CN116631831A - Magneto-electric composite scanning deflection focusing system, method and scanning electron microscope - Google Patents
Magneto-electric composite scanning deflection focusing system, method and scanning electron microscope Download PDFInfo
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- CN116631831A CN116631831A CN202310893967.6A CN202310893967A CN116631831A CN 116631831 A CN116631831 A CN 116631831A CN 202310893967 A CN202310893967 A CN 202310893967A CN 116631831 A CN116631831 A CN 116631831A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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Abstract
The invention relates to a magneto-electric composite scanning deflection focusing system, a method and a scanning electron microscope. The system includes; the focusing assembly comprises a first objective lens and a second objective lens; the deflection assembly comprises an electromagnetic deflection piece and a first electrostatic deflection piece, the electromagnetic deflection piece is positioned in a central hole of the second objective lens, is lower than a pole shoe opening of the first objective lens and is higher than the pole shoe opening of the second objective lens, the first electrostatic deflection piece is positioned at the pole shoe opening of the second objective lens, and the first objective lens, the second objective lens, the electromagnetic deflection piece and the first electrostatic deflection piece are coaxially arranged along a main shaft of an incident electron beam; the control component is used for regulating and controlling an excitation signal of the electromagnetic deflection piece to perform scanning deflection of a first field range; or adjusting and controlling the excitation signal of the first electrostatic deflection piece to scan and deflect in a second field range; the maximum field of view corresponding to the first field of view range is greater than the maximum field of view corresponding to the second field of view range. The system can be compatible with large-view-field scanning and high-speed high-resolution imaging, and is suitable for different use scene requirements.
Description
Technical Field
The invention relates to the technical field of scanning electron microscopes, in particular to a magnetoelectric compound scanning deflection focusing system and method and a scanning electron microscope.
Background
Scanning electron microscopes (scanning electron microscopes) are high-end electron optical instruments that utilize a focused, high-energy incident electron beam to scan an bombarded sample, excite various physical information through interactions between the incident electron beam and the substance, and collect, amplify, and re-image the information for the purpose of characterizing the microscopic morphology of the substance, and therefore, scanning electron microscopes are also known as "microcomputers".
At present, scanning electron microscopes used in scientific research and industrial departments in China are seriously dependent on import. The scanning deflection system in the prior art scanning electron microscope generally adopts a pure electrostatic deflection system or a pure electromagnetic deflection system. The pure electrostatic deflection system can realize higher scanning speed and better image quality in a high-resolution mode, but has the defects that the scanning with a larger field of view is difficult to realize, and meanwhile, the pure electrostatic deflection system is very sensitive to indexes such as circuit ripple waves and the like and has poorer anti-interference capability; the pure electromagnetic deflection system has strong deflection capability, can realize the scanning of a larger field of view, has strong anti-interference capability, has the defects of lower scanning speed and incapability of realizing high-speed scanning, and meanwhile, because of the limitation of the manufacturing precision of the scanning deflection system, the deflection field of the pure electromagnetic deflection system is not uniform relative to the deflection field of the pure electrostatic deflection system, and can possibly introduce additional aberration.
However, in some cases, a scanning electron microscope is required to meet the requirements of both large-field scanning and high-speed high-resolution imaging, and therefore, the present inventors have provided a magneto-electric composite scanning deflection focusing system, method and scanning electron microscope through forward research and development.
Disclosure of Invention
In order to solve the technical problem that a scanning electron microscope in the prior art is difficult to be compatible with large-field scanning and high-speed high-resolution imaging, the application provides a magneto-electric composite scanning deflection focusing system, a magneto-electric composite scanning deflection focusing method and a scanning electron microscope.
In a first aspect, the present application provides a magneto-electric composite scanning deflection focusing system comprising:
a focusing assembly including a first objective lens and a second objective lens;
the deflection assembly comprises an electromagnetic deflection piece and a first electrostatic deflection piece, the electromagnetic deflection piece is positioned in the central hole of the second objective lens, is lower than the pole shoe port of the first objective lens and is higher than the pole shoe port of the second objective lens, the first electrostatic deflection piece is positioned at the pole shoe port of the second objective lens, and the first objective lens, the second objective lens, the electromagnetic deflection piece and the first electrostatic deflection piece are all coaxially arranged along the main axis of the incident electron beam;
The control component is used for regulating and controlling an excitation signal of the electromagnetic deflection piece so as to enable the incident electron beam to converge through the first objective lens, form mirror back single deflection through the deflection of the electromagnetic deflection piece, and scan and deflect in a first field range when acting on a sample to be detected; or adjusting and controlling the excitation signal of the first electrostatic deflection piece so as to enable the incident electron beam to be converged by the second objective lens, forming in-lens single deflection by deflection of the first electrostatic deflection piece, and performing scanning deflection in a second field range when acting on a sample to be detected; the maximum field of view corresponding to the first field of view range is greater than the maximum field of view corresponding to the second field of view range.
Optionally, the minimum field of view corresponding to the first field of view range is smaller than the maximum field of view corresponding to the second field of view range.
Optionally, the first objective lens is located above the second objective lens.
Optionally, the first objective lens is disposed within a central aperture of the second objective lens.
Optionally, the deflection assembly further comprises a second electrostatic deflector; the second electrostatic deflector is positioned in the central hole of the second objective lens, is higher than the electromagnetic deflector and is lower than the first objective lens;
The control component is also used for regulating and controlling excitation signals of the second electrostatic deflection piece and the second electrostatic deflection piece so as to enable the incident electron beam to be converged through the second objective lens, and the incident electron beam is deflected through the first electrostatic deflection piece and the second electrostatic deflection piece to form double deflection in front of the lens and double deflection in the lens, and acts on the surface of a sample to be detected to perform scanning deflection in a third view field range;
the minimum view field corresponding to the first view field range is smaller than the maximum view field corresponding to the third view field range, and the minimum view field corresponding to the third view field range is smaller than the maximum view field corresponding to the second view field range.
