CN116682901A - Light emitting component, manufacturing method of light emitting component, light emitting chip and display panel - Google Patents
Light emitting component, manufacturing method of light emitting component, light emitting chip and display panel Download PDFInfo
- Publication number
- CN116682901A CN116682901A CN202310743320.5A CN202310743320A CN116682901A CN 116682901 A CN116682901 A CN 116682901A CN 202310743320 A CN202310743320 A CN 202310743320A CN 116682901 A CN116682901 A CN 116682901A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- light
- substrate
- emitting
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 133
- 238000003860 storage Methods 0.000 claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims description 58
- 230000000694 effects Effects 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 95
- 238000000034 method Methods 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 238000002161 passivation Methods 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 10
- 238000004891 communication Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The application provides a light-emitting assembly, which comprises a plurality of light-emitting chips and a primary substrate, wherein the light-emitting chips are arranged on one side of the primary substrate, a plurality of gas storage grooves are formed in one side of the primary substrate facing the light-emitting chips, and each light-emitting chip covers the plurality of gas storage grooves, wherein when the light-emitting chips are peeled off from the primary substrate, target gas is generated at the joint of the light-emitting chips and the primary substrate, and the gas storage grooves are used for storing the target gas so as to relieve the stress effect of the target gas in the light-emitting chips, further avoid the problems of crystal breakage and brittle fracture of the light-emitting chips, and further improve the peeling and transferring efficiency of the light-emitting chips. The application also provides a manufacturing method of the light-emitting component, a light-emitting chip and a display panel.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a light emitting device, a method for manufacturing the light emitting device, a light emitting chip, and a display panel having the light emitting chip.
Background
With the development of display technology, a Micro Light-Emitting Diode (Micro LED) display device is known as a new generation display technology because of its advantages of higher brightness, high luminous efficiency, low power consumption, long service life, and the like.
In the prior art, in the process of stripping a Micro LED chip from a primary substrate by laser, an epitaxial gallium nitride (GaN) layer is decomposed to form gallium (Ga) and nitrogen (N) 2 ) Because nitrogen can not effectively release in Micro LED chip, can cause the great stress of Micro LED chip internal production, lead to Micro LED chip to appear breaking the brilliant, appear brittle failure even, and then influence Micro LED chip's peeling off transfer efficiency.
In view of this, how to solve the problem that in the prior art, the Micro LED chip is broken and brittle due to the fact that nitrogen cannot be released from the Micro LED chip effectively in the laser peeling process is a urgent need of those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present application aims to provide a light emitting component, a manufacturing method of the light emitting component, a light emitting chip and a display panel with the light emitting chip, which aims to solve the problems of crystal breaking and brittle failure of the light emitting chip caused by that nitrogen cannot be effectively released when the light emitting chip is stripped by laser in the prior art.
In order to solve the technical problems, the application provides a light-emitting assembly, which comprises a plurality of light-emitting chips and a primary substrate, wherein the light-emitting chips are arranged on one side of the primary substrate, a plurality of gas storage grooves are formed on one side of the primary substrate facing the light-emitting chips, each light-emitting chip covers the plurality of gas storage grooves, and when the light-emitting chips are stripped from the primary substrate, a target gas is generated at the joint of the light-emitting chips and the primary substrate, and the gas storage grooves are used for storing the target gas.
In summary, the light emitting assembly provided by the embodiment of the application includes a plurality of light emitting chips and a primary substrate, the light emitting chips are disposed on one side of the primary substrate, and a plurality of gas storage grooves are formed on one side of the primary substrate facing the light emitting chips, wherein when the light emitting chips are peeled off from the primary substrate, a target gas is generated at a connection position between the light emitting chips and the primary substrate, and the gas storage grooves are used for storing the target gas so as to relieve a stress effect generated by the target gas in the light emitting chips, thereby avoiding the problems of crystal breakage and brittle failure of the light emitting chips, and further improving the peeling and transferring efficiency of the light emitting chips.
In an exemplary embodiment, the diameter of the opening of the gas storage groove is less than or equal to 0.1um.
In an exemplary embodiment, a pitch between adjacent ones of the gas storage grooves is less than or equal to 1um.
In an exemplary embodiment, a sum of volumes of the plurality of gas storage grooves covered by the light emitting chip is greater than or equal to 50% of a volume of the target gas and less than or equal to the volume of the target gas.
In an exemplary embodiment, the overall shape of the gas storage groove is a cylinder groove, a prism groove, a circular table groove, a prism groove, or a sphere groove.
In an exemplary embodiment, the light emitting chip includes a first semiconductor component for providing electrons to the light emitting layer, a light emitting layer for providing holes to the light emitting layer, and a second semiconductor component for recombining electrons and holes and emitting light, which are stacked on the native substrate.
