CN116706860A - Battery pack and breakdown-preventing circuit thereof - Google Patents

Battery pack and breakdown-preventing circuit thereof Download PDF

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Publication number
CN116706860A
CN116706860A CN202310542120.3A CN202310542120A CN116706860A CN 116706860 A CN116706860 A CN 116706860A CN 202310542120 A CN202310542120 A CN 202310542120A CN 116706860 A CN116706860 A CN 116706860A
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CN
China
Prior art keywords
resistor
semiconductor switch
battery pack
electrically connected
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310542120.3A
Other languages
Chinese (zh)
Inventor
赵恩海
沈晋成
刘昌�
施康
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Zhirong Microelectronics Co ltd
Original Assignee
Hangzhou Zhirong Microelectronics Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Zhirong Microelectronics Co ltd filed Critical Hangzhou Zhirong Microelectronics Co ltd
Priority to CN202310542120.3A priority Critical patent/CN116706860A/en
Publication of CN116706860A publication Critical patent/CN116706860A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M10/4257—Smart batteries, e.g. electronic circuits inside the housing of the cells or batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0047—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with monitoring or indicating devices or circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M2010/4271—Battery management systems including electronic circuits, e.g. control of current or voltage to keep battery in healthy state, cell balancing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M2010/4278—Systems for data transfer from batteries, e.g. transfer of battery parameters to a controller, data transferred between battery controller and main controller
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Battery Mounting, Suspending (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

The application discloses a battery pack and a breakdown preventing circuit thereof, wherein the battery pack comprises: a charge-discharge circuit for charging or discharging; the battery cell unit is used for storing electric energy; the switch end of the semiconductor switch is electrically connected with the charge-discharge circuit and the battery cell unit respectively; the singlechip is used for sending a control signal to the control end of the semiconductor switch; the two ends of the first resistor are respectively and electrically connected to the control ends of the singlechip and the semiconductor switch; the two ends of the second resistor are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end; the positive electrode and the negative electrode of the voltage stabilizing tube are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end; the ratio of the resistance value of the second resistor to the resistance value of the first resistor ranges from 90 to 150. The application has the advantages of providing the battery pack capable of effectively preventing the semiconductor switch from being broken down by higher voltage and the breakdown preventing circuit thereof.

