CN116722440A - Laser and preparation method thereof - Google Patents

Laser and preparation method thereof Download PDF

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Publication number
CN116722440A
CN116722440A CN202310784718.3A CN202310784718A CN116722440A CN 116722440 A CN116722440 A CN 116722440A CN 202310784718 A CN202310784718 A CN 202310784718A CN 116722440 A CN116722440 A CN 116722440A
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China
Prior art keywords
layer
link
laser
link layer
buried
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CN202310784718.3A
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Chinese (zh)
Inventor
蔡晓明
刘超
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Quanzhou San'an Optical Communication Technology Co ltd
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Xiamen Sanan Integrated Circuit Co Ltd
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Priority to CN202310784718.3A priority Critical patent/CN116722440A/en
Publication of CN116722440A publication Critical patent/CN116722440A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The application relates to the technical field of lasers, in particular to a laser, which comprises a first epitaxial layer, a grating manufacturing layer, a buried layer, a link layer, a potential barrier gradual change layer and an ohmic contact layer which are sequentially stacked from bottom to top; wherein, the grating manufacturing layer is positioned in the buried layer; the link layer comprises a first link layer and a second link layer, and the second link layer is positioned between the first link layer and the buried layer; the refractive index of the first link layer is smaller than the refractive index of the second link layer. According to the laser provided by the application, the refractive index of the ridge is enhanced by arranging the first link layer and the second link layer, so that the refractive index difference between the ridge and air at two sides is increased, the light field can be better limited in the transverse direction, the volume of the light field is reduced, the bandwidth can be effectively improved, and the threshold current is reduced.