In an exemplary embodiment, the first semiconductor component includes a buffer layer and a first semiconductor layer that are stacked, the buffer layer is disposed on a side of the primary substrate where the gas storage groove is formed, the first semiconductor layer is disposed on a side of the buffer layer opposite to the primary substrate, and the light emitting layer is disposed on a side of the first semiconductor layer opposite to the buffer layer.
Based on the same inventive concept, the embodiment of the present application further provides a method for manufacturing a light emitting assembly, where the method for manufacturing a light emitting assembly is used for manufacturing the light emitting assembly, and the method includes:
providing a primary substrate;
a plurality of gas storage grooves are formed in one side of the primary substrate;
one side of the primary substrate provided with the gas storage grooves is provided with a plurality of light-emitting chips, each light-emitting chip covers a plurality of the gas storage grooves, and the primary substrate and the light-emitting chips form the light-emitting assembly.
In summary, the method for manufacturing the light emitting component provided by the embodiment of the application includes: providing a primary substrate; a plurality of gas storage grooves are formed in one side of the primary substrate; one side of the primary substrate provided with the gas storage grooves is provided with a plurality of light-emitting chips, each light-emitting chip covers a plurality of the gas storage grooves, and the primary substrate and the light-emitting chips form the light-emitting assembly. When the light-emitting chip is peeled off from the original substrate, the joint of the light-emitting chip and the original substrate generates target gas, and the gas storage groove is used for storing the target gas so as to relieve the stress effect of the target gas in the light-emitting chip, thereby avoiding the problems of crystal breaking and brittle fracture of the light-emitting chip and further improving the peeling and transferring efficiency of the light-emitting chip.
Based on the same inventive concept, the embodiment of the application also provides a light emitting chip, which is formed by peeling the original substrate from the light emitting assembly.
In summary, the light emitting chip provided by the embodiment of the application is formed by peeling the primary substrate from the light emitting component, the light emitting component comprises a plurality of light emitting chips and a primary substrate, the light emitting chips are arranged on one side of the primary substrate, and a plurality of gas storage grooves are formed on one side of the primary substrate facing the light emitting chips, wherein when the light emitting chips are peeled from the primary substrate, the connection parts of the light emitting chips and the primary substrate generate target gas, and the gas storage grooves are used for storing the target gas so as to relieve the stress effect generated by the target gas in the light emitting chips, thereby avoiding the problems of crystal failure and brittle failure of the light emitting chips and improving the peeling and transferring efficiency of the light emitting chips.
Based on the same inventive concept, the embodiment of the application also provides a display panel, which comprises a driving substrate and the light emitting chips, wherein a plurality of the light emitting chips are arranged on one side of the driving substrate and are electrically connected with the driving substrate.
In summary, the display panel provided by the embodiment of the application includes a driving substrate and a light emitting chip, wherein the light emitting chip is formed by peeling the primary substrate from a light emitting component, the light emitting component includes a plurality of light emitting chips and a primary substrate, the light emitting chips are disposed on one side of the primary substrate, and a plurality of gas storage grooves are formed on one side of the primary substrate facing the light emitting chips, wherein when the light emitting chips are peeled from the primary substrate, a target gas is generated at a connection position between the light emitting chips and the primary substrate, and the gas storage grooves are used for storing the target gas so as to relieve stress effect generated in the light emitting chips by the target gas, thereby avoiding the problems of crystal breakage and brittle fracture of the light emitting chips and improving peeling and transferring efficiency of the light emitting chips.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic layer structure of a light emitting device according to a first embodiment of the present application;
fig. 2 is a schematic layer structure of a light emitting chip according to a second embodiment of the present application;
fig. 3 is a schematic layer structure of a display panel according to a third embodiment of the present application;
fig. 4 is a schematic layer structure of a display device according to a fourth embodiment of the present application;
FIG. 5 is a flowchart illustrating a method for fabricating a light emitting device according to a fifth embodiment of the present application;
fig. 6 is a schematic structural diagram corresponding to step S20 of a manufacturing method of a light emitting device according to a fifth embodiment of the present application.
Reference numerals illustrate:
10-a primary substrate; 11-gas storage tanks; 20-a light emitting chip; 21-a first semiconductor component; 21 a-a buffer layer; 21 b-a first semiconductor layer; 22-a light emitting layer; 23-a second semiconductor component; 100-a light emitting assembly; 25-passivation structures; 25 a-a first opening; 25 b-a second opening; 27-a first electrode; 28-a second electrode; 100-a light emitting assembly; 300-driving the substrate; 400-a display panel; 500-a housing; 600-display device; S10-S30-manufacturing method of the luminous component.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the application. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
The following description of the embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the application may be practiced. The numbering of the components itself, e.g. "first", "second", etc., is used herein merely to distinguish between the described objects and does not have any sequential or technical meaning. The term "coupled" as used herein includes both direct and indirect coupling (coupling), unless otherwise indicated. Directional terms, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "side", etc., in the present application are merely referring to the directions of the attached drawings, and thus, directional terms are used for better, more clear explanation and understanding of the present application, rather than indicating or implying that the apparatus or element being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; may be a mechanical connection; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art. It should be noted that the terms "first," "second," and the like in the description and claims of the present application and in the drawings are used for distinguishing between different objects and not for describing a particular sequential order.
