CN116676082A - Method for reconstructing quantum dot surface by polar ligand and realizing high-performance blue light LEDs - Google Patents
Method for reconstructing quantum dot surface by polar ligand and realizing high-performance blue light LEDs Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000003446 ligand Substances 0.000 title claims abstract description 19
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000746 purification Methods 0.000 claims abstract description 18
- 238000002360 preparation method Methods 0.000 claims abstract description 14
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- 238000004140 cleaning Methods 0.000 claims abstract description 8
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- 230000002194 synthesizing effect Effects 0.000 claims abstract description 5
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- 239000000243 solution Substances 0.000 claims description 51
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- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000005642 Oleic acid Substances 0.000 claims description 6
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 6
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- SXGBREZGMJVYRL-UHFFFAOYSA-N butan-1-amine;hydrobromide Chemical compound [Br-].CCCC[NH3+] SXGBREZGMJVYRL-UHFFFAOYSA-N 0.000 claims description 6
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- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 6
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- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 5
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
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- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 3
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- 239000006227 byproduct Substances 0.000 claims description 3
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 3
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims description 3
- 238000002474 experimental method Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 239000005457 ice water Substances 0.000 claims description 3
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 claims description 3
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- RUJHATQMIMUYKD-UHFFFAOYSA-N 2-naphthalen-1-ylethanamine Chemical compound C1=CC=C2C(CCN)=CC=CC2=C1 RUJHATQMIMUYKD-UHFFFAOYSA-N 0.000 claims description 2
- IRAGENYJMTVCCV-UHFFFAOYSA-N 2-phenylethanamine;hydrobromide Chemical compound [Br-].[NH3+]CCC1=CC=CC=C1 IRAGENYJMTVCCV-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 2
- 150000003973 alkyl amines Chemical class 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims description 2
- KBPWECBBZZNAIE-UHFFFAOYSA-N aniline;hydron;bromide Chemical compound Br.NC1=CC=CC=C1 KBPWECBBZZNAIE-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 2
- 238000005202 decontamination Methods 0.000 claims description 2
- 230000003588 decontaminative effect Effects 0.000 claims description 2
- VZXFEELLBDNLAL-UHFFFAOYSA-N dodecan-1-amine;hydrobromide Chemical compound [Br-].CCCCCCCCCCCC[NH3+] VZXFEELLBDNLAL-UHFFFAOYSA-N 0.000 claims description 2
- 229920002530 polyetherether ketone Polymers 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
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- 238000001194 electroluminescence spectrum Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000013110 organic ligand Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
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- 238000011160 research Methods 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
- C09K11/665—Halogenides with alkali or alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a method for reconstructing the surface of quantum dots by polar ligands and realizing high-performance blue LEDs, which is characterized in that: it comprises the following steps: s1: synthesizing cesium oleate precursor solution required for preparing quantum dots; s2: synthesizing quantum dots; s3: purifying the quantum dots; s4: preparation of an LED device. According to the method, on the premise of not adding extra steps, in-situ surface reconstruction is carried out on the luminescent active substances in the PeLED by adopting ammonium bromide salt in the purification and cleaning process, the defect density of the surface of the quantum dot is reduced by repairing the surface of the damaged quantum dot after purification, the photoluminescence yield of the perovskite quantum dot is improved, and the efficiency of the blue perovskite quantum dot LEDs is improved.
Description
Technical Field
The invention belongs to the technical field of manufacturing of optoelectronic devices, and particularly relates to a method for reconstructing the surface of a quantum dot by a polar ligand and realizing high-performance blue LEDs.
Background
With the development of science and technology and the daily production and living demands of people, the traditional daily life style of 'sunrise and sunset and rest' can not meet the demands of work and living in the modern society far. With the firm belief that "black eyes are given to me at night" that me is looking for light, people are continually looking for new luminescent materials.
For centuries, luminescent display technology has undergone many updates, but they all have their own drawbacks and limitations. The original cathode ray tube display is complex and expensive in structure; the extra backlight source in the liquid crystal display causes serious light leakage problem; the existing organic light emitting diode can only be used for some small-sized devices, and cannot meet all the demands of the market.
Perovskite quantum dots are widely used in semiconductor light emitting diodes because of their wide color gamut, narrow half-peak width, high color purity, and high fluorescence quantum yield. Wherein the external quantum efficiency of the red and green LEDs has been improved to over 20%, while the blue LEDs have been more retarded in development.
In the preparation process of perovskite quantum dots, a large amount of long-chain organic ligands are required to be added to provide steric hindrance so as to prevent agglomeration of the colloid quantum dots. However, excessive organic ligand can lead to lower conductivity of the colloidal quantum dot solution and poorer film forming property, which limits the application of the colloidal quantum dot in photoelectric devices. Therefore, before using the quantum dot solution, the quantum dots need to be purified and washed to remove the redundant ligand. In this process, damage to the surface structure of the quantum dot can occur, creating additional surface defects. In the past researches, a certain repair is carried out on the surface defects of the quantum dots by carrying out ligand exchange in the purified quantum dot solution, but a plurality of problems still exist in the ligand exchange process.
Although the ligand exchange post-treatment process has some help to the performance of the device, the improvement of photoluminescence efficiency and external quantum yield by the method is still limited, the post-treatment process is complex, the repeatability is poor, a great amount of waste of manpower and resources is caused in actual production, and most importantly, the traditional repairing means inevitably introduces a high-polarity solvent into the quantum dots, and the high-polarity solvent can agglomerate the quantum dots, so that unnecessary performance loss and stability are reduced. Therefore, there is a need for a method for preparing a PeLED device with higher external quantum efficiency and longer service life, which can repair the redundant defects introduced in the quantum dot purification process without introducing additional complicated steps and redundant polar solvents.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides a method for reconstructing the surface of a quantum dot by using a simple polar ligand and realizing high-performance blue light LEDs.
The scheme is realized by the following technical measures: a method for reconstructing the surface of quantum dots and achieving high performance blue LEDs with polar ligands, comprising the steps of:
s1: synthesizing cesium oleate precursor solution required for preparing quantum dots: 814mg of cesium carbonate, 2.6mL of oleic acid and 30mL of 1-octadecene were added together to a 100mL three-necked flask, and the three-necked flask was then evacuated and N 2 The devices are connected, and the connection part is sealed by Vaseline; vacuumizing and introducing N at room temperature for several times 2 Removing water oxygen in the system; heating to 120deg.C under vacuum, maintaining for 1 hr, and then heating under N 2 Heating to 150deg.C under atmosphere, and continuously heating until Cs 2 CO 3 The solid is completely dissolved; sealing and storing the obtained solution in a plurality of 5mL centrifuge tubes, and placing the solution in a refrigerator for standby;
s2: measuring amountSynthesizing the sub-points: 69mg of lead bromide, 52.3mg of lead chloride, 10mL of 1-octadecene were added together to a 50mL three-necked flask, and the three-necked flask was then evacuated and N 2 The devices are connected, and the connection part is sealed by Vaseline; vacuumizing and introducing N at room temperature for several times 2 To remove water oxygen in the system; heating to 120 ℃ in a vacuum environment and preserving heat for 1h; at N 2 Introducing 1mL of oleic acid and 1mL of oleylamine which are dried in advance under the air flow, heating to 175 ℃ after the solid is completely dissolved, immediately injecting cesium oleate precursor solution prepared in the step S1 which is preheated to 100 ℃, taking down the three-necked flask after reacting for 5 seconds, and placing the three-necked flask in an ice water bath to cool to room temperature so as to prevent the quantum dots from growing continuously;
s3: purification of quantum dots:
(1) Shaking the quantum dot solution in the step S2 uniformly, putting the solution into two 10mL centrifuge tubes, centrifuging for 10min at a speed of 5000rpm, and separating redundant reactants and byproducts which do not participate in the reaction;
(2) Pouring out the supernatant, adding 2mL of toluene into each test tube to dissolve the centrifuged precipitate, then adding 4mL of ethyl acetate into each test tube, and centrifuging at 8000rpm for 10min;
(3) Pouring out the supernatant, adding 2mL of toluene again to each test tube to dissolve the centrifuged precipitate, then adding 4mL of ethyl acetate to each test tube, and centrifuging at 8000rpm for 10min;
(4) Pouring out the supernatant, and dissolving the obtained precipitate in 2mL of toluene to form a quantum dot solution for preparing an LED device and optically characterizing the LED device;
s4: preparation of an LED device.
Preferably, the preparation method of the LED device in step S4 is as follows:
(1) Preparation before experiment: filtering PEDOT (polyether-ether-ketone) PSS (Poly-TPD) solution with water system 0.22 μm filter head, preparing 8mg/mL Poly-TPD solution with chlorobenzene as solvent, scrubbing ITO glass substrate surface with decontamination powder, washing with deionized water, respectively ultrasonic cleaning with deionized water, acetone and isopropanol for 10min, and then washing with N 2 Blowing the mixture to dryness under the air flow, and placing the mixture into a plasma cleaning instrument to carry out ultraviolet radiation with the power of 50wTreating for 15min;
(2) Putting the ITO glass substrate in the right center of a tray of a spin coater, spin coating the filtered PEDOT (poly styrene-co-styrene) in the step (1) at 4000rpm for 40s in an air atmosphere, then putting the ITO glass substrate on a heating table for annealing for 20min, and transferring the ITO glass substrate to a glass substrate full of N after the annealing is finished 2 Cooling to room temperature in a glove box;
(3) At the full level of N 2 Spin-coating the Poly-TPD solution prepared in step (1) at 4000rpm, then placing the ITO glass substrate on a heating table for annealing for 20min, and cooling the ITO glass substrate to room temperature after the annealing is completed;
(4) At the full level of N 2 Spin-coating the quantum dot solution prepared in the sub-step (4) of the step S3 at a speed of 2000rpm in a glove box to prepare a luminescent layer film;
(5) Placing the sample into a vacuum evaporator, wherein the sample is less than 5×10 -4 Vapor deposition of TPBi, liF and Al in turn under the vacuum degree of pa, the vapor deposition rate is in turnThe vapor deposition thickness is 40nm, 1nm and 100nm in sequence, so that the LED device is prepared.
