CN116631833A - Ion implanter capable of customizing selected area and method - Google Patents
Ion implanter capable of customizing selected area and method Download PDFInfo
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- CN116631833A CN116631833A CN202310817055.0A CN202310817055A CN116631833A CN 116631833 A CN116631833 A CN 116631833A CN 202310817055 A CN202310817055 A CN 202310817055A CN 116631833 A CN116631833 A CN 116631833A
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 240
- 238000002513 implantation Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims description 66
- 230000005405 multipole Effects 0.000 claims description 37
- 238000000926 separation method Methods 0.000 claims description 24
- 230000009471 action Effects 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an ion implanter capable of customizing a selected area and a method thereof, comprising an ion beam generating component, an ion beam guiding component, an ion beam converging component, an ion beam dispersing component and an ion beam selected area component; the ion beam generating assembly is used for generating a ribbon ion beam; the ion beam guiding component is used for changing the direction of the ion beam; the ion beam converging assembly is used for dividing the ion beam into a plurality of independent small areas; the converged ion beams form parallel ribbon ion beams after passing through an ion beam dispersing assembly; the input end of the ion beam selective area component is arranged towards the ion beam dispersing component, the output end of the ion beam selective area component is arranged towards the substrate, and the parallel ribbon ion beam passes through the ion beam selective area component to form a patterned ion beam. The invention provides an ion beam selective area assembly, which comprises a mask plate, wherein the mask plate comprises a plate body and a convex block arranged on the plate body, and a band-shaped ion beam forms a patterned ion beam after passing through the mask plate so as to realize the patterned selective implantation of a wafer.
Description
Technical Field
The invention relates to the field of ion implanters, in particular to an ion implanter capable of customizing a selected area and a method thereof.
Background
In the field of manufacturing large-scale integrated circuits of semiconductors, ion implantation doping of wafers by ion implanters has found wide application.
In the prior art, the application number is: the chinese patent document of CN202210341801.9 discloses a wide-band beam ion implanter with adjustable width, which comprises an ion beam generating assembly, an ion beam guiding assembly, an ion beam converging assembly, an ion beam dispersing assembly and an ion beam adjusting assembly, wherein the ion beam generating assembly generates a ribbon ion beam, the ion beam guiding assembly is matched with the ion beam generating assembly, the ion beam generated by the ion beam generating assembly is analyzed by the ion beam guiding assembly, the ion beam converging assembly is matched with the ion beam guiding assembly, the analyzed ion beam is converged by the ion beam converging assembly in a zoned manner to form a plurality of mutually separated ion beams, the ion beam dispersing assembly is matched with the ion beam converging assembly, the ion beams converged by the ion beam dispersing assembly are mutually overlapped, the ion beam adjusting assembly is matched with the ion beam dispersing assembly, the ion beam diverged by the ion beam adjusting assembly is adjusted to form a parallel ion beam, and the width of the ion beam is adjusted by the ion beam adjusting assembly, so as to improve the ion implantation efficiency.
From the foregoing, the conventional ion implanter has the following drawbacks: in the preparation process, ion implantation doping is not performed on all areas of the wafer, for this purpose, photolithography treatment is generally performed on the surface of the wafer, thick silicon oxide is used as a barrier layer of the undoped area, and a chemical etching method is required to remove the silicon oxide layer after ion implantation.
Although the above approach may enable selective implantation of the wafer, the cost of ion implantation is increased due to the need for photolithography and chemical etching processes. Therefore, there is a need for an improvement in such a structure to overcome the above-mentioned drawbacks.
Disclosure of Invention
The invention aims to provide an ion implanter capable of customizing a selected area and a method thereof, which are used for solving the problems that the existing implanter cannot implant specific selected areas and the ion implantation cost is increased.