Furthermore, the terms "comprises," "comprising," "includes," "including," or "having," when used in this specification, are intended to specify the presence of stated features, operations, elements, etc., but do not limit the presence of one or more other features, operations, elements, etc., but are not limited to other features, operations, elements, etc. Furthermore, the terms "comprises" or "comprising" mean that there is a corresponding feature, number, operation, element, component, or combination thereof disclosed in the specification, and that there is no intention to exclude the presence or addition of one or more other features, numbers, operations, elements, components, or combinations thereof. Furthermore, when describing embodiments of the application, use of "may" means "one or more embodiments of the application. Also, the term "exemplary" is intended to refer to an example or illustration.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Referring to fig. 1, fig. 1 is a schematic layer structure of a light emitting device according to a first embodiment of the present application. The light emitting assembly 100 provided in the first embodiment of the present application includes a primary substrate 10 and a plurality of light emitting chips 20, wherein the plurality of light emitting chips 20 are disposed on one side of the primary substrate 10. A plurality of air storage grooves 11 are formed in one side of the primary substrate 10 facing the light emitting chips 20, and each light emitting chip 20 covers a plurality of air storage grooves 11. When the light emitting chip 20 is peeled off from the original substrate 10, a target gas is generated at the junction of the light emitting chip 20 and the original substrate 10, and the gas storage tank 11 is used for storing the target gas.
It can be understood that in a Laser Lift-Off (LLO) technology for peeling the light emitting chip from the original substrate, laser is irradiated to the connection between the light emitting chip and the original substrate, so that the connection between the light emitting chip and the original substrate is decomposed, and the light emitting chip is separated from the original substrate. Because the light emitting chip is a gallium nitride (GaN) base light emitting chip, part of gallium nitride exists at the joint of the light emitting chip and the primary substrate, the gallium nitride can be decomposed into gallium and nitrogen (target gas) under the irradiation of laser, and if the nitrogen cannot be discharged, the joint of the light emitting chip and the primary substrate and the Mesa can be broken, even the brittle fracture occurs. According to the application, the plurality of gas storage grooves 11 for storing the target gas are formed on the primary substrate 10, so that the stress effect of the target gas in the light-emitting chip 20 is relieved, the problems of crystal breaking and brittle fracture of the light-emitting chip 20 are avoided, the peeling and transferring efficiency of the light-emitting chip 20 is improved, and particularly the peeling yield of the large-size light-emitting chip 20 is improved. The target gas of the present application may be nitrogen. During the stripping process, when the gas storage tank 11 communicates with the outside, the target gas in the gas storage tank 11 may be discharged.
In an exemplary embodiment, the shape of the opening of the air storage groove 11 may be circular, elliptical, or polygonal, and the present application is not particularly limited thereto. The diameter of the opening of the gas storage groove 11 is less than or equal to 0.1um, for example, 0.01um, 0.014um, 0.03um, 0.05um, 0.073um, 0.08um, 0.091um, 0.1um, or other values, which are not particularly limited by the present application.
It is understood that lattice defects may occur at the position of the primary substrate 10 where the gas storage groove 11 is formed, and if the diameter of the gas storage groove 11 is greater than 0.1um, the side of the light emitting chip 20 facing the primary substrate 10 may not form a lattice match with the primary substrate 10, thereby affecting the quality of the generated light emitting chip 20.
In an exemplary embodiment, the space between adjacent air storage slots 11 is less than or equal to 1um, for example, 0.1um, 0.25um, 0.4um, 0.5um, 0.67um, 0.84um, 0.91um, 1um, or other values, which the present application is not limited to.
It will be appreciated that if the interval between the adjacent gas storage grooves 11 is greater than 1um, a certain amount of target gas exists between the adjacent gas storage grooves 11, resulting in the occurrence of the breaking of the light emitting chip 20 corresponding to the position where the certain amount of target gas exists.
In an exemplary embodiment, the shape of the cross section of the gas storage groove 11 along the thickness direction of the original substrate 10 may be a circle, an ellipse, a polygon, or the like, to which the present application is not particularly limited. The gas storage groove 11 may have a cylindrical groove, prismatic groove, circular table groove, prismatic groove or spherical groove as a whole, which is not particularly limited in the present application. Wherein the groove is a portion of a spherical groove.
