CN116718359A - Vacuum equipment for simulating exposure environment of extreme ultraviolet lithography machine - Google Patents

Vacuum equipment for simulating exposure environment of extreme ultraviolet lithography machine Download PDF

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Publication number
CN116718359A
CN116718359A CN202310449121.3A CN202310449121A CN116718359A CN 116718359 A CN116718359 A CN 116718359A CN 202310449121 A CN202310449121 A CN 202310449121A CN 116718359 A CN116718359 A CN 116718359A
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vacuum
structural member
hollow
simulating
tested
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段天利
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Shenzhen Technology University
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Shenzhen Technology University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N17/00—Investigating resistance of materials to the weather, to corrosion, or to light
    • G01N17/004—Investigating resistance of materials to the weather, to corrosion, or to light to light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0207—Details of measuring devices
    • G01M11/0214—Details of devices holding the object to be tested
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/04—Optical benches therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/06—Heater elements structurally combined with coupling elements or holders

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
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  • Environmental & Geological Engineering (AREA)
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  • Biodiversity & Conservation Biology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The application relates to the technical field of extreme ultraviolet lithography, in particular to vacuum equipment for simulating an exposure environment of an extreme ultraviolet lithography machine. Basic scientific research is performed for improving reflectivity stability by simulating an extreme ultraviolet exposure environment. A vacuum apparatus for simulating an exposure environment of an euv lithography machine, comprising: a vacuum chamber; the objective table is of a hollow platy structure; the hollow platy structure is fixed in the vacuum cavity through the bottom connecting piece, and the objective table is used for placing a structural member to be tested; the heating device is arranged in the hollow cavity of the hollow platy structure and is used for heating the structural member to be tested; the temperature detection device is arranged on the objective table and is used for detecting the heating temperature of the structural member to be detected; and the control device is electrically connected with the heating device and the temperature detection device and is used for controlling the opening, closing and heating temperatures of the heating device, acquiring the temperature detected by the temperature detection device and outputting the temperature detected by the temperature detection device.

Description

Vacuum equipment for simulating exposure environment of extreme ultraviolet lithography machine
Technical Field
The application relates to the technical field of extreme ultraviolet lithography, in particular to vacuum equipment for simulating an exposure environment of an extreme ultraviolet lithography machine.
Background
With the continuous development of integrated circuit technology, the feature size of the transistor is smaller and smaller, and the most advanced lithography machine appearing with the feature size is an extreme ultraviolet lithography machine, and the extreme ultraviolet lithography machine adopts an extreme ultraviolet light source of 13.5nm to expose, and the wavelength of the extreme ultraviolet light is close to x-rays and is easy to be absorbed by substances, even absorbed by air, so that a transmission type optical path system manufactured by a glass lens cannot be used, and a brand new reflection type extreme ultraviolet exposure system needs to be developed.
At present, the reflection type extreme ultraviolet exposure system has the problem of reflectivity stability of an optical element due to high-energy EUV photon radiation, pollutants in an exposure environment and the like, so that basic scientific research on how to simulate the extreme ultraviolet exposure environment to improve the reflectivity stability of the optical element is a problem to be solved at present.
Disclosure of Invention
Based on the above, the application provides a vacuum device for simulating the exposure environment of an extreme ultraviolet lithography machine, so as to simulate the extreme ultraviolet exposure environment and perform basic scientific research on improving the reflectivity stability.
In a first aspect, there is provided a vacuum apparatus for simulating an exposure environment of an euv lithography machine, comprising:
a vacuum chamber;
the objective table is of a hollow platy structure; the hollow platy structure is fixed in the vacuum cavity through the bottom connecting piece, and the objective table is used for placing the structure spare that awaits measuring, and the material of hollow platy structure includes: a thermally conductive material;
the heating device is arranged in the hollow cavity of the hollow platy structure and is used for heating the structural member to be tested;
the temperature detection device is arranged on the objective table and is used for detecting the heating temperature of the structural member to be detected;
the control device is arranged outside the vacuum cavity, is electrically connected with the heating device and the temperature detection device, and is used for controlling the opening, closing and heating temperatures of the heating device, acquiring the temperature detected by the temperature detection device and outputting the temperature detected by the temperature detection device.
