CN116683291B - Phase shift multi-wavelength semiconductor laser and preparation method thereof - Google Patents
Phase shift multi-wavelength semiconductor laser and preparation method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 230000010363 phase shift Effects 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 60
- 235000012239 silicon dioxide Nutrition 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4056—Edge-emitting structures emitting light in more than one direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a phase shift multi-wavelength semiconductor laser, which belongs to the technical field of semiconductor lasers and comprises the following components: at least one laser unit comprising a substrate and a ridge waveguide; the ridge waveguide comprises a conical grating region (1), a wide straight waveguide region (2) and a narrow straight waveguide region (3); the cone-shaped grating region (1) comprises N surface high-order grating regions and N-1 lambda/4 phase shift regions, wherein the N surface high-order grating regions are equally spaced apart by the N-1 lambda/4 phase shift regions, and N is an integer greater than 1; a wide straight waveguide area (2) connected with the wide end of the tapered grating area (1); and the narrow straight waveguide area (3) is connected with the narrow end of the tapered grating area (1). The invention also provides a preparation method of the phase-shift multi-wavelength semiconductor laser. The phase-shift multi-wavelength semiconductor laser solves the problems that the traditional multi-wavelength laser is difficult to realize uniform and compact distribution of intervals of a plurality of wavelengths, high in cost, complex in process and the like.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a phase-shift multi-wavelength semiconductor laser and a preparation method thereof.
Background
The wavelength division multiplexing (Wavelength Division Multiplexing, WDM) technology can couple a plurality of optical signals with different wavelengths and information into a single optical fiber for transmission, can realize simultaneous transmission of multiple signals, greatly improves the information transmission capacity, saves optical fiber resources, and is a core technology for expanding the bandwidth of an optical communication network. And a multi-wavelength laser is used as a light source of the WDM system, so that the multi-wavelength laser becomes an important research and development direction in the current laser field.
The most common WDM system multi-wavelength technique today is to combine the light from multiple single wavelength lasers through a wavelength combiner or multiplexer. The scheme is influenced by the processing errors of a plurality of single-wavelength lasers, and the wavelength of each single-wavelength laser needs to be accurately controlled. Currently, the dominant single-mode lasers are sampling grating structure lasers or distributed feedback structure lasers, and expensive high-precision lithography (e.g., electron beam lithography, holographic exposure, etc.) and complicated re-epitaxial growth steps are required for manufacturing the lasers. Therefore, the conventional multi-wavelength laser has the problems of difficulty in realizing uniform and compact interval distribution of a plurality of wavelengths, high cost, complex process and the like. How to realize a low-cost, uniform and compact wavelength multi-wavelength semiconductor laser remains a critical challenge.
Disclosure of Invention
In view of the above, the present invention provides a phase shift multi-wavelength semiconductor laser and a method for manufacturing the same, so as to solve the above technical problems.
One aspect of the present invention provides a phase-shifted multi-wavelength semiconductor laser comprising: at least one laser unit comprising a substrate and a ridge waveguide; the ridge waveguide comprises a conical grating region, a wide straight waveguide region and a narrow straight waveguide region; the cone-shaped grating region comprises N surface high-order grating regions and N-1 lambda/4 phase shift regions, the N surface high-order grating regions are equally spaced apart by the N-1 lambda/4 phase shift regions, the widths of the N surface high-order grating regions and the lambda/4 phase shift regions are narrowed from wide to narrow according to an arrangement sequence, and N is an integer greater than 1; a wide straight waveguide area connected with the wide end of the tapered grating area; the narrow straight waveguide area is connected with the narrow end of the conical grating area; the upper surface of the ridge waveguide is provided with a strip-shaped electric injection window, and the narrow straight waveguide area is a laser output end.
According to an embodiment of the invention, the width of the lambda/4 phase shifting region is twice the groove pitch width of the surface higher order grating.
According to an embodiment of the present invention, when the number of the laser units is greater than 1, the ridge waveguides of the laser units are arranged parallel to each other on the same substrate.
According to an embodiment of the invention, the taper of the tapered grating region of the ridge waveguide is different.
According to the embodiment of the invention, the width and the length of the narrow straight waveguide region meet the single-mode stable output condition.