Description

Battery pack and breakdown-preventing circuit thereof
Technical Field
The application relates to the technical field of battery pack control, in particular to a battery pack and an anti-breakdown circuit thereof.
Background
Often there are multiple groups of cells in the battery pack, which may be made up of one or more cells. In daily use of the battery pack, the BMS device of the battery pack performs charge and discharge control through the respective semiconductor switches.
As the voltage of the battery pack is higher and higher, the semiconductor switches used by the battery pack are more and more, and as the use scene is more and more severe, the semiconductor switches are easy to fail due to breakdown and the like. The existing battery pack does not provide anti-breakdown protection for the semiconductor switch.
Disclosure of Invention
The summary of the application is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. The summary of the application is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.
Some embodiments of the present application provide a battery pack and a breakdown preventing circuit thereof, which solve the technical problems mentioned in the background section above.
As a first aspect of the present application, some embodiments of the present application provide a breakdown preventing circuit for preventing a semiconductor switch from being broken down; the breakdown preventing circuit includes: one end of the first resistor is electrically connected to the control end of the semiconductor switch; the two ends of the second resistor are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end; the positive electrode and the negative electrode of the voltage stabilizing tube are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end; the value range of the ratio of the resistance value of the second resistor to the resistance value of the first resistor is 90-150; the stable voltage of the voltage stabilizing tube is in the range of 12V to 24V.
Further, the breakdown preventing circuit further includes: the negative electrode of the diode is electrically connected to the other end of the first resistor.
Further, the resistance value of the first resistor ranges from 6 kilo ohms to 12 kilo ohms.
Further, the resistance value of the second resistor ranges from 0.8 megaohm to 1.2 megaohm.
Further, the regulated voltage of the regulator tube is 18V.
As a second aspect of the present application, some embodiments of the present application provide a battery pack including: a charge-discharge circuit for charging or discharging; the battery cell unit is used for storing electric energy; the switch end of the semiconductor switch is electrically connected with the charge-discharge circuit and the battery cell unit respectively; the singlechip is used for sending a control signal to the control end of the semiconductor switch; the two ends of the first resistor are respectively and electrically connected to the control ends of the singlechip and the semiconductor switch; the two ends of the second resistor are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end; the positive electrode and the negative electrode of the voltage stabilizing tube are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end; the value range of the ratio of the resistance value of the second resistor to the resistance value of the first resistor is 90-150; the stable voltage of the voltage stabilizing tube is in the range of 12V to 24V.
Further, the battery pack further includes: and the anode and the cathode of the diode are respectively and electrically connected to the singlechip and the first resistor.
Further, the resistance value of the first resistor ranges from 6 kilo ohms to 12 kilo ohms.
Further, the resistance value of the second resistor ranges from 0.8 megaohm to 1.2 megaohm.
Further, the regulated voltage of the regulator tube is 18V.
Further, the semiconductor switch is a MOS tube switch; the resistance value of the first resistor is 10 kiloohms; the resistance value of the second resistor is 1 megaohm.
The application has the beneficial effects that: provided are a battery pack capable of effectively preventing a semiconductor switch from being broken down by a high voltage, and a breakdown preventing circuit thereof.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application, are incorporated in and constitute a part of this specification. The drawings and their description are illustrative of the application and are not to be construed as unduly limiting the application.
In addition, the same or similar reference numerals denote the same or similar elements throughout the drawings. It should be understood that the figures are schematic and that elements and components are not necessarily drawn to scale.
In the drawings:
FIG. 1 is a schematic diagram of a portion of a circuit in a battery pack according to one embodiment of the application;
fig. 2 is a schematic diagram of a portion of a circuit in a battery pack according to another embodiment of the application.
Detailed Description
Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete. It should be understood that the drawings and embodiments of the present disclosure are for illustration purposes only and are not intended to limit the scope of the present disclosure.
It should be noted that, for convenience of description, only the portions related to the present application are shown in the drawings. Embodiments of the present disclosure and features of embodiments may be combined with each other without conflict.
It should be noted that the terms "first," "second," and the like in this disclosure are merely used to distinguish between different devices, modules, or units and are not used to define an order or interdependence of functions performed by the devices, modules, or units.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those of ordinary skill in the art will appreciate that "one or more" is intended to be understood as "one or more" unless the context clearly indicates otherwise.