Preferably, the LED device comprises a glass substrate, and a cathode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer, an electron injection layer and an anode which are sequentially spin-coated on the glass substrate, wherein the cathode is ITO; the hole injection layer is PEDOT: PSS, and the thickness of the hole injection layer is 30-50nm; the hole transport layer is Poly-TPD, and the thickness of the hole transport layer is 20-40nm; the material of the quantum dot luminescent layer is metal halide with perovskite structure after surface reconstruction by ammonium bromide, and the thickness of the luminescent layer is 15-80nm; the electron transport layer is TPBi, and the thickness of the electron transport layer is 30-50nm; the electron injection layer is LiF, and the thickness of the electron injection layer is 0.7-2nm; the anode is an Al film, and the thickness of the anode is 95-105nm.
Preferably, ammonium bromide as a modifying material is added to the quantum dots in the purification process of the quantum dot luminescent layer.
Preferably, the ammonium bromide salt of the modifying material is added to the quantum dots during any one or more of the purification processes of the quantum dot luminescent layer.
Preferably, the material of the quantum dot luminescent layer is CsPbBr 1.5 Cl 1.5 、CsPbBr 2 Cl，CsPbBr 3 Or CsPbI 3 。
Preferably, the modifying material is a bromide salt of an alkylamine or a bromide salt of other carbon chains containing protonated amine groups.
Preferably, the modification material is butylamine bromide, n-Xin Anqing bromate, n-dodecylamine hydrobromide, aniline bromide, phenethylamine bromide or naphthylethylamine bromide.
The invention has the beneficial effects that: according to the method, on the premise that no extra step is added, in-situ surface reconstruction is carried out on a quantum dot luminescent layer in a blue light LED by adopting ammonium bromide salt in the purification and cleaning process, defect density on the surface of the quantum dot is reduced by repairing the surface of the damaged quantum dot after purification, specifically, ammonium bromide salt is directly dissolved into ethyl acetate solution used for purifying the quantum dot, bromide ions and amino cations in the ethyl acetate interact with defect states introduced in the purification process automatically in the purification and cleaning process, the bromide ions and the amino cations are combined with free Pb2+ ions on the surface, vcs and Vx on the surface are filled, the method mainly aims at the purification process in the preparation process of the quantum dot, the improvement of photoluminescence yield of the perovskite quantum dot is realized by the method, the improvement of the efficiency of blue light perovskite quantum dot LEDs is also realized, and the method provides an important improvement strategy and research direction for perovskite nanocrystalline LEDs from the preparation angle of the luminescent layer. It can be seen that the present invention has outstanding substantial features and significant advances over the prior art, as well as the benefits of its implementation.
Drawings
FIG. 1 is a schematic diagram of the mechanism of the process of purifying damage and repair of the quantum dot material of the present invention.
Fig. 2 is a schematic diagram of the structure of a blue light LEDs device with amine bromide salt repairing quantum dot surfaces according to the present invention.
Fig. 3 is an XRD pattern of quantum dots Q1-Q4 corresponding to examples 1-4.
Fig. 4 is an emission spectrum of quantum dots Q1 to Q4 corresponding to examples 1 to 4.
FIG. 5 is a graph of photoluminescence quantum yield vs. quantum yield for quantum dots Q1-Q4 corresponding to examples 1-4.
Fig. 6 is a graph comparing photoluminescence lifetime of quantum dots Q1-Q4 corresponding to examples 1-4.
Fig. 7 is a graph showing current density and brightness of the LED device D1 according to example 1 at different voltages.
Fig. 8 is a graph showing current density and brightness of the LED device D2 according to example 2 at different voltages.
Fig. 9 is a graph showing current density and brightness of the LED device D3 according to example 3 at different voltages.
Fig. 10 is a graph showing current density and brightness of the LED device D4 according to example 4 at different voltages.
Fig. 11 shows the electroluminescence spectra of the LED devices D1 to D4 according to examples 1 to 4.
In the figure: 1-anode and electron injection layer, 2-electron transport layer, 3-quantum dot luminescent layer, 4-hole transport layer, 5-hole injection layer, 6-cathode, 7-glass substrate.