In the exemplary embodiment, the number of the gas storage grooves 11 covered by each of the light emitting chips 20 may be determined by the size of the light emitting chips 20, the size of the gas storage grooves 11, and the interval between the adjacent gas storage grooves 11, which is not particularly limited by the present application.
In an embodiment of the present application, the volume of the target gas released by gallium nitride is related to laser energy, and the stronger the laser energy applied to gallium nitride per unit area, the more gallium nitride is decomposed and the more the target gas is generated. The mass of decomposed gallium nitride m=k×l, where the magnitude of k is related to the film quality of gallium nitride and L is the laser energy. The sum of the volumes of the plurality of gas storage grooves 11 covered by the light emitting chip 20 may be greater than or equal to 50% of the volume of the target gas and less than or equal to the volume of the target gas, so that the stress generated by the target gas in the light emitting chip 20 can be effectively reduced.
It is understood that if the sum of the volumes of the plurality of gas storage grooves 11 covered by the light emitting chip 20 is less than 50% of the volume of the target gas, the effect of the plurality of gas storage grooves 11 to reduce the stress effect of the target gas generated in the light emitting chip 20 may be weak; if the sum of the volumes of the plurality of gas storage grooves 11 covered by the light emitting chip 20 is larger than the volume of the target gas, the vacant area of the primary substrate 10 is larger, and the structural strength of the primary substrate 10 is further affected.
In the embodiment of the present application, as shown in fig. 1, the light emitting chip 20 includes a first semiconductor device 21, a light emitting layer 22, and a second semiconductor device 23 sequentially stacked on the raw substrate 10, that is, the first semiconductor device 21 is disposed on a side of the raw substrate 10 where the gas storage groove 11 is formed, the light emitting layer 22 is disposed on a side of the first semiconductor device 21 opposite to the raw substrate 10, and the second semiconductor device 23 is disposed on a side of the light emitting layer 22 opposite to the first semiconductor device 21. The first semiconductor element 21 is configured to supply electrons to the light emitting layer 22, the second semiconductor element 23 is configured to supply holes to the light emitting layer 22, and the light emitting layer 22 is configured to recombine electrons and holes and emit light.
In the embodiment of the present application, the first semiconductor device 21 may be an N (Positive) type semiconductor, and the second semiconductor device 23 may be a P (Positive) type semiconductor.
In the embodiment of the application, referring to fig. 1, the first semiconductor device 21 includes a buffer layer 21a and a first semiconductor layer 21b stacked together, the buffer layer 21a is disposed on a side of the native substrate 10 where the gas storage groove 11 is formed, the first semiconductor layer 21b is disposed on a side of the buffer layer 21a opposite to the native substrate 10, and the light emitting layer 22 is disposed on a side of the first semiconductor layer 21b opposite to the buffer layer 21 a. The buffer layer 21a is used for avoiding lattice mismatch between the native substrate 10 and the first semiconductor component 21, and the first semiconductor layer 21b is used for providing electrons to the light emitting layer 22.
In an exemplary embodiment, the buffer layer 21a may be an undoped GaN layer, and the first semiconductor layer 21b may be a silicon (Si) -doped GaN layer.
In an exemplary embodiment, the second semiconductor device 23 may be a magnesium (Mg) -doped GaN layer, and the second semiconductor device 23 is configured to provide holes to the light emitting layer 22.
In an exemplary embodiment, the light emitting layer 22 may be a multiple quantum well (Multiple Quantum Well, MQW) layer.
In the embodiment of the present application, referring to fig. 1, the light emitting layer 22 is disposed on a portion of the first semiconductor layer 21b, that is, a portion of a side of the first semiconductor layer 21b opposite to the buffer layer 21a is covered by the light emitting layer 22.
In the embodiment of the present application, referring to fig. 1, the light emitting chip 20 further includes a passivation structure 25, wherein the passivation structure 25 is disposed on a peripheral side of the buffer layer 21a, a peripheral side of the first semiconductor layer 21b, a portion of the first semiconductor layer 21b facing away from the buffer layer 21a and not covered by the light emitting layer 22, a peripheral side of the second semiconductor component 23, and a side of the second semiconductor component 23 facing away from the light emitting layer 22. The passivation structure 25 has good physical passivation performance, and is used for isolating moisture, oxygen, dust and other impurities to protect the first semiconductor component 21, the light-emitting layer 22 and the second semiconductor component 23.
In an exemplary embodiment, the material of the passivation structure 25 may be silicon dioxide (SiO 2).
In an exemplary embodiment, referring to fig. 1, the passivation structure 25 is provided with a first opening 25a and a second opening 25b, the first opening 25a penetrates through the passivation structure 25, and is located at a portion of the first semiconductor layer 21b opposite to the buffer layer 21a and not covered by the light emitting layer 22, and a portion of the first semiconductor layer 21b is exposed from the first opening 25 a. The second opening 25b penetrates through the passivation structure 25 and is located on a side of the second semiconductor device 23 opposite to the light emitting layer 22, and a portion of the second semiconductor device 23 is exposed from the second opening 25 b.