Description

Laser and preparation method thereof
Technical Field
The application relates to the technical field of DFB lasers, in particular to a laser and a preparation method thereof.
Background
The distributed feedback laser (DFB) is to build Bragg grating in the semiconductor, and to realize the selection of single longitudinal mode by means of the distributed feedback of light, and has high speed, narrow linewidth and dynamic single longitudinal mode working characteristics.
The current threshold, bandwidth and divergence angle of the DFB are important parameters for measuring the overall performance of the DFB laser, especially for high speed DFB laser applications.
Currently, conventional DFB lasers use an inp material as the ridge, and use the index difference between the inp and the air on both sides to limit the lateral expansion of the optical field. However, in the practical use process of the DFB chip, the scheme of taking the I nP material as the ridge does not optimistically limit the lateral direction of the optical field, and the lateral expansion of the optical field is serious, so that the photon volume is too large, and the current threshold of the DFB is further caused to be too large, so that the bandwidth loss is serious, and the performance of the device is severely limited.
Therefore, how to control the lateral expansion of the light field more strongly becomes a problem to be solved.
Disclosure of Invention
In order to solve the problem that the conventional DFB laser has insufficient transverse limitation on an optical field, the application provides a laser which comprises a first epitaxial layer, a grating manufacturing layer, a buried layer, a link layer, a potential barrier gradual change layer and an ohmic contact layer which are sequentially stacked from bottom to top;
wherein, the grating manufacturing layer is positioned in the buried layer; the link layer comprises a first link layer and a second link layer, and the second link layer is positioned between the first link layer and the buried layer; the refractive index of the first link layer is smaller than the refractive index of the second link layer.
In one embodiment, the first link layer is an InP layer.
In one embodiment, the refractive index of the second link layer is greater than 3.3 in the long wavelength band.
In one embodiment, the material of the second link layer includes any one of InGaAsP, alInGaAs, inGaAs.
In one embodiment, the second link layer is provided in multiple layers.
In one embodiment, the thickness of the second link layer is greater than 200nm.
In an embodiment, the first epitaxial layer comprises a substrate, a lower buffer layer, a lower confinement layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an upper confinement layer, an upper buffer layer, a corrosion barrier layer, and a cladding layer stacked in sequence from bottom to top.
In one embodiment, the substrate is an InP substrate; the lower buffer layer is an InP layer; the lower limiting layer is an A l I nAs layer; the lower waveguide layer is an A l Ga I nAs layer; the quantum well is an A/L Ga/I nAs layer; the upper waveguide layer is an A/Ga/I nAs layer; the upper limiting layer is an A l I nAs layer; the upper buffer layer is an InP layer, and the corrosion barrier layer is an InGaAsP layer; the cladding layer is an InP layer, and the grating manufacturing layer is an InGaAsP layer; the buried layer is an InP layer; the potential barrier gradual change layer is an InGaAsP layer; the ohmic contact layer is an InGaAs layer.
The application also provides a preparation method of the laser, which comprises the following steps:
performing first epitaxial growth on the substrate; sequentially growing a lower buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an upper limiting layer, an upper buffer layer, a corrosion barrier layer, a cladding layer and a grating manufacturing layer on the upper surface of a substrate to obtain an epitaxial wafer;
photoetching the epitaxial wafer to obtain the epitaxial wafer with the grating structure;
carrying out secondary epitaxial growth on the epitaxial wafer with the grating structure; and sequentially growing a buried layer, a second link layer, a first link layer, a potential barrier gradual change layer and an ohmic contact layer on the upper surface of the grating manufacturing layer to obtain the laser.
In one embodiment, the first and second link layers are grown at a pressure of 50mbar and a growth temperature of 650 ℃.
Based on the above, compared with the prior art, the application has the following beneficial effects:
1. according to the laser provided by the application, the refractive index of the ridge is enhanced by arranging the first link layer and the second link layer, so that the refractive index difference between the ridge and air at two sides is increased, the optical field is better limited in the transverse direction, the volume of the optical field is reduced, the bandwidth of a device is finally and effectively increased, and the threshold current of the device is reduced.
2. The laser provided by the application adopts the second linking layer with larger refractive index and the asymmetric mode expansion layer to reduce beam divergence, slightly expands the light field to a high refractive area, further reduces the divergence angle, further limits the transverse expansion of the light field, and enables the light spot to be more approximate to a circular light spot.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. The objectives and other advantages of the application will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
For a clearer description of embodiments of the application or of the solutions of the prior art, the drawings that are needed in the description of the embodiments or of the prior art will be briefly described, it being obvious that the drawings in the description below are some embodiments of the application, and that other drawings can be obtained from them without inventive effort for a person skilled in the art; the positional relationships described in the drawings in the following description are based on the orientation of the elements shown in the drawings unless otherwise specified.
FIG. 1 is a schematic diagram of an embodiment of the present application;
FIG. 2 is a schematic diagram of another embodiment;
FIG. 3 is a schematic diagram of another embodiment;
FIG. 4 is a light field distribution diagram of an embodiment of the present application;
fig. 5 is a light field distribution diagram of a structure without a second link layer.
Reference numerals:
01 substrate 02 lower buffer layer 03 lower confinement layer
04 lower waveguide layer 05 quantum well 06 upper waveguide layer
07 upper confinement layer 08 upper buffer layer 09 corrosion barrier layer
10 cladding 11 grating fabrication layer 12 buried layer
13 first link layer 131 second link layer 132
14 potential barrier graded layer 15 ohm contact layer 16 optical field
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application; the technical features designed in the different embodiments of the application described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that all terms used in the present application (including technical terms and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs and are not to be construed as limiting the present application; it will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As shown in fig. 1 to 3, the present application provides a laser, which includes a first epitaxial layer, a grating fabrication layer 11, a buried layer 12, a link layer 13, a barrier graded layer 14 and an ohmic contact layer 15, which are stacked in order from bottom to top;
the grating manufacturing layer 11 is positioned inside the buried layer 12; the link layer 13 includes a first link layer 131 and a second link layer 132, where the second link layer 132 is located between the first link layer 131 and the buried layer 12, i.e. between the buried layer 12 and the barrier graded layer 14, the second link layer 132 and the first link layer 131 are sequentially disposed. The refractive index of the first link layer 131 is smaller than that of the second link layer 132.
As shown in fig. 4 and 5, taking an epitaxial structure of a DFB laser as an example of the first epitaxial layer of the laser of the present application, the substrate 01, the lower buffer layer 02, the lower confinement layer 03, the lower waveguide layer 04, the quantum well 05, the upper waveguide layer 06, the upper confinement layer 07, the upper buffer layer 08, the corrosion barrier layer 09, the cladding layer 10, the grating formation layer 11, the buried layer 12, the link layer 13, the barrier graded layer 14, and the ohmic contact layer 15 are stacked in this order from bottom to top, and the grating formation layer 11, the buried layer 12, the link layer 13, the barrier graded layer 14, and the ohmic contact layer 15 form a ridge waveguide structure.
Compared with a device structure without the second link layer 132, in the actual light field 16 distribution, the application can limit the light field 16 better in the transverse direction, reduce the volume of the light field 16, reduce the divergence angle and enable the light spot finally generated by the device to be more approximate to a circular light spot. Therefore, the bandwidth of the device is improved, the threshold current is reduced, and the device obtains more excellent performance.
In one embodiment, as shown in fig. 2, a first link layer 131 is further disposed between the second link layer 132 and the buried layer 12. That is, the overall structure of the laser can be regarded as inserting the second link layer 132 having a higher refractive index in the middle of the first link layer 131, thereby improving the lateral control ability of the optical field without affecting the overall effect.
Preferably, the first link layer 131 is an InP layer.
In one embodiment, the refractive index of the second link layer 132 is greater than 3.3 in the long wavelength band. Specifically, the refractive index of the second link layer 132 is made to be greater than 3.3, so that the refractive index of the ridge of the laser is greater than that of the conventional structure, the ridge and air on two sides have a larger refractive index difference, the light field of the laser pair is limited in the transverse direction and stretched in the longitudinal direction finally, and the light field distribution of the laser is more in accordance with the device requirements.
Preferably, the material of the second link layer 132 includes any one of InGaAsP, AIInGaAs, inGaAs.
Preferably, as shown in fig. 3, the second link layer 132 is provided in a plurality of layers. Specifically, the arrangement of the second link layer 132 can be used as an energy band between the ohmic contact layer 15 and the first link layer 131, so that carriers can smoothly move to the quantum well 05, and carrier aggregation is reduced, thereby reducing resistance.
In one embodiment, the thickness of the second link layer 132 is greater than 200nm. Preferably, the thickness of the second link layer 132 is not less than 500nm.
Preferably, the thickness of the second link layer 132 is much larger than that of the first link layer 131, so that the laser ridge can obtain a larger refractive index, and thus the lateral expansion of the optical field can be controlled.
Further, the thickness of the second link layer 132 is much greater than the barrier graded layer 14.
In one embodiment, as shown in fig. 1-3, the first epitaxial layer comprises a substrate, a lower buffer layer, a lower confinement layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an upper confinement layer, an upper buffer layer, an etch stop layer, and a cladding layer, stacked in that order from bottom to top.
Preferably, the substrate 01 is an InP substrate 01; the lower buffer layer 02 is an InP layer; the lower restriction layer 03 is an ai nAs layer; the lower waveguide layer 04 is an ai Ga I nAs layer; the quantum well 05 is an A/L Ga/I nAs layer; the upper waveguide layer 06 is an al Ga I nAs layer; the upper confinement layer 07 is an ai nAs layer; the upper buffer layer 08 is an InP layer, and the corrosion barrier layer 09 is an InGaAsP layer; the cladding 10 is an InP layer, and the grating manufacturing layer 11 is an InGaAsP layer; the buried layer 12 is an InP layer; the potential barrier graded layer 14 is an InGaAsP layer; the ohmic contact layer 15 is an InGaAs layer.
The application also provides a preparation method of the laser, which comprises the following steps:
performing a first epitaxial growth on the substrate 01; sequentially growing a lower buffer layer 02, a lower limiting layer 03, a lower waveguide layer 04, a quantum well 05, an upper waveguide layer 06, an upper limiting layer 07, an upper buffer layer 08, a corrosion barrier layer 09, a cladding layer 10 and a grating manufacturing layer 11 on the upper surface of a substrate 01 to obtain an epitaxial wafer;
photoetching the epitaxial wafer to obtain the epitaxial wafer with the grating structure;
carrying out secondary epitaxial growth on the epitaxial wafer with the grating structure; a buried layer 12, a second link layer 132, a first link layer 131, a barrier graded layer 14, and an ohmic contact layer 15 are sequentially grown on the upper surface of the grating fabrication layer 11, thereby obtaining a laser.
Preferably, the growth conditions of the first link layer 131 are used for growth at the end of the buried layer 12.
In one embodiment, the first link layer 131 and the second link layer 132 are grown at a pressure of 50mbar and a growth temperature of 650 ℃.
Preferably, the growth rate of the first link layer 131 is 0.37nm/s and the growth thickness is 400nm. The growth rate of the second link layer 132 was 0.3nm/s and the growth thickness was 500nm.
In addition, it should be understood by those skilled in the art that although many problems exist in the prior art, each embodiment or technical solution of the present application may be modified in only one or several respects, without having to solve all technical problems listed in the prior art or the background art at the same time. Those skilled in the art will understand that nothing in one claim should be taken as a limitation on that claim.
Although terms such as a substrate, a lower buffer layer, a lower confinement layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an upper confinement layer, an upper buffer layer, an etch stop layer, a cladding layer, a grating fabrication layer, a buried layer, a link layer, a barrier graded layer, and an ohmic contact layer are more used herein, the possibility of using other terms is not excluded. These terms are used merely for convenience in describing and explaining the nature of the application; they are to be interpreted as any additional limitation that is not inconsistent with the spirit of the present application; the terms first, second, and the like in the description and in the claims of embodiments of the application and in the above-described figures, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.

Claims (10)

1. A laser, characterized by: the semiconductor device comprises a first epitaxial layer, a grating manufacturing layer, a buried layer, a link layer, a potential barrier gradual change layer and an ohmic contact layer which are sequentially stacked from bottom to top;
wherein the grating fabrication layer is located inside the buried layer; the link layer comprises a first link layer and a second link layer, and the second link layer is positioned between the first link layer and the buried layer; the refractive index of the first link layer is smaller than the refractive index of the second link layer.
2. The laser of claim 1, wherein: the first link layer is an InP layer.
3. The laser of claim 1, wherein: the refractive index of the second link layer in the long wave band is greater than 3.3.
4. The laser of claim 1, wherein: the material of the second link layer includes any one of InGaAsP, alInGaAs, inGaAs.
5. The laser of claim 1, wherein: the second link layer is provided in multiple layers.
6. The laser of claim 1, wherein: the thickness of the second link layer is greater than 200nm.
7. The laser of claim 1, wherein: the first epitaxial layer comprises a substrate, a lower buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an upper limiting layer, an upper buffer layer, a corrosion barrier layer and a cladding layer which are sequentially stacked from bottom to top.
8. The laser of claim 7, wherein: the substrate is an InP substrate; the lower buffer layer is an InP layer; the lower limiting layer is an AlInAs layer; the lower waveguide layer is an AlGaInAs layer; the quantum well is an AlGaInAs layer; the upper waveguide layer is an AlGaInAs layer; the upper limiting layer is an AlInAs layer; the upper buffer layer is an InP layer, and the corrosion barrier layer is an InGaAsP layer; the cladding layer is an InP layer, and the grating manufacturing layer is an InGaAsP layer; the buried layer is an InP layer; the potential barrier gradual change layer is an InGaAsP layer; the ohmic contact layer is an InGaAs layer.
9. The preparation method of the laser is characterized by comprising the following steps:
performing first epitaxial growth on the substrate; sequentially growing a lower buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an upper limiting layer, an upper buffer layer, a corrosion barrier layer, a cladding layer and a grating manufacturing layer on the upper surface of the substrate to obtain an epitaxial wafer;
photoetching the epitaxial wafer to obtain the epitaxial wafer with the grating structure;
carrying out secondary epitaxial growth on the epitaxial wafer with the grating structure; and sequentially growing a buried layer, a second link layer, a first link layer, a potential barrier graded layer and an ohmic contact layer on the upper surface of the grating manufacturing layer to obtain the laser.
10. The method of manufacturing a laser according to claim 9, wherein: the growth pressure of the first link layer and the second link layer is 50mbar, and the growth temperature is 650 ℃.
CN202310784718.3A 2023-06-29 2023-06-29 Laser and preparation method thereof Pending CN116722440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310784718.3A CN116722440A (en) 2023-06-29 2023-06-29 Laser and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310784718.3A CN116722440A (en) 2023-06-29 2023-06-29 Laser and preparation method thereof

Publications (1)

Publication Number Publication Date
CN116722440A true CN116722440A (en) 2023-09-08

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Effective date of registration: 20231023

Address after: No. 2, Lianshan Industrial Zone, Gushan Village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province, 362343

Applicant after: Quanzhou San'an Optical Communication Technology Co.,Ltd.

Address before: No.753-799 Min'an Avenue, Hongtang Town, Tong'an District, Xiamen City, Fujian Province

Applicant before: XIAMEN SANAN INTEGRATED CIRCUIT Co.,Ltd.

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