CN116632480A - WLP filter, preparation method and electronic product - Google Patents
WLP filter, preparation method and electronic product Download PDFInfo
- Publication number
- CN116632480A CN116632480A CN202310643008.9A CN202310643008A CN116632480A CN 116632480 A CN116632480 A CN 116632480A CN 202310643008 A CN202310643008 A CN 202310643008A CN 116632480 A CN116632480 A CN 116632480A
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- layer
- wlp
- filter
- cavity
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000007789 sealing Methods 0.000 claims abstract description 13
- 230000002787 reinforcement Effects 0.000 claims abstract description 5
- 229910000679 solder Inorganic materials 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 78
- 239000010408 film Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
Abstract
The invention discloses a WLP filter, a preparation method and an electronic product. The WLP filter includes: a substrate; a metal electrode on the substrate; a sealing layer surrounding the metal electrode to form a resonant cavity of the metal electrode; a rewiring layer covering the sealing layer; a cavity reinforcement layer overlying the redistribution layer, and solder balls formed on the exposed redistribution layer. The WLP filter provided by the invention is provided with three protection layers, and the cavity reinforcing layer is an inorganic layer, so that the top cover in the WLP filter cannot collapse under the protection, thereby improving the product yield. And the process for forming the cavity fixing layer is simple and low in cost.
Description
Technical Field
The invention relates to a WLP filter, a preparation method of the WLP filter, an electronic product comprising the WLP filter, and belongs to the technical field of semiconductor packaging.
Background
Acoustic filters can be classified into acoustic surface filters (abbreviated as SAW) and body surface filters (abbreviated as BAW) according to their structures. They operate substantially the same except that there is a difference in the direction of propagation of the acoustic signal. Currently, the package structure of the acoustic filter includes a chip size package (abbreviated as CSP), a die-level sound table package (abbreviated as DSSP), a wafer-level package (Wafer level package abbreviated as WLP), and the like. When the packaging structure of the acoustic filter is integrated into the module, some matching circuits need to be arranged on the substrate of the module to form a complete circuit structure, so as to realize the function of the module.
At present, SAW filters in the form of conventional CSP packages have failed to meet consumer demand. The total thickness of the RF front-end module is not greater than 0.6mm, and the thickness of the SAW filter must be less than 0.4mm. Whereas conventional CSP packages do not allow the thickness of SAW filters to be reduced to 0.4mm. According to the research result of Qorvo corporation in the United states, the package size of wafer level package (abbreviated as WLP) can be reduced by 50% compared with CSP, and the thickness can be reduced by 0.13mm. Accordingly, attempts have been made to employ WLP filters in rf front-end modules.
However, the existing WLP filters have higher process complexity than CSP filters. For example, the dry film (i.e., roo layer) of a conventional WLP filter is subject to the high pressure generated by the molding compound during the reflow process, and the cavity is easily collapsed. In addition, a common film coating technique in semiconductor packages is to coat all chips or devices within a module with a film, which may result in chip size failing to meet the demand for miniaturization.
Disclosure of Invention
The primary technical problem to be solved by the invention is to provide a WLP filter.
Another technical problem to be solved by the present invention is to provide a method for preparing the WLP filter.
Another technical problem to be solved by the present invention is to provide an electronic product including the WLP filter.
In order to achieve the technical purpose, the invention adopts the following technical scheme:
according to a first aspect of an embodiment of the present invention, there is provided a WLP filter comprising,
a substrate;
a metal electrode on the substrate;
a sealing layer surrounding the metal electrode to form a resonant cavity of the metal electrode;
a rewiring layer covering the sealing layer,
a cavity reinforcement layer overlying the redistribution layer, and solder balls formed on the exposed redistribution layer.
Wherein preferably the material of the cavity-reinforcing layer comprises an inorganic substance.
Wherein preferably the cavity-reinforcing layer is any one of silicon nitride or silicon oxide.
Wherein preferably the cavity reinforcement layer covers the outer periphery of the resonant cavity.
Wherein preferably a first portion of the cavity-reinforcing layer overlies the rerouting layer surface; a second portion overlying the sealing surface; the third portion is located between the first portion and the second portion and forms a recessed area to accommodate the bump.
Wherein preferably the thickness of the cavity-reinforcing layer is greater than or equal to 1um.