In an exemplary embodiment, referring to fig. 1, the light emitting chip 20 further includes a first electrode 27 and a second electrode 28, wherein one end of the first electrode 27 is disposed in the first opening 25a and is connected to the first semiconductor layer 21b to achieve electrical connection, and one end of the second electrode 28 is disposed in the second opening 25b and is connected to the second semiconductor component 23 to achieve electrical connection.
In other embodiments of the present application, the light emitting chip 20 may further include a plurality of patterned substrates (Patterned Sapphire Substrate, PSS), where the buffer layer 21a of the first semiconductor component 21 covers the plurality of patterned substrates on the native substrate 10, and the patterned substrates are used to prevent the light emitted by the light emitting layer 22 from being totally reflected in the light emitting chip 20, so as to improve the light emitting efficiency of the light emitting chip 20.
In an exemplary embodiment, the Light Emitting chip 20 may be a Micro Light-Emitting Diode (Micro LED).
Based on the same inventive concept, a second embodiment of the present application provides a light emitting chip. Referring to fig. 2, fig. 2 is a schematic layer structure of a light emitting chip according to a second embodiment of the present application. The light emitting chip 20 is formed by removing the native substrate 10 from the light emitting assembly 100 through a lift-off process, and description of the same points of the light emitting chip 20 and the light emitting assembly 100 as described above with reference to the related description of the light emitting assembly 100 shown in fig. 1 is omitted herein.
In summary, the light emitting chip 20 provided in the embodiment of the application is formed by removing the native substrate 10 from the light emitting assembly 100 through a lift-off process, wherein the light emitting assembly 100 includes the native substrate 10 and a plurality of light emitting chips 20, and the plurality of light emitting chips 20 are disposed on one side of the native substrate 10. A plurality of air storage grooves 11 are formed in a side, facing the light emitting chips 20, of the primary substrate 10, and each light emitting chip 20 can cover a plurality of air storage grooves 11. When the light emitting chip 20 is peeled off from the primary substrate 10, a target gas (for example, nitrogen) is generated at the joint of the light emitting chip 20 and the primary substrate 10, and the generated target gas is stored in the plurality of gas storage grooves 11, so as to relieve the stress effect generated by the target gas in the light emitting chip 20, thereby avoiding the problems of crystal breaking and brittle fracture of the light emitting chip 20, and improving the peeling and transferring efficiency of the light emitting chip 20. Further, in the process of peeling the light emitting chip 20 from the raw substrate 10, the target gas stored in the plurality of gas storage grooves 11 may be simultaneously discharged to the outside.
Based on the same inventive concept, a third embodiment of the present application provides a display panel. Referring to fig. 3, fig. 3 is a schematic layer structure of a display panel according to a third embodiment of the application. The display panel 400 provided in the embodiment of the application includes a driving substrate 300 and a plurality of the light emitting chips 20, where the plurality of light emitting chips 20 are disposed on one side of the driving substrate 300 and electrically connected to the driving substrate 300, and the driving substrate 300 is configured to transmit electrical signals to the plurality of light emitting chips 20 to control the plurality of light emitting chips 20 to emit light. Since the embodiments shown in fig. 1 and fig. 2 have been described in more detail, the light emitting assembly 100 and the light emitting chip 20 are not described in detail herein.
In an exemplary embodiment, the first electrode 27 and the second electrode 28 of the light emitting chip 20 are connected to the driving substrate 300 to achieve electrical connection. The light emitting chip 20 and the driving substrate 300 may be bonded through a soldering process.
It will be appreciated that the display panel may be used in an electronic device such as a cell phone, tablet computer, wearable electronic device with wireless communication capability (e.g., smart watch), etc., that includes functionality such as a personal digital assistant (Personal Digital Assistant, PDA) and/or a music player. The electronic device may also be other electronic means, such as a Laptop computer (Laptop) or the like having a touch sensitive surface, e.g. a touch panel. In some embodiments, the electronic device may have a communication function, that is, may establish communication with a network through a communication manner that may occur in 2G (second generation mobile phone communication specification), 3G (third generation mobile phone communication specification), 4G (fourth generation mobile phone communication specification), 5G (fifth generation mobile phone communication specification), or W-LAN (wireless local area network) or in future. For the sake of brevity, this embodiment of the present application is not further limited.