The names of messages or information interacted between the various devices in the embodiments of the present disclosure are for illustrative purposes only and are not intended to limit the scope of such messages or information.
The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Referring to fig. 1, a battery pack of the present application includes: the battery comprises a charging and discharging circuit, a battery cell unit, a semiconductor switch and a master control singlechip.
The charging and discharging circuit is used for charging or discharging; the battery cell unit is used for storing electric energy; the switch end of the semiconductor switch is respectively electrically connected with the charge-discharge circuit and the battery cell unit; the singlechip is used for sending a control signal to a control end of the semiconductor switch.
More specifically, the master control singlechip sends a control signal to the control end of the semiconductor switch so as to turn on or off the semiconductor switch.
The problem of failure of the semiconductor switch is easily caused by breakdown of the control terminal and the switching terminal as the negative electrode when a high voltage is instantaneously applied to the semiconductor switch. For example, when the semiconductor switch is a MOS transistor switch, an excessively high control voltage easily causes breakdown of the gate and the source.
As shown in fig. 1, the battery pack of the present application has a second resistor R2 connected in parallel between the control terminal of the semiconductor switch Q1 and the switch terminal as the negative electrode, and the second resistor R2 has a higher resistance value to effectively divide voltage. As a further scheme, the battery pack is further connected in parallel with a voltage stabilizing tube ZG between the control end of the semiconductor switch Q1 and the switch end serving as the negative electrode, the positive electrode of the voltage stabilizing tube ZG is electrically connected to the control end of the semiconductor switch Q1, and the negative electrode of the voltage stabilizing tube ZG is electrically connected to the switch end serving as the negative electrode of the semiconductor switch Q1.
Further, as shown in fig. 1, when the semiconductor switch Q1 is a MOS transistor switch, two ends of the second resistor R2 are respectively connected to the gate G and the source S of the MOS transistor switch; the positive electrode of the voltage stabilizing tube ZG is electrically connected to the grid electrode G of the MOS tube switch; the negative electrode of the voltage stabilizing tube ZG is electrically connected to the source electrode S of the MOS tube switch.
In order to enable the voltage signal transmitted to the control end of the semiconductor switch Q1 by the master control singlechip to be stable, a diode Z1 and a first resistor R1 are sequentially connected between the master control singlechip and the control end of the semiconductor switch Q1. As a preferred scheme, when the semiconductor switch Q1 is a MOS tube switch, a diode Z1 and a first resistor R1 are sequentially connected between the master control singlechip and a grid G of the MOS tube switch; the grid electrode and the drain electrode D of the MOS tube switch are electrically connected to the charge-discharge circuit.
Therefore, even if the voltage signal of the master control singlechip has instantaneous high voltage, the voltage signal is shared by the high voltage through the first resistor R1, the second resistor R2 and the voltage stabilizing tube ZG, so that the direct impact of the instantaneous high voltage on the semiconductor switch Q1 is reduced.
As a specific scheme, the value range of the ratio of the resistance value of the second resistor R2 to the resistance value of the first resistor R1 is 90 to 150; more specifically 95 to 105, preferably a value of 100.
As a specific scheme, the value range of the resistance value of the first resistor R1 is 6 kilohms to 12 kilohms; preferably, the resistance value of the first resistor R1 is 10 kilo ohms.
As a specific scheme, the resistance value of the second resistor R2 ranges from 0.8 megaohm to 1.2 megaohm; preferably, the resistance value of the second resistor R2 is 1 megaohm.
Specifically, the stable voltage of the regulator tube ZG has a value ranging from 12V to 24V, preferably 18V.
As shown in fig. 2, in order to enable the battery pack to detect the failed semiconductor switch when the semiconductor switch is failed by impact, the safety risk of the battery pack in charge and discharge is reduced.
Specifically, the battery pack has a plurality of correspondingly arranged battery cells (not shown in the figure) and semiconductor switches Q1, Q2, Q3, Q4. Therefore, the battery pack needs to judge the validity of all the semiconductor switches Q1, Q2, Q3 and Q4 to ensure the normal charge and discharge of the battery pack. Each semiconductor switch Q1, Q2, Q3, Q4 is electrically connected to the voltage dividing resistor R2 and the sampling resistor R3 through the shunt resistors R11, R12, R13, R14, respectively. The other end of the voltage dividing resistor R2 is grounded. The sampling resistor R3 is electrically connected to the detection singlechip through a diode Z2; meanwhile, the sampling resistor R3 is electrically connected to the positive electrode of the capacitor C1, and the negative electrode of the capacitor C1 is grounded.
