CN116626741A - Calibrating device and method for secondary electron yield measurement - Google Patents
Calibrating device and method for secondary electron yield measurement Download PDFInfo
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- CN116626741A CN116626741A CN202310382582.3A CN202310382582A CN116626741A CN 116626741 A CN116626741 A CN 116626741A CN 202310382582 A CN202310382582 A CN 202310382582A CN 116626741 A CN116626741 A CN 116626741A
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- 238000005259 measurement Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000010894 electron beam technology Methods 0.000 claims abstract description 28
- 230000005284 excitation Effects 0.000 claims abstract description 24
- 238000012937 correction Methods 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims 1
- 230000009977 dual effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010963 304 stainless steel Substances 0.000 description 2
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101100116570 Caenorhabditis elegans cup-2 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T7/00—Details of radiation-measuring instruments
- G01T7/005—Details of radiation-measuring instruments calibration techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
Abstract
The invention discloses a device and a method for calibrating secondary electron yield measurement, which relate to secondary electron emission phenomenon and application field thereof; the calibration device comprises: the device comprises an electronic excitation source, a Faraday cup, a collector, a beam measuring instrument and a mobile terminal; the electron excitation source emits electrons; the collector collects secondary electrons generated by the sample to be tested under the irradiation of electrons incident through the electron through hole; when the Faraday cup is positioned below the electronic excitation source and completely covers the electronic through hole, the beam current measuring instrument measures the beam current of the electronic beam transmitted by the Faraday cup and measures the current of secondary electrons and the current passing through the sample to be measured; the mobile terminal obtains secondary electron calibration yield according to the secondary electron yield calculated by the current of the secondary electrons and the current passing through the sample to be detected and the correction coefficient calculated by the current of the secondary electrons and the beam current of the electron beam; the secondary electron yield is calibrated according to the correction coefficient, so that the secondary electron yield is accurately measured.
Description
Technical Field
The present invention relates to secondary electron emission and application thereof, and more particularly to a device and method for calibrating secondary electron yield measurement.
Background
Secondary electron emission occurs in many scenarios, and the secondary electron yield is often used to characterize the intensity of secondary electron emission. In the fields of microscopic analysis, weak signal detection and the like, it is required to increase secondary electron yield so as to improve the performance of related instruments and equipment; in the scenes of spacecrafts, high-voltage transmission engineering equipment, large particle accelerating devices and the like which are operated in a space environment, secondary electron yield needs to be reduced, and adverse effects caused by secondary electrons are reduced. Therefore, research on secondary electron emission phenomena, particularly, secondary electron yield regulation, is necessary.
The key to secondary electron yield regulation research is accurate measurement of secondary electron yield. The current testing methods mainly comprise three types: collector method, sample bias method, charge derivation method. In contrast, the collector method has strong universality, is suitable for measurement of all materials, and meanwhile, the testing process is relatively simple, reliable and high in precision, so that more and more attention and use are paid. However, during use, the effect of the collection efficiency of the collector itself on the final result is often neglected, resulting in inaccuracy of the secondary electron yield measurement. Therefore, it is important how to achieve accurate measurement of secondary electron yield.
Disclosure of Invention
The invention aims to provide a device and a method for calibrating secondary electron yield measurement, which realize accurate measurement of secondary electron yield by calibrating secondary electron yield according to a correction coefficient.
In order to achieve the above object, the present invention provides the following solutions:
a calibration device for secondary electron yield measurement, the calibration device comprising: the device comprises an electronic excitation source, a Faraday cup, a collector, a beam measuring instrument and a mobile terminal;
the Faraday cup is connected with the electronic excitation source;
the collector is an electronic collecting device with a cover-shaped structure provided with an electronic through hole and is covered around the sample to be tested;
the beam measuring instrument is respectively connected with the Faraday cup, the collector, the sample to be measured and the mobile terminal;
the electron excitation source is used for emitting electrons;
the collector is used for collecting secondary electrons generated by the sample to be tested under the irradiation of electrons incident through the electron through hole;
the beam measuring instrument is used for:
measuring the beam current of the electron beam transmitted through the Faraday cup when the Faraday cup is positioned below the electron excitation source and completely shields the electron through holes;
measuring the current of secondary electrons and the current passing through the sample to be measured;
the mobile terminal is used for:
calculating secondary electron yield according to the current of secondary electrons and the current passing through the sample to be detected;
calculating a correction coefficient according to the current of the secondary electrons and the beam current of the electron beam;
and obtaining a secondary electron calibration yield according to the correction coefficient and the secondary electron yield.
