CN116768464A - Doped optical fiber, optical fiber amplifier and preparation method of doped optical fiber - Google Patents

Doped optical fiber, optical fiber amplifier and preparation method of doped optical fiber Download PDF

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Publication number
CN116768464A
CN116768464A CN202210227638.3A CN202210227638A CN116768464A CN 116768464 A CN116768464 A CN 116768464A CN 202210227638 A CN202210227638 A CN 202210227638A CN 116768464 A CN116768464 A CN 116768464A
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China
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ions
optical fiber
doped
doped optical
core
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童朝阳
顾劭忆
任军江
严洒洒
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Shanghai Transmission Line Research Institute No 23 Research Institute Of China Electronics Technology Group Corp
Huawei Technologies Co Ltd
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Shanghai Transmission Line Research Institute No 23 Research Institute Of China Electronics Technology Group Corp
Huawei Technologies Co Ltd
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Priority to CN202210227638.3A priority Critical patent/CN116768464A/en
Priority to PCT/CN2023/080167 priority patent/WO2023169442A1/en
Publication of CN116768464A publication Critical patent/CN116768464A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
    • C03B37/01815—Reactant deposition burners or deposition heating means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
    • C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/02—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor
    • C03B37/025—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor from reheated softened tubes, rods, fibres or filaments, e.g. drawing fibres from preforms
    • C03B37/027—Fibres composed of different sorts of glass, e.g. glass optical fibres
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C13/00—Fibre or filament compositions
    • C03C13/04—Fibre optics, e.g. core and clad fibre compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C13/00—Fibre or filament compositions
    • C03C13/04—Fibre optics, e.g. core and clad fibre compositions
    • C03C13/045—Silica-containing oxide glass compositions
    • C03C13/046—Multicomponent glass compositions
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06716—Fibre compositions or doping with active elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers

Abstract

The embodiment of the application provides a doped optical fiber, an optical fiber amplifier and a preparation method of the doped optical fiber, wherein doped ions are arranged in a fiber core of the doped optical fiber, the doped ions comprise at least one of ytterbium ions and lanthanum ions, erbium ions, phosphorus ions, aluminum ions and a small amount of germanium ions or fluorine ions, the fiber core is co-doped with the erbium ions by using at least one of ytterbium ions and lanthanum ions, the doping concentration and luminous efficiency of the erbium ions are effectively improved, the gain performance and the gain width of the doped optical fiber are improved, and the wide spectral gain of the doped optical fiber in an extended C wave band and an extended L wave band can be realized by highly doping the aluminum ions and the phosphorus ions, so that the problem that the gain bandwidth of the conventional doped optical fiber is narrower is solved.

Description

Doped optical fiber, optical fiber amplifier and preparation method of doped optical fiber
Technical Field
The application relates to the technical field of optical fiber communication, in particular to a doped optical fiber, an optical fiber amplifier and a preparation method of the doped optical fiber.
Background
Optical fiber communication has become a technical support of backbone high-speed communication networks, wherein an optical fiber amplifier (Optical Fiber Amplifier; OFA) is an all-optical amplifier applied to an optical fiber communication system for amplifying optical signals, is used for realizing the all-amplification function of high gain, wide bandwidth and low noise, and is an essential key device in a new generation of optical fiber communication system.
At present, with the increase of transmission capacity, higher requirements are put on the working bandwidth of the amplifier fiber, wherein the doped fiber amplifier is widely focused due to low noise, high gain and wide bandwidth. The key core of the doped fiber amplifier is the doped fiber, and the common fiber amplifier (Erbium Doped Fiber Amplifier; EDFA) is an erbium ion doped fiber amplifier, wherein the gain bandwidth band of erbium ions is about 1530nm-1560nm and is consistent with the lowest loss band of the fiber, so the erbium-doped fiber is widely used. Specifically, during the process of manufacturing the optical fiber, erbium ions with a certain concentration are doped in the fiber core layer deposition of the optical fiber, so that the optical fiber comprising the Er ion component system is formed in the fiber core layer of the optical fiber.
However, the gain bandwidth of the doped optical fiber is relatively narrow, and the amplification performance requirement of the optical fiber amplifier in a wider bandwidth range cannot be met.
Disclosure of Invention
The application provides a doped optical fiber, an optical fiber amplifier and a preparation method of the doped optical fiber, which solve the problem that the broadband amplification performance of the optical fiber amplifier is affected due to the narrow gain bandwidth of the conventional doped optical fiber.
A first aspect of the present application provides a doped optical fiber comprising a core having doping ions therein;
the doping ions at least comprise: at least one of ytterbium ions and lanthanum ions, erbium ions, phosphorus ions, aluminum ions and doped ions A, wherein the doped ions A are germanium ions or fluorine ions;
the doping concentration of the aluminum ions is 0.5-12 wt%.
By doping erbium ions in the optical fiber, the main luminescence center of the erbium ions is near 1530nm, and the gain bandwidth covers 1530nm-1560nm better, which is in agreement with the minimum loss band of the optical fiber, namely the common C band, and is beneficial to exerting the gain effect. In addition, at least one of lanthanum ions and ytterbium ions is adopted as co-doped ions of erbium ions, in other words, the at least one of lanthanum ions and ytterbium ions and the erbium ions are doped in the fiber core in a co-doping mode, the space between the erbium ions can be increased by the existence of the at least one of lanthanum ions and ytterbium ions, the dispersibility of the erbium ions is improved, the probability of concentration quenching of the erbium ions due to clusters is reduced, the doping concentration of the erbium ions in the fiber core is improved, and therefore gain performance and gain bandwidth of the doped fiber are improved. Meanwhile, ytterbium ions can effectively improve the absorption cross section of pump light and realize energy transfer to erbium ions, so that the luminous characteristics of the erbium ions are improved, and the gain performance and gain bandwidth of the doped optical fiber are further improved.
In addition, the coordination environment of the erbium ions can be changed by the aluminum ions and the phosphorus ions, so that the energy level splitting of the erbium ions is promoted, the gain bandwidth of the doped optical fiber is expanded, for example, the bandwidth is expanded to an L-band, and the gain bandwidth of the doped optical fiber can be further effectively improved. In addition, the higher-concentration doping of aluminum ions is realized, the stronger the effect of the aluminum ion doping concentration on the erbium ion ligand field is, the further the gain bandwidth of the doped optical fiber is expanded, the wide-spectrum gain of the doped optical fiber in the expanded C wave band is realized, and the gain flatness of the doped optical fiber is also improved.
In one possible implementation, the doping concentration of the phosphorus ions is 0.5wt% to 15wt%.
Therefore, the high-concentration doping of the phosphorus ions is realized, the effect of the high-concentration doping of the phosphorus ions on the erbium ion ligand field can be further enhanced, the gain bandwidth of the doped optical fiber is further expanded, the gain bandwidth of the doped optical fiber is expanded to an L band, the wide-spectrum gain of the doped optical fiber in the expanded L band is realized, and meanwhile, the gain flatness of the doped optical fiber is also facilitated to be improved.
In one possible implementation, the component system of the core comprises: at least one of ytterbium oxide and lanthanum oxide, erbium oxide, silicon dioxide, phosphorus pentoxide, aluminum oxide and a component B, wherein the component B is germanium dioxide or fluoride ions.
I.e. the dopant ions that are doped into the core will be present in a relatively stable form, which is convenient to implement and helps to ensure the stability of the core.
In one possible implementation, the doping concentration of the aluminum ions is 8wt% or more.
Thus, high-concentration doping of aluminum ions is realized, the fiber core is further ensured to have wider gain bandwidth, and the wide spectrum gain of the doped fiber in the extended C wave band 1522nm-1572nm is realized.
In one possible implementation, the doping concentration of the phosphorus ions is greater than or equal to 10wt%.
Thus, the high-concentration doping of the phosphorus ions is realized, the fiber core is further ensured to have wider gain bandwidth, and the wide-spectrum gain of the doped fiber in the extended L-band 1575nm-1627nm is realized.
In one possible implementation, the gain bandwidth of the doped fiber is greater than or equal to 50nm in the C-band, which includes 1522nm-1572nm.
Therefore, the doped optical fiber has wider gain bandwidth in the extended C wave band, the gain bandwidth of the doped optical fiber is effectively improved, and the wide-spectrum gain of the doped optical fiber in the extended C wave band is realized.
In one possible implementation, the doped fiber has a gain bandwidth of 52nm or more in the L-band, which covers at least 1575nm-1627nm.
Therefore, the gain bandwidth of the doped optical fiber is expanded to an L wave band, the gain bandwidth of the doped optical fiber is effectively improved in the expanded L wave band, and the wide-spectrum gain of the doped optical fiber in the expanded L wave band is realized.
In one possible implementation, the doping concentration of the erbium ions is 200ppm to 2000ppm.
The high-concentration doping of erbium ions is realized, the doping concentration of the erbium ions is increased, and the gain performance and the gain bandwidth of the doped optical fiber are improved. And the amplification performance of the doped optical fiber can be reduced or prevented from being influenced by concentration quenching caused by the too high concentration of the erbium ions while the higher doping concentration of the erbium ions is ensured.
In one possible implementation, the ytterbium ions have a doping concentration of 200ppm to 4000ppm.
The doping concentration of ytterbium ions co-doped with erbium ions is in the range, so that clusters of erbium ions can be reduced more effectively, and the doping concentration of erbium ions in the fiber core can be improved.
In one possible implementation, the doping concentration of lanthanum ions is 0.5wt% to 7wt%.
The doping concentration of lanthanum ions in the fiber core doped with lanthanum ions, erbium ions and the like is in the range, so that clusters of erbium ions can be further reduced, and the doping concentration of erbium ions in the fiber core can be improved.
In one possible implementation, the doping concentration of the doping ion a is 0.1wt% to 1wt%.
Therefore, the influence of the too high doping concentration of germanium ions or fluorine ions on the doping of erbium ions and a local coordination field is reduced or avoided while the refractive index of the doped optical fiber can be effectively enhanced.
In one possible implementation, the optical fiber further includes a cladding, a first coating, and a second coating, the cladding wrapping the outer periphery of the core, the first coating wrapping the outer periphery of the cladding, and the second coating wrapping the outer periphery of the first coating.
When the signal light and the pump light enter the doped optical fiber under the condition of meeting the guided wave transmission condition, total reflection can occur between the fiber core and the cladding, so that the signal light can be transmitted in the doped optical fiber, and in the process, the energy of the pump light is transferred to the signal light based on energy level structure matching, so that the amplification of the signal light is realized. The first coating and the second coating which are positioned outside the fiber core and the cladding layer can protect the fiber core and the cladding layer, so that the performance degradation or damage to the fiber core or the cladding layer caused by dust, moisture, mechanical external force and other factors can be reduced or avoided, and the service life of the doped optical fiber is ensured. And the doped optical fiber is provided with two coating layers of the first coating layer and the second coating layer, so that the protection effect on the fiber core and the cladding layer can be enhanced.
In addition, the first coating and the second coating can be elastic coatings, so that the doped optical fiber can be endowed with higher bending resistance, and the loss caused by bending of the doped optical fiber is reduced.
A second aspect of the present application provides a method of preparing a doped optical fiber, the method comprising at least:
providing a tubular preform;
introducing mixed gas into the prefabricated member to deposit and form a doped fiber core layer, wherein the mixed gas comprises at least one of ytterbium ions and lanthanum ions, erbium ions, silicon ions, phosphorus ions, aluminum ions and doped ions A, and the doped ions A are germanium ions or fluorine ions;
preparing a prefabricated rod, and drawing the prefabricated rod to form a doped optical fiber, wherein the doped fiber core layer forms the fiber core of the doped optical fiber, and the doping concentration of aluminum ions in the fiber core is 0.5-12 wt%.
And (3) introducing mixed gas into the prefabricated member for reaction deposition to form a doped fiber core layer, in other words, introducing the mixed gas containing the doped ions for reaction deposition in the process of depositing and forming the fiber core layer, so that doping is realized in the process of depositing and forming the fiber core layer, on one hand, the uniformity of the distribution of the doped fiber core layer is improved, and the performance of the fiber core is improved. On the other hand, the doping ions enter the fiber core layer system in a gas mode and realize doping, so that the distribution uniformity of the doping ions in the fiber core layer can be effectively improved, the doping concentration can be further improved, and the gain performance and the gain bandwidth of the doped fiber can be improved.
In one possible implementation, the introducing a mixed gas into the preform to deposit a doped core layer includes: the doped core layer is deposited within the preform by chemical vapor deposition.
The doped fiber core layer is formed in a chemical vapor deposition mode, so that the uniformity of the distribution of the doped fiber core layer is improved, the performance of the fiber core is improved, and meanwhile, the process is mature, and the method has good practicability.
A third aspect of the present application provides an optical fiber amplifier comprising at least a housing and any of the doped optical fibers described above, the doped optical fibers being disposed within the housing.
The doped fiber is provided with at least one of ytterbium ions and lanthanum ions, erbium ions, aluminum ions, phosphorus ions, doped ions A and other doped ions, so that the doped fiber has higher gain performance, wider gain bandwidth and better gain flatness, and can realize wide-spectrum gain of the doped fiber in an extended C wave band and an extended L wave band.
Drawings
FIG. 1 is a schematic cross-sectional view of a doped fiber according to an embodiment of the present application;
FIG. 2 is a single-stage full-wave amplification gain spectrum of a doped fiber in an extended C-band according to an embodiment of the present application;
FIG. 3 is a single-stage full-wave amplification gain spectrum of a doped fiber in an extended L-band according to an embodiment of the present application;
fig. 4 is a flowchart of a method for preparing a doped optical fiber according to an embodiment of the present application.
Reference numerals illustrate:
100-doped optical fiber;
101-a fiber core;
102-cladding;
103—a first coating;
104-a second coating.
Detailed Description
The terminology used in the description of the embodiments of the application herein is for the purpose of describing particular embodiments of the application only and is not intended to be limiting of the application.
For ease of understanding, related art terms related to the embodiments of the present application are explained and explained first.
Gain, in dB, refers to the difference in optical power (in dBm) between the output and input of an optical amplifier, and is used to represent the amplifying/amplifying capability of the optical amplifier on the input power.
Gain bandwidth refers to the band range of gain.
The conventional C band ranges from 1530nm to 1565nm, and the quartz-based optical fiber shows the lowest loss in the C band, which is the conventional use band of the optical fiber. In order to better utilize the low-loss transmission window of the optical fiber and realize the wavelength division multiplexing with larger capacity, the application of the conventional C wave band is widened from 1530nm-1565nm to the wave band range of 1524nm-1572nm in a wider range, and even the wave band range of 1522nm-1572nm becomes a key path.
L wave band ranging from 1565nm to 1625nm is the second low-loss wave band of quartz-based optical fiber. When the C wave band is insufficient to meet the transmission capacity/bandwidth requirement, the L wave band is added to be multiplexed in the same optical fiber so as to achieve the purpose of multiplying the transmission capacity, and meanwhile, in order to comprehensively utilize the wave band allocation, the L wave band is necessary to be subjected to red shift expansion.
As described in the background above, doped fiber amplifiers are one of the devices commonly used in optical links. The increasing transmission capacity demands place higher demands on the operating bandwidth of optical fibers, as amplifiers in optical links, for example conventional Erbium Doped Fiber Amplifiers (EDFAs), whose gain bandwidth demands are also gradually increased from conventional 35nm to 48nm or 52nm, or more. The optical fiber amplifier adopts the traveling wave amplification principle, when the signal light passes through the fiber core of the optical fiber, the doped ions subjected to pumping action are in an excited state, particles on the excited state generate stimulated radiation under the action of external signal light, and the radiation is superposed on the external signal light, so that the amplification of the signal light is obtained, and therefore, in order to improve the gain bandwidth and the gain performance of the erbium-doped optical fiber amplifier, the gain performance and the gain bandwidth of the erbium-doped optical fiber need to be synchronously improved.
For example, the gain performance and gain bandwidth of the erbium-doped fiber can be optimized by changing the doping concentration, doping profile, and local ligand field of erbium ions in the fiber by changing the components of the fiber and the preparation process. For example, the light emitting characteristic of the erbium-doped optical fiber is improved by adjusting the doping concentration of erbium ions in the core of the optical fiber and matching with at least one of ytterbium ions, lanthanum ions and other doping ions, so that the gain performance and the gain bandwidth can be improved to a certain extent.
However, the gain bandwidth of the doped fiber is still relatively narrow and the gain flatness is poor.
Based on the above, the embodiment of the application provides a doped optical fiber, which can effectively improve the gain bandwidth of the doped optical fiber and the gain flatness of the doped optical fiber, and can realize the gain of the doped optical fiber in an extended C wave band and an extended L wave band.
The doped fiber may be suitable for use in an amplifier or the doped fiber may be suitable for use in other fiber optic signal devices.
The doped optical fiber provided by the embodiment of the application is described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic cross-sectional structure of a doped optical fiber according to an embodiment of the present application.
Referring to fig. 1, a doped optical fiber 100 includes a core 101, and a cladding 102 is wrapped around the core 101. The molding materials of the core 101 and the cladding 102 may be the same, and in this embodiment, the molding substrates of the core 101 and the cladding 102 may be silica, such as quartz glass. Alternatively, the core 101 and the cladding 102 may be formed of different materials.
The refractive index of the core 101 is different from that of the cladding 102, for example, the refractive index of the core 101 may be greater than that of the cladding 102, and the signal light is injected into the doped fiber 100 at a specific incident angle, and total reflection occurs between the core 101 and the cladding 102, so that propagation in the doped fiber 100 may be realized.
