CN116741795A - Light-emitting panel, preparation method thereof, light-emitting device and backlight module - Google Patents

Light-emitting panel, preparation method thereof, light-emitting device and backlight module Download PDF

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Publication number
CN116741795A
CN116741795A CN202310802349.6A CN202310802349A CN116741795A CN 116741795 A CN116741795 A CN 116741795A CN 202310802349 A CN202310802349 A CN 202310802349A CN 116741795 A CN116741795 A CN 116741795A
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bonding
unit
light
bonding unit
pad
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请求不公布姓名
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Tianma New Display Technology Research Institute Xiamen Co ltd
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Tianma New Display Technology Research Institute Xiamen Co ltd
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Priority to CN202310802349.6A priority Critical patent/CN116741795A/en
Publication of CN116741795A publication Critical patent/CN116741795A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a light-emitting panel and a preparation method thereof, a light-emitting device and a backlight module, wherein the light-emitting panel comprises a driving substrate and a plurality of light-emitting elements; a plurality of first pad units are arranged on one side of the driving substrate, which is close to the light-emitting element; a second bonding pad unit is arranged on one side of the light-emitting element, which is close to the driving substrate; at least one of the first bonding pad unit and the second bonding pad unit is provided with a bonding unit, the bonding unit comprises a first bonding unit and a second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit. The technical scheme provided by the invention improves the bonding reliability and flexibility of the bonding unit, ensures that the bonding unit can be repeatedly bonded for a plurality of times, avoids one-time failure or damage of the bonding unit, simplifies the repairing process, and is beneficial to improving the repairing rate of the light-emitting element.

Description

Light-emitting panel, preparation method thereof, light-emitting device and backlight module
Technical Field
The present invention relates to the field of display technologies, and in particular, to a light emitting panel, a manufacturing method thereof, a light emitting device and a backlight module.
Background
The basic process of current Micro LED massive repair is that Micro LED chips are bonded with a display substrate in a massive manner, then the bonded Micro LED chips are detected, the Micro LED chips with abnormal detection are removed through laser pulses, then bonding pads of the display substrate after the chips are removed are cleaned up, new bonding materials are transferred to bonding pads at positions to be repaired, and finally the new Micro LED chips are transferred to the positions to be repaired and are bonded.
However, after a huge amount of Micro LED chips are bonded, the Micro LED chips are firmly connected with the bonding pads of the display substrate, and the chips need to be removed by means of laser pulses with larger energy, so that the back plate and the bonding pads on the back plate are easily damaged, the back plate is damaged or cannot be bonded secondarily, and in addition, because the bonding pads of the Micro LED display substrate are smaller, the gaps between the P electrode and the N electrode are small (typically less than 10 um), and it is difficult to transfer new bonding materials to the bonding pads at the positions to be repaired.
Disclosure of Invention
The invention provides a light-emitting panel, a preparation method thereof, a light-emitting device and a backlight module, which are used for improving the bonding reliability and flexibility of a bonding unit, ensuring that the bonding unit can be repeatedly bonded for a plurality of times, avoiding one-time failure or damage of the bonding unit, simplifying the repairing process and being beneficial to improving the repairing rate of a light-emitting element.
In a first aspect, an embodiment of the present invention provides a light-emitting panel including a driving substrate and a plurality of light-emitting elements;
a plurality of first pad units are arranged on one side of the driving substrate, which is close to the light-emitting element;
a second bonding pad unit is arranged on one side, close to the driving substrate, of the light-emitting element;
and at least one bonding pad unit of the first bonding pad unit and the second bonding pad unit is provided with a bonding unit, the bonding unit comprises a first bonding unit and a second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a light emitting panel, including:
providing a driving substrate, wherein one side of the driving substrate is provided with a plurality of first bonding pad units;
providing a plurality of light emitting elements, wherein one side of each light emitting element is provided with a second pad unit;
and a bonding unit is arranged on at least one bonding pad unit of the first bonding pad unit and the second bonding pad unit, the bonding unit comprises a first bonding unit and a second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit.
In a third aspect, embodiments of the present invention provide a light emitting device comprising a light emitting panel according to the first aspect.
In a third aspect, an embodiment of the present invention provides a backlight module, including the light-emitting panel according to the first aspect.
According to the scheme provided by the invention, the bonding unit comprises the first bonding unit and the second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit, so that the first bonding pad unit and the second bonding pad unit are electrically connected only through the first bonding unit or are electrically connected through the first bonding unit and the second bonding unit at the same time according to different bonding requirements, the bonding reliability and flexibility of the bonding unit are improved, the bonding unit can be repeatedly bonded for many times, the bonding unit or the bonding pad unit cannot be subjected to secondary bonding due to one-time failure or damage, the repairing process is simplified, and the repairing rate of the light-emitting element is improved.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, a brief description will be given below of the drawings required for the embodiments or the description of the prior art, and it is obvious that although the drawings in the following description are specific embodiments of the present invention, it is obvious to those skilled in the art that the basic concepts of the device structure, the driving method and the manufacturing method, which are disclosed and suggested according to the various embodiments of the present invention, are extended and extended to other structures and drawings, and it is needless to say that these should be within the scope of the claims of the present invention.
Fig. 1 is a schematic top view of a light-emitting panel according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of FIG. 1 along section line A-A';
fig. 3 is a schematic top view of a bonding unit according to an embodiment of the present invention;
FIG. 4 is a schematic top view of another bonding unit according to an embodiment of the present invention;
FIG. 5 is a schematic top view of another bonding unit according to an embodiment of the present invention;
FIG. 6 is a schematic top view of another bonding unit according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a partial top view structure of a light emitting panel according to an embodiment of the present invention;
FIG. 8 is a schematic top view of another embodiment of a light-emitting panel according to the present invention;
fig. 9 is a flowchart of a method for manufacturing a light-emitting panel according to an embodiment of the present invention;
FIG. 10 is a flowchart of another method for manufacturing a light-emitting panel according to an embodiment of the present invention;
FIG. 11 is a flowchart of a method for manufacturing a light-emitting panel according to an embodiment of the present invention;
fig. 12 is a schematic cross-sectional view of a driving substrate according to an embodiment of the present invention;
fig. 13 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;
fig. 14 is a schematic cross-sectional view of another driving substrate according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram of a light emitting device according to an embodiment of the present invention;
fig. 16 is a schematic structural diagram of a backlight module according to an embodiment of the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described by means of implementation examples with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments obtained by those skilled in the art based on the basic concepts disclosed and suggested by the embodiments of the present invention are within the scope of the present invention.
