CN116669441A - Solar cell, preparation method thereof, photovoltaic module and photovoltaic device - Google Patents

Solar cell, preparation method thereof, photovoltaic module and photovoltaic device Download PDF

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Publication number
CN116669441A
CN116669441A CN202310943566.7A CN202310943566A CN116669441A CN 116669441 A CN116669441 A CN 116669441A CN 202310943566 A CN202310943566 A CN 202310943566A CN 116669441 A CN116669441 A CN 116669441A
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layer
transport layer
solar cell
carrier
carrier transport
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Inventor
张志郢
请求不公布姓名
周红梅
王诗丹
潘海曦
郭永胜
欧阳楚英
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Contemporary Amperex Technology Co Ltd
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Contemporary Amperex Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The application relates to the technical field of solar cells, and discloses a solar cell, a preparation method thereof, a photovoltaic module and a photovoltaic device. The solar cell comprises a first electrode layer, a first carrier transmission layer, a first light absorption layer, a second carrier transmission layer, a composite structure, a third carrier transmission layer, a second light absorption layer, a fourth carrier transmission layer and a second electrode layer which are sequentially arranged along a first direction; the composite structure comprises a plurality of conductive layers and an insulating layer, wherein the conductive layers are discontinuously arranged in a second direction, the insulating layer is arranged between the conductive layers, and the second direction is perpendicular to the first direction. The technical scheme of the application is beneficial to improving the performance of the solar cell.

Description

Solar cell, preparation method thereof, photovoltaic module and photovoltaic device
Technical Field
The application relates to the technical field of solar cells, in particular to a solar cell, a preparation method thereof, a photovoltaic module and a photovoltaic device.
Background
In recent years, global energy shortage and environmental pollution problems are increasingly prominent, and solar cells are receiving increasing attention as ideal renewable energy sources. Solar cells, also known as photovoltaic cells, are devices that convert light energy directly into electrical energy by the photoelectric or photochemical effect. The photoelectric conversion device rapidly obtains higher photoelectric conversion efficiency within a few years after birth, and has good application prospect.
With the development of solar cell technology, performance requirements of solar cells, such as efficiency and stability, are increasing. Therefore, how to improve the performance of the solar cell is a technical problem to be solved.
Disclosure of Invention
The present application has been made in view of the above problems, and an object thereof is to provide a solar cell, a method for producing the same, a photovoltaic module, and a photovoltaic device, which can improve the performance of the solar cell.
In a first aspect, there is provided a solar cell comprising: the first electrode layer, the first carrier transmission layer, the first light absorption layer, the second carrier transmission layer, the composite structure, the third carrier transmission layer, the second light absorption layer, the fourth carrier transmission layer and the second electrode layer are sequentially arranged along the first direction; the composite structure comprises a plurality of conductive layers and an insulating layer, wherein the conductive layers are discontinuously arranged in a second direction, the insulating layer is arranged between the conductive layers, and the second direction is perpendicular to the first direction.
According to the solar cell, the composite structure comprises the discontinuous conductive layers distributed along the second direction, so that the transverse resistance in the composite structure is increased, the transverse current can be reduced, the parallel resistance of the laminated cell is increased, the filling factor of the solar cell is increased, and the efficiency of the solar cell is improved; meanwhile, the insulating layers are arranged among the discontinuous conductive layers, so that two different types of carrier transmission layers, namely the second carrier transmission layer and the third carrier transmission layer in the laminated solar cell, can be prevented from being in direct contact through gaps among the discontinuous conductive layers, and the efficiency of the solar cell can be further improved.
In one possible implementation, the conductive material of the conductive layer includes at least one of an organic conductive material and an inorganic conductive material.
In one possible implementation, the conductive material includes at least one of transparent conductive oxides, metals and alloys thereof, elemental carbon materials.
In one possible implementation, the transparent conductive oxide includes at least one of indium tin oxide, fluorine doped tin oxide, antimony doped tin oxide, indium doped tungsten oxide, indium doped zinc oxide, aluminum doped zinc oxide, boron doped zinc oxide, the metal includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and the elemental carbon material includes at least one of graphite, graphene, carbon nanotubes.
In one possible implementation, the insulating material of the insulating layer includes at least one of a metal oxide, a metal fluoride, a metal nitride, and an organic insulating material. The above materials all have good insulating properties.
In one possible implementation, the insulating material comprises aluminum oxide.
In one possible implementation manner, the thickness d1 of the conductive layer ranges from 0.1nm to 10nm.
In one possible implementation manner, the thickness d1 of the conductive layer ranges from 0.5nm to 1.2nm.
In one possible implementation manner, the thickness d2 of the insulating layer ranges from 0.1nm to 10nm.
In one possible implementation manner, the thickness d2 of the insulating layer ranges from 0.5nm to 1.2nm.
In the technical scheme, the thicknesses of the conductive layer and the insulating layer are set in the range, so that the efficiency of the solar cell is improved.
In one possible implementation, the materials of the first electrode layer and the second electrode layer include at least one of conductive oxides, metals and alloys thereof, elemental carbon materials.
In one possible implementation, the conductive oxide includes at least one of indium tin oxide, lanthanide metal doped indium oxide, boron doped zinc oxide, fluorine doped tin oxide, indium doped tungsten oxide, indium doped zinc oxide, aluminum doped zinc oxide, gallium zinc oxide; the metal comprises at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum and tungsten; the carbon simple substance material comprises at least one of graphite, graphene and carbon nano tubes. Thus, the material type of the electrode layer is convenient to flexibly select according to actual needs.
In one possible implementation, the first carrier transport layer, the second carrier transport layer, the third carrier transport layer, and the fourth carrier transport layer are hole transport layers or electron transport layers; the material of the hole transport layer comprises a P-type semiconductor, and the material of the electron transport layer comprises an N-type semiconductor.
In one possible implementation, the material of the hole transport layer includes at least one of the following materials and derivatives thereof: [4- (3, 6-dimethoxy-9H-carbazol-9-yl) butyl ]]Phosphoric acid, [2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ]]Phosphoric acid, [4- (3, 6-dibromo-9H-carbazol-9-yl) butyl ]]Phosphoric acid, poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine]Poly-3-hexylthiophene,Triphenylamine with triptycene as a core, 3, 4-ethylenedioxythiophene-methoxytriphenylamine, N- (4-aniline) carbazole-spirobifluorene, poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide and cuprous oxide; the material of the electron transport layer comprises at least one of the following materials and derivatives thereof: bath copper agent [6,6 ]]-phenyl-C61-butanoic acid isopropyl ester, [6,6 ]]Phenyl C71-methyl butyrate, C60, C70, snO x And zinc oxide, wherein the value range of x is 1.5-2.
