CN116782820A - ICP and ICT monitor based on optical MEMS - Google Patents
ICP and ICT monitor based on optical MEMS Download PDFInfo
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- CN116782820A CN116782820A CN202180076634.3A CN202180076634A CN116782820A CN 116782820 A CN116782820 A CN 116782820A CN 202180076634 A CN202180076634 A CN 202180076634A CN 116782820 A CN116782820 A CN 116782820A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 95
- 238000001228 spectrum Methods 0.000 claims abstract description 34
- 239000000523 sample Substances 0.000 claims abstract description 22
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000985 reflectance spectrum Methods 0.000 claims abstract description 20
- 238000007917 intracranial administration Methods 0.000 claims abstract description 14
- 230000000737 periodic effect Effects 0.000 claims abstract description 13
- 239000000835 fiber Substances 0.000 claims description 45
- 239000012528 membrane Substances 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 7
- 230000029058 respiratory gaseous exchange Effects 0.000 claims description 4
- 239000013307 optical fiber Substances 0.000 description 13
- 101100370021 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) TOF2 gene Proteins 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 210000005013 brain tissue Anatomy 0.000 description 2
- 238000002591 computed tomography Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000001175 cerebrospinal fluid Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002595 magnetic resonance imaging Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000013421 nuclear magnetic resonance imaging Methods 0.000 description 1
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Abstract
The application discloses an intracranial pressure (ICP) and intracranial temperature (ICT) monitor based on optical MEMS, comprising: a broadband light source and tunable filter (TOF), an optical etalon, a plurality of optical receivers, a plurality of optical couplers, a probe; wherein the probe comprises an intracranial pressure (ICP) sensor and an intracranial temperature (ICT) sensor; ICP is obtained by trough wavelength values of the reflection spectrum of the ICP sensor, which are obtained by comparing with their periodic spectrum by using an optical etalon having an absolute wavelength mark; ICT is obtained from the peak wavelength value of the reflectance spectrum of the ICT sensor by comparing its periodic spectrum with an optical etalon having an absolute wavelength signature. The application can accurately monitor ICP and ICT.
Description
The present application claims priority from U.S. provisional patent application No.63/113883 filed 11/15 in 2020 and U.S. provisional patent application No.63/113882 filed 11/15 in 2020. The entire contents of this application are incorporated by reference into the present application.
Technical Field
The application relates to the field of neurosurgery, in particular to an intracranial pressure (ICP) and intracranial temperature (ICT) monitor based on optical MEMS.
Background
Within the cranium, there are brain tissue and cerebrospinal fluid and blood. These three materials maintain stability of the ICP. All three materials are incompressible. If not treated in time, the high intracranial pressure can cause permanent deformation of brain tissues of patients and cause death. Invasive ICP monitoring is a gold standard in the medical community.
Historically the earliest invasive ICP monitors were made from a 1.5 meter long tube connected air bubble. The intracranial placed air bubbles induce ICP and send a pressure signal through the catheter. On the other side of the tube, a pressure sensor is used to monitor the pressure. However, the bubbles are too large to be easily handled.
Piezoelectric ICP monitors and piezoresistive ICP monitors were invented later. Both types of electrically based MEMS ICP monitors are subject to electromagnetic wave interference. Under Computed Tomography (CT) or Magnetic Resonance Imaging (MRI), the probe has unexpected false images. More seriously, the large current generated by the strong electromagnetic waves of the nuclear magnetic resonance imaging can move the probe of the head and destroy the probe. To avoid this, the implanted probe has to be removed from the patient's head before making a nuclear magnetic resonance, which is very cumbersome.
ICP monitors developed in recent years are based on optical MEMS. The light is guided by an optical fiber and irradiated onto a film of the ICP sensor. The ICP changes the shape of the film so that the optical power reflected by the film changes. By monitoring the optical power, the system can determine ICP. The ICP monitor is not affected by electromagnetic waves. However, accidental bending of the fiber may occur occasionally, changing the optical power, thereby interfering with the ICP to be monitored.
To date, all ICT sensors are electrical based thermistors. Therefore, there is an urgent need to develop a novel optical MEMS-based ICP and ICT monitor that does not require electricity, and does not depend on the energy of light, so that ICP and ICT monitoring is not affected by electromagnetic waves or bending of optical fibers.
