CN116730334A - Method for converting vertical graphene into diamond - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 65
- 239000010432 diamond Substances 0.000 title claims abstract description 65
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 37
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 23
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 16
- 239000011733 molybdenum Substances 0.000 claims abstract description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 29
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 244000137852 Petrea volubilis Species 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000002360 preparation method Methods 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 9
- 239000010439 graphite Substances 0.000 description 9
- 238000012512 characterization method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 4
- 238000006664 bond formation reaction Methods 0.000 description 4
- 238000000024 high-resolution transmission electron micrograph Methods 0.000 description 4
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
The invention discloses a method for converting vertical graphene into diamond, which adopts a direct current glow discharge plasma chemical vapor deposition method with molybdenum as an electrode to prepare vertical graphene sheets, and then carries out annealing treatment in a tube furnace to convert graphene into diamond. The method for converting the vertical graphene into the diamond has very important scientific significance and engineering value for developing a novel diamond preparation method.
Description
Technical Field
The invention relates to a method for converting upright graphene into diamond.
Background
In the diamond structure, each carbon atom is at sp 3 The hybridized orbit forms a covalent bond with another 4 carbon atoms, and the special crystal structure ensures that the diamond has excellent properties of high hardness, high thermal conductivity, high electron mobility, wide forbidden band and the like, and is widely applied in a plurality of fields. But diamond resources in nature are limited and expensive. In contrast, synthetic diamond has almost the same excellent properties as natural diamond, and also has far lower manufacturing costs. It is well known that high temperature High Pressure (HPHT) and Chemical Vapor Deposition (CVD) methods are currently the common means for producing high purity, bulk single crystal diamond. The experimental conditions for synthesizing high-quality bulk single crystal diamond by HPHT method are very harsh, the pressure required by phase transition is as high as several gigapascals or even higher, the temperature is as high as several thousand degrees centigrade, and the preparation cost is high. The main preparation methods of CVD diamond include Hot Filament Chemical Vapor Deposition (HFCVD), microwave Plasma Chemical Vapor Deposition (MPCVD), combustion Flame Chemical Vapor Deposition (CFCVD), etc., and generally gaseous carbon source is used as the diamond growth raw material. In addition to using gaseous carbon sources, there have been researchers using graphite plates as solid carbon sources and substrates, introducing hydrogen gas in MPCVD or HFCVD systems, and producing diamond on graphite, silicon substrates, or multi-walled carbon nanotubes. The experimental principles of the CVD method described above all require the generation of gaseous CH in a gaseous atmosphere X Diamond is prepared as a precursor for diamond growth. The conversion of solid carbon sources into gaseous carbon-containing active groups requires high input energy density, high equipment requirements and high energy consumption. Therefore, the development of a method for preparing diamond at normal or low pressure and at a low temperature is of great importance to the diamond manufacturing industry.
The transition metal crystal can promote sp due to its graphitization promoting effect 3 Conversion of carbon to sp 2 Carbon, while considered detrimental to diamond growth, is used to prepare graphene. However, the inventors have found in previous studies that monodisperse tantalum precursor is supportedThe graphene of the son is converted into diamond under high-temperature annealing, and the phase change process is closely related to the arrangement state of the outer valence electron orbitals of the tantalum atoms and the atomic radius. Meanwhile, theoretical calculation researches of the inventor show that the influence of different transition metal dispersed monoatoms on the phase change barrier of graphene to diamond is quite different. Some transition metals such as Ag, pt, au, etc. have little effect on the phase change barrier, i.e. after graphite is loaded with such metals, the transition to diamond is still difficult to occur. And the metal molybdenum is a metal which is screened in the calculation result by the inventor and has larger influence on the graphene/diamond phase change barrier. However, no study on whether monodisperse metal molybdenum atoms can change graphite phase into diamond has been carried out experimentally, so that studying the influence of molybdenum on graphite/diamond phase change is of great significance for developing a method for preparing diamond based on graphite.
Disclosure of Invention
The invention aims to provide a method for converting upright graphene into diamond.