Optionally, the focusing assembly further comprises a condenser;
the condenser lens is arranged above the first objective lens.
In a second aspect, the present invention also provides a control method of a magnetoelectric compound scanning deflection focusing system, which is applicable to the magnetoelectric compound scanning deflection focusing system according to any one of the first aspects, and the control method includes:
regulating and controlling an excitation signal of the electromagnetic deflection piece based on a control instruction so as to enable the incident electron beam to converge through the first objective lens, deflect through the electromagnetic deflection piece to form a single deflection after the lens, and act on the surface of the sample to be detected to perform scanning deflection within the first field of view range;
Or adjusting and controlling the excitation signal of the first electrostatic deflection piece based on the control instruction so as to enable the incident electron beam to converge through the second objective lens, deflection is carried out through the first electrostatic deflection piece to form in-lens single deflection, and the second field-of-view range scanning deflection is carried out by acting on the surface of the sample to be detected.
Optionally, the deflection assembly of the magnetoelectric compound scanning deflection focusing system further comprises a second electrostatic deflection element; the second electrostatic deflector is positioned in the central hole of the second objective lens, is higher than the electromagnetic deflector and is lower than the first objective lens;
the control method further includes:
regulating and controlling excitation signals of the first electrostatic deflection piece and the second electrostatic deflection piece based on the control instruction so as to enable the incident electron beam to be converged through the second objective lens, forming double deflection in front of the lens through deflection of the first electrostatic deflection piece and the second electrostatic deflection piece, and enabling the double deflection in front of the lens to act on the surface of the sample to be detected to perform scanning deflection within the third view field range;
the minimum view field corresponding to the first view field range is smaller than the maximum view field corresponding to the third view field range, and the minimum view field corresponding to the third view field range is smaller than the maximum view field corresponding to the second view field range.
Optionally, the control method further includes:
based on the control instruction, regulating and controlling an excitation signal of the electromagnetic deflection piece, determining that a first view field range reaches a first threshold value, closing the electromagnetic deflection piece and the first objective lens, providing an excitation signal of a view field corresponding to the first threshold value for the second electrostatic deflection piece, and performing deflection scanning in a third view field range;
determining that the third view field range reaches a second threshold value, closing the second electrostatic deflection piece, providing an excitation signal of the view field corresponding to the second threshold value for the first electrostatic deflection piece, and performing deflection scanning in the second view field;
wherein the first threshold is located in an overlapping region of the first field of view range and the third field of view range, and the second threshold is located in an overlapping region of the third field of view range and the second field of view range.
In a third aspect, the present invention also provides a scanning electron microscope, comprising the magnetoelectric compound scanning deflection focusing system according to any one of the first aspects, further comprising an electron optical column, an electron source and a sample stage; the focusing assembly and the deflection assembly are fixed on the cylinder wall of the electron optical lens cone through corresponding mounting pieces; the electron source is arranged at the top of the electron optical lens cone and used for emitting the incident electron beam, and the sample stage is arranged below the objective lens and used for placing the sample to be measured;
The sample bench is provided with a plurality of nail tables for placing different samples to be tested, and the bottom of the sample bench is provided with a high-precision five-axis mechanism for driving the sample bench to move within a preset distance range under any five-axis coordinate system.
The invention provides a scanning electron microscope, a magnetoelectric compound scanning deflection focusing system and a control method thereof. Compared with the existing scanning deflection focusing system, the magnetoelectric composite scanning deflection focusing system provided by the invention can be used for scanning and detecting the sample to be detected under the condition that the electromagnetic deflection piece and the first objective lens are in a larger first view field range when the surface of the sample to be detected is required to be observed in a large range, and can be used for scanning and detecting the sample to be detected by using the first electrostatic deflection piece and the second objective lens when the surface of the sample to be detected is required to be observed in a high precision, so that a scanning image with higher resolution is obtained. When the magnetoelectric composite scanning deflection focusing system adopts an electrostatic deflection assembly, the magnetoelectric composite scanning deflection focusing system can realize higher scanning speed and better image quality in a high-resolution mode; when the electromagnetic deflection piece is adopted by the magnetoelectric composite scanning deflection focusing system, the deflection capacity is strong, the scanning with a larger field of view can be realized, and the anti-interference capacity is strong. The invention can carry out scanning detection with different fields of view, different resolutions and different scanning speeds based on different deflection pieces and objective lenses, fully utilizes the advantages of the two deflection types, makes up the defects of the two deflection types, is compatible with large-field scanning and high-speed high-resolution imaging by a magnetoelectric composite deflection mode, and can meet different using fields Jing Xuqiu
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to a person skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic diagram of a magneto-electric composite scanning deflection focusing system according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a magneto-electric composite scanning deflection focusing system according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an electrostatic deflector according to an embodiment of the present invention;
FIG. 4 is a schematic structural view of an electromagnetic deflector according to an embodiment of the present invention;
fig. 5 is a schematic diagram of an application scenario of a magnetoelectric composite scanning deflection focusing system according to an embodiment of the present invention;
fig. 6 is a schematic diagram of an application scenario of another magnetoelectric composite scanning deflection focusing system according to an embodiment of the present invention;
Fig. 7 is a schematic diagram of an application scenario of a magneto-electric composite scanning deflection focusing system according to an embodiment of the present invention;
fig. 8 is a view field area schematic diagram according to an embodiment of the present invention.
Reference numerals
10. Incident electron beams; 11. a focusing assembly; 12. a deflection assembly; 13. a sample to be tested; 14. an electron source; 111. a first objective lens; 112. a second objective lens; 113. a condenser; 121. an electromagnetic deflector; 122. a first electrostatic deflector; 123. and a second electrostatic deflector.
Detailed Description
In order that the above objects, features and advantages of the invention will be more clearly understood, a further description of the invention will be made. It should be noted that, without conflict, the embodiments of the present invention and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the invention.
The magneto-electric composite scanning deflection focusing system, the magneto-electric composite scanning deflection focusing method and the magneto-electric composite scanning deflection focusing scanning electron microscope provided by the embodiment of the invention are exemplified below with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a magneto-electric composite scanning deflection focusing system according to an embodiment of the present invention; the device comprises: a focusing assembly 11 including a first objective lens 111 and a second objective lens 112; the deflection assembly 12 comprises an electromagnetic deflection member 121 and a first electrostatic deflection member 122, wherein the electromagnetic deflection member 121 is positioned in the central hole of the second objective lens 112, is lower than the pole shoe port of the first objective lens 111 and is higher than the pole shoe port of the second objective lens 112, the first electrostatic deflection member 122 is positioned at the pole shoe port of the second objective lens 112, and the first objective lens 111, the second objective lens 112, the electromagnetic deflection member and the first electrostatic deflection member are all coaxially arranged along the main axis of the incident electron beam. The first objective lens 111 and the second objective lens 112 may each be an electrostatic lens or an electromagnetic lens, and are not limited herein. In some embodiments, the first objective lens 111 and the second objective lens 112 may be non-immersion lenses, semi-immersion lenses, or full-immersion lenses, which are not limited herein.
The control component is used for regulating and controlling an excitation signal of the electromagnetic deflection piece 121 so as to enable incident electron beams to converge through the first objective lens 111, form mirror back single deflection through the deflection of the electromagnetic deflection piece 121, and perform first field-of-view range scanning deflection when acting on the sample 13 to be detected; or, the excitation signal of the first electrostatic deflector 122 is regulated so as to make the incident electron beam converge through the second objective 112, and the incident electron beam is deflected by the first electrostatic deflector to form single deflection in the lens, and the second field scanning deflection is performed when the incident electron beam acts on the sample 13 to be detected; the maximum field of view corresponding to the first field of view range is greater than the maximum field of view corresponding to the second field of view range.
The control component may be any functional device capable of realizing a control function, such as a controller, etc., and may control the first objective lens 111 and the second objective lens 112 in the focusing assembly 11 and the electromagnetic deflector 121 and the first electrostatic deflector 122 in the deflection assembly 12 based on control instructions sent from the outside, or may automatically control the control component based on some acquired signals, which is not limited herein.
The incident electron beam may be an incident electron beam emitted by the electron source 14 and used for scanning the sample 13 to be measured, and after the incident electron beam acts on the surface of the sample 13 to be measured, back scattered electrons, secondary electrons, auger electrons, characteristic X-rays, continuous X-rays, fluorescent rays and the like may be generated, and the sample 13 to be measured may be detected based on the collected back scattered electrons, secondary electrons and the like, so as to obtain an image of the surface of the sample 13 to be measured (taking the back scattered electrons and the secondary electrons as an example).
In some embodiments, the deflection assembly 12 may include two types of deflection, that is, an electromagnetic deflection element and an electrostatic deflection element, where the magnetoelectric composite scanning deflection focusing system formed by the electrostatic deflection element may achieve a faster scanning speed and better image quality in a high resolution mode, which has the disadvantages that it is difficult to achieve a larger field of view scanning, and is very sensitive to circuit ripple and other indicators, and has poor anti-interference capability; the magnetoelectric composite scanning deflection focusing system formed by the electromagnetic deflection parts has strong deflection capability, can realize scanning with larger field of view and has strong anti-interference capability, and has the defects of lower scanning speed, incapability of realizing high-speed scanning and larger aberration compared with a pure electrostatic deflection system. The application fully utilizes the advantages of the two deflection types, and makes up the defects of the two deflection types, namely, the application is compatible with large-view-field scanning and high-speed high-resolution imaging by a magnetoelectric composite deflection mode, and can meet different use scene requirements.
In some embodiments, the first objective lens 111 may be disposed above the second objective lens 112. That is, the distance between the second objective lens 112 and the sample 13 to be measured may be smaller than the distance between the first objective lens 111 and the sample 13 to be measured, that is, the second objective lens 112 may be closer to the sample 13 to be measured, and the maximum resolution that the second objective lens 112 can achieve may be larger than the maximum resolution that the first objective lens 111 can achieve.
The first objective lens 111 may be used to perform a first field of view range scan in conjunction with the electromagnetic deflector 121, and the second objective lens 112 may be used to perform a second field of view range scan in conjunction with the first electrostatic deflector 122, and in some embodiments, the first objective lens 111 and the second objective lens 112 may be used alternatively.
In some embodiments, the focusing assembly 11 may further include a condenser lens 113, the condenser lens 113 may be disposed above the first objective lens 111, and the condenser lens 113 may be used to primarily converge an incident electron beam.