Detailed Description
In order to clearly illustrate the technical characteristics of the present solution, the present solution is described below by means of specific embodiments and with reference to the accompanying drawings.
Example 1
A method for reconstructing the surface of quantum dots and achieving high performance blue LEDs with polar ligands, comprising the steps of:
s1: synthesizing cesium oleate precursor solution required for preparing quantum dots: 814mg of cesium carbonate, 2.6mL of oleic acid and 30mL of 1-octadecene were added together to a 100mL three-necked flask, and the three-necked flask was then evacuated and N 2 The devices are connected, and the connection part is sealed by Vaseline; vacuumizing and introducing N at room temperature for several times 2 Removing water oxygen in the system; in a vacuum environmentHeating to 120deg.C and maintaining for 1 hr, then adding into N 2 Heating to 150deg.C under atmosphere, and continuously heating until Cs 2 CO 3 The solid is completely dissolved; sealing and storing the obtained solution in a plurality of 5mL centrifuge tubes, and placing the solution in a refrigerator for standby;
s2: synthesis of quantum dots: 69mg of lead bromide, 52.3mg of lead chloride, 10mL of 1-octadecene were added together to a 50mL three-necked flask, and the three-necked flask was then evacuated and N 2 The devices are connected, and the connection part is sealed by Vaseline; vacuumizing and introducing N at room temperature for several times 2 To remove water oxygen in the system; heating to 120 ℃ in a vacuum environment and preserving heat for 1h; at N 2 Introducing 1mL of oleic acid and 1mL of oleylamine which are dried in advance under the air flow, heating to 175 ℃ after the solid is completely dissolved, immediately injecting cesium oleate precursor solution prepared in the step S1 which is preheated to 100 ℃, taking down the three-necked flask after reacting for 5 seconds, and placing the three-necked flask in an ice water bath to cool to room temperature so as to prevent the quantum dots from growing continuously;
s3: purification of quantum dots:
(1) Shaking the quantum dot solution in the step S2 uniformly, putting the solution into two 10mL centrifuge tubes, centrifuging for 10min at a speed of 5000rpm, and separating redundant reactants and byproducts which do not participate in the reaction;
(2) Pouring out the supernatant, adding 2mL of toluene into each test tube to dissolve the centrifuged precipitate, then adding 4mL of ethyl acetate into each test tube, and centrifuging at 8000rpm for 10min;
(3) Pouring out the supernatant, adding 2mL of toluene again to each test tube to dissolve the centrifuged precipitate, then adding 4mL of ethyl acetate to each test tube, and centrifuging at 8000rpm for 10min;
(4) Pouring out the supernatant, and dissolving the obtained precipitate in 2mL of toluene to form a quantum dot solution for preparing an LED device and optically characterizing the LED device;
s4: the preparation method of the LED device comprises the following steps:
(1) Preparation before experiment: filtering the PEDOT-PSS solution with a water system 0.22 μm filter head, preparing 8mg/mL Poly-TPD solution with chlorobenzene as solvent, and scrubbing ITO glass substrate with detergentAfter the surface is washed clean by deionized water, respectively ultrasonic cleaning by deionized water, acetone and isopropanol for 10min, then cleaning in N 2 Blowing the mixture to be dry under the air flow, and placing the mixture into a plasma cleaning instrument for ultraviolet treatment for 15min at the power of 50 w;
(2) Putting the ITO glass substrate in the right center of a tray of a spin coater, spin coating the filtered PEDOT (poly styrene-co-styrene) in the step (1) at 4000rpm for 40s in an air atmosphere, then putting the ITO glass substrate on a heating table for annealing for 20min, and transferring the ITO glass substrate to a glass substrate full of N after the annealing is finished 2 Cooling to room temperature in a glove box;
(3) At the full level of N 2 Spin-coating the Poly-TPD solution prepared in step (1) at 4000rpm, then placing the ITO glass substrate on a heating table for annealing for 20min, and cooling the ITO glass substrate to room temperature after the annealing is completed;
(4) At the full level of N 2 Spin-coating the quantum dot solution prepared in the sub-step (4) of the step S3 at a speed of 2000rpm in a glove box to prepare a luminescent layer film;
(5) Placing the sample into a vacuum evaporator, wherein the sample is less than 5×10 -4 Vapor deposition of TPBi, liF and Al in turn under the vacuum degree of pa, the vapor deposition rate is in turnThe vapor deposition thickness is 40nm, 1nm and 100nm in sequence, so that the LED device is prepared.
The LED device comprises a glass substrate, and a cathode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer, an electron injection layer and an anode which are sequentially spin-coated on the glass substrate, wherein the cathode is ITO; the hole injection layer is PEDOT: PSS, and the thickness of the hole injection layer is 40nm; the hole transport layer is Poly-TPD, and the thickness of the hole transport layer is 30nm; the material of the quantum dot luminescent layer is metal halide with perovskite structure after surface reconstruction by ammonium bromide salt, and concretely, the material of the quantum dot luminescent layer is CsPbBr 1.5 Cl 1.5 The thickness of the light-emitting layer is 20nm; the electron transport layer is TPBi, and the thickness of the electron transport layer is 40nm; the saidThe electron injection layer is LiF, and the thickness of the electron injection layer is 1nm; the anode is an Al film, and the thickness of the anode is 100nm. The LED device is denoted D1, and the quantum dot light emitting layer therein is denoted Q1. Electrons are injected from the cathode, holes are injected from the anode, and electron-hole pairs are formed by recombination in the quantum dot light-emitting layer, and light is emitted by recombination. In the process of preparing the quantum dot luminescent layer, the prepared perovskite quantum dot needs to be separated and purified, and a large amount of Cs can be introduced on the surface of the quantum dot in the process + Ion vacancy (V) cs ) And halide vacancies (V) Br ) This makes further surface conditioning necessary for the process of quantum dot separation and purification.
The modification material ammonium bromide is added into the quantum dots in the quantum dot luminescent layer purification process, specifically, the modification material ammonium bromide is added into the quantum dots in any one or more quantum dot luminescent layer purification processes, and the modification material is butylamine bromide. The modification material ammonium bromide is added into quantum dots in the process of purifying the quantum dot luminescent layer, under the condition of not introducing an additional repairing step, the modification material is added in situ in the process of purifying and cleaning, so that the unit cell structure of the quantum dot surface is expected to be reconstructed, the trap state generated in the process of purifying is repaired, and the tolerance factor of the perovskite structure is improved through the amino cations with larger particle size, so that the crystal structure of the perovskite is more stable, and the working stability of an LED device is improved.
Example 2
The difference between this embodiment and embodiment 1 is as follows:
1. preparing a solution:
will be 0.385mg (BA) + ：Cs + =1: 10, mol/mol) of butylamine bromide (BABr) was dissolved in 10mL of ethyl acetate and stirred overnight.
2. Preparation of an LED device: the ethyl acetate solution in step S3 (3) of example 1 was replaced with the ethyl butylaminoacetate bromide solution prepared in the previous step, which changed only the ethyl acetate solution used to clean the ligands, and did not change the remaining deposition process and thickness.
The LED device comprises a glass substrate, and a cathode, a hole injection layer and a hole which are sequentially spin-coated on the glass substrateThe device comprises a transmission layer, a quantum dot luminescent layer, an electron transmission layer, an electron injection layer and an anode, wherein the cathode is ITO; the hole injection layer is PEDOT: PSS, and the thickness of the hole injection layer is 40nm; the hole transport layer is Poly-TPD, and the thickness of the hole transport layer is 30nm; the material of the quantum dot luminescent layer is metal halide with perovskite structure after surface reconstruction by ammonium bromide salt, and concretely, the material of the quantum dot luminescent layer is CsPbBr 1.5 Cl 1.5 The thickness of the light-emitting layer is 20nm; the electron transport layer is TPBi, and the thickness of the electron transport layer is 40nm; the electron injection layer is LiF, and the thickness of the electron injection layer is 1nm; the anode is an Al film, and the thickness of the anode is 100nm. The LED device is denoted D2, wherein the quantum dot light emitting layer is denoted Q2.
Example 3
The difference between this embodiment and embodiment 1 is as follows:
1. preparing a solution:
will be 0.77mg (BA) + ：Cs + =2: 10, mol/mol) of butylamine bromide (BABr) was dissolved in 10mL of ethyl acetate and stirred overnight.
2. Preparation of an LED device: the ethyl acetate solution in step S3 (3) of example 1 was replaced with the ethyl butylamine bromide acetate solution prepared in the previous step. This process only changed the ethyl acetate solution used to clean the ligands, and did not change the remaining deposition process and thickness.
The LED device comprises a glass substrate, and a cathode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer, an electron injection layer and an anode which are sequentially spin-coated on the glass substrate, wherein the cathode is ITO; the hole injection layer is PEDOT: PSS, and the thickness of the hole injection layer is 40nm; the hole transport layer is Poly-TPD, and the thickness of the hole transport layer is 30nm; the material of the quantum dot luminescent layer is metal halide with perovskite structure after surface reconstruction by ammonium bromide salt, and concretely, the material of the quantum dot luminescent layer is CsPbBr 1.5 Cl 1.5 The thickness of the light-emitting layer is 20nm; the electron transport layer is TPBi, and the thickness of the electron transport layer is40nm; the electron injection layer is LiF, and the thickness of the electron injection layer is 1nm; the anode is an Al film, and the thickness of the anode is 100nm. The LED device is denoted D3, wherein the quantum dot light emitting layer is denoted Q3.