Fig. 1 is a schematic top view of a light-emitting panel according to an embodiment of the present invention, fig. 2 is a schematic cross-sectional view of fig. 1 along a sectional line A-A', and referring to fig. 1 and fig. 2, the light-emitting panel 100 includes a driving substrate 10 and a plurality of light-emitting elements 20; a plurality of first pad units 30 are disposed on one side of the driving substrate 10 adjacent to the light emitting element 20; the side of the light emitting element 20 near the driving substrate 10 is provided with a second pad unit 40; at least one of the first and second pad units 30 and 40 is provided with a bonding unit 50, and the bonding unit 50 includes a first bonding unit 51 and a second bonding unit 52, and the melting point of the first bonding unit 51 is less than that of the second bonding unit 52.
It is understood that the specific arrangement of the light emitting structures 20 on the driving substrate 10 of the light emitting panel 100 may be set according to actual requirements, and fig. 1 is only exemplary and not limited thereto. It should be noted that, since the first pad unit 30, the bonding unit 50, and the second pad unit 40 are stacked and the specific shapes thereof may be the same or different, each film structure cannot be seen from the top view, and thus fig. 1 only illustrates the first pad unit 30, the bonding unit 50, and the second pad unit 40 by way of example, and the specific sizes and shapes thereof may be set according to actual requirements.
Wherein the shape and the relative position of the first and second bonding units 51 and 52 may be set according to actual requirements. By way of example, fig. 1 shows that the projections of the first bonding unit 51 and the second bonding unit 52 on the driving substrate 10 are rectangular, the first bonding unit 51 is located at one side of the second bonding unit, and fig. 1 is merely exemplary, but is not limited thereto. In addition, the structures of the first bonding unit 51 and the second bonding unit 52 in the same bonding unit 50 may be the same or different, that is, the bonding unit 50 may be a single-film layer structure or a multi-film layer composite structure, which is not specifically limited herein, and may be set according to actual needs.
With continued reference to fig. 2, the driving substrate 10 may include a substrate 11 and an array layer 12 disposed in a stack, wherein the array layer 12 includes a pixel circuit 120 for electrically connecting with the light emitting element 20, and fig. 2 exemplarily shows a structure of one transistor in the pixel circuit 120 including an active layer 121, a gate electrode 122, and source and drain electrodes 123 and 124. The driving substrate 10 further includes a first connection electrode 131 and a second connection electrode 132, wherein a plurality of first pad units 30 are disposed on a side of the first connection electrode 131 and the second connection electrode 132, which is close to the light emitting element 20, and a second pad unit 40 is disposed on a side of the light emitting element 20, which is close to the driving substrate 10, and the first pad units 30 and the second pad units 40 are electrically connected through the bonding unit 50.
The light emitting element 20 may be a current driven light emitting structure such as an LED, for example, a Micro LED or a Mini LED, where the Mini LED has a size of 50 micrometers to 200 micrometers and the Micro LED has a size of less than 50 micrometers. In the present embodiment, micro LEDs may be employed as the light emitting element 20 to obtain the Micro LED light emitting panel 100.
The materials of the first pad unit 30 and the second pad unit 40 include conductive materials, such as one or more of copper, silver, aluminum, iron, tin, etc., or an alloy thereof, or conductive materials such as Indium Tin Oxide (ITO), etc., which may be specifically set according to practical requirements. The size and shape of the pad unit may be matched to the connection electrode of the light emitting element 20, which is not particularly limited herein, and fig. 2 is merely exemplary.
Further, before the first pad unit 30 on the side of the driving substrate 10 and the second pad unit 40 on the side of the light emitting structure 20 are electrically connected, the bonding unit 50 may be located on the side of the first pad unit 30, or may be located on the side of the second pad unit 40, or a part of the bonding unit 50 is disposed on each of the first pad unit 30 and the second pad unit 40, which is not limited herein, and may be disposed according to practical requirements.
With continued reference to fig. 1 and 2, the melting point of the first bonding unit 51 is set to be smaller than that of the second bonding unit 52, so that only the first bonding unit 51 can be bonded, or the first bonding unit 51 and the second bonding unit 52 can be bonded at the same time according to different bonding requirements, so that the bonding reliability and flexibility of the bonding unit 50 are improved, when the light-emitting element 20 is detected and repaired, only the first bonding unit 51 can be bonded, and when the light-emitting element 20 is finally bonded, the first bonding unit 51 and the second bonding unit 52 can be bonded, so that the bonding unit 50 can be bonded repeatedly for a plurality of times, and one-time failure or damage of the bonding unit 50 can not be caused, thereby being beneficial to improving the repair rate of the light-emitting element 20. Further, even if a part of the pad unit is damaged during the repeated bonding of the first bonding unit 51, the integrity of the other part of the pad unit bonded with the second bonding unit 52 is not affected, and it is ensured that the light emitting element 20 and the driving substrate 10 can be reliably connected.
It should be noted that the bonding unit 50 is a multi-film composite structure, which includes multiple metal layers. The number of metal layers included in the first bonding unit 51 and the second bonding unit 52 may be the same or different, and is not particularly limited herein, and alternatively, the first bonding unit 51 and the second bonding unit 52 may have the same number of metal layers, i.e., the heights of the first bonding unit 51 and the second bonding unit 52 in the thickness direction Z of the light emitting panel are the same, which is advantageous for improving the flatness of the light emitting panel 100.
In this embodiment, the bonding unit includes the first bonding unit and the second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit, so that the first bonding pad unit and the second bonding pad unit are only electrically connected through the first bonding unit, or the first bonding pad unit and the second bonding pad unit are simultaneously electrically connected through the first bonding unit and the second bonding unit, so as to improve the bonding reliability and flexibility of the bonding unit, so that the bonding unit can be repeatedly bonded for many times, and the bonding unit or the bonding pad unit cannot be secondarily bonded due to one-time failure or damage, thereby simplifying the repairing process and being beneficial to improving the repairing rate of the light-emitting element.