The above-described material used as the hole transport layer or the electron transport layer can improve the efficiency of the solar cell.
In one possible implementation, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the third carrier transport layer is a hole transport layer, and the fourth carrier transport layer is an electron transport layer.
In one possible implementation, the material of the first light absorbing layer is perovskite and the material of the second light absorbing layer is perovskite.
The perovskite material has the advantages of high conversion efficiency, low cost, environmental protection and the like, can be prepared into a very thin film, is applied to a solar cell, and can effectively improve the efficiency of the solar cell.
In one possible implementation, the first direction is a direction of incidence of solar light, and a band gap of a material of the first light absorbing layer is greater than a band gap of a material of the second light absorbing layer.
When the first direction is the incident direction of sunlight, the sunlight irradiates the first light absorption layer, and the band gap of the material of the first light absorption layer is set to be larger than that of the material of the second light absorption layer, so that the efficiency of the solar cell is improved.
In one possible implementation, the perovskite in the first and second light-absorbing layers has the formula ABX 3 Wherein A comprises CH 3 (NH 2 ) 2 + 、CH(NH 2 ) 2 + 、CH 3 NH 2 + 、Li + 、Na + 、K + 、Rb + 、Cs + At least one of B includes Pb + 、Be 2+ 、Mg 2+ 、Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ At least one of X comprises Cl - 、Br - 、I - 、SCN - 、CNO - 、OCN - 、OSCN - 、SH - 、OH - 、CP - 、CN - 、SeCN - 、N 3 - 、NO 2 - At least one of them.
In one possible implementation, the solar cell further comprises a first hole blocking layer located between the first light absorbing layer and the second carrier transporting layer.
In one possible implementation, the solar cell further comprises a second hole blocking layer located between the second light absorbing layer and the fourth carrier transporting layer.
In the technical scheme, the hole blocking layer is arranged between the light absorption layer and the electron transmission layer, so that electron transmission between the electron transmission layer and the light absorption layer is facilitated, and the efficiency of the solar cell is improved.
In one possible implementation manner, the materials of the first hole blocking layer and the second hole blocking layer include at least one of fullerene, a derivative thereof and SnOx, wherein the value range of x is 1.5-2.
In a second aspect, a method for manufacturing a solar cell is provided, including: providing a first electrode layer, a first carrier transmission layer, a first light absorption layer, a second carrier transmission layer, a composite structure, a third carrier transmission layer, a second light absorption layer, a fourth carrier transmission layer and a second electrode layer which are sequentially arranged along a first direction; the composite structure comprises a plurality of conductive layers and an insulating layer, wherein the conductive layers are discontinuously arranged in a second direction, the insulating layer is arranged between the conductive layers, and the second direction is perpendicular to the first direction.
In one possible implementation manner, the providing a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer, and a second electrode layer that are sequentially arranged along a first direction includes: providing the first electrode layer; preparing the first carrier transport layer on the first electrode layer, wherein the first carrier transport layer is a hole transport layer; preparing the first light absorbing layer on the first carrier transporting layer; preparing the second carrier transport layer on the first light absorption layer, wherein the second carrier transport layer is an electron transport layer; preparing the plurality of conductive layers and the insulating layer on the second carrier transport layer to obtain the composite structure; preparing a third carrier transport layer on the composite structure, wherein the third carrier transport layer is a hole transport layer; preparing the second light absorbing layer on the third carrier transporting layer; preparing the fourth carrier transport layer on the second light absorption layer, wherein the fourth carrier transport layer is an electron transport layer; the second electrode layer is prepared on the fourth carrier transport layer.
In one possible implementation manner, the preparing the plurality of conductive layers and the insulating layer on the second carrier transport layer prepares the composite structure, including: depositing a conductive material on the second carrier transport layer to produce the plurality of conductive layers; and depositing an insulating material on the second carrier transport layer to obtain the insulating layer so as to obtain the composite structure.
In one possible implementation, the preparing the plurality of conductive layers and the insulating layer on the second carrier transport layer includes: depositing a conductive material on the second carrier transport layer to produce the plurality of conductive layers; depositing an insulating material on the second carrier transport layer and the plurality of conductive layers to obtain a composite structure to be treated; and cleaning the composite structure to be treated by using hydrofluoric acid to obtain the composite structure.
In one possible implementation manner, the thickness d1 of the conductive layer ranges from 0.1nm to 10nm.
In one possible implementation manner, the thickness d1 of the conductive layer ranges from 0.5nm to 1.2nm.
In one possible implementation manner, the thickness d2 of the insulating layer ranges from 0.1nm to 10nm.
In one possible implementation manner, the thickness d2 of the insulating layer ranges from 0.5nm to 1.2nm.
In a third aspect, a photovoltaic module is provided comprising the solar cell of the first aspect and any one of the possible implementations thereof.
In a fourth aspect, there is provided a photovoltaic device comprising the photovoltaic module of the third aspect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a solar cell according to an embodiment of the present application;
fig. 2 is a yoz cross-sectional view of a composite structure of a solar cell according to an embodiment of the application;
fig. 3 is a schematic structural view of a solar cell according to an embodiment of the present application;
fig. 4 is a schematic diagram of a method for manufacturing a solar cell according to an embodiment of the application.
Detailed Description
Hereinafter, embodiments of the solar cell, the method for manufacturing the same, the photovoltaic module, and the photovoltaic device according to the present application are specifically disclosed with reference to the accompanying drawings as appropriate. However, unnecessary detailed description may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of the actual same structure may be omitted. This is to avoid that the following description becomes unnecessarily lengthy, facilitating the understanding of those skilled in the art. Furthermore, the drawings and the following description are provided for a full understanding of the present application by those skilled in the art, and are not intended to limit the subject matter recited in the claims.
The "range" disclosed herein is defined in terms of lower and upper limits, with the given range being defined by the selection of a lower and an upper limit, the selected lower and upper limits defining the boundaries of the particular range. Ranges that are defined in this way can be inclusive or exclusive of the endpoints, and any combination can be made, i.e., any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a particular parameter, it is understood that ranges of 60-110 and 80-120 are also contemplated. Furthermore, if the minimum range values 1 and 2 are listed, and if the maximum range values 3,4 and 5 are listed, the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present application, unless otherwise indicated, the numerical range "a-b" represents a shorthand representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" have been listed throughout, and "0-5" is simply a shorthand representation of a combination of these values. When a certain parameter is expressed as an integer of 2 or more, it is disclosed that the parameter is, for example, an integer of 2, 3,4, 5, 6, 7, 8, 9, 10, 11, 12 or the like.
