CN116770275A - Air extraction control method, device, medium and equipment of chemical vapor deposition equipment - Google Patents

Air extraction control method, device, medium and equipment of chemical vapor deposition equipment Download PDF

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Publication number
CN116770275A
CN116770275A CN202310761233.2A CN202310761233A CN116770275A CN 116770275 A CN116770275 A CN 116770275A CN 202310761233 A CN202310761233 A CN 202310761233A CN 116770275 A CN116770275 A CN 116770275A
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CN
China
Prior art keywords
throttle valve
opening
vapor deposition
chemical vapor
preset
Prior art date
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Pending
Application number
CN202310761233.2A
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Chinese (zh)
Inventor
厉冰峰
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Shengjisheng Semiconductor Technology Shanghai Co ltd
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Shengjisheng Semiconductor Technology Shanghai Co ltd
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Priority to CN202310761233.2A priority Critical patent/CN116770275A/en
Publication of CN116770275A publication Critical patent/CN116770275A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Abstract

The invention discloses an air extraction control method, a device, a medium and equipment of chemical vapor deposition equipment, wherein the air extraction control method of the chemical vapor deposition equipment comprises the following steps: when the chemical vapor deposition process enters an air extraction stage, a throttle valve of chemical vapor deposition equipment is controlled to open a preset opening; controlling an air pump to pump gas in a reaction chamber of the chemical vapor deposition equipment; and when the preset condition is met, controlling to increase the opening of the throttle valve until the throttle valve is completely opened. The invention solves the problems that the vapor deposition process is easy to adhere particles on the surface of the wafer in the air extraction stage, thereby causing wafer defects and reducing the wafer yield.

Description

Air extraction control method, device, medium and equipment of chemical vapor deposition equipment
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a method for controlling the evacuation of a chemical vapor deposition apparatus, an evacuation control device for a chemical vapor deposition apparatus, a computer-readable storage medium, and a chemical vapor deposition apparatus.
Background
In the manufacture of semiconductors, it is often necessary to deposit thin films on wafers, and there are many ways to deposit thin films, one of the more common being chemical vapor deposition (Chemical Vapor Deposition, CVD). Chemical vapor deposition equipment generally includes process flows of introducing carrier gas, introducing reactant gas, film deposition, purging wafers, extracting gases from the reaction chamber, and the like.
In general, at the stage of extracting the gas from the reaction chamber, 100% of the throttle valve is opened for air extraction at one time, and at this time, particles in the gas adhere to the surface of the wafer due to pressure change in the reaction chamber, so that the wafer is defective, and the yield of the wafer is reduced.
Disclosure of Invention
The invention aims to solve the technical problems of easily attaching particles on the surface of a wafer in the air suction stage of a vapor deposition process, causing wafer defects and reducing the wafer yield by providing an air suction control method of chemical vapor deposition equipment, an air suction control device of the chemical vapor deposition equipment, a computer readable storage medium and the chemical vapor deposition equipment.
In order to solve the above technical problems, according to an aspect of the present invention, there is provided an air pumping control method of a chemical vapor deposition apparatus, including:
when the chemical vapor deposition process enters an air extraction stage, controlling a throttle valve of the chemical vapor deposition equipment to open a preset opening;
controlling an air pump to pump gas in a reaction chamber of the chemical vapor deposition equipment;
and when the preset condition is met, controlling to increase the opening of the throttle valve until the throttle valve is completely opened.
In some embodiments, the preset condition is a preset time;
and when the preset condition is met, controlling to increase the opening of the throttle valve until the throttle valve is completely opened, wherein the method comprises the following steps of:
and controlling the air sucking pump to suck the gas in the reaction cavity for preset time every interval, and controlling the opening degree of the throttle valve to be increased until the throttle valve is completely opened.
In some embodiments, the preset condition is a preset percentage pressure change;
and when the preset condition is met, controlling to increase the opening of the throttle valve until the throttle valve is completely opened, wherein the method comprises the following steps of:
and when the air pressure change value in the reaction chamber reaches the preset pressure change percentage, controlling to increase the opening of the throttle valve until the throttle valve is completely opened.
