CN116615088A - Magnetic tunnel junction, preparation method and application thereof - Google Patents
Magnetic tunnel junction, preparation method and application thereof Download PDFInfo
- Publication number
- CN116615088A CN116615088A CN202310660242.2A CN202310660242A CN116615088A CN 116615088 A CN116615088 A CN 116615088A CN 202310660242 A CN202310660242 A CN 202310660242A CN 116615088 A CN116615088 A CN 116615088A
- Authority
- CN
- China
- Prior art keywords
- tellurium
- transition metal
- tunnel junction
- magnetic tunnel
- alkene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 58
- 150000003624 transition metals Chemical class 0.000 claims abstract description 48
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 34
- -1 tellurium alkene Chemical class 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 19
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 230000015654 memory Effects 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 4
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a magnetic tunnel junction, a preparation method and application thereof, wherein the magnetic tunnel junction comprises the following components: a center scattering region, and left and right electrode regions directly connected to the center scattering region; the material of the central scattering region is tellurium alkene; the left electrode region and the right electrode region are transition metal doped tellurium alkene; the left electrode region and the right electrode region are under the same stress field. The magnetic tunnel junction is simple in design and high in magnetic resistance ratio and current transmission efficiency.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a magnetic tunnel junction, a preparation method and application thereof.
Background
The magnetic tunnel junction is an important magnetic memory device and has wide application in the fields of magnetic random access memories, magnetic logic devices, magnetic sensors and the like. The magnetic tunnel junction is a structure composed of two magnetic layers sandwiching a fine tunnel layer, wherein the thickness of the tunnel layer is only a few nanometers, and is often made of insulating materials such as aluminum oxide or magnesium oxide). Because of the tunnel layer, even though the two magnetic layers are spinning in the same direction, a current can pass between the magnetic layers, a phenomenon known as the tunneling magnetoresistance effect, whose value is known as The Magnetoresistance Ratio (TMR) of the magnetic tunnel junction. Magnetic tunnel junctions have important applications in high density and high speed nonvolatile memories due to the special nature of the tunneling magnetoresistance effect. Compared with a transistor, the magnetic tunnel junction consumes less current, and has the advantages of rapid reading and writing, long-term stability, no need of refreshing, capacity expansion and the like. However, current magnetic tunnel junctions also face some problems. Taking aluminum oxide as an example, the defects mainly comprise low magnetic resistance, low current transmission efficiency and the like. Since the size of TMR is related to the spin polarization state of the magnetic layer, the spin polarization state of electrons in the current is difficult to control, which limits the maximum value of TMR. Therefore, how to improve TMR and current transmission efficiency is a worthy research problem in the field of magnetic tunnel junctions.
Disclosure of Invention
The invention provides a magnetic tunnel junction, a preparation method and application thereof, which are used for improving the magnetic resistance ratio and the current transmission efficiency of the magnetic tunnel junction.
To achieve the above object, the present invention provides a magnetic tunnel junction comprising:
a center scattering region, and left and right electrode regions directly connected to the center scattering region;
the material of the central scattering region is tellurium alkene;
the left electrode region and the right electrode region are transition metal doped tellurium alkene;
the left electrode region and the right electrode region are under the same stress field.
The invention also provides a preparation method of the magnetic tunnel junction, which comprises the following steps:
s1, heating original tellurium and a transition metal atom source in a high-vacuum reaction chamber, then introducing hydrogen, and depositing a layer of transition metal doped tellurium alkene film on a substrate;
s2, stopping heating the transition metal atom source, continuously introducing hydrogen, heating original tellurium, and depositing a layer of tellurium alkene film on the transition metal doped tellurium alkene film;
and S3, heating the original tellurium and the transition metal atom source again at the same time, continuously introducing hydrogen, and depositing a layer of transition metal doped tellurium thin film on the tellurium thin film to obtain a transition metal doped tellurium/transition metal doped tellurium sandwich structure, namely a magnetic tunnel junction.
To achieve the above object, the present invention also proposes the use of the above magnetic tunnel junction for a memory, a processor, a logic device or a sensor.
Compared with the prior art, the invention has the advantages that:
1. the magnetic tunnel junction designed by the invention has simple design, the electrode area material and the central scattering area material are of the same structure, the difference is that the electrode material is doped with transition metal, namely the electrode material is doped by the scattering area material, so the adaptation degree of the electrode area and the scattering area is high, the mismatch rate is low, the splicing and the construction of the electrode area and the scattering are convenient, and the cost is relatively saved.