All embodiments of the application and alternative embodiments may be combined with each other to form new solutions, unless otherwise specified.
All technical features and optional technical features of the application may be combined with each other to form new technical solutions, unless specified otherwise.
All the steps of the present application may be performed sequentially or randomly, preferably sequentially, unless otherwise specified. For example, the method comprises steps (a) and (b), meaning that the method may comprise steps (a) and (b) performed sequentially, or may comprise steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), may include steps (a), (c) and (b), may include steps (c), (a) and (b), and the like.
References to "comprising" and "including" in this disclosure mean open ended, unless otherwise noted. For example, the terms "comprising" and "including" may mean that other components not listed may also be included or included.
The term "and/or" is inclusive in the present application, unless otherwise specified. For example, the phrase "a and/or B" means "a, B, or both a and B. More specifically, either of the following conditions satisfies the condition "a or B": a is true (or present) and B is false (or absent); a is false (or absent) and B is true (or present); or both A and B are true (or present).
The solar cell has good application prospect due to higher photoelectric conversion efficiency. In solar cells, the arrangement of the various film layers is critical to the performance of the solar cell, such as stability and efficiency. For example, in order to improve the efficiency of a solar cell, in a stacked cell, a conductive layer is disposed between two light absorbing layers, and the conductive layer is designed to have a discontinuous structure to increase the lateral resistance of the conductive layer, but such a conductive layer structure may cause a risk that different kinds of carrier transport layers on both sides of the conductive layer are in direct contact, which may affect the performance of the solar cell.
In view of this, the embodiment of the application provides a solar cell, which includes a first electrode layer, a first carrier transport layer, a first light absorption layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorption layer, a fourth carrier transport layer, and a second electrode layer sequentially arranged along a first direction; the composite structure comprises a plurality of conductive layers and an insulating layer, wherein the conductive layers are discontinuously arranged in a second direction, the insulating layer is arranged between the conductive layers, and the second direction is perpendicular to the first direction. According to the technical scheme provided by the embodiment of the application, the composite structure comprises a plurality of discontinuous conductive layers distributed along the second direction, so that the transverse resistance in the composite structure is increased, the transverse current can be reduced, the increase of the parallel resistance of the laminated battery is facilitated, the increase of the filling factor of the solar battery is facilitated, and the improvement of the efficiency of the solar battery is facilitated; meanwhile, the insulating layers are arranged among the discontinuous conductive layers, so that two different types of carrier transmission layers, namely the second carrier transmission layer and the third carrier transmission layer in the laminated solar cell, can be prevented from being in direct contact through gaps among the discontinuous conductive layers, and the efficiency of the solar cell can be further improved.
[ solar cell ]
Fig. 1 is a schematic structural view of a solar cell according to an embodiment of the present application, and fig. 2 is a yoz sectional view of a composite structure of a solar cell according to an embodiment of the present application. As shown in fig. 1, the solar cell 10 includes a first electrode layer 101, a first carrier transport layer 102, a first light absorbing layer 103, a second carrier transport layer 104, a composite structure 105, a third carrier transport layer 106, a second light absorbing layer 107, a fourth carrier transport layer 108, and a second electrode layer 109, which are sequentially arranged in the first direction.
The first direction may be a thickness direction of the solar cell, for example, as shown in fig. 1, the first direction is an x direction (a direction indicated by an arrow).
Specifically, the composite structure 105 includes a plurality of conductive layers 1051 and an insulating layer 1052, the plurality of conductive layers 1051 being discontinuously disposed in a second direction, the insulating layer 1052 being disposed between the plurality of conductive layers 1051, the second direction being perpendicular to the first direction. For example, as shown in fig. 1, the second direction is the y-direction, and for another example, as shown in fig. 2, the second direction is the z-direction.
The composite structure 105 includes a plurality of discontinuous conductive layers 1051 distributed along the second direction, such that a lateral resistance in the composite structure 105 increases, thereby enabling a reduction in lateral current, facilitating an increase in parallel resistance of the stacked cells, thereby facilitating an increase in a fill factor of the solar cell, thereby facilitating an increase in efficiency of the solar cell. In the second direction, an insulating layer 1052 is disposed between the discontinuous conductive layers 1051, so that the second carrier transport layer 104 and the third carrier transport layer 106 do not directly contact through gaps between the discontinuous conductive layers 1051, which is beneficial to increasing the overall voltage of the solar cell and further improving the efficiency of the solar cell.
The efficiency of the solar cell 10 may refer to the photoelectric conversion efficiency of the solar cell 10, which refers to the ratio of the maximum output power of the cell when illuminated to the power of the incident light impinging on the cell.
The fill factor of the solar cell 10 may be used to measure the photoelectric conversion efficiency of the solar cell 10. In general, the larger the fill factor, the greater the photoelectric conversion efficiency. The fill factor is related to the current density, which may refer to the current per unit area, the larger the current area, the more advantageous the fill factor is.
The first electrode layer 101 and the second electrode layer 109 are conductive film layers, and the connection of the first electrode layer 101 and the second electrode layer 109 can generate photocurrent to supply power to the electric device.
The solar cell 10 provided by the embodiment of the application comprises a first electrode layer 101, a first carrier transmission layer 102, a first light absorption layer 103, a second carrier transmission layer 104, a composite structure 105, a third carrier transmission layer 106, a second light absorption layer 107, a fourth carrier transmission layer 108 and a second electrode layer 109 which are sequentially arranged along a first direction; wherein the composite structure 105 includes a plurality of conductive layers 1051 and an insulating layer 1052, the plurality of conductive layers 1051 are discontinuously disposed in a second direction, the insulating layer 1052 is disposed between the plurality of conductive layers 1051, and the second direction is perpendicular to the first direction. In the technical scheme of the embodiment of the application, the composite structure 105 comprises a plurality of discontinuous conductive layers 1051 distributed along the second direction, so that the transverse resistance in the composite structure 105 is increased, the transverse current can be reduced, the increase of the parallel resistance of the laminated battery is facilitated, the increase of the filling factor of the solar battery is facilitated, and the efficiency of the solar battery is facilitated to be improved; meanwhile, the insulating layer 1052 is arranged among the discontinuous conductive layers 1051, so that two different types of carrier transmission layers, namely the second carrier transmission layer 104 and the third carrier transmission layer 106 in the laminated solar cell, can be prevented from being in direct contact through gaps among the discontinuous conductive layers 1051, and the efficiency of the solar cell can be further improved.
The following specifically describes a composite structure 105 of a solar cell according to an embodiment of the present application with reference to fig. 2.