The doped optical fiber 100 may further include a coating layer, and in particular, the coating layer may include a first coating layer 103 and a second coating layer 104, wherein the first coating layer 103 may wrap around the outer circumference of the cladding layer 102, and the second coating layer 104 may wrap around the outer circumference of the first coating layer 103. That is, the core 101 is the center point, and the core 101, the cladding 102, the first coating 103, and the second coating 104 are sequentially arranged outward.
The first coating 103 and the second coating 104 can protect the fiber core 101 and the cladding 102, so as to reduce or avoid pollution and damage to the fiber core 101 or the cladding 102 caused by dust, moisture, mechanical external force and other factors, and ensure the service life of the optical fiber 100. In addition, the doped fiber 100 has two coating layers, i.e., a first coating 103 and a second coating 104, which can enhance the protection of the core 101 and the cladding 102.
The molding materials of the first coating 103 and the second coating 104 may be elastic coatings, for example, the first coating 103 and the second coating 104 may be ultraviolet curable acrylic resins. The first coating 103 and the second coating 104 can provide the doped optical fiber 100 with higher bending resistance, and reduce the loss caused by bending the doped optical fiber 100.
Of course, in some examples, the molding materials of the first coating 103 and the second coating 104 may be other materials, or the molding materials of the first coating 103 and the second coating 104 may be different.
In embodiments of the present application, the core 101 has dopant ions therein, i.e., the core 101 is doped with dopant ions to change the composition system of the core 101. For example, a compound or the like including a dopant ion is incorporated during the formation of the core 101, so that the formed core 101 has the dopant ion therein.
Specifically, the dopant ions include at least ytterbium ions (e.g., yb 3+ ) And lanthanum ions (e.g. La 3+ ) At least one of the ions of erbium (e.g. Er) 3+ ) Phosphorus ions (e.g. P 5+ ) Aluminum ions (e.g. Al 3+ ) And small amounts of other doping ions a (e.g. Ge 4+ Or F - ). The doping ions include at least one of ytterbium ions and lanthanum ions, that is, may include only ytterbium ions, or may include only lanthanum ions, or may include both ytterbium ions and lanthanum ions.
Erbium ions, ytterbium ions and lanthanum ions are ions formed by doping rare earth elements in the fiber core 101, and the rare earth elements are stimulated to generate photons. Therefore, when an optical signal passes through the fiber core 101, erbium ions generate higher stimulated radiation under the cooperation of at least one doped ion of ytterbium ions and lanthanum ions, so that the amplification efficiency of the signal light is realized, and the gain performance of the fiber core 101 is improved.
The gain bandwidth of erbium ion is 1530nm-1560nm, which is matched with the minimum loss band of the optical fiber, namely the common C band, so as to help to exert the gain effect of the doped optical fiber 100. In addition, by making at least one of lanthanum ions and ytterbium ions as co-doped ions of erbium ions, in other words, by making at least one of ytterbium ions and lanthanum ions and erbium ions doped in the core 101 in a co-doped manner, the presence of at least one of ytterbium ions and lanthanum ions can increase the interval between erbium ions, improve the dispersibility of the distribution of erbium ions, reduce the concentration quenching effect caused by clusters of erbium ions, thereby contributing to the enhancement of the doping concentration of erbium ions, and further enhance the gain performance and gain bandwidth of the doped optical fiber 100.
Accordingly, co-doping of aluminum ions, phosphorous ions, and dopant ions a in the core 101 also helps to increase the doping concentration of erbium ions, thereby improving the gain performance and gain bandwidth of the doped fiber 100. And the coordination environment of the erbium ions can be changed by the aluminum ions and the phosphorus ions, so that the energy level splitting of the erbium ions is promoted, the gain bandwidth of the doped optical fiber 100 is expanded, and the gain bandwidth of the doped optical fiber 100 can be further effectively improved.
Wherein the doping ion A may be germanium ion, such as Ge 4+ . Alternatively, the dopant ion A may be a fluoride ion, e.g., F - . Germanium ions and fluorine ions can play a role in adjusting the refractive index guided wave of the doped optical fiber 100 and further improve the gain performance of the doped optical fiber 100.
It should be appreciated that the dopant ions doped into the core 101 may exist in a relatively stable form, for example, the dopant ions include ytterbium ions and lanthanum ions, and the forming substrate of the core 101 is SiO 2 The doped ion in the fiber core 101 is Er 3+ 、Yb 3+ 、La 3+ 、P 5+ 、Al 3+ And doping ion a (Ge 4+ Or F - ) The composition system of the finally formed core 101 is: siO (SiO) 2 -Er 2 O 3 -Yb 2 O 3 -La 2 O 3 -P 2 O 5 -Al 2 O 3 -B, i.e. the component system of the core 101 comprises: silicon dioxide (SiO) 2 ) Erbium oxide (Er) 2 O 3 ) Ytterbium trioxide (Yb) 2 O 3 ) Lanthanum oxide (La) 2 O 3 ) Phosphorus pentoxide (P) 2 O 5 ) Aluminum oxide (Al) 2 O 3 ) And a component B, wherein the component B may be germanium dioxide (GeO) 2 ) Or fluoride ion (F) - ). Which is easy to implement and helps to ensure stability of the core 101.
Taking doped ion A as germanium ion as an example, silicon tetrachloride (SiCl is introduced 4 ) To form SiO 2 During the process of the core 101, erbium trichloride (ErCl) 3 ) Ytterbium trichloride (YbCl) 3 ) Lanthanum trichloride (LaCl) 3 ) Phosphorus oxychloride (POCl) 3 ) Aluminum trichloride (AlCl) 3 ) Germanium tetrachloride (GeCl) 4 ) Thus making SiO 2 The core 101 is doped with Er 3+ 、Yb 3+ 、La 3+ 、P 5+ 、Al 3+ And Ge 4+ The component system of the fiber core 101 is SiO 2 -Er 2 O 3 -Yb 2 O 3 -La 2 O 3 -P 2 O 5 -Al 2 O 3 -GeO 2 。
FIG. 2 is a single-stage full-wave amplification gain spectrum of a doped fiber in an extended C-band according to an embodiment of the present application.
