CN116706561A - Wide-angle, high-selectivity and zero-point-controllable frequency selection structure - Google Patents

Wide-angle, high-selectivity and zero-point-controllable frequency selection structure Download PDF

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Publication number
CN116706561A
CN116706561A CN202310804936.9A CN202310804936A CN116706561A CN 116706561 A CN116706561 A CN 116706561A CN 202310804936 A CN202310804936 A CN 202310804936A CN 116706561 A CN116706561 A CN 116706561A
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Prior art keywords
square ring
bending
square
metal layer
slit
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CN202310804936.9A
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Chinese (zh)
Inventor
张天乐
王建朋
朱佳敏
王小军
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Shanghai Aerospace Electronics Co ltd
Nanjing University of Science and Technology
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Shanghai Aerospace Electronics Co ltd
Nanjing University of Science and Technology
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Priority to CN202310804936.9A priority Critical patent/CN116706561A/en
Publication of CN116706561A publication Critical patent/CN116706561A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/0046—Theoretical analysis and design methods of such selective devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The application discloses a wide-angle, high-selectivity and zero-point-controllable frequency selective structure, wherein each frequency selective surface structure unit of the structure comprises a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer which are sequentially bonded from top to bottom; the first metal layer, the second metal layer and the third metal layer are identical in structure size. The first metal layer comprises a first square patch, a first bending gap square ring and a second bending gap square ring are etched on the first square patch, and the two bending gap square rings are nested but not overlapped; the second metal layer comprises a second square patch, and a third bending gap square ring is etched on the second square patch; the third metal layer comprises a third square patch, a fourth bending gap square ring and a fifth bending gap square ring are etched on the third square patch, and the two bending gap square rings are nested but not overlapped. The frequency selection structure provided by the application has the advantages of wide passband, controllable zero point, insensitive polarization, high selectivity, stable oblique incidence performance and the like, and is very suitable for a modern wireless communication system.

Description

Wide-angle, high-selectivity and zero-point-controllable frequency selection structure
Technical Field
The application belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to a wide-angle, high-selectivity and zero-point-controllable frequency selection structure and a design method thereof.
Background
A Frequency Selective Structure (FSS) is an array of artificial electromagnetic structures made up of identical cells arranged in a periodic fashion. It has different selectivity to the space electromagnetic wave with different working frequency, polarization state and incidence angle, so it can be regarded as the filter of the space electromagnetic wave. FSS has been widely used in the fields of radar radomes, antenna reflectors, polarizers, etc.
When the FSS radome is externally loaded onto a phased array antenna with scanning characteristics, it becomes critical to maintain stable filtering characteristics even at wide angles of incidence. In addition, the high selectivity makes the wave energy output inside and outside the passband greatly different, can effectively improve the communication quality and the interference resistance of a wireless communication system, and ensures the efficient operation of an electromagnetic system.
A convolution frequency selective surface proposed by the literature "minituned-elementBandpassFSSb LoadingCapacitiveStructure," (P.C.Zhao, Z.Y.Zong, W.Wu, B.LiandD.G.Fang, IEEETrans.AntennasPropag., vol.67, no.5, pp.3539-3544, may 2019) can provide a cell size as small as 4.84% of the free space wavelength at resonance frequency and achieve stable performance at angles of incidence up to 60 °, which is good in angular stability, but slow in roll-off on both sides of the passband and poor in out-of-band rejection.
The literature "design analysis of high-selection frequency surface 60GHz," (D.S.Wang, P.ZhaoandC.H.Chan, IEEETrans.Microw.TheoryTech., vol.64, no.6, pp.1694-1703, june 2016) uses an aperture coupled resonator (ApertureCoupledResonators, ACRs) to achieve a high selectivity frequency selective surface of 60GHz, a novel ACR FSS structure based on main electrical coupling is proposed, the in-phase signal path being constructed to create two transmission zeros near the edges of the narrow passband, thereby greatly improving selectivity, the structure is significant in terms of improving selectivity, but the relative bandwidth is narrower, and the angular stability is also poor.
Disclosure of Invention
The object of the present application is to solve the above-mentioned problems of the prior art and to provide a novel FSS with a zero point controllable and which can achieve a high selectivity performance over a wide range of angles of incidence.