When the semiconductor switches Q1, Q2, Q3 and Q4 are normal, the voltages at the control ends of the semiconductor switches Q1, Q2, Q3 and Q4 are about 12V; when the semiconductor switches Q1, Q2, Q3, Q4 fail, the voltage at the control terminals of the semiconductor switches Q1, Q2, Q3, Q4 is pulled down to less than 8V. The detection singlechip can know whether the semiconductor switches Q1, Q2, Q3 and Q4 fail or not according to the collected voltage signals. If the charging and discharging operation is not failed, normal charging and discharging operation is continued, and if the charging and discharging operation is failed, system alarming is carried out and normal charging control is stopped.
As a specific scheme, the resistance value of the shunt resistor R1 is larger than that of the voltage dividing resistor R2, and the ratio of the resistance values is in the range of 4 to 6. More specifically, the resistance value of the shunt resistor R1 ranges from 4 megaohms to 6 megaohms.
As a specific scheme, the resistance value of the sampling resistor R3 is far smaller than the resistance values of the shunt resistor R1 and the voltage dividing resistor R2, specifically, the ratio of the resistance value of the shunt resistor R1 to the resistance value of the sampling resistor R3 ranges from 4000 to 6000, and as a preferable scheme, the resistance value of the sampling resistor R3 is 1000 ohms.
In general, the battery pack transmits a control signal to the semiconductor switches Q1, Q2, Q3, Q4 to turn them on only when charging and discharging, but if the semiconductor switches Q1, Q2, Q3, Q4 are in a disabled state when charging or discharging, a safety hazard is caused to the whole battery pack, if the main control program of the battery pack is first executed for a while before each charging or discharging, and then the main program of the battery pack is selected to be continued or terminated according to the result of the validity detection, which definitely causes waste of the power consumption of the battery pack, because neither the charging program nor the discharging program is simply turned on or off in the main control program of the battery pack, but the duty ratio of the conduction of the semiconductor switches Q1, Q2, Q3, Q4 needs to be set according to the voltage of the battery cell or the like, so that not only the power consumption is increased, but a stable validity detection signal cannot be obtained, and false alarm or a failure detection situation occurs.
As a further scheme, a triggering single-chip microcomputer is further arranged in the battery pack shown in fig. 2, and the triggering single-chip microcomputer and the detecting single-chip microcomputer are electrically connected so that the triggering single-chip microcomputer and the detecting single-chip microcomputer can be used for communication signals in an interactive mode. The trigger singlechip is electrically connected to the semiconductor switches Q1, Q2, Q3 and Q4 through the diode Z3 respectively.
After detecting the change of the voltage signal brought by the charging and discharging circuit connected to the charger or the electricity load, the detecting singlechip firstly does not send a trigger signal to a main control singlechip (not shown in the figure) responsible for the charging and discharging program in the battery pack, but firstly detects the voltage signal acquired by the detecting circuit, and acquires the voltage value of the voltage signal, and at the moment, the detecting singlechip judges that the current semiconductor switch Q1 is in an idle state because the control end of the semiconductor switch Q1 has no voltage.
Then, the detecting singlechip sends a trigger signal to the triggering singlechip, the triggering singlechip sends a square wave signal for enabling the semiconductor switch Q1 to be turned on briefly to the control end of the semiconductor switch Q1, meanwhile, the detecting singlechip detects the voltage value of the voltage signal again, and if the semiconductor switch Q1 fails, the voltage value of the voltage signal detected by the detecting singlechip again is different from the voltage value of the voltage signal collected under the normal state of the semiconductor switch Q1. If the detection effectiveness is passed, the detection singlechip can send a program triggering normal charge and discharge to the master control singlechip in the BMS device, so that the whole program judgment time and energy consumption can be greatly solved. As a preferred scheme, the triggering singlechip can be a master control singlechip of a program responsible for charging and discharging in the battery pack, and the difference is that a section of program for detecting effectiveness is additionally arranged in the master control singlechip besides the program of charging and discharging.
As a preferred scheme, the detection singlechip and the triggering singlechip can be compatible as a singlechip, and the singlechip can be used as a master control singlechip.
The shunt resistors R11, R12, R13 and R14 can have different resistance values, and when the singlechip is triggered to directly apply voltage signals to the control end switches of the semiconductors, the voltage values detected by the detection singlechip are different when the different semiconductor switches fail, so that the detection singlechip can help the system to fail according to specific data of the voltage values.
The foregoing description is only of the preferred embodiments of the present disclosure and description of the principles of the technology being employed. It will be appreciated by those skilled in the art that the scope of the application in the embodiments of the present disclosure is not limited to the specific combination of the above technical features, but encompasses other technical features formed by any combination of the above technical features or their equivalents without departing from the spirit of the application. Such as the above-described features, are mutually substituted with (but not limited to) the features having similar functions disclosed in the embodiments of the present disclosure.

