CN116657108B - Magnetron sputtering cooling intracavity reaction control display system - Google Patents
Magnetron sputtering cooling intracavity reaction control display system Download PDFInfo
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- 238000001816 cooling Methods 0.000 title claims abstract description 135
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 29
- 238000004458 analytical method Methods 0.000 claims abstract description 84
- 230000002159 abnormal effect Effects 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 37
- 230000008569 process Effects 0.000 claims abstract description 37
- 238000013500 data storage Methods 0.000 claims abstract description 29
- 230000007246 mechanism Effects 0.000 claims abstract description 19
- 238000012544 monitoring process Methods 0.000 claims abstract description 19
- 230000001276 controlling effect Effects 0.000 claims abstract description 11
- 238000007664 blowing Methods 0.000 claims abstract description 9
- 230000001105 regulatory effect Effects 0.000 claims abstract description 6
- 238000012423 maintenance Methods 0.000 claims description 47
- 238000007689 inspection Methods 0.000 claims description 16
- 230000009467 reduction Effects 0.000 claims description 14
- 238000004364 calculation method Methods 0.000 claims description 13
- 230000005856 abnormality Effects 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 8
- 238000010223 real-time analysis Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 3
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- 230000017525 heat dissipation Effects 0.000 description 2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
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- G—PHYSICS
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- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/30—Automatic controllers with an auxiliary heating device affecting the sensing element, e.g. for anticipating change of temperature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention belongs to the technical field of wafer processing, in particular to a reaction control display system in a magnetron sputtering cooling cavity, which is used for analyzing a wafer through a wafer monitoring analysis module to judge whether the position of the wafer is abnormal or not and judging whether the state of the wafer is qualified or not when the position of the wafer is not abnormal in the process of cooling the wafer, sending out early warning to remind corresponding operators when generating a wafer dislocation signal or a wafer state abnormal signal, and automatically regulating and controlling the blowing speed of a cooling mechanism; whether a cooling signal is generated or not is judged through analysis, a processor is used for controlling a cooling mechanism to cool down and cool a wafer when the cooling signal is generated, and staff can call information in the data storage unit through operating the early warning display module, so that follow-up research and improvement are facilitated on the structure of the cooling structure and a control system thereof.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a reaction control display system in a magnetron sputtering cooling cavity.
Background
The magnetron sputtering reaction device is an analytical instrument used in the fields of chemistry, material science, metallurgical engineering technology and physics, when thick film deposition is carried out in a semiconductor chamber, high-power plasma is required to be generated, a target is continuously bombarded under the constraint action of a magnetron, and high-energy particles and metal atoms sputtered from the target are deposited on the surface of a wafer, so that the surface processing treatment of the wafer is realized;
however, a large amount of heat is generated on the wafer in the processing process, if the heat is not timely taken away, the temperature of the wafer and the process kit can be rapidly increased, so that the actual temperature of the wafer is higher than the set process temperature, and the machine station overtemperature alarm is caused, therefore, the surface of the wafer is subjected to air cooling heat dissipation through a cooling structure, but the wafer and a film thereof are easily deviated due to the wind force in the heat dissipation process of the air cooling structure, so that temperature control monitoring analysis and wafer monitoring analysis cannot be realized, early warning and automatic regulation can not be carried out, and powerful data reference can not be provided for subsequent equipment process improvement;
in view of the above technical drawbacks, a solution is now proposed.
Disclosure of Invention
The invention aims to provide a reaction control display system in a magnetron sputtering cooling cavity, which solves the problems that the temperature of a cavity and the temperature of a wafer are difficult to reasonably control, a film is easy to deviate from a specification, temperature control monitoring analysis and wafer monitoring analysis can not be realized, early warning and automatic regulation can not be performed when the temperature of the wafer and the inside of equipment is reduced, and the intelligent degree is low in the prior art.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the reaction control display system in the magnetron sputtering cooling cavity comprises a processor, a data storage module, a wafer monitoring analysis module, an intelligent temperature control analysis module and an operation early warning display module, wherein the wafer monitoring analysis module is used for analyzing a wafer when cooling and lowering the temperature, judging whether the position of the wafer is abnormal, generating a wafer dislocation signal when judging that the position of the wafer is abnormal, judging whether the state of the wafer is qualified if the position of the wafer is not abnormal, generating a wafer state abnormality signal when judging that the state of the wafer is unqualified, sending the wafer dislocation signal or the wafer state abnormality signal to the operation early warning display module through the processor, displaying and sending early warning through the operation early warning display module, and sending a corresponding control instruction by the processor to regulate and control the blowing speed of a cooling mechanism;
the intelligent temperature control analysis module is used for judging whether a cooling signal is generated or not through analysis, the processor is used for controlling the cooling mechanism to cool the wafer when the cooling signal is generated, and the reaction delay signal or the reaction normal signal and the cooling normal signal or the cooling abnormal signal are generated through analysis in the cooling process, the reaction delay signal or the reaction normal signal and the cooling normal signal or the cooling abnormal signal are sent to the operation early warning display module through the processor, the operation early warning display module sends corresponding early warning when receiving the reaction delay signal or the cooling abnormal signal, the processor is used for regulating and controlling the blowing speed of the cooling mechanism when receiving the cooling abnormal signal and reducing the input temperature of an input cooling medium, and the data storage unit is used for storing all information of the processes through time sequence so that staff can conveniently call information in the data storage unit through the operation early warning display module.
Further, the specific operation process of the wafer monitoring and analyzing module includes:
acquiring the position of the wafer before cooling, marking the position image as an initial standard image, acquiring the position of the wafer in real time in the cooling process, marking the real-time position image as a real-time analysis image, performing coincidence degree analysis on the real-time analysis image and the initial standard image to obtain an image coincidence value, calling a preset image coincidence threshold value through a data storage module, performing numerical comparison on the image coincidence value and the preset image coincidence threshold value, and generating a wafer dislocation signal if the image coincidence value does not exceed the preset image coincidence threshold value;
if the image superposition value exceeds the preset image superposition threshold value, acquiring the vibration frequency, the vibration amplitude and the double-sided air pressure difference value of the wafer at the detection moment, carrying out numerical calculation on the vibration frequency, the vibration amplitude and the double-sided air pressure difference value, marking the numerical value as a wafer state value, calling the preset wafer state threshold value through a data storage module, carrying out numerical comparison on the wafer state value and the preset wafer state threshold value, and if the wafer state value exceeds the preset wafer state threshold value, generating a wafer state abnormal signal.
Further, the specific analysis process of the intelligent temperature control analysis module comprises the following steps:
setting a plurality of temperature acquisition points on the surface of a wafer, acquiring real-time temperatures of the corresponding temperature acquisition points, summing all the real-time temperatures, taking an average value to obtain a temperature analysis value, performing numerical comparison on the real-time temperatures of the temperature acquisition points and a preset real-time temperature threshold value, marking the real-time temperatures exceeding the preset real-time temperature threshold value as an overtemperature value, performing numerical calculation on the number of the overtemperature values and the temperature analysis value to obtain Wen Kuangzhi, performing numerical comparison on Wen Kuangzhi and a preset Wen Kuang threshold value, generating a cooling signal if Wen Kuangzhi exceeds the preset Wen Kuang threshold value, and otherwise, not generating the cooling signal; when a cooling signal is generated, the related cooling component is controlled to cool down, and temperature control reaction analysis is performed in the cooling process.
Further, the specific analysis process of the temperature control reaction analysis is as follows;
when a cooling signal is generated, acquiring the generation time of the cooling signal and the time when a related cooling component starts to perform cooling operation, calculating the time difference between the time when the cooling operation starts and the generation time of the cooling signal to obtain a temperature control time difference, and calling a preset temperature control time difference threshold through a data storage module, wherein if the temperature control time difference exceeds the preset temperature control time difference threshold, a reaction delay signal is generated, otherwise, a reaction normal signal is generated;
and in the cooling process, acquiring an initial surface temperature value and a final surface temperature value of the wafer in the detection period, carrying out difference calculation on the initial surface temperature value and the final surface temperature value to obtain a temperature reduction value, calling a preset temperature reduction threshold value through a data storage module, carrying out numerical comparison on the temperature reduction value and the preset temperature reduction threshold value, generating a normal cooling signal if the temperature reduction value exceeds the preset temperature reduction threshold value, and otherwise, generating an abnormal cooling signal.