According to a second aspect of an embodiment of the present invention, there is provided a method for manufacturing a WLP filter, including the steps of:
forming a metal electrode on the substrate of each cell;
forming a sealing layer around the metal electrode to form a resonant cavity of the metal electrode;
covering a rewiring layer on the surface of the sealing layer;
forming a cavity reinforcing layer on the surface of the rewiring layer, wherein part of the rewiring layer is exposed out of the cavity reinforcing layer;
manufacturing solder balls on the surface of the exposed rewiring layer;
cutting along the dicing lanes to form individual units.
Wherein preferably the cavity-reinforcing layer is any one of silicon nitride or silicon oxide.
Wherein preferably, the step of forming the cavity-reinforcing layer comprises:
depositing an inorganic layer on the surface of the rerouting layer by using a thin film deposition process;
and removing the photoresist by using an exposure development etching process, and keeping inorganic matters with predetermined patterns on the surface of the rewiring layer.
Preferably, the second minimum distance between the cavity reinforcing layer and the dicing street is smaller than the first minimum distance between the rewiring layer and the dicing street.
According to a third aspect of embodiments of the present invention, there is provided an electronic product comprising a WLP filter as described above.
Compared with the prior art, the invention has the following technical characteristics: the WLP filter is provided with three protection layers, and the cavity reinforcing layer is an inorganic layer, so that under the protection, the top cover in the WLP filter cannot collapse, and the product yield is improved. And the process for forming the cavity fixing layer is simple and low in cost.
Drawings
Fig. 1 is a schematic diagram of step S1 in a method for preparing a WLP filter according to a first embodiment of the invention;
fig. 2 is a schematic diagram of step S2 in the preparation method of the WLP filter in the first embodiment of the invention;
fig. 3 is a schematic diagram of step S3 in the preparation method of the WLP filter in the first embodiment of the invention;
fig. 4 is a schematic diagram of step S4 in the preparation method of the WLP filter in the first embodiment of the invention;
fig. 5 is a schematic diagram of step S5 in the preparation method of the WLP filter in the first embodiment of the invention;
fig. 6 is a schematic structural diagram of a WLP filter according to a second embodiment of the present invention.
Detailed Description
The technical contents of the present invention will be described in detail with reference to the accompanying drawings and specific examples.
First embodiment:
as shown in fig. 1 to 5, a first embodiment of the present invention discloses a preparation method of a WLP filter, which at least includes the following steps:
s1: a metal electrode 2, and a plurality of support walls (walls) surrounding the metal electrode 2 are formed on the substrate 1 of each cell.
In one embodiment of the present invention, a wafer level package structure is employed, and thus is divided into a plurality of cells 100 by dividing streets 10 on a substrate 1 (wafer), and a plurality of metal electrodes 2 are formed on the substrate 1 within each cell 100 to serve as interdigital electrodes of a SAW filter. Then, a film of an insulating material such as polyimide film (PI) is applied by Tape (Tape) and then peeled off, and a support wall material surrounding the metal electrode 2 is formed on the substrate 1 of each unit 100. Wherein the height of the supporting wall 3 is greater than the height of the metal electrode 2. Then, soft baking, exposure, post-exposure baking, developing, hard baking and other processes are utilized to manufacture the supporting wall 3 of the cavity in the WLP filter on the surface of the chip.
S2: a top cover (Roof) is formed at an end of the support wall 3 remote from the substrate 1 to form a resonant cavity 20 of the metal electrode 2.
As shown in fig. 2, after the support wall 3 is successfully manufactured, the steps of Tape (Tape) film pasting, exposure, post-exposure baking, film uncovering, developing, hard baking and the like are continued on the basis, and a top cover of the resonant cavity 20 of the WLP filter is manufactured on the surface of the substrate 1. Wherein the top cover 4 is covered over the support wall 3 to form a closed cavity 20 between the top cover 4, the support wall 3 and the base 1. The material of the top cover 4 and the material of the support wall 3 may be the same or different.
S3: after the resonator 20 is formed, the surfaces of the top cover 4 and the support wall 3 are covered with a rewiring (RDL for short) layer 5.
As shown in fig. 3, a metal layer is coated on the surfaces of the top cover and the supporting wall by using a sputtering process. And then manufacturing a re-wiring layer by using processes such as coating, exposure, development, electroplating, photoresist removal, etching and the like. The rewiring layer covers the upper surface and the side surfaces of the top cover, also covers the side surfaces of the supporting wall, and also covers the substrate surrounding the supporting wall. However, a portion of the cap 4 is exposed (greater than 10um in size) from the redistribution layer 5, forming an exposed region 40. Furthermore, the first minimum distance D1 between the redistribution layer and the scribe line 10 is greater than 20um.
S4: a cavity reinforcing layer 6 is formed on the surface of the rewiring layer by using a photoresist.
As shown in fig. 4, the cavity reinforcing layer 6 is fabricated by using a photoresist through a process of film deposition, coating, exposure, development, etching, etc. The cavity-reinforcing layer 6 comprises at least three parts: the first portion overlies the redistribution layer (which may prevent oxidation of the redistribution layer on the one hand and may strengthen the cavity structure on the other); the second part covers the exposed area (on the one hand bridging or short-circuiting between the rewiring layers can be prevented and on the other hand the cavity structure can be reinforced); the third portion is located between the first portion and the second portion, forming a recessed region to accommodate a Bump (Bump) for communicating the redistribution layer with the Bump. The first portion covers a portion of the upper face of the rewiring layer, the side face of the rewiring layer (support wall side face), and the upper face of the substrate surrounding the rewiring layer, and thus covers the entire periphery of the resonant cavity. In the second portion, the photoresist directly covers the top cap surface at the exposed area, so that insulation between the redistribution layer and the bump is enabled. The third portion is located above the rewiring layer such that the rewiring layer can be directly connected with the bump to form an electrical connection.
Both organic (e.g., photoresist PI/PR glue, etc.) and inorganic (e.g., oxide, nitride, etc.) materials may be used as the cavity-reinforcing layer 6. The cavity reinforcing layer 6 covers the entire periphery of the resonant cavity, and can improve the stability of the cavity structure. Moreover, since the cavity-reinforcing layer 6 covers the outer surface of the redistribution layer, the second minimum distance D2 between the cavity-reinforcing layer 6 and the dicing street 10 is smaller than D1, i.e. 0+.d2 < D1 is satisfied. In one embodiment of the invention, the thickness of the cavity-reinforcing layer 6 is greater than or equal to 1um.
Inorganic substances (e.g., silicon nitride, silicon oxide, etc.) have many advantages over photoresists: 1) High temperature resistance, and the melting point can reach thousands of degrees; 2) The thermal expansion coefficient is low, the thermal conductivity coefficient is high, the thermal shock resistance is good, and the thermal shock is not cracked from room temperature to 1000 ℃; 3) The chemical property is stable, and the corrosion is resistant; 4) The alloy has high hardness, wear resistance, high Mohs hardness and mechanical impact resistance; 5) The film thickness can be controlled within 2um (photoresist is generally above 5 um); 6) The compactness is relatively higher, and the reinforcement is better. It can be seen that the use of an inorganic substance as the cavity-reinforcing layer 6 can provide more reliable reinforcing performance than a photoresist.
In one embodiment of the present invention, the stability of the cavity structure can be improved by using silicon nitride or silicon oxide as the cavity reinforcing layer to cover the entire cavity. The process of forming the cavity reinforcing layer 6 on the surface of the rewiring layer by using the photoresist comprises the following sub-steps:
s41: depositing an inorganic layer on the surface of the rewiring layer by using a thin film deposition (PVD, CVD, etc.) process;
s42: the photoresist is removed by photoresist coating, photoresist exposure, photoresist development, etching (dry etching or wet etching), and inorganic substances (silicon nitride or silicon oxide) of a predetermined pattern are left on the surface of the re-wiring layer (as shown in fig. 4).
S5: bumps are formed in the recessed areas of the cavity reinforcing layer 6.
Bumps 7 required for packaging can be made on the surface of the second portion of the cavity-reinforcing layer 6 by electroplating/electroless plating, or ball-plating, as shown in fig. 5.
S6: cut along the dicing lanes to form units 100.
Second embodiment:
as shown in fig. 6, a second embodiment of the present invention discloses a WLP filter comprising a substrate 1, a metal electrode 2 on the substrate 1, a support wall 3 formed on the substrate around the metal electrode 2, a top cover 4 covering the support wall 3, a re-wiring layer 5 covering the support wall 3 and the top cover 4, a cavity fixing layer 6 covering the re-wiring layer, and bumps 7.
The support wall 3 and the top cover 4 together with the substrate 1 form a resonant cavity around the metal electrode 2 as a first protective layer of the resonant cavity. The rewiring layer 5 covers the top cover 4 on the supporting wall 3 and covers the supporting wall 3 and the top cover 4 to form a second protective layer for the resonant cavity 20, and the protection for the resonant cavity 20 is added outside the first protective layer (the supporting wall 3 and the top cover 4).