Optionally, the beam measuring instrument includes: a single-channel measuring instrument and a double-channel measuring instrument;
the single-channel measuring instrument is respectively connected with the Faraday cup and the mobile terminal; the double-channel measuring instrument is respectively connected with the collector, the sample to be measured and the mobile terminal;
the single-channel measuring instrument is used for measuring the beam current of the electron beam transmitted through the Faraday cup and transmitting the beam current of the electron beam to the mobile terminal;
the dual-channel measuring instrument is used for measuring the current of secondary electrons and the current passing through the sample to be measured and transmitting the current of the secondary electrons and the current passing through the sample to be measured to the mobile terminal.
Optionally, the single-channel measuring instrument is a single-channel picoampere meter; the dual-channel measuring instrument is a dual-channel picoampere meter.
Optionally, the electron excitation source employs an electron gun.
Optionally, the collector is made of metal.
Optionally, the collector is spherical, hemispherical or cylindrical in shape.
Optionally, the calibration device further comprises: a sample stage; the sample table is used for placing a sample to be measured.
Optionally, the sample stage is made of metal
A method for calibrating secondary electron yield measurement, the method using the above-mentioned device for calibrating secondary electron yield measurement, the method comprising:
acquiring current of electron beam current and secondary electrons and current passing through a sample to be detected; the electron beam current is the current of the electron beam transmitted by the Faraday cup when the Faraday cup is positioned below the electron excitation source and completely shields the electron through holes; the electronic through holes are arranged on the collector of the cover-shaped structure; the current of the secondary electrons is the current corresponding to the secondary electrons generated by the sample to be detected under the irradiation of the electrons incident through the electron through holes, and the current is collected by the collector;
calculating secondary electron yield according to the current of secondary electrons and the current passing through the sample to be detected;
calculating a correction coefficient according to the current of the secondary electrons and the beam current of the electron beam;
and obtaining a secondary electron calibration yield according to the correction coefficient and the secondary electron yield.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a calibrating device and a method for secondary electron yield measurement, which are characterized in that a collector and a Faraday cup are arranged to respectively measure electron beam current, current of secondary electrons and current passing through a sample to be measured, and a correction coefficient is calculated according to the current of the secondary electrons and the electron beam current, so that in the calculation of the secondary electron yield, the secondary electron calibration yield is finally calculated by considering the self-collection efficiency of the collector, and the accurate measurement of the secondary electron yield is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a block diagram of a calibration device for secondary electron yield measurement according to an embodiment of the present invention;
FIG. 2 is a graph comparing the results of the pre-calibration and post-calibration provided by the example of the present invention.
Symbol description:
the device comprises an electronic excitation source-1, a Faraday cup-2, a collector-3, a sample stage-4, a beam measuring instrument-5, a mobile terminal-6, a single-channel Pitay meter-7, a double-channel Pitay meter-8, a sample to be measured-9 and secondary electrons-10.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a device and a method for calibrating secondary electron yield measurement, which realize accurate measurement of secondary electron yield by calibrating secondary electron yield according to a correction coefficient.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Example 1
As shown in fig. 1, an embodiment of the present invention provides a calibration device for secondary electron yield measurement, the calibration device including: an electronic excitation source 1, a Faraday cup 2, a collector 3, a beam measuring instrument 5 and a mobile terminal 6.
The Faraday cup 2 is connected with the electronic excitation source 1; the collector 3 is an electron collecting device with a cover-shaped structure provided with an electron through hole, and is covered around the sample 9 to be measured.
The beam measuring instrument 5 is respectively connected with the Faraday cup 2, the collector 3, the sample 9 to be measured and the mobile terminal 6.
The electron excitation source 1 is used for emitting electrons; the electron excitation source 1 may be an electron gun.
The collector 3 is used for collecting secondary electrons 10 generated by the sample 9 to be measured under the irradiation of electrons incident through the electron through hole. Specifically, the collector 3 is made of metal. The collector 3 has a spherical, hemispherical or cylindrical shape. In practice, the collector 3 may be a hemispherical collector 3 made of 304 stainless steel and connected to one channel of the dual channel Piano meter 8 by BNC wire.
The beam measuring instrument 5 is used for measuring the beam current of the electron beam transmitted through the faraday cup 2 when the faraday cup 2 is positioned below the electron excitation source 1 and completely shields the electron through holes.
The beam measuring instrument 5 is also used for measuring the current of secondary electrons 10 and the current through the sample 9 to be measured.