The technical aim of the invention is realized by the following technical scheme:
an ion implanter capable of customizing a selected area comprises an ion beam generating component, an ion beam guiding component, an ion beam converging component, an ion beam dispersing component and an ion beam selected area component;
the ion beam generating assembly is used for generating a ribbon ion beam, and the output end of the ion beam generating assembly is arranged towards the ion beam guiding assembly;
the ion beam guiding components are arranged at two sides of the ribbon ion beam emitted by the ion beam generating component and are used for changing the direction of the ion beam;
the ion beam converging assembly is positioned above the ion beam guiding assembly, the output end of the ion beam converging assembly is arranged towards the ion beam diverging assembly, and the ion beam converging assembly is used for dividing the ion beam into a plurality of independent small areas;
the input end of the ion beam dispersing component faces the ion beam converging component, the output end of the ion beam converging component faces the ion beam selecting component, and the converged ion beam forms a parallel ribbon ion beam after passing through the ion beam dispersing component;
the input end of the ion beam selective area component is arranged towards the ion beam dispersing component, the output end of the ion beam selective area component is arranged towards the substrate, and the parallel ribbon ion beam passes through the ion beam selective area component to form a patterned ion beam;
the ion beam selective assembly comprises a mask plate, wherein the mask plate comprises a plate body and a convex block arranged on the plate body, and the band-shaped ion beam forms a patterned ion beam after passing through the mask plate.
The invention is further provided with: the mask plate is a member made of thermoplastic PC plastic.
The invention is further provided with: the ion beam generating assembly includes an ion source having an output end directed toward the ion beam directing assembly for generating a ribbon ion beam.
The invention is further provided with: the ion beam guide assembly comprises two symmetrically arranged fan-shaped magnets, the fan-shaped magnets are positioned on two sides of the ion beam, and when the ion beam passes through a gap between the fan-shaped magnets, ions are affected by a magnetic field to bend and move towards the ion beam converging assembly.
The invention is further provided with: the ion beam converging assembly comprises a plurality of spiral pipes which are regularly arranged, the plurality of spiral pipes are connected in series and are electrically connected with an external power supply, a magnetic field is generated after the spiral pipes are electrified, and the ion beam is divided into a plurality of small areas through the action of magnetic focusing after passing through the magnetic field.
The invention is further provided with: the ion beam dispersing assembly comprises a multipole lens and a separation slit which are sequentially arranged, wherein the input ends of the multipole lens are arranged towards the spiral pipe, the converging point of ions passing through the spiral pipe is positioned at the center of a circle of the multipole lens supporting cylinder, and the output end of the multipole lens is arranged towards the separation slit;
the multipole lens comprises a supporting cylinder and electromagnets, wherein a plurality of electromagnets are symmetrically arranged and distributed on the inner wall of the supporting cylinder, the electromagnets are electrically connected with an external power supply through wires, and the electromagnets are used for adjusting the current density of an ion beam in the width direction.
The invention is further provided with: the input end of the separation slit is arranged towards the multipole lens, the output end of the separation slit is arranged towards the ion beam selection area component, a separation channel for ions to pass through is arranged on the separation slit, and the ions form parallel ribbon ion beams after passing through the separation channel.
The invention is further provided with: the ion implanter further comprises an ion beam measuring assembly, the ion beam measuring assembly comprises a control module, a metering module and a Faraday cup, the control module is electrically connected with an external power supply through a wire, the Faraday cup is electrically connected with the metering module, and the metering module is electrically connected with the control module.
The invention is further provided with: the multipole lens and the spiral tube are identical in number and correspond to each other one by one.
The application method of the ion implanter capable of customizing the selected area comprises the following steps:
step one: starting an ion source, wherein the ion source generates a strip ion beam, and the ion beam moves towards the fan-shaped magnet;
step two: when passing through the gaps between the sector magnets, the ions are influenced by a magnetic field, the motion track is bent, the ions with different masses have different bending radiuses, and the ions of the required types move towards the spiral tube after passing through the magnetic field by controlling the magnetic field;
step three: the ions pass through a plurality of spiral pipes, the spiral pipes are in an electrified state, and under the action of magnetic focusing, the ion beams are divided into a plurality of independent small areas and then move towards the circle center position of the multipole lens supporting cylinder;
step four: the ion beam passes through the multipole lens, the current density of the ion beam in the width direction is adjusted, and after passing through the multipole lens, the ion beam forms an expansion angle of 6-30 degrees and then moves towards the separation slit;
step five: ions exiting the multipole lens pass through the separation slit to form a parallel ribbon ion beam, and the ribbon ion beam passes through a mask plate to form a patterned ion beam, so that the patterned selection implantation of the wafer can be realized.
In summary, the invention has the following beneficial effects:
the ion beam selecting assembly comprises a mask plate, wherein the mask plate comprises a plate body and a convex block arranged on the plate body, and the band-shaped ion beam forms a patterned ion beam after passing through the mask plate so as to realize the patterned selection and implantation of a wafer; the mask plate is prepared by adopting printing equipment, different mask plates can be printed according to different ion implantation areas, the process of selecting area ion implantation of a wafer is simplified, the selecting area pattern can be customized, and the diversity of ion implantation is increased; compared with the traditional method of adopting silicon oxide as an undoped region blocking layer, the method has lower cost.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic structural view of the mask plate of the present invention.