Optionally, the vacuum apparatus further comprises: the device comprises a hollow annular member and a gas supply device, wherein the hollow annular member is used for encircling the periphery of a structural member to be tested, and a gas inlet communicated with the gas supply device and a gas outlet used for sweeping gas of the structural member to be tested are arranged on a hollow cavity of the hollow annular member;
a valve is arranged at a gas outlet of the gas supply device, and the control device is electrically connected with the valve and is used for controlling the gas supply device to output gas or stop outputting gas;
and/or the number of the groups of groups,
the vacuum apparatus further comprises: and the condensing device is arranged in the hollow cavity of the hollow platy structure and is used for condensing the structural member to be detected.
Optionally, the vacuum apparatus further comprises: the control device is also electrically connected with the lifting device and the first vacuum gauge;
the control device is used for acquiring a first vacuum degree detected by the first vacuum gauge and outputting the first vacuum degree;
the lifting device is connected with the heat shield and is used for driving the heat shield to ascend or descend under the control of the control device so as to control the heat shield to expose the structural member to be tested and the hollow annular member into the vacuum cavity or control the heat shield to cover the structural member to be tested and the hollow annular member;
and/or the number of the groups of groups,
the shell of the vacuum cavity is also provided with a second vacuum gauge, the second vacuum gauge is electrically connected with a control device, and the control device is used for acquiring a second vacuum degree detected by the second vacuum gauge and outputting the second vacuum degree.
Optionally, an infrared heating device is also arranged in the heat shield;
alternatively, the infrared heating device is an infrared heating tube encircling the inner wall of the heat shield.
Optionally, the material of the heat shield comprises: a ceramic material.
Optionally, the hollow annular member is integral with the stage;
and/or the number of the groups of groups,
the vacuum apparatus further comprises: the device comprises a plurality of spring clamps arranged on an objective table, wherein one end of each spring clamp is fixed on the objective table, and the other end of each spring clamp is used for pressing down on the surface of a structural member to be tested, which is close to the edge, and fixing the structural member to be tested.
Optionally, two hollow annular members are arranged, the positions of the two hollow annular members and the positions of the two structural members to be tested are in one-to-one correspondence, so that two groups of components respectively comprising one hollow annular member are formed, and the two groups of components are arranged side by side on the objective table;
the vacuum apparatus further comprises: the first opening is arranged on the shell of the vacuum cavity and is used for being connected with an electron beam generating device, the electron beam generating device is used for generating electron beams, and the electron beams are used as radiation beams to irradiate the surface of the structural member to be detected; or, the first opening is provided with a transparent window, the transparent window is used for allowing a laser beam to penetrate, the laser beam is used as a radiation beam to irradiate the surface of the structural member to be detected, and the wavelength of the laser beam comprises: 193nm and/or 248nm;
and, the vacuum apparatus further comprises: a first connection port which is arranged on the shell of the vacuum cavity and is used for being connected with the secondary electron probe; the secondary electron probe is used for detecting the yield of secondary electrons in the vacuum cavity.
Optionally, the bottom connecting piece is rotatably connected with the bottom of the vacuum cavity and is used for driving the two structural members to be tested to a first position, and the first position is opposite to the first opening;
when the first position is opposite to the first opening, the radiation beam can vertically irradiate to the surface of the structural member to be tested through the first opening or the transparent window.
Optionally, the material of the transparent window comprises: quartz material.
Optionally, the vacuum apparatus further comprises: and a second connecting port which is arranged on the shell of the vacuum cavity and is used for being connected with a sample inlet of the thermal analyzer.
