CN116779695A - Photoelectric detection structure and photoelectric integrated chip - Google Patents

Photoelectric detection structure and photoelectric integrated chip Download PDF

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Publication number
CN116779695A
CN116779695A CN202210230747.0A CN202210230747A CN116779695A CN 116779695 A CN116779695 A CN 116779695A CN 202210230747 A CN202210230747 A CN 202210230747A CN 116779695 A CN116779695 A CN 116779695A
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layer
main electrode
waveguide
germanium layer
finger electrodes
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曾治国
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Suzhou Paisi Technology Co ltd
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Suzhou Paisi Technology Co ltd
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Priority to CN202210230747.0A priority Critical patent/CN116779695A/en
Priority to TW111135280A priority patent/TW202337045A/en
Priority to PCT/CN2022/132887 priority patent/WO2023168987A1/en
Publication of CN116779695A publication Critical patent/CN116779695A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

The application discloses a photoelectric detection structure and a photoelectric integrated chip, which aim to realize photoelectric conversion by arranging a first doping body and a second doping body in a silicon-based part of a waveguide layer, wherein the first doping body comprises a plurality of first finger electrodes, the second doping body comprises a plurality of second finger electrodes, the plurality of first finger electrodes and the plurality of second finger electrodes are arranged at intervals in a comb-tooth-shaped mutual insertion mode to form a waveguide region, and a germanium layer is arranged above the waveguide region and is contacted with the plurality of first finger electrodes and the plurality of second finger electrodes so as to effectively extract photocurrent flowing into the germanium layer, so that the photoelectric detection structure has higher sensitivity and responsivity.