It should be noted that, for ease of understanding and description of the solution, the uniform bonding units are rectangular in the following embodiments, and the first bonding unit is located at one side of the second bonding unit for exemplary description, without specific description.
Optionally, with continued reference to fig. 1 and 2, the bonding process of the light emitting element 20 and the driving substrate 10 includes at least a first bonding stage in which the first pad unit 30 and the second pad unit 40 are electrically connected by the first bonding unit 51, and a second bonding stage in which the first pad unit 30 and the second pad unit 40 are electrically connected by the first bonding unit 51 and the second bonding unit 52.
Specifically, the first bonding stage may refer to a pre-bonding process of the light emitting element 20 and the driving substrate 10, in which the first bonding pad unit 30 and the second bonding pad unit 40 are electrically connected only through the first bonding pad unit 51, so as to facilitate detection and repair of the light emitting element 20, that is, when an abnormality of the light emitting element 20 is detected, the first bonding pad unit 51 of the abnormal light emitting element 20 may be irradiated only with a laser pulse with lower energy, so that the first bonding pad unit 51 is melted, and the abnormal light emitting element 20 is peeled off. It is understood that, since the melting point of the second bonding unit 52 is greater than that of the first bonding unit 51, the laser irradiation temperature is lower than that of the second bonding unit 52 in the process of peeling off the abnormal light emitting element 20, and the second bonding unit 52 is not melted, i.e., the second bonding unit 52 is not affected by any influence.
Further, if the light emitting element 20 can work normally, or after repairing all abnormal light emitting elements 20, the second bonding stage may be performed, that is, the final pre-bonding process between the light emitting element 20 and the driving substrate 10 may be performed directly, at this time, the irradiation may be performed by using a laser pulse with higher energy, and the irradiation temperature needs to be greater than the melting point of the second bonding unit 52, so that the first bonding unit 51 and the second bonding unit 52 can bond, that is, the first pad unit 30 and the second pad unit 40 are electrically connected through the first bonding unit 51 and the second bonding unit 52 at the same time, so as to improve the reliability and stability of bonding.
In this way, in the different bonding stages of the bonding process of the light emitting element 20 and the driving substrate 10, the bonding of the different bonding units 50 can be performed, so that the bonding reliability and flexibility of the bonding units can be improved, the bonding units can be repeatedly bonded for many times, the bonding units cannot be failed or damaged at one time, the repair rate of the light emitting element can be improved, and the normal operation of the light emitting panel can be ensured.
Alternatively, with continued reference to fig. 2, the first bonding unit 51 and the second bonding unit 52 are arranged along a first direction X, which is parallel to a plane on which the driving substrate 10 is located.
Specifically, the first bonding unit 51 and the second bonding unit 52 are arranged along the first direction X, that is, the first bonding unit 51 and the second bonding unit 52 cannot be stacked, so that when the first bonding pad unit 30 of the driving substrate 10 and the second bonding pad unit 40 on the light emitting element 20 side are bonded to the first bonding unit 51 and the second bonding unit 52 at the same time, it is ensured that the first bonding unit 51 and the second bonding unit 52 can both contact the first bonding pad unit 30 and the second bonding pad unit 40, thereby improving the stability and reliability of the electrical connection of the first bonding pad unit 30 and the second bonding pad unit 40. In addition, even if the first bonding unit 51 and the second bonding unit 52 are stacked, the first bonding unit 51 and the second bonding unit 52 can both be brought into contact with the first pad unit 30 and the second pad unit 40, but the height of the entire bonding unit 50 in the thickness direction Z of the light emitting panel can be large, which is disadvantageous for the light and thin design of the light emitting panel.
Optionally, with continued reference to fig. 2, the first bonding unit comprises SnBi x1 In y1 Alloy, biIn y1 Alloy, snBi x1 Alloy or SnIn y1 At least one of the alloys; the second bonding unit comprises Sn, snAg x2 Cu y2 Alloy, snAg x2 Alloy, snCu y2 Alloy or SnSn z1 At least one of the alloys.
Specifically, the material of the first bonding unit 51 may beSnBi x1 In y1 Alloy, biIn y1 Alloy, snBi x1 Alloy or SnIn y1 At least one of the alloys, or a trace amount of Ag or Cu and other elements are added on the basis of any one of the materials. For example, the first bonding unit 51 employs SnBi having a melting point ranging from 60℃to 90 ℃and 57 In 28 BiIn with melting point ranging from 80 ℃ to 100 DEG C 50 SnBi with melting point in 135-145 DEG C 57 Or SnIn with melting point ranging from 110 ℃ to 130 DEG C 50 Etc. The material of the second bonding element 52 may be Sn, snAg x2 Cu y2 Alloy, snAg x2 Alloy, snCu y2 Alloy or SnSn z1 At least one of the alloys, or a trace amount of Bi, ni or Zn elements is added to any of the above materials. For example, the second bonding element 52 may be made of SnAg having a melting point in the range of 210 ℃ to 230 DEG C 3 Cu 0.5 SnAg with melting point ranging from 210 ℃ to 230 DEG C 3.5 SnCu with melting point ranging from 220 ℃ to 240 DEG C 0.7 SnSn with melting point ranging from 240 ℃ to 260 DEG C 9 Or SnIn with a melting point ranging from 200 ℃ to 220 ℃. The specific materials of the first bonding unit 51 and the second bonding unit 52 are not limited in the embodiment of the present invention, and may be set according to actual requirements, so long as the melting point of the first bonding unit 51 is smaller than that of the second bonding unit 52.
Alternatively, the first bonding unit 51 and the second bonding unit 52 include the same metal element.
Specifically, the first bonding unit 51 and the second bonding unit 52 include the same metal element, such as Sn, which is beneficial to simplifying the manufacturing process of the first bonding unit 51 and the second bonding unit 52, and improving the firmness of the overall bonding of the bonding unit 50 after bonding the first bonding unit 51 and the second bonding unit 52, so as to ensure the reliable operation of the light-emitting panel.