In some embodiments, the throttle valve increases in opening at the same time when the preset condition is reached.
In some embodiments, the throttle valve increased opening gradually increases each time a preset condition is reached, and the throttle valve increased opening is proportional to the number of adjustments of the throttle valve opening.
In some embodiments, the step of controlling the throttle valve of the chemical vapor deposition apparatus to open a preset opening degree when the chemical vapor deposition process enters the pumping stage includes:
when entering the air extraction stage, acquiring a current air pressure value in the reaction chamber;
determining a target opening corresponding to the current air pressure value based on a corresponding relation between a pre-stored air pressure value and the opening of a throttle valve, and taking the target opening as the preset opening;
and controlling the throttle valve to open the preset opening.
In some embodiments, the pumping control method further comprises:
when detecting that the opening of the throttle valve changes, acquiring the current opening of the throttle valve;
controlling the output power of the air pump according to the current opening;
wherein the output power of the suction pump is inversely proportional to the current opening degree.
According to another aspect of the present invention, there is provided an air pumping control device of a chemical vapor deposition apparatus, comprising:
the throttle valve opening module is configured to control the throttle valve of the chemical vapor deposition equipment to open a preset opening degree when the chemical vapor deposition process enters an air extraction stage;
the air exhaust control module is configured to control an air exhaust pump to exhaust gas in a reaction cavity of the chemical vapor deposition equipment;
and the opening adjustment module is configured to control and increase the opening of the throttle valve until the throttle valve is completely opened when a preset condition is met.
In some embodiments, the preset condition is a preset time;
the opening adjustment module is specifically configured to:
and controlling the air sucking pump to suck the gas in the reaction cavity for preset time every interval, and controlling the opening degree of the throttle valve to be increased until the throttle valve is completely opened.
In some embodiments, the preset condition is a preset percentage pressure change;
the opening adjustment module is specifically configured to:
and when the air pressure change value in the reaction chamber reaches the preset pressure change percentage, controlling to increase the opening of the throttle valve until the throttle valve is completely opened.
In some embodiments, the throttle valve increases in opening at the same time when the preset condition is reached.
In some embodiments, the throttle valve increased opening gradually increases each time a preset condition is reached, and the throttle valve increased opening is proportional to the number of adjustments of the throttle valve opening.
In some embodiments, the throttle opening module is specifically configured to:
when entering the air extraction stage, acquiring a current air pressure value in the reaction chamber; determining a target opening corresponding to the current air pressure value based on a corresponding relation between a pre-stored air pressure value and the opening of a throttle valve, and taking the target opening as the preset opening; and controlling the throttle valve to open the preset opening.
In some embodiments, the pump down control module is further configured to:
when the change of the opening of the throttle valve is detected, acquiring the current opening of the throttle valve; controlling the output power of the air pump according to the current opening;
wherein the output power of the suction pump is inversely proportional to the current opening degree.
According to another aspect of the present invention, there is provided a computer-readable storage medium storing a computer program which, when executed by a computer or processor, implements the steps of the pumping control method of the chemical vapor deposition apparatus described in any one of the above embodiments.
According to another aspect of the present invention, there is provided a chemical vapor deposition apparatus including a memory and a processor, the memory storing a computer program which, when executed by the processor, is capable of implementing the steps of the pumping control method of the chemical vapor deposition apparatus described in any one of the above embodiments.
Compared with the prior art, the invention has obvious advantages and beneficial effects. By means of the technical scheme, the air extraction control method, the air extraction control device, the medium and the air extraction control equipment for the chemical vapor deposition equipment can achieve quite technical progress and practicability, have wide industrial application value, and have at least the following advantages:
according to the invention, the sectional opening of the throttle valve is realized by controlling the gradually increasing opening of the throttle valve, so that the pressure change in the reaction chamber of the chemical vapor deposition equipment can be effectively controlled, the condition that particles in gas adhere to the surface of a wafer in the air extraction stage is improved, the problem of wafer defects caused by the particles is avoided, and the yield of the wafer is improved.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention, as well as the preferred embodiments thereof, together with the following detailed description of the invention, given by way of illustration only, together with the accompanying drawings.