The technical solution for realizing the purpose of the application is as follows: in one aspect, a wide-angle, high-selectivity, zero-controllable frequency selective structure is provided, the frequency selective structure comprising a plurality of frequency selective surface structural units forming a periodic array, each frequency selective surface structural unit comprising a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a third metal layer bonded in sequence from top to bottom; the first metal layer, the second metal layer and the third metal layer are the same in structure size;
the first metal layer comprises a first square patch, a first bending gap square ring and a second bending gap square ring are etched on the first square patch, and the two bending gap square rings are nested but not overlapped;
the second metal layer comprises a second square patch, and a third bending gap square ring is etched on the second square patch;
the third metal layer comprises a third square patch, a fourth bending gap square ring and a fifth bending gap square ring are etched on the third square patch, and the two bending gap square rings are nested but not overlapped;
the structure of all the bending gap square rings is as follows: each side of the square slit ring is provided with an inward rectangular groove;
the second bending slit square ring, the third bending slit square ring and the fourth bending slit square ring are used for generating three transmission poles; the first bending gap square ring and the fifth bending gap square ring are used for introducing two transmission zero points.
Further, the length and width of each bending gap square ring are adjustable, and the bending gap square ring is used for adjusting the filtering characteristic of the frequency selective surface.
Further, the loop length of each bending gap square ring is calculated by the following steps:
calculating the wavelength lambda corresponding to the resonance point frequency of the bent slit square ring according to a resonance frequency calculation formula of the slit type frequency selection surface:
λ＝c/f
wherein c is the propagation speed of light in vacuum, and f is the resonant point frequency;
let lambda be the loop length of the bending gap square ring, determine each side length of the bending gap square ring according to the loop length.
Further, the positions of the second bending gap square ring, the third bending gap square ring and the fourth bending gap square ring are corresponding, the structural sizes of the second bending gap square ring, the third bending gap square ring and the fourth bending gap square ring are similar, and the size difference is within a preset threshold range.
Further, the sizes of the first bending slit square ring and the fifth bending slit square ring are adjustable, so that the positions are adjustable, and the first bending slit square ring and the fifth bending slit square ring can be respectively positioned at the inner side or the outer side of the second bending slit square ring and the fourth bending slit square ring and used for adjusting the positions of two transmission zero points; when the first bending slit square ring is positioned at the outer side and the fifth bending slit square ring is positioned at the inner side, two transmission zero points are respectively positioned at two sides of the passband; when the first bending slit square ring and the fifth bending slit square ring are both positioned at the inner side or the outer side, the two transmission zeros are positioned at the same side of the passband.
Further, the first dielectric layer and the second dielectric layer are both Rogers5880 substrates.
Further, each metal layer was bonded using prepreg Rogers 4450F.
On the other hand, a design method of a wide-angle, high-selectivity and zero-controllable frequency selective structure is provided, which comprises the following steps:
1) Designing a third-order bandpass chebyshev response structure, selecting a dielectric plate material of a dielectric layer, calculating a formula according to the resonance frequency of a slit-type frequency selection surface, deducing the unit period of the frequency selection surface structure and the loop lengths of a second bending slit square ring, a third bending slit square ring and a fourth bending slit square ring, and determining the side lengths of the sides of the unit period;
2) Designing a low-frequency stop band structure, deducing the loop length of a first bending slit square ring according to a resonance frequency calculation formula of a slit type frequency selection surface, and determining the side lengths of the edges of the first bending slit square ring;
3) Designing a high-frequency stop band structure, deducing the loop length of a fifth bending slit square ring according to a resonance frequency calculation formula of a slit type frequency selection surface, and determining the side lengths of all sides of the fifth bending slit square ring;
4) The filter characteristics of the frequency selective surface are finely adjusted by adjusting the length and the width of each bending gap square ring.
Compared with the prior art, the application has the remarkable advantages that:
(1) The application has high selectivity, and adopts a three-layer metal structure to introduce a transmission zero point at two sides of the passband, thereby realizing the bilateral abrupt drop at two sides of the passband and reducing the transition zone between the passband and the stopband.
(2) The application has the advantage of flexible control of the zero point, the two zero point positions can be arranged on two sides or on the same side, and the frequency of the zero point can be independently controlled without influencing the passband.
(3) The application has large angle stability and good transmission response under different polarizations and 60-degree oblique incidence.
The application is described in further detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a perspective view of a frequency selective structure in one embodiment.
Fig. 2 is a detailed structural side view of a frequency selective structure in one embodiment.
Fig. 3 is a top view of a first metal layer unit structure of a frequency selective structure in one embodiment.
Fig. 4 is a top view of a second metal layer unit structure of a frequency selective structure in one embodiment.
Fig. 5 is a top view of a third metal layer unit structure of a frequency selective structure in one embodiment.
