CN116661523A - Temperature control system and method applied to semiconductor probe station - Google Patents
Temperature control system and method applied to semiconductor probe station Download PDFInfo
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- CN116661523A CN116661523A CN202310663477.7A CN202310663477A CN116661523A CN 116661523 A CN116661523 A CN 116661523A CN 202310663477 A CN202310663477 A CN 202310663477A CN 116661523 A CN116661523 A CN 116661523A
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/22—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element being a thermocouple
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Abstract
A temperature control system and a method applied to a semiconductor probe station relate to the field of data processing. The system comprises a liquid nitrogen tank, an air tank, a semiconductor probe platform, a vacuum pump, a temperature measuring component and a controller, wherein the semiconductor probe platform comprises a sample platform which is used for bearing a semiconductor sample; the liquid nitrogen tank is connected with the sample table through an input pipeline, the liquid nitrogen is used for cooling the sample table, and the output port of the liquid nitrogen tank is provided with a first electromagnetic valve; the air tank is connected with the sample table through an input pipeline, and the output port of the air tank is provided with a second electromagnetic valve; the vacuum pump is connected with the sample stage through an output pipeline and is used for pumping liquid nitrogen into the sample stage; the temperature measuring assembly comprises a contact type temperature sensor and a plurality of infrared temperature measuring sensors, wherein the contact type temperature sensor is used for measuring the temperature of the sample table, and the plurality of infrared temperature measuring sensors are used for measuring the temperature of the sample table by infrared rays. By implementing the technical scheme provided by the application, the sample stage can be quickly cooled conveniently.
Description
Technical Field
The application relates to the technical field of data processing, in particular to a temperature control system and a temperature control method applied to a semiconductor probe station.
Background
With the continuous development of semiconductor technology, the size of chip devices is continuously reduced, the test requirements are also higher and higher, and more accurate, high-speed and reliable test instruments are required to meet the requirements. Thus, semiconductor probe stations have been developed.
The semiconductor probe station is an instrument for testing semiconductor samples, and is mainly used for testing the performance and reliability of semiconductor electronic components in a chip. In the test process, when a sample stage in the semiconductor probe stage is in a high-temperature environment, the test of the semiconductor sample is prevented from being influenced by thermal noise. Therefore, the sample stage needs to be cooled. However, in the related art, cooling water is generally adopted to circularly cool the sample stage, and the overall cooling speed is slower due to the larger specific heat capacity of the water, so that the problem of unstable temperature control exists.
Therefore, there is an urgent need for a temperature control system and method for a semiconductor probe station.
Disclosure of Invention
The application provides a temperature control system and a temperature control method applied to a semiconductor probe station, which are convenient for rapidly cooling a sample station.
In a first aspect of the application, a temperature control system applied to a semiconductor probe station is provided, the temperature control system comprises a liquid nitrogen tank, an air tank, the semiconductor probe station, a vacuum pump, a temperature measuring component and a controller, wherein the semiconductor probe station comprises a sample station, and the sample station is used for bearing a semiconductor sample; the liquid nitrogen tank is connected with the sample table through an input pipeline, liquid nitrogen is stored in the liquid nitrogen tank and used for cooling the sample table, a first electromagnetic valve is arranged at an output port of the liquid nitrogen tank and used for opening or closing the output of the liquid nitrogen; the air tank is connected with the sample table through the input pipeline, air is stored in the air tank and used for evacuating liquid nitrogen in the input pipeline, a second electromagnetic valve is arranged at an output port of the air tank and used for opening or closing output of the air; the vacuum pump is connected with the sample stage through an output pipeline and is used for pumping the liquid nitrogen into the sample stage; the temperature measuring assembly comprises a contact type temperature sensor and a plurality of infrared temperature measuring sensors, wherein the contact type temperature sensor is positioned inside the sample platform and is used for measuring the temperature of the sample platform; the controller is electrically connected with the contact type temperature sensor, the first electromagnetic valve and the second electromagnetic valve, and the controller is electrically connected with the plurality of infrared temperature measuring sensors.
Through adopting above-mentioned technical scheme, when contact temperature sensor detects the high temperature of sample platform, the controller will automatic control vacuum pump follow liquid nitrogen tank in the extraction liquid nitrogen for the low temperature liquid nitrogen is through the input pipeline flow through the sample platform, thereby carries out quick cooling to the sample platform, and then is convenient for control the temperature of sample platform.
Optionally, the temperature control system further includes a heating block, the heating block is sleeved on the output pipeline, and the heating block is used for heating the liquid nitrogen in the output pipeline to generate nitrogen.
Through adopting above-mentioned technical scheme, the heating piece can heat the liquid nitrogen in the output pipeline, makes it produce nitrogen gas to reduce vacuum pump suction liquid nitrogen, lead to vacuum pump trouble probability.
Optionally, the temperature control system further comprises a muffler, the muffler is connected with the vacuum pump through an exhaust pipeline, the exhaust pipeline is used for discharging nitrogen formed after the liquid nitrogen is heated, and the muffler is used for carrying out noise reduction treatment on the nitrogen.
Through adopting above-mentioned technical scheme, the muffler can carry out noise reduction to exhaust line exhaust nitrogen gas to reduce the thermal noise that nitrogen gas produced, reduced the influence of thermal noise to sample wafer stage test semiconductor.
Optionally, the temperature control system further includes a heating wire, where the heating wire is disposed in the sample stage, and the heating wire is used to heat the sample stage.
Through adopting above-mentioned technical scheme, when contact temperature sensor detects that the temperature of sample platform is too low, the controller will automatically controlled heater heats the sample platform to satisfy the temperature requirement of sample platform test semiconductor, and then guaranteed the normal use of semiconductor probe platform.
Optionally, the input pipeline and the output pipeline are both sleeved with heat insulation cotton, and the heat insulation cotton is used for insulating the input pipeline and the output pipeline.
By adopting the technical scheme, because the temperature of liquid nitrogen is extremely low, when the liquid nitrogen flows through the input pipeline and the output pipeline, the problem that the outer wall of the pipeline is frozen possibly exists. Through establish the heat preservation cotton to input pipeline and output pipeline cover, reduced the frozen probability of input pipeline and output pipeline outer wall to guaranteed input pipeline and output pipeline's normal use, and then ensured that the sample platform bears the weight of going on smoothly of semiconductor and semiconductor test.