Drawings
FIG. 1 is a schematic flow chart of a method for controlling the pumping of a chemical vapor deposition apparatus according to an embodiment of the invention;
FIG. 2 is a flow chart of a method for controlling the pumping of a chemical vapor deposition apparatus according to another embodiment of the present invention;
FIG. 3 is a block diagram showing the structure of an exhaust control apparatus of a chemical vapor deposition apparatus according to an embodiment of the present invention.
Detailed Description
In order to further describe the present invention, detailed descriptions are given below of a method for controlling the pumping of a chemical vapor deposition apparatus, a device for controlling the pumping of a chemical vapor deposition apparatus, a computer-readable storage medium, and a specific embodiment of a chemical vapor deposition apparatus according to the present invention with reference to the accompanying drawings.
The chemical vapor deposition process generally includes the steps of introducing a carrier gas into a reaction chamber of a chemical vapor deposition apparatus, introducing a reaction gas into the reaction chamber, performing thin film deposition on a wafer surface, performing a post-treatment stage, purging particles on the wafer surface, and exhausting gas (i.e., exhausting stage) in the reaction chamber.
In the pumping stage, as the gas in the reaction chamber is pumped out, the phenomenon that the particles floating in the gas are partially attached to the surface of the wafer occurs due to the change of the pressure in the reaction chamber, so that the wafer defect is caused, and the yield of the wafer is affected. Based on the above, the invention controls the opening of the throttle valve in stages so as to control the pressure change in the reaction chamber and improve the condition that the particles adhere to the surface of the wafer.
Fig. 1 shows a flow of a pumping control method of a chemical vapor deposition apparatus according to an embodiment of the present invention. As shown in fig. 1, the pumping control method of the chemical vapor deposition apparatus includes:
step S10, when the chemical vapor deposition process enters the air extraction stage, a throttle valve of the chemical vapor deposition equipment is controlled to open a preset opening.
The throttle valve is arranged between the reaction chamber and the air pump of the chemical vapor deposition equipment and used for communicating and blocking the reaction chamber and the air pump.
In this step, when the chemical vapor deposition process enters the pumping stage, the throttle valve is controlled to open by a preset opening degree which does not reach the maximum opening degree of the throttle valve, that is, when entering the pumping stage, the throttle valve is controlled to open a part.
In an embodiment, the preset opening degree may be preset according to the condition of the chemical vapor deposition apparatus, for example, set to 10%, 15%, 20%, 25% or the like of the maximum opening degree of the throttle valve.
In another embodiment, the preset opening is related to the current air pressure value in the reaction chamber when the pumping stage is entered, and the larger the current air pressure value is, the larger the preset opening is. That is, in this embodiment, the preset opening degree is proportional to the current air pressure value. And the preset opening of the throttle valve can be determined through the current air pressure value in the reaction chamber by presetting the corresponding relation between the air pressure value and the opening of the throttle valve.
Specifically, when the chemical vapor deposition process enters the pumping stage, a current air pressure value in a reaction chamber of the chemical vapor deposition equipment is obtained. And determining a target opening corresponding to the current air pressure value of the reaction chamber in the corresponding relation between the air pressure value and the opening of the throttle valve based on the corresponding relation between the pre-stored air pressure value and the opening of the throttle valve, and taking the target opening as the preset opening of the throttle valve when entering the air extraction stage. And when the air suction stage is started, the throttle valve is controlled to open a preset opening.
In this embodiment, the opening of the throttle valve can be controlled more effectively when the pumping stage is entered, depending on the value of the air pressure in the reaction chamber.