According to the embodiment of the invention, the substrate comprises a gain waveguide N-type epitaxial layer, an active layer and a gain waveguide P-type epitaxial layer in sequence from bottom to top, and the ridge waveguide is formed by etching the surface of the gain waveguide P-type epitaxial layer.
According to an embodiment of the present invention, further comprising: the silicon dioxide insulating layer covers the gain waveguide P-type epitaxial layer and the ridge waveguide, and the strip-shaped electric window is arranged in a region opposite to the ridge waveguide; p-plane metal growing on the silicon dioxide insulating layer and in the strip-shaped electric window and contacting with the ridge waveguide; and the N-face metal grows on the lower surface of the gain waveguide N-type epitaxial layer.
In another aspect, the present invention provides a method for preparing a phase-shifted multi-wavelength semiconductor laser according to any one of the first aspect, comprising: growing a silicon dioxide mask layer on the gain waveguide P-type epitaxial layer of the substrate, and etching silicon dioxide by taking photoresist as a mask to form a silicon dioxide mask; etching the gain waveguide P-type epitaxial layer based on the silicon dioxide mask, and forming at least one ridge waveguide on the upper surface of the gain waveguide P-type epitaxial layer, wherein each ridge waveguide and the substrate form a laser unit; the ridge waveguide comprises a conical grating region, a wide straight waveguide region and a narrow straight waveguide region, wherein the conical grating region comprises N surface high-order grating regions and N-1 lambda/4 phase shift regions.
According to an embodiment of the present invention, the preparation method further includes: adjusting the silicon dioxide mask, comprising: the groove width, the groove spacing, the groove number and the groove depth of the surface high-order grating are adjusted to adjust the output center laser wavelength of the ridge waveguide; adjusting the number of lambda/4 phase shift regions in the ridge waveguide to adjust the number of wavelengths of laser output by the ridge waveguide; and/or adjusting the taper of a tapered grating region in the ridge waveguide to adjust the wavelength interval of the laser output by the ridge waveguide.
According to an embodiment of the present invention, the preparation method further includes: growing a silicon dioxide insulating layer on the gain waveguide P-type epitaxial layer and the ridge waveguide, photoetching and etching a strip-shaped electric window; growing P-plane metal on the upper surface of the silicon dioxide insulating layer and in the strip-shaped electric window; thinning, grinding and polishing the gain waveguide N-type epitaxial layer of the substrate, and growing N-face metal; dicing and cleaving the substrate and the ridge waveguide to obtain the phase-shifted multi-wavelength semiconductor laser.
The above at least one technical scheme adopted in the embodiment of the invention can achieve the following beneficial effects:
the invention provides a phase shift multi-wavelength semiconductor laser, which is characterized in that a surface high-order grating is manufactured in a conical grating area of a ridge waveguide and is uniformly separated by a plurality of lambda/4 phase shift areas, each laser unit can simultaneously output a plurality of uniformly and compactly spaced wavelengths, and further, a plurality of laser units are arranged in an array mode to realize more wavelength output. The surface high-order grating adopted by the invention only needs the common photoetching technology, does not need expensive high-precision photoetching, does not need complex re-epitaxial growth steps, greatly reduces the manufacturing cost of the multi-wavelength semiconductor laser, and simplifies the manufacturing process of the multi-wavelength semiconductor laser.
Drawings
For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
fig. 1 schematically shows a schematic perspective view of a laser unit of a phase-shifted multi-wavelength semiconductor laser according to an embodiment of the present invention;
FIG. 2 schematically illustrates a top view of a ridge waveguide region of a laser unit of a phase-shifted multi-wavelength semiconductor laser according to an embodiment of the present invention;
FIG. 3 schematically illustrates a cross-sectional view of a phase-shifted multi-wavelength semiconductor laser unit, in accordance with an embodiment of the present invention;
FIG. 4 schematically illustrates an array parallel arrangement of a plurality of laser units of a phase-shifted multi-wavelength semiconductor laser according to an embodiment of the present invention;
fig. 5 schematically shows a flow chart of a method for manufacturing a phase-shifted multi-wavelength semiconductor laser according to an embodiment of the invention.