In the vacuum apparatus for simulating an exposure environment of an euv lithography machine according to an embodiment of the present application, by providing an objective table and setting the objective table as a hollow plate-like structure, the hollow plate-like structure includes: the heat conduction material and the heating device is arranged in the hollow cavity of the hollow plate-shaped structure, the temperature detection device is arranged on the object stage, the structural member to be detected can be heated, and the heating temperature of the structural member to be detected is detected in real time, so that the temperature rise of the structural member to be detected can be simulated due to the irradiation of extreme ultraviolet light in the extreme ultraviolet exposure, and the reflectivity stability is poor due to the influence of the temperature on the performance (such as aberration) of the multilayer film of the reflecting mirror, therefore, the heating temperature of the structural member to be detected is output through the control device, the relation between the temperature and the performance (such as aberration) of the multilayer film of the reflecting mirror can be researched by researchers, and the basic scientific research on the improvement of the reflectivity stability can be performed by simulating the extreme ultraviolet exposure environment.
In addition, in the vacuum environment, the temperature control is different, so that in the vacuum equipment provided by the application, the heating device is used for heating the structural member to be detected in the vacuum environment, the temperature detection device is used for detecting the heating temperature of the structural member to be detected, the performance (such as aberration) change and the like of the multilayer film of the reflecting mirror caused by the temperature change in the vacuum environment can be studied, and the exposure condition of extreme ultraviolet light can be further studied on a basic basis.
Drawings
FIG. 1 is a schematic diagram of a vacuum apparatus for simulating an exposure environment of an EUV lithography machine according to an embodiment of the present application;
FIG. 2 is a schematic diagram of another embodiment of a vacuum apparatus for simulating an exposure environment of an EUV lithography machine;
FIG. 3 is an exploded view of another vacuum apparatus for simulating an exposure environment of an EUV lithography machine according to an embodiment of the present application;
FIG. 4 is a schematic diagram of another embodiment of a vacuum apparatus for simulating an exposure environment of an EUV lithography machine;
fig. 5 is a schematic diagram of an overall architecture of a computer device according to an embodiment of the present application.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
In the drawings, the size of each constituent element, the thickness of a layer, or a region may be exaggerated for clarity. Accordingly, one embodiment of the present application is not necessarily limited to this size, and the shapes and sizes of the respective components in the drawings do not reflect the actual scale. Further, the drawings schematically show ideal examples, and one embodiment of the present application is not limited to the shapes, numerical values, and the like shown in the drawings.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
Based on the above problems, some embodiments of the present application provide a vacuum apparatus for simulating an exposure environment of an euv lithography machine, as shown in fig. 1 and 2, the vacuum apparatus 10 comprising: a vacuum chamber 1, a stage 2, a heating device 3, a temperature detecting device 4 and a control device 5; wherein, objective table 2 is cavity platelike structure, and this cavity platelike structure passes through bottom connecting piece 6 to be fixed in vacuum cavity 1, and objective table 2 is used for placing structure 20 that awaits measuring, and cavity platelike structure's material includes: a thermally conductive material; the heating device 3 is arranged in the hollow cavity of the hollow platy structure and is used for heating the structural member 20 to be tested; the temperature detection device 4 is arranged on the objective table 2 and is used for detecting the heating temperature of the structural member 20 to be detected; the control device 5 is disposed outside the vacuum chamber, electrically connected to the heating device 3 and the temperature detecting device 4, and is configured to control the on/off and heating temperature of the heating device 3, obtain the temperature detected by the temperature detecting device 4, and output the temperature detected by the temperature detecting device 4.
The heat conductive material may include: stainless steel materials, and the like.
Wherein, the shell 11 of the vacuum chamber 1 can be made of stainless steel materials. The stainless steel material has higher strength and can provide exposure environment with low temperature as 10 -5 the vacuum degree of the ttor can simulate the exposure environment of the extreme ultraviolet lithography machine.
As shown in fig. 1 and 2, an opening L is provided on a housing 11 of the vacuum chamber 1, and a vacuum pumping system is connected to the opening L, so that the vacuum degree in the vacuum chamber 1 can be adjusted by the vacuum pumping system.
In some embodiments, the structure 20 may be any structure that can affect exposure accuracy under heating. The structure 20 may be a wafer or an optical element, and the optical element may be a mirror or a mask plate.