As shown in fig. 2, composite structure 105 includes a plurality of conductive layers 1051 and insulating layers 1052. In the second direction, the plurality of conductive layers 1051 are disposed in a dispersed manner, and the second direction is perpendicular to the first direction, and in fig. 2, the second direction may be the y direction or the z direction, that is, the plurality of conductive layers 1051 are disposed in a dispersed manner on the yoz plane. Meanwhile, gaps between the plurality of conductive layers 1051 are filled with an insulating material, forming an insulating layer 1052.
In fig. 2, the conductive layer 1051 is exemplarily illustrated as a circle in front projection on the yoz plane, but the conductive layer 1051 may be cylindrical, but the shape of the conductive layer 1051 is not limited thereto, and for example, the conductive layer 1051 may be a rectangular parallelepiped, an irregular body, or the like.
In some embodiments, the conductive material of the conductive layer 1051 includes at least one of an organic conductive material, an inorganic conductive material.
Optionally, the conductive material comprises at least one of transparent conductive oxides, metals and alloys thereof, elemental carbon materials.
Specifically, the transparent conductive oxide includes at least one of indium tin oxide, fluorine doped tin oxide, antimony doped tin oxide, indium doped tungsten oxide, indium doped zinc oxide, aluminum doped zinc oxide, boron doped zinc oxide, the metal includes at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten, and the elemental carbon material includes at least one of graphite, graphene, and carbon nanotubes.
In some embodiments, the insulating material of insulating layer 1052 may include at least one of a metal oxide, a metal fluoride, a metal nitride, an organic insulating material. For example, the insulating material includes aluminum oxide.
The above materials all have good insulating properties.
In some embodiments, as shown in fig. 1, the thickness d1 of the conductive layer 1051 ranges from 0.1nm to 10nm, and optionally, the thickness d1 ranges from 0.5nm to 1.2nm.
Specifically, the thickness d1 of the conductive layer 1051 may be 0.1nm, 0.5nm, 1nm, 1.2nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, or a value between any of the above values.
In some embodiments, with continued reference to fig. 1, the thickness d2 of the insulating layer 1052 may range from 0.1nm to 10nm, and optionally d2 may range from 0.5nm to 1.2nm.
Specifically, the thickness d2 of the insulating layer 1052 may be 0.1nm, 0.5nm, 1nm, 1.2nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, or a value between any of the above values.
In the above technical solution, the thicknesses of the conductive layer 1051 and the insulating layer 1052 are set within the above range, which is advantageous for improving the efficiency of the solar cell.
In some embodiments, the material of the first electrode layer 101 and the second electrode layer 109 includes at least one of conductive oxides, metals and alloys thereof, elemental carbon materials.
Optionally, the conductive oxide comprises at least one of indium tin oxide, lanthanide metal doped indium oxide, boron doped zinc oxide, fluorine doped tin oxide, indium doped tungsten oxide, indium doped zinc oxide, aluminum doped zinc oxide, gallium zinc oxide; optionally, the metal comprises at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten; the elemental carbon material comprises at least one of graphite, graphene, and carbon nanotubes. Thus, the material type of the electrode layer is convenient to flexibly select according to actual needs.
Optionally, in some embodiments, the thickness of the first electrode layer 101 ranges from 10nm to 100nm. For example, the thickness of the first electrode layer 101 may be 10nm,15nm,30nm,50nm,80nm,90nm,100nm or any value within the above range.
Optionally, in some embodiments, the thickness of the second electrode layer 109 ranges from 10nm to 100nm. For example, the thickness of the second electrode layer 109 may be 10nm,15nm,30nm,50nm,80nm,90nm,100nm or any value within the above range.
In the technical scheme of the embodiment of the application, the thickness of each film layer can be measured by adopting a step instrument, and the specific measuring method can refer to the known measuring method of the step instrument.
In some embodiments, the first carrier transport layer 102, the second carrier transport layer 104, the third carrier transport layer 106, and the fourth carrier transport layer 108 are hole transport layers or electron transport layers.
The hole transport layer is used for transporting holes, and the material of the hole transport layer comprises a P-type semiconductor.
Optionally, the material of the hole transport layer includes at least one of the following materials and derivatives thereof: [4- (3, 6-dimethoxy-9H-carbazol-9-yl) butyl ] phosphoric acid, [2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphoric acid, [4- (3, 6-dibromo-9H-carbazol-9-yl) butyl ] phosphoric acid, [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ], poly-3-hexylthiophene, triptycene-nucleated triphenylamine, 3, 4-ethylenedioxythiophene-methoxytriphenylamine, N- (4-phenylamine) carbazole-spirobifluorene, poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide;
the electron transport layer is used for transporting electrons, and the material of the electron transport layer comprises an N-type semiconductor.
Optionally, the material of the electron transport layer comprises at least one of the following materials and derivatives thereof: bath copper agent [6,6 ]]-phenyl-C61-butanoic acid isopropyl ester, [6,6 ]]Phenyl C71-methyl butyrate, C60, C70, snO x And zinc oxide, wherein the value range of x is 1.5-2. For example, x is 2, and the material of the electron transport layer includes SnO 2 。
The above-described material used as the hole transport layer or the electron transport layer can improve the efficiency of the solar cell.
In some embodiments, the first carrier transport layer 102 is a hole transport layer, the second carrier transport layer 104 is an electron transport layer, the third carrier transport layer 106 is a hole transport layer, and the fourth carrier transport layer 108 is an electron transport layer.
In some embodiments, the material of the first light absorbing layer 103 is perovskite and the material of the second light absorbing layer 107 is perovskite.
The perovskite material has the advantages of high conversion efficiency, low cost, environmental protection and the like, can be prepared into a very thin film, is applied to a solar cell, and can effectively improve the efficiency of the solar cell.
In some embodiments, the first direction is the incident direction of sunlight, and the bandgap of the material of the first light absorbing layer 103 is greater than the bandgap of the material of the second light absorbing layer 107.
Band gap refers to the difference in energy between the lowest point of the conduction band and the highest point of the valence band in a semiconductor material.
Alternatively, the band gap of the material of the first light absorbing layer 103 is 1.6eV-2.3eV, and the band gap of the material of the second light absorbing layer 107 is 1eV-1.4eV, for example, the perovskite material of the first light absorbing layer 103 is bromoiodide mixed perovskite, and the perovskite material of the second light absorbing layer 107 is tin-lead mixed perovskite.
When the first direction is the incident direction of the sunlight, the sunlight irradiates the first light absorbing layer 103, and the band gap of the material of the first light absorbing layer 103 is set to be larger than that of the material of the second light absorbing layer 107, so that the efficiency of the solar cell is improved.