Reference numerals illustrate:
1-a tapered grating region;
2-wide straight waveguide region;
3-a narrow straight waveguide region;
4. 5, 6, 7, 8-surface higher order grating regions;
9. 10, 11, 12-lambda/4 phase shift regions;
13-gain waveguide P-type epitaxial layer;
14-an active layer;
15-gain waveguide N-type epitaxial layer;
16-surface higher order grating groove depth H16;
17-wide waveguide region length W17;
18-narrow waveguide region length W18;
19—tapered grating zone length W19;
20-wide waveguide region width W20;
21—narrow waveguide region width W21;
22—surface higher order grating groove width W22;
23-surface higher order grating groove spacing W23;
24-lambda/4 phase shift region width W24;
25-a silicon dioxide insulating layer;
26-P plane metal;
27-N face metal.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
Fig. 1 schematically shows a schematic perspective view of a laser unit of a phase-shifted multi-wavelength semiconductor laser according to an embodiment of the present invention.
As shown in fig. 1, the phase-shift multi-wavelength semiconductor laser provided in the embodiment of the present invention includes at least one laser unit. The laser unit includes a substrate and a ridge waveguide. The ridge waveguide comprises a tapered grating region 1, a wide straight waveguide region 2 and a narrow straight waveguide region 3. Tapered grating region 1 comprises N surface higher order grating regions (regions indicated by reference numerals 4-8 in FIG. 1) and N-1 lambda/4 phase shifting regions (regions indicated by reference numerals 9-12 in FIG. 1). N surface high-order grating areas are equally spaced apart by N-1 lambda/4 phase shift areas, the widths of the N surface high-order grating areas and the lambda/4 phase shift areas are narrowed from wide to narrow according to the arrangement sequence, and N is an integer greater than 1; a wide straight waveguide area 2 connected with the wide end of the tapered grating area 1; the narrow straight waveguide region 3 is connected with the narrow end of the tapered grating region 1. The upper surface of the ridge waveguide is provided with a strip-shaped electric injection window, and the narrow straight waveguide area 3 is a laser output end. In this embodiment, the surface higher order grating regions are uniformly spaced apart by 4 λ/4 phase shift regions, which can achieve that each laser unit outputs 4O-band wavelengths with uniform wavelength spacing at the same time.
In this embodiment, the output center laser wavelength of the laser unit of the phase-shift multi-wavelength semiconductor laser is determined by the surface higher order grating. Specifically, the output center laser wavelength of the ridge waveguide is adjusted by adjusting the groove width, the groove spacing, the groove number and the groove depth of the surface high-order grating.
In this embodiment, the number of λ/4 phase shift regions corresponds to the number of output wavelengths, and the intervals between the multiple output wavelengths are determined by the taper of the tapered grating region 1, where the taper of the tapered grating region 1 affects the effective refractive index and the bragg wavelength variation along the laser cavity, so that each laser unit can output multiple wavelengths with uniform and compact intervals at the same time. In fig. 1, 4 lambda/4 phase shifting regions are schematically shown, separating the surface higher order grating region into 5 regions. It should be noted that the number of λ/4 phase shift regions and surface higher order grating regions shown in fig. 1 is merely illustrative, and may be specifically selected according to practical requirements.
Fig. 2 schematically illustrates a top view of a ridge waveguide region of a laser unit of a phase-shifted multi-wavelength semiconductor laser according to an embodiment of the present invention.
As shown in fig. 2, each laser unit actually uses the groove width W22, the groove pitch W23, the groove number, the groove depth H16, the number of λ/4 phase regions, the taper of the tapered grating region (determined by the wide straight waveguide width W20 and the narrow straight waveguide width W21), the length W19 of the tapered grating region, the ridge height of the ridge waveguide region, etc. of the surface higher-order grating, and the width W24 of the λ/4 phase shift region is twice the groove pitch width W23 of the surface higher-order grating. The width and length of the narrow straight waveguide region 2 are required to satisfy the single-mode stable output condition.
In the present embodiment, the number of λ/4 phase regions is designed to be 4; in addition, the narrow straight waveguide has a width of less than 3 μm and a length of more than 20 μm, so as to ensure stable output of single mode.
On the basis of the above embodiment, the number of lambda/4 phase shift regions in the tapered grating region 1 can be increased to increase the number of output wavelengths, but the threshold current of the laser may be increased, so that the number of phase shift regions needs to be determined by the performance of the actually manufactured laser.