In step S20, the pump is controlled to pump the gas in the reaction chamber of the chemical vapor deposition apparatus.
And after entering the air extraction stage, controlling the throttle valve to open a preset opening, controlling the air extraction pump to operate, and extracting the gas in the reaction chamber.
In one embodiment, the pump is a fixed frequency pump, i.e. the output power of the pump is always at a fixed value, and the pump is always operated with a fixed output power during the whole pumping phase.
In another embodiment, the pump is a variable frequency pump, the output power of the pump is adjusted according to the opening of the throttle valve, and the output power of the pump is inversely proportional to the opening of the throttle valve, i.e. the larger the opening of the throttle valve, the smaller the output power of the pump.
And step S30, controlling to increase the opening of the throttle valve every time the preset condition is met until the throttle valve is completely opened.
In this step, in order to better control the gas pressure in the reaction chamber, the adhesion of particles in the gas to the wafer surface during the pumping process is alleviated. And in the execution process of the air extraction stage, the opening degree of the throttle valve is adjusted for a plurality of times until the throttle valve is fully opened. While preset conditions are set to control the timing of increasing the opening degree of the throttle valve.
In one embodiment, the preset condition is a preset time, that is, the gas in the reaction chamber is controlled to be pumped, and the opening of the throttle valve is controlled to be increased every preset time, until the throttle valve is completely opened.
The preset time may be set according to the specific situation of the chemical vapor deposition apparatus, for example, the preset time is 2 seconds, 5 seconds, 7 seconds, etc., and the present invention is not limited to the specific time.
In another embodiment, the preset condition is a preset pressure change percentage, that is, the increase of the opening of the throttle valve is controlled according to the change condition of the air pressure in the reaction chamber.
Specifically, the gas in the reaction chamber is controlled to be pumped, and when the pressure value in the reaction chamber is reduced by a preset pressure change percentage, the opening of the throttle valve is controlled to be increased until the throttle valve is completely opened. The predetermined percentage of pressure change is based on the value of the gas pressure in the reaction chamber at the beginning of the pumping phase.
The preset pressure change percentage can be set according to the specific conditions of the chemical vapor deposition equipment, for example, the preset pressure change percentage is 10%, 20%, 30%, etc., and the invention is not limited by specific numerical values.
In one embodiment, the opening of the throttle valve is increased the same each time the preset condition is reached. I.e. the opening of the throttle valve is increased by the same amount, e.g. by 20%, 25%, 30% of the total opening, etc., each time the preset condition is reached.
For example, when the pumping phase starts, the preset opening of the throttle valve is 25%, when the preset condition is reached for the first time, the opening of the throttle valve is controlled to be increased by 25%, and when the preset condition is reached for the second time, the opening of the throttle valve is still controlled to be increased by 25%, until the throttle valve is fully opened.
In another embodiment, the throttle valve increases in opening gradually every time the preset condition is reached, and the throttle valve increases in opening in proportion to the number of adjustments of the throttle valve opening.
Specifically, the opening degree by which the throttle valve is increased is different every time the preset condition is reached, and the opening degree by which the throttle valve is increased each time becomes larger as the number of adjustments increases. For example, when the preset condition is reached for the first time, the opening of the throttle valve is increased by 25% on the basis of the preset opening, and when the preset condition is reached for the second time, the throttle valve is increased by 50% on the basis of the opening after the first time adjustment.
In one embodiment, as shown in fig. 2, the method for controlling the pumping of the chemical vapor deposition apparatus further includes:
step S40, when detecting that the opening of the throttle valve changes, acquiring the current opening of the throttle valve.
In this step, the change in the opening degree of the throttle valve is detected in real time, and the current opening degree of the throttle valve is obtained each time the change in the opening degree of the throttle valve is detected. The opening degree variation of the throttle valve includes: and in the air extraction stage, controlling the throttle valve to open a preset opening degree, and controlling the opening degree of the throttle valve to be increased every time a preset condition is reached.
And step S50, controlling the output power of the air pump according to the current opening degree.
It is known that in general, the throttle valve in the pumping stage is fully opened at one time, and the throttle valve in the present invention is opened multiple times in stages until it is fully opened. If the output power of the air pump is unchanged all the time, the air pumping time of the air pumping stage is obviously longer than the time of opening the air throttle valve at one time. The time of the whole chemical vapor deposition process is necessarily increased, and the production efficiency is affected.
Based on this, the output power of the suction pump of the present invention is set to be adjustable, and how much of the output power is dependent on the opening degree of the throttle valve. Specifically, the output power of the air pump is inversely proportional to the size of the throttle valve, i.e., the smaller the opening of the throttle valve, the greater the output power of the air pump.
According to another embodiment of the present invention, there is provided an exhaust control apparatus of a chemical vapor deposition device, as shown in fig. 3, the apparatus including: a throttle opening module 10, an air extraction control module 20 and an opening adjustment module 30.
Wherein the throttle valve opening module 10 is configured to control the throttle valve opening preset opening of the chemical vapor deposition apparatus when the chemical vapor deposition process enters the pumping stage.
The throttle valve is arranged between the reaction chamber and the air pump of the chemical vapor deposition equipment and used for communicating and blocking the reaction chamber and the air pump.
The throttle valve opening module 10 controls the throttle valve to open a preset opening degree when the chemical vapor deposition process enters the pumping stage, that is, controls the throttle valve to open a part when the chemical vapor deposition process enters the pumping stage.
In an embodiment, the preset opening degree may be preset according to the condition of the chemical vapor deposition apparatus, for example, set to 10%, 15%, 20%, 25% or the like of the maximum opening degree of the throttle valve.
In another embodiment, the preset opening is related to the current air pressure value in the reaction chamber when the pumping stage is entered, and the larger the current air pressure value is, the larger the preset opening is. That is, in this embodiment, the preset opening degree is proportional to the current air pressure value. The throttle opening module 10 may further determine the preset opening of the throttle valve by the current air pressure value in the reaction chamber through the corresponding relationship between the preset air pressure value and the opening of the throttle valve.
Specifically, when the chemical vapor deposition process enters the pumping stage, the throttle valve opening module 10 acquires the current pressure value in the reaction chamber of the chemical vapor deposition apparatus. And determining a target opening corresponding to the current air pressure value of the reaction chamber in the corresponding relation between the air pressure value and the opening of the throttle valve based on the corresponding relation between the pre-stored air pressure value and the opening of the throttle valve, and taking the target opening as the preset opening of the throttle valve when entering the air extraction stage. And when the air suction stage is started, the throttle valve is controlled to open a preset opening.
In this embodiment, the opening of the throttle valve can be controlled more effectively when the pumping stage is entered, depending on the value of the air pressure in the reaction chamber.
The pumping control module 20 is configured to control a pumping pump to pump gas within a reaction chamber of the chemical vapor deposition apparatus.
After entering the pumping stage and controlling the throttle valve to open to a preset opening, the pumping control module 20 controls the pumping pump to operate so as to pump the gas in the reaction chamber.
In one embodiment, the pump is a fixed frequency pump, i.e. the output power of the pump is always at a fixed value, and the pump is always operated with a fixed output power during the whole pumping phase.
In another embodiment, the pump is a variable frequency pump, the output power of the pump is adjusted according to the opening of the throttle valve, and the output power of the pump is inversely proportional to the opening of the throttle valve, i.e. the larger the opening of the throttle valve, the smaller the output power of the pump.
The opening adjustment module 30 is configured to control to increase the opening of the throttle valve until the throttle valve is fully opened every time a preset condition is reached.
In order to better control the gas pressure in the reaction chamber, the condition that particles in the gas adhere to the surface of the wafer in the pumping process is relieved. During the execution of the pumping phase, the opening adjustment module 30 adjusts the opening of the throttle valve a plurality of times until the throttle valve is fully opened. While preset conditions are set to control the timing of increasing the opening degree of the throttle valve.
In one embodiment, the preset condition is a preset time, that is, the gas in the reaction chamber is controlled to be pumped, and the opening of the throttle valve is controlled to be increased every preset time, until the throttle valve is completely opened.
The preset time may be set according to the specific situation of the chemical vapor deposition apparatus, for example, the preset time is 2 seconds, 5 seconds, 7 seconds, etc., and the present invention is not limited to the specific time.
In another embodiment, the preset condition is a preset pressure change percentage, that is, the increase of the opening of the throttle valve is controlled according to the change condition of the air pressure in the reaction chamber.
Specifically, the gas in the reaction chamber is controlled to be pumped, and when the pressure value in the reaction chamber is reduced by a preset pressure change percentage, the opening of the throttle valve is controlled to be increased until the throttle valve is completely opened. The predetermined percentage of pressure change is based on the value of the gas pressure in the reaction chamber at the beginning of the pumping phase.
The preset pressure change percentage can be set according to the specific conditions of the chemical vapor deposition equipment, for example, the preset pressure change percentage is 10%, 20%, 30%, etc., and the invention is not limited by specific numerical values.
In one embodiment, the opening of the throttle valve is increased the same each time the preset condition is reached. I.e. the opening of the throttle valve is increased by the same amount, e.g. by 20%, 25%, 30% of the total opening, etc., each time the preset condition is reached.
For example, when the pumping phase starts, the preset opening of the throttle valve is 25%, when the preset condition is reached for the first time, the opening of the throttle valve is controlled to be increased by 25%, and when the preset condition is reached for the second time, the opening of the throttle valve is still controlled to be increased by 25%, until the throttle valve is fully opened.
In another embodiment, the throttle valve increases in opening gradually every time the preset condition is reached, and the throttle valve increases in opening in proportion to the number of adjustments of the throttle valve opening.
Specifically, the opening degree by which the throttle valve is increased is different every time the preset condition is reached, and the opening degree by which the throttle valve is increased each time becomes larger as the number of adjustments increases. For example, when the preset condition is reached for the first time, the opening of the throttle valve is increased by 25% on the basis of the preset opening, and when the preset condition is reached for the second time, the throttle valve is increased by 50% on the basis of the opening after the first time adjustment.
In an embodiment, the pumping control module 20 is further configured to obtain the current opening of the throttle valve when the pump control module detects that the opening of the throttle valve changes; and controlling the output power of the air pump according to the current opening. Wherein the output power of the air pump is inversely proportional to the current opening.
Specifically, the air extraction control module 20 detects a change in the opening of the throttle valve in real time, and obtains the current opening of the throttle valve whenever the change in the opening of the throttle valve is detected. The opening degree variation of the throttle valve includes: and in the air extraction stage, controlling the throttle valve to open a preset opening degree, and controlling the opening degree of the throttle valve to be increased every time a preset condition is reached.
It is known that in general, the throttle valve in the pumping stage is fully opened at one time, and the throttle valve in the present invention is opened multiple times in stages until it is fully opened. If the output power of the air pump is unchanged all the time, the air pumping time of the air pumping stage is obviously longer than the time of opening the air throttle valve at one time. The time of the whole chemical vapor deposition process is necessarily increased, and the production efficiency is affected.
Based on this, the output power of the suction pump of the present invention is set to be adjustable, and how much of the output power is dependent on the opening degree of the throttle valve. Specifically, the output power of the air pump is inversely proportional to the size of the throttle valve, i.e., the smaller the opening of the throttle valve, the greater the output power of the air pump.
According to another embodiment of the present invention, there is provided a readable storage medium storing a computer program which, when executed by a computer or processor, implements the steps of the pumping control method of the chemical vapor deposition apparatus in any of the above embodiments.
According to another embodiment of the present invention, there is provided a chemical vapor deposition apparatus including a memory and a processor, the memory storing a computer program which, when executed by the processor, is capable of implementing the steps of the pumping control method of the chemical vapor deposition apparatus in any one of the above embodiments.
The present invention is not limited to the above-mentioned embodiments, but is intended to be limited to the following embodiments, and any modifications, equivalents and modifications can be made to the above-mentioned embodiments without departing from the scope of the invention.

Claims (10)

1. A method for controlling the pumping of a chemical vapor deposition apparatus, comprising:
when the chemical vapor deposition process enters an air extraction stage, a throttle valve of chemical vapor deposition equipment is controlled to open a preset opening;
controlling an air pump to pump gas in a reaction chamber of the chemical vapor deposition equipment;
and when the preset condition is met, controlling to increase the opening of the throttle valve until the throttle valve is completely opened.
2. The method according to claim 1, wherein the preset condition is a preset time;
and when the preset condition is met, controlling to increase the opening of the throttle valve until the throttle valve is completely opened, wherein the method comprises the following steps of:
and controlling the air sucking pump to suck the gas in the reaction cavity for preset time every interval, and controlling the opening degree of the throttle valve to be increased until the throttle valve is completely opened.
3. The method according to claim 1, wherein the preset condition is a preset pressure change percentage;
and when the preset condition is met, controlling to increase the opening of the throttle valve until the throttle valve is completely opened, wherein the method comprises the following steps of:
and when the air pressure change value in the reaction chamber reaches the preset pressure change percentage, controlling to increase the opening of the throttle valve until the throttle valve is completely opened.
4. A method for controlling the pumping of a chemical vapor deposition apparatus according to claim 2 or 3, wherein the throttle valve is increased by the same opening degree every time a preset condition is reached.
5. A method of controlling suction of a chemical vapor deposition apparatus according to claim 2 or 3, wherein the throttle valve increases in opening gradually every time a preset condition is reached, and the throttle valve increases in opening in proportion to the number of adjustments of the throttle valve opening.
6. The method according to claim 1, wherein the step of controlling the throttle valve of the chemical vapor deposition apparatus to open a preset opening degree when the chemical vapor deposition process enters the pumping stage comprises:
when entering the air extraction stage, acquiring a current air pressure value in the reaction chamber;
determining a target opening corresponding to the current air pressure value based on a corresponding relation between a pre-stored air pressure value and the opening of a throttle valve, and taking the target opening as the preset opening;
and controlling the throttle valve to open the preset opening.
7. The method according to claim 1, further comprising:
when detecting that the opening of the throttle valve changes, acquiring the current opening of the throttle valve;
controlling the output power of the air pump according to the current opening;
wherein the output power of the suction pump is inversely proportional to the current opening degree.
8. An air extraction control device of chemical vapor deposition equipment, which is characterized by comprising:
the throttle valve opening module is configured to control the throttle valve of the chemical vapor deposition equipment to open a preset opening degree when the chemical vapor deposition process enters an air extraction stage;
the air exhaust control module is configured to control an air exhaust pump to exhaust gas in a reaction cavity of the chemical vapor deposition equipment;
and the opening adjustment module is configured to control and increase the opening of the throttle valve until the throttle valve is completely opened when a preset condition is met.
9. A computer-readable storage medium storing a computer program, characterized by: the program when executed by a computer or processor implements the steps of the method of any of claims 1 to 7.
10. A chemical vapor deposition apparatus comprising a memory and a processor, characterized in that: the memory stores a computer program which, when executed by the processor, is capable of implementing the steps of the method of any one of claims 1 to 7.
CN202310761233.2A 2023-06-26 2023-06-26 Air extraction control method, device, medium and equipment of chemical vapor deposition equipment Pending CN116770275A (en)

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CN202310761233.2A CN116770275A (en) 2023-06-26 2023-06-26 Air extraction control method, device, medium and equipment of chemical vapor deposition equipment

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CN202310761233.2A CN116770275A (en) 2023-06-26 2023-06-26 Air extraction control method, device, medium and equipment of chemical vapor deposition equipment

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