The mobile terminal 6 is used for calculating secondary electron yield according to the current of the secondary electrons 10 and the current passing through the sample 9 to be detected, and calculating a correction coefficient according to the current of the secondary electrons 10 and the beam current of the electron beam;
the mobile terminal 6 is also configured to obtain a secondary electron calibration yield based on the correction coefficient and the secondary electron yield.
Specifically, the beam measuring instrument 5 includes: single channel meters and dual channel meters. The single-channel measuring instrument can be a single-channel Pian meter 7; the dual channel meter may be a dual channel pico ampere meter 8.
The single-channel measuring instrument is respectively connected with the Faraday cup 2 and the mobile terminal 6; the double-channel measuring instrument is respectively connected with the collector 3, the sample 9 to be measured and the mobile terminal 6.
The single channel measuring instrument is used for measuring the beam current of the electron beam transmitted through the faraday cup 2 and transmitting the beam current to the mobile terminal 6.
The dual-channel measuring instrument is used for measuring the current of the secondary electrons 10 and the current passing through the sample 9 to be measured, and transmitting the current of the secondary electrons 10 and the current passing through the sample 9 to be measured to the mobile terminal 6.
As an alternative embodiment, the calibration device further comprises: a sample stage 4; the sample table 4 is used for placing a sample 9 to be tested; the sample stage 4 is made of metal. The sample stage 4 is made of 304 stainless steel, is positioned below the collector 3, and is connected with the other channel of the double-channel Piampere meter 8 through a BNC wire.
In practical applications, the electron excitation source 1, i.e. the electron gun, is located directly above the sample stage 4, and the faraday cup 2 is located below the electron gun and can be moved rotationally to directly below the electron gun. The collector 3 is located above the sample stage 4 and completely encloses it. The single channel Pitay meter 7 is connected with the Faraday cup 2, the double channel Pitay meter 8 is connected with the collector 3 and the sample stage 4, and the data is sent to the mobile terminal 6 (such as a computer) for processing. The Piano meter can communicate with the computer by means of IEE-488 or RS-232. The Faraday cup 2 is connected with a single-channel Piano meter 7 through BNC wires.
The electron gun is used for generating electrons, and the generated electrons serve as incident electrons and are excitation sources of secondary electrons 10. The faraday cup 2 can be moved directly under the electron gun for receiving electrons generated by the electron gun. The faraday cup 2 is positioned below the electron gun, is connected with the electron gun through a screw rod, can move to or from the position right below the electron gun, and can transmit an incident electron beam when moving to the position right below the electron gun.
The computer is connected with the single-channel Pitaan meter 7 and the double-channel Pitaan meter 8 through the GPIB card, is responsible for data acquisition and processing, and finally can realize the calibration of secondary electron yield through data processing.
Example 2
An embodiment of the present invention provides a method for calibrating secondary electron yield measurement, the method using the device for calibrating secondary electron yield measurement in embodiment 1, the method comprising:
acquiring current of electron beam current and secondary electrons and current passing through a sample to be detected; the electron beam current is the current of the electron beam transmitted by the Faraday cup when the Faraday cup is positioned below the electron excitation source and completely covers the electron through hole; the electronic through hole is arranged on the collector of the cover-shaped structure; the current of the secondary electrons is the current corresponding to the secondary electrons generated by the sample to be detected, which is collected by the collector under the irradiation of the electrons incident through the electron through hole.
And calculating secondary electron yield according to the current of the secondary electrons and the current passing through the sample to be detected.
A correction coefficient is calculated from the current of the secondary electrons and the beam current of the electron beam.
And obtaining secondary electron calibration yield according to the correction coefficient and the secondary electron yield.
The comparison result of the secondary electron calibration yield obtained by the secondary electron yield measurement calibration method provided by the invention and the secondary electron yield obtained without calibration is shown in fig. 2.
In practical application, the specific flow of the calibration method may also be as follows:
(1) the faraday cup is moved directly under the electron gun.
(2) And opening a single-channel Pitay meter, and running an acquisition program in the computer.
(3) Setting the working parameters of the electron gun, wherein the working parameters mainly comprise accelerating voltage, cathode current and grid voltage, waiting for a period of time until the single-channel picoampere representation number is basically unchanged, and at the moment, the electron gun is in a stable working state.
(4) And opening a dual-channel Pian meter, and running an acquisition program in the computer.
(5) The faraday cup is removed from directly under the electron gun.
(6) Recording the numerical value of the dual-channel PiAN meter; and calculating according to a formula to obtain secondary electron yield.