In the vacuum apparatus 10 for simulating an exposure environment of an euv lithography machine according to an embodiment of the present application, by providing the stage 2 and setting the stage 2 as a hollow plate-like structure comprising: the heat conducting material and the heating device 3 is arranged in the hollow cavity of the hollow plate-shaped structure, the temperature detection device 4 is arranged on the object stage 2, the structural member 20 to be detected can be heated, and the heating temperature of the structural member 20 to be detected is detected in real time, so that the temperature rise of the structural member 20 to be detected can be simulated due to the irradiation of extreme ultraviolet light in the extreme ultraviolet exposure, and the reflectivity stability is poor due to the influence of the temperature on the performance (such as aberration) of the multilayer film of the reflecting mirror, therefore, the heating temperature of the structural member 20 to be detected is output through the control device, the relationship between the temperature and the performance (such as aberration) of the multilayer film of the reflecting mirror can be researched by researchers, and the basic scientific research on the improvement of the reflectivity stability can be simulated by the environment of the extreme ultraviolet exposure.
In addition, in the vacuum environment, the temperature control is different, so in the vacuum equipment provided by the application, the heating device 3 is used for heating the structural member 20 to be tested in the vacuum environment, the temperature detection device 4 is used for detecting the heating temperature of the structural member 20 to be tested, and the performance (such as aberration) change of the reflecting mirror multilayer film caused by the temperature change in the vacuum environment can be studied, so that the exposure condition of extreme ultraviolet light can be studied on a basic basis.
In order to detect the vacuum degree in the vacuum chamber 1, in some embodiments, a second vacuum gauge is further disposed on the housing of the vacuum chamber 1, and the second vacuum gauge is electrically connected to the control device 5, and the control device 5 is configured to obtain a second vacuum degree detected by the second vacuum gauge and output the second vacuum degree.
By adopting the second vacuum gauge, the vacuum degree in the vacuum cavity 1 can be detected, so that a researcher can conveniently obtain the vacuum degree in the vacuum cavity 1 outside the vacuum cavity 1.
As shown in fig. 1 and 2, the housing 11 of the vacuum chamber 1 is provided with an opening M for mounting a second vacuum gauge.
In some embodiments, the vacuum apparatus 10 further comprises: the device comprises a plurality of spring clamps arranged on an object stage 2, wherein one end of each spring clamp is fixed on the object stage 2, and the other end of each spring clamp is used for pressing down on the surface of the structure 20 to be tested, which is close to the edge, so as to fix the structure 20 to be tested.
In these embodiments, the fixation stability of the structure 20 to be tested can be improved.
Wherein one end of the spring clip may be fixed to the stage 2 by gluing or by welding.
In some embodiments, as shown in fig. 1, the vacuum apparatus 10 further comprises: a hollow annular member 7 and a gas supply means; the hollow annular member 7 surrounds the structural member 3 to be tested, and a gas inlet 71 communicated with the gas supply device and a gas outlet 72 for sweeping gas of the structural member 20 to be tested are arranged on the hollow cavity of the hollow annular member 7;
the gas outlet of the gas supply device is provided with a valve, and the control device 5 is electrically connected with the valve and is used for controlling the gas supply device to output gas or stopping outputting gas.
In these embodiments, by providing the hollow annular member 7, in the heating process, the gas may be introduced into the gas inlet of the hollow annular member 7 through the gas providing device, so that the gas may be used to blow the structural member 20 to be tested, thereby reducing the temperature of the structural member 20 to be tested, and further, more precisely controlling the temperature of the structural member 20 to be tested.
The added gas can also be used for researching the performance of the multilayer film of the reflecting mirror, and the contamination on the surface of the multilayer film is removed through the reaction of the gas and the multilayer film, so that the reflectivity of the optical element is improved.
In addition, since the flow of gas molecules and the temperature control are different in the vacuum environment, the flow of gas molecules, the temperature change and the like in the vacuum environment can be studied, the exposure environment can be further studied, and the exposure reliability in the vacuum environment can be improved.