In a second aspect of the present application, there is provided a temperature control method applied to a semiconductor probe station, the temperature control method being applied to a controller in a temperature control system as described above, the method comprising:
Receiving a first temperature measured value sent by the contact type temperature sensor, wherein the first temperature measured value is larger than a preset temperature threshold value;
inputting the first temperature measured value into a preset temperature control model to obtain a first pumping speed, wherein the preset temperature control model comprises a corresponding relation between the temperature measured value and the pumping speed, and the first pumping speed is the speed at which the vacuum pump pumps the liquid nitrogen from the liquid nitrogen tank to flow through the sample stage;
and sending a first control signal to the vacuum pump, wherein the first control signal comprises the first pumping speed so as to control the vacuum pump to pump liquid nitrogen in the liquid nitrogen tank into the sample platform according to the first pumping speed, so as to cool the sample platform.
By adopting the technical scheme, the controller firstly receives the first temperature measured value sent by the contact temperature sensor, and when the first temperature measured value is larger than the preset temperature threshold value, the controller inputs the first temperature measured value into the preset temperature control model, so that the first pumping speed is obtained. Next, the controller will send a first control signal to the vacuum pump to control the vacuum pump to draw liquid nitrogen from the liquid nitrogen tank at a first pumping rate and flow through the sample stage to rapidly cool the sample stage by the liquid nitrogen.
Optionally, before the first temperature measurement value is input into a preset temperature control model to obtain a first pumping speed, the preset temperature control model is constructed; the constructing the preset temperature control model specifically comprises the following steps:
acquiring historical data of the sample table, wherein the historical data comprises a historical temperature measured value, a historical pumping speed and a historical heating wire heating temperature;
and inputting the historical data into a preset neural network for training, and constructing the preset temperature control model, wherein the preset temperature control model comprises a corresponding relation between a temperature measured value and heating temperature of a heating wire and a corresponding relation between the temperature measured value and pumping speed.
By adopting the technical scheme, the controller can construct the preset temperature control model before the first temperature measured value is input into the preset temperature control model to obtain the first pumping speed. At this time, the controller will firstly obtain the historical temperature measurement value, the historical pumping speed and the historical heating wire heating temperature of the sample stage, and then input the historical data into the preset neural network for training so as to construct a preset temperature control model. Therefore, the controller is convenient to intelligently control the pumping speed of the vacuum pump and the heating temperature of the heating wire according to the corresponding relation in the preset temperature control model, the setting time of the pumping speed and the heating temperature of the heating wire is shortened, the control efficiency of the controller on the temperature control system is convenient to improve, and therefore the high and low temperature requirements of the semiconductor probe station on the semiconductor test are met.
Optionally, if the first temperature measurement value is greater than or equal to the preset temperature threshold, the vacuum pump is in a working state, and the heating wire is in a closed state; if the first temperature measured value is smaller than the preset temperature threshold value, the vacuum pump is in a closed state, and the heating wire is in a working state; wherein, the liquid crystal display device comprises a liquid crystal display device,
the temperature measurement is proportional to the pumping speed and inversely proportional to the heater heating temperature.
By adopting the technical scheme, when the first temperature measured value is greater than or equal to the preset temperature threshold, the vacuum pump is in a working state, and the heating wire is in a closed state; when the first temperature measured value is smaller than the preset temperature threshold value, the vacuum pump is in a closed state, and the heating wire is in a working state. The higher the temperature of the sample table is, the faster the pumping speed of the vacuum pump is, so that the higher the speed of liquid flowing through the sample table is, the heat exchange efficiency of the sample table and liquid nitrogen is improved, and the sample table is conveniently cooled rapidly. The lower the temperature of the sample platform is, the higher the heating temperature of the heating wire is, so that the temperature difference between the temperature of the sample platform and the heating wire is reduced rapidly, the sample platform is heated rapidly, and the temperature requirement of the semiconductor probe platform on the sample platform test is met.
Optionally, the first infrared temperature measurement value sent by a first infrared temperature measurement sensor is received, and the first infrared temperature measurement sensor is any one of the infrared temperature measurement sensors;
receiving a second infrared temperature measurement value sent by a second infrared temperature measurement sensor, wherein the second infrared temperature measurement sensor is any one infrared temperature measurement sensor except the first infrared temperature measurement sensor in the plurality of infrared temperature measurement sensors;
receiving a second temperature measurement value sent by the contact temperature sensor;
judging whether the first infrared temperature measurement value, the second infrared temperature measurement value and the second temperature measurement value are the same or not;
if the first infrared temperature measurement value is the same as the second infrared temperature measurement value and the second temperature measurement value is different from the second infrared temperature measurement value, determining that the contact type temperature sensor fails;
and sending fault prompt information to user equipment so as to prompt a user corresponding to the user equipment to check whether the contact temperature sensor has faults or not.
By adopting the technical scheme, the controller is convenient for quickly determining whether the contact type temperature sensor fails or not by judging whether the first infrared temperature measurement value sent by the first infrared temperature measurement sensor, the second infrared temperature measurement value sent by the second infrared temperature measurement sensor and the second temperature measurement value sent by the contact type temperature sensor are the same. After the controller determines that the contact temperature sensor fails, fault prompt information is sent to the user equipment, so that a user corresponding to the user equipment can further check whether the contact temperature sensor fails. Therefore, fault prompt of the contact type temperature sensor is realized, normal temperature measurement of the contact type temperature sensor is guaranteed, and smooth completion of control of the temperature of the sample stage is further guaranteed.
Optionally, if the first infrared temperature measurement value, the second infrared temperature measurement value and the second temperature measurement value are the same, determining that the contact temperature sensor is normal.
By adopting the technical scheme, the performance of the contact type temperature sensor is conveniently detected by the controller, so that the normal use of the contact type temperature sensor is ensured.