Claims (11)

1. An anti-breakdown circuit for preventing a semiconductor switch from being broken down;
the method is characterized in that: the breakdown preventing circuit includes:
one end of the first resistor is electrically connected to the control end of the semiconductor switch;
the two ends of the second resistor are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end;
the positive electrode and the negative electrode of the voltage stabilizing tube are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end;
wherein the value range of the ratio of the resistance value of the second resistor to the resistance value of the first resistor is 90 to 150; the stable voltage of the voltage stabilizing tube has a value range of 12V to 24V.
2. The breakdown preventing circuit of claim 1, wherein:
the breakdown preventing circuit further includes:
and the negative electrode of the diode is electrically connected to the other end of the first resistor.
3. The breakdown preventing circuit of claim 2, wherein:
the resistance value of the first resistor ranges from 6 kiloohms to 12 kiloohms.
4. A breakdown preventing circuit according to claim 3, wherein:
the resistance value of the second resistor ranges from 0.8 megaohm to 1.2 megaohm.
5. The breakdown preventing circuit of claim 4, wherein:
the stabilizing voltage of the voltage stabilizing tube is 18V.
6. A battery pack, comprising:
a charge-discharge circuit for charging or discharging;
the battery cell unit is used for storing electric energy;
the switch end of the semiconductor switch is electrically connected with the charge and discharge circuit and the battery cell unit respectively;
the singlechip is used for sending a control signal to the control end of the semiconductor switch;
the method is characterized in that:
the breakdown preventing circuit further includes:
the two ends of the first resistor are respectively and electrically connected to the control ends of the singlechip and the semiconductor switch;
the two ends of the second resistor are respectively and electrically connected to the control end of the semiconductor switch and the negative electrode in the switch end;
the positive electrode and the negative electrode of the voltage stabilizing tube are respectively and electrically connected to the negative electrode in the control end and the switch end of the semiconductor switch;
wherein the value range of the ratio of the resistance value of the second resistor to the resistance value of the first resistor is 90 to 150; the stable voltage of the voltage stabilizing tube has a value range of 12V to 24V.
7. The battery pack according to claim 5, wherein:
the battery pack further includes:
and the anode and the cathode of the diode are respectively and electrically connected to the singlechip and the first resistor.
8. The battery pack according to claim 6, wherein:
the resistance value of the first resistor ranges from 6 kiloohms to 12 kiloohms.
9. The battery pack according to claim 7, wherein:
the resistance value of the second resistor ranges from 0.8 megaohm to 1.2 megaohm.
10. The battery pack of claim 8, wherein:
the stabilizing voltage of the voltage stabilizing tube is 18V.
11. The battery pack according to claim 9, wherein:
the semiconductor switch is a MOS tube switch; the resistance value of the first resistor is 10 kiloohms; the resistance value of the second resistor is 1 megaohm.
CN202310542120.3A 2023-05-15 2023-05-15 Battery pack and breakdown-preventing circuit thereof Pending CN116706860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310542120.3A CN116706860A (en) 2023-05-15 2023-05-15 Battery pack and breakdown-preventing circuit thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310542120.3A CN116706860A (en) 2023-05-15 2023-05-15 Battery pack and breakdown-preventing circuit thereof

Publications (1)

Publication Number Publication Date
CN116706860A true CN116706860A (en) 2023-09-05

Family

ID=87836469

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310542120.3A Pending CN116706860A (en) 2023-05-15 2023-05-15 Battery pack and breakdown-preventing circuit thereof

Country Status (1)

Country Link
CN (1) CN116706860A (en)

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