In some embodiments, the perovskite in the first light absorbing layer 103 and the second light absorbing layer 107 has the formula ABX 3 Wherein A comprises CH 3 (NH 2 ) 2 + 、CH(NH 2 ) 2 + 、CH 3 NH 2 + 、Li + 、Na + 、K + 、Rb + 、Cs + At least one of B includes Pb + 、Be 2 + 、Mg 2+ 、Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ At least one of X comprises Cl - 、Br - 、I - 、SCN - 、CNO - 、OCN - 、OSCN - 、SH - 、OH - 、CP - 、CN - 、SeCN - 、N 3 - 、NO 2 - At least one of them. In this way, the specific type of perovskite is convenient to flexibly select according to actual needs.
Optionally, in some embodiments, the material of the second light absorbing layer 107 is a silicon material, copper indium gallium selenide, copper gallium selenide, cadmium telluride, or gallium arsenide.
Optionally, in some embodiments, the solar cell 10 further comprises a blocking layer, such as a hole blocking layer, an electron blocking layer. Specifically, an electron blocking layer is provided between the light absorbing layer and the hole transporting layer, and a hole blocking layer is provided between the light absorbing layer and the electron transporting layer.
The electron blocking layer may function to transport holes and the hole blocking layer may function to transport electrons.
Optionally, as shown in fig. 3, the solar cell 10 further includes a first hole blocking layer 110, where the second carrier transport layer 104 is an electron transport layer, the first hole blocking layer 110 is located between the first light absorbing layer 103 and the second carrier transport layer 104.
Optionally, with continued reference to fig. 3, the solar cell 10 further includes a second hole blocking layer 111, where the fourth carrier transport layer 108 is an electron transport layer, the second hole blocking layer 111 is located between the second light absorbing layer 107 and the fourth carrier transport layer 108.
In the above technical solution, a hole blocking layer is disposed between the light absorbing layer and the electron transporting layer, which is favorable for improving electron transport between the electron transporting layer and the light absorbing layer, thereby improving efficiency of the solar cell 10.
Optionally, in some embodiments, the materials of the first hole blocking layer 110 and the second hole blocking layer 111 include at least one of fullerene, derivatives thereof, and SnOx, where x ranges from 1.5 to 2. For example, x may be 2, and the materials of the first hole blocking layer 110 and the second hole blocking layer 111 may include SnO2.
The above-described materials used as the materials of the first hole blocking layer 110 and the second hole blocking layer 111 may improve the efficiency of the solar cell 10.
[ method for producing solar cell ]
The solar cell provided by the embodiment of the present application is described above, and the method for manufacturing the solar cell provided by the embodiment of the present application is described below, where similar parts to those of the solar cell are not described again.
Fig. 4 is a schematic diagram of a method for manufacturing a solar cell according to an embodiment of the application. As shown in fig. 4, the preparation method 400 includes: a first electrode layer, a first carrier transport layer, a first light absorbing layer, a second carrier transport layer, a composite structure, a third carrier transport layer, a second light absorbing layer, a fourth carrier transport layer, and a second electrode layer are provided, which are sequentially arranged along a first direction.
The composite structure comprises a plurality of conductive layers and an insulating layer, wherein the conductive layers are discontinuously arranged in a second direction, the insulating layer is arranged between the conductive layers, and the second direction is perpendicular to the first direction.
The solar cell prepared by the method has higher cell efficiency.
Optionally, in some embodiments, the method 400 of making comprises: providing a first electrode layer; preparing a first carrier transport layer on the first electrode layer, wherein the first carrier transport layer is a hole transport layer; preparing a first light absorbing layer on the first carrier transport layer; preparing a second carrier transport layer on the first light absorption layer, wherein the second carrier transport layer is an electron transport layer; preparing a plurality of conductive layers and insulating layers on the second carrier transport layer to obtain a composite structure; preparing a third carrier transport layer on the composite structure, wherein the third carrier transport layer is a hole transport layer; preparing a second light absorbing layer on the third carrier transport layer; preparing a fourth carrier transport layer on the second light absorption layer, wherein the fourth carrier transport layer is an electron transport layer; and preparing a second electrode layer on the fourth carrier transport layer.
In some embodiments, the method 400 of making comprises: depositing a conductive material on the second carrier transport layer to produce a plurality of conductive layers; and depositing an insulating material on the second carrier transport layer to obtain an insulating layer so as to obtain the composite structure. For example, an atomic deposition technique may be used to deposit an insulating material on the second carrier transport layer.
In some embodiments, the method 400 of making comprises: depositing a conductive material on the second carrier transport layer to produce a plurality of conductive layers; depositing insulating materials on the second carrier transmission layer and the plurality of conductive layers to prepare a composite structure to be treated; and cleaning the composite structure to be treated by using hydrofluoric acid to obtain the composite structure.
It will be appreciated that when the insulating material is deposited on the second carrier transport layer after the conductive material is deposited on the second carrier transport layer to form the conductive layer, the insulating material may partially cover the conductive layer in addition to covering the second carrier transport layer, which may affect the carrier transport of the battery. Thus, after the insulating material is deposited, the resulting composite structure to be treated is subjected to a cleaning treatment with hydrofluoric acid (HF) to remove the insulating material overlying the conductive layer.
In some embodiments, the thickness d1 of the conductive layer ranges from 0.1nm to 10nm, and optionally, d1 ranges from 0.5nm to 1.2nm.
Specifically, the thickness d1 of the conductive layer may be 0.1nm, 0.5nm, 1nm, 1.2nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, or a value between any of the above values.
In some embodiments, the thickness d2 of the insulating layer ranges from 0.1nm to 10nm, and optionally, the thickness d2 ranges from 0.5nm to 1.2nm.
Specifically, the thickness d2 of the insulating layer may be 0.1nm, 0.5nm, 1nm, 1.2nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, or a value between any of the above values.
In the technical scheme, the thicknesses of the conductive layer and the insulating layer are set in the range, so that the efficiency of the solar cell is improved.
The embodiment of the application also provides a photovoltaic module. In general, a photovoltaic module includes the solar cell described above, a solder ribbon connecting a plurality of solar cells, a junction box for current transmission, and a cell package member.
In some embodiments, the cell packaging component comprises photovoltaic glass, and the photovoltaic glass covers the solar cell and plays a role in protecting the solar cell. Meanwhile, the photovoltaic glass has very good light transmittance and very high hardness, and can adapt to very large day and night temperature difference and severe weather environment.
In some embodiments, the cell encapsulation component comprises an EVA film disposed between the photovoltaic glass and the solar cell for bonding the photovoltaic glass and the solar cell.
In some embodiments, the cell packaging component includes a photovoltaic backsheet that also serves to protect the solar cell.