In a third aspect of the present application, there is provided a temperature control apparatus for use in a semiconductor probe station, for use in a temperature control system as described above, the temperature control apparatus being a controller comprising a receiving module, a processing module and a transmitting module, wherein,
the receiving module is used for receiving a first temperature measured value sent by the contact type temperature sensor, wherein the first temperature measured value is larger than a preset temperature threshold value;
the processing module is used for inputting the first temperature measured value into a preset temperature control model to obtain a first pumping speed, the preset temperature control model comprises a corresponding relation between the temperature measured value and the pumping speed, and the first pumping speed is the speed at which the vacuum pump pumps the liquid nitrogen from the liquid nitrogen tank to flow through the sample table;
The sending module is used for sending a first control signal to the vacuum pump, wherein the first control signal comprises the first pumping speed so as to control the vacuum pump to pump liquid nitrogen in the liquid nitrogen tank into the sample platform according to the first pumping speed, so that the sample platform is cooled.
In a fourth aspect the application provides an electronic device comprising a processor, a memory for storing instructions, a user interface and a network interface for communicating to other devices, the processor being arranged to execute the instructions stored in the memory to cause the electronic device to perform a method as claimed in any one of the preceding claims.
In summary, one or more technical solutions provided in the embodiments of the present application at least have the following technical effects or advantages:
1. in the application, the controller firstly receives a first temperature measured value sent by the contact temperature sensor, and the controller inputs the first temperature measured value into a preset temperature control model so as to obtain a first pumping speed. Next, the controller sends a first control signal to the vacuum pump to control the vacuum pump to pump liquid nitrogen from the liquid nitrogen tank according to a first pumping speed and flow the liquid nitrogen to the sample stage, so that the liquid nitrogen rapidly cools the sample stage;
2. In the application, the controller utilizes the historical temperature measured value, the historical pumping speed and the historical heating wire heating temperature of the sample stage to construct a preset temperature control model. The controller is convenient to intelligently control the pumping speed of the vacuum pump and the heating temperature of the heating wire according to the corresponding relation in the preset temperature control model, shortens the setting time of the pumping speed and the heating temperature of the heating wire, and is convenient to improve the control efficiency of the controller on the temperature control system, so that the high and low temperature requirements of the semiconductor probe station on the semiconductor test are met;
3. according to the application, by arranging the air tank, the liquid nitrogen in the input pipeline and the output pipeline can be emptied by using air, and the pipeline is prevented from being damaged due to backlog of the liquid nitrogen, so that the normal operation of the whole temperature control system is ensured. Secondly, release of liquid nitrogen or air is controlled through linkage of the electromagnetic valve and the vacuum pump, and compared with the traditional technology, the cooling performance of liquid nitrogen and the emptying performance of air can be further guaranteed, and further accurate temperature control is facilitated.
Drawings
Fig. 1 is a schematic structural diagram of a temperature control system applied to a semiconductor probe station according to an embodiment of the present application.
Fig. 2 is a schematic flow chart of a temperature control method applied to a semiconductor probe station according to an embodiment of the present application.
Fig. 3 is a schematic block diagram of a temperature control device applied to a semiconductor probe station according to an embodiment of the present application.
Fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Reference numerals illustrate: 11. a liquid nitrogen tank; 12. a vacuum pump; 13. a sample stage; 14. an input pipeline; 15. a contact temperature sensor; 16. a heating block; 17. a muffler; 18. an output line; 19. an exhaust line; 20. a heating wire; 21. an air tank; 22. a first electromagnetic valve; 23. a second electromagnetic valve; 31. a receiving module; 32. a processing module; 33. a transmitting module; 41. a processor; 42. a communication bus; 43. a user interface; 44. a network interface; 45. a memory.
Detailed Description
In order that those skilled in the art will better understand the technical solutions in the present specification, the technical solutions in the embodiments of the present specification will be clearly and completely described below with reference to the drawings in the embodiments of the present specification, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments.
In describing embodiments of the present application, words such as "for example" or "for example" are used to mean serving as examples, illustrations, or descriptions. Any embodiment or design described herein as "such as" or "for example" in embodiments of the application should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "or" for example "is intended to present related concepts in a concrete fashion.
In the description of embodiments of the application, the term "plurality" means two or more. For example, a plurality of systems means two or more systems, and a plurality of screen terminals means two or more screen terminals. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating an indicated technical feature. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.
In the last 60 th century, as semiconductor technology began to develop rapidly, there was an urgent need for a tool capable of testing and researching semiconductor materials at a microscopic scale, and thus, a semiconductor probe station has been developed. Semiconductor probe stations can be used to test a variety of microelectronic devices, such as memories, processors, and the like. As one of the indispensable tools in the microelectronics field, it is important to ensure the working environment of the semiconductor probe station, in particular for the temperature control of the sample station of the semiconductor probe station.
To avoid the influence of thermal noise on the semiconductor sample test when the sample stage in the semiconductor probe stage is in a high temperature environment. Therefore, the sample stage needs to be cooled. At present, in the related art, cooling water is generally adopted to circularly cool the sample stage. However, the water has a relatively large specific heat capacity, so that the overall cooling speed is relatively low, and the temperature control is unstable.
In order to solve the above technical problems, the present application provides a temperature control system applied to a semiconductor probe station, which includes a liquid nitrogen tank 11, an air tank 21, a semiconductor probe station, a vacuum pump 12, a temperature measuring assembly, and a controller.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a temperature control system applied to a semiconductor probe station according to the present application. The semiconductor probe station comprises a sample station 13, wherein the sample station 13 is used for bearing a semiconductor sample so as to assist in completing test research and development. The liquid nitrogen tank 11 stores liquid nitrogen for cooling the sample table 13, the liquid nitrogen tank 11 is connected with the sample table 13 through the input pipeline 14, so that the liquid nitrogen can flow to the sample table 13 through the input pipeline 14, the output port of the liquid nitrogen tank 11 is provided with the first electromagnetic valve 22, the first electromagnetic valve 22 is used for opening or closing the output of the liquid nitrogen, and the first electromagnetic valve 22 is a one-way valve, so that liquid nitrogen backflow is avoided. When the first electromagnetic valve 22 is opened, liquid nitrogen in the liquid nitrogen tank 11 flows to the sample stage through the input pipeline 14, so that the circulating cooling of the sample stage 13 is completed. The air tank 21 is connected with the sample table 13 through the input pipeline 14, air is stored in the air tank 21, the air is used for evacuating liquid nitrogen in the input pipeline 14, the output port of the air tank 21 is provided with a second electromagnetic valve 23, the second electromagnetic valve 23 is used for opening or closing the output of the air, and the second electromagnetic valve 23 is a one-way valve, so that liquid nitrogen backflow is avoided. The air stored in the air tank 21 is high-pressure air, and when the first electromagnetic valve 22 is closed and the second electromagnetic valve 23 is opened, the air in the air tank 21 empties the liquid nitrogen in the input pipeline 14 and the output pipeline 18. In practical application, the working states of the first electromagnetic valve 22 and the second electromagnetic valve 23 are that the first electromagnetic valve 22 is opened and the second electromagnetic valve 23 is closed; or the first solenoid valve 22 is closed and the second solenoid valve 23 is opened; or both the first solenoid valve 22 and the second solenoid valve 23 are closed.
The vacuum pump 12 is an apparatus for manufacturing and maintaining a vacuum environment, which draws liquid nitrogen in the liquid nitrogen tank 11 into the sample stage 13 based on the movement and pressure difference of gas molecules. In embodiments of the present application, the vacuum pump 12 includes, but is not limited to, a mechanical pump, a diffusion pump, an ion pump, and the like. By cooperative control of the vacuum pump 12 and solenoid valve, more accurate control of the release of liquid nitrogen or air is facilitated. The temperature measuring assembly comprises a contact type temperature sensor 15 and a plurality of infrared temperature sensors, wherein the contact type temperature sensor 15 is arranged inside the sample table 13 and is tightly attached to the sample table 13. The contact temperature sensor 15 is used to measure the temperature of the sample stage 13 in real time. In the present application, the contact temperature sensor 15 includes, but is not limited to, a thermal resistance temperature sensor, a thermocouple temperature sensor, and the like. The plurality of infrared temperature measuring sensors are non-contact temperature sensors 15, that is, the infrared rays are utilized to remotely measure the temperature of the sample table 13, the installation positions of the plurality of infrared temperature measuring sensors are set according to the positions of the sample table 13, and the specific positions are not further limited in the embodiment of the application. The number of the infrared temperature measuring sensors is preferably 2 in the embodiment of the application.
The controller is electrically connected with the contact temperature sensor 15, and is also electrically connected with the plurality of infrared temperature sensors, and the controller is used for receiving temperature data measured by the contact temperature sensor 15 and temperature data measured by the plurality of infrared temperature sensors. The controller is electrically connected with the first electromagnetic valve 22 and the second electromagnetic valve 23, and can control the first electromagnetic valve 22 and the second electromagnetic valve 23 to be opened or closed. Second, the controller is also used to control the vacuum pump 12 to operate or shut down. In the embodiment of the application, the controller is preferably a PLC controller.
Referring to fig. 1, the temperature control system further includes a heating block 16 and a muffler 17. The heating block 16 is connected with the sample table 13 through an output pipeline 18, the heating block 16 is installed around the circumferential side wall of the output pipeline 18, and the heating block 16 is used for heating liquid nitrogen in the output pipeline 18. As the liquid nitrogen flows from the sample stage 13 through the output line 18, the liquid nitrogen is heated at high temperature by the heating block 16 to form nitrogen gas, which is again sucked in by the vacuum pump 12, thereby cycling back and forth. The heating block 16 heats the liquid nitrogen to generate nitrogen gas, so that the vacuum pump 12 can be prevented from sucking in the liquid state liquid nitrogen, and the influence of the damaged performance of the vacuum pump 12 is reduced. The muffler 17 is connected with the vacuum pump 12 through an exhaust pipeline 19, the exhaust pipeline 19 is used for discharging nitrogen formed after liquid nitrogen is heated, and the muffler 17 is used for carrying out noise reduction treatment on the nitrogen. Nitrogen gas is discharged from the vacuum pump 12 through the exhaust line 19, and before being discharged to the atmosphere, the nitrogen gas passes through the muffler 17 at the end of the exhaust line 19, thereby performing noise reduction treatment on the nitrogen gas.
Referring to fig. 1, the temperature control system further includes a heating wire 20, where the heating wire 20 is disposed inside the sample stage 13, and is disposed away from the contact temperature sensor 15 while being tightly attached to the sample stage 13, so as to reduce the influence of the heating wire 20 on the temperature measurement of the contact temperature sensor 15. The heating wire 20 is used for heating the sample stage 13, and the temperature of the heating wire 20 is controlled by a controller. When the temperature of the sample stage 13 is too low, the temperature of the sample stage 13 can be quickly raised. Wherein, the input pipeline 14 and the output pipeline 18 are the same type of pipeline, and both are sleeved with heat insulation cotton for insulating the input pipeline 14 and the output pipeline 18. Because of the extremely low temperature of the liquid nitrogen, there may be problems with freezing of the outer walls of the lines as the liquid nitrogen flows through the inlet line 14 and the outlet line 18. Through the thermal insulation cotton sleeved on the input pipeline 14 and the output pipeline 18, the probability of icing of the outer walls of the input pipeline 14 and the output pipeline 18 is reduced, so that the normal use of the input pipeline 14 and the output pipeline 18 is ensured, and the smooth carrying of semiconductors and semiconductor tests carried by the sample table 13 is further ensured.
The application further provides a temperature control method applied to the semiconductor probe station, and referring to fig. 2, fig. 2 is a flow chart of the temperature control method applied to the semiconductor probe station according to the embodiment of the application. The temperature control method is applied to the controller in the temperature control system, and comprises the following steps of S210 to S230:
S210, receiving a first temperature measured value sent by the contact temperature sensor 15, wherein the first temperature measured value is larger than a preset temperature threshold.
