after the removal of the edge photoresist is uniform and consistent is excellent, the mark that the uniformity of the EBRline after the removal of the edge photoresist is more than 80% is good, the mark that the uniformity of the EBRline after the removal of the edge photoresist is more than 50% and less than 80% is not full is delta, the mark that the uniformity of the EBRline after the removal of the edge photoresist is more than 20% and less than 50% is not full is good, and the mark that the residue phenomenon is generated at the edge part is X.
2. Evaluation of coating uniformity of Photoresist (RRC evaluation)
Whether or not the photosensitive film was uniformly coated on the front surface of the substrate was evaluated by the following method. The oxidized 8 inch silica gel substrates were immersed in two baths containing a hydrogen peroxide/sulfuric acid mixture for 5 minutes, respectively, and then rinsed with ultrapure water. Next, spin coating (2000 rpm) was performed on the photoresist solutions for integrated circuits in the respective examples and comparative examples after spin-drying the substrate in a spin dryer, thereby performing a pre-wetting process required for RRC coating. At this time, each of the diluent compositions was supplied from a pressurizing tub provided with a pressure gauge (pressurizing pressure: 1.0 kgf) and sprayed through an EBR nozzle (composition flow rate: 15 cc/min).
The mark of uniform and consistent coating uniformity of the photosensitive film was marked as o, the good state of the coating uniformity of the photosensitive film of 90% or more was marked as delta, and the mark of the defective coating at the edge portion of the dry film was marked as X.
The results are shown in Table 1.
TABLE 1
As shown in the table above, the photoresist stripping solution for integrated circuits prepared in examples 1-3 of the present invention has good comprehensive properties.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (10)
1. The photoresist stripping solution for the integrated circuit is characterized by comprising the following components: benzene solvents, acrylic solvents, polyols, ether solvents and chloroform.
2. The photoresist remover for integrated circuits as claimed in claim 1, wherein the photoresist remover is prepared from the following raw materials: 20-25 parts of benzene solvent, 12-15 parts of acrylic ester solvent, 7-12 parts of polyalcohol, 5-10 parts of ether solvent and 12-15 parts of chloroform.
3. The photoresist remover for integrated circuits as claimed in claim 2, wherein the photoresist remover is prepared from the following raw materials: 22 parts of benzene solvent, 13 parts of acrylic ester solvent, 10 parts of polyol, 7 parts of ether solvent and 14 parts of chloroform.
4. The integrated circuit photoresist stripper according to claim 1, wherein the benzene solvent is at least one selected from toluene, benzene, xylene and ethylbenzene.
5. The integrated circuit photoresist stripper according to claim 4, wherein the benzene solvent is a mixture of toluene and xylene in a mass ratio of 5-7:2.
6. The integrated circuit photoresist remover according to claim 1, wherein the acrylic solvent is at least one selected from the group consisting of methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, methyl methacrylate, ethyl methacrylate, and butyl methacrylate.
7. The integrated circuit photoresist remover according to claim 6, wherein the acrylic solvent is a mixture of butyl acrylate and methyl methacrylate in a mass ratio of 3-5:7.
8. The integrated circuit photoresist stripper according to claim 1, wherein the polyol is a mixture of pentaerythritol and glycerol in a mass ratio of 4-6:1.
9. The photoresist remover for integrated circuits according to claim 1, wherein said ethereal solvent is a mixture of diethyl ether and bisphenol a diethanol ether in a mass ratio of 2-3:5.
10. A method of preparing a photoresist stripper for an integrated circuit according to any one of claims 1 to 9, comprising the steps of: mixing benzene solvent, acrylic ester solvent, polyalcohol, ether solvent and chloroform, heating to 35-45deg.C, stirring for 15-20min, and cooling to room temperature to obtain the final product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310200614.3A CN116794943A (en) | 2023-03-06 | 2023-03-06 | De-glue solution for integrated circuit and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310200614.3A CN116794943A (en) | 2023-03-06 | 2023-03-06 | De-glue solution for integrated circuit and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116794943A true CN116794943A (en) | 2023-09-22 |
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| CN202310200614.3A Pending CN116794943A (en) | 2023-03-06 | 2023-03-06 | De-glue solution for integrated circuit and preparation method thereof |
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| Country | Link |
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| CN (1) | CN116794943A (en) |
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