Optionally, the material of the photovoltaic backboard can be a polyvinyl fluoride composite film or a thermoplastic elastic material. The material of the photovoltaic backboard has the characteristics of insulation, water resistance, aging resistance and the like.
In some embodiments, the battery packaging component comprises a solar aluminum frame, is made of aluminum alloy, and has the characteristics of high strength, good corrosion resistance and the like. Can play a role in supporting and protecting the solar cell.
The embodiment of the application also provides a photovoltaic device, which comprises the photovoltaic module provided by the embodiment.
In some embodiments, the photovoltaic device may also be a lighting apparatus, an energy storage apparatus, etc., embodiments of the present application including but not limited to this. For example, the photovoltaic device may be a solar water heater, a solar street lamp, a solar photovoltaic generator, or the like.
Examples (example)
Hereinafter, embodiments of the present application are described. The following examples are illustrative only and are not to be construed as limiting the application. The examples are not to be construed as limiting the specific techniques or conditions described in the literature in this field or as per the specifications of the product.
1. Preparation of solar cells
Example 1
Example 1 corresponds to the structure of the solar cell shown in fig. 1.
A first electrode layer: the first electrode layer is arranged on the glass substrate, the material of the first electrode layer is Indium Tin Oxide (ITO), the glass substrate with the first electrode layer is sequentially cleaned by acetone-alcohol-deionized water, and the glass substrate is dried for later use.
First carrier transport layer (hole transport layer): adding [4- (3, 6-dimethoxy-9H-carbazole-9-yl) butyl ] phosphoric acid (MeO-4 PACz) into an ethanol solvent, stirring, spin-coating an ethanol solution of the MeO-4PACz onto a first electrode layer (the spin-coating rotating speed is 4000rpm, the spin-coating time is 30 s), and then transferring to a heat table to anneal for 10min at 100 ℃ to form a first carrier transport layer.
A first light absorbing layer: 3mg of FAI, 59mg of FABr, 46mg of CsI, 25mg of CsBr and 428mg of PbI 2 And 209mg of PbBr 2 Added to 1mL of a solvent mixture of DMF and DMSO (DMF and DMSO in a volume ratio of 3:1), stirred on a magnetic stirrer at 600rpm for 8h, and filtered to obtain a perovskite precursor solution. 100. Mu.L of the perovskite precursor solution was spin-coated onto the first carrier transport layer (spin-coated at 2000rpm and 200rpm/s acceleration for 10s, spin-coated at 4000rpm and 1000rpm/s acceleration for 25 s), then 200. Mu.L of chlorobenzene was added dropwise to the spin-coated perovskite precursor solution, then the perovskite precursor solution was spin-coated (spin-coated at 4000rpm and 15s time), and then transferred to a hot stage for annealing at 100℃for 15min to form a first light-absorbing layer.
Second carrier transport layer (electron transport layer): preparation of a layer of 20nm SnO on the first light absorbing layer Using an Atomic Layer Deposition (ALD) apparatus 2 And forming a second carrier transport layer.
Composite structure: spin-coating a 1nm 80% ethoxylated polyacetyl imine (PEIE) on the second carrier transport layer, preparing ITO on the PEIE using ALD equipment to form a plurality of conductive layers having a thickness d1 of 1 nm; deposition of Al 1nm thick on bare PEIE using ALD apparatus 2 O 3 And forming an insulating layer with the thickness d2 of 1nm to prepare the composite structure.
Third carrier transport layer (hole transport layer): poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT: PSS) was spin-coated on the above composite layer (spin-coating speed 4000rpm, spin-coating time 30 s), and then transferred to a thermal station for annealing at 150 ℃ for 10min, forming a third carrier transport layer.
A second light absorbing layer: 2mg of CH (NH) 2 ) 2 I. 85mg of CH 3 NH 2 I. 4mg PbI 2 SnI of 335mg 2 0.5mg of MeO-4PACz is added into 1mL of a solvent mixed by DMF and DMSO (the volume ratio of DMF and DMSO is 3:1), stirred on a magnetic stirrer at 600rpm for 2h, and filtered to prepare a perovskite precursor solution; 100. Mu.L of the perovskite precursor solution was spin-coated onto the third carrier transport layer (spin-coated at 1000rpm and an acceleration of 200rpm/s for 10s, spin-coated at 3000 and an acceleration of 1000rpm/s for 20 s), followed by dropwise addition of 350. Mu.L of ethyl acetate to the spin-coated perovskite precursor solution, followed by spin-coating of the perovskite precursor solution (spin-coated at 4000rpm and a spin-coating time of 20 s), followed by transfer to a hot stage for annealing at 100℃for 10min, to form a second light-absorbing layer.
Fourth carrier transport layer (electron transport layer): a layer 10 of Bathocuproine (BCP) was vapor deposited over the second light absorbing layer to form a fourth carrier transporting layer.
A second electrode layer: and evaporating a layer of 100nm metal copper (Cu) on the fourth carrier transmission layer to form a second electrode layer. The solar cell of example 1 was finally produced.
Examples 2 to 5, 10
Examples 2 to 5 and 10 were similar to the preparation of example 1, except that the thickness d1 of the conductive layer in examples 2 to 5 and 10 was 0.1nm,0.5nm,1.2nm,10nm and 12nm, respectively, as shown in Table 1.
Examples 6 to 9, 11
Examples 6 to 9, 11 were similar to the preparation of example 1, except that the thickness d2 of the insulating layer in examples 6 to 9, 11 was 0.1nm,0.5nm,1.2nm,10nm,12nm, respectively, as detailed in Table 1.
Example 12
Example 12 is similar to the preparation of example 1, except that the composite structure of example 12 was prepared: spin coating a 1nm 80% ethoxylated Polyacetylimine (PEIE) on the second carrier transport layer using ALD apparatusPreparing ITO on the PEIE to form a plurality of conductive layers with the thickness d1 of 1.2 nm; deposition of Al with a thickness of 3nm on PEIE with ALD apparatus 2 O 3 The conductive layer is covered with Al 2 O 3 ；
The deposited Al is treated with HF 2 O 3 Cleaning Al 2 O 3 Is 2nm thick as a whole, will be coated with Al 2 O 3 And exposing the covered conductive layer, and forming an insulating layer with the thickness d2 of 1nm in an area uncovered by the ITO to prepare the composite structure.
Example 13
Example 13 was similar to the preparation of example 1, except that the first and second carrier transport layers were prepared in example 13: in example 13, the first carrier transport layer was an electron transport layer and a layer of 20nm SnO was formed on the first electrode layer using ALD apparatus 2 Forming a first carrier transport layer; the second carrier transport layer was a hole transport layer, meO-4PACz was added to an ethanol solvent and stirred, the ethanol solution of MeO-4PACz was spin-coated onto the first light absorbing layer (spin-coating speed of 4000rpm, spin-coating time of 30 s), and then transferred to a hot stage for annealing at 100℃for 10min to form the second carrier transport layer.
