CN116625503A - Chip-level infrared spectrometer - Google Patents
Chip-level infrared spectrometer Download PDFInfo
- Publication number
- CN116625503A CN116625503A CN202210127586.2A CN202210127586A CN116625503A CN 116625503 A CN116625503 A CN 116625503A CN 202210127586 A CN202210127586 A CN 202210127586A CN 116625503 A CN116625503 A CN 116625503A
- Authority
- CN
- China
- Prior art keywords
- chip
- detector
- packaging structure
- micro
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001228 spectrum Methods 0.000 claims abstract description 32
- 238000004806 packaging method and process Methods 0.000 claims abstract description 23
- 238000001514 detection method Methods 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000012545 processing Methods 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000005286 illumination Methods 0.000 abstract description 5
- 230000008023 solidification Effects 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 17
- 230000010354 integration Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 238000012271 agricultural production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0202—Mechanical elements; Supports for optical elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
Abstract
The application discloses a chip-level infrared spectrometer. The integrated chip comprises an inner packaging structure and an outer packaging structure, wherein the inner packaging structure is used for driving and processing the photoelectric conversion detector, the light splitting device and the detector to carry out chip-level high-integration packaging on the integrated chip, and the outer packaging structure is used for tightly combining the inner structure, the micro lens or the lens and the micro illumination to realize the solidification of the whole structure. The light splitting device adopts a thin film narrow-band filter array, a micro interval for eliminating mixed spectrum is designed between detection units of the photoelectric conversion detector, the two are in one-to-one correspondence in space, and different detector units receive signals with different wavelengths to realize spectrum measurement. The chip-level spectrometer has the advantages of compact, stable and vibration-resistant performance, and the overall size is not more than 1 cm.
Description
Technical Field
The application belongs to the technical field of spectrum measurement, and relates to a chip-level micro spectrometer.
Background
The spectrum detection technique is a technique of analyzing the components, properties (temperature, surface structure) and the like of a target by measuring the reflection and emission differences (reflection spectrum characteristics/emission spectrum characteristics) of the target for light rays of different wavelengths. The spectroscopic instrument can perform qualitative and quantitative analysis on the structure and the components of the substances without damage by applying the optical principle, and is one of the most widely used analysis tools in the scientific research and industry at present. In the field of spectrum analysis, the spectrum is generally divided into ultraviolet, visible-near infrared, shortwave, medium wave infrared, thermal infrared and other parts, and different material characteristics are corresponding. The infrared spectrum has very rich spectral characteristics, can be widely applied to analysis and detection of substance components, types and other attributes, has wide requirements and application in the fields of chemistry, chemical industry, environmental protection, agriculture, construction, daily application and the like, and has great application requirements in daily life along with the rapid expansion of the application field of the spectrum measurement technology along with the application of the information technology, such as popularization of industrial and agricultural production detection, environment and household intellectualization, daily consumer electronics and the like.
The conventional high-spectrum resolution detecting instrument has large volume and high price, can be only used in occasions such as laboratories, and the like, the miniaturized spectrum detecting or analyzing instrument can be used for online application and field application, has performance lower than that of equipment applied in the laboratories, a plurality of products exist at present, the whole size is more than 10 cm, products below 10 cm are relatively few, the spectrometer with the size is generally used in the fields of industry, business and the like, and the aspects such as popularization of consumer electronics, intelligent life, health and environmental protection, daily life and sales industry are more required to have lower price and smaller volume of a spectrum measuring module, the use is more convenient, and the spectrometer with smaller volume is designed to be a rigidity requirement.
The infrared spectrum measuring device or module with the advantages of miniature firmness, convenient use and low cost is an important way for the spectrum technology to enter more scenes and various links and fields of daily life, and the technical path is necessarily highly integrated. Mainly the miniaturization of detectors, spectroscopic devices, driving and information processing circuits, optical systems, and chip scale integration and packaging. The related technology has been developed, but miniaturization and even device-level and chip-level spectrometers are still technical problems, and the related production process and products of the infrared spectrometers with the size of centimeter magnitude are very few at present, so that the requirements of various fields on miniaturization of the spectrometers cannot be met.