Example 4
1. Preparing a solution:
1.155mg (BA) + ：Cs + =3: 10, mol/mol) of butylamine bromide (BABr) was dissolved in 10mL of ethyl acetate and stirred overnight.
2. Preparation of an LED device: the ethyl acetate solution in step S3 (3) of example 1 was replaced with the ethyl butylamine bromide acetate solution prepared in the previous step. This process only changed the ethyl acetate solution used to clean the ligands, and did not change the remaining deposition process and thickness.
The LED device comprises a glass substrate, and a cathode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer, an electron injection layer and an anode which are sequentially spin-coated on the glass substrate, wherein the cathode is ITO; the hole injection layer is PEDOT: PSS, and the thickness of the hole injection layer is 40nm; the hole transport layer is Poly-TPD, and the thickness of the hole transport layer is 30nm; the material of the quantum dot luminescent layer is metal halide with perovskite structure after surface reconstruction by ammonium bromide salt, and concretely, the material of the quantum dot luminescent layer is CsPbBr 1.5 Cl 1.5 The thickness of the light-emitting layer is 20nm; the electron transport layer is TPBi, and the thickness of the electron transport layer is 40nm; the electron injection layer is LiF, and the thickness of the electron injection layer is 1nm; the anode is an Al film, and the thickness of the anode is 100nm. The LED device is denoted D4, wherein the quantum dot light emitting layer is denoted Q4.
Test and experimental analysis:
(1) In order to verify whether the crystal structure of the quantum dot material is changed by the ammonium bromide post-treatment means, a small amount of quantum dots Q1-Q4 are collected and dripped on a clean silicon wafer to measure the XRD pattern of the quantum dots. The measurement results are shown in fig. 3. XRD data show that the quantum dots Q1-Q4 are in one-to-one correspondence with standard PDF cards, and the quantum dots are in pure cubic perovskite crystal structures, which shows thatThe ammonium bromide post-treatment did not alter CsPbBr 1.5 Cl 1.5 Crystal structure of quantum dots.
(2) To explore the effect of the ammonium bromide post-treatment means on quantum dot luminescence and forbidden bandwidth, photoluminescence (PL) spectra were measured. The measurement results are shown in fig. 4. It can be further shown that the bromide ions in the ammonium bromide salt are attached to the surface of the quantum dots and the halide ratio inside the bulk phase of the quantum dots is not changed.
(3) To further elucidate the gain of the luminescence properties of the ammonium bromide post-treatment, its photoluminescence quantum yield (PLQY) and Time Resolved Photoluminescence Lifetime (TRPL) were measured. The measurement results are shown in fig. 5 and 6. It can be seen that the Q4 quantum dots have the longest carrier lifetime and highest photoluminescence quantum yield.
(4) To investigate the practical application performance of the ammonium bromide surface repaired quantum dot in an LED device, the current density and brightness curves of the devices D1-D4 under different voltages were measured, and the results are shown in FIG. 7-FIG. 10. The Electroluminescence (EL) spectrum is shown in fig. 11. It can be seen that at approximately the same current density, the D4 device has the highest brightness, indicating an improvement in light emission performance. The EL spectrum proves that the LED device with the emission wavelength of about 450nm is prepared by the invention, and belongs to the field of blue light emission.
The technical features not described in the present invention may be implemented by the prior art, and are not described herein. The present invention is not limited to the above-described embodiments, and variations, modifications, additions, or substitutions within the spirit and scope of the present invention will be within the scope of the present invention by those of ordinary skill in the art.