In some embodiments, as shown in fig. 1 and 2, the vacuum apparatus 10 further comprises: the control device 5 is also electrically connected with the lifting device and the first vacuum gauge 9;
wherein, the first vacuum gauge 9 is arranged at the gas outlet 72 of the hollow annular member 7, and the control device 5 is used for acquiring the first vacuum degree detected by the first vacuum gauge and outputting the first vacuum degree;
the lifting device is connected with the heat shield 8, and is used for driving the heat shield 8 to ascend or descend under the control of the control device 5 so as to control the heat shield 8 to expose the structural member 20 to be tested and the hollow annular member 7 in the vacuum cavity 1 or control the heat shield 8 to cover the structural member 20 to be tested and the hollow annular member 7.
In these embodiments, by providing the heat shield 8, the heat shield 8 is capable of insulating the hollow annular member 7 and the structural member 20 to be tested, so that the heating speed of the structural member 3 to be tested can be increased, and rapid temperature rise can be achieved; under heating, the gas molecules in the hollow cavity of the hollow annular member 7 are more easily pumped away, and the air pressure is increased, so that the vacuum value in the heat shield 8 is lower than the vacuum value in the whole vacuum cavity 1, and the vacuum value in the heat shield 8 can be detected in real time by adopting the first vacuum gauge 9 by arranging the first vacuum gauge 9, thereby further researching temperature control, gas molecule flow and the like in the vacuum environment.
In addition, in the heating process, the gas is introduced into the gas inlet of the hollow annular member 7 through the gas supply device, and the structural member 20 to be measured is blown by the gas, so that the structural member 20 to be measured can be cooled, and the temperature can be further controlled.
In some embodiments, as shown in fig. 1, the vacuum apparatus 10 further comprises: the condensing device is arranged in the hollow cavity of the hollow platy structure and is used for condensing the structural member 20 to be detected.
In these embodiments, by providing the condensing device, the structural member 20 to be tested can be cooled, so that rapid cooling of the structural member 20 to be tested is achieved.
In addition, the vacuum apparatus 10 may further include a PID temperature controller electrically connected to the control switch of the heating device 3, the control switch of the condensing device, and the control device 5, respectively, for controlling the heating device 3 or the condensing device to achieve accurate temperature control according to the temperature set by the control device 5.
And the object stage 2 may be provided with an object placing groove, and the temperature detecting device 4 may be placed in the object placing groove to detect the temperature of the structural member to be detected.
In some embodiments, an infrared heating device is also disposed within the heat shield 8.
The infrared heating device can heat the structural member 20 to be tested, and further control the temperature of the structural member 20 to be tested.
In some embodiments, the infrared heating device is an infrared heating tube that surrounds the inner wall of the heat shield 8.
In these embodiments, the structural member 20 to be tested can be heated uniformly.
The material of the heat shield 8 may comprise a heat resistant inert material, among other things.
In some embodiments, the materials of the heat shield 8 include: ceramic materials or other heat resistant inert materials, etc.
In some embodiments, the hollow annular member 7 is one.
In these embodiments, the structure 20 may be a wafer or an optical element, so that the hollow ring-shaped member 7 may be placed around the wafer or the optical element, respectively, to simulate the performance change of the multilayer film of the reflector caused by the temperature of the wafer and the optical element, respectively, so as to study the relationship between the temperature and the performance of the multilayer film of the reflector.
In some embodiments, as shown in fig. 3 and fig. 4, the number of hollow annular members 7 is two, and the positions of the two hollow annular members 7 and the positions of the two structural members 20 to be tested are in one-to-one correspondence, so as to form two groups of components respectively comprising one hollow annular member 7, and the two groups of components are arranged side by side on the stage 2;
as shown in fig. 1, 2, 3 and 4, the vacuum apparatus 10 further includes: a first opening V formed in the housing 11 of the vacuum chamber 1, the first opening V being used for connecting an electron beam generating device for generating an electron beam, the electron beam being used as a radiation beam to irradiate the surface of the structural member 20 to be measured, or a transparent window being provided at the first opening for allowing a laser beam to pass therethrough and irradiating the surface of the structural member 20 to be measured with the laser beam as the radiation beam, the wavelength of the laser beam comprising: 193nm and/or 248nm;
and, the vacuum apparatus further comprises: a first connection port 12 provided in the housing 11 of the vacuum chamber 1 for connection with a secondary electron probe; the secondary electron probe is used for detecting the yield of secondary electrons in the vacuum chamber 1.