Disclosure of Invention
The application provides an ICP and ICT monitor based on an optical MEMS (micro electro mechanical system), which aims to solve the problem that the monitoring of ICP and ICT in the prior art is influenced by electromagnetic waves or optical fiber bending.
An optical MEMS-based ICP and ICT monitor provided by an embodiment of the application includes:
a broadband light source and tunable filter (TOF), an optical etalon, a plurality of optical receivers, a plurality of optical couplers, a probe;
wherein the probe comprises an ICP sensor and an ICT sensor; ICP is obtained by trough wavelength values of the reflection spectrum of the ICP sensor, which are obtained by comparing with their periodic spectrum by using an optical etalon having an absolute wavelength mark;
ICT is obtained by the peak wavelength value of the reflection spectrum of the ICT sensor, and the peak wavelength value is obtained by comparing the optical etalon with the periodic spectrum by adopting an optical etalon with an absolute wavelength mark;
in the above-described optical MEMS-based ICP and ICT monitor of the present application, the optical etalon is provided with an absolute wavelength marker for generating a periodic spectrum as a scale for measuring an absolute trough wavelength value or a peak wavelength value in a reflection spectrum of the ICP sensor or the ICT sensor.
In the ICP and ICT monitor based on the optical MEMS, the ICP sensor and the ICT sensor are integrated in one probe and are respectively connected with respective single-mode fibers, and the two optical fibers and the sensors connected with the two optical fibers form a parallel structure.
In the ICP and ICT monitor based on the optical MEMS, the ICP sensor and the ICT sensor are integrated in one probe and are connected through a single-mode fiber, and the single-mode fiber and the two sensors connected with the single-mode fiber form a serial structure.
In the ICP and ICT monitor based on the optical MEMS, the ICP sensor is of an MEMS resonant cavity structure and consists of a single-mode fiber, an MEMS membrane and a glass substrate, and the end face of the single-mode fiber is used as a reflector; the MEMS membrane is slightly deformed by ICP; the trough wavelength values of the reflectance spectrum of the ICP sensor are used to monitor ICP.
In the ICP and ICT monitor based on the optical MEMS, the ICP sensor is of an MEMS resonant cavity structure and consists of a single-mode lens optical fiber, an MEMS membrane and a glass substrate, and the end face of the single-mode lens optical fiber is used as a reflecting mirror; the MEMS membrane is slightly deformed by ICP; the trough wavelength values of the reflectance spectrum of the ICP sensor are used to monitor ICP.
In the ICP and ICT monitor based on the optical MEMS, the ICP sensor is of an MEMS resonant cavity structure and consists of a single-mode fiber collimator, an MEMS membrane and a glass substrate, and a lens plane of the single-mode fiber collimator is used as a reflecting mirror; the MEMS membrane is slightly deformed by ICP; the trough wavelength values of the reflectance spectrum of the ICP sensor are used to monitor ICP.
In the ICP and ICT monitor based on the optical MEMS, the ICT sensor is an optical fiber Bragg grating; the peak wavelength value of the reflectance spectrum of the ICT sensor is used for monitoring ICT.
In the ICP and ICT monitor based on the optical MEMS, the ICT sensor is of an MEMS resonant cavity structure and consists of a single-mode fiber, an MEMS membrane and a glass substrate, and the end face of the single-mode fiber is used as a reflector; the MEMS membrane is slightly deformed by ICP; the trough wavelength values of the reflectance spectra were used to monitor ICT.
In the ICP and ICT monitor based on the optical MEMS, the ICT sensor is of a resonant cavity structure and consists of a single-mode fiber, a second reflector and a glass substrate, and the end face of the single-mode fiber is used as the reflector; the cavity length of the resonant cavity structure varies with ICT; the trough wavelength values of the reflectance spectra were used to monitor ICT.
In the above-described optical MEMS-based ICP and ICT monitors of the present application, the optical coupler is used to connect all optical elements and sensors.
In the above-described optical MEMS-based ICP and ICT monitors of the present application, the optical coupler may be replaced with an optical circulator.
In the above described optical MEMS based ICP and ICT monitors of the application, the combination of the broadband light source and the TOF may be replaced by a tunable laser source.