Specifically, the contact temperature sensor 15 measures the temperature of the sample stage 13, generates a first temperature measurement value, and transmits the first temperature measurement value to the controller so that the controller receives the first temperature measurement value. Wherein the first temperature measurement is greater than a preset temperature threshold. The preset temperature threshold is the temperature required by the sample stage 13 to assist the semiconductor probe stage in testing the semiconductor sample. In the embodiment of the application, the preset temperature threshold value can be preset by a test staff. For example, the preset temperature threshold may be-20 ℃. In practical applications, the preset temperature threshold may be a temperature fluctuation range considering the factors of the environmental temperature and the hardware characteristics. For example, the preset temperature threshold may be from-19.9 ℃ to-20.1 ℃.
S220, inputting the first temperature measured value into a preset temperature control model to obtain a first pumping speed, wherein the preset temperature control model comprises a corresponding relation between the temperature measured value and the pumping speed, and the first pumping speed is the speed at which the vacuum pump 12 pumps liquid nitrogen from the liquid nitrogen tank 11 to flow through the sample table 13.
Specifically, after receiving the first temperature measurement value sent by the contact temperature sensor 15, the controller inputs the first temperature measurement value into a preset temperature control model, thereby obtaining a first pumping speed. The first pumping speed is a speed at which the vacuum pump 12 pumps liquid nitrogen from the liquid nitrogen tank 11 through the sample stage 13. Wherein, the preset temperature control model is constructed in advance.
In one possible embodiment, the preset temperature control model is constructed before the first temperature measurement value is input into the preset temperature control model to obtain the first pumping speed; the method for constructing the preset temperature control model specifically comprises the following steps: acquiring historical data of the sample table 13, wherein the historical data comprises a historical temperature measured value, a historical pumping speed and a historical heating wire heating temperature; the historical data are input into a preset neural network for training, and a preset temperature control model is constructed, wherein the preset temperature control model comprises a corresponding relation between a temperature measured value and heating temperature of a heating wire and a corresponding relation between the temperature measured value and pumping speed.
Specifically, the construction of the preset temperature control model first requires obtaining the historical temperature measurement value, the historical pumping speed and the historical heating wire heating temperature of the sample stage 13, and the obtaining modes include, but are not limited to, CRM process introduction, manual input and the like. Next, the controller normalizes the history data of the sample stage 13 so that the history data are unified to the same order of magnitude range. Second, the controller also performs smoothing on the history data to remove noise data and outliers. And finally, inputting the processed historical data array into a CNN model, wherein the CNN model comprises a convolution layer, a pooling layer and a full connection layer. The convolution layer is used for extracting features corresponding to different data in the historical data, the pooling layer is used for reducing data dimension, and the full connection layer is used for classifying or regressing problems. In the embodiment of the application, a CNN model comprising one or more convolution layers and a pooling layer can be constructed, so that the temperature measured value at the next moment can be predicted according to historical data.
Further, after the data preprocessing and the construction of the CNN model are completed, the historical data set needs to be divided into a training set, a verification set and a test set. The training set is used for training the CNN model, the verification set is used for adjusting the super parameters of the model, and the test set is used for evaluating the performance of the model. After the division of the data set is completed, the historical data needs to be input into the CNN model for training. The training process of the CNN model is to adjust the parameters of the model through a back propagation algorithm, so that the model can better fit historical data. In order to avoid the model from being over fitted on the training set, the embodiment of the application can adopt L1, L2 regularization and the like. In order to accelerate the convergence rate of the model, for example, batch gradient descent, random gradient descent, or the like may be employed.
Finally, after the CNN model is trained, the model needs to be evaluated and predicted. In the embodiment of the application, the performance of the CNN model can be evaluated by means of mean square error, average absolute error and the like. Through the steps, the controller can construct a preset temperature control model according to the historical data, and the purpose of controlling the temperature of the sample table 13 is achieved.
And S230, sending a first control signal to the vacuum pump 12, wherein the first control signal comprises a first pumping speed so as to control the vacuum pump 12 to pump the liquid nitrogen in the liquid nitrogen tank 11 into the sample table 13 according to the first pumping speed, so as to cool the sample table 13.
Specifically, the controller, after obtaining the first pumping speed, will also send a first control signal to the vacuum pump 12, where the first control signal includes the first pumping speed. After receiving the first control signal, the vacuum pump 12 will pump out the liquid nitrogen in the liquid nitrogen pipe according to the first pumping speed, so that the liquid nitrogen flows through the sample stage 13 along the input pipeline 14, and the sample stage 13 is cooled.
In one possible embodiment, if the first temperature measurement is greater than or equal to the preset temperature threshold, the vacuum pump 12 is in an operating state and the heating wire 20 is in an off state; if the first temperature measurement value is smaller than the preset temperature threshold value, the vacuum pump 12 is in a closed state, and the heating wire 20 is in a working state; wherein, the temperature measurement value is in direct proportion to the pumping speed, and the temperature measurement value is in inverse proportion to the heating temperature of the heating wire.
Specifically, in the embodiment of the present application, if the preset temperature threshold is 20 ℃ below zero, when the temperature of the sample stage 13 is greater than or equal to 20 ℃ below zero, the controller will control the vacuum pump 12 to work and close the heating wire 20; when the temperature of the sample table 13 is less than minus 20 ℃, the controller controls the heating wire 20 to work and turns off the vacuum pump 12; when the temperature of the sample stage 13 is equal to-20 c, the controller will turn off both the vacuum pump 12 and the heater 20. In practical application, considering that the temperature stability fluctuates by +/-0.1 ℃, if the preset temperature threshold is in the range from 19.9 ℃ below zero to 20.1 ℃ below zero, when the temperature of the sample stage 13 is greater than 20.1 ℃ below zero, the controller controls the vacuum pump 12 to work and closes the heating wire 20; when the temperature of the sample table 13 is less than 19.9 ℃ below zero, the controller controls the heating wire 20 to work and turns off the vacuum pump 12; when the temperature of the sample stage 13 is between-19.9 ℃ and-20.1 ℃, the controller will turn off both the vacuum pump 12 and the heater 20.
In the embodiment of the application, when the sample stage is required to be cooled, as the output port of the liquid nitrogen tank 11 is provided with the first electromagnetic valve 22 and the output port of the air tank 21 is provided with the second electromagnetic valve 23, the controller controls the opening of the first electromagnetic valve 22 and the closing of the second electromagnetic valve 23 so as to enable the liquid nitrogen tank 11 to be opened for conveying liquid nitrogen. When the liquid nitrogen in the input pipeline 14 and the output pipeline 18 needs to be emptied, the controller controls the first electromagnetic valve 22 to be closed and the second electromagnetic valve 23 to be opened, so that the air in the air tank 21 flows through the input pipeline 14 and the output pipeline 18, and the effect of emptying the liquid nitrogen is achieved.
Specifically, when the temperature measurement value is greater than or equal to the preset temperature threshold value, the higher the temperature measurement value, the faster the pumping speed, the faster the heat exchange speed between the sample stage 13 and the liquid nitrogen, so that the temperature of the sample stage 13 drops faster. When the temperature measured value is smaller than the preset temperature measured threshold, the smaller the temperature value measurement is, the higher the heating temperature of the heating wire is, so that the temperature of the sample table 13 is quickly increased to the preset temperature threshold. In the preset temperature control model, the temperature measured value and the pumping speed are in one-to-one correspondence, and the temperature measured value and the heating temperature of the heating wire are also in one-to-one correspondence. Therefore, the controller can accurately and dynamically adjust the temperature of the sample table 13, and is convenient for improving the control efficiency of the controller on the temperature control system, thereby meeting the high and low temperature requirements of the semiconductor probe table for testing the semiconductor sample.
In one possible implementation, a first infrared temperature measurement value sent by a first infrared temperature measurement sensor is received, wherein the first infrared temperature measurement sensor is any one of a plurality of infrared temperature measurement sensors; receiving a second infrared temperature measurement value sent by a second infrared temperature measurement sensor, wherein the second infrared temperature measurement sensor is any one infrared temperature measurement sensor except the first infrared temperature measurement sensor in the plurality of infrared temperature measurement sensors; receiving a second temperature measurement sent by the contact temperature sensor 15; judging whether the first infrared temperature measurement value, the second infrared temperature measurement value and the second temperature measurement value are the same; if the first infrared temperature measurement value is the same as the second infrared temperature measurement value and the second temperature measurement value is different from the second infrared temperature measurement value, determining that the contact type temperature sensor 15 fails; and sending fault prompt information to the user equipment to prompt a user corresponding to the user equipment to check whether the contact temperature sensor 15 has faults or not.
Specifically, since the contact temperature sensor 15 is located inside the sample stage 13 and the temperature of the sample stage 13 is high or low, the measurement environment of the contact temperature sensor 15 is very bad, and thus frequent measurement of the contact temperature sensor 15 is prone to malfunction. In order to ensure that the contact temperature sensor 15 can accurately measure the temperature of the sample table 13 and enable the controller to timely acquire the fault condition of the contact temperature sensor 15, the embodiment of the application is provided with 2 infrared temperature sensors, namely a first infrared temperature sensor and a second infrared temperature sensor. Whether the contact type temperature sensor 15 fails or not is judged by comparing whether the temperatures of the sample table 13 measured by the first infrared temperature sensor, the second infrared temperature sensor and the contact type temperature sensor 15 are the same or not.
Further, when the first infrared temperature measurement value and the second infrared temperature measurement value are the same, but the second temperature measurement value and the second infrared temperature measurement value are different, the controller determines that the contact temperature sensor 15 fails. At this time, the controller will send fault prompt information to the user equipment to prompt the user corresponding to the user equipment to check whether the contact temperature sensor 15 has a fault or not, so as to achieve the purpose of monitoring the contact temperature sensor in real time. Types of user equipment include, but are not limited to: android (Android) system equipment, mobile operating system (iOS) equipment developed by apple corporation, personal Computers (PCs), global area network (Web) equipment, virtual Reality (VR) equipment, augmented Reality (Augmented Reality, AR) equipment and the like. In the embodiment of the application, the user equipment is a computer, and the user corresponding to the user equipment is a test staff.
In one possible embodiment, if the first infrared temperature measurement value, the second infrared temperature measurement value, and the second temperature measurement value are all the same, it is determined that the contact temperature sensor 15 is normal.
Specifically, when the first infrared measurement value, the second infrared measurement value, and the second temperature measurement value are all the same, the controller determines that the contact temperature sensor 15 is normal. At this time, the prompt information can also be sent to the user equipment, so that the user corresponding to the user equipment is prompted to perform normal test work. Wherein, for the comparison of the first infrared measurement value, the second infrared measurement value and the second temperature measurement value, 6 comparison results will appear. However, in practical application, the performance of the first infrared temperature sensor and/or the second infrared temperature sensor is better, the probability of failure of the first infrared temperature sensor and/or the second infrared temperature sensor is far lower than that of failure of the contact temperature sensor 15, and in order to realize the purpose of performing failure detection on the contact temperature sensor 15 by adopting 2 infrared temperature sensors to the greatest extent, only two cases are listed, and other cases are not repeated.
The application further provides a temperature control device applied to the semiconductor probe station, and referring to fig. 3, fig. 3 is a schematic block diagram of the temperature control device applied to the semiconductor probe station according to the embodiment of the application. The temperature control device is applied to the above temperature control system, and the temperature control device is a controller, wherein the controller comprises a receiving module 31, a processing module 32 and a sending module 33, and the receiving module 31 is used for receiving a first temperature measured value sent by the contact temperature sensor 15, and the first temperature measured value is greater than a preset temperature threshold; the processing module 32 is configured to input the first temperature measurement value into a preset temperature control model, to obtain a first pumping speed, where the preset temperature control model includes a correspondence between the temperature measurement value and the pumping speed, and the first pumping speed is a speed at which the vacuum pump 12 pumps liquid nitrogen from the liquid nitrogen tank 11 to flow through the sample stage 13; the sending module 33 is configured to send a first control signal to the vacuum pump 12, where the first control signal includes a first pumping speed, so as to control the vacuum pump 12 to pump the liquid nitrogen in the liquid nitrogen tank 11 into the sample stage 13 according to the first pumping speed, so as to cool the sample stage 13.
In one possible embodiment, the preset temperature control model is constructed before the first temperature measurement value is input into the preset temperature control model to obtain the first pumping speed; the method for constructing the preset temperature control model specifically comprises the following steps: acquiring historical data of the sample table 13, wherein the historical data comprises a historical temperature measured value, a historical pumping speed and a historical heating wire heating temperature; the historical data are input into a preset neural network for training, and a preset temperature control model is constructed, wherein the preset temperature control model comprises a corresponding relation between a temperature measured value and heating temperature of a heating wire and a corresponding relation between the temperature measured value and pumping speed.
In one possible embodiment, if the first temperature measurement is greater than or equal to the preset temperature threshold, the vacuum pump 12 is in an operating state and the heating wire 20 is in an off state; if the first temperature measurement value is smaller than the preset temperature threshold value, the vacuum pump 12 is in a closed state, and the heating wire 20 is in a working state; wherein, the temperature measurement value is in direct proportion to the pumping speed, and the temperature measurement value is in inverse proportion to the heating temperature of the heating wire.
In one possible implementation, a first infrared temperature measurement value sent by a first infrared temperature measurement sensor is received, wherein the first infrared temperature measurement sensor is any one of a plurality of infrared temperature measurement sensors; receiving a second infrared temperature measurement value sent by a second infrared temperature measurement sensor, wherein the second infrared temperature measurement sensor is any one infrared temperature measurement sensor except the first infrared temperature measurement sensor in the plurality of infrared temperature measurement sensors; receiving a second temperature measurement sent by the contact temperature sensor 15; judging whether the first infrared temperature measurement value, the second infrared temperature measurement value and the second temperature measurement value are the same; if the first infrared temperature measurement value is the same as the second infrared temperature measurement value and the second temperature measurement value is different from the second infrared temperature measurement value, determining that the contact type temperature sensor 15 fails; and sending fault prompt information to the user equipment to prompt a user corresponding to the user equipment to check whether the contact temperature sensor 15 has faults or not.
In one possible embodiment, if the first infrared temperature measurement value, the second infrared temperature measurement value, and the second temperature measurement value are all the same, it is determined that the contact temperature sensor 15 is normal.
The application further provides an electronic device, and referring to fig. 4, fig. 4 is a schematic structural diagram of the electronic device according to the embodiment of the application. The electronic device may include: at least one processor 41, at least one network interface 44, a user interface 43, a memory 45, at least one communication bus 42.
Wherein a communication bus 42 is used to enable connected communication between these components.
The user interface 43 may include a Display screen (Display) and a Camera (Camera), and the optional user interface 43 may further include a standard wired interface and a standard wireless interface.
The network interface 44 may optionally include a standard wired interface, a wireless interface (e.g., WI-FI interface), among others.
Wherein processor 41 may comprise one or more processing cores. The processor 41 connects various parts within the overall server using various interfaces and lines, performs various functions of the server and processes data by executing or executing instructions, programs, code sets, or instruction sets stored in the memory 45, and invoking data stored in the memory 45. Alternatively, the processor 41 may be implemented in at least one hardware form of digital signal processing (Digital Signal Processing, DSP), field programmable gate array (Field-Programmable Gate Array, FPGA), programmable logic array (Programmable Logic Array, PLA). The processor 41 may integrate one or a combination of several of a central processing unit (Central Processing Unit, CPU), an image processor (Graphics Processing Unit, GPU), and a modem, etc. The CPU mainly processes an operating system, a user interface, an application program and the like; the GPU is used for rendering and drawing the content required to be displayed by the display screen; the modem is used to handle wireless communications. It will be appreciated that the modem may not be integrated into the processor 41 and may be implemented by a single chip.
The Memory 45 may include a random access Memory (Random Access Memory, RAM) or a Read-Only Memory (Read-Only Memory). Optionally, the memory 45 includes a non-transitory computer readable medium (non-transitory computer-readable storage medium). Memory 45 may be used to store instructions, programs, code, a set of codes, or a set of instructions. The memory 45 may include a stored program area and a stored data area, wherein the stored program area may store instructions for implementing an operating system, instructions for at least one function (such as a touch function, a sound playing function, an image playing function, etc.), instructions for implementing the above-described respective method embodiments, etc.; the storage data area may store data or the like involved in the above respective method embodiments. The memory 45 may also optionally be at least one memory device located remotely from the aforementioned processor 41. As shown in fig. 4, an operating system, a network communication module, a user interface module, and an application program of a temperature control method applied to the semiconductor probe station may be included in the memory 45 as a computer storage medium.
In the electronic device shown in fig. 4, the user interface 43 is mainly used for providing an input interface for a user, and acquiring data input by the user; and processor 41 may be configured to invoke memory 45 to store an application program for a temperature control method for a semiconductor probe station, which when executed by one or more processors, causes the electronic device to perform the method as in one or more of the embodiments described above.
It should be noted that, for simplicity of description, the foregoing method embodiments are all described as a series of acts, but it should be understood by those skilled in the art that the present application is not limited by the order of acts described, as some steps may be performed in other orders or concurrently in accordance with the present application. Further, those skilled in the art will also appreciate that the embodiments described in the specification are all of the preferred embodiments, and that the acts and modules referred to are not necessarily required for the present application.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
In the several embodiments provided by the present application, it should be understood that the disclosed apparatus may be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative, such as a division of units, merely a division of logic functions, and there may be additional divisions in actual implementation, such as multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some service interface, device or unit indirect coupling or communication connection, electrical or otherwise.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed over a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable memory. Based on this understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art or in whole or in part in the form of a software product stored in a memory, comprising several instructions for causing a computer device (which may be a personal computer, a server or a network device, etc.) to perform all or part of the steps of the method of the various embodiments of the present application. And the aforementioned memory includes: various media capable of storing program codes, such as a U disk, a mobile hard disk, a magnetic disk or an optical disk.
The foregoing is merely exemplary embodiments of the present disclosure and is not intended to limit the scope of the present disclosure. That is, equivalent changes and modifications are contemplated by the teachings of this disclosure, which fall within the scope of the present disclosure. Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a scope and spirit of the disclosure being indicated by the claims.
Claims (10)
1. A temperature control system applied to a semiconductor probe station is characterized by comprising a liquid nitrogen tank (11), an air tank (21), the semiconductor probe station, a vacuum pump (12), a temperature measuring component and a controller, wherein,
the semiconductor probe station comprises a sample station (13), wherein the sample station (13) is used for bearing a semiconductor sample;
the liquid nitrogen tank (11) is connected with the sample table (13) through an input pipeline (14), liquid nitrogen is stored in the liquid nitrogen tank (11) and used for cooling the sample table (13), a first electromagnetic valve (22) is arranged at an output port of the liquid nitrogen tank (11), and the first electromagnetic valve (22) is used for opening or closing the output of the liquid nitrogen;
The air tank (21) is connected with the sample table (13) through the input pipeline (14), air is stored in the air tank (21), the air is used for evacuating liquid nitrogen in the input pipeline (14), a second electromagnetic valve (23) is arranged at an output port of the air tank (21), and the second electromagnetic valve (23) is used for opening or closing the output of the air;
the vacuum pump (12) is connected with the sample stage (13) through an output pipeline (18), and the vacuum pump (12) is used for pumping the liquid nitrogen into the sample stage (13);
the temperature measuring assembly comprises a contact temperature sensor (15) and a plurality of infrared temperature measuring sensors, the contact temperature sensor (15) is positioned inside the sample table (13), the contact temperature sensor (15) is used for measuring the temperature of the sample table (13), the infrared temperature measuring sensors are positioned outside the sample table (13), and the infrared temperature measuring sensors are used for measuring the temperature of the sample table (13) by infrared rays;
the controller is electrically connected with the contact type temperature sensor (15), the first electromagnetic valve (22) and the second electromagnetic valve (23), and the controller is electrically connected with a plurality of infrared temperature measuring sensors.
2. The temperature control system of claim 1, further comprising a heating block (16), the heating block (16) being sleeved on the output pipeline (18), the heating block (16) being configured to heat liquid nitrogen in the output pipeline (18) to produce nitrogen.
3. The temperature control system according to claim 1, further comprising a muffler (17), wherein the muffler (17) is connected to the vacuum pump (12) through an exhaust pipe (19), the exhaust pipe (19) is configured to discharge nitrogen gas formed by heating the liquid nitrogen, and the muffler (17) is configured to perform noise reduction treatment on the nitrogen gas.
4. The temperature control system according to claim 1, further comprising a heating wire (20), the heating wire (20) being arranged in the sample stage (13), the heating wire (20) being used for heating the sample stage (13).
5. The temperature control system according to claim 1, characterized in that the inlet line (14) and the outlet line (18) are both sheathed with insulation wool for insulating the inlet line (14) and the outlet line (18).
6. A temperature control method applied to a semiconductor probe station, wherein the temperature control method is applied to a controller in a temperature control system according to claim 4, the method comprising:
receiving a first temperature measurement value sent by the contact temperature sensor (15), wherein the first temperature measurement value is larger than a preset temperature threshold value;
inputting the first temperature measured value into a preset temperature control model to obtain a first pumping speed, wherein the preset temperature control model comprises a corresponding relation between the temperature measured value and the pumping speed, and the first pumping speed is the speed at which the vacuum pump (12) pumps the liquid nitrogen from the liquid nitrogen tank (11) to flow through the sample table (13);
and sending a first control signal to the vacuum pump (12), wherein the first control signal comprises the first pumping speed so as to control the vacuum pump (12) to pump liquid nitrogen in the liquid nitrogen tank (11) into the sample table (13) according to the first pumping speed, so as to cool the sample table (13).
7. The method according to claim 6, wherein the preset temperature control model is constructed before the first temperature measurement value is input into the preset temperature control model to obtain a first pumping speed; the constructing the preset temperature control model specifically comprises the following steps:
Acquiring historical data of the sample table (13), wherein the historical data comprises a historical temperature measured value, a historical pumping speed and a historical heating wire heating temperature;
and inputting the historical data into a preset neural network for training, and constructing the preset temperature control model, wherein the preset temperature control model comprises a corresponding relation between a temperature measured value and heating temperature of a heating wire and a corresponding relation between the temperature measured value and pumping speed.
8. The temperature control method according to claim 7, wherein if the first temperature measurement value is greater than or equal to the preset temperature threshold value, the vacuum pump (12) is in an operating state, and the heating wire (20) is in an off state; if the first temperature measured value is smaller than the preset temperature threshold value, the vacuum pump (12) is in a closed state, and the heating wire (20) is in a working state; wherein, the liquid crystal display device comprises a liquid crystal display device,
the temperature measurement is proportional to the pumping speed and inversely proportional to the heater heating temperature.
9. The temperature control method of claim 6, further comprising:
receiving a first infrared temperature measurement value sent by a first infrared temperature measurement sensor, wherein the first infrared temperature measurement sensor is any one of a plurality of infrared temperature measurement sensors;
Receiving a second infrared temperature measurement value sent by a second infrared temperature measurement sensor, wherein the second infrared temperature measurement sensor is any one infrared temperature measurement sensor except the first infrared temperature measurement sensor in the plurality of infrared temperature measurement sensors;
receiving a second temperature measurement sent by the contact temperature sensor (15);
judging whether the first infrared temperature measurement value, the second infrared temperature measurement value and the second temperature measurement value are the same or not;
if the first infrared temperature measurement value is the same as the second infrared temperature measurement value and the second temperature measurement value is different from the second infrared temperature measurement value, determining that the contact type temperature sensor (15) fails;
and sending fault prompt information to user equipment so as to prompt a user corresponding to the user equipment to check whether the contact temperature sensor (15) has faults or not.
10. The temperature control method according to claim 9, characterized in that the method further comprises:
and if the first infrared temperature measurement value, the second infrared temperature measurement value and the second temperature measurement value are the same, determining that the contact type temperature sensor (15) is normal.
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| CN117472126A (en) * | 2023-12-27 | 2024-01-30 | 深圳市森美协尔科技有限公司 | Chuck cleaning method and related device |
| CN117472126B (en) * | 2023-12-27 | 2024-03-19 | 深圳市森美协尔科技有限公司 | Chuck cleaning method and related device |
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