Fig. 6 is a diagram of simulation results of three S parameters that may be implemented by the frequency selective architecture in one embodiment.
Fig. 7 is a diagram of S-parameter simulation results for type one in a frequency selective architecture in one embodiment.
FIG. 8 is a graph of transmission coefficient as a function of parameter d3 for a type of frequency selective structure in one embodiment.
Fig. 9 is a graph of transmission coefficient as a function of parameter d5 for a type of frequency selective structure in one embodiment.
FIG. 10 is a graph of transmission coefficients at different angles of incidence for TE polarized incident waves for a type one frequency selective structure in one embodiment.
FIG. 11 is a graph of transmission coefficients at different angles of incidence for a TM polarized incident wave for a type one frequency selective structure in one embodiment.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present application, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present application, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present application.
In one embodiment, in combination with fig. 1 and 2, a wide-angle, high-selectivity, zero-controllable frequency selective structure is provided, which comprises a number of frequency selective surface structural units forming a periodic array, each of which comprises a first metal layer 6, a first dielectric layer 9, a second metal layer 7, a second dielectric layer 10, and a third metal layer 8 bonded in sequence from top to bottom; the first metal layer 6, the second metal layer 7 and the third metal layer 8 have the same structure size;
the first metal layer 6 comprises a first square patch, a first bending gap square ring 1 and a second bending gap square ring 2 are etched on the first square patch, and the two bending gap square rings are nested but not overlapped;
the second metal layer 7 comprises a second square patch, and a third bending gap square ring 3 is etched on the second square patch;
the third metal layer 8 comprises a third square patch, on which a fourth bending slit square ring 4 and a fifth bending slit square ring 5 are etched, and the two bending slit square rings are nested but not overlapped;
the structure of all the bending gap square rings is as follows: each side of the square slit ring is provided with an inward rectangular groove;
the second bending slit square ring 2, the third bending slit square ring 3 and the fourth bending slit square ring 4 are used for generating three transmission poles; the first bending slit square ring 1 and the fifth bending slit square ring 5 are used for introducing two transmission zero points.
Here, the length and width of each bending slit square ring are adjustable for adjusting the filter characteristics of the frequency selective surface.
Here, the loop length of each bending slit square ring is calculated by:
calculating the wavelength lambda corresponding to the resonance point frequency of the bent slit square ring according to a resonance frequency calculation formula of the slit type frequency selection surface:
λ＝c/f
wherein c is the propagation speed of light in vacuum, and f is the resonant point frequency;
let lambda be the loop length of the bending gap square ring, determine each side length of the bending gap square ring according to the loop length.
The positions of the second bending gap square ring 2, the third bending gap square ring 3 and the fourth bending gap square ring 4 are corresponding, and the structural sizes of the two square rings are the same or similar in size difference within a preset threshold range.
When electromagnetic waves are perpendicularly incident, the metal wire parts parallel to the electric field direction are equivalent to inductors, and the gaps between the metal wires perpendicular to the electric field direction are equivalent to capacitors, so that the bent gap square rings form a parallel capacitor inductor circuit. The second bending slit square ring 2, the third bending slit square ring 3 and the fourth bending slit square ring 4 are all modeled as parallel capacitance inductance resonance circuits, and three transmission poles are generated; the first bending slit square ring 1 and the fifth bending slit square ring 5 are used as suspension resonators and are directly coupled to the first resonator and the last resonator, the suspension resonators are regarded as stop band resonators integrated in the band-pass filter, two transmission zero points can be additionally introduced, and the selectivity of the filter response is greatly improved.
The position of the transmission zero depends on the resonance lengths of the first bending slit square ring 1 and the fifth bending slit square ring 5. As shown in fig. 1, the loop length of the first bending slit square ring 1 is longer than that of the second bending slit square ring 2, and the resonance frequency is lower than the working frequency, so that the transmission zero point is located at the left side of the passband. The loop length of the fifth bending slit square ring 5 is shorter than that of the fourth bending slit square ring 4, and the resonance frequency is higher than the working frequency, so that the transmission zero point is positioned on the right side of the passband. This structural layout is named type one (TypeI), whose S parameters are shown in fig. 6, where type two (TypeII) and type three (TypeIII) correspond to the following two cases, respectively: if the resonance lengths of the first bending slit square ring 1 and the fifth bending slit square ring 5 are shorter, namely, the first bending slit square ring and the second bending slit square ring are respectively positioned at the inner sides of the second bending slit square ring 2 and the fourth bending slit square ring 4, the positions of the two transmission zero points are positioned at the right side of the passband; if the resonance lengths of the first bending slit square ring 1 and the fifth bending slit square ring 5 are longer, that is, the first bending slit square ring and the second bending slit square ring are respectively positioned at the outer sides of the second bending slit square ring 2 and the fourth bending slit square ring 4, the positions of the two transmission zeros are positioned at the left side of the passband. (the present application only shows the corresponding structure of type one, i.e., fig. 1, and the other two types can be known from the above description.)