Description

Photoelectric detection structure and photoelectric integrated chip
Technical Field
The application relates to the technical field of optical communication, in particular to a photoelectric detection structure and a photoelectric integrated chip.
Background
A high-performance Photo Detector (PD) is one of core devices for high-speed optical communication, and a waveguide-type light receiving device has great advantages for high integration, especially for use of a Monitor PD (MPD) at a transmitting end (TX), and converts a monitored optical signal into an electrical signal to be fed back to an optical chip (photonic integrated circuit chip, PIC). The responsivity of the device itself and the dark current must be well behaved in order to be able to measure a relatively low light intensity (uW). In addition, the reliability problem of the MPD presents more challenges for long-term use, such as process stability and device reproducibility.
Thus, improvements are needed for germanium-on-silicon photodetectors.
Disclosure of Invention
The embodiment of the application provides a photoelectric detection structure and a photoelectric integrated chip, which can have higher sensitivity and responsivity.
According to an aspect of the present application, there is provided a photodetection structure including a substrate, a waveguide layer provided on the substrate, and a germanium layer provided on the waveguide layer, the waveguide layer including a silicon-based portion, and first and second doped bodies provided within the silicon-based portion, the first and second doped bodies being different in doping type, the first doped body including a first main electrode and a plurality of first finger electrodes electrically connected to the first main electrode, the second doped body including a second main electrode and a plurality of second finger electrodes electrically connected to the second main electrode, the first and second main electrodes being disposed opposite to each other, and the plurality of first finger electrodes and the plurality of second finger electrodes being arranged at intervals in a comb-like inter-insert form to constitute a waveguide region; the germanium layer is located over the waveguide region and is in contact with the plurality of first finger electrodes and with the plurality of second finger electrodes.
Optionally, a light receiving part is disposed at one side edge of the germanium layer, and the light receiving part is used for optically aligning with an external photoconductor to receive light waves.
Optionally, the main extension direction of the germanium layer is the same as the conduction direction of the light wave on the waveguide region.
Optionally, the projection of the germanium layer at least partially covers the waveguide region in a direction perpendicular to the waveguide layer.
Optionally, in a direction perpendicular to the waveguide layer, the projection of the germanium layer does not overlap with the projection of the first main electrode and with the projection of the second main electrode.
Optionally, the waveguide layer is protruding on a portion of the germanium layer to be used as a light receiving portion, and the light receiving portion and the first doped body and the second doped body are located on the same film layer.
Optionally, the light receiving part further includes a template converter for the introduction of the optical signal.
Optionally, the photodetection structure further includes a first metal contact electrically connected to the first main electrode, and a second metal contact electrically connected to the second main electrode, the first metal contact and the second metal contact being used to derive a photocurrent generated by the germanium layer.
Optionally, the photodetection structure further comprises a passivation layer, which covers the germanium layer and the waveguide layer.
According to another aspect of the present application, an embodiment of the present application provides an optoelectronic integrated chip according to any one of the embodiments of the present application.
The embodiment of the application provides a photoelectric detection structure and a photoelectric integrated chip, which aim to realize photoelectric conversion by arranging a first doping body and a second doping body in a silicon-based part of a waveguide layer, wherein the first doping body comprises a plurality of first finger electrodes, the second doping body comprises a plurality of second finger electrodes, the plurality of first finger electrodes and the plurality of second finger electrodes are arranged at intervals in a comb-tooth-shaped mutual inserting mode to form a waveguide region, and a germanium layer is arranged on the waveguide region and is contacted with the plurality of first finger electrodes and the plurality of second finger electrodes so as to realize effective extraction of photocurrent flowing into the germanium layer, so that the photoelectric detection structure has higher sensitivity and responsivity.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic plan view of a photodetection structure according to a conventional technology.
Fig. 2 is a schematic cross-sectional view of fig. 1 along A-A'.
Fig. 3 is a schematic plan view of a photoelectric detection structure according to an embodiment of the present application.
Fig. 4 is a schematic cross-sectional structure along the direction B-B' of fig. 3.
Fig. 5 is a schematic structural diagram of the germanium layer in fig. 3.
Fig. 6 is a schematic plan view of a photoelectric detection structure according to another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
The terms "first," "second," and the like herein are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed.
Fig. 1 is a schematic plan view of a photodetection structure according to a conventional technology. Fig. 2 is a schematic cross-sectional view of fig. 1 along A-A'.
Referring to fig. 1 to 2, a photodetection structure 1000 'is provided in the conventional art, which includes a waveguide layer 200', and P-type doped body and N-type doped body located at two sides of the waveguide layer 200', a germanium layer 400', wherein the germanium layer 400 'is located on one side surface of the P-type doped body, the N-type doped body and the waveguide layer 200', and a projection of the germanium layer 400 'overlaps with a projection of the P-type doped body and a projection of the N-type doped body in a direction perpendicular to a plane where the waveguide layer 200' is located.
In a Photodetector (PD) of the conventional art, since a lateral electric field formed between a P-type dopant and an N-type dopant is used to extract a photocurrent in the germanium layer 400', the doping concentrations of the P-type dopant and the N-type dopant and the overlapping area between the germanium layer 400' and the P-type dopant and between the germanium layer and the N-type dopant must be strictly controlled to ensure that a strong electric field effect formed between the P-type dopant and the N-type dopant can be used to extract as much photocurrent in the germanium layer 400 'as possible, so as to improve the output efficiency of the photodetector structure 1000'. Therefore, in this case, the width of the germanium layer 400' needs to be strictly controlled to several hundred nanometers or more.
