CN116669290A - High-cost-performance low-dielectric-constant substrate and manufacturing method thereof - Google Patents
High-cost-performance low-dielectric-constant substrate and manufacturing method thereof Download PDFInfo
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- CN116669290A CN116669290A CN202310603296.5A CN202310603296A CN116669290A CN 116669290 A CN116669290 A CN 116669290A CN 202310603296 A CN202310603296 A CN 202310603296A CN 116669290 A CN116669290 A CN 116669290A
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- manufacturing
- dielectric constant
- plate layer
- substrate
- constant substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000007888 film coating Substances 0.000 claims abstract description 6
- 238000009501 film coating Methods 0.000 claims abstract description 6
- 239000004743 Polypropylene Substances 0.000 claims description 39
- 239000003292 glue Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- -1 polypropylene Polymers 0.000 claims description 10
- 238000013329 compounding Methods 0.000 claims description 9
- 229920001155 polypropylene Polymers 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 4
- 238000007731 hot pressing Methods 0.000 claims description 4
- 239000012943 hotmelt Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 25
- 239000000463 material Substances 0.000 abstract description 5
- 239000012790 adhesive layer Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004005 microsphere Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- WOCGGVRGNIEDSZ-UHFFFAOYSA-N 4-[2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical compound C=1C=C(O)C(CC=C)=CC=1C(C)(C)C1=CC=C(O)C(CC=C)=C1 WOCGGVRGNIEDSZ-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical compound OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- VOOLKNUJNPZAHE-UHFFFAOYSA-N formaldehyde;2-methylphenol Chemical compound O=C.CC1=CC=CC=C1O VOOLKNUJNPZAHE-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
Abstract
The invention discloses a high cost performance low dielectric constant substrate and a manufacturing method thereof, and the technical scheme is as follows: the substrate comprises a PP plate layer, wherein an AL film layer is compositely fixed on the surface of the PP plate layer through an adhesive layer. A manufacturing method of a high-cost-performance low-dielectric-constant substrate comprises the following steps: after the PP plate layer and the Al film layer are compounded, a high-cost-performance low-dielectric-constant substrate is manufactured by a circuit board manufacturing method, and the circuit board manufacturing method comprises blue film coating, exposure, development, etching and film stripping. The substrate with high cost performance and low dielectric constant and the manufacturing method thereof reduce the dielectric constant and low dielectric loss of the substrate material for bearing the electronic component.
Description
Technical Field
The invention relates to the technical field of circuit boards, in particular to a high-cost-performance low-dielectric-constant substrate and a manufacturing method thereof.
Background
With the progress of integrated circuit technology, chips with high speed and high device density are becoming the main chips in ultra-large scale, at this time, the density of wires in the chips is continuously increased, the widths and the pitches of the wires are continuously reduced, and the parasitic effects generated by the resistors and the capacitors in the interconnection circuit are more and more obvious.
For example, a low dielectric constant PCB substrate and a method for manufacturing the same are disclosed in the chinese patent with publication number CN 102625574B. The PCB substrate is formed by laminating and pressing a piece of prepreg or a plurality of prepregs, wherein copper foils are respectively coated on two surfaces of the prepreg, the prepreg is prepared by gluing and drying resin through glass fiber cloth, and the resin is prepared by uniformly mixing the following components in weight: 68.7 parts of polyimide resin liquid, 31.3 parts of cyanate resin liquid and 3-4 parts of diallyl bisphenol A, wherein 2-5 parts of hollow glass microspheres are added into the resin. The PCB substrate fully digs the inherent advantages of the hollow glass microsphere with the superfine particle size, and the Dk can be reduced to below 3.0 after the blending emulsification by adding a small amount of the hollow glass microsphere into a polyimide/cyanate ester copolymer resin system.
Further, as in the chinese patent with the existing publication number CN105001582a, a method for preparing a low dielectric constant substrate is disclosed, which comprises the steps of obtaining filler from silica sol, nano hollow alumina, sodium dodecyl sulfate, dodecanol, oleic acid, sodium persulfate and methyl methacrylate; taking o-cresol formaldehyde epoxy resin, cyanate resin monomer, lauric acid polyoxyethylene ether and N-methylol acrylamide as raw materials to obtain a resin prepolymer; sequentially adding benzimidazole and filler into the resin prepolymer, and stirring for 2 hours at 120 ℃; then adding the phenol-oxygen resin and continuously stirring for 2 hours; then adding polyetherimide; then stirring for 2 hours at 150 ℃; obtaining a composite system; placing the composite system into a mould preheated at 150 ℃, and hot-pressing to obtain a low dielectric constant substrate; has excellent mechanical property and heat resistance, and can meet the development and application of the low dielectric constant substrate.
The above-mentioned patents have some drawbacks such as: to overcome the difficulties, there is a need to reduce the dielectric constant and low dielectric loss of the substrate material carrying the electronic components. The materials that are currently more common in the market and meet these requirements are mainly (polyimide) PI, polytetrafluoroethylene (PTFE), liquid Crystal Polymers (LCP), which are currently more or less problematic in terms of cost, or in terms of physical or electrical aspects.
Disclosure of Invention
In view of the problems mentioned in the background art, an object of the present invention is to provide a substrate with high cost performance and low dielectric constant and a manufacturing method thereof, so as to solve the problems mentioned in the background art.
The technical aim of the invention is realized by the following technical scheme:
the substrate comprises a PP plate layer, wherein an AL film layer is compositely fixed on the surface of the PP plate layer through an adhesive layer.
The invention also discloses a manufacturing method of the high-cost-performance low-dielectric-constant substrate, which comprises the following steps: after the PP plate layer and the Al film layer are compounded, a high-cost-performance low-dielectric-constant substrate is manufactured by a circuit board manufacturing method, and the circuit board manufacturing method comprises blue film coating, exposure, development, etching and film stripping.
Preferably, the PP sheet layer is modified PP, and the dielectric constant of the PP sheet layer is less than or equal to 2.6.
Preferably, during compounding, modified chlorinated polypropylene is coated on the PP plate layer, and finally an Al film layer is fixed on the PP plate layer coated with glue through hot pressing compounding.
Preferably, the modified chlorinated polypropylene is solvent coated or hot melt coated.
Preferably, the heat compounding is performed by baking at 50 degrees for 5 minutes and 110 degrees for 1 minute in sequence.
Preferably, the glue is HY-302AB glue.
In summary, the invention has the following advantages:
the substrate with high cost performance and low dielectric constant and the manufacturing method thereof reduce the dielectric constant and low dielectric loss of the substrate material for bearing the electronic component.
Drawings
Fig. 1 is a structural diagram of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Referring to fig. 1, a high cost performance low dielectric constant substrate comprises a PP plate layer, wherein an AL film layer is compositely fixed on the surface of the PP plate layer through an adhesive layer.
The embodiment also discloses a manufacturing method of the high-cost-performance low-dielectric-constant substrate, which comprises the following steps: after the PP plate layer and the Al film layer are compounded, a high-cost-performance low-dielectric-constant substrate is manufactured by a circuit board manufacturing method, and the circuit board manufacturing method comprises blue film coating, exposure, development, etching and film stripping.
The PP plate layer is modified PP, and the dielectric constant of the PP plate layer is less than or equal to 2.6.
And during compounding, coating modified chlorinated polypropylene on the PP plate layer, and finally compounding an Al film layer on the PP plate layer coated with the glue through hot pressing for fixation.
Wherein the modified chlorinated polypropylene is solvent-coated or hot-melt coated.
Wherein, when the heat compounding is performed, the baking is performed for 5 minutes at 50 ℃ and 1 minute at 110 ℃.
Wherein the glue is HY-302AB glue.
The substrate material for bearing the electronic component has the advantages of low cost and the like, and the production process is simpler.
Example 2
PP (commercially available 2 mm), al film (8 microns). Chlorinated polypropylene resin (Jitian chemical E0101-X) is hot-melt coated (120 degrees) on PP, and then an Al film is hot-pressed and compounded on the PP sheet coated with glue. And then according to the required circuit pattern, the manufacturing of the substrate with high cost performance and low dielectric constant is realized by the traditional circuit board manufacturing method (processes of blue film coating, exposure, development, etching, film stripping and the like). The dielectric constant was measured to be 2.5.
Example 3
PP (commercial 2mm, foam), al film (12 microns). Chlorinated polypropylene resin (DX-530 of eastern ocean japan)) was solvent-coated (DX 530 was dissolved with toluene at present, and solid content was 30%) on PP, followed by baking at 50 degrees for 5 minutes and 110 degrees for 1 minute in sequence (chlorinated polypropylene resin thickness 20 μm), and then Al film was hot-pressed and compounded on the PP sheet coated with glue. And then according to the required circuit pattern, the manufacturing of the substrate with high cost performance and low dielectric constant is realized by the traditional circuit board manufacturing method (processes of blue film coating, exposure, development, etching, film stripping and the like). The dielectric constant was measured to be 2.45.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A high cost performance low dielectric constant substrate is characterized in that: the novel plastic composite plate comprises a PP plate layer, wherein an AL film layer is fixed on the surface of the PP plate layer through a glue layer in a composite mode.
2. A manufacturing method of a high-cost-performance low-dielectric-constant substrate is characterized by comprising the following steps: the method comprises the following steps: after the PP plate layer and the Al film layer are compounded, a high-cost-performance low-dielectric-constant substrate is manufactured by a circuit board manufacturing method, and the circuit board manufacturing method comprises blue film coating, exposure, development, etching and film stripping.
3. The method for manufacturing a low dielectric constant substrate with high cost performance according to claim 2, wherein: the PP plate layer is modified PP, and the dielectric constant of the PP plate layer is less than or equal to 2.6.
4. The method for manufacturing a low dielectric constant substrate with high cost performance according to claim 2, wherein: and during compounding, coating modified chlorinated polypropylene on the PP plate layer, and finally compounding an Al film layer on the PP plate layer coated with the glue through hot pressing for fixation.
5. The method for manufacturing a cost effective low dielectric constant substrate according to claim 3, wherein: the modified chlorinated polypropylene is solvent-coated or hot-melt coated.
6. The method for manufacturing a low dielectric constant substrate with high cost performance according to claim 2, wherein: the heat compounding was performed by baking at 50 degrees for 5 minutes and 110 degrees for 1 minute in this order.
7. The method for manufacturing a low dielectric constant substrate with high cost performance according to claim 2, wherein: the glue is HY-302AB glue.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310603296.5A CN116669290A (en) | 2023-05-26 | 2023-05-26 | High-cost-performance low-dielectric-constant substrate and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310603296.5A CN116669290A (en) | 2023-05-26 | 2023-05-26 | High-cost-performance low-dielectric-constant substrate and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116669290A true CN116669290A (en) | 2023-08-29 |
Family
ID=87721718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202310603296.5A Pending CN116669290A (en) | 2023-05-26 | 2023-05-26 | High-cost-performance low-dielectric-constant substrate and manufacturing method thereof |
Country Status (1)
Country | Link |
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CN (1) | CN116669290A (en) |
-
2023
- 2023-05-26 CN CN202310603296.5A patent/CN116669290A/en active Pending
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