The design method of the frequency selection structure comprises the following steps:
1) Designing a third-order bandpass chebyshev response structure, selecting a dielectric plate material of a dielectric layer, deducing a frequency selection surface structural unit period and loop lengths of a second bending slit square ring 2, a third bending slit square ring 3 and a fourth bending slit square ring 4 according to a resonant frequency calculation formula of a slit type frequency selection surface, and determining side lengths of the edges of the third bending slit square ring, the third bending slit square ring and the fourth bending slit square ring;
2) Designing a low-frequency stop band structure, deducing the loop length of the first bending slit square ring 1 according to a resonance frequency calculation formula of the slit type frequency selection surface, and determining the side lengths of the edges of the first bending slit square ring;
3) Designing a high-frequency stop band structure, deducing the loop length of the fifth bending slit square ring 5 according to a resonance frequency calculation formula of the slit type frequency selection surface, and determining the side lengths of the edges of the fifth bending slit square ring;
4) The filter characteristics of the frequency selective surface are finely adjusted by adjusting the length and the width of each bending gap square ring.
Preferably, the periodic array is a rectangular array.
Preferably, the first dielectric layer 9 and the second dielectric layer 10 are Rogers5880 substrates; each metal patch layer was bonded using prepreg Rogers 4450F.
As a specific example, in one embodiment, the present application is further illustrated.
And performing further simulation analysis on the type I. In this embodiment, the relative dielectric constants of the first dielectric layer 9 and the second dielectric layer 10 are 2.2 and the thickness is 2.75mm, and the rectangular groove arranged on each side of the square slit ring is located at the center of the side. The dimensions of the frequency selective structure are as shown in fig. 3 to 5, and the following dimensional parameters are used: the side length of the first bending slit square ring 1 is 2 (the length l of the side length on one side of the rectangular groove 1 =0.9 mm), 2 (width d of rectangular groove 1 =0.6 mm), length w of rectangular groove 1 The side length of the second bending slit square ring 2 is 2 x (length l of the side on one side of the rectangular groove 2 ＝0.9mm)，2 (width d of rectangular groove) 2 =0.5 mm), length w of rectangular groove 2 The side length of the third bending slit square ring 3 is 2 x (length l of the side on one side of the rectangular groove 3 =1.3 mm), 2 (width d of rectangular groove 3 =0.6 mm), length w of rectangular groove 3 The side length of the fourth bending slit square ring 4 is 2 x (length l of the side on one side of the rectangular groove 4 =1.2 mm), 2 (width d of rectangular groove 4 =0.1 mm), length w of rectangular groove 4 The side length of the fifth bending slit square ring 5 is 2 x (length l of the side on one side of the rectangular groove 5 =0.7 mm), 2 (width d of rectangular groove 5 =0.4 mm), length w of rectangular groove 5 =0.55 mm five-segment length superposition. The width of the slits was c=0.1 mm.
In this embodiment, modeling simulation is performed in electromagnetic simulation software CST, and S parameters thereof are shown in fig. 7, and it can be seen that the center frequency of the frequency selective structure is 21.3GHz, the 3db bandwidth is about 4.5GHz (19.1 GHz-23.6 GHz), and the relative bandwidth is 21%. In addition, it can be clearly observed in the figure that the two transmission zeros are respectively at 17.7GHz and 25.4GHz, and the introduction of the transmission zeros enhances the steepness outside the passband. Fig. 8 and 9 are respectively type-dependent parameter d 3 And d 5 The transmission coefficient profile of the variation, from which it can be seen that the transmission zeroes can be independently controlled without affecting the passband by varying the corresponding physical parameters.
Fig. 10 and 11 are graphs showing transmission of the frequency selective structure of the present application at60 oblique incidence for TE and TM polarized incident waves, respectively. It can be seen that the insertion loss in the passband is slightly increased under TE wave incidence, and the center frequency is almost unchanged; the passband and stopband characteristics remain substantially stable at TM wave incidence. Therefore, the frequency selective structure has good angle stability and polarization stability.