In summary, the display panel 400 provided in the embodiment of the application includes the driving substrate 300 and the light emitting chips 20, the light emitting chips 20 are formed by removing the native substrate 10 from the light emitting assembly 100 through a lift-off process, the light emitting assembly 100 includes the native substrate 10 and a plurality of light emitting chips 20, and the plurality of light emitting chips 20 are disposed on one side of the native substrate 10. The primary substrate 10 is provided with a plurality of air storage grooves 11 on one side facing the light emitting chips 20, and each light emitting chip 20 can cover a plurality of air storage grooves 11. When the light emitting chip 20 is peeled off from the primary substrate 10, a target gas (such as nitrogen) is generated at the joint of the light emitting chip 20 and the primary substrate 10, and the generated target gas is stored in the plurality of gas storage grooves 11, so as to relieve the stress effect generated by the target gas in the light emitting chip 20, further avoid the problems of crystal breaking and brittle fracture of the light emitting chip 20, and improve the peeling and transferring efficiency of the light emitting chip 20.
Based on the same inventive concept, the embodiment of the application also provides a display device. Referring to fig. 4, fig. 4 is a schematic layer structure of a display device according to a fourth embodiment of the application. The display device 600 provided by the embodiment of the application includes a housing 500 and the display panel 400, wherein the display panel 400 is disposed in the housing 500, and the light emitting side of the display panel 400 is exposed out of the housing 500. Since the embodiments shown in fig. 1 to 3 have been described in more detail, the light emitting assembly 100, the light emitting chip 20 and the display panel 400 are not described in detail.
It is understood that the display device 600 may be used in electronic devices including, but not limited to, televisions, tablet computers, notebook computers, desktop computers, mobile phones, in-vehicle displays, smart watches, smart bracelets, smart glasses, and the like. According to the embodiment of the present application, the specific type of the display device 600 is not particularly limited, and a person skilled in the art can correspondingly design according to the specific use requirement of the display device 600, which is not described herein.
In an exemplary embodiment, the display device 600 may further include other necessary components and constituent parts such as a display module, a power panel, a high-voltage board, and a key control board, which can be correspondingly supplemented by those skilled in the art according to the specific type and actual function of the display device 600, and will not be described herein.
In summary, the display device 600 provided by the embodiment of the application includes the housing 500 and the display panel 400, the display panel 400 includes the driving substrate 300 and the light emitting chips 20, the light emitting chips 20 are formed by removing the native substrate 10 from the light emitting assembly 100 through the peeling process, the light emitting assembly 100 includes the native substrate 10 and a plurality of light emitting chips 20, and the plurality of light emitting chips 20 are disposed on one side of the native substrate 10. The primary substrate 10 is provided with a plurality of air storage grooves 11 on one side facing the light emitting chips 20, and each light emitting chip 20 can cover a plurality of air storage grooves 11. When the light emitting chip 20 is peeled off from the primary substrate 10, a target gas (such as nitrogen) is generated at the joint of the light emitting chip 20 and the primary substrate 10, and the generated target gas is stored in the plurality of gas storage grooves 11, so as to relieve the stress effect generated by the target gas in the light emitting chip 20, further avoid the problems of crystal breaking and brittle fracture of the light emitting chip 20, and improve the peeling and transferring efficiency of the light emitting chip 20.
Based on the same inventive concept, the embodiment of the present application further provides a method for manufacturing a light emitting assembly, where the method for manufacturing a light emitting assembly shown in fig. 1 is the same as the method for manufacturing a light emitting assembly, and the description of the light emitting assembly in the embodiment shown in fig. 1 is omitted herein. Referring to fig. 5, fig. 5 is a flowchart illustrating a method for manufacturing a light emitting device according to a fifth embodiment of the present application, wherein the method for manufacturing a light emitting device includes the following steps.
S10, providing a primary substrate 10.
In an exemplary embodiment, the native substrate 10 may be a sapphire substrate.
S20, a plurality of air storage grooves 11 are formed in one side of the original substrate 10.
Specifically, referring to fig. 6, fig. 6 is a schematic structural diagram corresponding to step S20 of a manufacturing method of a light emitting device according to a fifth embodiment of the present application. A plurality of the gas storage grooves 11 are formed on one side of the original substrate 10 by chemical etching. The chemical etching may be performed by applying a strong acid etching solution containing hydrogen fluoride or the like to one side of the raw substrate 10.
S30, forming a plurality of light emitting chips 20 on one side of the primary substrate 10, on which the air storage grooves 11 are formed, wherein each light emitting chip 20 covers a plurality of the air storage grooves 11, and the primary substrate 10 and the light emitting chips 20 form the light emitting assembly 100.
Specifically, referring to fig. 1, a plurality of first semiconductor devices 21, a plurality of light emitting layers 22, and a plurality of second semiconductor devices 23 are sequentially formed on a side of the native substrate 10 where the gas storage groove 11 is formed, wherein the first semiconductor devices 21, the light emitting layers 22, and the second semiconductor devices 23 form the light emitting chip 20, and the native substrate 10 and the plurality of light emitting chips 20 form the light emitting device 100.