The technical scheme adopted by the invention is as follows:
the invention provides a method for converting upright graphene into diamond, which comprises the following steps:
(1) In direct current glow discharge plasma chemical vapor deposition equipment, performing direct current glow discharge plasma chemical vapor deposition by taking a pretreated monocrystalline silicon wafer as a substrate, molybdenum as an electrode and methane and hydrogen as reaction gases to obtain an upright graphene film with monodisperse molybdenum atoms;
the conditions of the direct current glow discharge plasma chemical vapor deposition are as follows: the inflow flow rate of methane is 40+/-3 sccm (preferably 40 sccm), the inflow flow rate of hydrogen is 500+/-3 sccm (preferably 500 sccm), the pressure of a reaction chamber is 57+/-2 Torr (preferably 57+/-0.1 Torr), the power is 3.1-3.7kW (preferably 3.3+/-0.1 kW), the temperature of the substrate is 930-970 ℃ (preferably 950 ℃), and the deposition time is 55-65min (preferably 60 min);
(2) And (3) placing the vertical graphene film with the monodisperse molybdenum atoms prepared in the step (1) into a tube furnace, and annealing for 25-50min (preferably 30 min) under the vacuum degree of 4-6Pa (preferably 5 Pa) and 700-1100 ℃ (preferably 700 ℃), wherein the vertical graphene is converted into diamond.
Further, the pretreatment in the step (1) is as follows: cutting, polishing and cleaning the monocrystalline silicon piece. Specifically, in one embodiment of the present invention, the preprocessing is: and cutting the monocrystalline silicon piece into 1 multiplied by 1cm by a diamond knife, pressing and polishing the monocrystalline silicon piece on 1000-mesh sand paper back and forth for 3-5 minutes, cleaning the monocrystalline silicon piece by absolute ethyl alcohol, and drying the monocrystalline silicon piece to obtain the substrate for growing the vertical graphene.
Preferably, in the step (1), the conditions of the dc glow discharge plasma chemical vapor deposition are: the inflow flow rate of methane is 40sccm, the inflow flow rate of hydrogen is 500sccm, the pressure of the reaction chamber is 57+/-0.1 Torr, the power is 3.3+/-0.1 kW, the temperature of the substrate is 950 ℃, and the deposition time is 60min. The temperature of the monocrystalline silicon piece in the step (1) is regulated and controlled through power and air pressure.
(1) Preparing an upright graphene film with monodisperse molybdenum atoms on a monocrystalline silicon substrate by adopting a direct current glow discharge plasma chemical vapor deposition (DC-CVD) method with molybdenum as an electrode, wherein the thickness of the upright graphene film is about 3 mu m; (2) And (3) annealing the vertical graphene obtained in the step (1) by adopting a tube furnace vacuum annealing method. Annealing for 30 minutes in a tube furnace with the temperature of 700-1100 ℃ and the vacuum degree of 5Pa to obtain the diamond.
In the step (1), the vertical graphene is prepared on the monocrystalline silicon substrate by adopting a direct current glow discharge plasma chemical vapor deposition method with molybdenum as an electrode, and the preparation can be carried out by adopting conventional direct current glow discharge plasma chemical vapor deposition equipment, and the thickness of the prepared vertical graphene film is required to be about 3 mu m.
Further, the step (1) may be performed by the following steps: putting monocrystalline silicon substrate into direct current glow discharge plasma chemical vapor deposition equipment, wherein the anode electrode and the cathode electrode are both high-purity metal molybdenum plates, methane and hydrogen are used as reaction gases, and the gas ratio is CH 4 :H 2 =40 sccm:500sccm, reaction chamber pressure was 55-60Torr, and power was 3.2-3.5kW. The silicon wafer temperature is 950 ℃ and the deposition time is 1 hour, and the thickness is about 3 mu mA vertical graphene film containing monodisperse molybdenum atoms.
In the step (2), tubular furnace equipment is used, the annealing temperature is 700-1100 ℃, and the vacuum degree is 5Pa. The annealing time was 30 minutes. Obtaining diamond.
Compared with the prior art, the invention has the beneficial effects that: (1) Preparation of graphene and metal molybdenum atom loading are realized in direct current glow discharge plasma chemical vapor deposition (DC-CVD) equipment; (2) Compared with the phase change process of converting graphite into diamond in a high-temperature high-pressure method, the method can be realized at low pressure, and the phase change temperature is lower; the phase change can be realized by using a low-cost tubular furnace; (3) Has very important scientific significance and value for developing a novel diamond preparation method.
Drawings
FIG. 1 is an XPS spectrum of a 700℃annealed sample;
FIG. 2 is a HRTEM image of 700℃annealed samples;
FIG. 3 is an XPS spectrum of a 900℃annealed sample;
FIG. 4 is a HRTEM image of 900℃annealed samples;
FIG. 5 is an XPS spectrum of a 1100℃annealed sample;
FIG. 6 is a HRTEM image of 1100℃annealed samples;
FIG. 7 is an XPS spectrum of a sample prior to annealing;
FIG. 8 is a HRTEM image of a sample prior to annealing;
Detailed Description
The invention will be further described with reference to the following specific examples, but the scope of the invention is not limited thereto:
example 1:
and carrying out 700 ℃ annealing treatment on the prepared molybdenum-loaded vertical graphene film. Dividing a monocrystalline silicon wafer into a size of 1X 1cm by using a diamond cutter, and then pressing the monocrystalline silicon wafer to polish the monocrystalline silicon wafer back and forth on 1000-mesh sand paper for 4 minutes; washing the treated silicon wafer with absolute ethanol after polishing, drying the silicon wafer, and placing monocrystalline silicon substrate into molybdenum-based electrodeDirect current glow discharge plasma chemical vapor deposition equipment takes methane and hydrogen as reaction gases, and the gas proportion is CH 4 :H 2 500sccm, reaction chamber pressure of 57.+ -. 0.1Torr and power of 3.3.+ -. 0.1kW. The temperature of the silicon wafer is 950 ℃, the deposition time is 60min, and the vertical graphene film with the thickness of about 3 mu m is prepared.
And (3) annealing the grown vertical graphene, wherein the annealing is performed in a tubular furnace device. The annealing temperature was 700℃and the vacuum degree was 5Pa, and the annealing time was 30 minutes.
The sample after 700 ℃ annealing treatment was analyzed for carbon bond formation by XPS spectroscopy, as shown in fig. 1. It can be seen that five peaks are separated after the high-resolution C1s spectrum fitting, the binding energies are 284.8, 285.4, 286, 287.5 and 290.1eV, respectively, representing sp 2 -C、sp 3 -C, C-O, C =o bond and pi-pi electron transition peak. The five peaks have a ratio of 51.16%, 29.81%, 13.15%, 4.69% and 1.19%, respectively, sp 2 -C/sp 3 -C ratio of 1.72. Indicating that after 30 minutes of annealing at 700 ℃, more sp is present in the sample 3 -C。
The microstructure of the 700 ℃ annealed sample was analyzed by high resolution transmission electron microscopy, as shown in fig. 2. The characterization areas are shown as diamond (111) and (220) facets. Indicating that there are more diamond structures in the sample, proving sp in XPS characterization 3 -C is mainly diamond. The molybdenum-supported upright graphene was illustrated to be converted to diamond after annealing.
Example 2:
and carrying out 900 ℃ annealing treatment on the prepared molybdenum-loaded vertical graphene film. Dividing a monocrystalline silicon wafer into a size of 1X 1cm by using a diamond cutter, and then pressing the monocrystalline silicon wafer to polish the monocrystalline silicon wafer back and forth on 1000-mesh sand paper for 4 minutes; after polishing, the treated silicon wafer is washed by absolute ethyl alcohol, after the silicon wafer is dried, the monocrystalline silicon substrate is put into a direct current glow discharge plasma chemical vapor deposition device which takes molybdenum as an electrode, and methane and hydrogen are taken as reaction gases, and the gas proportion is CH 4 :H 2 =40 sccm:500sccm, reaction chamber pressure of 57±0.1Torr, powerIs 3.3+/-0.1 kW. The temperature of the silicon wafer is 950 ℃, the deposition time is 60min, and the vertical graphene film with the thickness of about 3 mu m is prepared.
And (3) annealing the grown vertical graphene, wherein the annealing is performed in a tubular furnace device. The annealing temperature was 900 ℃, the vacuum degree was 5Pa, and the annealing time was 30 minutes.
The sample after 900 ℃ annealing treatment was analyzed for carbon bond formation by XPS spectroscopy, as shown in fig. 3. It can be seen that four peaks are separated after the high-resolution C1s spectrum fitting, the binding energies are 284.8, 285.2, 286.3 and 287.3eV, respectively, representing sp 2 -C、sp 3 -C, C-O, C =o bond. The four peaks have a duty cycle of 53.98%, 17.66%, 10.63% and 17.63%, respectively, sp 2 -C/sp 3 -C ratio of 3.04. After annealing at 900℃for 30 minutes, the sample was shown to have more sp 3 -C。
The microstructure of the 900 ℃ annealed samples was analyzed by high resolution transmission electron microscopy, as shown in fig. 3, showing two different characterization areas. The relevant crystal plane information for diamond is shown in both areas. Indicating that there are more diamond structures in the sample, demonstrating more sp in XPS characterization 3 -C is mainly diamond. The molybdenum-supported upright graphene was illustrated to be converted to diamond after annealing.
Example 3:
and carrying out 1100 ℃ annealing treatment on the prepared molybdenum-loaded vertical graphene film. Dividing a monocrystalline silicon wafer into a size of 1X 1cm by using a diamond cutter, and then pressing the monocrystalline silicon wafer to polish the monocrystalline silicon wafer back and forth on 1000-mesh sand paper for 4 minutes; after polishing, the treated silicon wafer is washed by absolute ethyl alcohol, after the silicon wafer is dried, the monocrystalline silicon substrate is put into a direct current glow discharge plasma chemical vapor deposition device which takes molybdenum as an electrode, and methane and hydrogen are taken as reaction gases, and the gas proportion is CH 4 :H 2 500sccm, reaction chamber pressure of 57.+ -. 0.1Torr and power of 3.3.+ -. 0.1kW. The temperature of the silicon wafer is 950 ℃, the deposition time is 60min, and the vertical graphene film with the thickness of about 3 mu m is prepared.
And (3) annealing the grown vertical graphene, wherein the annealing is performed in a tubular furnace device. The annealing temperature was 1100 ℃, the vacuum degree was 5Pa, and the annealing time was 30 minutes.
The sample annealed at 1100 ℃ was analyzed for carbon bond formation using XPS spectroscopy, as shown in fig. 5. It can be seen that four peaks are separated after the high-resolution C1s spectrum is fitted, the binding energies are 284.8, 285.3, 286.3 and 288.0eV respectively, and sp is represented respectively 2 -C、sp 3 -C, C-O and c=o bonds. The four peaks have a duty cycle of 45.37%, 21.33%, 13.84% and 19.45%, respectively, sp 2 -C/sp 3 -C ratio of 2.13. Indicating that after 30 minutes of annealing at 1100 ℃, more sp is present in the sample 3 -C。
The microstructure of the 1100 ℃ annealed sample was analyzed by high resolution transmission electron microscopy, as shown in fig. 6. As can be seen from the enlarged view (b) in fig. 6, this region shows the diamond (111) crystal plane, (220) crystal plane and (200) crystal plane. Indicating that there are more diamond structures in the sample, proving sp in XPS characterization 3 -C is mainly diamond. The molybdenum-supported upright graphene was illustrated to be converted to diamond after annealing.