2. And taking the transition metal doped two-dimensional intrinsic semiconductor material tellurium as a material of the electrode region, wherein the electron transport track of the left electrode region and the right electrode region under zero stress is opposite to the electron transport track of the left electrode region and the right electrode region under tensile stress. That is, the structure changes the physical and chemical properties of the magnetic tunnel junction under the action of strain, and the physical and chemical properties are embodied on the current: the spin orbits contributed by the current are different at different stresses. Therefore, compared with the traditional magnetic tunnel junction designed by the traditional Van der Waals material, the magnetic tunnel junction provided by the invention can show obvious tunneling magneto-resistance effect under the action of stress, which is beneficial to the application of the magnetic tunnel junction in a memory unit, a processor unit and the like. In addition, the intrinsic semiconductor material has high carrier mobility, which is beneficial to improving the performance of the existing magnetic tunnel junction.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a structural side view of a magnetic tunnel junction;
FIG. 2 is a top view of a structure of a magnetic tunnel junction;
FIG. 3 is a plot of current versus voltage for zero stress in example 1;
FIG. 4 is a plot of current versus voltage for tensile stress in example 1;
fig. 5 is a schematic diagram of the energy band situation of a magnetic tunnel junction with three doping ratios.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In addition, the technical solutions of the embodiments of the present invention may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered as not existing, and not falling within the scope of protection claimed by the present invention.
The invention provides a magnetic tunnel junction, which comprises a central scattering region, and a left electrode region and a right electrode region which are directly connected with the central scattering region, wherein the material of the central scattering region is tellurium alkene, and the material of the left electrode region and the material of the right electrode region are transition metal doped tellurium alkene. As shown in fig. 1 and 2, side and top views of the magnetic tunnel junction of the present invention are provided.
The left electrode region and the right electrode region are under the same stress field. The two electrode regions must be in the same stress field to ensure the same degree of band inversion. If the stress fields on two sides are different, the energy bands are turned differently, so that under the action of voltage, current is difficult to generate or the generated current is low.
Preferably, the transition metal doped tellurium alkene has a doping ratio of 1/6 to 1/3. A doping ratio higher than 1/3 causes deformation of the doped structure, is difficult to prepare, and an excessively low doping ratio causes difficulty in transition of electrons. The magnetic tunnel junction energy band prepared by adopting the doping proportion in the scheme is reduced, a Dirac-like structure is formed, and electron transition is facilitated. In conclusion, the proportion of the scheme is favorable for reducing the effective mass and increasing the carrier concentration.
Preferably, the tellurium alkene is beta-tellurium alkene; the transition metal doped position is the bridge position of beta-tellurium alkene. In elevation, the bridging atom is between the top and bottom positions and is therefore referred to as a bridging position.
Preferably, the transition metal is vanadium, titanium or scandium.
Preferably, the left electrode region and the right electrode region are made of the same material. First, the same material can reduce costs in experimentation or production. Second, the same material can facilitate the same deformation and band change under stress. Thirdly, the scheme is characterized in that the whole device can be made of tellurium, and the difference is that the scattering area is single-layer tellurium, the electrode area is tellurium doped with transition metal elements, and the structure is simple and the preparation is convenient.
The invention also provides a preparation method of the magnetic tunnel junction, which comprises the following steps:
s1, heating original tellurium and a transition metal atom source in a high-vacuum reaction chamber, then introducing hydrogen, and depositing a layer of transition metal doped tellurium alkene film on a substrate;
s2, stopping heating the transition metal atom source, continuously introducing hydrogen, heating original tellurium, and depositing a layer of tellurium alkene film on the transition metal doped tellurium alkene film;
and S3, heating the original tellurium and the transition metal atom source again at the same time, continuously introducing hydrogen, and depositing a layer of transition metal doped tellurium thin film on the tellurium thin film to obtain a transition metal doped tellurium/transition metal doped tellurium sandwich structure, namely a magnetic tunnel junction.
It will be appreciated that the thickness of the component deposited each time is the length of the corresponding respective region.
Preferably, the material of the substrate is gold, silver, platinum, iron or aluminum. The substrate material is selected from metal materials which are easy to deform under heating.
Preferably, in S1, the distance between the original tellurium and the source of transition metal atoms is 2-10cm;
the heating temperature of original tellurium is 350-450 ℃;
the heating temperature of the transition metal atom source is 500-800 ℃;
in S1, S2 and S3, the deposition time is 20-40min.
Preferably, in S1, the distance between the original tellurium and the source of transition metal atoms is 5cm.