In an exemplary embodiment, the first semiconductor assembly 21, the light emitting layer 22, and the second semiconductor assembly 23 may be generated through a Metal-organic chemical vapor deposition (Metal-Organic Chemical Vapor Deposition, MOCVD) process.
In the embodiment of the present application, after the second semiconductor device 23 is formed, a plurality of passivation structures 25, a plurality of first electrodes 27 and a plurality of second electrodes 28 are formed, and the related descriptions of the passivation structures 25, the first electrodes 27 and the second electrodes 28 are referred to the related description of the light emitting chip 20 of the first embodiment, which is not repeated herein.
In an exemplary embodiment, the plurality of light emitting chips 20 on the native substrate 10 are peeled Off by a Laser Lift-Off (LLO) technique.
In summary, the method for manufacturing the light emitting component provided by the embodiment of the application includes: providing a primary substrate 10; a plurality of air storage grooves 11 are formed on one side of the primary substrate 10; a plurality of light emitting chips 20 are formed on one side of the primary substrate 10 where the air storage grooves 11 are formed, each light emitting chip 20 covers a plurality of the air storage grooves 11, and the primary substrate 10 and the plurality of light emitting chips 20 form the light emitting assembly 100. When the light emitting chip 20 is peeled off from the primary substrate 10, a target gas (such as nitrogen) is generated at the joint of the light emitting chip 20 and the primary substrate 10, and the generated target gas is stored in the plurality of gas storage grooves 11, so as to relieve the stress effect generated by the target gas in the light emitting chip 20, further avoid the problems of crystal breaking and brittle fracture of the light emitting chip 20, and improve the peeling and transferring efficiency of the light emitting chip 20.
The flow chart described in the present application is merely one embodiment, and many modifications may be made to this illustration or the steps in the present application without departing from the spirit of the application. For example, the steps may be performed in a differing order, or steps may be added, deleted or modified. Those skilled in the art will recognize that the full or partial flow of the embodiments described above can be practiced and equivalent variations of the embodiments of the present application are within the scope of the appended claims.
It should be appreciated that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present application, the meaning of "plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, reference is made to the description of the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., meaning that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
It is to be understood that the application is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims. Those skilled in the art will recognize that the full or partial flow of the embodiments described above can be practiced and equivalent variations of the embodiments of the present application are within the scope of the appended claims.
Claims (10)
1. The utility model provides a light emitting component, includes a plurality of light emitting chips, its characterized in that, light emitting component still includes the primary base plate, a plurality of light emitting chips set up in one side of primary base plate, the primary base plate is facing one side of light emitting chips has seted up a plurality of gas tanks, every light emitting chips covers a plurality of the gas tank, wherein, when light emitting chips follow the primary base plate peels off, the light emitting chips with the junction of primary base plate produces the target gas, the gas tank is used for the storage the target gas.
2. The lighting assembly of claim 1 wherein the opening of the air reservoir has a diameter of less than or equal to 0.1um.
3. The lighting assembly of claim 1 wherein the spacing between adjacent air reservoirs is less than or equal to 1um.
4. The light emitting assembly of claim 1 wherein a sum of volumes of the plurality of gas storage slots covered by the light emitting chip is greater than or equal to 50% of a volume of the target gas and less than or equal to the volume of the target gas.
5. The light emitting assembly of any one of claims 1-4 wherein the gas storage groove has an overall shape of a cylinder groove, a prism groove, a circular table groove, a prism groove, or a sphere groove.
6. The light-emitting device according to any one of claims 1 to 4, wherein the light-emitting chip includes a first semiconductor device for supplying electrons to the light-emitting layer, a light-emitting layer for supplying holes to the light-emitting layer, and a second semiconductor device for recombining electrons and holes and emitting light, which are stacked on the native substrate.
7. The light emitting device of claim 6, wherein the first semiconductor device comprises a buffer layer and a first semiconductor layer stacked on each other, the buffer layer is disposed on a side of the primary substrate where the gas storage groove is formed, the first semiconductor layer is disposed on a side of the buffer layer opposite to the primary substrate, and the light emitting layer is disposed on a side of the first semiconductor layer opposite to the buffer layer.
8. A method of manufacturing a light emitting assembly, wherein the method of manufacturing a light emitting assembly is used to manufacture a light emitting assembly according to any one of claims 1-7, comprising:
providing a primary substrate;
a plurality of gas storage grooves are formed in one side of the primary substrate;
one side of the primary substrate provided with the gas storage grooves is provided with a plurality of light-emitting chips, each light-emitting chip covers a plurality of the gas storage grooves, and the primary substrate and the light-emitting chips form the light-emitting assembly.