Example 14
Example 14 was similar to the preparation of example 1 except that in example 14, the solar cell further included a first hole blocking layer and a second hole blocking layer. Specifically, a first hole blocking layer is provided between the first light absorbing layer and the second carrier transporting layer, a layer of C60 of 25nm is evaporated on the first light absorbing layer to form the first hole blocking layer, and then the second carrier transporting layer is prepared on the first hole blocking layer (for the preparation process of the second carrier transporting layer, see example 1); a second hole blocking layer was provided between the second light absorbing layer and the fourth carrier transporting layer, a layer of C60 of 25nm was vapor-deposited on the second light absorbing layer to form a second hole blocking layer, and then a second electrode layer was prepared on the second hole blocking layer (for the preparation process of the second electrode layer, see example 1).
Example 15
Example 15 was similar to the preparation of example 1, except that in example 15, the material of the conductive layer was tungsten doped indium oxide (IWO), as detailed in table 1.
Example 16
Example 16 is similar to the preparation of example 1, except that in example 16, the material of the second light absorbing layer is monocrystalline silicon. Preparation of the second light absorbing layer: cleaning monocrystalline silicon by using strong alkali to make texture surface to obtain double-sided texture surface; then preparing a layer of 5nm intrinsic i-type amorphous silicon and 100nm doped p-type amorphous silicon on one side of the monocrystalline silicon wafer subjected to double-sided texturing by using Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, and then preparing a layer of 5nm intrinsic i-type amorphous silicon and 100nm doped N-type amorphous silicon on the other side of the monocrystalline silicon wafer by using PECVD equipment; the sample from which amorphous silicon has been prepared is prepared to form a layer of 100nm ITO on both sides of the sample using a Physical Vapor Deposition (PVD) apparatus, respectively, to prepare a second light absorbing layer.
Comparative example 1
Comparative example 1 was similar to the preparation of example 1, except that the composite structure in comparative example 1 included only a 1nm ITO conductive layer.
Next, a test procedure of the solar cell performance will be described.
2. Performance test of solar cells
In standard simulated sunlight (AM 1.5G,100 mW/cm 2 ) And under irradiation, testing the performance of the battery to obtain an I-V curve. The short-circuit current Jsc (unit mA/cm) can be obtained according to the I-V curve and the data fed back by the test equipment 2 ) Open circuit voltage Voc (unit V), maximum light output current Jmpp (unit mA), and maximum light output voltage Vmpp (unit V). The fill factor FF of the battery in% is calculated by the formula ff=jsc×voc/(jmpp×vmpp). The photoelectric conversion efficiency PCE of the battery is calculated according to the formula PCE=jsc×Voc×FF/Pin, and the unit is calculated; pin represents the input power of the incident light in mW.
The battery performance test was conducted according to the above method for each of examples 1 to 16 and comparative example 1, and the test results are shown in Table 1. In table 1, d1 represents the thickness of the conductive layer, and d2 represents the thickness of the insulating layer.
Table 1: product parameters and Performance test results for examples 1-16 and comparative example 1
As is apparent from comparison of the results of comparative example 1 and examples 1 to 11, the composite structure between the first light absorbing layer and the second light absorbing layer in the solar cell includes a plurality of conductive layers and an insulating layer disposed between the plurality of conductive layers, and the efficiency of the solar cell is improved.
As can be seen from comparison of the results of examples 1 to 5 and example 10, the thickness of the conductive layer is set within a suitable range, the efficiency improvement effect of the solar cell is more remarkable, and under the same other conditions, the thickness of the conductive layer is set within a range of 0.5nm to 1.2nm, and the efficiency improvement effect of the solar cell is more remarkable.
As can be seen from comparison of the results of examples 6 to 9 and example 11, the thickness of the insulating layer was set in a suitable range, and the efficiency improvement effect of the solar cell was more remarkable, and under the same other conditions, the thickness of the insulating layer was set in a range of 0.5nm to 1.2nm, and the efficiency improvement effect of the solar cell was more remarkable.
As is clear from comparison between the results of example 1 and example 14, the hole blocking layer was provided between the light absorbing layer and the electron transporting layer, which is advantageous in improving the efficiency of the solar cell.
The present application is not limited to the above embodiment. The above embodiments are merely examples, and embodiments having substantially the same configuration and the same effects as those of the technical idea within the scope of the present application are included in the technical scope of the present application. Further, various modifications that can be made to the embodiments and other modes of combining some of the constituent elements in the embodiments, which are conceivable to those skilled in the art, are also included in the scope of the present application within the scope not departing from the gist of the present application.

Claims (31)

1. A solar cell, comprising:
the first electrode layer, the first carrier transmission layer, the first light absorption layer, the second carrier transmission layer, the composite structure, the third carrier transmission layer, the second light absorption layer, the fourth carrier transmission layer and the second electrode layer are sequentially arranged along the first direction;
the composite structure comprises a plurality of conductive layers and an insulating layer, wherein the conductive layers are discontinuously arranged in a second direction, the insulating layer is arranged between the conductive layers, and the second direction is perpendicular to the first direction.
2. The solar cell of claim 1, wherein the conductive material of the conductive layer comprises at least one of an organic conductive material and an inorganic conductive material.
3. The solar cell of claim 2, wherein the conductive material comprises at least one of transparent conductive oxides, metals and alloys thereof, elemental carbon materials.
4. The solar cell of claim 3, wherein the transparent conductive oxide comprises at least one of indium tin oxide, fluorine doped tin oxide, antimony doped tin oxide, indium doped tungsten oxide, indium doped zinc oxide, aluminum doped zinc oxide, boron doped zinc oxide;
The metal comprises at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum and tungsten;
the carbon simple substance material comprises at least one of graphite, graphene and carbon nano tubes.
5. The solar cell of claim 1, wherein the insulating material of the insulating layer comprises at least one of a metal oxide, a metal fluoride, a metal nitride, an organic insulating material.
6. The solar cell of claim 5, wherein the insulating material comprises aluminum oxide.
7. The solar cell according to claim 1, wherein the thickness d1 of the conductive layer ranges from 0.1nm to 10nm.
8. The solar cell according to claim 7, wherein the thickness d1 of the conductive layer ranges from 0.5nm to 1.2nm.
9. The solar cell according to claim 1, wherein the thickness d2 of the insulating layer ranges from 0.1nm to 10nm.
10. The solar cell according to claim 9, wherein the thickness d2 of the insulating layer has a value ranging from 0.5nm to 1.2nm.
11. The solar cell of claim 1, wherein the material of the first electrode layer and the second electrode layer comprises at least one of a conductive oxide, a metal and alloys thereof, a elemental carbon material.
12. The solar cell of claim 11, wherein the conductive oxide comprises at least one of indium tin oxide, lanthanide metal doped indium oxide, boron doped zinc oxide, fluorine doped tin oxide, indium doped tungsten oxide, indium doped zinc oxide, aluminum doped zinc oxide, gallium zinc oxide;
the metal comprises at least one of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum and tungsten;
the carbon simple substance material comprises at least one of graphite, graphene and carbon nano tubes.
13. The solar cell according to claim 1, wherein the first carrier transport layer, the second carrier transport layer, the third carrier transport layer, and the fourth carrier transport layer are hole transport layers or electron transport layers;
the material of the hole transport layer comprises a P-type semiconductor, and the material of the electron transport layer comprises an N-type semiconductor.
14. The solar cell according to claim 13, wherein the material of the hole transport layer comprises at least one of the following materials and derivatives thereof: [4- (3, 6-dimethoxy-9H-carbazol-9-yl) butyl ] phosphoric acid, [2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphoric acid, [4- (3, 6-dibromo-9H-carbazol-9-yl) butyl ] phosphoric acid, [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ], poly-3-hexylthiophene, triptycene-nucleated triphenylamine, 3, 4-ethylenedioxythiophene-methoxytriphenylamine, N- (4-phenylamine) carbazole-spirobifluorene, poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid, polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide;
The material of the electron transport layer comprises at least one of the following materials and derivatives thereof: bath copper agent [6,6 ]]-phenyl-C61-butanoic acid isopropyl ester, [6,6 ]]Phenyl C71-methyl butyrate, C60, C70, snO x And zinc oxide, wherein the value range of x is 1.5-2.
15. The solar cell of claim 1, wherein the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the third carrier transport layer is a hole transport layer, and the fourth carrier transport layer is an electron transport layer.
16. The solar cell according to any one of claims 1 to 15, wherein the material of the first light absorbing layer is perovskite and the material of the second light absorbing layer is perovskite.
17. The solar cell of claim 16, wherein the first direction is a direction of incidence of solar light, and wherein a band gap of a material of the first light absorbing layer is greater than a band gap of a material of the second light absorbing layer.
18. The solar cell of claim 17, wherein the perovskite in the first light absorbing layer and the second light absorbing layer has a chemical formula ABX 3 Wherein, the method comprises the steps of, wherein,
a comprises CH 3 (NH 2 ) 2 + 、CH(NH 2 ) 2 + 、CH 3 NH 2 + 、Li + 、Na + 、K + 、Rb + 、Cs + At least one of B includes Pb + 、Be 2+ 、Mg 2+ 、Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ At least one of X comprises Cl - 、Br - 、I - 、SCN - 、CNO - 、OCN - 、OSCN - 、SH - 、OH - 、CP - 、CN - 、SeCN - 、N 3 - 、NO 2 - At least one of them.
19. The solar cell of claim 15, further comprising a first hole blocking layer positioned between the first light absorbing layer and the second carrier transporting layer.
20. The solar cell of claim 19, further comprising a second hole blocking layer positioned between the second light absorbing layer and the fourth carrier transport layer.
21. The solar cell according to claim 20, wherein the material of the first and second hole blocking layers comprises fullerenes and derivatives thereof, snO x At least one of the above, wherein the value range of x is 1.5-2.
22. A method of manufacturing a solar cell, comprising:
providing a first electrode layer, a first carrier transmission layer, a first light absorption layer, a second carrier transmission layer, a composite structure, a third carrier transmission layer, a second light absorption layer, a fourth carrier transmission layer and a second electrode layer which are sequentially arranged along a first direction;
The composite structure comprises a plurality of conductive layers and an insulating layer, wherein the conductive layers are discontinuously arranged in a second direction, the insulating layer is arranged between the conductive layers, and the second direction is perpendicular to the first direction.
23. The method of claim 22, wherein providing the first electrode layer, the first carrier transport layer, the first light absorbing layer, the second carrier transport layer, the composite structure, the third carrier transport layer, the second light absorbing layer, the fourth carrier transport layer, and the second electrode layer sequentially arranged along the first direction comprises:
providing the first electrode layer;
preparing the first carrier transport layer on the first electrode layer, wherein the first carrier transport layer is a hole transport layer;
preparing the first light absorbing layer on the first carrier transporting layer;
preparing the second carrier transport layer on the first light absorption layer, wherein the second carrier transport layer is an electron transport layer;
preparing the plurality of conductive layers and the insulating layer on the second carrier transport layer to obtain the composite structure;
preparing a third carrier transport layer on the composite structure, wherein the third carrier transport layer is a hole transport layer;
Preparing the second light absorbing layer on the third carrier transporting layer;
preparing the fourth carrier transport layer on the second light absorption layer, wherein the fourth carrier transport layer is an electron transport layer;
the second electrode layer is prepared on the fourth carrier transport layer.
24. The method of manufacturing according to claim 23, wherein the manufacturing the plurality of conductive layers and the insulating layer on the second carrier transporting layer, the manufacturing the composite structure, comprises:
depositing a conductive material on the second carrier transport layer to produce the plurality of conductive layers;
and depositing an insulating material on the second carrier transport layer to obtain the insulating layer so as to obtain the composite structure.
25. The method of manufacturing according to claim 23, wherein the manufacturing the plurality of conductive layers and the insulating layer over the second carrier transporting layer includes:
depositing a conductive material on the second carrier transport layer to produce the plurality of conductive layers;
depositing an insulating material on the second carrier transport layer and the plurality of conductive layers to obtain a composite structure to be treated;
and cleaning the composite structure to be treated by using hydrofluoric acid to obtain the composite structure.
26. The method of claim 22, wherein the thickness d1 of the conductive layer ranges from 0.1nm to 10nm.
27. The method of claim 26, wherein the thickness d1 of the conductive layer ranges from 0.5nm to 1.2nm.
28. The method according to any one of claims 22 to 27, wherein the thickness d2 of the insulating layer has a value ranging from 0.1nm to 10nm.
29. The method of claim 28, wherein the thickness d2 of the insulating layer has a value ranging from 0.5nm to 1.2nm.
30. A photovoltaic module comprising a solar cell according to any one of claims 1 to 21.
31. A photovoltaic device comprising the photovoltaic module of claim 30.
CN202310943566.7A 2023-07-31 2023-07-31 Solar cell, preparation method thereof, photovoltaic module and photovoltaic device Pending CN116669441A (en)

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