The 2021 of Beijing and light technology limited company provides a preparation method of a spectrum chip and the spectrum chip, and an application patent (CN 112510059B) is obtained. The preparation method comprises the following steps: providing a transfer piece and a spectrum chip semi-finished product, wherein the transfer piece comprises a silicon crystal layer and a silicide layer formed on the silicon crystal layer, and the silicon crystal layer has a regular crystal orientation structure; forming a light-permeable medium layer on the surface of the spectrum chip semi-finished product; the transfer member is coupled to the semi-finished spectral chip in such a way that the silicide layer of the transfer member is bonded to the light-permeable dielectric layer of the semi-finished spectral chip to form the spectral chip with a light modulation structure. Thus, the surface of the spectral chip manufactured by the specific manufacturing method as described above can form an optical layer structure with a regular crystal orientation structure, and the optical layer structure has the function of modulating imaging light. The application is a typical spectrum chip, and a light filtering structure is processed on the surface of a detector to realize spectrum measurement, and the limitation is that a silicon material is adopted, so that only signals in visible-near infrared wave bands can be measured.
In the field of consumer electronics and industrial and agricultural online detection, different detection requirements are met, a spectrometer with more spectral range selection is needed, for example, the spectral characteristics of short-wave infrared (namely, light with the wavelength range of 950-2500 nm) are richer than those of visible near-infrared bands, the spectral characteristics are more identifiable, the spectral characteristics are more commonly used substance components, types and other attribute analysis and detection wavelength ranges, the design difficulty of a chip-level spectrometer with the band is higher, the cost is high, no related product exists, and most of the prior art is limited to manufacturing methods and processes of spectral chip components and needs to be provided with auxiliary components such as a drive and an optical lens so as to be applied, so that a micro spectrometer with a millimeter scale and a more complete overall function is needed.
There are many more selectable spectral ranges of chip-scale spectrometers that can be mass-produced at low cost only by means of chip-scale integration, and that require the integration of ancillary circuits and optical components to achieve the integrity of the overall functionality. The application uses infrared lightMethod for advancing microminiaturization of spectrometer to chip level integration, realizing that the whole volume is only 1cm 3 Or smaller, fully functional spectrometers.
Disclosure of Invention
The application aims to realize a chip-level infrared spectrometer, which is integrated on a chip level to realize an infrared spectrometer with millimeter-level overall size and complete functions and is used for low-cost popularization type application scenes in industries such as consumer electronics, intelligent life, health and environmental protection, daily life, sales industry and the like.
The chip-level infrared spectrometer mainly comprises the following structures: the photoelectric conversion detector chip 1, the thin film light splitting device 2, the detector driving and processing integrated chip 3, the inner layer chip packaging structure 4, the inner packaging window 5, the micro lens group or micro lens array 6 and the outer packaging structure 7 are characterized in that the photoelectric conversion detector 1, the light splitting device 2 and the detector driving and processing integrated chip 3 are tightly combined through the chip level packaging structure 4, and a detected signal is incident from the inner layer window 5; the microlens assembly or microlens array 6 and the inner layer structure are joined together by an outer package structure 7 to form a spectrometer having an overall dimension on the order of millimeters.
The wavelength range of the light splitting device is within the effective range of the detector, and the light splitting film or the integrated narrow-band filter adopting the technology of graded filter, super surface, surface plasmon or integrated microcavity is divided into a plurality of narrow-band filter units which can selectively transmit signals with different wavelengths, and the narrow-band filter units are matched with the detector in size and correspond to each other one by one. According to the different detectors, the optical filter units in the corresponding wavelength ranges are matched, so that the spectrum measurement of visible-near infrared band, short wave infrared band, middle wave infrared band, long wave infrared band and different band combinations can be realized.
The detection units of the photoelectric conversion detector 1 are separated by a small interval for eliminating spectrum aliasing or offset influence of the edges of the narrow-band filter units included in the thin-film spectroscopic device 2, so that the detector only receives optical signals with a single wavelength (within the effective band-pass range of the narrow-band filter).
The converging and collimating and shaping modes of the microlens group or microlens array 6 are matched with the spatial distribution of the detector units, so that the target signals are uniformly dispersed to the detector units and vertically irradiated on the surface of the light splitting device.
Besides the fixed optical element, the outer packaging structure 7 also has the functions of packaging and fixing the micro light source or light source group 8, the outer packaging structure (7) is provided with one or more micro light sources or light source groups 8 at the edge position, the light emitting elements can be one or more, the micro light sources or light source groups 8 are LED light emitting diodes, laser diodes, organic LEDs or other micro light sources and combinations thereof, the packaging structure fixes the light emitting devices and enables light to be converged and irradiated on a measured object, and the spectrum range of the light source is matched with the chip-level infrared spectrometer to form an integrated micro active illumination spectrometer. The chip-level spectrometer can not contain a light source, can realize spectral measurement under indoor, no-light and poor illumination conditions after integrating the light source, and expands application adaptability.
The application has the advantages that the chip-level integrated structure of the spectrometer is provided, the structure comprises two layers, the inner layer structure can carry out circuit integration and integrated packaging on chips with different materials and functions, the minimization of a detector chip, a thin film light splitting device and an auxiliary circuit system is realized, the control of the internal environment is realized, the controllability of spectrum measurement precision is ensured, the minimization of system integration is realized by the outer layer structure, and the stability, the firmness and the vibration resistance of the whole structure are realized.
The application has the advantages that the spectrum range can be flexibly configured through the selection and combination of the detector chip and the thin film light splitting device, and the spectrum instruments of visible-near infrared, short wave infrared, thermal infrared and other spectrum ranges can be respectively realized.
The method provided by the application has the advantages that the integration of the optical element and the illumination element is realized through the outer layer structure, so that the chip-level spectrometer has complete functions and has the characteristics of the instrument.
The advantages and features of the application will become apparent from the description of the specific embodiments, and may be realized by means of the instrumentalities and combinations particularly pointed out in the appended claims.
Drawings
The above and other objects, features and advantages of the present application will become more apparent from the following more detailed description of the present application when taken in conjunction with the accompanying drawings. The accompanying drawings are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate the application and together with the embodiments of the application, and not constitute a limitation to the application.
Fig. 1 is a schematic cross-sectional side view of a chip-scale spectrometer.
FIG. 2 is a schematic diagram of the front view architecture of a chip-scale spectrometer;
in the figure:
1 a photoelectric conversion detector chip;
2 a light-splitting device;
3, a detector driving and processing integrated chip;
4, inner chip-scale packaging structure;
5, packaging a window in the container;
6 a microlens set or microlens array;
7, an outer packaging structure;
8 miniature light sources or groups of light sources.
Fig. 3 is a schematic diagram of layout matching of a detection unit and an optical filter array of a chip-scale spectrometer in a short-wave infrared band.
Fig. 4 is a schematic diagram of three-layer structure and spatial correspondence of a chip-level spectrometer in the visible near infrared band.
Fig. 5 is a schematic diagram of spatial correspondence between a filter unit and a detector of a chip-scale spectrometer in the visible near infrared band.
Fig. 6 is a schematic diagram of the correspondence between the filter units and the detectors of a chip-scale spectrometer in the thermal infrared band.
Detailed Description
Hereinafter, exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. It should be apparent that the described embodiments are only some embodiments of the present application and not all embodiments of the present application, and it should be understood that the present application is not limited by the example embodiments described herein.
The chip-level infrared spectrometer is based on a practical design concept, a miniaturized concept and a market target applied to a mobile terminal, comprehensively considers cost optimization, and can form micro devices with different types and various spectral ranges and spectral resolutions.
Example 1: short wave infrared chip-level spectrometer
The short wave infrared chip-level spectrometer adopts an InGaAs detector chip to realize detection of spectrum signals, and the whole structure is shown in figure 1 (without an integrated light-emitting element). The size of the detection units (pixels) of the detector is 25 μm,128 detection units are arranged in a linear array; the matched driving and signal processing circuits are realized by silicon-based integrated circuits; the optical filter adopts an integrated microcavity integrated optical filter, the spectral resolution is 5nm, the total number of the narrow-band spectral channels is 124, redundant detectors can form dark pixels through masks, and dark current or background signals are collected and used for signal processing and temperature correction. The micro lens adopts a mode of combining a cylindrical mirror with a reflecting mirror micro array to realize that incident light signals are scattered and irradiated on a green light sheet on the surface of the linear array detector.
Fig. 3 is an embodiment of a layout of the mutual matching relationship of the array of detection units (solid line box) and the array of integrated filter structures (broken line box), and the pixels are spaced by 10 μm, which enables the spectrometer to avoid spectrum mixing of signals in adjacent wave bands without optical lenses, and improves the accuracy of spectrum measurement.
The design technical indexes are as follows: wavelength range 1050 nm-1650 nm, spectral resolution 5nm, device size 10mm (without light source). An integrated microcavity filter is adopted by the light-splitting device.
Example 2: chip-level spectrometer with visible near infrared band
The chip-level infrared spectrometer realized based on the CMOS silicon photoelectric detector has a measuring distance of not more than 1cm and a spectrum measuring range of 650nm-950nm, and is used for near infrared band spectrum measurement and feature recognition. The overall structure composition is shown in fig. 1 and 2. The light source adopts four LEDs, the spectrum of the four LEDs can cover the visible near infrared band after being combined, the four LED lamps are obliquely and fixedly arranged, the light emitting surface faces to the position 0.5 cm outside the optical axis direction of the detection window, and the position 0.5-1 cm away from the optical axis forms the full-spectrum illumination of the visible near infrared band. The photoelectric conversion detector adopts a CMOS silicon basal plane array detector, is a 36-36 small area array, each detection unit is 10 microns in size and 10 microns in size, adopts a working mode of combining 4 pixels, improves the signal-to-noise ratio of a system, and comprises a reading circuit with the overall size of 0.5mm and 0.5mm. The film filter adopts a microcavity filter array, the microcavity structure size of each microcavity filter is 20 microns by 20 microns, 4 detector units can be covered, the spectral bandwidth of the filter is 1.5nm, 200 wave bands are taken up, 800 pixels are occupied, and redundant pixels are used for correcting the temperature and dark current of detected data.
Fig. 4 is a side view showing a spatial relationship among a photoelectric conversion detector of a visible near infrared spectrometer, a thin film narrow band filter, and a microlens array, and fig. 5 is a top view showing the relationship among the three, wherein a solid square represents a detection unit of the photoelectric conversion device, a circle represents a lens unit of the microlens array, an outer diameter represents a range of lens collected light, an inner diameter represents a maximum range projected to the filter and the detection unit after being collected and collimated, a dotted square corresponds to a structural unit of one microcavity filter, and a structural unit of each microcavity filter corresponds to a central wavelength, and only optical signals in a wavelength range of (central wavelength-0.7 nm) to (central wavelength +0.7 nm) are allowed to pass.
Example 3: chip-level infrared spectrometer of thermal infrared band
The whole structure of the chip-level infrared spectrometer based on the room temperature thermal infrared band detector is shown in figure 1, and no light source exists. The detector adopts a double-linear array thermal infrared detector, the filter element adopts a linear gradient filter, the corresponding relation between the filter element and the detector is shown in figure 6, the lens system adopts a plane transmission window, and the spectral resolution is 100nm.
Claims (5)
1. The utility model provides a chip-level infrared spectrometer, includes photoelectric conversion detector chip (1), beam split device (2), detector drive and handles integrated chip (3), inlayer chip-level packaging structure (4), interior encapsulation window (5), microlens group or microlens array (6), outer packaging structure (7), its characterized in that:
the photoelectric conversion detector (1), the light splitting device (2) and the detector driving and processing integrated chip (3) are tightly combined through the chip-level packaging structure (4), a detected signal is incident from the inner layer window (5), and the light splitting device transmits light with different wavelengths into different detector units; the outer packaging structure (7) combines the micro lens group or micro lens array (6) and the inner layer structure to form the spectrometer with the whole size of millimeter magnitude.
2. The chip-scale infrared spectrometer according to claim 1, wherein the light splitting device (2) is a light splitting film or an integrated narrow band filter adopting a graded filter, a super surface, a surface plasmon or an integrated microcavity technology.
3. The chip-scale infrared spectrometer according to claim 1, characterized in that there is a small gap between the detection units of the photoelectric conversion detector (1) to eliminate the aliasing or offset effects of the narrowband filter unit edge spectrum.
4. The chip-scale infrared spectrometer according to claim 1, wherein the converging and collimating and shaping modes of the micro lens group or micro lens array (6) are matched with the spatial distribution of the detector units, and the detector units are rectangular or square or circular, and the target signals are uniformly dispersed to the detector units by adopting a conventional converging lens and adopting a cylindrical mirror in the case of a linear array detector.
5. The chip-scale infrared spectrometer according to claim 1, wherein the outer packaging structure (7) is provided with a micro light source or light source group (8) at the edge position, and the micro light source or light source group (8) is an LED light emitting diode or a laser diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210127586.2A CN116625503A (en) | 2022-02-11 | 2022-02-11 | Chip-level infrared spectrometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210127586.2A CN116625503A (en) | 2022-02-11 | 2022-02-11 | Chip-level infrared spectrometer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116625503A true CN116625503A (en) | 2023-08-22 |
Family
ID=87601353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210127586.2A Pending CN116625503A (en) | 2022-02-11 | 2022-02-11 | Chip-level infrared spectrometer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116625503A (en) |
-
2022
- 2022-02-11 CN CN202210127586.2A patent/CN116625503A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11609119B2 (en) | Spectrometry system with visible aiming beam | |
| Bao et al. | A colloidal quantum dot spectrometer | |
| US7524459B2 (en) | Optoelectronic and microfluidic integration for miniaturized spectroscopic devices | |
| US6867420B2 (en) | Solid-state detector and optical system for microchip analyzers | |
| US7466409B2 (en) | Method and apparatus for CMOS imagers and spectroscopy | |
| US6630999B2 (en) | Color measuring sensor assembly for spectrometer devices | |
| Correia et al. | Single-chip CMOS optical microspectrometer | |
| CN107636445A (en) | The spectroscopic system and its method of middle infrared high spectrum | |
| US20120156714A1 (en) | Integrated cytometric sensor system and method | |
| CN111505820A (en) | Monolithic integrated image sensing chip and spectrum identification equipment | |
| Malinen et al. | Advances in miniature spectrometer and sensor development | |
| CN103017905B (en) | The micro spectrometer of integrated planar grid pitch changing grating and micro-slit and manufacture method thereof | |
| CN202255624U (en) | Optical fiber bundle spectrometer | |
| CN217083957U (en) | Chip-level infrared spectrometer | |
| CN116625503A (en) | Chip-level infrared spectrometer | |
| CN211627935U (en) | Monolithic integrated image sensing chip and spectrum identification equipment | |
| JP6038445B2 (en) | Automatic analyzer | |
| CN111562004A (en) | Quantum dot light source chip spectrometer without light splitting system and spectrum reconstruction method | |
| JP2005127943A (en) | Optical measuring instrument and spectrograph | |
| Karioja et al. | Integrated multi-wavelength mid-IR light source for gas sensing | |
| CN111721414A (en) | Spectrometer | |
| CN106940295B (en) | Ultra portable near-infrared spectrum analysis system based on gradual filter | |
| US20220099488A1 (en) | Multi-channel array type optical sensing device and manufacturing method thereof | |
| JP2021501314A (en) | Spectrometer with self-correction of misalignment | |
| Kopola et al. | Hybridization, assembling, and testing of miniaturized optoelectronic modules for sensors and microsystems |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |