CN116723722A - Anode, light emitting device, display panel, and display apparatus - Google Patents
Anode, light emitting device, display panel, and display apparatus Download PDFInfo
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Abstract
The application provides an anode, a light-emitting device, a display panel and a display device. The application improves the problems of greatly reduced transparency and work function of the anode by arranging the first dielectric layer between the first sub-electrode and the second sub-electrode.
Description
Technical Field
The present application relates to the field of display, and in particular, to an anode, a light emitting device, a display panel, and a display apparatus including the display panel.
Background
An Organic Light-Emitting Diode (OLED) display technology has been widely focused on, which has advantages of self-luminescence, wide viewing angle, fast response speed, low power consumption, and the like. The organic light emitting diode in the top emission organic light emitting display panel generally uses Indium Tin Oxide (ITO) as an anode of the organic light emitting diode, mainly because indium tin oxide has high transparency and high work function, facilitates hole injection, and improves light emitting efficiency. Silver (Ag) has a high reflectivity, which is advantageous for light reflection, so that a stacked structure of indium tin oxide and silver is used as an anode of the organic light emitting diode to further improve the display brightness of the organic light emitting diode.
However, after the organic light emitting diode is used for a period of time, the transparency and work function of indium tin oxide are greatly reduced, resulting in a reduction in the light emitting efficiency of the organic light emitting diode. It is therefore desirable to provide a new display panel to improve the problems of the transparency and work function of indium tin oxide in the anode.
Disclosure of Invention
The first aspect of the present application provides an anode, which includes a first sub-electrode, a first dielectric layer and a second sub-electrode stacked in order, the first sub-electrode being a reflective electrode, the first dielectric layer including an insulating layer and a reducing material.
The first sub-electrode and the second sub-electrode are electrically isolated through the first dielectric layer, and the structure can improve the problem of electron migration between the first sub-electrode and the second sub-electrode, so that the problem of reduction of the luminous efficiency of the organic light emitting diode caused by reduction of the work function of the second electrode due to the electron migration is solved.
In a specific embodiment of the first aspect of the application, the reducing material comprises hydrogen ions, hydrogen atoms or amino groups.
The hydrogen ions, hydrogen atoms or amino groups have reducibility, can reduce silver oxide into silver simple substance, inhibit black silver oxide from generating, improve the reflectivity of the first sub-electrode, and also improve the problem that the display panel has display dark spots due to damage of individual light-emitting devices caused by short circuit between the anode of the light-emitting device and the cathode of the light-emitting device.
In a specific embodiment of the first aspect of the present application, the second sub-electrode is made of metal oxide, the first sub-electrode is made of metal, and the insulating layer is made of an inorganic layer.
For example, further, the material of the insulating layer includes silicon nitride.
In a specific embodiment of the first aspect of the present application, the anode further includes a second dielectric layer, the second dielectric layer is located between the first dielectric layer and the second sub-electrode, and the refractive index of the second dielectric layer is greater than the refractive index of the first dielectric layer.
The first medium layer and the second medium layer are combined to form the total reflection layer, so that the reflection of light with specific wavelength can be improved, and the brightness of the light-emitting device is improved.
In a specific embodiment of the first aspect of the present application, the different light emitting devices have light emitting layers of different colors to emit outgoing light of different wavelengths, the optical thickness of the second dielectric layer being arranged such that light reflected at the interface of the first dielectric layer and the second dielectric layer is constructive to present interference with light reflected at the surface of the second dielectric layer facing away from the first dielectric layer. For example, the optical thickness of the second dielectric layer is n×h= (k+1/4) λ, where N is the refractive index of the second dielectric layer, H is the thickness of the second dielectric layer, K is a natural number, λ is the wavelength of the incident light corresponding to the anode, and n×h is the optical thickness.
In a specific embodiment of the first aspect of the present application, the second dielectric layer is a conductive material.
For example, further, the second dielectric layer is graphene.
The graphene has excellent conductivity, can reduce potential barrier of hole injection, and improves injection and transmission capabilities of holes of the organic electroluminescent display device, so that luminous performance of the device is improved. Therefore, the second dielectric layer is graphene, so that the conductivity of the light-emitting device can be improved while the reflection is increased.
In a specific embodiment of the first aspect of the present application, the anode further comprises a third sub-electrode, which is located at a side of the first sub-electrode facing away from the first dielectric layer.
The third sub-electrode plays a role of a buffer layer, so that the problem of poor binding force between the array substrate and the first sub-electrode can be relieved.
A second aspect of the present application provides a light-emitting device comprising the anode as claimed in the first aspect, a light-emitting functional layer and a cathode stacked on one side of the anode.
A third aspect of the present application provides a display panel comprising an array substrate and a plurality of light emitting devices as in the second aspect disposed on the array substrate.
In a specific embodiment of the third aspect of the present application, the array substrate includes a driving circuit layer including a plurality of thin film transistors arranged at intervals; the display panel further includes a pixel defining layer including a plurality of pixel openings corresponding to the anode electrodes. The source electrode and the drain electrode of the thin film transistor are electrically connected with the second dielectric layer through a through hole, the orthographic projection of the through hole on the pixel limiting layer is beyond the pixel opening, and the through hole penetrates through the third sub-electrode, the second sub-electrode and the first dielectric layer.
In a specific embodiment of the third aspect of the present application, the array substrate further includes a driving circuit layer, and the driving circuit layer includes a plurality of thin film transistors disposed at intervals. The display panel further includes a pixel defining layer including a plurality of pixel openings corresponding to the anode electrodes. The source electrode and the drain electrode of the thin film transistor are electrically connected with the first sub-electrode through a through hole, orthographic projection of the through hole on the pixel limiting layer is positioned outside the pixel opening, and the through hole penetrates through the second sub-electrode and the first dielectric layer.
A fourth aspect of the application provides a display device comprising a display panel as referred to in the third aspect.
In the application, the first dielectric layer is arranged between the first sub-electrode and the second sub-electrode to improve the problems of greatly reduced transparency and work function of the anode.
Drawings
Fig. 1 is a schematic plan view of a display panel according to an embodiment of the application.
Fig. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the application.
Fig. 3 is a schematic cross-sectional view of an anode of a display panel according to an embodiment of the application.
Fig. 4 is a schematic cross-sectional view of an anode of a display panel according to an embodiment of the application.
Fig. 5 is a schematic cross-sectional view of an anode of a display panel according to an embodiment of the application.
Fig. 6 is a schematic cross-sectional view of a display panel according to an embodiment of the application.
Fig. 7 is a schematic partial view of a cross section of a display panel according to an embodiment of the application.
Fig. 8 is a schematic partial view of a cross section of a display device according to an embodiment of the application.
Fig. 9 is a schematic structural diagram of a display device according to an embodiment of the application.
Reference numerals:
100-a display panel; 101-a display area; 102-a border region; 110-an array substrate; 111-a substrate; 112-a driving circuit layer; a TFT-thin film transistor; 120-a light emitting device; 121-an anode; 1211-a first sub-electrode; 1212-a first dielectric layer; 1213-a second sub-electrode; 1214-a second dielectric layer; 1215-a third sub-electrode; 122-a light emitting functional layer; 123-cathode; 130-a pixel defining layer; 140-through holes;
200-a display device; 201-a housing; 202-cover plate.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
An organic light emitting diode belongs to a current type organic light emitting device, and comprises an anode, a cathode and an organic light emitting layer positioned between the anode and the cathode. Under the action of the electric field, holes generated by the anode and electrons generated by the cathode move and migrate to the light-emitting layer respectively, and when the holes and the electrons meet at the light-emitting layer, energy excitons are generated, so that light-emitting molecules are excited to finally generate visible light.
In order to improve the light emitting efficiency and the light emitting intensity of the organic light emitting diode, the anode of the organic light emitting diode is generally a stacked structure of indium tin oxide and silver, wherein the indium tin oxide is a high work function material and is used as a main structure of the anode, and the silver is mainly used for enabling the anode to have a reflection function due to high reflection performance. However, after the organic light emitting diode is used for a period of time, the silver particles are electromigration and diffuse into the indium tin oxide, and oxygen in the indium tin oxide is easy to generate oxidation reaction with silver to generate black silver oxide. This causes a decrease in the resistance and work function of the indium tin oxide (silver oxide is already present in the layer), which is detrimental to the injection of device holes, and a decrease in the transparency of the indium tin oxide, which leads to a decrease in the luminous efficiency of the organic light emitting diode. In addition, the black silver oxide can seriously reduce the reflectivity of the anode to further influence the luminous efficiency, and the silver diffusion range is large, so that the anode and the cathode circuit are possibly shorted, and the reliability of the organic light-emitting diode is influenced.
In view of the above, the present application provides an anode, a light emitting device, a display panel and a display apparatus to solve at least the above problems. The anode comprises a first sub-electrode, a first dielectric layer and a second sub-electrode which are sequentially stacked, wherein the first sub-electrode is a reflecting electrode, and the first dielectric layer comprises an insulating layer and a reducing material. The first dielectric layer is arranged between the first sub-electrode and the second sub-electrode to improve the problems of greatly reduced transparency and work function of the anode.
Note that, since the anode may be used as an anode in a light emitting device and the light emitting device may be applied to a display panel, in the following embodiments of the present disclosure, the structure of the display panel is directly described, and description is made of specific designs of the light emitting device and the anode in synchronization.
Specifically, at least one embodiment of the present application provides a display panel including an array substrate and a plurality of light emitting devices. The light emitting devices are positioned on the array substrate, and each light emitting device comprises an anode, a light emitting functional layer and a cathode which are sequentially stacked on the array substrate. The anode comprises a first sub-electrode, a first dielectric layer and a second sub-electrode which are sequentially overlapped on the array substrate, wherein the first sub-electrode is a reflecting electrode, and the first dielectric layer comprises an insulating layer and a reducing material. The application improves the problems of greatly reduced transparency and work function of the anode by arranging the first dielectric layer between the first sub-electrode and the second sub-electrode.
Next, a specific structure of a display panel in at least one embodiment of the present application will be described with reference to the accompanying drawings. In these drawings, a space rectangular coordinate system is established with the plane of the light-emitting surface of the display panel as a reference, so as to explain the positions of the structures in the display panel. In the rectangular space coordinate system, the X axis and the Y axis are parallel to the plane of the display panel, and the Z axis is perpendicular to the plane of the display panel. The display panel includes the anode and the light emitting device claimed in the present application, and the anode and the light emitting device are described together while the display panel is described.
At least one embodiment of the present application provides a display panel, as shown in fig. 1 and 2, the display panel 100 includes an array substrate 110 and a plurality of light emitting devices 120. Illustratively, the array substrate 110 may include a substrate 111 and a driving circuit layer 112.
Specifically, the substrate 111 may be made of a non-conductive material, and the substrate 111 may be made of glass, plastic, or sapphire, for example. It should be noted that the material of the substrate 111 is not specifically limited in the embodiment of the present application, and the material of the substrate 111 may be a flexible material (for example, polyimide) or a rigid material (for example, glass) according to design requirements.
As shown in fig. 2, the driving circuit layer 112 may include a pixel driving circuit including a plurality of transistors (e.g., thin film transistors TFTs), capacitors, and the like, for example, formed in various forms such as 2T1C (i.e., 2 transistors (T) and 1 capacitor (C)), 3T1C, or 7T 1C. The pixel driving circuit may be connected to the bonding region through a signal line to be connected to the control chip through the flexible circuit board, so that the control chip may control the display function of the display panel 100.
The plurality of light emitting devices 120 are positioned on the array substrate 110, and each light emitting device 120 includes an anode electrode 121, a light emitting function layer 122, and a cathode electrode 123 sequentially stacked on the array substrate 110.
The light emitting device 120 may be an organic light emitting diode, for example. The plurality of organic light emitting diodes constitute a solid light emitting structure of the sub-pixels of the display panel 100. An organic light emitting diode is a device that generates electroluminescence using a multi-layered organic thin film structure. The organic light emitting diode may include an anode 121, a light emitting functional layer 122, and a cathode 123 stacked in this order. The light emitting functional layer 122 includes at least a light emitting layer, and optionally, the light emitting functional layer 122 may further include at least one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and the like. The organic light emitting diode moves and migrates to the light emitting layer by holes generated from the anode 121 and electrons generated from the cathode 123 under the action of an electric field. When holes and electrons meet at the light emitting layer, energy excitons are generated, thereby exciting light emitting molecules in the light emitting layer to generate visible light. In the display panel 100 of top emission (anode is a reflective electrode or includes a reflective electrode), the anode 121 of the organic light emitting diode is electrically connected (directly or indirectly connected) to the source or drain of the thin film transistor in the driving circuit, so as to realize the control of the organic light emitting diode by the pixel driving circuit.
Specifically, as shown in fig. 1, the display panel 100 includes a display area 101 and a bezel area 102, a plurality of light emitting devices 120 are disposed in the display area 101, and the plurality of light emitting devices 120 are disposed in the display area 101 at intervals in an array arrangement.
Illustratively, as shown in fig. 3, the anode 121 of the light emitting device 120 includes a first sub-electrode 1211, a first dielectric layer 1212, and a second sub-electrode 1213 sequentially stacked on the array substrate 110, the first sub-electrode 1211 being a reflective electrode, the first dielectric layer 1212 including an insulating layer and a reducing material.
The anode 121 of the present application includes a first sub-electrode 1211, a first dielectric layer 1212, and a second sub-electrode 1213 sequentially stacked on the array substrate 110, that is, the first sub-electrode 1211 and the second sub-electrode 1213 are electrically isolated by the first dielectric layer 1212, and this structure may improve the problem of electron migration between the first sub-electrode 1211 and the second sub-electrode 1213, thereby improving the problem of reduction of light emitting efficiency of the organic light emitting diode due to reduction of work function of the second electrode caused by electron migration.
In one embodiment of at least one embodiment of the present application, the first sub-electrode 1211 is a metal, for example, the first sub-electrode 1211 may be made of at least one of a metal material such as silver, aluminum (Al), titanium (Ti), etc. Illustratively, the first sub-electrode 1211 is silver, and since the reflectivity of silver among metals is highest, light reflection is facilitated, and thus the display brightness may be improved by the first sub-electrode 1211 being silver. Note that the first sub-electrode 1211 is a reflective electrode for reflecting light emitted from the light emitting device 120 to increase the brightness of the display panel 100.
In one embodiment of at least one embodiment of the present application, the material of the second sub-electrode 1213 is a metal oxide, and optionally, the second electrode may be made of a transparent conductive material such as indium tin oxide (ito), indium Zinc Oxide (IZO), or the like. The second sub-electrode 1213 is electrically connected to the thin film transistor in the array substrate 110, and the second sub-electrode 1213 is connected to the light emitting function layer 122 in the light emitting device 120. The second electrode is illustratively indium tin oxide, which has high transparency and high work function, thus facilitating hole injection and improving luminous efficiency.
In one embodiment of at least one embodiment of the present application, the insulating layer is an inorganic layer, for example, the insulating layer includes silicon nitride (Si 3 N 4 ). The reduced material in the first dielectric layer 1212 includes hydrogen ions, hydrogen atoms, or amino groups. Alternatively, the first dielectric layer 1212 may be formed using a chemical vapor deposition method. For example, when the material of the insulating layer is silicon nitride, the specific reaction mode for preparing the insulating layer is SiH 4 +NH 3 +N 2 ＝Si 3 N 4 +H, wherein the silicon nitride is rich in reduced materials such as hydrogen ions, hydrogen atoms, or amino groups. That is, the first dielectric layer 1212 includes silicon nitride and hydrogen ions dispersed in the silicon nitrideThe hydrogen ions, hydrogen atoms or amino groups have reducibility in the subsequent annealing process, can reduce silver oxide into silver simple substance, inhibit black silver oxide from generating, improve the reflectivity of the first sub-electrode 1211, and also improve the problem that the display panel 100 displays dark spots due to damage of the individual light emitting devices 120 caused by short circuit between the anode 121 of the light emitting device 120 and the cathode 123 of the light emitting device 120.
In one implementation of at least one embodiment of the present application, as shown in fig. 4, the anode 121 further includes a second dielectric layer 1214, where the second dielectric layer 1214 is located between the first dielectric layer 1212 and the second sub-electrode 1213, and the refractive index of the second dielectric layer 1214 is greater than the refractive index of the first dielectric layer 1212. When the refractive index of the second dielectric layer 1214 is greater than that of the first dielectric layer 1212, and the light emitted by the light emitting functional layer 122 is emitted to the interface between the first dielectric layer 1212 and the second dielectric layer 1214, because the light is emitted to the photo-hydrophobic medium by the photo-dense medium, reflection occurs at the interface, and particularly, partial angle such as a large inclination angle (not less than a total reflection angle) of the light is totally reflected at the interface, so that the reflection effect of the light can be improved, and the brightness of the light emitting device 120 can be improved.
In a specific embodiment of the first aspect of the present application, different light emitting devices 120 have light emitting layers of different colors to emit outgoing light of different wavelengths, for example, the display panel 100 may include a plurality of sub-pixels of red, green, and blue, and the like colors, and correspondingly, the light emitting devices 120 may emit light of red, green, and blue, and correspondingly, the wavelengths of the light of different colors are different.
For example, the second dielectric layer 1214 may be further designed to have a reflection enhancing function for light of a specific color emitted from the light emitting device, so as to enhance the reflection effect of the anode. For example, the optical thickness of second dielectric layer 1214 is set such that light reflected at the interface of first dielectric layer 1212 and second dielectric layer 1214 interferes constructively with the presentation of interference reflected at the surface of second dielectric layer 1214 facing away from first dielectric layer 1212. Specifically, the optical thickness of the second dielectric layer 1214 is n×h= (k+1/4) λ, where N is the refractive index of the second dielectric layer 1214, H is the thickness of the second dielectric layer 1214, K is a natural number, λ is the wavelength of the incident light corresponding to the anode, and n×h is the optical thickness. In this embodiment, the first dielectric layer 1212 and the second dielectric layer 1214 are combined to form a total reflection layer (i.e., a reflection enhancing layer), which can further enhance the reflection effect of the anode, thereby enhancing the brightness of the light emitting device 120.
In one implementation of at least one embodiment of the present application, the second dielectric layer 1214 is a conductive material. For example, the second dielectric layer 1214 is graphene. The second dielectric layer 1214 is graphene and can be used together with the second sub-electrode 1213 as the real anode 121 of the light emitting device 120, the second dielectric layer 1214 is electrically connected with the source and drain electrodes of the thin film transistor, and the second sub-electrode 1213 is electrically connected with the light emitting functional layer 122. The graphene has excellent conductivity (the resistivity is about 10 < -8 > omega.m), can reduce the potential barrier of hole injection, and improves the hole injection and transmission capacity of the organic electroluminescent display device, thereby improving the luminous performance of the device. Therefore, the second dielectric layer 1214 is graphene, which can improve the conductivity of the light emitting device 120 while playing a role of increasing reflection.
In one implementation of at least one embodiment of the present application, as shown in fig. 5, the anode 121 further includes a third sub-electrode 1215, and the third sub-electrode 1215 is located between the first sub-electrode 1211 and the array substrate 110. The third sub-electrode 1215 may be made of indium tin oxide, indium zinc oxide, etc., and the third sub-electrode 1215 functions as a buffer layer, so that the problem of poor bonding force between the array substrate 110 and the first sub-electrode 1211 can be alleviated.
In one embodiment of at least one embodiment of the present application, as shown in fig. 6, the array substrate 110 includes a driving circuit layer 112, and the driving circuit layer 112 includes a plurality of thin film transistors TFTs disposed at intervals. The display panel 100 further includes a pixel defining layer 130, and the pixel defining layer 130 includes a plurality of pixel openings corresponding to the anode electrode 121. As shown in fig. 7, the source/drain of the thin film transistor is electrically connected to the second dielectric layer 1214 through the via 140, the orthographic projection of the via 140 on the pixel defining layer 130 is outside the pixel opening, and the via 140 penetrates the third sub-electrode 1215, the first sub-electrode 1211 and the first dielectric layer 1212.
In one embodiment of at least one embodiment of the present application, as shown in fig. 8, the array substrate 110 further includes a driving circuit layer 112, and the driving circuit layer 112 includes a plurality of thin film transistors TFTs disposed at intervals. The display panel 100 further includes a pixel defining layer 130, and the pixel defining layer 130 includes a plurality of pixel openings corresponding to the anode electrode 121. The anode 121 includes a first sub-electrode 1211, a first dielectric layer 1212, and a second sub-electrode 1213 sequentially stacked on the array substrate 110. The source/drain electrode of the thin film transistor is electrically connected to the second sub-electrode 1213 through the via hole 140, the orthographic projection of the via hole 140 on the pixel defining layer 130 is located outside the pixel opening, and the via hole 140 penetrates through the first sub-electrode 1211 and the first dielectric layer 1212.
In the above embodiment, the orthographic projection of the through-hole 140 on the pixel defining layer 130 is located outside the pixel opening, and it is possible to avoid reducing the influence of the through-hole 140 on the reflection effect of the first sub-electrode 1211 by passing through the first sub-electrode 1211 located within the pixel opening.
Fig. 8 is a schematic structural diagram of a display device 200 according to an embodiment of the application. As shown in fig. 8, the display device 200 includes the display panel 100 in the above-described embodiment. The display device 200 further includes a housing 201 and a cover plate 202, wherein the housing 201 and the cover plate 202 form an accommodating space, and the display panel 100 is disposed in the accommodating space and located on the light emitting side of the display panel 100. The cover 202 is a transparent structure, for example, the cover 202 may be made of glass.
The display device 200 further includes electronic components such as a motherboard, a battery, and a camera. The case 201 and the cover plate 202 serve to protect the display panel 100 disposed therein and the above-described electronic components.
Specifically, the display device 200 may be an electronic product such as a smart phone, a computer display, a game machine, and a television.
The foregoing is only illustrative of the present application and is not to be construed as limiting thereof, but rather as presently claimed, and is intended to cover all modifications, alternatives, and equivalents falling within the spirit and scope of the application.
Claims (10)
1. The anode is characterized by comprising a first sub-electrode, a first dielectric layer and a second sub-electrode which are sequentially stacked, wherein the first sub-electrode is a reflecting electrode, and the first dielectric layer comprises an insulating layer and a reducing material.
2. The anode according to claim 1, wherein the reducing material comprises hydrogen ions, hydrogen atoms, or amino groups.
3. The anode according to claim 2, wherein the material of the second sub-electrode is a metal oxide, the material of the first sub-electrode is a metal, the material of the insulating layer is an inorganic layer,
preferably, the material of the insulating layer includes silicon nitride.
4. The anode of any one of claims 1 to 3, further comprising a second dielectric layer, the second dielectric layer being located between the first dielectric layer and the second sub-electrode, and the second dielectric layer having a refractive index greater than a refractive index of the first dielectric layer.
5. The anode of claim 4, wherein the optical thickness of the second dielectric layer is configured such that light reflected at the interface of the first dielectric layer and the second dielectric layer interferes constructively with a presentation of interference reflected at a surface of the second dielectric layer facing away from the first dielectric layer,
preferably, the optical thickness of the second dielectric layer is n×h= (k+1/4) λ, where N is the refractive index of the second dielectric layer, H is the thickness of the second dielectric layer, K is a natural number, λ is the wavelength of the incident light corresponding to the anode, and n×h is the optical thickness.
6. The anode of claim 4, wherein the second dielectric layer is a conductive material,
preferably, the second dielectric layer is graphene.
7. The anode of claim 1, further comprising a third sub-electrode located on a side of the first sub-electrode facing away from the first dielectric layer.
8. A light-emitting device comprising the anode according to any one of claims 1 to 6, a light-emitting functional layer and a cathode stacked on one side of the anode.
9. A display panel, comprising:
an array substrate; and
a plurality of light emitting devices of claim 8 disposed on the array substrate;
preferably, the method comprises the steps of,
the array substrate comprises a driving circuit layer, the driving circuit layer comprises a plurality of thin film transistors which are arranged at intervals, the display panel further comprises a pixel limiting layer, the pixel limiting layer comprises a plurality of pixel openings which correspond to the anode, the anode further comprises a third sub-electrode, the third sub-electrode is positioned on one side, away from the first dielectric layer, of the first sub-electrode, the source drain electrode of the thin film transistor is electrically connected with the second dielectric layer through a through hole, the orthographic projection of the through hole on the pixel limiting layer is beyond the pixel openings, and the through hole penetrates through the third sub-electrode, the second sub-electrode and the first dielectric layer; or alternatively
The array substrate further comprises a driving circuit layer, a plurality of thin film transistors are arranged at intervals, the display panel further comprises a pixel limiting layer, the pixel limiting layer comprises a plurality of pixel openings corresponding to the anodes, the source drain electrodes of the thin film transistors are electrically connected with the first sub-electrodes through holes, orthographic projections of the through holes on the pixel limiting layer are located outside the pixel openings, and the through holes penetrate through the second sub-electrodes and the first dielectric layer.
10. A display device comprising the display panel of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310537693.7A CN116723722A (en) | 2023-05-12 | 2023-05-12 | Anode, light emitting device, display panel, and display apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310537693.7A CN116723722A (en) | 2023-05-12 | 2023-05-12 | Anode, light emitting device, display panel, and display apparatus |
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| CN116723722A true CN116723722A (en) | 2023-09-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310537693.7A Pending CN116723722A (en) | 2023-05-12 | 2023-05-12 | Anode, light emitting device, display panel, and display apparatus |
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| Country | Link |
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| CN (1) | CN116723722A (en) |
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