9. A light-emitting chip, characterized in that the light-emitting chip is formed by peeling the green substrate from the light-emitting element according to any one of claims 1 to 7.
10. A display panel, characterized in that the display panel comprises a driving substrate and a plurality of light emitting chips as claimed in claim 9, the plurality of light emitting chips being disposed on one side of the driving substrate and electrically connected to the driving substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310743320.5A CN116682901A (en) | 2023-06-21 | 2023-06-21 | Light emitting component, manufacturing method of light emitting component, light emitting chip and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310743320.5A CN116682901A (en) | 2023-06-21 | 2023-06-21 | Light emitting component, manufacturing method of light emitting component, light emitting chip and display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116682901A true CN116682901A (en) | 2023-09-01 |
Family
ID=87785428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310743320.5A Pending CN116682901A (en) | 2023-06-21 | 2023-06-21 | Light emitting component, manufacturing method of light emitting component, light emitting chip and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116682901A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117457816A (en) * | 2023-12-12 | 2024-01-26 | 惠科股份有限公司 | Transfer substrate, display panel, display device and mass transfer method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001176813A (en) * | 1999-12-15 | 2001-06-29 | Nichia Chem Ind Ltd | Method for manufacturing nitride semiconductor substrate |
| JP2005057220A (en) * | 2003-08-07 | 2005-03-03 | Sony Corp | Semiconductor optical element and its manufacturing method |
| CN102751397A (en) * | 2011-04-22 | 2012-10-24 | 比亚迪股份有限公司 | Laser lift-off method of sapphire pattern substrate |
| CN115832117A (en) * | 2021-09-16 | 2023-03-21 | 重庆康佳光电技术研究院有限公司 | Chip transfer method and display panel |
-
2023
- 2023-06-21 CN CN202310743320.5A patent/CN116682901A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001176813A (en) * | 1999-12-15 | 2001-06-29 | Nichia Chem Ind Ltd | Method for manufacturing nitride semiconductor substrate |
| JP2005057220A (en) * | 2003-08-07 | 2005-03-03 | Sony Corp | Semiconductor optical element and its manufacturing method |
| CN102751397A (en) * | 2011-04-22 | 2012-10-24 | 比亚迪股份有限公司 | Laser lift-off method of sapphire pattern substrate |
| CN115832117A (en) * | 2021-09-16 | 2023-03-21 | 重庆康佳光电技术研究院有限公司 | Chip transfer method and display panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117457816A (en) * | 2023-12-12 | 2024-01-26 | 惠科股份有限公司 | Transfer substrate, display panel, display device and mass transfer method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104022216B (en) | Light emitting device | |
| CN102194958B (en) | Luminescent device and light emitting device package | |
| EP2595204A2 (en) | Light emitting diode and light emitting apparatus having the same | |
| CN110739376B (en) | LED chip, display screen module and manufacturing method thereof | |
| US20220367771A1 (en) | Display device using micro led, and manufacturing method therefor | |
| CN112768484B (en) | Light emitting diode and manufacturing method thereof | |
| CN101855733A (en) | Light emitting device and method for fabricating the same | |
| CN116682901A (en) | Light emitting component, manufacturing method of light emitting component, light emitting chip and display panel | |
| CN1953223A (en) | Nitride semiconductor light emitting device for flip-chip | |
| JP5431259B2 (en) | LIGHT EMITTING ELEMENT PACKAGE AND ITS MANUFACTURING METHOD, LIGHT EMITTING ELEMENT ARRAY, AND DISPLAY DEVICE | |
| US20230014515A1 (en) | Display device using micro led and manufacturing method thereof | |
| CN116682912B (en) | Light emitting chip, display panel, light emitting assembly and manufacturing method thereof | |
| CN112652617A (en) | Preparation method of novel Micro-LED display device | |
| CN114899298B (en) | Pixel unit and manufacturing method thereof, micro display screen and discrete device | |
| CN110676355B (en) | Method for manufacturing light-emitting element | |
| CN111129062B (en) | LED display module, LED display screen and manufacturing method | |
| US8420418B2 (en) | Light-emitting device and manufacturing method thereof | |
| CN115207186A (en) | Mini-LED chip and preparation method thereof | |
| EP3836216B1 (en) | Display device using semiconductor light-emitting diodes | |
| US11302852B2 (en) | Display panel and method of manufacturing display panel | |
| US20220302352A1 (en) | Mini light-emitting diode chip and manufacturing method thereof | |
| CN114725080A (en) | Light emitting unit, display device and preparation method thereof | |
| CN102214758A (en) | Light emitting device, method for fabricating the light emitting device, and light emitting device package | |
| CN113451466B (en) | LED chip, preparation method, backlight module and display screen | |
| US20240213295A1 (en) | Light-emitting device and light-emitting apparatus including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |