CN116631884A - Semiconductor packaging method - Google Patents
Semiconductor packaging method Download PDFInfo
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- CN116631884A CN116631884A CN202310700219.1A CN202310700219A CN116631884A CN 116631884 A CN116631884 A CN 116631884A CN 202310700219 A CN202310700219 A CN 202310700219A CN 116631884 A CN116631884 A CN 116631884A
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- 238000000034 method Methods 0.000 title claims abstract description 91
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 63
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 107
- 239000010410 layer Substances 0.000 claims abstract description 98
- 238000001039 wet etching Methods 0.000 claims abstract description 35
- 239000000110 cooling liquid Substances 0.000 claims abstract description 25
- 239000012790 adhesive layer Substances 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000006355 external stress Effects 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 238000012858 packaging process Methods 0.000 description 3
- 239000012466 permeate Substances 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008093 supporting effect Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A semiconductor packaging method comprises forming a bonding adhesive layer, a metal layer and a packaging structure on one side of a temporary carrier; then, irradiating ultraviolet rays on the bonding adhesive layer by adopting an optical bonding process; when the packaging structure and the temporary carrier plate are not completely de-bonded through an optical de-bonding process, judging that a first metal area which is in direct contact with part of the temporary carrier plate exists in the metal layer, and bonding the packaging structure and the temporary carrier plate Jie Jian by adopting an enhanced de-bonding process; the enhanced de-bonding process comprises the following steps: grinding a temporary carrier plate with partial thickness from the surface of one side of the temporary carrier plate, which is away from the metal layer, and applying cooling liquid to the temporary carrier plate in the process of grinding the temporary carrier plate with partial thickness so as to generate cracks in the temporary carrier plate; and placing the temporary carrier plate with the cracks in wet etching liquid, and penetrating the wet etching liquid into the first metal area through the cracks and dissolving and removing the first metal area. The semiconductor packaging method can enable the packaging structure and the temporary carrier to be successfully de-bonded.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor packaging method.
Background
A semiconductor packaging method, as shown in fig. 1, comprising: coating a bonding adhesive layer 4 on the temporary carrier plate 2; sputtering a metal layer 3 on the surface of one side of the bonding adhesive layer 4, which faces away from the temporary carrier plate 2; preparing a packaging structure 1 on one side of the metal layer 3 away from the bonding adhesive layer 4; after that, the package structure 1 is detached from the temporary carrier 2 (not shown).
However, when the package structure 1 is detached from the temporary carrier 2, there may be a case where the package structure 1 cannot be successfully detached from the temporary carrier 2, and a waste piece may occur.
Disclosure of Invention
The invention aims to solve the technical problem that the packaging structure in the prior art cannot be successfully de-bonded from the temporary carrier plate.
In order to solve the above technical problems, the present invention provides a semiconductor packaging method, comprising: providing a temporary carrier plate; forming a bonding adhesive layer on one side surface of the temporary carrier plate; forming a metal layer on the surface of one side of the bonding adhesive layer, which is away from the temporary carrier plate; forming a packaging structure on one side of the metal layer, which is away from the temporary carrier plate; after the packaging structure is formed, an optical bonding-releasing process is adopted to irradiate ultraviolet rays on the bonding adhesive layer; when the packaging structure and the temporary carrier plate are not completely de-bonded through an optical de-bonding process, judging that a first metal area which is in direct contact with part of the temporary carrier plate exists in the metal layer, and bonding the packaging structure and the temporary carrier plate Jie Jian by adopting an enhanced de-bonding process; the enhanced de-bonding process comprises the following steps: grinding a temporary carrier plate with partial thickness from the surface of one side of the temporary carrier plate, which is away from the metal layer, and applying cooling liquid to the temporary carrier plate in the process of grinding the temporary carrier plate with partial thickness so as to generate cracks in the temporary carrier plate; providing wet etching liquid; and placing the temporary carrier plate with the cracks in the wet etching liquid, and penetrating the wet etching liquid into the first metal area through the cracks and dissolving and removing the first metal area.
Optionally, the material of the metal layer includes Al.
Optionally, the wet etching solution comprises an NaOH solution, wherein the mass percentage of the NaOH solution is 2% -20%.
Optionally, the step of applying the cooling liquid to the temporary carrier plate includes: and spraying cooling liquid on the temporary carrier plate.
Optionally, before the cooling liquid is applied to the temporary carrier plate, the temperature of the cooling liquid is 0-30 ℃.
Optionally, the step of grinding the temporary carrier plate with a partial thickness from a side surface of the temporary carrier plate facing away from the metal layer includes: removing the temporary carrier plate with the first thickness from the surface of one side of the temporary carrier plate, which is away from the metal layer, by adopting a rough grinding process; and removing the temporary carrier plate with the second thickness from the surface of one side of the temporary carrier plate, which is away from the metal layer, by adopting a finish grinding process.
Optionally, the temporary carrier plate has an initial thickness prior to performing the enhanced de-bonding process; the first thickness is 1/2-2/3 of the initial thickness; the second thickness is 1/20-1/15 of the initial thickness.
Optionally, the rough grinding process and the fine grinding process both adopt grinding wheels, the mesh number of the grinding wheels adopted in the rough grinding process is 300-500 meshes, and the mesh number of the grinding wheels adopted in the fine grinding process is 2000-6000 meshes.
Optionally, the step of forming a package structure on a side of the metal layer facing away from the temporary carrier includes: forming a rewiring structure on one side of the metal layer, which is away from the temporary carrier plate; a chip body is arranged on one side, away from the metal layer, of the rewiring structure, and a conductive connecting piece is arranged between the chip body and the rewiring structure; forming an underfill encapsulant layer between the chip body and the reroute structure that encapsulates the conductive connections; and forming a plastic sealing layer for sealing the underfill sealing layer and the chip body on one side of the rerouting structure, which is away from the metal layer.
Optionally, after the wet etching solution dissolves and removes the first metal region, the wet etching solution contacts the rerouting structure, and the wet etching solution does not chemically react with the rerouting structure.
The technical scheme of the invention has the following technical effects:
according to the semiconductor packaging method provided by the technical scheme of the invention, when the packaging structure and the temporary carrier plate are not completely de-bonded through the optical de-bonding process, the first metal area which is in direct contact with part of the temporary carrier plate is judged to exist in the metal layer, and the packaging structure and the temporary carrier plate are continuously de-bonded through the enhanced de-bonding process. The enhanced de-bonding process comprises the following steps: the temporary carrier plate with partial thickness is ground on the surface of one side, deviating from the metal layer, of the temporary carrier plate, so that the path of wet etching liquid penetrating into the first metal area is shortened, and the temperature of the temporary carrier plate is higher in the process of grinding the surface of one side, deviating from the metal layer, of the temporary carrier plate. And applying cooling liquid to the temporary carrier plate in the process of grinding the temporary carrier plate with the thickness of the part, wherein when the temporary carrier plate is contacted with the cooling liquid with a larger temperature difference, the temporary carrier plate is subjected to larger internal thermal stress due to rapid temperature change, so that cracks are generated in the temporary carrier plate. In the step of polishing the surface of the temporary carrier plate, which is away from the metal layer, external stress of the temporary carrier plate generated by polishing can assist in crack generation. The temporary carrier plate with the cracks is placed in wet etching liquid, the wet etching liquid permeates into the first metal area through the cracks in the temporary carrier plate and dissolves to remove the first metal area, so that the binding force between the temporary carrier plate and the metal layer is lost, the binding force between the temporary carrier plate and the packaging structure is further lost, the temporary carrier plate and the packaging structure can be easily peeled off, and the debonding of the packaging structure and the temporary carrier plate is completed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a prior art semiconductor packaging method;
FIG. 2 is a flow chart of a semiconductor packaging method according to an embodiment of the present invention;
fig. 3 to 9 are schematic structural diagrams illustrating a semiconductor packaging process according to an embodiment of the invention.
Detailed Description
As described in the background art, in the semiconductor packaging method in the prior art, the package structure cannot be successfully de-bonded from the temporary carrier.
After the study of the inventor, the observation under an optical microscope shows that after the bonding adhesive layer 4' is coated on the temporary carrier plate 2', a part of area without the bonding adhesive layer still exists on the temporary carrier plate 2', so that the metal layer 3' can be directly sputtered on part of the surface of the temporary carrier plate 2 '. After the part of the metal layer 3 'is subjected to a high-temperature heat treatment process of a packaging process, metal atoms corresponding to the metal layer 3' can move into the temporary carrier plate 2 'towards the temporary carrier plate 2', so that the binding force between the metal layer 3 'and the temporary carrier plate 2' is large. In the process of unbinding the packaging structure 1 'from the temporary carrier plate 2' by adopting an optical unbinding process, although the bonding adhesive layer 4 'loses viscosity, the temporary carrier plate 2' is directly combined with the metal layer 3', so that the packaging structure still cannot be unbinding successfully from the temporary carrier plate 2', and waste chips are caused. The presence of the scrap leads to the rejection of the chips carried on the temporary carrier plate 2' and a consequent increase in the cost of the packaging process. Therefore, there is a need to solve the problem that the package structure cannot be successfully de-bonded from the temporary carrier.
On the basis, the invention provides a semiconductor packaging method, which enables the packaging structure to be successfully de-bonded from the temporary carrier.
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
An embodiment of the present invention provides a semiconductor packaging method, referring to fig. 1 in combination, including:
step S1: providing a temporary carrier plate;
step S2: forming a bonding adhesive layer on one side surface of the temporary carrier plate;
step S3: forming a metal layer on the surface of one side of the bonding adhesive layer, which is away from the temporary carrier plate;
step S4: forming a packaging structure on one side of the metal layer, which is away from the temporary carrier plate;
step S5: after the packaging structure is formed, an optical bonding-releasing process is adopted to irradiate ultraviolet rays on the bonding adhesive layer;
step S6: when the packaging structure and the temporary carrier plate are not completely de-bonded through an optical de-bonding process, judging that a first metal area which is in direct contact with part of the temporary carrier plate exists in the metal layer, and bonding the packaging structure and the temporary carrier plate Jie Jian by adopting an enhanced de-bonding process; the enhanced de-bonding process comprises the following steps: grinding a temporary carrier plate with partial thickness from the surface of one side of the temporary carrier plate, which is away from the metal layer, and applying cooling liquid to the temporary carrier plate in the process of grinding the temporary carrier plate with partial thickness so as to generate cracks in the temporary carrier plate; providing wet etching liquid; and placing the temporary carrier plate with the cracks in the wet etching liquid, and penetrating the wet etching liquid into the first metal area through the cracks and dissolving and removing the first metal area.
In this embodiment, when the package structure and the temporary carrier are not completely bonded by the optical bonding process, it is determined that the first metal region directly contacting with a portion of the temporary carrier exists in the metal layer, and the package structure and the temporary carrier are continuously bonded by the enhanced bonding process. The enhanced de-bonding process comprises the following steps: the temporary carrier plate with partial thickness is ground on the surface of one side, deviating from the metal layer, of the temporary carrier plate, so that the path of wet etching liquid penetrating into the first metal area is shortened, and the temperature of the temporary carrier plate is higher in the process of grinding the surface of one side, deviating from the metal layer, of the temporary carrier plate. And applying cooling liquid to the temporary carrier plate in the process of grinding the temporary carrier plate with the thickness of the part, wherein when the temporary carrier plate is contacted with the cooling liquid with a larger temperature difference, the temporary carrier plate is subjected to larger internal thermal stress due to rapid temperature change, so that cracks are generated in the temporary carrier plate. In the step of polishing the surface of the temporary carrier plate, which is away from the metal layer, external stress of the temporary carrier plate generated by polishing can assist in crack generation. The temporary carrier plate with the cracks is placed in wet etching liquid, the wet etching liquid permeates into the first metal area through the cracks in the temporary carrier plate and dissolves to remove the first metal area, so that the binding force between the temporary carrier plate and the metal layer is lost, the binding force between the temporary carrier plate and the packaging structure is further lost, the temporary carrier plate and the packaging structure can be easily peeled off, and the debonding of the packaging structure and the temporary carrier plate is completed.
The semiconductor packaging method is described in detail below with reference to fig. 3 to 9.
Referring to fig. 3, a temporary carrier plate 2 is provided; and forming a bonding adhesive layer 4 on one side surface of the temporary carrier plate 2.
The temporary carrier plate 2 comprises a glass carrier plate.
The step of forming the bonding adhesive layer 4 on one side surface of the temporary carrier plate 2 includes: and a bonding adhesive layer 4 is coated on one side surface of the temporary carrier plate 2. The material of the bonding glue layer 4 is a material which can lose adhesion through an optical bonding process.
With continued reference to fig. 3, a metal layer 3 is formed on the surface of one side of the bonding adhesive layer 4 facing away from the temporary carrier plate 2; and forming a packaging structure on one side of the metal layer 3 away from the temporary carrier plate 2.
The metal layer 3 has better binding force with the temporary carrier plate 2 through the bonding adhesive layer 4, so that the temporary carrier plate 2 and the packaging structure are stably bonded.
In some embodiments, the material of the metal layer 3 comprises Al.
The metal layer 3 is of a single-layer structure or a multi-layer structure.
In one embodiment, the thickness of the metal layer 3 is 0.5 microns to 3 microns, such as 0.5 microns, 1 micron, 2 microns or 3 microns. The thickness of the metal layer 3 does not need to be too large, so that the first metal region of the metal layer can be removed easily in the subsequent enhanced de-bonding process.
In one embodiment, the step of forming the package structure on the side of the metal layer 3 facing away from the temporary carrier 2 includes: forming a rewiring structure 14 on the side of the metal layer 3 facing away from the temporary carrier plate 2; a chip body 5 is arranged on one side of the rewiring structure 14, which is away from the metal layer 3, and a conductive connecting piece is arranged between the chip body 5 and the rewiring structure 14; forming an underfill encapsulation layer 132 encapsulating the conductive connection members between the chip body 5 and the rerouting structure 14; a plastic sealing layer 133 is formed on the side of the redistribution structure 14 facing away from the metal layer 3, and encapsulates the underfill encapsulation layer 132 and the chip body 5.
The re-wiring structure 14 includes a re-wiring layer 141 and a dielectric layer 142, the re-wiring layer 141 is located in the dielectric layer 142, and the re-wiring layer 141 may be provided in multiple layers.
In one embodiment, before the chip body 5 is disposed on the side of the rewiring structure 14 facing away from the metal layer 3, an active surface of the chip body 5 is provided with a chip built-in pad, a conductive pad 131 and a bonding layer 134 are disposed on the active surface side of the chip body 5, the conductive pad 131 is disposed on the surface of the chip built-in pad, and the bonding layer 134 is disposed on the surface of the conductive pad 131 facing away from the chip built-in pad.
In one embodiment, the step of forming the package structure on the side of the metal layer 3 facing away from the temporary carrier 2 further includes: an interconnect pad 135 is formed on a portion of a side surface of the redistribution structure 14 facing away from the metal layer 3. In the step of providing the chip body 5 on the side of the rewiring structure 14 facing away from the metal layer 3, the conductive traces 131 are connected to the interconnect pads 135 by means of solder layers 134. The chip body 5 is electrically connected through the chip built-in pad, the conductive member 131, the bonding layer 134, the interconnection pad 135 and the rewiring structure 14.
Referring to fig. 4, after the package structure is formed, ultraviolet rays are irradiated to the bonding adhesive layer 4 using an optical debonding process.
When the package structure and the temporary carrier plate 2 are not completely bonded through an optical bonding-releasing process, the first metal area which is in direct contact with part of the temporary carrier plate 2 is judged to exist in the metal layer 3, and the package structure and the temporary carrier plate 2 are bonded through an enhanced bonding-releasing process.
Referring to fig. 5 and 6, a temporary carrier plate 2 of a partial thickness is ground from a side surface of the temporary carrier plate 2 facing away from the metal layer 3, and a cooling liquid is applied to the temporary carrier plate 2 during grinding of the temporary carrier plate 2 of the partial thickness so that cracks are generated in the temporary carrier plate 2 (refer to fig. 7).
During the grinding of the surface of the side of the temporary carrier plate 2 facing away from the metal layer 3, the temperature of the temporary carrier plate 2 may be relatively high, for example, the temporary carrier plate 2 is in a high temperature state of 200 ℃ or higher due to the grinding. The cooling liquid is applied to the temporary carrier plate 2 in the process of grinding the temporary carrier plate 2 with partial thickness, and when the temporary carrier plate 2 contacts the cooling liquid with a larger temperature difference, the temporary carrier plate 2 brings larger internal thermal stress due to rapid temperature change, so that cracks are generated in the temporary carrier plate 2. Specifically, the internal thermal stress of the temporary carrier plate 2 is matched with external stress received by the temporary carrier plate 2 during grinding, and the strength of the temporary carrier plate 2 is weakened when the temporary carrier plate 2 is thinned to a certain thickness structure, so that cracks extending to the surface of the temporary carrier plate 2 are generated inside the temporary carrier plate 2. In the step of polishing the surface of the temporary carrier plate, which is away from the metal layer, external stress of the temporary carrier plate generated by polishing can assist in crack generation.
In some embodiments, the step of grinding the temporary carrier plate 2 with a partial thickness from a side surface of the temporary carrier plate 2 facing away from the metal layer 3 comprises: referring to fig. 5, a rough grinding process is used to remove the temporary carrier plate with a first thickness from a surface of a side of the temporary carrier plate facing away from the metal layer; referring to fig. 6, a finish grinding process is used to remove the temporary carrier plate of the second thickness from a side surface of the temporary carrier plate facing away from the metal layer. The temporary carrier plate 2 is applied with a cooling liquid in performing both the rough grinding process and the finish grinding process.
In some embodiments, the rough grinding process and the finish grinding process both use grinding wheels, the grinding wheels used in the rough grinding process have a mesh size of 300 mesh to 500 mesh, and the finishing grinding process uses grinding wheels having a mesh size of 2000 mesh to 6000 mesh.
The rough grinding process grinds and removes the temporary carrier plate with more thickness, thereby improving the grinding rate. The finish grinding process enables the grinding end point to be well controlled.
The larger the particle diameter of the abrasive grains of the grinding wheel, the larger the volume of the powder obtained by grinding the temporary carrier plate 2 removed by a single grinding, wherein the larger the particle diameter of the abrasive grains, the larger the acting force applied to the temporary carrier plate 2 by the grinding machine head due to the larger single cutting depth, and therefore, the larger the acting force transmitted to the package structure by the grinding machine head through the temporary carrier plate 2. Especially in the final stage of grinding of the temporary carrier plate 2, the residual thickness of the temporary carrier plate 2 is thinner, namely the mechanical supporting force of the temporary carrier plate 2 to the packaging structure is also lower, so that a fine grinding process is adopted in the final stage of grinding of the temporary carrier plate 2, the phenomenon that a grinding mechanical head brings larger internal stress to materials in the whole packaging structure is avoided, the mechanical strength of the packaging structure is further avoided being reduced, layering at a material interface is avoided, and the reliability is improved.
In some embodiments, the temporary carrier plate has an initial thickness prior to performing the enhanced de-bonding process; the first thickness is 1/2-2/3 of the initial thickness; the second thickness is 1/20-1/15 of the initial thickness.
In some embodiments, the initial thickness is 1000 microns to 2000 microns thick, the first thickness is 500 microns to 1500 microns, and the second thickness is 50 microns to 130 microns.
In some embodiments, the rough grinding process and the fine grinding process together complete the temporary carrier plate 2 grinding a portion of the thickness from a side surface of the temporary carrier plate 2 facing away from the metal layer 3, such that the remaining thickness of the temporary carrier plate 2 is 400-700 microns. The residual thickness of the temporary carrier plate 2 is not too small, so that the residual temporary carrier plate 2 can also have better supporting and buffering effects on the packaging structure; the residual thickness of the temporary carrier plate 2 is not too large, so that the path of the subsequent wet etching liquid penetrating into the first metal area through the cracks in the temporary carrier plate 2 is smaller. Secondly, cracks will only occur when the thickness of the temporary carrier plate 2 remaining after grinding is less than 700 μm.
In some embodiments, the step of applying the cooling liquid to the temporary carrier plate 2 is: and spraying cooling liquid on the temporary carrier plate 2.
In some embodiments, the cooling fluid comprises cooling water.
In some embodiments, the parameters of spraying the temporary carrier plate 2 with the cooling liquid include: the flow rate is 3L/min to 5L/min, for example, 4L/min.
Before the cooling liquid is applied to the temporary carrier plate 2, the temperature of the cooling liquid is 0-30 ℃.
Referring to fig. 8, a wet etching solution is provided; the temporary carrier plate 2 with the cracks is placed in the wet etching liquid, and the wet etching liquid penetrates into the first metal area through the cracks and dissolves and removes the first metal area.
In some embodiments, the material of the metal layer 3 includes Al, and the wet etching solution includes NaOH solution. The mass percentage of the NaOH solution is 2% -20%.
After the wet etching solution dissolves and removes the first metal region, the wet etching solution contacts the re-wiring structure 14, and the wet etching solution does not chemically react with the re-wiring structure 14.
The temporary carrier plate 2 with cracks is placed in wet etching liquid, the wet etching liquid permeates to the first metal area through the cracks in the temporary carrier plate 2 and dissolves to remove the first metal area, so that the binding force between the temporary carrier plate 2 and the metal layer 3 is lost, the binding force between the temporary carrier plate 2 and the packaging structure is further lost, the temporary carrier plate 2 and the packaging structure can be easily peeled off, and the debonding of the packaging structure and the temporary carrier plate 2 is completed.
It should be noted that, in another embodiment of the present invention, the chip bodies 5 are disposed on a side of the redistribution structure 14 facing away from the metal layer 3, the number of the chip bodies 5 is a plurality, the plurality of chip bodies 5 form a chip body array, a plurality of dummy chips 51 are disposed on a side of the redistribution structure 14 facing away from the metal layer 3, and the plurality of dummy chips 51 are disposed around the chip body array. The plastic layer also encapsulates the dummy chip 51. The overall strength of the package structure of the dummy chip 51 reduces the probability of cracking of the package structure during grinding and thinning of the temporary carrier plate 2. Meanwhile, the plastic sealing layer can play a certain buffering role, so that the oscillation received when the temporary carrier plate 2 is ground is small, and the possibility of cracking of the packaging structure is reduced.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (10)
1. A semiconductor packaging method, comprising:
providing a temporary carrier plate;
forming a bonding adhesive layer on one side surface of the temporary carrier plate;
forming a metal layer on the surface of one side of the bonding adhesive layer, which is away from the temporary carrier plate;
forming a packaging structure on one side of the metal layer, which is away from the temporary carrier plate;
after the packaging structure is formed, an optical bonding-releasing process is adopted to irradiate ultraviolet rays on the bonding adhesive layer;
when the packaging structure and the temporary carrier plate are not completely de-bonded through an optical de-bonding process, judging that a first metal area which is in direct contact with part of the temporary carrier plate exists in the metal layer, and bonding the packaging structure and the temporary carrier plate Jie Jian by adopting an enhanced de-bonding process;
the enhanced de-bonding process comprises the following steps: grinding a temporary carrier plate with partial thickness from the surface of one side of the temporary carrier plate, which is away from the metal layer, and applying cooling liquid to the temporary carrier plate in the process of grinding the temporary carrier plate with partial thickness so as to generate cracks in the temporary carrier plate; providing wet etching liquid; and placing the temporary carrier plate with the cracks in the wet etching liquid, and penetrating the wet etching liquid into the first metal area through the cracks and dissolving and removing the first metal area.
2. The semiconductor packaging method of claim 1, wherein the material of the metal layer comprises Al.
3. The semiconductor packaging method according to claim 2, wherein the wet etching solution comprises a NaOH solution, and the mass percentage of the NaOH solution is 2% -20%.
4. The semiconductor packaging method according to claim 1, wherein the step of applying a cooling liquid to the temporary carrier plate is: and spraying cooling liquid on the temporary carrier plate.
5. The semiconductor packaging method according to claim 1 or 4, wherein a temperature of the cooling liquid is 0 degrees celsius to 30 degrees celsius before the application of the cooling liquid to the temporary carrier.
6. The semiconductor packaging method according to claim 1, wherein the step of polishing the temporary carrier of a partial thickness from a side surface of the temporary carrier facing away from the metal layer comprises: removing the temporary carrier plate with the first thickness from the surface of one side of the temporary carrier plate, which is away from the metal layer, by adopting a rough grinding process; and removing the temporary carrier plate with the second thickness from the surface of one side of the temporary carrier plate, which is away from the metal layer, by adopting a finish grinding process.
7. The semiconductor packaging method of claim 6, wherein the temporary carrier has an initial thickness prior to performing the enhanced de-bonding process; the first thickness is 1/2-2/3 of the initial thickness; the second thickness is 1/20-1/15 of the initial thickness.
8. The method of packaging a semiconductor according to claim 6, wherein the rough grinding process and the finish grinding process each use grinding wheels, the number of grinding wheels used in the rough grinding process is 300 to 500 mesh, and the number of grinding wheels used in the finish grinding process is 2000 to 6000 mesh.
9. The semiconductor packaging method according to claim 1, wherein the step of forming a package structure on a side of the metal layer facing away from the temporary carrier plate includes: forming a rewiring structure on one side of the metal layer, which is away from the temporary carrier plate; a chip body is arranged on one side, away from the metal layer, of the rewiring structure, and a conductive connecting piece is arranged between the chip body and the rewiring structure; forming an underfill encapsulant layer between the chip body and the reroute structure that encapsulates the conductive connections; and forming a plastic sealing layer for sealing the underfill sealing layer and the chip body on one side of the rerouting structure, which is away from the metal layer.
10. The semiconductor packaging method of claim 9, wherein after the wet etching solution dissolves and removes the first metal region, the wet etching solution contacts the re-wiring structure, and the wet etching solution does not chemically react with the re-wiring structure.
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| CN117457618B (en) * | 2023-12-25 | 2024-04-09 | 长电集成电路(绍兴)有限公司 | Chip packaging structure and chip packaging method |
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