In the exposure process, as the wafer coated with the photoresist continuously enters and exits the photoetching machine, hydrocarbon caused by the decomposition of the photoresist can permeate into the vacuum cavity 1 and then be adsorbed on the optical element and the wafer, secondary electrons can be generated as extreme ultraviolet light is incident on the objects, the secondary electrons can cause the molecular chains of hydrocarbon organic matters adsorbed on the surface to be broken, a carbon film is formed, the carbon film has strong absorptivity to the extreme ultraviolet light, and the reflection efficiency of the reflecting mirror is greatly reduced. Similar to hydrocarbon, water molecules in the exposure process are absorbed by the surface of the reflecting film, and the water molecules are decomposed into oxygen ions and hydrogen ions under the irradiation of extreme ultraviolet light, so that surface oxidation and hydrogen ion diffusion are caused, and the data show that a 0.3nm surface oxide layer can cause 1% reflectivity loss, hydrogen ions are easy to diffuse into the reflecting film to generate bubbles, and the reflecting mirror can be damaged under severe conditions.
Based on this, in these embodiments, by providing two hollow ring members 7, one of the two hollow ring members 7 may be provided around the wafer coated with the photoresist, and the other may be provided around the optical element, so that hydrocarbon and water molecules that may occur under the irradiation of extreme ultraviolet light in the vacuum environment of the wafer and the optical element may be simulated on the surface of the optical element, so that the exposure environment may be simulated, while by providing a secondary electron probe, the yield of secondary electrons in the vacuum chamber may be detected by using the secondary electron probe, so that the relationship between the secondary electrons and the molecular chain breakage of the hydrocarbon may be studied, so that the basic study of the molecular chain breakage of the secondary electrons and the hydrocarbon may be performed, and conditions for the subsequent study of the exposure environment with higher reflectivity may be created.
In addition, in the extreme ultraviolet exposure system, since the mask plate, the reflecting plate and other optical elements adopt high-performance Mo/Si multilayer film structures, the multilayer film elements need to have service lives of 3 ten thousand hours in the actual exposure system, and the change of the reflectivity needs to be controlled within 2 percent, so that the productivity of the photoetching machine can be ensured. While a diffusion boundary layer is always present between the Mo layer and the Si layer during the growth of the multilayer film. This is because lattice structure defects exist at the interface, resulting in the interdiffusion and bonding of atoms to form new chemical bonds. When the thickness of the diffusion interface layer is greater than one-fourth wavelength of the period of the multilayer film, the abrupt interface is blurred, the refractive index difference becomes small, atoms are compacted to cause the period thickness to become small, and finally the reflectivity is sharply reduced. Meanwhile, the wavelength of the maximum reflectivity of the multilayer film optical element is changed due to the existence of the diffusion interface layer, so that the problem of poor reflectivity stability is caused.
In addition, smooth surfaces and interfaces are the characteristics that optical elements must possess, and therefore the roughness root mean square RMS of surfaces and interfaces is required to be below 0.1 nm. The rough surface and interface can cause scattering of light, and the thickness of the film is uneven, the phase of reflected light can not realize interference constructive, the loss of light and the reduction of reflectivity are caused, and the problem of poor reflectivity stability is also caused.
Based on this, in these embodiments, the energy of the electron beam is close to the energy of the extreme ultraviolet light, and the extreme ultraviolet light can be simulated. The photon energy of the laser beam with 193nm and/or 248nm is higher, about 5eV, and can replace the photon of the high-energy extreme ultraviolet light. The structural member 20 to be measured can be an optical element, and the surface of the structural member 20 to be measured is irradiated by radiation beams, so that the reflectivity problem of the optical element under the irradiation of different radiation beams can be simulated, and the basic research on improving the reflectivity stability can be performed.
In some embodiments, as shown in fig. 1 to 4, the material of the transparent window includes: quartz material.
In these embodiments, the transparent window is transparent: laser beams of 193nm and/or 248nm wavelength, in turn, can withstand high pressures.