In this embodiment, the substrate includes, in order from bottom to top, a gain waveguide N-type epitaxial layer 13, an active layer 14, and a gain waveguide P-type epitaxial layer 15, and the ridge waveguide is etched on the surface of the gain waveguide P-type epitaxial layer 15. The whole laser is prepared on one substrate epitaxial wafer, the whole area contains the same active area, the whole laser is active, the power loss caused by etching the surface higher-order grating is compensated, and the power of the whole laser is improved; the material is a semiconductor epitaxial material, and has the advantages of wide gain range and low threshold current; the pumping mode is electric injection, gain is provided for the whole laser through electric injection, and the active layer is used for generating optical gain, so that the laser is convenient and practical, and high-precision control is easy to realize. In this embodiment, the semiconductor epitaxial material is InP and the optical gain is achieved by injecting current into the ridge waveguide region.
Fig. 3 schematically illustrates a cross-sectional view of a phase-shifted multi-wavelength semiconductor laser unit according to an embodiment of the present invention.
As shown in fig. 3, the phase-shift multi-wavelength semiconductor laser further includes a silicon dioxide insulating layer 25, a P-plane metal 26, and an N-plane metal 27. The silicon dioxide insulating layer 25 covers the gain waveguide P-type epitaxial layer 15 and the ridge waveguide, and a strip-shaped electric window is arranged in a region opposite to the ridge waveguide; p-plane metal 26 grows in the strip-shaped electric window and on the silicon dioxide insulating layer 25, contacts with the ridge waveguide, and the patterned electrode realizes electric isolation; an N-face metal 27 is grown on the lower surface of the gain waveguide N-type epitaxial layer 13.
Fig. 4 schematically illustrates an array parallel arrangement of a plurality of laser units of a phase-shifted multi-wavelength semiconductor laser according to an embodiment of the present invention.
As shown in fig. 4, when the number of laser units is greater than 1, ridge waveguides of the respective laser units are arranged parallel to each other on the same substrate. The laser units with different taper angles of the plurality of tapered grating areas 1 are arranged on the same substrate material in an array type in parallel, and the taper angles of the tapered grating areas 1 of different ridge waveguides are different, so that the number of output wavelengths can be increased. In this embodiment, the laser units with 4 tapered grating regions having different tapers are arranged in parallel in an array on the same InP substrate material, so that 16 wavelength output can be achieved.
The invention also provides a preparation method which is applied to the phase-shift multi-wavelength semiconductor laser.
Fig. 5 schematically shows a flow chart of a method for manufacturing a phase-shifted multi-wavelength semiconductor laser according to an embodiment of the invention.
As shown in FIG. 5, the preparation method comprises S1-S2.
S1, growing a silicon dioxide mask layer on the gain waveguide P-type epitaxial layer 15 of the substrate, and etching silicon dioxide by taking photoresist as a mask to form a silicon dioxide mask.
S2, etching the gain waveguide P-type epitaxial layer 15 based on a silicon dioxide mask, and forming at least one ridge waveguide on the upper surface of the gain waveguide P-type epitaxial layer 15, wherein each ridge waveguide and the substrate form a laser unit; wherein the ridge waveguide comprises a tapered grating region 1, a wide straight waveguide region 2 and a narrow straight waveguide region 3, the tapered grating region 1 comprises N surface higher order grating regions and N-1 lambda/4 phase shift regions. And after the ridge waveguide is etched, removing the etching residual silicon dioxide mask layer.
Further, the method further comprises S3-S6.
And S3, growing a silicon dioxide insulating layer 25 on the gain waveguide P-type epitaxial layer 15 and the ridge waveguide, photoetching and etching the strip-shaped electric window.
And S4, growing P-surface metal 26 on the upper surface of the silicon dioxide insulating layer 25 and in the strip-shaped electric window, photoetching and corroding the metal, and patterning the electrode to realize electric isolation.
S5, thinning, grinding and polishing the gain waveguide N-type epitaxial layer 13 of the substrate, and growing N-face metal 27.
S6, dicing and cleaving the packaging substrate and the ridge waveguide to obtain the phase-shift multi-wavelength semiconductor laser.
According to practical requirements, when the phase-shifting multi-wavelength semiconductor laser is required to generate laser light with multiple wavelengths with uniform wavelength intervals, the preparation of the phase-shifting multi-wavelength semiconductor laser also comprises the step of adjusting a silicon dioxide mask so as to adjust the number of ridge waveguides on a substrate and the structure of a conical grating area 1 on the ridge waveguides, so that each laser unit is compactly arranged and laser light meeting the requirements can be generated. The method comprises S701-S703.
S701, adjusting the groove width, the groove spacing, the groove number and the groove depth of the surface high-order grating to adjust the output center laser wavelength of the ridge waveguide;
s702, adjusting the number of lambda/4 phase shift regions in the ridge waveguide to adjust the number of wavelengths of laser output by the ridge waveguide; and/or
S703, adjusting the taper of the tapered grating region 1 in the ridge waveguide to adjust the wavelength interval of the laser output by the ridge waveguide.
The preparation process of the phase-shift multi-wavelength semiconductor laser provided by the embodiment of the invention can be realized only by a common photoetching technology without expensive high-precision photoetching, and does not need a complex re-epitaxial growth step, thereby greatly reducing the preparation cost of the multi-wavelength semiconductor laser and simplifying the preparation process of the multi-wavelength semiconductor laser.
Those skilled in the art will appreciate that the features recited in the various embodiments of the invention can be combined in a variety of combinations and/or combinations, even if such combinations or combinations are not explicitly recited in the present invention. In particular, the features recited in the various embodiments of the invention can be combined and/or combined in various ways without departing from the spirit and teachings of the invention. All such combinations and/or combinations fall within the scope of the invention.
While the invention has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended embodiments and equivalents thereof. Thus, the scope of the invention should not be limited to the embodiments described above, but should be determined not only by the appended embodiments, but also by equivalents of the appended embodiments.
Claims (10)
1. A phase-shifted multi-wavelength semiconductor laser, comprising:
at least one laser unit comprising a substrate and a ridge waveguide;
the ridge waveguide comprises a conical grating region (1), a wide straight waveguide region (2) and a narrow straight waveguide region (3);
a tapered grating region (1) comprising N surface higher order grating regions and N-1 lambda/4 phase shift regions, the N surface higher order grating regions being separated by the N-1 lambda/4 phase shift regions, the widths of the N surface higher order grating regions and the lambda/4 phase shift regions being narrowed from wide to narrow in an order of arrangement, N being an integer greater than 1;
a wide straight waveguide area (2) connected with the wide end of the tapered grating area (1);
a narrow straight waveguide region (3) connected to the narrow end of the tapered grating region (1);
the upper surface of the ridge waveguide is provided with a strip-shaped electric injection window, and the narrow straight waveguide area (3) is a laser output end.
2. The phase-shifted multi-wavelength semiconductor laser of claim 1, wherein the λ/4 phase shifting region has a width twice a groove pitch width of the surface higher order grating.
3. The phase-shifted multi-wavelength semiconductor laser of claim 1, wherein when the number of laser units is greater than 1, the ridge waveguides of each of the laser units are arranged parallel to each other on the same substrate.
4. A phase-shifted multi-wavelength semiconductor laser as claimed in claim 3, wherein the taper of the tapered grating region (1) of the ridge waveguide differs from one another.
5. The phase-shifted multi-wavelength semiconductor laser according to claim 1, wherein the width and length of the narrow straight waveguide region (3) meet single-mode stable output conditions.
6. The phase-shifting multi-wavelength semiconductor laser according to claim 1, wherein the substrate comprises, in order from bottom to top, a gain waveguide N-type epitaxial layer (13), an active layer (14), and a gain waveguide P-type epitaxial layer (15), and the ridge waveguide is etched on a surface of the gain waveguide P-type epitaxial layer (15).
7. The phase-shifted multi-wavelength semiconductor laser of claim 6, further comprising:
a silicon dioxide insulating layer (25) which covers the gain waveguide P-type epitaxial layer (15) and the ridge waveguide, and a strip-shaped electric window is arranged in a region opposite to the ridge waveguide;
p-plane metal (26) grown in the strip-shaped electric window and on the silicon dioxide insulating layer (25) and in contact with the ridge waveguide;
and the N-face metal (27) is grown on the lower surface of the gain waveguide N-type epitaxial layer (13).
8. A method of manufacturing a phase-shifted multi-wavelength semiconductor laser according to any one of claims 1 to 7, comprising:
growing a silicon dioxide mask layer on the gain waveguide P-type epitaxial layer (15) of the substrate, and etching silicon dioxide by taking photoresist as a mask to form a silicon dioxide mask;
etching the gain waveguide P-type epitaxial layer (15) based on the silicon dioxide mask, and forming at least one ridge waveguide on the upper surface of the gain waveguide P-type epitaxial layer (15), wherein each ridge waveguide and the substrate form a laser unit;
the ridge waveguide comprises a conical grating region (1), a wide straight waveguide region (2) and a narrow straight waveguide region (3), wherein the conical grating region (1) comprises N surface high-order grating regions and N-1 lambda/4 phase shift regions.
9. The method of manufacturing according to claim 8, further comprising:
adjusting the silicon dioxide mask, comprising:
the groove width, the groove spacing, the groove number and the groove depth of the surface high-order grating are adjusted to adjust the output center laser wavelength of the ridge waveguide;
adjusting the number of lambda/4 phase shift regions in the ridge waveguide to adjust the number of wavelengths of laser output by the ridge waveguide;
and adjusting the taper of a tapered grating region (1) in the ridge waveguide to adjust the wavelength interval of laser output by the ridge waveguide.
10. The method of manufacturing according to claim 9, characterized in that the method of manufacturing further comprises:
growing a silicon dioxide insulating layer (25) on the gain waveguide P-type epitaxial layer (15) and the ridge waveguide, photoetching and etching a strip-shaped electric window;
growing P-plane metal (26) on the upper surface of the silicon dioxide insulating layer (25) and in the strip-shaped electric window;
thinning, grinding and polishing the gain waveguide N-type epitaxial layer (13) of the substrate, and growing N-face metal (27);
dicing and cleaving the substrate and the ridge waveguide to obtain the phase-shifted multi-wavelength semiconductor laser.
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| CN202310960425.6A CN116683291B (en) | 2023-08-02 | 2023-08-02 | Phase shift multi-wavelength semiconductor laser and preparation method thereof |
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| CN202310960425.6A CN116683291B (en) | 2023-08-02 | 2023-08-02 | Phase shift multi-wavelength semiconductor laser and preparation method thereof |
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| CN116683291B true CN116683291B (en) | 2023-10-03 |
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| CN202310960425.6A Active CN116683291B (en) | 2023-08-02 | 2023-08-02 | Phase shift multi-wavelength semiconductor laser and preparation method thereof |
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| CN101023569A (en) * | 2004-07-16 | 2007-08-22 | 爱尔兰国家大学科克学院 | Method for designing a semiconductor laser with intracavity reflecting features, semiconductor laser and method of fabrication thereof |
| CN101083385A (en) * | 2006-05-30 | 2007-12-05 | 恩益禧电子股份有限公司 | Distributed feedback laser diode |
| CN102916340A (en) * | 2012-02-08 | 2013-02-06 | 南京大学 | Phase-shift electric-control sampling grating semiconductor laser and setting method therefor |
| CN103594924A (en) * | 2013-10-16 | 2014-02-19 | 南京威宁锐克信息技术有限公司 | Laser manufactured through asymmetric phase-shift Bragg grating based on reconstruction and equivalent chirp technology and manufacturing method |
| CN216436388U (en) * | 2021-12-31 | 2022-05-03 | 上海频准激光科技有限公司 | Single-frequency distributed feedback fiber laser |
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| CN106848835B (en) * | 2016-12-22 | 2020-04-28 | 华中科技大学 | DFB laser based on surface grating |
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| CN101083385A (en) * | 2006-05-30 | 2007-12-05 | 恩益禧电子股份有限公司 | Distributed feedback laser diode |
| CN102916340A (en) * | 2012-02-08 | 2013-02-06 | 南京大学 | Phase-shift electric-control sampling grating semiconductor laser and setting method therefor |
| CN103594924A (en) * | 2013-10-16 | 2014-02-19 | 南京威宁锐克信息技术有限公司 | Laser manufactured through asymmetric phase-shift Bragg grating based on reconstruction and equivalent chirp technology and manufacturing method |
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