Fig. 3 is a schematic view of the structure of the multipole lens of the present invention.
Number labels: plate 1, bump 2, ion source 3, sector magnet 4, spiral tube 5, support tube 6, electromagnet 7, separating slit 8 and external power supply 9
Detailed Description
In order that the manner in which the above-recited features, advantages, objects and advantages of the invention are obtained, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
As shown in fig. 1 to 3, the present invention provides an ion implanter capable of customizing a selected area, which comprises an ion beam generating component, an ion beam guiding component, an ion beam converging component, an ion beam dispersing component and an ion beam selecting area component;
the ion beam generating assembly is used for generating a ribbon ion beam, and the output end of the ion beam generating assembly is arranged towards the ion beam guiding assembly;
the ion beam guide components are arranged at two sides of the ribbon ion beam emitted by the ion beam generating component, and are used for analyzing the ribbon ion beam and detecting the intensity of the ion beam;
the ion beam converging assembly is positioned above the ion beam guiding assembly, the output end of the ion beam converging assembly is arranged towards the ion beam dispersing assembly, the ion beam converging assembly is used for generating a magnetic field, ions are affected by the magnetic field to be bent, the bending radiuses of the ions with different masses are different, and ions of a required kind are enabled to move upwards through the ion beam converging assembly after passing through the magnetic field by controlling the strength of the magnetic field, so that the ions are converged into a plurality of ion beams and move towards the ion beam dispersing assembly;
the input end of the ion beam divergence assembly is arranged towards the ion beam convergence assembly, the output end of the ion beam convergence assembly is arranged towards the ion beam selection area assembly, and after passing through the ion beam divergence assembly, the converged ion beam forms a parallel ribbon ion beam and moves towards the ion beam selection area assembly;
the input end of the ion beam selective area component faces the ion beam dispersing component, the output end of the ion beam selective area component faces the substrate, and the parallel ribbon ion beam passes through the ion beam selective area component to form a patterned ion beam, so that the patterned selective implantation of the wafer can be realized, and the cost of ion implantation is reduced;
in this embodiment, the ion beam selective area assembly includes a mask plate, the mask plate includes a plate body 1 and a bump 2 disposed on the plate body, one surface of the mask plate provided with the bump 2 is an a surface, the height of the bump 2 is between 100 μm and 1mm, and in order to ensure that the mask plate pattern corresponds to the wafer pattern, the size of the mask plate needs to be consistent with the wafer size, and a short positioning edge of the wafer is used as an alignment mark. The ribbon ion beam forms a patterned ion beam after passing through the mask plate, so that the patterning selection implantation of the wafer can be realized.
It should be noted that the size and shape of the bump 2 can be customized according to the selected area of the wafer, and the size and shape in the drawings are only for convenience of explanation, and should not be construed as limiting the invention.
In the embodiment, the mask plate is a member made of high-temperature resistant materials, for example, thermoplastic PC plastic is adopted, so that the mask plate has the characteristics of high temperature resistance and impact resistance, the mask plate is prepared by 3D printing equipment, different mask plates can be printed according to different ion implantation areas, the process of selecting area ion implantation of a wafer is simplified, the selecting area pattern can be customized, and the diversity of ion implantation is increased; compared with the traditional method of adopting silicon oxide as an undoped region blocking layer, the method has lower cost.
In this embodiment, the ion beam generating assembly comprises an ion source 3, the output of the ion source 3 being directed towards the ion beam directing assembly, the ion source 3 being arranged to generate a ribbon-shaped ion beam and to pass through the ion beam directing assembly.
In this embodiment, the ion beam guiding assembly includes two symmetrically arranged sector magnets 4, the sector magnets 4 are located at two sides of the ion beam, and when the ion beam passes through the gap between the sector magnets 4, ions are bent under the influence of the magnetic field and move towards the ion beam converging assembly.
In this embodiment, the ion beam converging assembly includes a plurality of spiral tubes 5 arranged regularly, the plurality of spiral tubes 5 are connected in series and electrically connected with an external power supply 9 through wires, a magnetic field is generated after the spiral tubes 5 are electrified, and the ion beam is divided into a plurality of small areas through the action of magnetic focusing after passing through the magnetic field, so that more accurate adjustment is conveniently performed on the ion beam.
In this embodiment, the ion beam dispersing assembly includes multipole lenses and separating slits 8 sequentially arranged, wherein the number of multipole lenses is three, the number of the multipole lenses is consistent with that of the spiral tubes 5, the input end of each multipole lens is arranged towards the spiral tube 5, the convergence point of ions passing through the spiral tube 5 is positioned at the center of the multipole lens supporting cylinder 6, the output end of the multipole lens is arranged towards the separating slits 8, the multipole lens includes a supporting cylinder 6 and electromagnets 7, the electromagnets 7 are symmetrically arranged and distributed on the inner wall of the supporting cylinder 6, the electromagnets 7 are electrically connected with an external power supply 9 through wires, and the electromagnets 7 are used for adjusting the current density of the ion beam in the width direction;
the input end of the separation slit 8 is arranged towards the multipole lens, the output end of the separation slit 8 is arranged towards the ion beam selection area component, a separation channel for ions to pass through is arranged on the separation slit 8, the ions form parallel ribbon-shaped ion beams after passing through the separation channel and move towards the mask plate, the ion beams form patterned ion beams after passing through the mask plate, and the patterned ion beams are arranged on the substrate positioned behind the mask plate.
In this embodiment, the ion implanter further includes an ion beam measurement assembly, the ion beam measurement assembly includes a control module, a metering module, and a faraday cup, wherein the control module is electrically connected with the external power supply 9 through a wire, the faraday cup is electrically connected with the metering module, and the metering module is electrically connected with the control module; before ion implantation, the substrate width and current density are input into a register of a control module, then equipment is started, ions in different areas are measured through a Faraday cup and fed back to a measuring module, and the measuring module fits the width and current density distribution of an ion beam according to the obtained data. If the current density distribution is different from the preset value, the control module adjusts the current density to reach the preset value by adjusting the corresponding multipole lens power supply of the current density distribution abnormal region.
The application process and principle of the invention are as follows: when the ion source 3 is started to generate a ribbon ion beam, ions are bent under the influence of a magnetic field when passing through the sector magnet 4, the ions with different masses have different bending radiuses, and the magnetic field is controlled to enable the ions of the required types to move upwards after passing through the magnetic field. Then the ions pass through a plurality of spiral pipes 5 which are regularly arranged, the spiral is electrified, and under the action of magnetic focusing, the ion beam is divided into a plurality of small areas, so that the ion beam can be conveniently and accurately adjusted later. Thereafter, the ion beam passes through the multipole lens, the current density of the ion beam in the width direction is adjusted, and after passing through the multipole lens, the ion beam forms an expansion angle of 6-30 degrees. Each spiral tube 5 corresponds to a multipole lens, and the converging point of ions after exiting from the spiral tube 5 is positioned at the center of the multipole lens supporting cylinder 6; ions exiting the multipole lens pass through the separation slit 8 to form a parallel ribbon ion beam, and the ribbon ion beam passes through a mask plate to form a patterned ion beam, so that the patterned selective implantation of the wafer can be realized.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "upper", "lower", "inner", "outer", "left", "right", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in place when the inventive product is used, or are directions or positional relationships conventionally understood by those skilled in the art, are merely for convenience of describing the present invention and for simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance. In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, terms such as "disposed," "connected," and the like are to be construed broadly, and for example, "connected" may be either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. In this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a list of elements is included, and may include other elements not expressly listed.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. An ion implanter capable of customizing a selected area is characterized by comprising an ion beam generating component, an ion beam guiding component, an ion beam converging component, an ion beam dispersing component and an ion beam selected area component;
the ion beam generating assembly is used for generating a ribbon ion beam, and the output end of the ion beam generating assembly is arranged towards the ion beam guiding assembly;
the ion beam guiding components are arranged at two sides of the ribbon ion beam emitted by the ion beam generating component and are used for changing the direction of the ion beam;
the ion beam converging assembly is positioned above the ion beam guiding assembly, the output end of the ion beam converging assembly is arranged towards the ion beam diverging assembly, and the ion beam converging assembly is used for dividing the ion beam into a plurality of independent small areas;
the input end of the ion beam dispersing component faces the ion beam converging component, the output end of the ion beam converging component faces the ion beam selecting component, and the converged ion beam forms a parallel ribbon ion beam after passing through the ion beam dispersing component;
the input end of the ion beam selective area component is arranged towards the ion beam dispersing component, the output end of the ion beam selective area component is arranged towards the substrate, and the parallel ribbon ion beam passes through the ion beam selective area component to form a patterned ion beam;
the ion beam selective assembly comprises a mask plate, wherein the mask plate comprises a plate body and a convex block arranged on the plate body, and the band-shaped ion beam forms a patterned ion beam after passing through the mask plate.
2. The ion implanter of claim 1, wherein the mask is a member made of thermoplastic PC plastic.
3. The ion implanter of claim 1, wherein the ion beam generating assembly comprises an ion source having an output end directed toward an ion beam directing assembly, the ion source configured to generate a ribbon ion beam.
4. The ion implanter of claim 1, wherein the ion beam guide assembly comprises two symmetrically disposed fan magnets positioned on opposite sides of the ion beam, wherein ions are deflected by the magnetic field and move toward the ion beam convergence assembly as the ion beam passes through the gap between the fan magnets.
5. The ion implanter of claim 1, wherein the ion beam convergence assembly comprises a plurality of regularly arranged coils, wherein a plurality of coils are connected in series and electrically connected to an external power source, wherein the coils generate a magnetic field after being energized, and the ion beam is divided into a plurality of small regions by magnetic focusing after passing through the magnetic field.
6. The ion implanter of claim 1, wherein the ion beam dispersing assembly comprises a multipole lens and a separation slit, which are sequentially arranged, wherein the input ends of the multipole lens are arranged towards the spiral tube, the convergence point of ions passing through the spiral tube is positioned at the center of the multipole lens supporting cylinder, and the output end of the multipole lens is arranged towards the separation slit;
the multipole lens comprises a supporting cylinder and electromagnets, wherein a plurality of electromagnets are symmetrically arranged and distributed on the inner wall of the supporting cylinder, the electromagnets are electrically connected with an external power supply through wires, and the electromagnets are used for adjusting the current density of an ion beam in the width direction.
7. The ion implanter of claim 6, wherein the input end of the separation slit is disposed toward the multipole lens, the output end of the separation slit is disposed toward the ion beam selection module, the separation slit is provided with a separation channel for allowing ions to pass through, and the ions form a parallel ribbon ion beam after passing through the separation channel.
8. The ion implanter of claim 1, further comprising an ion beam measurement assembly comprising a control module, a metrology module, and a faraday cup, wherein the control module is electrically connected to an external power source via a wire, the faraday cup is electrically connected to the metrology module, and the metrology module is electrically connected to the control module.
9. The ion implanter according to claim 6, wherein the multipole lens and the spiral tube are identical in number and correspond one to one.
10. The method of claim 1, comprising the steps of:
step one: starting an ion source, wherein the ion source generates a strip ion beam, and the ion beam moves towards the fan-shaped magnet;
step two: when passing through the gaps between the sector magnets, the ions are influenced by a magnetic field, the motion track is bent, the ions with different masses have different bending radiuses, and the ions of the required types move towards the spiral tube after passing through the magnetic field by controlling the magnetic field;
step three: the ions pass through a plurality of spiral pipes, the spiral pipes are in an electrified state, and under the action of magnetic focusing, the ion beams are divided into a plurality of independent small areas and then move towards the circle center position of the multipole lens supporting cylinder;
step four: the ion beam passes through the multipole lens, the current density of the ion beam in the width direction is adjusted, and after passing through the multipole lens, the ion beam forms an expansion angle of 6-30 degrees and then moves towards the separation slit;
step five: ions exiting the multipole lens pass through the separation slit to form a parallel ribbon ion beam, and the ribbon ion beam passes through a mask plate to form a patterned ion beam, so that the patterned selection implantation of the wafer can be realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310817055.0A CN116631833A (en) | 2023-07-05 | 2023-07-05 | Ion implanter capable of customizing selected area and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310817055.0A CN116631833A (en) | 2023-07-05 | 2023-07-05 | Ion implanter capable of customizing selected area and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116631833A true CN116631833A (en) | 2023-08-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310817055.0A Pending CN116631833A (en) | 2023-07-05 | 2023-07-05 | Ion implanter capable of customizing selected area and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116631833A (en) |
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2023
- 2023-07-05 CN CN202310817055.0A patent/CN116631833A/en active Pending
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