CN116705869A - Preparation method and application of silicon carbide detector chip containing transparent electrode - Google Patents
Preparation method and application of silicon carbide detector chip containing transparent electrode Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 97
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000001514 detection method Methods 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 238000002161 passivation Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000003780 insertion Methods 0.000 claims description 19
- 230000037431 insertion Effects 0.000 claims description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims description 14
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 14
- 229910001020 Au alloy Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000011056 performance test Methods 0.000 abstract description 4
- 230000001052 transient effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002687 intercalation Effects 0.000 description 4
- 238000009830 intercalation Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention relates to the technical field of detectors, and provides a preparation method and application of an anti-irradiation silicon carbide detector chip containing a transparent electrode, wherein the chip is a detector chip vertically incident from the top surface, and comprises the following steps from top to bottom: a first electrode, a transparent electrode, an ohmic contact layer, an intrinsic layer, a silicon carbide substrate, and a second electrode; the first electrode is of an annular structure as a whole, and an annular part of the first electrode is positioned at the edge of the transparent electrode and is in ohmic contact with the first electrode; and an electric dipole layer is formed between the transparent electrode and the ohmic contact layer and is used for receiving photons or high-energy particles and carrying out carrier transmission. The silicon carbide detector chip prepared by the invention can meet the application requirements of heavy ion detection, nuclear reactor detection and ultraviolet laser-based Transient Current Technology (TCT) -based silicon carbide detector performance test, and the time resolution performance and position resolution performance of the silicon carbide detector on passing particles are also obviously improved.
Description
Technical Field
The invention relates to the technical field of detectors, in particular to a preparation method and application of an anti-irradiation silicon carbide detector chip containing a transparent electrode.
Background
The physical characteristics of high atomic displacement threshold, critical breakdown field strength, high electron saturation drift rate and high thermal conductivity of the silicon carbide determine that the silicon carbide has the advantages of intrinsic radiation resistance, high temperature resistance, low noise, high working voltage, high energy resolution, high charge collection efficiency, quick time response and the like. Therefore, the method has wide application in extreme environments such as ultraviolet, extreme ultraviolet detection, space detection, nuclear power station, particle collider, nuclear reactor and the like in the future. In CN116154020a, a two-dimensional material optimized low-gain avalanche multiplication anti-irradiation silicon carbide detector chip is described, but a metal electrode is adopted in a sensitive area of the detector, so that detection requirements of heavy ion detection, nuclear reactors and the like are not met, and in the structure, the silicon carbide detector chip is difficult to meet the performance test of a silicon carbide detector based on ultraviolet laser Transient Current Technology (TCT) due to the blocking of the metal electrode to laser.
In view of this, the present invention has been proposed.
Disclosure of Invention
The invention provides a preparation method and application of a silicon carbide detector chip containing a transparent electrode, which are used for solving the problems in the prior art. The silicon carbide detector chip has the advantages of repeatability, reproducibility, comparability and cost saving, and can improve the time resolution performance and the position resolution performance of the silicon carbide detector on passing particles, and is particularly suitable for the application of nuclear reactor detection and heavy ion detection.
Specifically, the invention provides a silicon carbide detector chip, which is a detector chip vertically incident from the top surface, and comprises from top to bottom: a first electrode, a transparent electrode, an ohmic contact layer, an intrinsic layer, a silicon carbide substrate, and a second electrode;
the first electrode is of an annular structure as a whole, and an annular part of the first electrode is positioned at the edge of the transparent electrode and is in ohmic contact with the first electrode;
and an electric dipole layer is formed between the transparent electrode and the ohmic contact layer and is used for receiving photons or high-energy particles and carrying out carrier transmission.
According to the silicon carbide detector chip provided by the invention, the transparent electrode is a graphene transparent electrode, a black phosphorus transparent electrode or a molybdenum disulfide transparent electrode. Due to the existence of the annular electrode, the electric field of the large-size silicon carbide detector (the detection side length is larger than 500 mu m) is in an annular uneven state, so that charge collection signals are uneven, namely timing errors are caused by distortion of signal currents, the improvement of the position resolution and time resolution performance of the particle detector is limited to a certain extent, and the graphene transparent electrode, the black phosphorus transparent electrode or the molybdenum disulfide transparent electrode is adopted, so that the high carrier mobility is realized, the uniformity of the electric field is obviously improved, and the limitation brought by the structure can be overcome.