Wherein the doping concentration of the aluminum ions is 0.5wt% to 12wt%, and the wt% refers to the mass percentage, that is, the mass percentage of the doped aluminum ions in the fiber core 101 is 0.5% to 12% (including 0.5% and 12%) of Al in the component system of the fiber core 101 2 O 3 Also about 0.5wt% to about 12wt%. The higher concentration doping of aluminum ions is realized, the stronger the effect of the aluminum ion doping concentration on the erbium ion ligand field is, the further the gain bandwidth of the doped optical fiber 100 is expanded, and the wide spectrum gain of the doped optical fiber 100 in the expanded C wave band is realized.
For example, referring to fig. 2, the doped optical fiber 100 with the doping concentration of aluminum ions in the above range has larger gain in all of 1522nm-1572nm of the extended C-band, has stronger gain performance, and has a gain bandwidth of 50nm or more, which effectively improves the gain bandwidth of the doped optical fiber 100 and realizes the wide spectrum gain of the doped optical fiber 100 in the extended C-band.
Referring to fig. 2, when the doped fiber 100 is doped with aluminum ions at a higher concentration, the gain spectrum curve of the doped fiber is slightly fluctuant within the range of 1522nm-1572nm of the extended C-band, and tends to be gentle, that is, the doped fiber 100 doped with aluminum ions at a higher concentration is realized, so that the gain flatness of the doped fiber 100 in the extended C-band can be effectively improved, and the performance of the amplifier is improved.
The doping concentration of aluminum ions may be greater than or equal to 8wt%, for example, the mass percentage of aluminum ions doped in the fiber core 101 is greater than or equal to 8%, so that high-concentration doping of aluminum ions is realized, the fiber core 101 is further ensured to have a wider gain bandwidth, and the wide spectrum gain of the doped fiber 100 in the extended C-band 1522nm-1572nm is realized.
FIG. 3 is a single-stage full-wave amplification gain spectrum of a doped fiber in an extended L-band according to an embodiment of the present application.
In the embodiment of the application, the doping concentration of the phosphorus ions is 0.5wt% to 15wt%, that is, the mass percentage of the doped phosphorus ions in the fiber core 101 is 0.5% to 15% (including 0.5% and 15%) P in the component system of the fiber core 101 2 O 5 The doping concentration of (a) is also about 0.5wt% to 15wt%. The higher concentration doping of the phosphorus ions is realized, the effect of the phosphorus ions on the erbium ion ligand field can be further enhanced by the increase of the phosphorus ion doping concentration, the gain bandwidth of the doped optical fiber 100 is further expanded, the gain bandwidth of the doped optical fiber 100 is expanded to an L wave band, and the wide spectrum gain of the doped optical fiber 100 in the expanded L wave band is realized.
For example, referring to fig. 3, when the doping concentration of the phosphorus ions in the doped optical fiber 100 is in the range of 0.5wt% to 15wt%, the doped optical fiber 100 has a larger gain in the range of 1575nm to 1627nm of the extended L-band, the gain performance is stronger, the gain bandwidth is greater than or equal to 52nm, the gain bandwidth of the doped optical fiber 100 is further effectively improved, and the wide spectrum gain of the doped optical fiber 100 in the extended L-band is realized.
In addition, referring to fig. 3, when the doping concentration of the phosphorus ions in the doped optical fiber 100 is higher, the gain spectrum curve is more gentle in the range of 1575nm-1627nm of the extended L-band, that is, the doping of the phosphorus ions with higher concentration is realized, which is helpful to improve the gain flatness of the doped optical fiber 100 in the extended L-band and improve the performance of the amplifier.
The doping concentration of the phosphorus ions can be more than or equal to 10wt%, namely the mass percentage of the phosphorus ions doped in the fiber core 101 is more than or equal to 10wt%, so that the high-concentration doping of the phosphorus ions is realized, the fiber core 101 is further ensured to have a wider gain bandwidth, and the wide spectrum gain of the doped fiber 100 in the extended L band 1575nm-1627nm is realized.
In embodiments of the application, the erbium ion doping concentration may be 200ppm-2000ppm, where ppm refers to parts per million by mass, i.e., the mass percentage of erbium ion doped in the core 101 is in the range of 200 to 2000 parts per million, (including 200 and 2000 parts per million), er in the constituent system of the core 101 2 O 3 Also about 200ppm to 2000ppm. The doping concentration of erbium ions is increased due to the doping of at least one of ytterbium ions and lanthanum ions, so that the doping concentration of erbium ions is more than or equal to 200ppm, the higher concentration doping of erbium ions is realized, and the gain performance and gain bandwidth of the doped optical fiber 100 are improved.
The doping concentration of erbium ions is between 200ppm and 2000ppm, so that the gain performance of the doped optical fiber 100 can be reduced or prevented from being influenced by concentration quenching caused by the too high concentration of erbium ions on the premise of ensuring the higher doping concentration of erbium ions.
Wherein the ytterbium ion is doped at a concentration of 200ppm to 4000ppm, i.e., the mass percent of ytterbium ion doped in the core 101 is in the range of 200 to 4000 parts per million (including 200 and 4000 parts per million) Yb in the component system of the core 101 2 O 3 Also about 200ppm to 4000ppm. The doping concentration of ytterbium ions co-doped with erbium ions is in the above range, so that clusters of erbium ions can be reduced more effectively to increase the doping concentration of erbium ions in the core 101.
Wherein the doping concentration of lanthanum ions is 0.5wt% to 7wt%, i.e. the mass percentage of lanthanum ions doped in the fiber core 101 ranges from 0.5% to 7% (including 0.5% and 7%), la in the component system of the fiber core 101 2 O 3 Also about 0.5wt% to about 7wt%. By setting the doping concentration of lanthanum ions co-doped with erbium ions to the above range, clusters of erbium ions can be further reduced, which contributes to an increase in the doping concentration of erbium ions in the core 101.
The concentration of the dopant ion A may be 0.1wt% to 1wt%, that is, the mass percentage of the dopant ion A doped in the fiber core 101 is 0.1wt% to 1wt% (including 0.1wt% and 1 wt%), taking the dopant ion A as germanium ion as an example, geO in the component system of the fiber core 101 2 Also about 0.1wt% to about 1wt%. The degradation of erbium ion doping and luminescence characteristics due to too high doping concentration of germanium ions or fluorine ions is reduced or avoided while ensuring that the refractive index of the doped optical fiber 100 can be effectively adjusted.
Fig. 4 is a flowchart of a method for preparing a doped optical fiber according to an embodiment of the present application.
The embodiment of the application also provides a preparation method of the doped optical fiber, which is shown in fig. 4, and comprises the following steps:
s101: a tubular preform is provided.
Wherein the preform may be used to form the cladding 102 in a subsequent step, the preform may be formed of the same material as the cladding 102. For example, the preform may be silica, the preform may be a glass tube, or the preform may be a quartz tube, although in some other examples, the preform may be a tubular structure of other materials.
In the embodiment of the application, the pipe wall of the prefabricated part can be thinner, for example, the prefabricated part is a thin-wall quartz pipe, and the wall thickness of the prefabricated part can be 1.5mm-3mm.
In step S101, the method may further include: and cleaning the prefabricated part.
The preform is cleaned to remove impurities from the preform and avoid adverse effects on subsequently formed doped optical fibers. Specifically, the cleaning mode may be to clean the preform with a chemical, for example, hydrofluoric acid may be used to clean the quartz tube.
Of course, in some other examples, other ways of cleaning the preform may be used.
After cleaning the preform, step S101 may further include: and polishing the prefabricated member.
In particular, the preform may be subjected to a high temperature polishing, the polishing gas may be sulfur hexafluoride (SF 6 ) Of course, in some other examples, the polishing gas may also be other gases.
S102: and introducing mixed gas into the prefabricated member to deposit and form a doped fiber core layer, wherein the mixed gas comprises at least one of ytterbium ions and lanthanum ions, erbium ions, silicon ions, phosphorus ions, aluminum ions and doped ions A.
That is, the above-described dopant ions are doped in the core layer at the same time as the deposition to form the core layer. The mixed gas contains main component ions, such as silicon ions, for forming the fiber core layer, so that at the same time of depositing the fiber core layer, at least one of ytterbium ions and lanthanum ions, erbium ions, phosphorus ions, aluminum ions and doped ions A are doped, and finally the doped fiber core layer is formed on the inner wall of the prefabricated member.
Wherein, the doping ions comprise ytterbium ions and lanthanum ions, and the mixed gas can comprise silicon tetrachloride (SiCl) 4 ) To form SiO 2 A core layer. The mixed gas may further include a compound having the above-mentioned dopant ions, for example, a dopant ion A is germanium ion, and erbium trichloride (ErCl) 3 ) Ytterbium trichloride (YbCl) 3 ) Lanthanum trichloride (LaCl) 3 ) Phosphorus oxychloride (POCl) 3 ) Aluminum trichloride (AlCl) 3 ) Germanium tetrachloride (GeCl) 4 ) Thereby forming SiO during deposition 2 In the process of the fiber core layer, in SiO 2 Er doped in fiber core layer 3+ 、Yb 3+ 、La 3+ 、P 5+ 、Al 3+ And Ge 4+ Obtaining a doped fiber core layer, and further enabling the system component of the finally obtained fiber core to be SiO 2 -Er 2 O 3 -Yb 2 O 3 -La 2 O 3 -P 2 O 5 -Al 2 O 3 -GeO 2 Wherein Al is 3+ The doping concentration of (2) may be 0.5wt% to 12wt%.
By introducing a mixture of gases into the preform to form a doped core layer, in other words by introducing a gas mixture containing silicon tetrachloride (SiCl 4 ) Is deposited to form SiO 2 During the process of the fiber core, the Yb can be mixed and introduced 3+ And La (La) 3+ At least one of Er and Er 3+ 、P 5+ 、Al 3+ And the mixed gas of doping ions such as doping ion A, thereby realizing doping in the process of depositing and forming the fiber core layer, being beneficial to improving the uniformity of the distribution of the doped fiber core layer and improving the performance of the fiber core. On the other hand, the doping ions enter the fiber core layer system in a gas mode and realize doping, so that the distribution uniformity of the doping ions in the fiber core layer can be effectively improved, the doping concentration is further improved, and the gain performance and the gain bandwidth of the doped fiber are improved.
Specifically, mixed gas can be introduced into the prefabricated member, a doped fiber core layer is formed in the prefabricated member through deposition by an improved chemical vapor deposition method (Modified Chemical Vapor Deposition; MCVD), and the chemical vapor deposition method is mature in process and has good practicability.
For example, a mixture of gases may be introduced into the cleaned and polished preform, which may include: oxygen-carried silicon tetrachloride, oxygen-carried phosphorus oxychloride, oxygen-carried germanium tetrachloride, at least one of ytterbium trichloride and lanthanum trichloride carried by inert gas, erbium trichloride carried by inert gas and aluminum trichloride carried by inert gas, and then carrying out chemical reaction under the high-temperature condition, and depositing a fiber core layer containing doped ion oxide on the inner wall of the prefabricated member.
Wherein, a doped fiber core layer is formed on the inner wall of the prefabricated member by using a chemical vapor deposition method, and the specific conditions of the deposition process can be selected and set according to actual requirements. Specifically, for example, the temperature of deposition may be 1600-2050 ℃, the number of layers deposited may be 2-5 layers, and the like.
In addition, in some examples, in the step S102, helium with high purity may be introduced during the whole process of depositing the doped core layer, so as to perform the functions of rapid equalization of the temperature field and inert gas protection.
S103: forming a preform, and drawing the preform to form a doped fiber, the doped core layer forming a core of the doped fiber, and the doping concentration of aluminum ions in the core may be 0.5wt% to 12wt%.