Specifically, a current I of secondary electrons is obtained s And the current I passing through the sample to be measured t . Secondary electron yield δ is then calculated:
(7) adjusting the accelerating voltage of the electron gun until the value of the current penetrating through the sample is zero, and recording the value of the two-channel Piampere meter at the moment, namely the current I 'of the secondary electrons after adjustment' s And the adjusted current I 'passing through the sample to be measured' t 。
(8) The Faraday cup is moved back to the position right below the electron gun and the current value of a single channel at the moment, namely the electron beam current I ', is recorded' p 。
(9) Comparing the collecting electrode current recorded by the double channels with the numerical value of the single channel to obtain the collecting efficiency of the device, namely, the correction coefficient:
and (d) introducing the correction coefficient into a secondary electron yield calculation formula to obtain a calibrated secondary electron emission yield delta':
in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (9)
1. A calibration device for secondary electron yield measurement, the calibration device comprising: the device comprises an electronic excitation source, a Faraday cup, a collector, a beam measuring instrument and a mobile terminal;
the Faraday cup is connected with the electronic excitation source;
the collector is an electronic collecting device with a cover-shaped structure provided with an electronic through hole and is covered around the sample to be tested;
the beam measuring instrument is respectively connected with the Faraday cup, the collector, the sample to be measured and the mobile terminal;
the electron excitation source is used for emitting electrons;
the collector is used for collecting secondary electrons generated by the sample to be tested under the irradiation of electrons incident through the electron through hole;
the beam measuring instrument is used for:
measuring the beam current of the electron beam transmitted through the Faraday cup when the Faraday cup is positioned below the electron excitation source and completely shields the electron through holes;
measuring the current of secondary electrons and the current passing through the sample to be measured;
the mobile terminal is used for:
calculating secondary electron yield according to the current of secondary electrons and the current passing through the sample to be detected;
calculating a correction coefficient according to the current of the secondary electrons and the beam current of the electron beam;
and obtaining a secondary electron calibration yield according to the correction coefficient and the secondary electron yield.
2. The apparatus according to claim 1, wherein the beam measuring instrument comprises: a single-channel measuring instrument and a double-channel measuring instrument;
the single-channel measuring instrument is respectively connected with the Faraday cup and the mobile terminal; the double-channel measuring instrument is respectively connected with the collector, the sample to be measured and the mobile terminal;
the single-channel measuring instrument is used for measuring the beam current of the electron beam transmitted through the Faraday cup and transmitting the beam current of the electron beam to the mobile terminal;
the dual-channel measuring instrument is used for measuring the current of secondary electrons and the current passing through the sample to be measured and transmitting the current of the secondary electrons and the current passing through the sample to be measured to the mobile terminal.
3. The calibration device for secondary electron yield measurement according to claim 2, wherein the single channel meter is a single channel picometer; the dual-channel measuring instrument is a dual-channel picoampere meter.
4. The apparatus according to claim 1, wherein the electron excitation source is an electron gun.
5. The apparatus according to claim 1, wherein the collector is made of metal.
6. The apparatus according to claim 1, wherein the collector is spherical, hemispherical or cylindrical in shape.
7. The apparatus according to claim 1, further comprising: a sample stage; the sample table is used for placing a sample to be measured.
8. The apparatus according to claim 7, wherein the sample stage is made of a metal material.
9. A method of calibrating a secondary electron yield measurement, characterized in that the method employs a secondary electron yield measurement calibrating device according to any of claims 1-8, the method comprising:
acquiring current of electron beam current and secondary electrons and current passing through a sample to be detected; the electron beam current is the current of the electron beam transmitted by the Faraday cup when the Faraday cup is positioned below the electron excitation source and completely shields the electron through holes; the electronic through holes are arranged on the collector of the cover-shaped structure; the current of the secondary electrons is the current corresponding to the secondary electrons generated by the sample to be detected under the irradiation of the electrons incident through the electron through holes, and the current is collected by the collector;
calculating secondary electron yield according to the current of secondary electrons and the current passing through the sample to be detected;
calculating a correction coefficient according to the current of the secondary electrons and the beam current of the electron beam;
and obtaining a secondary electron calibration yield according to the correction coefficient and the secondary electron yield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310382582.3A CN116626741A (en) | 2023-04-12 | 2023-04-12 | Calibrating device and method for secondary electron yield measurement |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310382582.3A CN116626741A (en) | 2023-04-12 | 2023-04-12 | Calibrating device and method for secondary electron yield measurement |
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| CN116626741A true CN116626741A (en) | 2023-08-22 |
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| CN202310382582.3A Pending CN116626741A (en) | 2023-04-12 | 2023-04-12 | Calibrating device and method for secondary electron yield measurement |
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- 2023-04-12 CN CN202310382582.3A patent/CN116626741A/en active Pending
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