FIG. 2 is a schematic diagram of a structure of a magneto-electric combined scanning deflection focusing system according to an embodiment of the present invention; in some embodiments, the first objective lens 111 is disposed within a central aperture of the second objective lens 112. Illustratively, the distance between the tip of the first objective lens 111 and the sample 13 to be measured may be smaller than or equal to the distance between the tip of the second objective lens 112 and the sample 13 to be measured; wherein the top end of the first objective lens 111 and/or the second objective lens 112 is the end far away from the sample 13 to be measured. For example, the first objective lens 111 and the second objective lens 112 may be disposed in other types of relative positional relationships, and the first objective lens 111 and the second objective lens 112 may satisfy corresponding convergence requirements if disposed in other relative positions, as shown in fig. 2, and the first objective lens 111 may be disposed inside the second objective lens 112. Based on the above arrangement, on the premise that the first objective lens 111 and the second objective lens 112 can both satisfy the requirements of the corresponding usage scenario, since the first objective lens 111 and the second objective lens 112 occupy less space in the propagation direction of the incident electron beam 10, the condenser lens 113 and the electron source 14 in the above embodiment can be disposed at a position closer to the sample 13 to be measured, thereby reducing the overall volume of the magnetoelectric compound scanning deflection focusing system, and since the distance between the electron source 14 and the sample 13 to be measured is closer, the propagation distance of the incident electron beam 10 is smaller and the loss is smaller, and thus better scanning effect can be obtained.
In some cases, the electrostatic deflector according to the embodiments of the present invention may be composed of a plurality of metal electrodes that are not connected to each other. The electrostatic deflection piece in the embodiment of the invention can be an electrode formed by a plurality of metal sheets which are not connected with each other, and the metal sheets can be beryllium copper, titanium, molybdenum, nonmagnetic stainless steel and the like. The material has the characteristics of high conductivity, good machining performance, suitability for vacuum, no magnetism and stable chemical property. The number of the electrodes of the electrostatic deflector in the embodiment of the invention can beAre even numbered slices greater than 2, e.g., 4, 8, 12, 20 pole deflections. In the embodiment of the invention, the heights of the electrode plates in the electrostatic deflection piece can be equal, the inner surfaces of the electrode plates are distributed on the same cylindrical surface in the space, and the electrode plates can be obtained by adopting a method of cutting the processed cylindrical surface parts. The deflection sensitivity of the electrostatic deflection member is related to the size of the cylindrical surface, and the higher the height of the cylindrical surface is, the smaller the diameter is, the higher the deflection sensitivity is, and the embodiment of the invention can design the size of the electrostatic deflection member according to the required deflection sensitivity. The gap width between the electrode plates in the embodiment of the invention is 0.2-2mm. FIG. 3 is a schematic structural diagram of an electrostatic deflector according to an embodiment of the present invention; the electrostatic deflector may be formed of 12 metal pole pieces 21-32 on the same cylinder that are not connected to each other. The 12 metal pole pieces 21-32 can be divided into 4 groups which are symmetrical in the center, and the inside of the electrostatic deflection piece can generate a satisfactory dipolar electrostatic deflection field by applying proper voltage to the metal pole pieces 21-32. The electromagnetic deflector in the embodiment of the invention can be formed into magnetic poles by a plurality of electromagnetic coils, and the electromagnetic coils are symmetrically distributed in space about a central axis. The number of poles of the electromagnetic deflection may be 4, 8 or 12 poles. The electromagnetic coil can be formed by winding enameled wires. The electromagnetic coil may be wound on a magnetic core made of a soft magnetic material to obtain a stronger magnetic field. The magnetic circuit formed by soft magnetic materials can obtain a magnetic field with higher quality. The electromagnetic deflector in the embodiment of the invention can be one of the following structures: 1. saddle structure: the magnetic field is generated by utilizing a wire group parallel to the shaft, and a loop is formed by utilizing an arc-shaped wire to connect the parallel wire group; the structure can enable the saddle coil to be integrally nested on a cylindrical barrel, and denser coil windings can be realized in the same space range; meanwhile, the cylinder can be made of soft magnetic materials, so that the magnetic field can be effectively increased. 2. The annular structure is as follows: the magnetic field generator is characterized in that four closed rectangular wire loops are symmetrically distributed in four quadrants respectively, and magnetic fields are mainly generated by axial wire groups. 3. Rectangular structure: it may consist of a pair of rectangular wires, some of which are parallel to the axial direction and some of which are perpendicular to the deflection field direction. Whether saddle-shaped coil or ring-shaped Coil, when half angle of coil unitWhen the deflection field is higher order (hexapole field component) of 0, the whole deflection field is relatively close to the pure diode field, so that the uniformity of the deflection field can be ensured in a larger range. FIG. 4 is a schematic view of an electromagnetic deflector according to an embodiment of the present invention; the electromagnetic deflector may be constituted by four sets of axisymmetric coils 33-36 and corresponding bobbins 37-40. By applying a suitable current to the coils 33-36, a satisfactory two-pole electromagnetic deflection field can be generated inside the electromagnetic deflector.
Fig. 5 is a schematic diagram of an application scenario of a magnetoelectric composite scanning deflection focusing system according to an embodiment of the present invention; referring to fig. 5, in some scenarios a user may need to acquire an image of the surface of the sample 13 under test at a larger field of view. In this scenario, the incident electron beam 10 may be emitted from the electron source 14 toward the sample 13 to be measured, the incident electron beam 10 first passes through the condenser 113, is primarily condensed by the condenser 113 to form an approximately parallel or more convergent incident electron beam 10, and then passes through the first objective lens 111 and the electromagnetic deflector 121, respectively, where the control component may control the first objective lens 111 to focus the incident electron beam 10, and regulate and control an excitation signal of the electromagnetic deflector 121 to deflect the incident electron beam 10, so that the incident electron beam 10 bombards the sample 13 to be measured at a target position of the sample 13 to be measured to perform deflection scanning, and at this time, the range where the electromagnetic deflector 121 can act on the surface of the sample 13 to be measured by the incident electron beam 10 may be the first field of view range based on the deflection effect formed by the control component on the incident electron beam 10. In the working mode, the magnetoelectric compound scanning deflection focusing system is equivalent to single deflection after a mirror, the acceptance angle is small, the center of the deflection position is higher, and the maximum imaging field and the maximum depth of field can be realized. The electromagnetic deflection member 121 with a larger distance from the sample 13 to be measured can realize deflection scanning with a larger field of view, and generally does not need higher resolution in the use environment of the first field of view range, so that in the scene, the magnetoelectric compound scanning deflection focusing system provided by the embodiment of the invention can realize scanning with a larger field of view, has stronger anti-interference capability, and meets the use requirement of a user on the large field of view. The larger the excitation signal value applied to the electromagnetic deflector 121, the stronger the deflection capability of the electromagnetic deflector 121, and the larger the scan field of view that can be achieved. In this operation mode, although the second objective lens 112, the first electrostatic deflector 122, and the like are illustrated in fig. 3, they do not function in this operation mode, and they do not affect the incident electron beam 10.
Fig. 6 is a schematic diagram of an application scenario of another magnetoelectric composite scanning deflection focusing system according to an embodiment of the present invention; referring to fig. 6, in some usage scenarios the user may need an image of the surface of the sample 13 to be measured at high resolution, i.e. an image with less stringent requirements for the field of view size, but with higher definition. In this scenario, the incident electron beam 10 may be emitted from the electron source 14 toward the sample 13 to be measured, the incident electron beam 10 first passes through the condenser 113, is primarily condensed by the condenser to form an approximately parallel or more convergent incident electron beam 10, and then passes through the second objective 112 and the first electrostatic deflector 122, respectively, the control component may control the second objective 112 to focus the incident electron beam 10, and regulate an excitation signal of the first electrostatic deflector 122 to deflect the incident electron beam 10, so that the incident electron beam 10 bombards the sample 13 to be measured at a target position of the sample 13 to be measured, and at this time, the range of the incident electron beam 10 that can act on the surface of the sample 13 may be the second field of view range based on the deflection effect of the first electrostatic deflector 122 formed by the control component on the incident electron beam 10. The magneto-electric composite scanning deflection focusing system is equivalent to single deflection in a mirror as a whole. At the moment, the overall resolution of the image is optimal, the imaging speed is fastest, and the imaging field of view is smaller. The first electrostatic deflector 122 with a relatively short distance from the sample 13 to be measured can realize high-resolution deflection scanning, and in the use environment of the second field of view, a relatively large field of view is generally not required, but a high-resolution image is required. The excitation signal applied to the first electrostatic deflector 122 may be a voltage, and the larger the voltage is, the stronger the deflection capability of the first electrostatic deflector 122 is, and the larger the scan field of view can be realized. In some scenarios, the maximum scan field that can be achieved by the deflector may be determined by the distance between the deflector and the sample 13 to be measured, the greater the maximum scan field that can be achieved by the deflector. In some scenarios, the difficulty of implementing the same scan field of view size for an electrostatic deflector is greater than for an electromagnetic deflector; for example, an electrostatic deflector requires a voltage of several hundred volts to achieve a scan field of view on the order of several hundred microns, which places high demands on both the control components of the electrostatic deflector and the processes in the manufacturing process. While electromagnetic deflectors may require currents below 1A in order to achieve the same field of view size, there is a lower manufacturing requirement for the control module and itself. On the other hand, since the deflection sensitivity of the electrostatic deflector is inversely proportional to the acceleration voltage of the incident electron beam (i.e., the voltage of the electron source for emitting the incident electron beam), and the deflection sensitivity of the electromagnetic deflector is inversely proportional to the square root of the acceleration voltage of the incident electron beam, the deflection capability of the electron magnetic deflector is further enhanced when the energy of the incident electron beam is high, and scanning of a larger field of view can be more easily achieved.
Fig. 7 is a schematic diagram of an application scenario of a magneto-electric composite scanning deflection focusing system according to an embodiment of the present invention; referring to both fig. 1 and 7, in some embodiments, the deflection assembly 12 further includes a second electrostatic deflector 123; the second electrostatic deflector 123 is located in the central hole of the second objective lens 112, higher than the electromagnetic deflector 121, and lower than the first objective lens 111; the control component is used for regulating and controlling excitation signals of the first electrostatic deflector 122 and the second electrostatic deflector 123 so as to enable the incident electron beam 10 to converge through the second objective lens 112, and the incident electron beam is deflected by the first electrostatic deflector 122 and the second electrostatic deflector 123 to form double deflection in front of the lens and in the lens, and acts on the surface of the sample 13 to be tested to perform scanning deflection within a third field of view range.
Illustratively, for the acquired scan image, the resolution requirements and field size are matched to the scan image resolution, typically
Wherein, the liquid crystal display device comprises a liquid crystal display device,representing the size of the beam spot, and determining the size by the properties of electron optical elements such as an objective lens, a deflector and the like for representing the resolution; />Representing the size of the field of view, and having a corresponding relation with the magnification M; />The representative image resolution is specified by the designer and is generally 24000 at maximum. The relationship between resolution and magnification needs to satisfy the constraints of the empirical formula. In brief, in some scenes, both a scan image of a certain field of view size is required and a scan image of the current field of view size is required to maintain a certain resolution so that the scan image is sufficiently clear. For some scenes, the magnetoelectric compound scanning deflection focusing system may have a certain aberration due to the deflection of the incident electron beam 10, so that the scanned image is not clear enough. Based on this problem, the embodiment of the present invention can deflect the incident electron beam 10 by the second electrostatic deflector 123, and the compensated deflection of the incident electron beam 10 by the second electrostatic deflector 123 can pass through the center of the second objective lens 112, so that the scanned image is clearer. Specifically, the incident electron beam 10 emitted by the electron source 14 first passes through the preliminary convergence of the condenser 113, and then passes through the second electrostatic deflector 123, the first electrostatic deflector 122 and the second objective lens 112, and after passing through the deflection action of the second electrostatic deflector 123, the incident electron beam 10 can reach a further scanning effect through the center of the second objective lens 112, and the incident electron beam 10 passes through the convergence of the second objective lens 112 and the deflection of the second electrostatic deflector 123, and acts on the surface of the sample 13 to be detected to scan the sample 13, where the scanning range that can be achieved by the incident electron beam 10 is the third field of view range. Wherein, the first The minimum field of view corresponding to the field of view range is smaller than the maximum field of view corresponding to the third field of view range, and the minimum field of view corresponding to the third field of view range is smaller than the maximum field of view corresponding to the second field of view range.
In some embodiments, the minimum field of view corresponding to the first field of view range is less than the maximum field of view corresponding to the second field of view range such that the first field of view range and the second field of view range form an overlap region.
In some embodiments, if embodiments of the present invention are used only to enable scanning of a first field of view range and a second field of view range, then there may be an overlap region of the first field of view range and the second field of view range. If the embodiment of the invention is applied to the first field of view range, the second field of view range and the third field of view range, an overlapping area can exist between the first field of view range and the third field of view range, and an overlapping area can exist between the third field of view range and the second field of view range. Fig. 8 is a schematic view of a field area provided in an embodiment of the present invention, where an overlapping area exists between a first field area and a third field area, and an overlapping area exists between the third field area and a second field area, where an area corresponding to a boundary 82 to a center may be the second field area, an area corresponding to a boundary 81 to a boundary 84 may be the third field area, and an area corresponding to a boundary 83 to a boundary 85 may be the first field area. Under the premise of adopting the scheme, a user can realize the switching from the first view field range to the third view field range to the second view field range, namely, the scanning of the sample 13 to be detected is realized under different view fields, and because different scanning strategies are adopted based on different view fields and different devices are used for scanning, the anti-interference capability is ensured to be stronger when the view field is larger, or the faster scanning speed and the better image quality under the high-resolution mode are realized when the view field is smaller. The magnetoelectric compound scanning deflection focusing system provided by the embodiment of the invention can be applicable to various use scenes.
The embodiment of the invention also provides a control method of the magnetoelectric composite scanning deflection focusing system, which is suitable for any magnetoelectric composite scanning deflection focusing system in the magnetoelectric composite scanning deflection focusing system embodiment, and comprises the following steps:
regulating and controlling an excitation signal of the electromagnetic deflection element 121 based on a control instruction, so that an incident electron beam 10 can be converged through the first objective lens 111, and is subjected to single deflection after being deflected by the electromagnetic deflection element 121 to form a mirror, and acts on the surface of the sample 13 to be tested to perform scanning deflection within a first field of view range;
or, based on the control instruction, the excitation signal of the first electrostatic deflector 122 is regulated so as to enable the incident electron beam 10 to converge through the second objective lens 112, and the incident electron beam is deflected by the first electrostatic deflector 122 to form in-lens single deflection, and acts on the surface of the sample 13 to be detected to perform scanning deflection within a second field of view range.
The control method of the magnetoelectric compound scanning deflection focusing system is applicable to any magnetoelectric compound scanning deflection focusing system in the magnetoelectric compound scanning deflection focusing system embodiment, and substantially includes the technical features of any magnetoelectric compound scanning deflection focusing system in the magnetoelectric compound scanning deflection focusing system embodiment, so that the same or at least similar technical effects as those in the magnetoelectric compound scanning deflection focusing system embodiment can be achieved, and the details are not repeated herein.
In some embodiments, the deflection assembly 12 of the magneto-electric composite scanning deflection focusing system further comprises a second electrostatic deflector 123; the second electrostatic deflector 123 is located in the central hole of the second objective lens 112, higher than the electromagnetic deflector 121, and lower than the first objective lens 111;
the control method further comprises the following steps:
regulating and controlling excitation signals of the first electrostatic deflector 122 and the second electrostatic deflector 123 based on control instructions so as to enable incident electron beams 10 to converge through the second objective lens 112, forming double deflection in front of the lens through the deflection of the first electrostatic deflector 122 and the second electrostatic deflector 123, and enabling the double deflection to act on the surface of the sample 13 to be tested to perform scanning deflection within a third field of view range;
the minimum view field corresponding to the first view field range is smaller than the maximum view field corresponding to the third view field range, and the minimum view field corresponding to the third view field range is smaller than the maximum view field corresponding to the second view field range.
The control method of the magnetoelectric compound scanning deflection focusing system in the above embodiment corresponds to the embodiment corresponding to fig. 7, and has the same technical features as the embodiment corresponding to fig. 7, so that the same or at least similar technical effects as the embodiment corresponding to fig. 7 can be achieved, and the description thereof will not be repeated.
In some embodiments, the control method further comprises:
based on the control instruction, regulating and controlling the excitation signal of the electromagnetic deflection piece, determining that the first view field range reaches a first threshold value, closing the electromagnetic deflection piece and the first objective lens, providing the excitation signal of the view field corresponding to the first threshold value for the first electrostatic deflection piece and the second electrostatic deflection piece, and performing deflection scanning in the third view field range;
determining that the third view field range reaches a second threshold value, closing the second electrostatic deflection piece, providing an excitation signal of the view field corresponding to the second threshold value for the first electrostatic deflection piece, and performing deflection scanning in the second view field;
the first threshold value is located in an overlapping area of the first view field range and the third view field range, and the second threshold value is located in an overlapping area of the third view field range and the second view field range.
Illustratively, for example, a variable voltage (excitation signal) is currently applied to the first electrostatic deflector 122 and the second objective lens 112 is controlled to actuate, with the current field of view being larger as the voltage applied to the first electrostatic deflector 122 is larger. When the current field of view size reaches the first threshold value, no excitation signal may be applied to the first electrostatic deflector 122, and immediately a specific excitation signal is applied to the second electrostatic deflector 123 (or simultaneously to the second electrostatic deflector 123 and the second electrostatic deflector 124), so that the incident electron beam 10 can achieve an image with the same size and the same resolution as the current field of view (or at least close to the first electrostatic deflector 123 and the second electrostatic deflector 124) under the action of the second electrostatic deflector 123 (or the second electrostatic deflector 123 and the second electrostatic deflector 124), and when the excitation signal of the first electrostatic deflector 122 is regulated based on the control instruction to perform the second field of view range deflection scanning, for example, the corresponding field of view range may be the area from 82 to the center of the image in fig. 8, the larger the excitation signal applied to the first electrostatic deflector is, and the maximum field of view range may reach 82 in fig. 8, and when the current field of view reaches the first threshold value, the first threshold value may be the area between 82 and 81, and the first electrostatic deflector 122 and the first field of view range may be simultaneously applied to the first electrostatic deflector 122 in the middle of the field of view, namely the field of view is scanned between 81. In some scenarios, the voltage applied to the first electrostatic deflector 122 may also be used as a target condition for switching the deflectors, for example, when the voltage applied to the first electrostatic deflector 122 reaches a first voltage threshold, the first electrostatic deflector 122 is turned off and a specific excitation signal is immediately applied to the second electrostatic deflector 123 (or simultaneously to the second electrostatic deflector 123, the second electrostatic deflector 124), so that the incident electron beam 10 achieves an image with the same size and resolution (or at least close) as the current field of view under the action of the second electrostatic deflector 123 (or the second electrostatic deflector 123 and the second electrostatic deflector 124).
A field of view larger than the second field of view range may be obtained after applying the excitation signal to the second electrostatic deflector 123 (or the second electrostatic deflector 123, 124), the excitation value of the excitation signal applied to the second electrostatic deflector 123 (or the second electrostatic deflector 123, 124) may be continuously increased, and when the current field of view reaches the second threshold value, the excitation signal may no longer be applied to the second electrostatic deflector 123 (or simultaneously to the second electrostatic deflector 123, 124), the second electrostatic deflector 123 (or simultaneously to the second electrostatic deflector 123, 124) may be controlled to be turned off, the second objective lens 112 may be controlled to be turned off, and a specific excitation signal may be applied to the electromagnetic deflector 121 immediately, and the first objective lens 111 may be controlled to be activated, such that the incident electron beam 10 may achieve an image with the same size and the same (or at least close) as the current field of view under the action of the second electrostatic deflector 123 (or the second electrostatic deflector 123 and the second electrostatic deflector 124) and the first objective lens 111. After which the electromagnetic deflector 121 may continue to be adjusted to achieve a larger field of view. Through the method, the embodiment of the invention can realize the switching among a plurality of view fields, and as images with different view field sizes can be obtained by different control methods, a user can obtain images with a range which is larger than the first view field.
The embodiment of the invention also provides a scanning electron microscope, which comprises the magnetoelectric composite scanning deflection focusing system as any one of the magnetoelectric composite scanning deflection focusing system embodiments, an electron optical lens barrel, an electron source and a sample stage; the focusing assembly and the deflection assembly are fixed on the wall of the electron optical lens cone through corresponding mounting pieces; the electron source is arranged at the top of the electron optical lens cone and used for emitting incident electron beams towards the focusing assembly, the deflection assembly and the sample table; the sample stage is arranged below the objective lens and is used for placing a sample to be measured;
the sample table is provided with a plurality of nail tables for placing different samples to be tested, and the bottom of the sample table is provided with a high-precision five-axis mechanism for driving the sample table to move within a preset distance range under any five-axis coordinate system.
The scanning electron microscope provided by the embodiment of the invention has the technical characteristics in the magnetoelectric compound scanning deflection focusing system in any one of the embodiments of the scanning focusing deflection device, so that the same or at least similar technical effects as those of the embodiments of the scanning focusing deflection device can be realized, and the description thereof is omitted. In addition, the scanning electron microscope provided by the embodiment of the invention can place a sample to be measured through the nail table arranged on the sample table, and the bottom of the sample table is provided with the high-precision five-axis mechanism, so that the sample to be measured fixed on the sample table can also change the position of the sample table through the movement of the sample table, for example, the sample table can move in the range of X axis-65 mm, can move in the range of Y axis-65 mm, can move in the range of Z axis 0-65 mm, can rotate for example by 360 degrees, can swing for example by-10-70 degrees, and the like, wherein the X axis, the Y axis and the Z axis are mutually perpendicular, and the plane formed by the X axis and the Y axis is perpendicular to the optical axis direction of an incident electron beam. From one angle, based on the arrangement, the scanning detection position can be changed by changing the position of the sample to be detected on the premise that the deflection direction of the incident electron beam is unchanged, and the scanning view field range of the scanning electron microscope provided by the embodiment of the invention can be considered to be enlarged.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown and described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The magneto-electric composite scanning deflection focusing system is characterized by comprising:
a focusing assembly including a first objective lens and a second objective lens;
the deflection assembly comprises an electromagnetic deflection piece and a first electrostatic deflection piece, the electromagnetic deflection piece is positioned in the central hole of the second objective lens, is lower than the pole shoe port of the first objective lens and is higher than the pole shoe port of the second objective lens, the first electrostatic deflection piece is positioned at the pole shoe port of the second objective lens, and the first objective lens, the second objective lens, the electromagnetic deflection piece and the first electrostatic deflection piece are all coaxially arranged along the main axis of an incident electron beam;
the control component is used for regulating and controlling an excitation signal of the electromagnetic deflection component so as to enable the incident electron beam to converge through the first objective lens, form mirror back single deflection through the deflection of the electromagnetic deflection component, and scan and deflect in a first field range when acting on a sample to be detected; or adjusting and controlling the excitation signal of the first electrostatic deflection piece so as to enable the incident electron beam to converge through the second objective lens, forming in-lens single deflection through the deflection of the first electrostatic deflection piece, and performing scanning deflection in a second field range when acting on a sample to be detected; the maximum field of view corresponding to the first field of view range is greater than the maximum field of view corresponding to the second field of view range.
2. The magneto-electric composite scanning deflection focusing system of claim 1, wherein a minimum field of view corresponding to the first field of view range is smaller than a maximum field of view corresponding to the second field of view range.
3. The magneto-electric composite scanning deflection focusing system of claim 1, wherein said first objective lens is located above said second objective lens.
4. The magneto-electric composite scanning deflection focusing system according to claim 1, wherein the first objective lens is disposed in a center hole of the second objective lens.
5. The magneto-electric composite scanning deflection focusing system of claim 3 or 4, wherein said deflection assembly further comprises a second electrostatic deflection member; the second electrostatic deflector is positioned in the central hole of the second objective lens, is higher than the electromagnetic deflector and is lower than the first objective lens;
the control component is also used for regulating and controlling excitation signals of the first electrostatic deflection piece and the second electrostatic deflection piece so as to enable the incident electron beam to converge through the second objective lens, deflection of the first electrostatic deflection piece and the second electrostatic deflection piece forms double deflection in front of the lens and in the lens, and the double deflection acts on the surface of a sample to be detected to perform scanning deflection in a third visual field range;
The minimum view field corresponding to the first view field range is smaller than the maximum view field corresponding to the third view field range, and the minimum view field corresponding to the third view field range is smaller than the maximum view field corresponding to the second view field range.
6. The magneto-electric composite scanning deflection focusing system of claim 1, wherein said focusing assembly further comprises a condenser lens;
the condenser lens is arranged above the first objective lens.
7. A control method of a magnetoelectric compound scanning deflection focusing system, characterized in that it is applied to a magnetoelectric compound scanning deflection focusing system according to any one of claims 1 to 6, said control method comprising:
regulating and controlling an excitation signal of the electromagnetic deflection piece based on a control instruction so as to enable the incident electron beam to converge through the first objective lens, forming mirror deflection through the deflection of the electromagnetic deflection piece and then singly deflecting, and acting on the surface of the sample to be detected to perform scanning deflection of the first field of view range;
or adjusting and controlling the excitation signal of the first electrostatic deflection piece based on the control instruction so as to enable the incident electron beam to be converged through the second objective lens, forming in-lens single deflection through the deflection of the first electrostatic deflection piece, and enabling the incident electron beam to act on the surface of the sample to be detected to perform scanning deflection within the second field of view range.
8. The control method of claim 7, wherein the deflection assembly of the magneto-electric composite scanning deflection focusing system further comprises a second electrostatic deflection element; the second electrostatic deflector is positioned in the central hole of the second objective lens, is higher than the electromagnetic deflector and is lower than the first objective lens;
the control method further includes:
regulating and controlling excitation signals of the first electrostatic deflection piece and the second electrostatic deflection piece based on the control instruction so as to enable the incident electron beam to be converged through the second objective lens, forming double deflection in front of the lens through deflection of the first electrostatic deflection piece and the second electrostatic deflection piece, and enabling the incident electron beam to act on the surface of the sample to be detected to perform scanning deflection in a third view field range;
the minimum view field corresponding to the first view field range is smaller than the maximum view field corresponding to the third view field range, and the minimum view field corresponding to the third view field range is smaller than the maximum view field corresponding to the second view field range.
9. The control method according to claim 8, characterized in that the control method further comprises:
based on the control instruction, regulating and controlling the excitation signal of the electromagnetic deflection piece, determining that a first view field range reaches a first threshold value, closing the electromagnetic deflection piece and the first objective lens, providing the excitation signal of a view field corresponding to the first threshold value for the first electrostatic deflection piece and the second electrostatic deflection piece, and performing deflection scanning in a third view field range;
Determining that the third view field range reaches a second threshold value, closing the second electrostatic deflection piece, providing an excitation signal of a view field corresponding to the second threshold value for the first electrostatic deflection piece, and performing deflection scanning in a second view field;
wherein the first threshold is located in an overlapping region of the third field of view range and the first field of view range, and the second threshold is located in an overlapping region of the third field of view range and the second field of view range.
10. A scanning electron microscope, comprising the magnetoelectric compound scanning deflection focusing system according to any one of claims 1 to 6, further comprising an electron optical column, an electron source, and a sample stage; the focusing assembly and the deflection assembly are fixed on the cylinder wall of the electron optical lens cone through corresponding mounting pieces; the electron source is arranged at the top of the electron optical lens cone and used for emitting the incident electron beam, and the sample stage is arranged below the objective lens and used for placing the sample to be measured;
the sample bench is provided with a plurality of nail tables for placing different samples to be tested, and the bottom of the sample bench is provided with a high-precision five-axis mechanism for driving the sample bench to move within a preset distance range under any five-axis coordinate system.
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| JP2003257355A (en) * | 2002-03-04 | 2003-09-12 | Nikon Corp | Scanning electron microscope |
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| CN109300759A (en) * | 2017-11-21 | 2019-02-01 | 聚束科技（北京）有限公司 | Low energy scanning electron microscope system, scanning electron microscope system and sample detection method |
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