Claims (8)
1. A method for reconstructing quantum dot surfaces and realizing high-performance blue LEDs by polar ligands, characterized by: it comprises the following steps:
s1: synthesizing cesium oleate precursor solution required for preparing quantum dots: 814mg of cesium carbonate, 2.6mL of oleic acid and 30mL of 1-octadecene were charged together in a 100mL three-necked flask, thenThen the three-neck flask is put under vacuum and N 2 The devices are connected, and the connection part is sealed by Vaseline; vacuumizing and introducing N at room temperature for several times 2 Removing water oxygen in the system; heating to 120deg.C under vacuum, maintaining for 1 hr, and then heating under N 2 Heating to 150deg.C under atmosphere, and continuously heating until Cs 2 CO 3 The solid is completely dissolved; sealing and storing the obtained solution in a plurality of 5mL centrifuge tubes, and placing the solution in a refrigerator for standby;
s2: synthesis of quantum dots: 69mg of lead bromide, 52.3mg of lead chloride, 10mL of 1-octadecene were added together to a 50mL three-necked flask, and the three-necked flask was then evacuated and N 2 The devices are connected, and the connection part is sealed by Vaseline; vacuumizing and introducing N at room temperature for several times 2 To remove water oxygen in the system; heating to 120 ℃ in a vacuum environment and preserving heat for 1h; at N 2 Introducing 1mL of oleic acid and 1mL of oleylamine which are dried in advance under the air flow, heating to 175 ℃ after the solid is completely dissolved, immediately injecting cesium oleate precursor solution prepared in the step S1 which is preheated to 100 ℃, taking down the three-necked flask after reacting for 5 seconds, and placing the three-necked flask in an ice water bath to cool to room temperature so as to prevent the quantum dots from growing continuously;
s3: purification of quantum dots:
(1) Shaking the quantum dot solution in the step S2 uniformly, putting the solution into two 10mL centrifuge tubes, centrifuging for 10min at a speed of 5000rpm, and separating redundant reactants and byproducts which do not participate in the reaction;
(2) Pouring out the supernatant, adding 2mL of toluene into each test tube to dissolve the centrifuged precipitate, then adding 4mL of ethyl acetate into each test tube, and centrifuging at 8000rpm for 10min;
(3) Pouring out the supernatant, adding 2mL of toluene again to each test tube to dissolve the centrifuged precipitate, then adding 4mL of ethyl acetate to each test tube, and centrifuging at 8000rpm for 10min;
(4) Pouring out the supernatant, and dissolving the obtained precipitate in 2mL of toluene to form a quantum dot solution for preparing an LED device and optically characterizing the LED device;
s4: and (3) preparing a device.
2. The method of reconstructing a quantum dot surface and achieving high performance blue LEDs with polar ligands of claim 1, wherein: the preparation method of the LED device in the step S4 is as follows:
(1) Preparation before experiment: filtering PEDOT (polyether-ether-ketone) PSS (Poly-TPD) solution with water system 0.22 μm filter head, preparing 8mg/mL Poly-TPD solution with chlorobenzene as solvent, scrubbing ITO glass substrate surface with decontamination powder, washing with deionized water, respectively ultrasonic cleaning with deionized water, acetone and isopropanol for 10min, and then washing with N 2 Blowing the mixture to be dry under the air flow, and placing the mixture into a plasma cleaning instrument for ultraviolet treatment for 15min at the power of 50 w;
(2) Putting the ITO glass substrate in the right center of a tray of a spin coater, spin coating the filtered PEDOT (poly styrene-co-styrene) in the step (1) at 4000rpm for 40s in an air atmosphere, then putting the ITO glass substrate on a heating table for annealing for 20min, and transferring the ITO glass substrate to a glass substrate full of N after the annealing is finished 2 Cooling to room temperature in a glove box;
(3) At the full level of N 2 Spin-coating the Poly-TPD solution prepared in step (1) at 4000rpm, then placing the ITO glass substrate on a heating table for annealing for 20min, and cooling the ITO glass substrate to room temperature after the annealing is completed;
(4) At the full level of N 2 Spin-coating the quantum dot solution prepared in the sub-step (4) of the step S3 at a speed of 2000rpm in a glove box to prepare a luminescent layer film;
(5) Placing the sample into a vacuum evaporator, wherein the sample is less than 5×10 -4 Vapor deposition of TPBi, liF and Al in turn under the vacuum degree of pa, the vapor deposition rate is in turnThe vapor deposition thickness is 40nm, 1nm and 100nm in sequence, so that the LED device is prepared.
3. The method of reconstructing the quantum dot surface and achieving high performance blue LEDs of claim 2, wherein: the LED device comprises a glass substrate, and a cathode, a hole injection layer, a hole transport layer, a quantum dot luminescent layer, an electron transport layer, an electron injection layer and an anode which are sequentially spin-coated on the glass substrate, wherein the cathode is ITO; the hole injection layer is PEDOT: PSS, and the thickness of the hole injection layer is 30-50nm; the hole transport layer is Poly-TPD, and the thickness of the hole transport layer is 20-40nm; the material of the quantum dot luminescent layer is metal halide with perovskite structure after surface reconstruction by ammonium bromide, and the thickness of the luminescent layer is 15-80nm; the electron transport layer is TPBi, and the thickness of the electron transport layer is 30-50nm; the electron injection layer is LiF, and the thickness of the electron injection layer is 0.7-2nm; the anode is an Al film, and the thickness of the anode is 95-105nm.
4. A method of reconstructing a quantum dot surface and achieving high performance blue LEDs using a polar ligand according to claim 3, wherein: and adding a modification material ammonium bromide salt into the quantum dots in the purification process of the quantum dot luminescent layer.
5. The method of reconstructing a quantum dot surface and achieving high performance blue LEDs with polar ligands of claim 4, wherein: and adding modified material ammonium bromide salt into the quantum dots in the purification process of the quantum dot luminescent layer for any one or more times.
6. The method of reconstructing a quantum dot surface and achieving high performance blue LEDs by polar ligands as claimed in claim 5, wherein: the material of the quantum dot luminescent layer is CsPbBr 1.5 Cl 1.5 、CsPbBr 2 Cl，CsPbBr 3 Or CsPbI 3 。
7. The method of reconstructing the quantum dot surface and achieving high performance blue LEDs of claim 6, wherein: the modifying material is bromide salt of alkylamine or bromide salt of other carbon chains containing protonated amine groups.
8. The method of reconstructing the quantum dot surface and achieving high performance blue LEDs of claim 7, wherein: the modification material is butylamine bromide, n-Xin Anqing bromate, n-dodecylamine hydrobromide, aniline bromide, phenethylamine bromide or naphthylethylamine bromide.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104388089A (en) * | 2014-11-04 | 2015-03-04 | 北京理工大学 | High-fluorescence-quantum-yield hybridized perovskite quantum dot material and preparation method thereof |
| CN107017325A (en) * | 2015-11-30 | 2017-08-04 | 隆达电子股份有限公司 | Quantum dot composite material and manufacturing method and application thereof |
| CN108774511A (en) * | 2018-05-31 | 2018-11-09 | 兰州大学 | The preparation of full-inorganic perovskite quantum dot/mesoporous MOF-5 composite luminescent materials and application in the led |
| CN108793234A (en) * | 2018-06-11 | 2018-11-13 | 南京理工大学 | A kind of CsPbX3Quantum dot room temperature synthetic method |
| CN111139059A (en) * | 2019-12-19 | 2020-05-12 | 南京理工大学 | Method for improving perovskite quantum dot performance by short-chain alkyl carboxylic acid |
| CN112175613A (en) * | 2020-09-24 | 2021-01-05 | 南京理工大学 | Method for preparing high-efficiency stable inorganic perovskite quantum dots by double-layer ligand |
| CN113437227A (en) * | 2020-03-23 | 2021-09-24 | 京东方科技集团股份有限公司 | Light-emitting film, preparation method and electroluminescent device |
| CN115700270A (en) * | 2021-07-27 | 2023-02-07 | 北京京东方技术开发有限公司 | Quantum dot film and preparation method thereof, photoelectric device, display device and preparation method of quantum dot light-emitting device |
| CN116063185A (en) * | 2023-02-27 | 2023-05-05 | 天津大学 | Chiral perovskite nanowire with circular polarization luminescence characteristic and preparation method thereof |
-
2023
- 2023-05-29 CN CN202310614668.4A patent/CN116676082B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104388089A (en) * | 2014-11-04 | 2015-03-04 | 北京理工大学 | High-fluorescence-quantum-yield hybridized perovskite quantum dot material and preparation method thereof |
| CN107017325A (en) * | 2015-11-30 | 2017-08-04 | 隆达电子股份有限公司 | Quantum dot composite material and manufacturing method and application thereof |
| CN108774511A (en) * | 2018-05-31 | 2018-11-09 | 兰州大学 | The preparation of full-inorganic perovskite quantum dot/mesoporous MOF-5 composite luminescent materials and application in the led |
| CN108793234A (en) * | 2018-06-11 | 2018-11-13 | 南京理工大学 | A kind of CsPbX3Quantum dot room temperature synthetic method |
| CN111139059A (en) * | 2019-12-19 | 2020-05-12 | 南京理工大学 | Method for improving perovskite quantum dot performance by short-chain alkyl carboxylic acid |
| CN113437227A (en) * | 2020-03-23 | 2021-09-24 | 京东方科技集团股份有限公司 | Light-emitting film, preparation method and electroluminescent device |
| CN112175613A (en) * | 2020-09-24 | 2021-01-05 | 南京理工大学 | Method for preparing high-efficiency stable inorganic perovskite quantum dots by double-layer ligand |
| CN115700270A (en) * | 2021-07-27 | 2023-02-07 | 北京京东方技术开发有限公司 | Quantum dot film and preparation method thereof, photoelectric device, display device and preparation method of quantum dot light-emitting device |
| CN116063185A (en) * | 2023-02-27 | 2023-05-05 | 天津大学 | Chiral perovskite nanowire with circular polarization luminescence characteristic and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| JUN PAN等: "Highly Effi cient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering", ADV. MATER., vol. 28, pages 8718 * |
| YUN SEOP SHIN等: "Vivid and Fully Saturated Blue Light-Emitting Diodes Based on Ligand-Modified Halide Perovskite Nanocrystals", ACS APPL. MATER. INTERFACES, vol. 11, pages 23401 - 23409 * |
| 唐元洪: "《普通高等教育十一五国家级规划教材 纳米材料导论 第2版》", 31 August 2022, 湖南大学出版社, pages: 46 - 49 * |
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