In some embodiments, the bottom connecting piece 6 is rotatably connected to the bottom of the vacuum chamber 1, and is used for driving the two structural members 20 to be tested to a first position, and the first position is opposite to the first opening V;
when the first position is opposite to the first opening V, the radiation beam can vertically irradiate onto the surface of the structural member 20 to be measured through the first opening V or the transparent window.
In these embodiments, by rotatably connecting the bottom connecting member 6 with the bottom of the vacuum chamber 1, it is possible to move the two structural members 20 to be tested, and it is possible to perform a simulation study on both the structural members 20 to be tested under the irradiation of extreme ultraviolet light.
In some embodiments, as shown in fig. 1-4, the vacuum apparatus 10 further comprises: a second connection port 13 for communicating with a sample inlet of the thermal analyzer is provided on the housing 11 of the vacuum chamber 1.
In these embodiments, by providing a thermal analyzer, the composition of the substance in the vacuum chamber 1 can be analyzed, so that the accuracy of the study of the experimental environment can be improved.
The respective control modules in the control device 5 described above may be implemented in whole or in part by software, hardware, and combinations thereof. The above control modules may be embedded in hardware or may be stored in a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above control modules, for example, the processor may obtain a temperature detected by the temperature detecting device, and adjust a heating temperature of the heating device according to the temperature detected by the temperature detecting device, so as to adjust a heating temperature of the structural member 20 to be tested.
In one embodiment, a computer device is provided, which may be a terminal, and the internal structure of which may be as shown in fig. 5. The computer device includes a processor, a memory, a communication interface, a display unit, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless mode can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program, when executed by a processor, implements the control method of the control device described above. The display unit of the computer equipment can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, can also be a key, a track ball or a touch pad arranged on the shell of the computer equipment, and can also be an external keyboard, a touch pad or a mouse and the like.
It will be appreciated by those skilled in the art that the structure shown in FIG. 5 is merely a block diagram of some of the structures associated with the present inventive arrangements and is not limiting of the computer device to which the present inventive arrangements may be applied, and that a particular computer device may include more or fewer components than shown, or may combine some of the components, or have a different arrangement of components.
In an embodiment, a computer device is also provided, comprising a memory and a processor, the memory storing a computer program, the processor implementing the steps performed by the control means 5 described above when the computer program is executed.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims (10)

1. A vacuum apparatus for simulating an exposure environment of an euv lithography machine, comprising:
a vacuum chamber;
the objective table is of a hollow platy structure; the hollow platy structure is fixed in the vacuum cavity through the bottom connecting piece, the objective table is used for placing the structure spare that awaits measuring, the material of hollow platy structure includes: a thermally conductive material;
the heating device is arranged in the hollow cavity of the hollow platy structure and is used for heating the structural member to be tested;
the temperature detection device is arranged on the objective table and is used for detecting the heating temperature of the structural member to be detected;
the control device is arranged outside the vacuum cavity, is electrically connected with the heating device and the temperature detection device, and is used for controlling the opening, closing and heating temperatures of the heating device, acquiring the temperature detected by the temperature detection device and outputting the temperature detected by the temperature detection device.
2. The vacuum apparatus for simulating an exposure environment of an EUV lithography machine of claim 1, wherein,
the vacuum apparatus further comprises: a hollow annular member and a gas supply device; the hollow annular member is used for encircling the periphery of the structural member to be tested, and a gas inlet communicated with the gas supply device and a gas outlet used for sweeping gas towards the structural member to be tested are arranged on the hollow cavity of the hollow annular member;
the gas outlet of the gas supply device is provided with a valve, and the control device is electrically connected with the valve and is used for controlling the gas supply device to output gas or stopping outputting gas;
and/or the number of the groups of groups,
the vacuum apparatus further comprises: and the condensing device is arranged in the hollow cavity of the hollow platy structure and is used for condensing the structural member to be detected.
3. The vacuum apparatus for simulating an exposure environment of an euv lithography machine of claim 2, further comprising: the control device is also electrically connected with the lifting device and the first vacuum gauge;
the control device is used for acquiring a first vacuum degree detected by the first vacuum gauge and outputting the first vacuum degree;
the lifting device is connected with the heat shield, and is used for driving the heat shield to ascend or descend under the control of the control device so as to control the heat shield to expose the structural member to be tested and the hollow annular member into a vacuum cavity or control the heat shield to cover the structural member to be tested and the hollow annular member;
and/or the number of the groups of groups,
the shell of the vacuum cavity is further provided with a second vacuum gauge, the second vacuum gauge is electrically connected with the control device, and the control device is used for acquiring the second vacuum degree detected by the second vacuum gauge and outputting the second vacuum degree.
4. The vacuum apparatus for simulating an exposure environment of an EUV lithography machine as claimed in claim 3, wherein,
an infrared heating device is also arranged in the heat shield;
optionally, the infrared heating device is an infrared heating tube encircling the inner wall of the heat shield.
5. The vacuum apparatus for simulating an exposure environment of an EUV lithography machine as claimed in claim 3, wherein,
the material of the heat shield comprises: a ceramic material.
6. The vacuum apparatus for simulating an exposure environment of an EUV lithography machine of claim 1, wherein,
the hollow annular member and the objective table are of an integrated structure;
and/or the number of the groups of groups,
the vacuum apparatus further comprises: the device comprises an object stage, a plurality of spring clamps, a plurality of fixing plates and a plurality of fixing plates, wherein the plurality of spring clamps are arranged on the object stage, one end of each spring clamp is fixed on the object stage, and the other end of each spring clamp is used for pressing down on the surface, close to the edge, of the structure to be tested.
7. The vacuum apparatus for simulating an exposure environment of an EUV lithography machine according to any one of claims 2-6, wherein,
the number of the hollow annular members is two, the positions of the two hollow annular members are in one-to-one correspondence with the positions of the two structural members to be tested, two groups of components respectively comprising one hollow annular member are formed, and the two groups of components are arranged on the objective table side by side;
the vacuum apparatus further comprises: the first opening is arranged on the shell of the vacuum cavity and is used for being connected with an electron beam generating device, the electron beam generating device is used for generating electron beams, and the electron beams are used as radiation beams to irradiate the surface of the structural member to be detected; or, a transparent window is installed at the first opening, the transparent window is used for allowing a laser beam to penetrate, the laser beam is used as a radiation beam to irradiate the surface of the structural member to be detected, and the wavelength of the laser beam comprises: 193nm and/or 248nm;
and, the vacuum apparatus further comprises: a first connection port which is arranged on the shell of the vacuum cavity and is used for being connected with a secondary electron probe; the secondary electron probe is used for detecting the yield of secondary electrons in the vacuum cavity.
8. The vacuum apparatus for simulating an exposure environment of an EUV lithography machine of claim 7, wherein,
the bottom connecting piece is rotatably connected with the bottom of the vacuum cavity and is used for driving the two structural members to be tested to a first position, and the first position is opposite to the first opening;
when the first position is opposite to the first opening, the radiation beam can vertically irradiate onto the surface of the structural member to be tested through the first opening or the transparent window.
9. The vacuum apparatus for simulating an exposure environment of an EUV lithography machine of claim 7, wherein,
the transparent window material comprises: quartz material.
10. The vacuum apparatus for simulating an exposure environment of an EUV lithography machine of claim 7, wherein,
the vacuum apparatus further comprises: and a second connecting port which is arranged on the shell of the vacuum cavity and is used for being connected with a sample inlet of the thermal analyzer.
CN202310449121.3A 2023-04-24 2023-04-24 Vacuum equipment for simulating exposure environment of extreme ultraviolet lithography machine Pending CN116718359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310449121.3A CN116718359A (en) 2023-04-24 2023-04-24 Vacuum equipment for simulating exposure environment of extreme ultraviolet lithography machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310449121.3A CN116718359A (en) 2023-04-24 2023-04-24 Vacuum equipment for simulating exposure environment of extreme ultraviolet lithography machine

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CN116718359A true CN116718359A (en) 2023-09-08

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