CN116625282A - Method for measuring thickness of scintillator in detector - Google Patents
Method for measuring thickness of scintillator in detector Download PDFInfo
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- CN116625282A CN116625282A CN202211554019.1A CN202211554019A CN116625282A CN 116625282 A CN116625282 A CN 116625282A CN 202211554019 A CN202211554019 A CN 202211554019A CN 116625282 A CN116625282 A CN 116625282A
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- Prior art keywords
- scintillator
- detector
- thickness
- ray
- measuring
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000001228 spectrum Methods 0.000 claims abstract description 15
- 238000005457 optimization Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 25
- 238000001914 filtration Methods 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 13
- 238000004364 calculation method Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000011478 gradient descent method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Abstract
The invention discloses a method for measuring thickness of a scintillator in a detector, which comprises the following steps: a. detecting wide-energy-spectrum X-rays emitted by a common X-ray light source by using a detector, and calculating a counting value I read by the detector; b. simplifying the formula and performing at least two X-ray exposures, wherein the first exposure is used for obtaining I1, the energy spectrum reaching the detector is changed, and the second exposure is used for obtaining I2; c. and carrying out optimization solution on the obtained formula to obtain the thickness of the scintillator. The thickness of the scintillator can be obtained without disassembling the detector; the scintillator is not contacted, and the scintillator is not damaged; when measuring, the scintillator is packaged, and the performance degradation risk of the scintillator caused by measuring does not exist.
Description
Technical Field
The invention relates to a method for measuring thickness of a scintillator in a detector.
Background
The thickness of the scintillator affects the absorption efficiency of the detector, MTF and other performance parameters, and is one of the most important control indexes for detector production, so that the measurement of the thickness of the scintillator is necessary. The existing scintillator measurement method comprises scanning electron microscope, micrometer measurement and the like.
When the scintillator is measured by a scanning electron microscope, the following steps are generally performed: 1, cutting the scintillator together with the substrate into small pieces of about 1cm by using a cutter; 2, placing the prepared sample on a test tool table and fixing the sample; 3, placing the tool table into an evaporation chamber, and plating a gold layer (about 10 nm) on the surface of the sample to enable the sample to have good conductivity; 4, placing the sample into a vacuum chamber, and vacuumizing to 10e-6pa; and 5, adjusting the lens to the position of the sample, observing the appearance of the sample and measuring the thickness of the scintillator. The method has the advantages of complicated measuring process and low measuring efficiency.
The micrometer measures the scintillator as follows: 1, measuring the thickness of a sample measurement substrate (selecting a scintillator-free part around the sample) by using a micrometer, measuring different parts at least for more than 5 times, and averaging to obtain the thickness d0 of the substrate; 2, measuring the thickness of the scintillator and the substrate at different positions by using a micrometer, measuring each point for more than three times, and averaging, wherein the thickness di of the scintillator and the substrate at each point is recorded; 3, the scintillator thickness di=di-d 0 for each point. The micrometer measures, and the measured results of different extrusion degrees of the micrometer are inconsistent, and in the measuring process, the scintillator is extruded in contact, and the scintillator of the contact part cannot be used.
And all existing methods need to measure the scintillator before the detector is assembled, and the scintillator is measured in contact, so that damage to the scintillator is likely to happen. Furthermore, the scintillator material cannot be exposed to air for a long period of time, and both of these schemes risk deterioration of the scintillator performance. It is therefore necessary to devise a method that can measure the thickness of a scintillator without touching it.
Disclosure of Invention
The invention aims to provide a method for measuring thickness of a scintillator in a detector.
In order to solve the technical problems, the invention adopts the following technical scheme: a method for measuring the thickness of a scintillator inside a detector, comprising the steps of:
a. the detector is used for detecting the wide-energy-spectrum X-rays emitted by the common X-ray light source, and the counting value I read out by the detector has the following calculation formula:
wherein G is the gain of the detector, S (E) is the X-ray energy spectrum, mu Filtration (E) Absorption coefficient, d, of the total filter material of the X-ray source Filtration Thickness of total filter material of X-ray source, mu i (E) D is the absorption coefficient of other materials in the optical path system between the source outlet and the detector i I represents the material of which kind is the thickness of other materials in the optical path system between the source outlet and the detector, i=0 represents that the X-ray in the optical path does not pass through other materials, the air is negligible, mu Scintillator (E) D, the absorption coefficient of the scintillator of the detector Scintillator Thickness of scintillator for detector;
b. let S' (E) =s (E) ·exp (- μ) Filtration (E)·d Filtration )·exp(-∑(μ i (E)·d i ))，
S' (E) is the X-ray energy spectrum reaching the detector,
performing at least two X-ray exposures, wherein the first exposure is to obtain I1, changing the energy spectrum reaching the detector, performing the second exposure is to obtain I2,
c. and carrying out optimization solution on the formula to obtain the thickness of the scintillator:
in another embodiment, S' (E) is the number of photons of the X-rays at each energy E.
In another embodiment, different S' (E) may be obtained by varying the voltage kVp applied to the X-ray source and/or by varying the material through which the X-rays pass within the optical path system.
The invention has the beneficial effects that: the thickness of the scintillator can be obtained without disassembling the detector; the scintillator is not contacted, and the scintillator is not damaged; when measuring, the scintillator is packaged, and the performance degradation risk of the scintillator caused by measuring does not exist.
Drawings
FIG. 1 is a schematic flow chart of the present invention;
FIG. 2 is a schematic representation of the invention at the first measurement I (no known sample);
fig. 3 is a schematic diagram of the second measurement I according to the invention (with a known sample).
Detailed Description
The invention is described in detail below with reference to the embodiments shown in the drawings:
as shown in fig. 1, the method for measuring the thickness of the scintillator in the detector comprises the following steps:
a. the detector is used for detecting the wide-energy-spectrum X-rays emitted by the common X-ray light source, and the counting value I read out by the detector has the following calculation formula:
wherein G is the gain of the detector, S (E) is the X-ray energy spectrum, mu Filtration (E) Absorption coefficient, d, of the total filter material of the X-ray source Filtration Thickness of total filter material of X-ray source, mu i (E) D is the absorption coefficient of other materials in the optical path system between the source outlet and the detector i I represents the material of which kind is the thickness of other materials in the optical path system between the source outlet and the detector, i=0 represents that the X-ray in the optical path does not pass through other materials, the air is negligible, mu Scintillator (E) D, the absorption coefficient of the scintillator of the detector Scintillator Thickness of scintillator for detector; for a commonly used tungsten target, the shape of the S (E) X-ray energy spectrum in the formula 1 (1) is combined with kVp measured by a dosimeter, and can be given by simulation calculation, the filtered material and thickness are commonly expressed by equivalent aluminum filtering in the industry, the absorption coefficient of aluminum can be obtained by looking up a table, and the equivalent thickness can be measured by the dosimeter; other materials in the optical path can be freely selected and controlled in thickness, and the thickness is also known; the absorption coefficient of the scintillator can also be obtained by looking up a table according to the scintillator material selected in the detector; the gain G of the detector in the formula (1) relates to the conversion efficiency of the X-ray and the visible light in the detector, the absorption efficiency of the visible light and the like, and cannot be directly obtained; thus in equation (1), there are two non-existentSince the required thickness information of the scintillator cannot be obtained by one X-ray detection, the thickness of the scintillator can be calculated by at least two X-ray exposures.
b. Let S' (E) =s (E) ·exp (- μ) Filtration (E)·d Filtration )·exp(-∑(μ i (E)·d i ))，
S' (E) is the X-ray energy spectrum reaching the detector, i.e. the number of photons of the X-rays at each energy E,
performing X-ray exposure, wherein the first exposure is performed to obtain I1, changing the energy spectrum reaching the detector, performing the second exposure is performed to obtain I2,
c. and (3) carrying out optimization solution on the formula by using a conjugate gradient descent method to obtain the thickness of the scintillator:
different S' (E) can be obtained by varying the voltage kVp applied to the X-ray source and/or by varying the material through which the X-rays pass within the optical path system.
Example 1
In this example, the distance from the X-ray source to the detector was set to 1.5 meters, the beam splitter was adjusted to set the X-ray area of the detector to about 1cm, a 1mm aluminum filter was placed at the source outlet, parameters of the X-ray source were set to 90kV,10mAs, and the total filter and kVp of the source were measured using a dosimeter model Piranha R/F manufactured by RTI, sweden.
The first X-ray exposure is performed without changing the above settings, resulting in a first detector reading I1.
Without changing the above arrangement, placing a known sample, such as 1mm thick copper sheet, on the X-ray path, performing a second X-ray exposure to obtain a second reading I2 of the detector, and solving formula (3) to obtain the scintillator thickness d Scintillator 。
The above embodiments are provided to illustrate the technical concept and features of the present invention and are intended to enable those skilled in the art to understand the content of the present invention and implement the same, and are not intended to limit the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.
Claims (3)
1. A method for measuring the thickness of a scintillator in a detector, comprising the steps of:
a. the detector is used for detecting the wide energy spectrum X-ray emitted by the common X-ray light source, and according to the beer-lambert law and the energy deposition of the detector, the calculation formula of the count value I read out by the detector is as follows:
I＝G·∫S(E)·exp(-μ filtering (E) ·d Filtration )·exp(-∑(μ i(E) ·d i ))·(1-exp(-μ Scintillator (E) ·d Scintillator ))dE (1)
Wherein G is the gain of the detector, S (E) is the X-ray energy spectrum, mu Filtering (E) Absorption coefficient, d, of the total filter material of the X-ray source Filtration Thickness of total filter material of X-ray source, mu i(E) D is the absorption coefficient of other materials in the optical path system between the source outlet and the detector i I represents the material of which kind is the thickness of other materials in the optical path system between the source outlet and the detector, i=0 represents that the X-ray in the optical path does not pass through other materials, the air is negligible, mu Scintillator (E) D, the absorption coefficient of the scintillator of the detector Scintillator Thickness of scintillator for detector;
b. let S' (E) =s (E) ·exp (- μ) Filtering (E) ·d Filtration )·exp(-∑(μ i(E) ·d i ))，
S' (E) is the X-ray energy spectrum reaching the detector,
performing at least two X-ray exposures, wherein the first exposure is to obtain I1, changing the energy spectrum reaching the detector, performing the second exposure is to obtain I2,
c. and carrying out optimization solution on the formula to obtain the thickness of the scintillator:
2. the method for measuring thickness of scintillator in detector according to claim 1, wherein: s' (E), i.e. the number of photons of the X-ray at each energy E.
3. The method for measuring thickness of scintillator in detector according to claim 1, wherein: different S' (E) can be obtained by varying the voltage kVp applied to the X-ray source and/or by varying the material through which the X-rays pass within the optical path system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211554019.1A CN116625282A (en) | 2022-12-06 | 2022-12-06 | Method for measuring thickness of scintillator in detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211554019.1A CN116625282A (en) | 2022-12-06 | 2022-12-06 | Method for measuring thickness of scintillator in detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116625282A true CN116625282A (en) | 2023-08-22 |
Family
ID=87619958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211554019.1A Pending CN116625282A (en) | 2022-12-06 | 2022-12-06 | Method for measuring thickness of scintillator in detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116625282A (en) |
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2022
- 2022-12-06 CN CN202211554019.1A patent/CN116625282A/en active Pending
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