Specifically, forming the preform in step S103 may include:
the preform, i.e., the preform having the doped core layer deposited thereon, i.e., the preform obtained after step S102 is subjected to a high temperature treatment to melt-shrink it into a core rod or preform at a high temperature. Specifically, the temperature range of the melt shrinkage can be 1800-2300 ℃.
And sleeving a core rod or a prefabricated rod which does not meet the final optical fiber core-to-core ratio, sleeving an outer tube with a proper size outside a column body of the core rod or the prefabricated rod, and shrinking the outer tube at high temperature to form a finished prefabricated rod, so that the finished prefabricated rod meets the final target optical fiber core-to-core ratio after subsequent drawing. Wherein the temperature of the melt shrinkage in this step may be in the range of 2000 to 2300 ℃.
The wall of the sleeved outer tube and the wall of the prefabricated member are commonly used for forming the cladding 102, and the forming material of the sleeved outer tube may be the same as the forming material of the prefabricated member, for example, both the sleeved outer tube and the prefabricated member may be quartz tubes.
In step S103, before drawing the preform to form the doped fiber, the method may further include:
and connecting a handle rod on the prefabricated rod, and performing flame polishing.
Wherein, the preform rod is connected with the handle rod so as to be convenient to operate for carrying out subsequent polishing treatment.
The specific conditions for polishing the preform can be selected and set according to actual requirements. For example, the polishing temperature may be 1800 ℃ to 1900 ℃.
In step S103, the preform is drawn to form a doped optical fiber, specifically, the preform is drawn into the doped optical fiber in a state of high temperature melting, the core layer located in the preform forms the core 101 of the doped optical fiber, and the wall of the sleeved outer tube and the wall of the preform form the cladding 102 of the optical fiber.
The specific conditions of the wire drawing operation can be selected and set according to actual requirements, for example, the temperature of the wire drawing can be 2050-2150 ℃, and the speed of the wire drawing can be 60-100 m/min.
After the above step S103 is completed, the method may further include:
a first coating layer is coated on the outer periphery of the cladding layer, and a second coating layer is coated on the outer periphery of the first coating layer.
The molding materials of the first coating 103 and the second coating 104 may be the same, for example, the first coating 103 and the second coating 104 are both ultraviolet curable acrylic resins.
The doped optical fiber 100 can be formed through the steps, and the method is mature in process, has high practicability, and is beneficial to improving the uniformity of doped ions in the doped optical fiber and further improving the performance of the doped optical fiber. The gain bandwidth of erbium ions in the doped optical fiber formed by the method covers 1530nm-1560nm, and is matched with the common C wave band of the optical fiber, so that the gain characteristic of the doped optical fiber can be effectively utilized. In addition, at least one of ytterbium ions and lanthanum ions is used as a co-doped ion of erbium ions, clusters of the erbium ions can be reduced, and the solubility of the erbium ions is improved, so that the doping concentration of the erbium ions is improved, and the gain performance and the gain bandwidth of the doped optical fiber are further improved.
In addition, the coordination environment of the erbium ions can be changed by the aluminum ions and the phosphorus ions, so that the energy level splitting of the erbium ions is promoted, the gain bandwidth of the doped optical fiber is expanded, and the gain bandwidth of the doped optical fiber is improved.
Meanwhile, the doping concentration of aluminum ions is 0.5-12 wt%, so that high-concentration doping of aluminum ions is realized, the gain bandwidth of the doped optical fiber is further expanded, and the wide-spectrum gain of the doped optical fiber in the expanded C wave band is realized. In addition, the doping concentration of the phosphorus ions can be 0.5-15 wt%, so that the high-concentration doping of the phosphorus ions is realized, the gain bandwidth can be further expanded, and the wide-spectrum gain of the doped optical fiber in the expanded L wave band is realized.
The following describes in detail a preparation method of a doped optical fiber according to an embodiment of the present application with specific examples.
Example one
Taking a prefabricated member as a quartz tube, and taking erbium ions, ytterbium ions, lanthanum ions, phosphorus ions, aluminum ions and germanium ions as examples of doping ions in a doped fiber core, the specific preparation method of the doped fiber core comprises the following steps:
and cleaning the quartz tube, and performing high-temperature polishing treatment on the quartz tube.
Introducing mixed gas into the quartz tube, wherein the mixed gas comprises the following components: oxygen-carrying SiCl 4 、POCl 3 、GeCl 4 Inert gas carried ErCl3 and YbCl 3 、LaCl 3 、AlCl 3 And deposited at high temperature to form a doped core layer.
And (3) shrinking the rod at high temperature to form a core rod or a prefabricated rod, sleeving a quartz tube with proper size outside the core rod according to the target core-to-sheath ratio, and shrinking the quartz tube at high temperature to form the finished prefabricated rod.
Connecting a handle bar to the preform, polishing the preform, and then heating the preformDrawing wires to form a doped optical fiber, wherein the doped fiber core layer forms the fiber core of the optical fiber, and the wall of the quartz tube forms the cladding of the optical fiber. The system components of the fiber core are as follows: siO (SiO) 2 -Er 2 O 3 -Yb 2 O 3 -La 2 O 3 -P 2 O 5 -Al 2 O 3 -GeO 2 Wherein Er in the fiber core 3+ The doping concentration of Yb is 200ppm-2000ppm 3+ Has a doping concentration of 200ppm to 2000ppm, la 3+ The doping concentration of (2) is 0.5-7wt%, al 3+ The doping concentration of (2) is 8-12 wt%, P 5+ The doping concentration of the Ge is 0.5wt% to 10wt% 4+ The doping concentration of (2) is 0.1wt% to 1wt%.
A first coating layer and a second coating layer are sequentially coated on the outer periphery of the cladding layer.
The doped optical fiber obtained by the method can realize wide spectrum gain in an extended C wave band, and has higher gain performance and wider gain bandwidth.
Example two
Taking a prefabricated member as a quartz tube, and taking erbium ions, ytterbium ions, lanthanum ions, phosphorus ions, aluminum ions and germanium ions as examples of doping ions in a doped fiber core, the specific preparation method of the doped fiber core comprises the following steps:
and cleaning the quartz tube, and performing high-temperature polishing treatment on the quartz tube.
Introducing mixed gas into the quartz tube, wherein the mixed gas comprises the following components: oxygen-carrying SiCl 4 、POCl 3 、GeCl 4 Inert gas ErCl 3 、YbCl 3 、LaCl 3 、AlCl 3 And deposited at high temperature to form a doped core layer.
And (3) shrinking the rod at high temperature to form a core rod or a prefabricated rod, sleeving a quartz tube with proper size outside the core rod according to the target core-to-sheath ratio, and shrinking the quartz tube at high temperature to form the finished prefabricated rod.
And connecting a handle rod on the preform rod, polishing the preform rod, drawing the preform rod at high temperature to form a doped optical fiber, forming a fiber core of the optical fiber by a doped fiber core layer, and forming a cladding of the optical fiber by a quartz tube wall. The system components of the fiber core are as follows: siO (SiO) 2 -Er 2 O 3 -Yb 2 O 3 -La 2 O 3 -P 2 O 5 -Al 2 O 3 -GeO 2 Wherein Er in the fiber core 3+ The doping concentration of Yb is 200ppm-2000ppm 3+ Has a doping concentration of 200ppm to 2000ppm, la 3+ The doping concentration of (2) is 0.5-7wt%, al 3+ The doping concentration of (C) is 0.5-8wt%, P 5+ The doping concentration of the Ge is 10wt% to 15wt% 4+ The doping concentration of (2) is 0.1wt% to 1wt%.
A first coating layer and a second coating layer are sequentially coated on the outer periphery of the cladding layer.
The doped optical fiber obtained by the method can realize wide spectrum gain in an extended L wave band, and has higher gain performance and wider gain bandwidth.
It should be noted that, the numerical values and the numerical ranges related to the embodiments of the present application are approximate values, and may have a certain range of errors under the influence of the manufacturing process, and those errors may be considered to be negligible by those skilled in the art.
The embodiment of the application also provides an optical fiber amplifier, and in particular, the optical fiber amplifier can comprise a shell and any doped optical fiber, wherein the doped optical fiber is arranged in the shell.
Of course, in some other examples, the fiber amplifier may also include other functional devices, such as pump laser devices, optically passive devices, control units, optical isolator devices, fiber connection devices, and the like.
In describing embodiments of the present application, it should be noted that, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "coupled" should be construed broadly, and may be, for example, fixedly coupled, indirectly coupled through an intermediary, in communication between two elements, or in an interaction relationship between two elements. The specific meaning of the above terms in the embodiments of the present application will be understood by those of ordinary skill in the art according to specific circumstances. The terms "first," "second," "third," "fourth," and the like, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the embodiments of the present application, and are not limited thereto; although embodiments of the present application have been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.

Claims (15)

1. A doped optical fiber comprising a core having dopant ions therein;
the doping ions at least comprise: at least one of ytterbium ions and lanthanum ions, erbium ions, phosphorus ions, aluminum ions and doped ions A, wherein the doped ions A are germanium ions or fluorine ions;
the doping concentration of the aluminum ions is 0.5-12 wt%.
2. The doped optical fiber of claim 1, wherein the phosphorus ion has a doping concentration of 0.5wt% to 15wt%.
3. A doped optical fiber according to claim 1 or 2, wherein the component system of the core comprises: at least one of ytterbium oxide and lanthanum oxide, erbium oxide, silicon dioxide, phosphorus pentoxide, aluminum oxide and a component B, wherein the component B is germanium dioxide or fluoride ions.
4. A doped optical fiber according to any one of claims 1 to 3, wherein the doping concentration of aluminum ions is 8wt% or more.
5. The doped optical fiber according to any one of claims 1 to 4, wherein the doping concentration of the phosphorus ions is 10wt% or more.
6. A doped optical fiber according to any one of claims 1 to 5, wherein the doped optical fiber has a gain bandwidth of 50nm or more in the C-band, said C-band comprising 1522nm to 1572nm.
7. The doped fiber of claim 2, wherein the doped fiber has a gain bandwidth of 52nm or more in the L-band, the L-band comprising 1575nm-1627nm.
8. A doped optical fiber according to any of claims 1-7, wherein the doping concentration of erbium ions is 200ppm-2000ppm.
9. A doped optical fiber according to any of claims 1-8, wherein the doping concentration of ytterbium ions is 200ppm-4000ppm.
10. A doped optical fiber according to any of claims 1-9, wherein the doping concentration of lanthanum ions is 0.5wt% to 7wt%.
11. A doped optical fiber according to any of claims 1-10, wherein the doping concentration of doping ion a is 0.1wt% to 1wt%.
12. The doped optical fiber of any one of claims 1-11, further comprising a cladding, a first coating, and a second coating, the cladding surrounding the periphery of the core, the first coating surrounding the periphery of the cladding, the second coating surrounding the periphery of the first coating.
13. A method of making a doped optical fiber, the method comprising:
providing a tubular preform;
introducing mixed gas into the prefabricated member to deposit and form a doped fiber core layer, wherein the mixed gas comprises at least one of ytterbium ions and lanthanum ions, erbium ions, silicon ions, phosphorus ions, aluminum ions and doped ions A, and the doped ions A are germanium ions or fluorine ions;
forming a preform and drawing the preform to form a doped optical fiber, the doped core layer forming a core of the doped optical fiber, and the doping concentration of the aluminum ions in the core being 0.5wt% to 12wt%.
14. The method of claim 13, wherein the introducing a mixture of gases into the preform to deposit a doped core layer comprises: the doped core layer is formed within the preform by chemical vapor deposition.
15. An optical fiber amplifier comprising at least a housing and a doped optical fiber according to any of the preceding claims 1-12, said doped optical fiber being arranged within said housing.
CN202210227638.3A 2022-03-08 2022-03-08 Doped optical fiber, optical fiber amplifier and preparation method of doped optical fiber Pending CN116768464A (en)

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