Further, the processor is in communication connection with the equipment supervision decision module, and the equipment supervision decision module is used for carrying out equipment supervision analysis on the magnetron sputtering reaction device, judging whether to generate equipment overhaul signals through analysis, sending the equipment overhaul signals to the supervision terminal, and carrying out comprehensive maintenance and inspection on the magnetron sputtering reaction device in time when a supervision person of the supervision terminal receives the equipment overhaul signals.
Further, the specific analysis process of the device supervision analysis is as follows:
acquiring the last maintenance inspection date of the magnetron sputtering reaction device, carrying out time difference calculation on the current date and the last maintenance inspection date to obtain a maintenance value, calling a preset maintenance threshold value through a data storage module, carrying out numerical comparison on the maintenance value and the preset maintenance threshold value, generating an equipment maintenance signal if the maintenance value exceeds the preset maintenance threshold value, otherwise, acquiring the actual working time length of the magnetron sputtering reaction device in the time interval between the last maintenance inspection date and the current date and marking the actual working time length as a time analysis value, carrying out numerical calculation on the time analysis value and the maintenance value and taking the numerical value of the time analysis value, marking the numerical value as a set value, calling the preset analysis threshold value through a data storage module, carrying out numerical comparison on the set value and the preset analysis threshold value, and generating the equipment maintenance signal if the set value exceeds the preset analysis threshold value, otherwise, not generating the equipment maintenance signal.
Compared with the prior art, the invention has the beneficial effects that:
1. in the invention, during the process of cooling the wafer, the wafer is analyzed by the wafer monitoring analysis module to judge whether the position of the wafer is abnormal, and whether the state of the wafer is qualified is judged if the position of the wafer is not abnormal, and when a wafer dislocation signal or a wafer state abnormality signal is generated, an early warning is sent to remind a corresponding operator, and the blowing speed of the cooling mechanism is automatically regulated and controlled; the intelligent temperature control analysis module is used for judging whether a cooling signal is generated or not through analysis, controlling the cooling mechanism to cool the wafer through the processor when the cooling signal is generated, and realizing timely cooling of the wafer and internal components and effective monitoring and intelligent regulation of the cooling process through analysis in the cooling process to generate a reaction delay signal or a reaction normal signal and a cooling normal signal or a cooling abnormal signal, and enabling workers to call information in the data storage unit through the operation early warning display module so as to facilitate subsequent research and improvement on the structure of the cooling structure and a control system thereof;
2. according to the invention, the magnetron sputtering reaction device is subjected to equipment supervision analysis through the equipment supervision decision module, whether an equipment overhaul signal is generated or not is judged through analysis, the equipment overhaul signal is sent to the supervision terminal and the operation display early warning module when the equipment overhaul signal is generated, and the supervision personnel of the supervision terminal timely carry out comprehensive maintenance and inspection on the magnetron sputtering reaction device when receiving the equipment overhaul signal, so that the comprehensive maintenance and inspection on equipment can be timely carried out, the safe and stable operation of the magnetron sputtering reaction device can be ensured, and the service life of the equipment can be prolonged.
Drawings
For the convenience of those skilled in the art, the present invention will be further described with reference to the accompanying drawings;
FIG. 1 is a system block diagram of a second embodiment of the present invention;
FIG. 2 is a system block diagram of a third embodiment of the present invention;
fig. 3 is a communication block diagram of a processor and a supervisory terminal according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Embodiment one:
as shown in fig. 1, the invention provides a reaction control display system in a magnetron sputtering cooling cavity, which comprises a processor, a data storage module, a wafer monitoring analysis module, an intelligent temperature control analysis module and an operation early warning display module, wherein the wafer monitoring analysis module is used for analyzing a wafer when cooling and lowering the temperature, judging whether the position of the wafer is abnormal, generating a wafer dislocation signal when judging that the position of the wafer is abnormal, judging whether the state of the wafer is qualified if the position of the wafer is not abnormal, generating a wafer state abnormality signal when judging that the state of the wafer is not qualified, sending the wafer dislocation signal or the wafer state abnormality signal to the operation early warning display module through the processor, displaying and early warning the operation early warning display module so as to remind corresponding operators, the operators can perform corresponding manual regulation in time to ensure the safety and stability of equipment operation and reduce the damage to the wafer, and the processor sends a corresponding control instruction to regulate and control the blowing speed of a cooling mechanism; the specific operation analysis process of the wafer monitoring analysis module is as follows:
acquiring the position of the wafer before cooling, marking the position image as an initial standard image, acquiring the position of the wafer in real time in the cooling process, marking the real-time position image as a real-time analysis image, performing coincidence degree analysis on the real-time analysis image and the initial standard image to obtain an image coincidence value, calling a preset image coincidence threshold value through a data storage module, performing numerical comparison on the image coincidence value and the preset image coincidence threshold value, and generating a wafer dislocation signal if the image coincidence value does not exceed the preset image coincidence threshold value, wherein the position of the current wafer is seriously deviated;
if the image superposition value exceeds a preset image superposition threshold value, which indicates that the current position of the wafer does not deviate seriously, acquiring vibration frequencies HP1, HP2 and HP3, vibration amplitude and double-sided air pressure difference values of the wafer at the detection moment, wherein the double-sided air pressure difference values are data values representing the difference values of the air pressure values born by the upper layer and the air pressure values born by the lower layer of the wafer, and the smaller the value of the double-sided air pressure difference values is, the more balanced the pressure on the upper surface and the lower surface of the wafer is, so that the stability of the wafer is facilitated;
calculating the vibration frequency HP1, the vibration amplitude HP2 and the double-sided air pressure difference HP3 according to the formula YT= (fq1+HP1+fq2 HP2+fq3)/(fq1+fq2+fq3), and marking the values as a wafer state value YT, wherein fq1, fq2 and fq3 are preset proportionality coefficients, and fq3 > fq2 > fq1 > 0; and, the larger the value of the wafer state value YT, the worse the current wafer state is indicated; and calling a preset wafer state threshold value through the data storage module, comparing the wafer state value with the preset wafer state threshold value in a numerical mode, and generating a wafer state abnormal signal if the wafer state value exceeds the preset wafer state threshold value.
The intelligent temperature control analysis module is used for judging whether a cooling signal is generated or not through analysis, controlling the cooling mechanism to cool the wafer through the processor when the cooling signal is generated, analyzing the cooling mechanism to generate a reaction delay signal or a reaction normal signal and a cooling normal signal or a cooling abnormal signal in the cooling process, sending the reaction delay signal or the reaction normal signal and the cooling normal signal or the cooling abnormal signal to the operation early warning display module through the processor, sending corresponding early warning when the operation early warning display module receives the reaction delay signal or the cooling abnormal signal, regulating and controlling the blowing speed of the cooling mechanism when the processor receives the cooling abnormal signal, reducing the input temperature of an input cooling medium, realizing the timely cooling of the wafer and internal components, and realizing the effective monitoring and intelligent regulation of the cooling process; the specific analysis process of the intelligent temperature control analysis module is as follows:
setting a plurality of temperature acquisition points on the surface of a wafer, acquiring real-time temperatures of the corresponding temperature acquisition points, carrying out summation calculation on all the real-time temperatures and taking an average value to obtain a temperature analysis value WP, invoking a preset real-time temperature threshold value through a data storage module, carrying out numerical comparison on the real-time temperature of the temperature acquisition points and the preset real-time temperature threshold value, marking the real-time temperature exceeding the preset real-time temperature threshold value as an overtemperature value, marking the number of the overtemperature values as CS, and carrying out numerical calculation on the number CS of the overtemperature values and the temperature analysis value WP through a formula WK=tk1+tk2 to obtain Wen Kuangzhi WK, wherein tk1 and tk2 are preset weight coefficients, tk1 is larger than tk2, and the larger the numerical value of Wen Kuangzhi WK indicates that the wafer needs to be cooled in time; a preset Wen Kuang threshold value is called through the data storage module, wen Kuangzhi is compared with a preset Wen Kuang threshold value in a numerical mode, if Wen Kuangzhi exceeds the preset Wen Kuang threshold value, a cooling signal is generated, and otherwise, the cooling signal is not generated;
when a cooling signal is generated, the cooling mechanism is operated to cool the wafer and the related components in the semiconductor chamber 1, and temperature control reaction analysis of the cooling process is performed; the temperature control reaction analysis process specifically comprises the following steps: when a cooling signal is generated, acquiring the generation time of the cooling signal and the time when a cooling mechanism starts to perform cooling operation, performing time difference calculation on the time when the cooling mechanism starts to perform cooling operation and the generation time of the cooling signal to obtain a temperature control time difference, calling a preset temperature control time difference threshold value through a data storage module, performing numerical comparison on the temperature control time difference and the preset temperature control time difference threshold value, generating a reaction delay signal if the temperature control time difference exceeds the preset temperature control time difference threshold value, and generating a reaction normal signal if the temperature control time difference does not exceed the preset temperature control time difference threshold value;
in the cooling process, acquiring an initial surface temperature value and a final surface temperature value of the wafer in the detection period, and calculating the difference value between the initial surface temperature value and the final surface temperature value to obtain a temperature reduction value, wherein the larger the value of the temperature reduction value is, the better the cooling condition of the wafer in the detection period is, and otherwise, the worse the cooling effect of the wafer in the detection period is; the data storage module is used for calling a preset temperature drop threshold value, comparing the temperature drop value with the preset temperature drop threshold value in a numerical mode, generating a normal cooling signal if the temperature drop value exceeds the preset temperature drop threshold value, and generating an abnormal cooling signal if the temperature drop value does not exceed the preset temperature drop threshold value.
Embodiment two:
as shown in fig. 2 and 3, the difference between the present embodiment and embodiment 1 is that the processor is communicatively connected to an equipment supervision decision module, where the equipment supervision decision module is configured to perform equipment supervision analysis on the magnetron sputtering reaction device, determine whether to generate an equipment overhaul signal through analysis, send the equipment overhaul signal to the supervision terminal, and send the equipment overhaul signal to the operation display early warning module, and when receiving the equipment overhaul signal, a supervisory person of the supervision terminal performs comprehensive maintenance inspection on the magnetron sputtering reaction device in time, so as to facilitate comprehensive maintenance inspection on equipment in time, ensure safe and stable operation of the magnetron sputtering reaction device, and facilitate promotion of service life of the equipment; the specific analysis process of the equipment supervision analysis is as follows:
acquiring a last maintenance inspection date of the magnetron sputtering reaction device, calculating a time difference between the current date and the last maintenance inspection date to obtain a maintenance value WX, calling a preset maintenance threshold value through a data storage module, comparing the maintenance value with the preset maintenance threshold value, generating an equipment maintenance signal if the maintenance value exceeds the preset maintenance threshold value, acquiring the actual working time of the magnetron sputtering reaction device in the time interval between the last maintenance inspection date and the current date if the maintenance value does not exceed the preset maintenance threshold value, and marking the actual working time as a time analysis value SX;
calculating the time analysis value SX and the dimension analysis value WX by a formula SF=a1 x SX+a2 x WX, taking the numerical values, and marking the numerical values as set value SF, wherein a1 and a2 are preset weight coefficients, a1 is more than a2 and more than 0, the numerical value of the set value SF is in a direct proportion with the time analysis value SX and the dimension analysis value WX, and the larger the numerical value of the set value SF is, the more needed the comprehensive maintenance and inspection is timely performed to eliminate potential safety hazards and ensure the stable and efficient operation of equipment; and calling a preset sub-threshold through the data storage module, comparing the value with the preset sub-threshold, generating an equipment maintenance signal if the value exceeds the preset sub-threshold, otherwise, not generating the equipment maintenance signal.
The working principle of the invention is as follows: when cooling down, analyzing the wafer by a wafer monitoring analysis module to judge whether the position of the wafer is abnormal, generating a wafer dislocation signal when judging that the position of the wafer is abnormal, judging whether the state of the wafer is qualified if the position of the wafer is not abnormal, generating a wafer state abnormality signal when judging that the state of the wafer is unqualified, sending out early warning to remind corresponding operators when generating the wafer dislocation signal or the wafer state abnormality signal, and automatically regulating and controlling the blowing speed of the cooling mechanism; the intelligent temperature control analysis module is used for judging whether to generate a cooling signal or not through analysis, controlling the cooling mechanism to cool the wafer through the processor when the cooling signal is generated, and realizing timely cooling of the wafer and internal components and effective monitoring and intelligent regulation and control of the cooling process through analysis in order to generate a reaction delay signal or a reaction normal signal and a cooling normal signal or a cooling abnormal signal in the cooling process.
The above formulas are all formulas with dimensions removed and numerical values calculated, the formulas are formulas with a large amount of data collected for software simulation to obtain the latest real situation, and preset parameters in the formulas are set by those skilled in the art according to the actual situation. The preferred embodiments of the invention disclosed above are intended only to assist in the explanation of the invention. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise form disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best understand and utilize the invention. The invention is limited only by the claims and the full scope and equivalents thereof.
Claims (5)
1. The reaction control display system in the magnetron sputtering cooling cavity is characterized by comprising a processor, a data storage module, a wafer monitoring analysis module, an intelligent temperature control analysis module and an operation early warning display module, wherein the wafer monitoring analysis module is used for analyzing a wafer when cooling and lowering the temperature, judging whether the position of the wafer is abnormal, generating a wafer dislocation signal when judging that the position of the wafer is abnormal, judging whether the state of the wafer is qualified if the position of the wafer is not abnormal, generating a wafer state abnormality signal when judging that the state of the wafer is unqualified, sending the wafer dislocation signal or the wafer state abnormality signal to the operation early warning display module through the processor, displaying and sending early warning through the operation early warning display module, and sending a corresponding control instruction by the processor to regulate and control the blowing speed of a cooling mechanism;
the intelligent temperature control analysis module is used for judging whether a cooling signal is generated or not through analysis, controlling the cooling mechanism to cool the wafer through the processor when the cooling signal is generated, generating a reaction delay signal or a reaction normal signal and a cooling normal signal or a cooling abnormal signal through analysis in the cooling process, sending the reaction delay signal or the reaction normal signal and the cooling normal signal or the cooling abnormal signal to the operation early warning display module through the processor, sending corresponding early warning when the operation early warning display module receives the reaction delay signal or the cooling abnormal signal, regulating and controlling the blowing speed of the cooling mechanism when the processor receives the cooling abnormal signal, and reducing the input temperature of an input cooling medium;
the data storage unit also stores all information of the process through time sequence, so that staff can conveniently call the information in the data storage unit through operating the early warning display module;
the specific operation process of the wafer monitoring and analyzing module comprises the following steps:
acquiring the position of the wafer before cooling, marking the position image as an initial standard image, acquiring the position of the wafer in real time in the cooling process, marking the real-time position image as a real-time analysis image, performing coincidence degree analysis on the real-time analysis image and the initial standard image to obtain an image coincidence value, calling a preset image coincidence threshold value through a data storage module, performing numerical comparison on the image coincidence value and the preset image coincidence threshold value, and generating a wafer dislocation signal if the image coincidence value does not exceed the preset image coincidence threshold value;
if the image superposition value exceeds the preset image superposition threshold value, acquiring the vibration frequency, the vibration amplitude and the double-sided air pressure difference value of the wafer at the detection moment, carrying out numerical calculation on the vibration frequency, the vibration amplitude and the double-sided air pressure difference value, marking the numerical value as a wafer state value, calling the preset wafer state threshold value through a data storage module, carrying out numerical comparison on the wafer state value and the preset wafer state threshold value, and if the wafer state value exceeds the preset wafer state threshold value, generating a wafer state abnormal signal.
2. The magnetron sputtering cooling intracavity reaction control display system of claim 1 wherein the intelligent temperature control analysis module comprises:
setting a plurality of temperature acquisition points on the surface of a wafer, acquiring real-time temperatures of the corresponding temperature acquisition points, summing all the real-time temperatures, taking an average value to obtain a temperature analysis value, performing numerical comparison on the real-time temperatures of the temperature acquisition points and a preset real-time temperature threshold value, marking the real-time temperatures exceeding the preset real-time temperature threshold value as an overtemperature value, performing numerical calculation on the number of the overtemperature values and the temperature analysis value to obtain Wen Kuangzhi, performing numerical comparison on Wen Kuangzhi and a preset Wen Kuang threshold value, generating a cooling signal if Wen Kuangzhi exceeds the preset Wen Kuang threshold value, and otherwise, not generating the cooling signal; when a cooling signal is generated, the related cooling component is controlled to cool down, and temperature control reaction analysis is performed in the cooling process.
3. The magnetron sputtering cooling intracavity reaction control display system of claim 2 wherein the specific analytical process of the temperature controlled reaction analysis is as follows;
when a cooling signal is generated, acquiring the generation time of the cooling signal and the time when a related cooling component starts to perform cooling operation, calculating the time difference between the time when the cooling operation starts and the generation time of the cooling signal to obtain a temperature control time difference, and calling a preset temperature control time difference threshold through a data storage module, wherein if the temperature control time difference exceeds the preset temperature control time difference threshold, a reaction delay signal is generated, otherwise, a reaction normal signal is generated;
and in the cooling process, acquiring an initial surface temperature value and a final surface temperature value of the wafer in the detection period, carrying out difference calculation on the initial surface temperature value and the final surface temperature value to obtain a temperature reduction value, calling a preset temperature reduction threshold value through a data storage module, carrying out numerical comparison on the temperature reduction value and the preset temperature reduction threshold value, generating a normal cooling signal if the temperature reduction value exceeds the preset temperature reduction threshold value, and otherwise, generating an abnormal cooling signal.
4. The magnetron sputtering cooling intracavity reaction control display system according to claim 1, wherein the processor is in communication connection with a device supervision decision module, the device supervision decision module is used for performing device supervision analysis on the magnetron sputtering reaction device, judging whether to generate a device overhaul signal through analysis, sending the device overhaul signal to a supervision terminal, and performing comprehensive maintenance inspection on the magnetron sputtering reaction device in time when a supervision person of the supervision terminal receives the device overhaul signal.
5. The magnetron sputtering cooling intracavity reaction control display system of claim 4 wherein the specific analytical process of the equipment supervision analysis is as follows:
acquiring the last maintenance inspection date of the magnetron sputtering reaction device, carrying out time difference calculation on the current date and the last maintenance inspection date to obtain a maintenance value, calling a preset maintenance threshold value through a data storage module, carrying out numerical comparison on the maintenance value and the preset maintenance threshold value, generating an equipment maintenance signal if the maintenance value exceeds the preset maintenance threshold value, otherwise, acquiring the actual working time length of the magnetron sputtering reaction device in the time interval between the last maintenance inspection date and the current date and marking the actual working time length as a time analysis value, carrying out numerical calculation on the time analysis value and the maintenance value and taking the numerical value of the time analysis value, marking the numerical value as a set value, calling the preset analysis threshold value through a data storage module, carrying out numerical comparison on the set value and the preset analysis threshold value, and generating the equipment maintenance signal if the set value exceeds the preset analysis threshold value, otherwise, not generating the equipment maintenance signal.
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