Fig. 3 is a schematic plan view of a photoelectric detection structure according to an embodiment of the present application. Fig. 4 is a schematic cross-sectional structure along the direction B-B' of fig. 3. Fig. 5 is a schematic structural diagram of the germanium layer in fig. 3. Fig. 6 is a schematic plan view of a photoelectric detection structure according to another embodiment of the present application.
Referring to fig. 3-6, an embodiment of the present application provides a photodetection structure 1000 comprising a waveguide layer 200 in which an optical signal to be detected is transmitted in a given direction (e.g., X-direction) and confined therein; the waveguide layer 200 comprises a silicon-based portion 201, a first dopant 210 and a second dopant 220 disposed within the silicon-based portion 201, the first dopant 210 and the second dopant 220 being of different doping types. The first dopant 210 includes a first main electrode 211 and a plurality of first finger electrodes 212 electrically connected to the first main electrode 211. The second dopant 220 includes a second main electrode 221 and a plurality of second finger electrodes 222 electrically connected to the second main electrode 221. In the embodiment of the present application, the first main electrode 211 and the second main electrode 221 are respectively located at two sides of the waveguide layer 200, and the first main electrode 211 and the second main electrode 221 are disposed opposite to each other. And the plurality of first finger electrodes 212 and the plurality of second finger electrodes 222 are spaced apart in a comb-tooth-like inter-insert form to constitute the waveguide region 300. The photodetection structure 1000 further comprises a germanium layer 400, which germanium layer 400 is located above the waveguide region 300 and is in contact with the plurality of first finger electrodes 212 and the plurality of second finger electrodes 222, such that evanescent tails of optical signals transmitted in the waveguide layer 200 are coupled into the germanium layer 400.
Optionally, the photodetection structure 1000 further includes: a substrate (not shown) for supporting the waveguide layer 200 and the germanium layer 400 over the waveguide layer 200.
Alternatively, the first doped body 210 is a P-type doped body, the second doped body 210 is an N-type doped body, or the first doped body 210 is an N-type doped body, and the second doped body 210 is a P-type doped body. The embodiment of the present application is not limited herein, as long as the doping types of the first doping body 210 and the second doping body 210 are different.
The photodetection structure 1000 according to the present application employs a plurality of first finger electrodes 212 and a plurality of second finger electrodes 222 in the waveguide layer 200 that are arranged at intervals in a comb-like, inter-insert manner. On the one hand, the ends of each first finger electrode 212 in the first doped body 210 and each second finger electrode 222 in the second doped body 220 are alternately arranged along the transmission direction of the optical signal to form a periodically arranged depletion layer, so that the effective length of the PN junction depletion layer in the waveguide layer is increased; on the other hand, by forming the first finger electrode 212 in the first dopant 210 and the second finger electrode 222 in the second dopant 220 in the form of a built-in fringe field (fringe field), the photocurrent flowing into the germanium layer 400 can be effectively extracted, and the electric signal can be transmitted out of the photodetector via the first main electrode 211 and the second main electrode 221. Thus, the photoelectric detection structure 1000 has higher sensitivity and responsivity. In addition, the plurality of first finger electrodes 212 and the plurality of second finger electrodes 222 are arranged at intervals in a comb-tooth-like inter-insert manner, which also allows the design of the waveguide layer 200 having a wider cross-sectional width perpendicular to the optical signal transmission direction, thereby enabling to improve the yield of the photodetection structure 1000 and the performance of the device.
The photodetection structure 1000 of the present application is a horizontal structure without a metal layer, and therefore has advantages over conventional vertical electrode structures, as well as higher responsivity and lower dark current.
In order to reduce the dark current of the device, in addition to controlling the epitaxial growth of the germanium layer 400 and ensuring the accuracy of the manufacturing process of the photodetection structure 1000, the energy gap (band gap) of the material is always the dominant factor of the dark current, so that the germanium layer 400 is directly contacted with the silicon-based portion 201 in the waveguide layer 200, i.e. the germanium is contacted with the silicon (Si-contact), and the energy gap of the silicon is higher than that of the germanium, so as to reduce the dark current of the device and increase the responsiveness of the device.
In the present embodiment, the waveguide layer 200 is used to transmit optical signals between an optical device and an optoelectronic device, and single-mode waveguides and multimode waveguides are widely used in photonic integrated circuits or optical chips (photonic integrated circuit chips, PICs), where the optical chips use photons as information carriers for information processing and data transmission, which may be silicon-based optical chips. The term "single mode waveguide" may be used in the form of a waveguide that supports only Transverse Electric (TE) or only Transverse Magnetic (TM), which may be, for example, a silicon-based strip waveguide or a ridge waveguide, single mode operation enabling direct connection to optical signal processing and networking elements. The term "multimode waveguide" supports both Transverse Electric (TE) and Transverse Magnetic (TM) modes of waveguide, which may be, for example, straight-through and cross waveguides formed on silicon substrates for sampling and separating of combined optical signals. In this embodiment, the germanium layer 400 adopting the above design is compatible with both the single mode waveguide form and the multimode waveguide form.
Further, as shown in fig. 3-5, the main extension direction of the germanium layer 400 is the same as the propagation direction of the optical wave on the waveguide region 300 (e.g., the optical signal transmission direction is along the X-direction). Illustratively, the germanium layer 400 includes a mesa having a length L in the optical signal transmission direction (X-direction) and a width W in a direction substantially perpendicular to the optical signal transmission direction (Z-direction), wherein the mesa has a width W that is less than its length L. The main extension direction of the germanium layer 400 refers to the direction of the length L of the germanium layer 400, and generally coincides with the extension direction of the waveguide layer 200.
Further, in a direction perpendicular to the waveguide layer 200, the projection of the germanium layer 400 covers the waveguide region 300, so that light propagating in the waveguide region 300 can be completely absorbed by the germanium layer 400 and generate photocurrent to improve the output efficiency of the photodetection structure 1000.
In case the width of the waveguide layer 200 is relatively wide, the width of the germanium layer 400 is also relatively tolerant to the first and second doped bodies 210, 220, and optionally, in a direction perpendicular to the waveguide layer 200, the projection of the germanium layer 400 does not overlap with the projection of the first main electrode 211 and with the projection of the second main electrode 221, i.e. the width of the gap between the first main electrode 211 and the second main electrode 221 is larger than the width of the cross section of the germanium layer 400 perpendicular to the extension direction thereof. The germanium layer 400 does not need to be in contact with the first main electrode 211 and the second main electrode 221, that is, there is no need to set the overlapping width between the germanium layer 400 and the first main electrode 211 and the second main electrode 221, and the germanium layer 400 is not limited in width, so that the process of germanium epitaxy on silicon is relatively simple to manufacture, and strict alignment and the like are not needed in the process of manufacturing. In this embodiment, the first main electrode 211 and the second main electrode 221 can be used to transmit the electrical signal out of the photodetector, so that the upper surfaces of the first main electrode 211 and the second main electrode 221 have no contact with the germanium layer 400, which is also beneficial to the derivation of the subsequent electrical signal.
Further, a light receiving part 501 is disposed at one side edge of the germanium layer, and the light receiving part 501 is used for optically aligning with an external photoconductor to receive the optical wave signal. Alternatively, a portion of the waveguide layer 200 protruding from the germanium layer 400 may be used as the light receiving portion 501 for optical coupling alignment to optimize coupling efficiency. In addition, by using the portion of the waveguide layer 200 protruding from the germanium layer 400 as the light receiving portion 501, the manufacturing process can be saved and the manufacturing cost can be reduced.
Further, considering the thickness of the germanium layer 400, the gap (spacing) between the doped first finger electrode 212 and the doped second finger electrode 222, simultaneously, all photocurrents generated at the top of the germanium layer 400 are extracted, so that it can be achieved: even slow carriers (slow carriers) that penetrate diffusion (diffusion) do not affect the optical power extraction of the photodetector structure 1000.
In this embodiment, the thickness of the germanium layer 400 has little effect on the photodetection structure 1000, and the thicker thickness can improve the optimal condition for evanescent coupling.
In addition, the conditions such as the threshold values of the operating voltages of the first and second doped bodies 210 and 220 may be changed by adjusting the doping widths and the doping concentrations of the first and second doped bodies 210 and 220, without being limited by a specific process.
Optionally, in an embodiment of the present application, the photodetection structure 1000 further includes a passivation layer (not shown), which covers the germanium layer 400 and the waveguide layer 200. The passivation layer has the function of surface passivation and can be used for reducing dark current of the photoelectric detection device. In addition, the passivation layer has scratch resistance, can protect the internal film structure thereof from being damaged, and also serves to prevent the germanium layer 400 and the waveguide layer 200 from being contaminated by external environments, moisture corrosion, and the like.
Optionally, in an embodiment of the present application, the photodetection structure 1000 further includes a first metal contact (not shown) electrically connected to the first main electrode 211, and a second metal contact (not shown) electrically connected to the second main electrode 221, the first metal contact and the second metal contact being used for collecting electrons generated by light absorption of the germanium layer 400 to derive a generated photocurrent. The first metal contact is disposed on the first main electrode 211, the second metal contact is disposed on the second main electrode 221, and the projection of the germanium layer 400 does not overlap with the projection of the first main electrode 211 and the projection of the second main electrode 221 in the direction perpendicular to the waveguide layer 200, so that the first metal contact and the second metal contact can avoid direct contact with the germanium layer 400, thereby avoiding absorption of electrons by the metal layer caused by the metal layer under the germanium layer 400 and affecting the responsiveness of the device. In addition, since the first main electrode 211 and the second main electrode 221 are heavily doped P-region and N-region, respectively, the first metal contact may form a better ohmic contact with the first main electrode 211, and the second metal contact may form a better ohmic contact with the second main electrode 221, so as to apply a desired bias and inject and extract a generated current, and to overcome the adverse effect of the presence of a silicon layer on the electrical characteristics of the device.
Another embodiment of the present application provides an optoelectronic integrated chip, which includes the photodetection structure described in the foregoing embodiment.
The embodiment of the application provides a photoelectric detection structure and a photoelectric integrated chip, which aim to realize photoelectric conversion by arranging a first doping body and a second doping body in a silicon-based part of a waveguide layer, wherein the first doping body comprises a plurality of first finger electrodes, the second doping body comprises a plurality of second finger electrodes, the plurality of first finger electrodes and the plurality of second finger electrodes are arranged at intervals in a comb-tooth-shaped mutual inserting mode to form a waveguide region, and a germanium layer is arranged on the waveguide region and is contacted with the plurality of first finger electrodes and the plurality of second finger electrodes so as to realize effective extraction of photocurrent flowing into the germanium layer, so that the photoelectric detection structure has higher sensitivity and responsivity.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The above describes in detail a photoelectric detection structure and a photoelectric integrated chip provided by the embodiment of the present application, and specific examples are applied to describe the principle and implementation of the present application, and the description of the above embodiment is only used to help understand the technical solution and core idea of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.