In summary, the frequency selection structure provided by the application has the advantages of wide passband, controllable zero point, insensitive polarization, high selectivity, stable oblique incidence performance and the like, and is very suitable for a modern wireless communication system.
The foregoing has outlined and described the basic principles, features, and advantages of the present application. It will be understood by those skilled in the art that the foregoing embodiments are not intended to limit the application, and the above embodiments and descriptions are meant to be illustrative only of the principles of the application, and that various modifications, equivalent substitutions, improvements, etc. may be made within the spirit and scope of the application without departing from the spirit and scope of the application.

Claims (9)

1. A wide-angle, high-selectivity and zero-controllable frequency selective structure, characterized in that the frequency selective structure comprises a plurality of frequency selective surface structural units forming a periodic array, and each frequency selective surface structural unit comprises a first metal layer (6), a first dielectric layer (9), a second metal layer (7), a second dielectric layer (10) and a third metal layer (8) which are sequentially bonded from top to bottom; the first metal layer (6), the second metal layer (7) and the third metal layer (8) are identical in structural size;
the first metal layer (6) comprises a first square patch, a first bending gap square ring (1) and a second bending gap square ring (2) are etched on the first square patch, and the two bending gap square rings are nested but not overlapped;
the second metal layer (7) comprises a second square patch, and a third bending gap square ring (3) is etched on the second square patch;
the third metal layer (8) comprises a third square patch, a fourth bending gap square ring (4) and a fifth bending gap square ring (5) are etched on the third square patch, and the two bending gap square rings are nested but not overlapped;
the structure of all the bending gap square rings is as follows: each side of the square slit ring is provided with an inward rectangular groove;
the second bending slit square ring (2), the third bending slit square ring (3) and the fourth bending slit square ring (4) are used for generating three transmission poles; the first bending slit square ring (1) and the fifth bending slit square ring (5) are used for introducing two transmission zero points.
2. The wide angle, high selectivity, zero controllable frequency selective structure of claim 1, wherein each of the meander slit square rings is adjustable in length and width for adjusting the filter characteristics of the frequency selective surface.
3. The wide angle, high selectivity, zero controllable frequency selective structure of claim 1, wherein the loop length of each folded slit square ring is calculated by:
calculating the wavelength lambda corresponding to the resonance point frequency of the bent slit square ring according to a resonance frequency calculation formula of the slit type frequency selection surface:
λ＝c/f
wherein c is the propagation speed of light in vacuum, and f is the resonant point frequency;
let lambda be the loop length of the bending gap square ring, determine each side length of the bending gap square ring according to the loop length.
4. The wide-angle, high-selectivity and zero-point-controllable frequency selective structure according to claim 1, wherein the positions of the second bending slit square ring (2), the third bending slit square ring (3) and the fourth bending slit square ring (4) are corresponding, the structural sizes of the three are similar, and the size difference is within a preset threshold range.
5. The wide-angle, high-selectivity and zero-point-controllable frequency selection structure according to claim 2, wherein the dimensions of the first bending slit square ring (1) and the fifth bending slit square ring (5) are adjustable, so that the positions are adjustable, and the first bending slit square ring and the fifth bending slit square ring can be respectively positioned at the inner side or the outer side of the second bending slit square ring (2) and the fourth bending slit square ring (4) and used for adjusting the positions of two transmission zero points; when the first bending slit square ring (1) is positioned at the outer side and the fifth bending slit square ring (5) is positioned at the inner side, two transmission zero points are respectively positioned at two sides of the passband; when the first bending slit square ring (1) and the fifth bending slit square ring (5) are both positioned at the inner side or the outer side, two transmission zero points are positioned at the same side of the passband.
6. The wide-angle, high-selectivity, zero-controllable frequency selective structure according to claim 1, characterized in that the first dielectric layer (9) and the second dielectric layer (10) are both Rogers5880 substrates.
7. The wide angle, high selectivity, zero controllable frequency selective structure of claim 1, wherein each metal layer is bonded using prepreg Rogers 4450F.
8. The wide angle, high selectivity, zero controllable frequency selective structure of claim 1, wherein the periodic array is a rectangular array.
9. The wide angle, high selectivity, zero controllable frequency selective structure according to claim 1, characterized in that the relative dielectric constant of the first dielectric layer (9), the second dielectric layer (10) is 2.2 and the thickness is 2.75mm.
CN202310804936.9A 2023-07-03 2023-07-03 Wide-angle, high-selectivity and zero-point-controllable frequency selection structure Pending CN116706561A (en)

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