According to the optical MEMS-based ICP and ICT monitor of the present application, the broadband light source reaches the TOF along a single mode fiber and is scanned. The scanned broadband light source is then split into two light paths. One of the light paths leads to an optical MEMS sensor to obtain a trough wavelength value or a peak wavelength value of the transmission, reflection or interference spectrum. The other path leads to an optical etalon to obtain a periodic spectrum with absolute wavelength marks as a scale. By comparison with the scale, the trough wavelength value or the peak wavelength value can be accurately measured. Thereby obtaining the parameter to be monitored.
Drawings
Fig. 1 is a schematic structural diagram of an ICP and ICT monitor based on optical MEMS according to an embodiment of the application.
FIG. 2 is a cross-sectional view of a probe integrated with an ICP sensor and an ICT sensor based on FBG provided by an embodiment of the application. Fig. 3 is a cross-sectional view of an ICP sensor with MEMS membrane and single mode optical fiber provided in accordance with an embodiment of the application with an end surface that acts as a mirror for the MEMS resonant cavity.
FIG. 4 is a cross-sectional view of an ICT sensor constructed of fiber Bragg gratings according to one embodiment of the present application.
Fig. 5A and 5B illustrate a reflection spectrum of an ICP sensor and a reflection spectrum of an ICT sensor according to an embodiment of the present application. Reference numerals in the specification are as follows:
1. a broadband light source; 2. a Tunable Optical Filter (TOF); 3. an optical etalon; 4. an optical receiver; 5. an optical coupler;
6. a probe; 61. an intracranial pressure (ICP) sensor; 62. an intracranial temperature (ICT) sensor; 611. a single mode optical fiber; 6111. an optical fiber end face; mems membrane; 613. a glass tube.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects solved by the application more clear, the application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In one embodiment, as shown in fig. 1, a schematic structural diagram of an ICP and ICT monitor based on optical MEMS according to an embodiment of the application includes:
a broadband light source 1 and a tunable filter 2 (TOF 2), an optical etalon 3, a plurality of optical receivers 4, a plurality of optical couplers 5, a probe 6;
wherein the probe 6 comprises an intracranial pressure (ICP) sensor 61 and an intracranial temperature (ICT) sensor 62;
ICP is obtained by a trough wavelength value of the reflection spectrum of the ICP sensor 61, which is obtained by comparing with a periodic spectrum by using the optical etalon 3 having an absolute wavelength mark;
ICT is obtained by peak wavelength values of the reflection spectrum of the ICT sensor 62, which are obtained by comparing with the periodic spectrum using an optical etalon 3 having an absolute wavelength signature;
the optical etalon 3 is used to generate a periodic spectrum as a scale to measure absolute trough wavelength values or peak wavelength values in the reflection spectrum of the ICP sensor 61 or ICT sensor 62.
Specifically, the broadband light source passes through the single-mode optical fiber 611 and is scanned by the TOF2, and then the scanned light is split into two optical paths by the optical coupler 5. One of the broadband light scanned by the TOF2 is irradiated to the ICP sensor 61 and ICT sensor 62, and is reflected back to the two optical receivers 4 by means of the plurality of optical couplers 5. Either a trough wavelength value or a peak wavelength value of the two reflection spectra of the ICP sensor 61 and the ICT sensor 62 can be obtained. The other scanned broadband light is directed to the optical etalon 3 and is reflected back to the optical receiver 4 by means of a plurality of optical couplers 5, thereby receiving a periodic spectrum with absolute wavelength marks as a scale. By comparing the trough wavelength value or the peak wavelength value to the scale, the system can determine the wavelength. Thereby obtaining the parameter to be monitored.
In one embodiment, ICP sensor 61 is a MEMS resonant cavity structure, consisting of single mode fiber 611 and MEMS film 612, glass tube 613; the end face 6111 of the single-mode fiber 611 serves as a mirror; MEMS membrane 612 is slightly deformed by ICP; the trough wavelength value of the reflection spectrum of the ICP sensor 61 is used to monitor ICP; ICT sensor 62 is a fiber Bragg grating; the peak wavelength value of the reflectance spectrum of ICT sensor 62 is used to monitor ICT.