It should be noted that the same metal element of the first bonding unit 51 and the second bonding unit 52 may be one or more, and even the materials of the first bonding unit 51 and the second bonding unit 52 are completely the same, only part of the metal elementsThe content of (c) is not particularly limited and may be adaptively set according to actual conditions. Exemplary, the material of the first bonding unit 51 is SnIn 50 The melting point range is 110-130 ℃, the material of the second bonding unit 52 is SnIn, and the melting point range is 200-220 ℃.
Optionally, fig. 3 is a schematic top view of a bonding unit according to an embodiment of the present invention, as shown in fig. 3, a hybrid structure 501 at least partially fused with the first bonding unit 51 and the second bonding unit 52 exists, where the hybrid structure 501 includes all elements of the first bonding unit 51 and the second bonding unit 52.
It will be appreciated that the specific shape of the hybrid structure 501 will vary depending on the actual size and shape of the first and second bonding units 51, 52, and that fig. 3 is merely exemplary and not limiting.
Specifically, the first bonding unit 51 and the second bonding unit 52 are melted under the influence of high temperature in the bonding process, so that the contact places of the first bonding unit 51 and the second bonding unit 52 are mutually fused, and a hybrid structure 501 is formed, and the hybrid structure 501 comprises all elements of the first bonding unit 51 and the second bonding unit 52, namely an alloy structure formed by the first bonding unit 51 and the second bonding unit 52, so that the first bonding unit 51 and the second bonding unit 52 form a stable integral structure, the bonding firmness of the bonding unit 50 is further improved, the bonding yield is improved, and the normal operation of the light-emitting panel is ensured.
It should be noted that, since the melting point of the first bonding unit 51 is smaller than that of the second bonding unit 52, the first bonding unit 51 may be melted earlier than the second bonding unit in the process of bonding at high temperature, so that the hybrid structure 501 may be formed by partially fusing part of the first bonding unit 5151 and part of the second bonding unit 52 (as shown in fig. 3), or the hybrid structure 501 may be formed by fusing all of the first bonding unit 51 and part of the second bonding unit 52 (as shown in fig. 4), or the hybrid structure 501 may be formed by fusing all of the first bonding unit 51 and all of the second bonding unit 52 (as shown in fig. 5), which is not particularly limited herein.
Alternatively, with continued reference to fig. 1 and 2, the area of the first bonding unit 51 is smaller than the area of the second bonding unit 52.
Specifically, since the melting point of the first bonding unit 51 is lower than that of the second bonding unit 52, when the light emitting element 20 is detected and repaired, only the first bonding unit 51 can be bonded, at this time, the area of the first bonding unit 51 is smaller than that of the second bonding unit 52, so that the bonding of the first bonding unit 51 with a large area is avoided, the removal and repair treatment of the light emitting element 20 is facilitated, the repair efficiency is improved, the damage to the first pad unit 30 or the second pad unit 40 is avoided, and the repair rate is improved.
Further, the area of the second bonding unit 52 is larger than that of the first bonding unit 51, because the melting point of the second bonding unit 52 is higher, the bonding of the second bonding unit 52 with a large area can be performed in the process of adopting high-temperature bonding, so that the reliability and the firmness of the connection between the first pad unit 30 and the second pad unit 40 are ensured, and the reliability of the whole light-emitting panel is improved.
Further alternatively, the ratio of the area of the first bonding unit 51 to the area of the second bonding unit 52 is less than 0.2.
Specifically, the area of the first bonding unit 51 is too large compared to the area of the second bonding unit 52, which is difficult when the first bonding unit 51 melts to remove the light emitting element 20, and the bonding reliability and flexibility of the bonding unit can be improved by setting the ratio of the area of the first bonding unit 51 to the area of the second bonding unit 52 to be less than 0.2. In addition, if the bonding pad unit bonded to the first bonding unit 51 is damaged during the repeated bonding process of the first bonding unit 51, the integrity of the other bonding pad unit bonded to the second bonding unit 52 can be ensured, so that the light emitting element 20 and the driving substrate 10 can be reliably connected, and the normal operation of the light emitting panel can be ensured.
Alternatively, the melting point T1 of the first bonding unit 51 and the melting point T2 of the second bonding unit 52 satisfy: T2-T1 > 50 ℃.
Specifically, in the process of bonding only the first bonding unit 51, the temperature of laser irradiation is generally greater than the melting point T1 of the first bonding unit 51 and less than the melting point T2 of the second bonding unit 52, and if the difference between the melting point T1 of the first bonding unit and the melting point T2 of the second bonding unit 52 is small, the second bonding unit 52 may be bonded, so that T2-T1 > 50 ℃ may be set, thereby further improving the bonding reliability and flexibility of the bonding units.
Optionally, fig. 6 is a schematic top view of another bonding unit according to an embodiment of the present invention, and as shown in fig. 6, a second bonding unit 52 is disposed around the first bonding unit 51.
Specifically, when the first bonding unit 51 and the second bonding unit 52 are bonded at a high temperature, the melting point of the first bonding unit 51 is lower than that of the second bonding unit 52, so that the first bonding unit 51 melts earlier and is more thoroughly than that of the second bonding unit 52, the area of the melted first bonding unit 51 covering the pad unit is larger, the second bonding unit 52 is arranged around the first bonding unit 51, the first bonding unit 51 can be limited to flow to other areas, the phenomenon that the normal operation of the light-emitting panel is affected due to short circuit between the adjacent metal film layer or the adjacent light-emitting element is avoided, the bonding yield of the bonding unit 50 is improved, and meanwhile, the reliability of the light-emitting panel is improved.
Alternatively, fig. 7 is a schematic diagram of a partial top view structure of a light emitting panel according to an embodiment of the present invention, as shown in fig. 7, among a plurality of bonding units 50 arranged along a first direction X, a first bonding unit 51 and a second bonding unit 52 are disposed at intervals, and the first direction X is parallel to a plane where the driving substrate 10 is located.
Specifically, because the distance between the adjacent bonding units 50 is smaller, the first bonding units 51 and the second bonding units 52 can be arranged at intervals, that is, the second bonding units 52 are arranged between the adjacent first bonding units 51, so that in the high-temperature bonding process, the situation that the distance between the adjacent first bonding units 51 is too close to cause that the spreading area is large after melting and the adjacent first bonding units are connected with the adjacent bonding units 50 to cause short circuit can be avoided, the bonding yield is improved, and the normal operation of the light-emitting panel is ensured.
Optionally, fig. 8 is a schematic diagram of a partial top view structure of another light emitting panel according to an embodiment of the present invention, as shown in fig. 8, in a plurality of light emitting elements 20 arranged along a first direction X, a maximum distance d1 between two bonding units 50 electrically connected to the same light emitting element 20 is smaller than a minimum distance d2 between bonding units 50 of two adjacent light emitting elements 20; of the two bonding units 50 electrically connected to the same light emitting element 20, the first bonding unit 51 of one bonding unit 50 is located at a side of the second bonding unit 52 away from the other bonding unit 50; the first direction X is parallel to the plane in which the drive substrate 10 lies.
Specifically, as the density of the light emitting elements 20 of the light emitting panel increases, the body size of the light emitting elements 20 is also smaller and smaller, for example, the light emitting elements 20 adopt Micro LEDs or Mini LEDs, and meanwhile, in order to ensure independent light emission between the light emitting elements 20, the maximum distance d1 between two bonding units 50 electrically connected with the same light emitting element 20 is generally smaller than the minimum distance d2 between the bonding units 50 of two adjacent light emitting elements 20, that is, d1 < d2, so that the two bonding units 50 electrically connected with the same light emitting element 20 are arranged, the first bonding unit 51 of one bonding unit 50 is located at one side of the second bonding unit 52 far from the other bonding unit 50, and in the high-temperature bonding process, the situation that the first bonding unit 51 is too close to cause that the spreading area is very large after melting and is connected with the adjacent bonding units 50 to cause short circuit can be avoided, so that the bonding yield is improved, and the normal operation of the light emitting panel is ensured.
Based on the same inventive concept, the embodiment of the present invention further provides a method for manufacturing a light emitting panel, and fig. 9 is a flowchart of the method for manufacturing a light emitting panel according to the embodiment of the present invention, and referring to fig. 1, fig. 2, and fig. 9, the method for manufacturing a light emitting panel includes:
S101, providing a driving substrate, wherein one side of the driving substrate is provided with a plurality of first pad units.
S102, providing a plurality of light-emitting elements, wherein one side of each light-emitting element is provided with a second pad unit.
S103, setting a bonding unit on at least one bonding pad unit of the first bonding pad unit and the second bonding pad unit, wherein the bonding unit comprises a first bonding unit and a second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit.
In this embodiment, by disposing the bonding unit on at least one of the first bonding pad unit and the second bonding pad unit, where the bonding unit includes a first bonding unit and a second bonding unit, the melting point of the first bonding unit is smaller than that of the second bonding unit, so that the first bonding pad unit and the second bonding pad unit are only electrically connected through the first bonding unit, or the first bonding pad unit and the second bonding pad unit are simultaneously electrically connected through the first bonding unit and the second bonding unit, so as to improve bonding reliability and flexibility of the bonding unit, so that the bonding unit can be repeatedly bonded for many times, and the bonding unit or the bonding pad unit cannot be secondarily bonded due to one-time failure or damage, thereby simplifying the repairing process and being beneficial to improving the repairing rate of the light emitting element.
Optionally, fig. 10 is a flowchart of another method for manufacturing a light-emitting panel according to an embodiment of the present invention, as shown in fig. 10, where, on the basis of fig. 9, the method for manufacturing a light-emitting panel further includes: in a first bonding stage, after a plurality of first bonding pad units of a driving substrate are attached to second bonding pad units of a plurality of light-emitting elements, a laser source is adopted to irradiate the light-emitting panel with laser at a first irradiation temperature, so that the first bonding pad units and the second bonding pad units are electrically connected through the first bonding unit; in the second bonding stage, a laser source is adopted to irradiate the light-emitting panel at a second irradiation temperature, so that the first bonding pad unit and the second bonding pad unit are electrically connected through the first bonding unit and the second bonding unit; wherein, the melting point T1 of the first bonding unit, the melting point T2 of the second bonding unit, and the first irradiation temperature T1 and the second irradiation temperature T2 satisfy: t1 is more than T1 and less than T2 and less than T2.
Thus, the preparation method comprises:
s201, providing a driving substrate, wherein one side of the driving substrate is provided with a plurality of first pad units.
S202, providing a plurality of light-emitting elements, wherein one side of each light-emitting element is provided with a second pad unit.
S203, setting a bonding unit on at least one bonding pad unit of the first bonding pad unit and the second bonding pad unit, wherein the bonding unit comprises a first bonding unit and a second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit.
S204, in the first bonding stage, after the first bonding pad units of the driving substrate are bonded with the second bonding pad units of the light emitting elements, the light emitting panel is irradiated with laser light at a first irradiation temperature by using a laser source, so that the first bonding pad units and the second bonding pad units are electrically connected through the first bonding unit.
S205, in a second bonding stage, the light-emitting panel is irradiated by laser at a second irradiation temperature by using a laser source, so that the first bonding pad unit and the second bonding pad unit are electrically connected through the first bonding unit and the second bonding unit.
Wherein, the melting point T1 of the first bonding unit, the melting point T2 of the second bonding unit, and the first irradiation temperature T1 and the second irradiation temperature T2 satisfy: it will be appreciated that, according to the specific values of the melting point T1 of the first bonding unit and the melting point T2 of the second bonding unit, the first irradiation temperature T1 and the second irradiation temperature T2 may be different, and may be set according to actual requirements, which is not limited herein.
Referring to fig. 1, 2 and 10 in combination, the first bonding stage may refer to a pre-bonding process of the light emitting element 20 and the driving substrate 10, in which the first bonding unit 30 and the second bonding unit 40 are electrically connected only through the first bonding unit 51, so that the light emitting element 20 is conveniently detected and repaired, that is, when an abnormality of the light emitting element 20 is detected, the first bonding unit 51 of the abnormal light emitting element 20 may be irradiated only with a laser pulse of lower energy, that is, the laser irradiation temperature reaches the first irradiation temperature T1, and T1 < T2, so that the first bonding unit 51 may be melted, thereby peeling the abnormal light emitting element 20. Since the melting point T2 of the second bonding unit 52 is greater than the melting point T1 of the first bonding unit 51, T2 < T2 does not melt the second bonding unit 52 during peeling of the abnormal light emitting element 20, i.e., the second bonding unit 52 is not affected by any influence.
Further, if the light emitting element 20 can work normally, or after repairing all abnormal light emitting elements 20, the second bonding stage may be performed, that is, the final pre-bonding process between the light emitting element 20 and the driving substrate 10 may be performed directly, where the irradiation temperature of the laser pulse may be higher than the melting point of the second bonding unit 52, that is, the laser irradiation temperature reaches the second irradiation temperature T2, and T2 > T2, so that the first bonding unit 51 and the second bonding unit 52 can bond, that is, the first pad unit 30 and the second pad unit 40 are electrically connected through the first bonding unit 51 and the second bonding unit 52 at the same time, thereby improving the reliability and stability of bonding.
In this way, in the different bonding stages of the bonding process of the light emitting element 20 and the driving substrate 10, the bonding of the different bonding units 50 can be performed, so that the bonding reliability and flexibility of the bonding units can be improved, the bonding units can be repeatedly bonded for many times, the bonding units cannot be failed or damaged at one time, the repair rate of the light emitting element can be improved, and the normal operation of the light emitting panel can be ensured.
Optionally, fig. 11 is a flowchart of a method for manufacturing a light-emitting panel according to an embodiment of the present invention, as shown in fig. 11, after the first bonding stage and before the second bonding stage, including: detecting each light emitting element to determine whether the light emitting element is abnormal; determining the to-be-repaired position of the abnormal light-emitting element and removing the abnormal light-emitting element; transporting the normal light emitting element to the site to be repaired. Thus, the preparation method comprises:
S301, providing a driving substrate, wherein one side of the driving substrate is provided with a plurality of first pad units.
S302, providing a plurality of light-emitting elements, wherein one side of each light-emitting element is provided with a second pad unit.
S303, setting a bonding unit on at least one bonding pad unit of the first bonding pad unit and the second bonding pad unit, wherein the bonding unit comprises a first bonding unit and a second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit.
S304, in a first bonding stage, after the first bonding pad units of the driving substrate are bonded with the second bonding pad units of the light emitting elements, the light emitting panel is irradiated with laser light at a first irradiation temperature by using a laser source, so that the first bonding pad units and the second bonding pad units are electrically connected through the first bonding unit.
S305, each light emitting element is detected to determine whether the light emitting element is abnormal.
It can be appreciated that in order to avoid the occurrence of the problem of the poor condition in the production process of the light-emitting panel, it is generally required to detect and repair all the light-emitting elements on the light-emitting panel, wherein the light-emitting panel abnormality includes bright point, super bright point, dark point, bright line, dark line, etc., which are all caused by the light-emitting element abnormality.
Specifically, the method for detecting each light emitting element may be an existing conventional method, which is not particularly limited in the embodiment of the present invention, and may be set according to actual requirements. For example, a micro-pulse laser beam is used to scan the light-emitting element array, lighting of the light-emitting element array is achieved, then photoluminescence intensity of a single light-emitting element is measured through a Photoluminescence (PL) tester, a photoluminescence intensity peak value of each light-emitting element is obtained, the photoluminescence intensity peak value is used as an accurate value of each light-emitting element, whether the single light-emitting element has abnormal brightness is judged by comparing the difference between the accurate value of the single light-emitting element and the average value of the accurate values of preset surrounding light-emitting elements, and if the difference between the accurate value of one light-emitting element and the average value of the accurate values of the surrounding light-emitting elements reaches a preset threshold value, the light-emitting intensity of the light-emitting element is considered to be possibly abnormal.
S306, determining the to-be-repaired reset position of the abnormal light-emitting element, and removing the abnormal light-emitting element.
Specifically, when an abnormality is detected in the light emitting element, the position to be repaired of the abnormal light emitting element is determined, and then the bonding unit of the abnormal light emitting element is irradiated with laser pulses to melt the bonding unit, so that the abnormal light emitting element is removed.
Optionally, the removing abnormal light emitting element includes: the abnormal light-emitting element is removed by adopting a laser burning mode, wherein the irradiation temperature of laser is a third irradiation temperature t3, and the following conditions are satisfied: t1 is less than T3 and less than T2.
Specifically, according to the difference between the melting point T1 of the first bonding unit and the melting point T2 of the second bonding unit, the specific value of the third irradiation temperature T3 may also be different, and may be set according to actual requirements. By setting T1 to T3 to T2, the melting of the second bonding unit in the process of removing abnormal light-emitting elements by laser burning can be avoided, the integrity of the second bonding unit is ensured, the bonding unit can perform secondary bonding, and the repairing rate of the light-emitting elements is improved.
S307, transferring the normal luminous element to the position to be repaired.
Specifically, when the light emitting element is transported to the repair site in a normal manner, the specific transportation method may be an existing transportation method, which is not particularly limited in the embodiment of the present invention.
And S308, in the second bonding stage, the light-emitting panel is irradiated by laser at a second irradiation temperature by adopting a laser source, so that the first bonding pad unit and the second bonding pad unit are electrically connected through the first bonding unit and the second bonding unit.
In this embodiment, a laser source is used to perform laser irradiation on the light-emitting panel at a first irradiation temperature in a first bonding stage, so that the first bonding pad unit and the second bonding pad unit are electrically connected through the first bonding unit, then each light-emitting element is detected to determine whether the light-emitting element is abnormal, and after determining the position to be repaired of the abnormal light-emitting element, the abnormal light-emitting element is removed.
Optionally, on the basis of any one of the foregoing embodiments, a bonding unit is disposed on at least one pad unit of the first pad unit and the second pad unit, including: a first bonding unit and a second bonding unit are arranged on at least one bonding pad unit in the first bonding pad unit and the second bonding pad unit along a first direction, and the first direction is parallel to a plane where the driving substrate is located; in the same bonding unit along the thickness direction of the light-emitting panel, the height of the first bonding unit is greater than or equal to that of the second bonding unit.
The bonding unit may be located at one side of the first pad unit, or may be located at one side of the second pad unit, or the first pad unit and the second pad unit are both provided with partial bonding units, which are not specifically limited herein, and may be set according to actual requirements.
In an alternative embodiment, fig. 12 is a schematic cross-sectional structure of a driving substrate according to an embodiment of the present invention, as shown in fig. 12, a first bonding unit 51 and a second bonding unit 52 may be disposed on a first pad unit 30 along a first direction X, and in another alternative embodiment, fig. 13 is a schematic cross-sectional structure of a light emitting device according to an embodiment of the present invention, as shown in fig. 13, a first bonding unit 51 and a second bonding unit 52 may be disposed on a second pad unit 40 along the first direction X.
With continued reference to fig. 12 and 13, in the thickness direction Z of the light emitting panel, in the same bonding unit 50, specific values of the heights h1 of the first bonding unit 51 set to be greater than or equal to the heights h2 of the second bonding unit 52, h1 and h2 may be set according to actual requirements, so that when only the first bonding unit 51 is bonded, it is ensured that the first bonding unit 51 is reliably contacted with the first pad unit 30 and the second pad unit 40 and is electrically and firmly connected, so that the light emitting element 20 can receive a driving signal to emit light, and accuracy of detection of the light emitting element 20 is improved.
Note that, in the following embodiments, the bonding unit 50 may be located on one side of the first pad unit 30, for example, unless otherwise specified.
Alternatively, with continued reference to fig. 12 and 13, there are two bonding units 50 in which the first bonding unit 51 has the same height; the second bonding unit 52 of the two bonding units 50 has the same height.
Specifically, the heights of the first bonding units 51 in the two bonding units 50 electrically connected to the same light-emitting element 20 may be the same, so that when the light-emitting element 20 is electrically connected through the first bonding units 51, the two electrodes of the light-emitting element can be stably bonded to the first bonding units 51 in the two bonding units 50, so that the normal operation of the light-emitting element 20 is ensured while the bonding yield is extremely high, and the accuracy of precisely measuring the light-emitting element 20 is further improved. In the same way, the heights of the second bonding units 52 in the two bonding units 50 electrically connected with the same light-emitting element 20 can be the same, at this time, the heights of the first bonding units 51 in the two bonding units 50 can be the same or different, and it can be understood that when high-temperature bonding is performed, the first bonding units 51 can be completely melted, and the bonding of the second bonding units 52 cannot be affected, so that the heights of the second bonding units 52 are the same, both electrodes of the light-emitting element 20 can be stably bonded with the second bonding units 52 in the two bonding units 50, the normal operation of the light-emitting element 20 is ensured while the bonding yield is extremely high, and the accuracy of precisely measuring the light-emitting element 20 is further improved.
Further, the heights of the first bonding units 51 of all the bonding units 50 in the light-emitting panel and the heights of the second bonding units 52 of all the bonding units 50 are the same, so that the bonding yield is improved, and the light-emitting effect of the light-emitting panel is improved while the plurality of light-emitting elements 20 of the light-emitting panel are ensured to be more flat after being electrically connected with the driving substrate 10.
Optionally, a bonding unit is disposed on at least one of the first pad unit and the second pad unit, including: a first bonding unit and a second bonding unit are arranged on at least one bonding pad unit in the first bonding pad unit and the second bonding pad unit along a first direction, and the first direction is parallel to a plane where the driving substrate is located; and carrying out roughening treatment on the first bonding unit to enable the surface of the first bonding unit to be a rough surface, wherein the rough surface at least comprises a first position and a second position, and the heights of the first position and the second position are different along the thickness direction of the light-emitting panel.
As shown in fig. 14, the contact area between the first bonding unit 51 and the second bonding unit 40 on one side of the light emitting element is further reduced under the condition of ensuring the bonding stability of the first bonding unit 51, so that the bonding unit 50 can be repeatedly bonded for multiple times without causing a disposable failure or damage and unable to be bonded for a second time, and the repair rate of the light emitting element is facilitated.
In addition, the embodiment of the present invention further provides a light emitting device, and fig. 15 is a schematic structural diagram of the light emitting device according to the embodiment of the present invention, and as shown in fig. 15, the light emitting device 2 includes the light emitting panel 100 according to any embodiment of the present invention, and the light emitting device 2 according to the embodiment of the present invention may be a mobile phone or any electronic product with a display function, including but not limited to the following categories: television, notebook computer, desktop display, tablet computer, digital camera, smart bracelet, smart glasses, vehicle-mounted display, medical equipment, industrial control equipment, touch interactive terminal, etc., which are not particularly limited in this embodiment of the invention.
The embodiment of the invention further provides a backlight module, and fig. 16 is a schematic structural diagram of the backlight module provided by the embodiment of the invention, as shown in fig. 16, the backlight module 3 includes the light-emitting panel 100 according to any embodiment of the invention, and further includes an optical structure 200 located at a light emitting side of the light-emitting panel 100, where the optical structure 200 may include, for example, optical films such as a diffusion sheet, a brightness enhancement film, and a light homogenizing film that are stacked, so as to facilitate improving a light emitting effect of the backlight module 3. The specific structure of the optical structure 200 is not limited in the embodiment of the present invention. The backlight module 3 provided in the embodiment of the present invention has the technical effects of the technical solution in any of the above embodiments, and the explanation of the same or corresponding structure and terms as those of the above embodiments is not repeated herein.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.

Claims (21)

1. A light-emitting panel, characterized in that the light-emitting panel comprises a driving substrate and a plurality of light-emitting elements;
a plurality of first pad units are arranged on one side of the driving substrate, which is close to the light-emitting element;
a second bonding pad unit is arranged on one side, close to the driving substrate, of the light-emitting element;
and at least one bonding pad unit of the first bonding pad unit and the second bonding pad unit is provided with a bonding unit, the bonding unit comprises a first bonding unit and a second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit.