The cavity reinforcing layer 6 formed on the surface of the redistribution layer 5 covers the surfaces of the substrate 1, the redistribution layer, and the top cover 4, and is formed of photoresist, thereby functioning as an insulating protective layer, and forming a third protective layer to protect the resonant cavity 20 in addition to the first protective layer (the support wall 3 and the top cover 4).
Compared with the prior art, the WLP filter provided by the embodiment of the invention has three protection layers, and the cavity reinforcing layer is an inorganic layer, so that the top cover 4 cannot collapse, and the product yield of the filter is improved. Furthermore, the process of forming the cavity-fixing layer 6 is simple and low in cost.
Third embodiment:
the third embodiment of the present invention also provides an electronic product, which includes the WLP filter. The electronic product can be a wearable device, a communication terminal, an intelligent internet-connected automobile and the like.
The WLP filter, the preparation method and the electronic product provided by the invention are described in detail. Any obvious modifications to the present invention, without departing from the spirit thereof, would constitute an infringement of the patent rights of the invention and would take on corresponding legal liabilities.
Claims (15)
1. A WLP filter, comprising:
a substrate;
a metal electrode on the substrate;
a sealing layer surrounding the metal electrode to form a resonant cavity of the metal electrode;
a rewiring layer covering the sealing layer;
a cavity reinforcement layer overlying the redistribution layer, and solder balls formed on the exposed redistribution layer.
2. A WLP filter as recited in claim 1, wherein:
the material of the cavity reinforcing layer includes an inorganic substance.
3. A WLP filter as recited in claim 2, wherein:
the cavity reinforcing layer is any one of silicon nitride or silicon oxide.
4. A WLP filter as recited in claim 1, wherein:
the cavity reinforcing layer covers the outer circumference of the resonant cavity.
5. A WLP filter as recited in claim 1, wherein:
a first part of the cavity reinforcing layer covers the surface of the rewiring layer; a second portion overlying the sealing surface; the third portion is located between the first portion and the second portion and forms a recessed area to accommodate the bump.
6. A WLP filter as recited in claim 5, wherein:
the thickness of the cavity reinforcing layer is greater than or equal to 1um.
7. The preparation method of the WLP filter is characterized by comprising the following steps of:
forming a metal electrode on the substrate of each cell;
forming a sealing layer around the metal electrode to form a resonant cavity of the metal electrode;
covering a rewiring layer on the surface of the sealing layer;
forming a cavity reinforcing layer on the surface of the rewiring layer, wherein part of the rewiring layer is exposed out of the cavity reinforcing layer;
manufacturing solder balls on the exposed surface of the rewiring layer;
cutting along the dicing lanes to form individual units.
8. A method of preparing a WLP filter as recited in claim 7, wherein:
the material of the cavity reinforcing layer includes an inorganic substance.
9. A method of preparing a WLP filter as recited in claim 8, wherein:
the cavity reinforcing layer is any one of silicon nitride or silicon oxide.
10. A method of preparing a WLP filter as recited in claim 7, wherein forming the cavity-enhancing layer comprises the sub-steps of:
depositing an inorganic layer on the surface of the rerouting layer by using a thin film deposition process;
and removing the photoresist by using an exposure development etching process, and keeping inorganic matters with predetermined patterns on the surface of the rewiring layer.
11. A method of preparing a WLP filter as recited in claim 7, wherein:
the cavity reinforcing layer covers the outer circumference of the resonant cavity.
12. A method of preparing a WLP filter as recited in claim 7, wherein:
a first part of the cavity reinforcing layer covers the surface of the rewiring layer; a second portion overlying the sealing surface; the third portion is located between the first portion and the second portion and forms a recessed area to accommodate the bump.
13. A method of preparing a WLP filter as recited in claim 7, wherein:
the second minimum distance between the cavity reinforcing layer and the cutting channel is smaller than the first minimum distance between the rewiring layer and the cutting channel.
14. A method of preparing a WLP filter as recited in claim 7, wherein:
the thickness of the cavity reinforcing layer is greater than or equal to 1um.
15. An electronic product comprising a WLP filter as claimed in any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310643008.9A CN116632480A (en) | 2023-06-01 | 2023-06-01 | WLP filter, preparation method and electronic product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310643008.9A CN116632480A (en) | 2023-06-01 | 2023-06-01 | WLP filter, preparation method and electronic product |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116632480A true CN116632480A (en) | 2023-08-22 |
Family
ID=87591779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310643008.9A Pending CN116632480A (en) | 2023-06-01 | 2023-06-01 | WLP filter, preparation method and electronic product |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116632480A (en) |
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2023
- 2023-06-01 CN CN202310643008.9A patent/CN116632480A/en active Pending
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