As shown in fig. 2, which is a cross-sectional view of the probe 6, is integrated by an FBG-based ICP sensor 61 and an ICT sensor 62. The ICP sensor 61 is a MEMS resonator structure, and is composed of an end surface 6111 of a single-mode fiber 611, a MEMS film, and a glass tube 613, and the MEMS film 612 is deformed according to the change of ICP, so that the trough wavelength value of the reflection spectrum of the ICP sensor 61 is changed. ICT sensor 62 is comprised of a fiber bragg grating. The peak wavelength value of the reflectance spectrum of ICT sensor 62 varies with ICT and is used to indicate parameters of ICT.
Similarly, ICT sensor 62 is a MEMS resonant cavity structure, and is composed of a single-mode fiber 611, a MEMS membrane 612, and a glass tube 613, and an end face 6111 of single-mode fiber 611 is used as a reflector; MEMS membrane 612 deforms slightly due to ICT; the trough wavelength values of the reflectance spectra were used to monitor ICT.
ICT sensor 62 has the same structure as ICP sensor 61, with its resonant cavity length varying with temperature.
ICT sensor 62 may also be made of fiber Bragg gratings, where the peak wavelength value of the reflection spectrum of the fiber Bragg grating varies with ICT. By monitoring the wavelength of light, the system can determine the ICT.
In another embodiment, shown in FIG. 3, a cross-sectional view of an ICP sensor 61 is shown with a MEMS film 612 and a single mode fiber 611, with an end face 6111 acting as a mirror for the MEMS resonant cavity. Glass tube 613 supports all components. ICP causes MEMS film 612 to deform slightly, thereby changing the wavelength of wave Gu Bo in the reflected spectrum. By measuring the wavelength, the pressure can be determined.
In another embodiment, shown in FIG. 4, there is a cross-sectional view of an ICT sensor 62 with a fiber Bragg grating in a single mode fiber 611. The ICT sensor 62 is a fiber Bragg grating with a peak shape in the reflection spectrum. When the ICT changes, the peak wavelength value changes. By measuring the wavelength, ICT can be obtained.
In one embodiment, as shown in fig. 5A and 5B, is the shape of the reflectance spectrum of the ICP sensor 61 and the reflectance spectrum of the ICT sensor 62. The valley wavelength value in the reflection spectrum of the ICP sensor 61 is shown in fig. 5A. By calculating the trough wavelength value, the system can obtain the ICP to be monitored. The peak wavelength value of the reflection spectrum of the ICT sensor 62 is shown in fig. 5B. By calculating the peak wavelength value, the system can obtain the ICT to be monitored.
In one embodiment, electronic temperature sensors may be employed to address thermal effects of TOF2, optical etalon 3, and fiber bragg gratings.
In one embodiment, the ICP and ICT monitor, optical coupler 5 connected to the probe, may be replaced by an optical circulator.
In one embodiment, the combination of broadband light source 1 and TOF2 can be replaced by a tunable laser source.
In other embodiments, the optical MEMS-based ICP and ICT monitors provided by the present application can be used to monitor a set of vital signs, such as heart rate, respiration rate, and the like. Since heart beat or respiration causes ICP and ICT change, heart rate, respiration rate, etc. can be obtained by analyzing ICP and ICT.
The ICP and ICT monitor based on the optical MEMS and the probe 6 thereof are updated, and the probe 6 is integrated with an ICP sensor 61 based on the optical MEMS and an ICT sensor 62 based on the fiber Bragg grating. All optical elements and optical sensors are connected to a single mode optical fiber 611. The trough wavelength value or peak wavelength value of the transmission, reflection or interference spectrum of the sensor is a function of the ICP or ICT parameter to be monitored. By means of an optical etalon 3 with an absolute wavelength mark, the wavelength can be obtained by comparison with a comb period spectrum. After determining the trough wavelength value or the crest wavelength value, the parameters to be monitored can be obtained.
The above description is only of the preferred embodiments of the present application, and is not intended to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (14)
1. An optical MEMS-based ICP and ICT monitor, comprising:
a broadband light source and tunable filter (TOF), an optical etalon, a plurality of optical receivers, a plurality of optical couplers, a probe;
wherein the probe comprises an intracranial pressure (ICP) sensor and an intracranial temperature (ICT) sensor;
ICP is obtained by trough wavelength values of the reflection spectrum of the ICP sensor, which are obtained by comparing with their periodic spectrum by using an optical etalon having an absolute wavelength mark;
ICT is obtained from the peak wavelength value of the reflectance spectrum of the ICT sensor by comparing its periodic spectrum with an optical etalon having an absolute wavelength signature.
2. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the optical etalon having an absolute wavelength signature is used to generate a periodic spectrum as a scale to measure absolute valley wavelength values or peak wavelength values in the reflectance spectrum of the ICP sensor or ICT sensor.
3. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the ICP sensor and ICT sensor are integrated in a single probe, each connected to a respective single mode fiber, the two fibers and their connected sensors forming a parallel configuration.
4. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the ICP sensor and the ICT sensor are integrated in a single probe and connected by a single mode fiber, the single mode fiber and its connected two sensors forming a series arrangement.
5. The ICP and ICT monitor based on optical MEMS according to claim 1, wherein the ICP sensor is of MEMS resonant cavity structure, composed of a single-mode fiber and MEMS film, glass substrate, and the end face of the single-mode fiber is used as a reflector; the MEMS membrane is slightly deformed by ICP; the trough wavelength values of the reflectance spectrum of the ICP sensor are used to monitor ICP.
6. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the ICP sensor is of MEMS resonant cavity structure consisting of a single mode lens fiber and MEMS film, glass substrate, and wherein the end face of the single mode lens fiber acts as a mirror; the MEMS membrane is slightly deformed by ICP; the trough wavelength values of the reflectance spectrum of the ICP sensor are used to monitor ICP.
7. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the ICP sensor is of MEMS resonant cavity structure, consisting of a single mode fiber collimator and MEMS film, glass substrate, and the lens plane of the single mode fiber collimator acts as a mirror; the MEMS membrane is slightly deformed by ICP; the trough wavelength values of the reflectance spectrum of the ICP sensor are used to monitor ICP.
8. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the ICT sensor is a fiber bragg grating; the peak wavelength value of the reflectance spectrum of the ICT sensor is used for monitoring ICT.
9. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the ICT sensor is a MEMS resonant cavity structure consisting of a single mode fiber and a MEMS membrane, a glass substrate, and an end face of the single mode fiber acts as a mirror; the MEMS membrane is slightly deformed by ICP; the trough wavelength values of the reflectance spectra were used to monitor ICT.
10. The ICP and ICT monitor based on optical MEMS according to claim 1, wherein the ICT sensor is a resonant cavity structure, and is composed of a single-mode fiber, a second reflector and a glass substrate, and an end face of the single-mode fiber is used as a reflector; the cavity length of the resonant cavity structure varies with ICT; the trough wavelength values of the reflectance spectra were used to monitor ICT.
11. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the optical coupler is configured to connect all optical elements and sensors.
12. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the optical coupler is replaced by an optical circulator.
13. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the combination of the broadband light source and the TOF is replaced by a tunable laser source.
14. The optical MEMS-based ICP and ICT monitor of claim 1 wherein the optical MEMS-based ICP and ICT monitor is adapted to analyze ICP and ICT to obtain a set of vital signs including at least heart rate and respiration rate.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063113883P | 2020-11-15 | 2020-11-15 | |
| US63/113882 | 2020-11-15 | ||
| US63/113883 | 2020-11-15 | ||
| PCT/US2021/059042 WO2022103997A1 (en) | 2020-11-15 | 2021-11-12 | Optical mems based intracranial pressure and intracranial temperature monitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116782820A true CN116782820A (en) | 2023-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180076634.3A Pending CN116782820A (en) | 2020-11-15 | 2021-11-12 | ICP and ICT monitor based on optical MEMS |
| CN202180076623.5A Pending CN117157512A (en) | 2020-11-15 | 2021-11-14 | Monitoring system based on optical MEMS |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180076623.5A Pending CN117157512A (en) | 2020-11-15 | 2021-11-14 | Monitoring system based on optical MEMS |
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| CN (2) | CN116782820A (en) |
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- 2021-11-12 CN CN202180076634.3A patent/CN116782820A/en active Pending
- 2021-11-14 CN CN202180076623.5A patent/CN117157512A/en active Pending
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| CN117157512A (en) | 2023-12-01 |
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