Example 4:
dividing a monocrystalline silicon wafer into a size of 1X 1cm by using a diamond cutter, and then pressing the monocrystalline silicon wafer to polish the monocrystalline silicon wafer back and forth on 1000-mesh sand paper for 4 minutes; after polishing, the treated silicon wafer is washed by absolute ethyl alcohol, after the silicon wafer is dried, the monocrystalline silicon substrate is put into a direct current glow discharge plasma chemical vapor deposition device which takes molybdenum as an electrode, and methane and hydrogen are taken as reaction gases, and the gas proportion is CH 4 :H 2 500sccm, reaction chamber pressure of 57.+ -. 0.1Torr and power of 3.3.+ -. 0.1kW. The temperature of the silicon wafer is 950 ℃, the deposition time is 60min, and the vertical graphene film with the thickness of about 3 mu m is prepared.
The sample before annealing was analyzed for carbon bond formation by XPS spectroscopy, as shown in FIG. 7. It can be seen that four peaks are separated after high-resolution C1s spectrum fitting, the binding energies are 284.8, 285.2, 286.2 and 288.2eV, respectively, representing sp 2 -C、sp 3 -C, C-O and c=o bonds.The four peaks have a duty cycle of 48.75%, 20.99%, 11.08% and 19.17%, respectively, sp 2 -C/sp 3 -C ratio of 2.32. Indicating that more sp is present in the sample before annealing 3 -C。
The microstructure of the sample before annealing treatment was analyzed by high resolution transmission electron microscopy, as shown in fig. 8. The long graphite band structure is crisscrossed, and the more divergent amorphous phase information can be seen in the Fourier transform diagram. Both regions 1 and 2 show graphite (002) crystal planes. The amorphous information is displayed in the area 3. Indicating the presence of more amorphous phase in the sample, proving sp in XPS characterization 3 -C is predominantly amorphous.
Claims (10)
1. A method for converting upright graphene into diamond, characterized in that the method comprises the following steps:
(1) In direct current glow discharge plasma chemical vapor deposition equipment, performing direct current glow discharge plasma chemical vapor deposition by taking a pretreated monocrystalline silicon wafer as a substrate, molybdenum as an electrode and methane and hydrogen as reaction gases to obtain an upright graphene film with monodisperse molybdenum atoms;
the conditions of the direct current glow discharge plasma chemical vapor deposition are as follows: the inflow flow of methane is 40+/-3 sccm, the inflow flow of hydrogen is 500+/-3 sccm, the pressure of a reaction chamber is 57+/-2 Torr, the power is 3.1-3.7kW, the temperature of the substrate is 930-970 ℃, and the deposition time is 55-65min;
(2) And (3) placing the vertical graphene film with the monodisperse molybdenum atoms prepared in the step (1) into a tube furnace, and annealing for 25-50min at the vacuum degree of 4-6Pa and the temperature of 700-1100 ℃ to convert the vertical graphene into diamond.
2. The method of converting upright graphene into diamond according to claim 1, wherein: the pretreatment in the step (1) is as follows: cutting, polishing and cleaning the monocrystalline silicon piece.
3. A method of converting upstanding graphene into diamond according to claim 2, characterised in that the pretreatment is: dividing the monocrystalline silicon piece into 1X 1cm by a diamond knife, pressing and polishing on 1000-mesh sand paper back and forth for 3-5 minutes, cleaning with absolute ethyl alcohol, and drying.
4. The method of converting upstanding graphene into diamond according to claim 1, wherein in step (1) the inflow rate of methane is 40sccm.
5. The method of converting upstanding graphene into diamond according to claim 1, wherein in step (1) the inflow rate of hydrogen is 500sccm.
6. The method of converting graphene into diamond according to claim 1, wherein in step (1), the reaction chamber pressure is 57±0.1Torr.
7. The method of converting upstanding graphene into diamond according to claim 1, wherein in step (1) the power is 3.3 ± 0.1kW.
8. The method of converting upright graphene into diamond according to claim 1, wherein: in the step (1), the temperature of the substrate is 950 ℃ and the deposition time is 60min.
9. The method of converting upright graphene into diamond according to claim 1, wherein: in the step (2), the temperature of the heat treatment is 700 ℃.
10. The method of converting upright graphene into diamond according to claim 1, wherein: in the step (2), the time of the heat treatment is 30min.
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