According to the silicon carbide detector chip provided by the invention, the thickness of the transparent electrode is 0.2-5 nm; preferably, the transparency to ultraviolet extreme ultraviolet light is 80% or more.
According to the silicon carbide detector chip provided by the invention, the positions except the first electrode on the top of the transparent electrode are all passivation layers, and the passivation layers are silicon dioxide passivation layers or silicon nitride passivation layers.
According to the silicon carbide detector chip provided by the invention, the insertion layer is arranged between the silicon carbide substrate and the second electrode, ohmic contact is formed between the silicon carbide substrate and the second electrode, and an electric dipole layer is formed between the silicon carbide substrate and the ohmic contact layer. Preferably, the intercalation layer is a graphene intercalation layer, a black phosphorus intercalation layer or a molybdenum disulfide intercalation layer.
According to the silicon carbide detector chip provided by the invention, the first electrode is a Ni/Ti/Al alloy electrode, an Al/Ti/Au alloy electrode or a Ti/Al/Au alloy electrode, and/or the second electrode is a Ni/Ti/Al alloy electrode, an Al/Ti/Au alloy electrode or a Ti/Al/Au alloy electrode.
According to the silicon carbide detector chip provided by the invention, the ohmic contact layer is a P-type heavily doped silicon carbide layer with the thickness of 0.2-5 mu m, and the average doping concentration is preferably 1 multiplied by 10 18 cm -3 ～1×10 20 cm -3 。
According to the silicon carbide detector chip provided by the invention, the intrinsic layer is N-type low-doped silicon carbide, the thickness is 10-400 mu m, and the average doping concentration is preferably controlled to be 1 multiplied by 10 15 cm -3 The following are set forth; and/or the silicon carbide substrate is an N-type conductive silicon carbide substrate.
The invention also provides a preparation method of the silicon carbide detector chip.
The invention also provides application of the silicon carbide detector chip in ultraviolet detection, extreme ultraviolet detection, nuclear reactor detection or heavy ion detection, and is particularly suitable for nuclear reactor detection or heavy ion detection.
According to the preparation method and the application of the silicon carbide detector chip with the transparent electrode, the first electrode is designed to be of the annular structure, and ohmic contact among the first electrode, the transparent electrode and the ohmic contact layer is realized, so that the application requirements of heavy ion detection, nuclear reactor detection and ultraviolet laser-based Transient Current Technology (TCT) -based silicon carbide detector performance test can be met, and the time resolution performance and the position resolution performance of the silicon carbide detector on passing particles are also remarkably improved.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a first electrode and a transparent electrode according to the present invention;
FIG. 2 is a schematic diagram of the structure of a silicon carbide detector chip in example 1 provided by the present invention;
fig. 3 is a second schematic structural view of a silicon carbide detector chip in embodiment 2 provided by the present invention.
Reference numerals:
1. pad electrodes; 2. a first electrode; 3. a passivation layer; 4. a transparent electrode; 5. an ohmic contact layer; 6. an intrinsic layer; 7. a silicon carbide substrate; 8. a second electrode; 9. an interposer layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The specific techniques or conditions are not identified in the examples and are described in the literature in this field or are carried out in accordance with the product specifications. The reagents or equipment used were conventional products available for purchase by regular vendors without the manufacturer's attention.
The following describes a method for manufacturing a silicon carbide detector chip with transparent electrodes and the application thereof in conjunction with fig. 1-3.
The silicon carbide detector chip provided by the invention is a detector chip which is vertically incident from the top surface, and comprises the following components from top to bottom: a first electrode, a transparent electrode, an ohmic contact layer, an intrinsic layer, a silicon carbide substrate, and a second electrode;
as shown in fig. 1, the first electrode is in an annular structure, and an annular part of the first electrode is positioned at the edge of the transparent electrode and is in ohmic contact with the first electrode for lead wires; the size of the annular structure may depend on the structure of the silicon carbide detector to which the silicon carbide detector chip is applied, and in general, the inner diameter of the annular structure may be appropriately increased in order to increase the reception of photons or energetic particles by the transparent electrode.
And an electric dipole layer is formed between the transparent electrode and the ohmic contact layer and is used for receiving photons or high-energy particles and carrying out carrier transmission.
The silicon carbide detector chip designed by the invention has the advantages that other parts except the first electrode, such as the first electrode, the transparent electrode, the ohmic contact layer, the intrinsic layer, the silicon carbide substrate and the second electrode, are all solid layer structures and are arranged layer by layer from top to bottom.
Preferably, the transparent electrode is a graphene transparent electrode, a black phosphorus transparent electrode or a molybdenum disulfide transparent electrode.
Preferably, the transparent electrode has a thickness of 0.2nm to 5nm, and preferably has a transparency to ultraviolet light and/or extreme ultraviolet light of 80% or more.
Preferably, the top of the transparent electrode except the first electrode is a passivation layer, preferably, the passivation layer is a silicon dioxide passivation layer or a silicon nitride passivation layer, and preferably, the thickness of the passivation layer is generally 100-500 nm. The passivation layer in the invention not only plays a role in protecting the transparent electrode, but also plays a role of an anti-reflection film of light by optimizing the thickness of the passivation layer and carrying out light transmission selection according to ultraviolet light used by a TCT test.
Preferably, an insertion layer is arranged between the silicon carbide substrate and the second electrode, ohmic contact is formed between the silicon carbide substrate and the second electrode, an electric dipole layer is formed between the silicon carbide substrate and the ohmic contact layer, the insertion layer is the graphene insertion layer, the black phosphorus insertion layer or the molybdenum disulfide insertion layer, and preferably, the thickness of the insertion layer is generally 0.2-5 nm.
Preferably, the first electrode is a Ni/Ti/Al alloy electrode, an Al/Ti/Au alloy electrode or a Ti/Al/Au alloy electrode, preferably having a thickness of typically Ni/Ti/al=30 nm/60nm/500nm; al/Ti/au=30 nm/70nm/100nm; ti/Al/au=120 nm/60nm/80nm, and/or said second electrode is a Ni/Ti/Al alloy electrode, an Al/Ti/Au alloy electrode or a Ti/Al/Au alloy electrode, preferably having a thickness of typically Ni/Ti/al=40 nm/70nm/500nm; al/Ti/au=30 nm/60nm/300nm; ti/Al/Au=120 nm/60nm/100nm.
Preferably, the ohmic contact layer is a P-type heavily doped silicon carbide layer with a thickness of 0.2 μm to 5 μm, preferably with an average doping concentration of 1×10 18 cm -3 ～1×10 20 cm -3 。
Preferably, the intrinsic layer is N-type low doped silicon carbide with a thickness of 10 μm-400 μm, preferably with an average doping concentration of 1×10 15 cm -3 The following are set forth; and/or the silicon carbide substrate is an N-type conductivity silicon carbide substrate, typically having a thickness of 350 μm.
The invention also provides a preparation method of the silicon carbide detector chip.
Preferably, the transparent electrode is manufactured on the silicon carbide epitaxial wafer by a silicon carbide thermal decomposition method, a wet transfer chemical vapor deposition method, a chemical vapor deposition method or a coating solution method;
manufacturing the first electrode on the transparent electrode, wherein the annealing temperature adopted in manufacturing the first electrode is 300-800 ℃;
removing redundant materials for manufacturing the transparent electrode;
manufacturing a passivation layer;
manufacturing the insertion layer on the back surface of the silicon carbide epitaxial wafer;
manufacturing the second electrode on the insertion layer, wherein the annealing temperature adopted in manufacturing the second electrode is 300-800 ℃;
manufacturing a Pad electrode;
dicing and packaging.
Because of the electron affinity and surface state density restriction of silicon carbide, ohmic contact resistivity formed by high-temperature annealing (> 1000 ℃) is higher, stability is poor, and process repeatability is low; and the high-temperature annealing can activate impurities in the silicon carbide to cause scattering of electric signals, so that the improvement of signal-to-noise ratio, charge collection, time resolution and working stability of the silicon carbide detector is restricted. The material of the transparent electrode adopted in the invention can form ohmic contact with the first electrode and the second electrode at low temperature, which is beneficial to improving the performance of the silicon carbide detector.
As shown in fig. 2, taking a silicon carbide detector chip with an insertion layer as an example, the specific preparation steps are as follows:
step one, cleaning and drying a silicon carbide epitaxial wafer:
and cleaning the silicon carbide epitaxial wafer to be cleaned according to the RCA standard, and drying the chip under the protection of high-purity nitrogen after cleaning, so as to ensure that the silicon carbide epitaxial wafer to be processed is heated and dried for later use. The silicon carbide epitaxial wafer to be cleaned can be obtained by adopting a conventional epitaxial manufacturing mode, such as epitaxial growth of an intrinsic layer and an ohmic contact layer on a silicon carbide substrate.
Step two, manufacturing a transparent electrode
First, it is necessary to prepare a transparent electrode on the ohmic contact layer by a silicon carbide thermal decomposition method, a wet transfer chemical vapor deposition method, a vapor deposition method, or a coating solution method, wherein the coating solution method may be a spin coating solution method, a drop coating solution method, or a spray coating solution method.
Step three, manufacturing a first electrode
And coating negative stripping photoresist such as SU-8 on the epitaxial wafer to be processed, and manufacturing a first electrode pattern through photoetching development. Then, sputtering and other metal processes by using a magnetron sputtering technology to grow the electrode metal material. Finally, a metal stripping process is carried out to manufacture the metal first electrode.
Step four, removing redundant two-dimensional materials
And coating photoresist such as AZ5214 on the epitaxial wafer to be processed, and performing photoetching development to obtain a first electrode structure pattern by taking the photoresist as a corrosion or etching soft mask. And then removing redundant two-dimensional materials on the epitaxial wafer by wet etching, dry etching or other methods, and cleaning the chip according to RCA standard. And after the cleaning is finished, the epitaxial wafer to be processed is dried under the protection of high-purity nitrogen, so that the wafer is heated and dried for later use after the cleaning is ensured to be clean.
Step five, manufacturing a passivation layer
Firstly, depositing or sputtering SiO with a certain thickness on an epitaxial wafer to be processed 2 Or Si (Si) 3 N 4 The insulating material is used as a passivation layer; and secondly, coating photoresist such as AZ5214 on the epitaxial wafer to be processed, photoetching and developing the hole of the first electrode, and corroding or etching the passivation layer to manufacture the hole of the first electrode.
Step six, manufacturing an insertion layer
And preparing an insertion layer on the back surface of the silicon carbide epitaxial wafer according to the method of the second step.
Step seven, manufacturing a second electrode
And sputtering a metal second electrode on the insertion layer through a magnetron sputtering technology. The alloy is annealed by a rapid annealing process, wherein the annealing temperature is 300-800 ℃, and the annealing time is 30 s-3 min.
Step eight, manufacturing Pad electrodes
And (3) coating negative stripping photoresist such as SU-8 on the epitaxial wafer to be processed, and manufacturing a Pad electrode pattern through photoetching and developing. Sputtering a metal second electrode on the insertion layer by a magnetron sputtering technology, and forming a Pad electrode by metal stripping.
Step nine, scribing and packaging:
and scribing the manufactured chip by using a scribing machine, welding an electrode of an external power supply system and a welding point by adopting modes such as wire bonding, hot-press welding and the like, and packaging the chip.
If the insertion layer is not contained, the step six is omitted in the preparation process, and in the step seven, the second electrode is formed on the back of the silicon carbide epitaxial wafer by sputtering.
Example 1
As shown in FIG. 2, a silicon carbide detector chip containing a transparent electrode, which is a detector chip perpendicularly incident from the top surface, is composed of, from top to bottom, a Pad electrode 1, a Ni/Ti/Al alloy electrode (thickness 60nm/30nm/500 nm) 2, a silicon dioxide passivation layer (thickness 400 nm) 3, a graphene transparent electrode (thickness 0.334nm, transparency 90%) 4, an ohmic contact layer 5, an intrinsic layer 6, an N-type conductive silicon carbide substrate (thickness 350 μm) 7, a single graphene insertion layer (thickness about 0.334 nm) 9, and a Ni/Ti/Al alloy electrode (thickness 60nm/30nm/500 nm) 8.