Claims (10)

1. A photodetection structure, comprising:
a substrate, a waveguide layer disposed on the substrate, and a germanium layer disposed on the waveguide layer;
the waveguide layer comprises a silicon-based part, and a first doping body and a second doping body which are arranged in the silicon-based part, wherein the doping types of the first doping body and the second doping body are different, the first doping body comprises a first main electrode and a plurality of first finger electrodes electrically connected with the first main electrode, the second doping body comprises a second main electrode and a plurality of second finger electrodes electrically connected with the second main electrode, the first main electrode and the second main electrode are oppositely arranged, and the plurality of first finger electrodes and the plurality of second finger electrodes are distributed at intervals in a comb-tooth shape and are mutually inserted to form a waveguide area;
the germanium layer is located over the waveguide region and is in contact with the plurality of first finger electrodes and with the plurality of second finger electrodes.
2. The photodetection structure according to claim 1, wherein,
and one side edge of the germanium layer is provided with a light receiving part, and the light receiving part is used for carrying out optical coupling alignment with an external light guide body so as to receive light waves.
3. The photodetection structure according to claim 2, wherein,
the main extension direction of the germanium layer is the same as the conduction direction of the light wave on the waveguide region.
4. A photodetecting structure according to claim 3, wherein,
the projection of the germanium layer at least partially covers the waveguide region in a direction perpendicular to the waveguide layer.
5. The photodetection structure according to claim 4, wherein,
in a direction perpendicular to the waveguide layer, the projection of the germanium layer does not overlap with the projection of the first main electrode and with the projection of the second main electrode.
6. The photodetection structure according to claim 2, wherein,
the waveguide layer is arranged on a part of the germanium layer in a protruding mode to serve as a light receiving part, and the light receiving part, the first doping body and the second doping body are located on the same film layer.
7. The photodetection structure according to claim 2, wherein,
the light receiving section further includes a template converter for introduction of the optical signal.
8. The photodetection structure according to claim 1, wherein,
the photoelectric detection structure further comprises a first metal contact electrically connected with the first main electrode and a second metal contact electrically connected with the second main electrode, wherein the first metal contact and the second metal contact are used for guiding out photocurrent generated by the germanium layer.
9. The photodetection structure according to claim 1, further comprising a passivation layer overlying the germanium layer and the waveguide layer.
10. An optoelectronic integrated chip, characterized in that it comprises a photodetection structure according to any one of claims 1-9.
CN202210230747.0A 2022-03-10 2022-03-10 Photoelectric detection structure and photoelectric integrated chip Pending CN116779695A (en)

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Application Number Priority Date Filing Date Title
CN202210230747.0A CN116779695A (en) 2022-03-10 2022-03-10 Photoelectric detection structure and photoelectric integrated chip
TW111135280A TW202337045A (en) 2022-03-10 2022-09-19 Photoelectric detector structure and photoelectric integrated chip
PCT/CN2022/132887 WO2023168987A1 (en) 2022-03-10 2022-11-18 Photoelectric detection structure and photoelectric integrated chip

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Application Number Priority Date Filing Date Title
CN202210230747.0A CN116779695A (en) 2022-03-10 2022-03-10 Photoelectric detection structure and photoelectric integrated chip

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