The invention also proposes an application of a magnetic tunnel junction, applied to a memory, a processor, a logic device or a sensor.
Example 1:
as shown in fig. 1, in this embodiment, the magnetic tunnel junction of the present invention includes a single layer of tellurium in the central scattering region, and VTe2 in the left and right electrode regions. Tellurium olefins in which VTe2 of the left and right electrode regions is the central scattering region are prepared using transition metal vanadium doping. Wherein the transition metal vanadium is vaporized by heating by means of an electric arc furnace apparatus.
Wherein the area of the single-side electrode is 1.32 nanometers, and the central scattering area is 0.44 nanometers. In this embodiment, the device length is 3.1 nanometers. The left electrode area is connected with the negative electrode of the power supply, and the right electrode area is connected with the positive electrode of the power supply. In this embodiment, the electrode regions may have different lengths, and the only requirement to be fixed is that the scattering region length needs to be 0.44nm, and the electrode region length is only the test length, which can be theoretically increased, and has no influence on the result. The ratio of the length of the single-side electrode to the length of the scattering region is 3:1, the electrode can be increased to 4:1 or 5:1.
the substrate of the device is gold, the gold in the case of 300 Kelvin temperature is taken as an initial state, zero stress is recorded, and the gold in the state of higher than 300 Kelvin temperature is taken as a tensile stress.
In this embodiment, the components of the magnetic tunnel junction are in a uniform environment.
FIG. 2 is a graph of current versus voltage for zero strain with bias voltages in the range of 0.05 to 0.15V, with bias voltage on the abscissa and current on the ordinate. The current is divided into total current (total), spin up current (spin up), spin down current (spin down). The total current is the sum of the spin-up and spin-down currents. In fig. 2, the current increases with increasing voltage, exhibiting a linear function change. In the case of zero stress shown in fig. 2, the current is mainly contributed by electrons with spin down, with a current of 300nA at the most.
FIG. 3 is a graph of current versus voltage for a 4.75% strain in tension with bias voltage in the range of 0.05 to 0.15V, with bias voltage on the abscissa and current on the ordinate. The current is divided into total current (total), spin up current (spin up), spin down current (spin down). The total current is the sum of the spin-up and spin-down currents. In fig. 2, the current increases with increasing voltage, essentially exhibiting a linear function change. In the case of zero strain shown in fig. 3, the current is mainly contributed by electrons in the spin direction. The current is at most 800nA
It can be seen that the current increases significantly after stretching.
Comparative example 1
Comparative example 1 differs from example 1 only in that: the doping ratio of the transition metal V in example 1 was 1/3, and the doping ratio of the transition metal V in comparative example 1 was 1/27.
Comparative example 2
Comparative example 2 differs from example 1 only in that: the doping ratio of the transition metal V in example 1 was 1/3, and the doping ratio of the transition metal V in comparative example 1 was 1/12.
By testing the doping of the three ratios 1/27 (3 x 1), 1/12 (2 x 1) and 1/3 (1 x 1), it was found that with the 1/27 and 1/12 doping ratios, a larger band gap still exists, about 0.92eV, which is detrimental to the electron cross-fischer transition, but at a doping ratio of 1/3 a direct band gap of dirac-like structure appears in the band gap and the band gap is reduced to 0.33eV, which is significantly lower than before. Such a small band gap, compressing the lattice using external forces, may form a band structure similar to graphene, enabling significant current flow in the magnetic tunnel junction. As shown in fig. 5, a schematic diagram of the band profile of a magnetic tunnel junction is provided with three doping ratios.
The foregoing description of embodiments of the invention has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the various embodiments described. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (10)
1. A magnetic tunnel junction comprising:
a center scattering region, and left and right electrode regions directly connected to the center scattering region;
the material of the central scattering region is tellurium alkene;
the left electrode region and the right electrode region are transition metal doped tellurium alkene;
the left electrode region and the right electrode region are under the same stress field.
2. The magnetic tunnel junction of claim 1 wherein the transition metal doped tellurium is doped in a ratio of 1/6 to 1/3.
3. The magnetic tunnel junction of claim 1 wherein the tellurium alkene is β -tellurium alkene;
the transition metal doped position is the bridge position of beta-tellurium alkene.