The first electrode is in an annular structure, ohmic contact is formed between the annular part of the first electrode and the edge of the transparent electrode, the annular part is used for a lead wire, an electric dipole layer is formed between the transparent electrode and the ohmic contact layer, the electric dipole layer is used for receiving photons or high-energy particles and carrying out carrier transmission, and a silicon dioxide passivation layer is arranged at the top of the transparent electrode except the first electrode.
The ohmic contact layer 5 is P-type heavily doped silicon carbide, and the doping ions are Al 3+ Average doping concentration of 5X 10 19 cm -3 The thickness was 0.4. Mu.m.
The intrinsic layer 6 is N-type low doped silicon carbide, and the average doping concentration is controlled to be 5 multiplied by 10 13 cm -3 The thickness was 100. Mu.m.
Example 2
As shown in fig. 3, a silicon carbide detector chip with transparent electrodes is different from example 1 only in that: the interposer 9 was not contained, and the thickness of the passivation layer 3 was 300nm.
According to the silicon carbide detector chip, the first electrode is of the annular structure, ohmic contact among the first electrode, the transparent electrode and the ohmic contact layer is realized, the performance test requirement of the silicon carbide detector based on the Transient Current Technology (TCT) of ultraviolet laser can be met, and the time resolution performance and the position resolution performance of the silicon carbide detector on passing particles are obviously improved, so that the silicon carbide detector chip is particularly suitable for nuclear reactor detection and heavy ion detection.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A silicon carbide detector chip, the chip being a detector chip normally incident from a top surface, comprising, from top to bottom: a first electrode, a transparent electrode, an ohmic contact layer, an intrinsic layer, a silicon carbide substrate, and a second electrode;
the first electrode is of an annular structure as a whole, and an annular part of the first electrode is positioned at the edge of the transparent electrode and is in ohmic contact with the first electrode;
and an electric dipole layer is formed between the transparent electrode and the ohmic contact layer and is used for receiving photons or high-energy particles and carrying out carrier transmission.
2. The silicon carbide detector chip of claim 1, wherein the transparent electrode is a graphene transparent electrode, a black phosphorus transparent electrode, or a molybdenum disulfide transparent electrode.
3. The silicon carbide detector chip of claim 1 or 2, wherein the transparent electrode has a thickness of 0.2nm to 5nm.
4. The silicon carbide detector chip of claim 1, wherein the top of the transparent electrode except the first electrode is a passivation layer, and the passivation layer is a silicon dioxide passivation layer or a silicon nitride passivation layer.
5. The silicon carbide detector chip of claim 1, wherein a graphene insertion layer, a black phosphorus insertion layer or a molybdenum disulfide insertion layer is disposed between the silicon carbide substrate and the second electrode, and is in ohmic contact with the second electrode, and an electric dipole layer is formed between the second electrode and the ohmic contact layer.
6. The silicon carbide detector chip of claim 1, wherein the first electrode is a Ni/Ti/Al alloy electrode, an Al/Ti/Au alloy electrode, or a Ti/Al/Au alloy electrode, and/or the second electrode is a Ni/Ti/Al alloy electrode, an Al/Ti/Au alloy electrode, or a Ti/Al/Au alloy electrode.
7. The silicon carbide detector chip of claim 1, wherein the ohmic contact layer is a P-type heavily doped silicon carbide layer having a thickness of 0.2 μm to 5 μm.
8. The silicon carbide detector chip of claim 1, wherein the intrinsic layer is N-type low doped silicon carbide having a thickness of 10 μm to 400 μm; and/or the silicon carbide substrate is an N-type conductive silicon carbide substrate.
9. A method of manufacturing a silicon carbide detector chip according to any one of claims 1 to 8.
10. Use of a silicon carbide detector chip according to any one of claims 1 to 8 for nuclear reactor detection or heavy ion detection.
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