2. The light-emitting panel according to claim 1, wherein a bonding process of the light-emitting element and the driving substrate includes at least a first bonding stage in which the first pad unit and the second pad unit are electrically connected through the first bonding unit and a second bonding stage in which the first pad unit and the second pad unit are electrically connected through the first bonding unit and the second bonding unit.
3. The light-emitting panel according to claim 1, wherein an area of the first bonding unit is smaller than an area of the second bonding unit.
4. A light emitting panel according to claim 3, wherein the ratio of the area of the first bonding unit to the area of the second bonding unit is less than 0.2.
5. The light-emitting panel according to claim 1, wherein a melting point T1 of the first bonding unit and a melting point T2 of the second bonding unit satisfy: T2-T1 > 50 ℃.
6. The light-emitting panel according to claim 1, wherein the first bonding unit and the second bonding unit are arranged along a first direction, the first direction being parallel to a plane in which the driving substrate is located.
7. The light emitting panel of claim 1, wherein the second bonding unit is disposed around the first bonding unit.
8. The light-emitting panel according to claim 1, wherein the first bonding unit and the second bonding unit are disposed at intervals among the plurality of bonding units arranged along a first direction, the first direction being parallel to a plane in which the driving substrate is located.
9. The light-emitting panel according to claim 1, wherein a maximum distance between two bonding units electrically connected to the same light-emitting element among the plurality of light-emitting elements arranged in the first direction is smaller than a minimum distance between bonding units of adjacent two light-emitting elements;
the first bonding unit of one bonding unit is positioned at one side of the second bonding unit away from the other bonding unit;
the first direction is parallel to the plane where the driving substrate is located.
10. The light-emitting panel according to claim 1, wherein the first bonding unit comprises SnBi x1 In y1 Alloy, biIn y1 Alloy, snBi x1 Alloy or SnIn y1 At least one of the alloys;
the second bonding unit comprises Sn, snAg x2 Cu y2 Alloy, snAg x2 Alloy, snCu y2 Alloy or SnSn z1 At least one of the alloys.
11. The light-emitting panel according to claim 1, wherein the first bonding unit and the second bonding unit include the same metal element.
12. The light-emitting panel according to claim 11, wherein the first bonding unit and the second bonding unit have at least a partially intermixed hybrid structure, the hybrid structure including all elements of the first bonding unit and the second bonding unit.
13. A method of manufacturing a light emitting panel, comprising:
providing a driving substrate, wherein one side of the driving substrate is provided with a plurality of first bonding pad units;
providing a plurality of light emitting elements, wherein one side of each light emitting element is provided with a second pad unit;
and a bonding unit is arranged on at least one bonding pad unit of the first bonding pad unit and the second bonding pad unit, the bonding unit comprises a first bonding unit and a second bonding unit, and the melting point of the first bonding unit is smaller than that of the second bonding unit.
14. The method of manufacturing a light-emitting panel according to claim 13, further comprising:
in a first bonding stage, after the first pad units of the driving substrate are bonded with the second pad units of the light-emitting elements, a laser source is adopted to irradiate the light-emitting panel with laser at a first irradiation temperature, so that the first pad units and the second pad units are electrically connected through the first bonding unit;
in a second bonding stage, the laser source is adopted to irradiate the light-emitting panel at a second irradiation temperature, so that the first bonding pad unit and the second bonding pad unit are electrically connected through the first bonding unit and the second bonding unit;
wherein the melting point T1 of the first bonding unit, the melting point T2 of the second bonding unit, and the first irradiation temperature T1 and the second irradiation temperature T2 satisfy: t1 is more than T1 and less than T2 and less than T2.
15. The method of manufacturing a light-emitting panel according to claim 14, comprising, after the first bonding stage and before the second bonding stage:
detecting each light-emitting element to determine whether the light-emitting element is abnormal;
Determining the position to be repaired of the abnormal light-emitting element, and removing the abnormal light-emitting element;
and transferring the normal luminous element to the to-be-repaired reset device.
16. The method of manufacturing a light-emitting panel according to claim 15, wherein the light-emitting element from which abnormality is removed comprises:
the abnormal light-emitting element is removed by adopting a laser burning mode, wherein the irradiation temperature of the laser is a third irradiation temperature t3, and the following conditions are satisfied: t1 is less than T3 and less than T2.
17. The method of manufacturing a light-emitting panel according to claim 13, wherein providing a bonding unit on at least one of the first pad unit and the second pad unit comprises:
the first bonding unit and the second bonding unit are arranged on at least one bonding pad unit in the first bonding pad unit and the second bonding pad unit along a first direction, and the first direction is parallel to a plane where the driving substrate is located; and in the same bonding unit along the thickness direction of the light-emitting panel, the height of the first bonding unit is greater than or equal to that of the second bonding unit.
18. The method of manufacturing a light-emitting panel according to claim 13, wherein the first bonding unit of two bonding units has the same height;
The second bonding unit has the same height in the two bonding units.
19. The method of manufacturing a light-emitting panel according to claim 13, wherein providing a bonding unit on at least one of the first pad unit and the second pad unit comprises:
the first bonding unit and the second bonding unit are arranged on at least one bonding pad unit in the first bonding pad unit and the second bonding pad unit along a first direction, and the first direction is parallel to a plane where the driving substrate is located;
and carrying out roughening treatment on the first bonding unit to enable the surface of the first bonding unit to be a rough surface, wherein the rough surface at least comprises a first position and a second position, and the heights of the first position and the second position are different along the thickness direction of the light-emitting panel.
20. A light-emitting device comprising the light-emitting panel according to any one of claims 1 to 12.
21. A backlight module comprising the light-emitting panel according to any one of claims 1-12.
CN202310802349.6A 2023-06-30 2023-06-30 Light-emitting panel, preparation method thereof, light-emitting device and backlight module Pending CN116741795A (en)

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CN202310802349.6A CN116741795A (en) 2023-06-30 2023-06-30 Light-emitting panel, preparation method thereof, light-emitting device and backlight module

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