4. The magnetic tunnel junction of claim 1 wherein the transition metal is vanadium, titanium or scandium.
5. The magnetic tunnel junction of claim 1 wherein the left and right electrode regions are of the same material.
6. The method of manufacturing a magnetic tunnel junction according to any one of claims 1 to 5, characterized in that the method comprises:
s1, heating original tellurium and a transition metal atom source in a high-vacuum reaction chamber, then introducing hydrogen, and depositing a layer of transition metal doped tellurium alkene film on a substrate;
s2, stopping heating the transition metal atom source, continuously introducing hydrogen, heating original tellurium, and depositing a layer of tellurium alkene film on the transition metal doped tellurium alkene film;
and S3, heating the original tellurium and the transition metal atom source again at the same time, continuously introducing hydrogen, and depositing a layer of transition metal doped tellurium thin film on the tellurium thin film to obtain a transition metal doped tellurium/transition metal doped tellurium sandwich structure, namely a magnetic tunnel junction.
7. The method of claim 6, wherein the substrate is gold, silver, platinum, iron or aluminum.
8. The method according to claim 6, wherein in S1, the distance between the original tellurium and the source of the transition metal atoms is 2-10cm;
the heating temperature of original tellurium is 350-450 ℃;
the heating temperature of the transition metal atom source is 500-800 ℃;
in S1, S2 and S3, the deposition time is 20-40min.
9. The method according to claim 6, wherein in S1, the distance between the original tellurium and the source of the transition metal atoms is 5cm.
10. The use of a magnetic tunnel junction according to any of claims 1-5, wherein the magnetic tunnel junction is used in a memory, a processor, a logic device or a sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310660242.2A CN116615088A (en) | 2023-06-06 | 2023-06-06 | Magnetic tunnel junction, preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310660242.2A CN116615088A (en) | 2023-06-06 | 2023-06-06 | Magnetic tunnel junction, preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116615088A true CN116615088A (en) | 2023-08-18 |
Family
ID=87685314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310660242.2A Pending CN116615088A (en) | 2023-06-06 | 2023-06-06 | Magnetic tunnel junction, preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116615088A (en) |
-
2023
- 2023-06-06 CN CN202310660242.2A patent/CN116615088A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10529775B2 (en) | Two-terminal spintronic devices | |
| Biju et al. | DC conductivity of consolidated nanoparticles of NiO | |
| US20080152952A1 (en) | Organic spin transport device | |
| US11937513B2 (en) | Magnon spin valve, magnon sensor, magnon field effect transistor, magnon tunnel junction and magnon memory | |
| KR101897916B1 (en) | Magnetic Tunnel Junction Device with a magnetic layer of easy-cone state | |
| Shuto et al. | A new spin-functional metal–oxide–semiconductor field-effect transistor based on magnetic tunnel junction technology: Pseudo-spin-mosfet | |
| Zhou et al. | Controlling vertical magnetization shift by spin–orbit torque in ferromagnetic/antiferromagnetic/ferromagnetic heterostructure | |
| Zhang et al. | Remarkable negative differential resistance and perfect spin-filtering effects of the indium triphosphide (InP 3) monolayer tuned by electric and optical ways | |
| Suzuki et al. | Room temperature magnetoresistance in an organic spin valve with an aromatic hydrocarbon macrocycle | |
| RU2554612C2 (en) | High-frequency superconducting memory element | |
| US10644227B2 (en) | Magnetic tunnel diode and magnetic tunnel transistor | |
| CN116615088A (en) | Magnetic tunnel junction, preparation method and application thereof | |
| WO2002041412A1 (en) | Switch device without dielectric barrier using superlattice | |
| Alborghetti et al. | Electron and spin transport studies of gated lateral organic devices | |
| Edelman et al. | Magnetic and magneto-optical properties of Ni–Ge layered films | |
| Kim et al. | Electrical detection of the inverse Edelstein effect on the surface of Sm B 6 | |
| Sarkar et al. | Spin-dependent giant junction magnetoresistance in simple Fe/p-Si (001) Schottky heretrojunction at low temperature | |
| JP4180456B2 (en) | Method for producing magnetic oxide thin film | |
| Androulakis et al. | Indium oxide as a possible tunnel barrier in spintronic devices | |
| Bi et al. | Controlling exchange interactions and emergent magnetic phenomena in layered 3d‐orbital ferromagnets | |
| Shi et al. | Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance | |
| Chapline et al. | Spin filter based tunnel junctions | |
| Tanoue et al. | Anomalous behavior of Co insertion to Al2O3 in CoFe/Al2O3/NiFe tunnel junctions | |
| JP7228886B2 (en) | circuit array | |
| Tarasov et al. | Spin Accumulation in the Fe 3 Si/n-Si Epitaxial Structure and Related Electric Bias Effect |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |