CN116634843A - Semiconductor power generation device in high-temperature occasion and manufacturing method - Google Patents
Semiconductor power generation device in high-temperature occasion and manufacturing method Download PDFInfo
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- CN116634843A CN116634843A CN202310506163.6A CN202310506163A CN116634843A CN 116634843 A CN116634843 A CN 116634843A CN 202310506163 A CN202310506163 A CN 202310506163A CN 116634843 A CN116634843 A CN 116634843A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 238000010248 power generation Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000001816 cooling Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000003466 welding Methods 0.000 claims description 22
- 239000003566 sealing material Substances 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 11
- 229910052718 tin Inorganic materials 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000005452 bending Methods 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- 230000005678 Seebeck effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- -1 respectively Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a semiconductor power generation device in a high-temperature occasion and a manufacturing method thereof. The problem that the existing thermoelectric power generation device cannot be suitable for high-temperature power generation occasions and cannot meet requirements is solved. The power generation device comprises a substrate and semiconductors arranged between the substrates, wherein the height of the semiconductors is configured into a first height range, the thickness of the substrate is configured into a first thickness range, and the device is manufactured through gradual preheating, high-temperature heating and gradual cooling processes. The invention increases the temperature application range of the manufactured semiconductor generator to 180-280 ℃ and expands the application occasions of the semiconductor generator.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor power generation device in a high-temperature occasion and a manufacturing method thereof.
Background
The working principle of thermoelectric semiconductor power generation devices is the SEEBECK EFFECT (SEEBECK EFFECT), i.e. when two different conductors are connected, if the two connection points maintain different temperature differences, a thermoelectromotive force es=s×Δt is generated in the conductors.
Thermoelectric devices can convert thermal energy into electrical energy. When there is a temperature difference across the thermoelectric device, an electric current can be generated by the so-called "seebeck effect". In order for this type of device to continue generating electricity, a stable temperature differential is required, and therefore these devices are often combined with stable sources of heat such as propane or natural gas, waste heat recovery units, etc. for small amounts of electricity generation. These products are often used in remote areas where electrical energy is needed but solar energy is insufficient or unavailable, such as offshore projects, petroleum pipelines, remote sensing, automobile exhaust gas recovery, steel mill waste heat recovery, data acquisition, and the like.
The existing thermoelectric refrigerating device can be used for temperature difference in different occasions due to the characteristics of semiconductor materials, but is only suitable for power generation occasions with heat sources lower than 180 ℃ due to the limitations of materials and processes of the existing thermoelectric power generation device. For power generation occasions where the heat source temperature is higher than 180 ℃, the existing thermoelectric power generation device cannot meet the requirements.
Disclosure of Invention
The invention mainly solves the problem that the existing thermoelectric power generation device cannot be suitable for high-temperature power generation occasions and cannot meet requirements, and provides a semiconductor power generation device for high-temperature occasions and a manufacturing method thereof.
The technical problems of the invention are mainly solved by the following technical proposal: the manufacturing method of the semiconductor power generation device in the high-temperature occasion comprises the following steps:
printing solder paste on the substrate to assemble a component;
the components are preheated step by step,
after the preheating, the high-temperature heating is carried out,
after heating, the temperature is reduced step by step,
cooling after gradually cooling;
and cleaning the welded assembly, and welding the lead.
The invention completes the welding of the semiconductor by preheating step by step and high-temperature heating welding and returning to the step-by-step cooling process, improves the yield and the reliability of products, makes the semiconductor power generation device with the temperature application range increased to 180-280 ℃, expands the application occasions of the semiconductor power generator and improves the market sales.
As a preferable scheme, the step-by-step preheating comprises a first-stage preheating and a second-stage preheating, wherein the first-stage preheating temperature is set to 190+/-10 ℃, the preheating time is set to 60+/-10S, the second-stage preheating temperature is set to 270+/-15 ℃, and the preheating time is set to 60+/-5S.
As a preferable scheme, the heating temperature is higher than the secondary preheating temperature, the high-temperature heating temperature is set to be 350+/-15 ℃, and the heating time is set to be 30+/-5S.
As a preferable scheme, the step-by-step cooling comprises a second-stage cooling and a first-stage cooling, wherein the second-stage cooling temperature is set to 270+/-15 ℃, the heating time is 15+/-5S, the first-stage cooling temperature is set to 190+/-10 ℃, and the heating time is 40+/-10S.
As a preferable scheme, the cooling time is more than or equal to 2min.
As a preferred solution, a sealing material is provided around the assembly for sealing. The periphery of the assembly is sealed by adopting a sealing material, and the inner semiconductor is placed for oxidation at high temperature.
The utility model provides a high temperature occasion semiconductor power generation device, includes base plate and the semiconductor of setting between the base plate, characterized by: the semiconductor is arranged in a first height range, the thickness of the substrate is arranged in a first thickness range, and the device is manufactured through gradual preheating, high-temperature heating and gradual cooling processes.
As a preferable scheme, the first height range of the semiconductor is more than or equal to 0.8mm, and the first thickness range of the substrate is more than or equal to 1.0mm. The higher the height of the semiconductor, the better the higher the height, at least greater than or equal to 0.8mm is required, the thicker the thickness of the substrate is used, and the thickness greater than or equal to 1.0mm is generally preferred, and thermal deformation at high temperatures is reduced.
As a preferable mode, the positive electrode lead and the negative electrode lead are connected on the same substrate, the positive electrode lead is connected with the P electrode of the semiconductor path on the substrate, and the negative electrode lead is connected with the N electrode of the semiconductor path. According to the scheme, the positions of the positive and negative wires of the traditional semiconductor power generation device are exchanged, the positions of the cold and hot surfaces are also exchanged along with the positions of the positive and negative wires, the substrate connected by the original wires is converted into the heat release surface from the heat absorption surface, the wires on the heat release surface are less susceptible to temperature influence, and the temperature application range of the product is improved.
As a preferred embodiment, the device length-width dimension is configured to be 25-60mm.
As a preferred embodiment, pbSnAg is used as the solder for semiconductor bonding. High-melting-point soldering tin PbSnAg is adopted, and the solid melting point is above 285 ℃.
Therefore, the invention has the advantages that: the method adopts thicker base plate and higher semiconductor, adopts high-melting point tin soldering, exchanges positive and negative guiding welding positions, and completes the welding of the semiconductor by preheating step by step and high-temperature heating welding and returning to the step-by-step cooling process, so that the temperature application range of the manufactured semiconductor generator is increased to 180-280 ℃, the application occasion of the semiconductor generator is enlarged, and the market sales amount is increased.
The semiconductor and the substrates on two sides are welded more fully and firmly by adopting the manufacturing processes of gradual preheating and gradual cooling, the proportion of unwelded and creeping welding defective products is reduced, the problem of tin bead splashing is reduced, the yield and the reliability of products are improved, and the power generation device with the temperature application range increased to 180-280 ℃ is manufactured.
Drawings
FIG. 1 is a flow chart of one fabrication of the present invention;
FIG. 2 is a schematic view of a structure of a substrate according to the present invention;
fig. 3 is a schematic side view of the present invention.
1-substrate 2-semiconductor 3-wire.
Detailed Description
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings.
Examples:
as shown in fig. 3, the semiconductor power generation device in the high temperature application of the present embodiment includes two substrates 1 and a semiconductor 2 arranged between the substrates, the two substrates being a lead side substrate and a non-lead side substrate, respectively, and a lead being connected to the lead side substrate.
Preferably, the semiconductor height h in the semiconductor power generation device in the high temperature occasion is configured to be a first height range, and the first height range is more than or equal to 0.8mm. The two substrate arrangement thicknesses H are arranged in a first thickness range, and the first thickness range is H & gt1.0 mm or more. The preferred arrangement range of the overall dimension length L and the width W of the device is 25-60mm. The positions of the positive and negative wires welded on the wire side substrate are interchanged. PbSnAg is adopted for device semiconductor welding and soldering. The periphery of the device is sealed by adopting a sealing material. The device is manufactured and formed by adopting the processes of gradual preheating, high-temperature heating and gradual cooling.
The semiconductor height h is set in a range related to the generated power, the generated power is formulated as follows,
wherein P is O For generating power, DT is the temperature difference, V O For generating output voltage, NT is the total number of power generation products, S M Seebeck coefficient, R, of power generation material M The total resistance of the power generation product;
from the formula, the power P O The higher the semiconductor height, the larger the corresponding DT, the more square the temperature difference DT, the test data are as follows:
according to the test and production cost, the preferred semiconductor height range is h is more than or equal to 0.8mm.
The thickness of the substrate is set, the substrate adopts ceramic chips, and the ceramic chips are required to have larger bending resistance because of larger thermal deformation in the high-temperature heating process. The resistance to bending formula is as follows:
wherein M is bending strength, b is width, d is thickness, f is tensile strength section coefficient, the width is generally set according to requirements, and the thickness can be designed by itself.
As can be seen from the moment of resistance formula, the moment of resistance is proportional to the square of the thickness. There is a close relationship between the thickness of the material and the resistance to bending, and when an external force is applied, the thickness of the material can assist in dispersing the pressure, so that the resistance to bending of the material is improved, and when the thickness of the material is increased, the resistance to bending of the material is also improved. This is because the thickness of the material can increase the moment of inertia when bending, making the material more difficult to bend. In this way, increasing the thickness of the tile also increases the rigidity and stability of the material, making it more resistant to external forces. Meanwhile, the production cost and the production experience are considered, and the thickness range of the ceramic chip is preferably H more than or equal to 1.0mm.
The wires include an anode wire and a cathode wire, the two wires are welded on the wire side substrate, the wire connection is changed in this embodiment, the positions of the original anode wire and the original cathode wire are exchanged, as shown in fig. 2, the anode wire is connected with the P pole of the semiconductor path on the wire side substrate, and the cathode wire is connected with the N pole of the semiconductor path. Because of the interchange of the positions of the wires, the positions of the cold and hot surfaces are also interchanged, so that the side group of the wires is formed into the cold surface, and the wires can be suitable for scenes higher than 180 ℃.
In the embodiment, high-melting-point soldering tin PbSnAg suitable for high-temperature occasions is adopted, the solid-state melting point is above 285 ℃, and the soldering tin proportion is 95% Pb, 5% Sn and 2.5% Ag.
The periphery of the device is sealed by adopting a sealing material, so that the oxidation of the semiconductor inside the device at high temperature is prevented. Specifically, the sealing material is arranged between the peripheries of the two substrates in a sealing manner, and seals the semiconductor inside the substrates. The height of the edge of the sealing material protruding out of the substrate is less than or equal to 0.5mm, except the root of the lead.
The device is manufactured and formed by adopting the processes of gradual preheating, high-temperature heating and gradual cooling. The gradual heating and preheating enable the high-temperature soldering tin to be melted repeatedly, so that the welding of the semiconductor and the substrates on two sides is more sufficient and firm, the proportion of unwelded and creeping welding defective products is reduced, and the reliability of product welding is improved. When the temperature is reduced step by step to reduce high-temperature rapid cooling, the surface temperature of the semiconductor is rapidly reduced, the internal temperature of the semiconductor is not reduced in time, and the cracking phenomenon of the semiconductor is caused by overlarge internal and external temperature difference of the semiconductor. Meanwhile, the problem of tin ball splashing is also reduced. The yield and the reliability of the product are further improved.
The embodiment also comprises a manufacturing method of the semiconductor power generation device in the high-temperature occasion, as shown in fig. 1, comprising the following steps:
step one: printing solder paste on the substrate to assemble a component;
and placing the non-wire side substrate and the wire side substrate on the special printing positioning jig, covering the corresponding printing screen, and uniformly scraping a layer of solder paste.
And assembling the product in the assembly jig, putting a non-wire side substrate, respectively putting corresponding P-type semiconductor and N-type semiconductor particles, and then covering the wire side substrate.
And placing the assembly on the carbon plates, placing a plurality of height limiting strips around and in the periphery of the assembly, covering another carbon plate, locking, and fixing the assembly between the two carbon plates.
Step two: the components are preheated step by step, high-temperature heating is carried out after preheating, step by step cooling is carried out after heating, and cooling is carried out after step by step cooling.
The heating equipment is a production line consisting of a two-stage preheating platform, a heating platform and a cooling platform. The temperature and time of each platform are preset. The primary preheating platform sets the primary preheating temperature to 190+/-10 ℃ and the preheating time to 60+/-10S; the secondary preheating platform sets the secondary preheating temperature to 270+/-15 ℃ and the preheating time to 60+/-5S; the heating platform sets the heating temperature to 350+/-15 ℃ and the heating time to 30+/-5S; returning to the secondary preheating platform after heating, setting the secondary cooling temperature to 270+/-15 ℃ and the heating time to 15+/-5S; returning to the primary preheating platform, setting the primary cooling temperature to 190+/-10 ℃ and heating time to 40+/-10S. The cooling time of the cooling platform is set to be more than or equal to 2 minutes.
Checking a temperature curve, and after the temperature of the platform reaches the requirement, testing the product, wherein the checked temperature curve meets the set requirement.
And heating/cooling the component, and starting to manufacture the product after the temperature curve is checked to be correct. And (3) moving the carbon plate with the components onto a primary preheating platform, opening an air source switch, automatically descending the platform to perform primary preheating, and opening the air source switch to ascend the primary preheating platform after the primary preheating time is reached. And moving the carbon plate to a secondary preheating platform, carrying out secondary preheating by the same operation, moving the carbon plate to a heating platform after the secondary preheating, carrying out high-temperature heating, returning the carbon plate to the secondary preheating platform after the heating is finished, carrying out secondary cooling, returning the carbon plate to the primary preheating platform after the secondary cooling, carrying out primary cooling, and finally moving the carbon plate to a cooling platform for cooling, wherein the welding process is finished.
Step three: and cleaning the welded assembly, and welding the lead.
Cleaning the welded assembly, and then checking the cleaned product; and (5) taking the corresponding guide, and welding the wire according to the position required by the design. And manufacturing the high-temperature power generation device.
The method adopts a welding process of gradual preheating, high-temperature heating and gradual cooling. The gradual heating and preheating enable the high-temperature soldering tin to be melted repeatedly, so that the welding of the semiconductor and the substrates on two sides is more sufficient and firm, the proportion of unwelded and creeping welding defective products is reduced, and the reliability of product welding is improved. When the temperature is reduced step by step to reduce high-temperature rapid cooling, the surface temperature of the semiconductor is rapidly reduced, the internal temperature of the semiconductor is not reduced in time, and the cracking phenomenon of the semiconductor is caused by overlarge internal and external temperature difference of the semiconductor. Meanwhile, the problem of tin ball splashing is also reduced. The yield and the reliability of the product are further improved. The product manufactured by the method has higher applicable temperature range and better reliability.
The effects are described below by experimental data. Quality inspection data for the assembled product for the different preheating/cooling parameters are shown in the following table:
as can be seen from the table, when the temperature and time parameters set by the invention are adopted, the final quality result is seen in the last row of the table, the total reject ratio is 3.45%, the lowest in all data is achieved, only 1 semiconductor creep welding is achieved in hot spot failure, semiconductor creep welding, semiconductor non-welding and semiconductor cracking, and the rest is not achieved.
The specific embodiments described herein are offered by way of example only to illustrate the spirit of the invention. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions thereof without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Although the terms substrate, semiconductor, wire, etc. are used more herein, the possibility of using other terms is not excluded. These terms are used merely for convenience in describing and explaining the nature of the invention; they are to be interpreted as any additional limitation that is not inconsistent with the spirit of the present invention.
Claims (10)
1. A manufacturing method of a semiconductor power generation device in a high-temperature occasion is characterized by comprising the following steps: the method comprises the following steps:
printing solder paste on the substrate to assemble a component;
the components are preheated step by step,
after the preheating, the high-temperature heating is carried out,
after heating, the temperature is reduced step by step,
cooling after gradually cooling;
and cleaning the welded assembly, and welding the lead.
2. The method for manufacturing the semiconductor power generation device in the high-temperature situation according to claim 1, wherein the step-by-step preheating comprises the steps of primary preheating and secondary preheating, wherein the primary preheating temperature is set to 190+/-10 ℃, the preheating time is set to 60+/-10S, the secondary preheating temperature is set to 270+/-15 ℃, and the preheating time is set to 60+/-5S.
3. The method for manufacturing a semiconductor power generation device in a high-temperature environment according to claim 2, wherein the heating temperature is higher than the secondary preheating temperature, the high-temperature heating temperature is set to be 350+/-15 ℃, and the heating time is set to be 30+/-5S.
4. The method for manufacturing the semiconductor power generation device for the high-temperature occasion according to claim 1, wherein the step-by-step cooling comprises a second-stage cooling and a first-stage cooling, the second-stage cooling temperature is set to 270+/-15 ℃, the heating time is 15+/-5S, the first-stage cooling temperature is set to 190+/-10 ℃, and the heating time is 40+/-10S.
5. The method for manufacturing the semiconductor power generation device in the high-temperature situation according to claim 1, wherein the cooling time is more than or equal to 2 minutes.
6. The method for manufacturing a semiconductor power generation device for high temperature applications according to any one of claims 1 to 5, wherein a sealing material is provided around the assembly for sealing.
7. A high temperature field semiconductor power device manufactured by the method of any one of claims 1 to 6, comprising a substrate and a semiconductor disposed between the substrates, characterized in that: the semiconductor height is configured into a first height range, the substrate thickness is configured into a first thickness range, and the device is manufactured through gradual preheating, high-temperature heating and gradual cooling processes.
8. The semiconductor power generation device for high temperature applications according to claim 7, wherein the first height range of the semiconductor is not less than 0.8mm, and the first thickness range of the substrate is not less than 1.0mm.
9. The semiconductor power device of claim 7, wherein the positive lead is connected to the P-pole of the semiconductor path on the substrate and the negative lead is connected to the N-pole of the semiconductor path.
10. The semiconductor power device of claim 7, wherein the solder for semiconductor bonding is PbSnAg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310506163.6A CN116634843A (en) | 2023-05-04 | 2023-05-04 | Semiconductor power generation device in high-temperature occasion and manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310506163.6A CN116634843A (en) | 2023-05-04 | 2023-05-04 | Semiconductor power generation device in high-temperature occasion and manufacturing method |
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| CN116634843A true CN116634843A (en) | 2023-08-22 |
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| CN202310506163.6A Pending CN116634843A (en) | 2023-05-04 | 2023-05-04 | Semiconductor power generation device in high-temperature occasion and manufacturing method |
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