CN116615038A - Organic electroluminescent device and display device - Google Patents

Abstract

The invention relates to an organic electroluminescent device and a display device, belonging to the technical field of organic electroluminescence. The organic electroluminescent device comprises an organic luminescent layer, wherein the organic luminescent layer comprises a first main body material, a second main body material, a phosphorescent sensitizer and a resonance type narrow spectrum fluorescent material, the first main body material and the second main body material can form an exciplex, the resonance type narrow spectrum fluorescent material has a narrow spectrum emission characteristic, and the Stokes shift of the resonance type narrow spectrum fluorescent material meets the following conditions: lambda is less than or equal to 60nm, and half-peak width meets the following conditions: FWHM is less than or equal to 60nm. The invention can realize 100% exciton utilization rate of the device, and the prepared electroluminescent device has the characteristics of high efficiency and long service life.

Description

Organic electroluminescent device and display device

Technical Field

The invention relates to an organic electroluminescent device and a display device, which has an organic electroluminescent device involving thermally activated delayed fluorescence using phosphorescent material sensitized as a luminescent dye, and belongs to the technical field of organic electroluminescent.

Background Art

Organic Light Emitting Diode (OLED) is a device that is driven by current to emit light. Its main characteristics come from the organic light-emitting layer. When an appropriate voltage is applied, electrons and holes will combine in the organic light-emitting layer to generate excitons and emit light of different wavelengths according to the characteristics of the organic light-emitting layer. At present, the light-emitting layer is composed of a main material and a doped dye, and the dye is mostly selected from traditional fluorescent materials, phosphorescent materials, or thermally activated delayed fluorescence (TADF) materials.

Specifically, traditional fluorescent materials have the defect of being unable to utilize triplet excitons. Although phosphorescent materials can achieve 100% energy utilization efficiency by introducing heavy metal atoms, such as iridium or platinum, to achieve the transition of singlet excitons to the triplet state, heavy metals such as iridium and platinum are very scarce, expensive and easily cause environmental pollution. Therefore, phosphorescent materials cannot become the first choice for dyes.

Thermally Activated Delayed Fluorescence (TADF) materials. Compared with phosphorescent materials and traditional fluorescent materials, TADF materials can achieve reverse intersystem crossing of triplet excitons to singlet states by absorbing ambient heat, and then emit fluorescence from the singlet state, thereby achieving 100% utilization of excitons without the need for any heavy metals. Therefore, at present, 100% energy utilization efficiency is mainly achieved by doping TADF materials with main materials. Transition to singlet state, and singlet excitons can return to the ground state to emit fluorescence, thereby achieving 100% utilization of excitons without the need for any heavy metals. At present, higher luminous efficiency is mainly achieved by doping TADF materials with main materials. However, most TADF materials themselves also have certain defects, such as too wide luminous spectrum, large device roll-off, short life and other problems.

Summary of the invention

In order to solve the above technical problems, the present invention provides an organic electroluminescent device, comprising a substrate, a first electrode, a second electrode and an organic functional layer, wherein the organic functional layer comprises an organic light-emitting layer, and the organic light-emitting layer comprises a host material, a phosphorescent sensitizer and a resonant narrow spectrum fluorescent material used as a light-emitting dye, characterized in that:

The host material consists of a first host compound and a second host compound, and the first host compound and the second host compound form an exciplex;

The resonant narrow spectrum fluorescent material is a material having narrow-band spectrum emission characteristics, and the Stokes shift of the resonant narrow spectrum fluorescent material satisfies: λ≤60nm, and the half-peak width satisfies: FWHM≤60nm;

The resonant narrow spectrum fluorescent material is a compound whose core structure adopts a resonant molecular structure formed by a boron atom and a nitrogen atom, or a compound whose core structure adopts a resonant molecular structure formed by a boron atom and an oxygen, sulfur, or selenium atom, or a compound whose core structure adopts a carbonyl group and a nitrogen atom to form a resonant molecular structure, or a compound whose core structure adopts a carbonyl group and an oxygen, sulfur, or selenium atom to form a resonant molecular structure, or a compound whose core structure adopts an indolecarbazole-type resonant molecular structure, and the singlet energy level S1 and the triplet energy level T1 of the resonant narrow spectrum fluorescent material satisfy the formula:

ΔEst＝S1-T1≤0.4eV；

The singlet energy level and triplet energy level of the second host compound are both higher than the triplet energy level of the phosphorescent sensitizer, and the singlet energy level and triplet energy level of the exciplex formed by the first host compound and the second host compound are also higher than the triplet energy level of the phosphorescent sensitizer;

The triplet energy level of the exciplex is higher than the triplet energy level of the resonance-type narrow-spectrum fluorescent material;

The triplet energy level of the phosphorescent sensitizer is higher than the triplet energy level of the resonance-type narrow-spectrum fluorescent material.

In the organic electroluminescent device of the present invention, under electrical excitation, the singlet excitons of the exciplex formed by the first host compound and the second host compound transfer energy to the phosphorescent sensitizer through Forrest energy transfer, the triplet excitons of the exciplex formed by the first host compound and the second host compound form singlet excitons through reverse intergap crossing and then transfer energy to the phosphorescent sensitizer through Forrest energy transfer, or directly transfer energy to the phosphorescent sensitizer through Dexter energy transfer.

Compared with the traditional host-guest combination mode, the organic electroluminescent device of the present invention can effectively balance the carriers inside the device, reduce the exciton quenching effect, and improve the carrier recombination rate of the device; at the same time, the exciton complex formed by the first and second host compounds can effectively reduce the driving voltage and improve the device efficiency and working stability. On the other hand, the multiple energy transfer pathways in the system of the present invention can reduce the accumulation of long-lived excitons, thereby inhibiting the energy loss and stability reduction caused by the annihilation process of the excitons. As shown in Figure 1 of the specification, the triplet Dexter energy transfer (DET) between the exciton complex and the phosphorescent material is particularly important in the energy transfer diagram, especially in the case of a high proportion of initial triplet states generated by electroexcitation in the device, because it can effectively convert the long-lived TADF triplet into a shorter-lived phosphorescent triplet exciton and transfer it to a narrow spectrum dye, so that the prepared electroluminescent device has the characteristics of high efficiency, high color purity and long life at high brightness.

Further, in the organic electroluminescent device of the present invention, the first host compound is a hole transport type host, having a highest occupied orbital E _HOMO ^P and a lowest unoccupied orbital E _LUMO ^P , and having a first singlet energy level S ₁ ^P and a first triplet energy level T ₁ ^P (calculated based on the Onset values of the fluorescence emission spectrum and the phosphorescence emission spectrum at 77K);

The second host compound is an electron transport host, having a highest occupied orbital E _HOMO ^N and a lowest unoccupied orbital E _LUMO ^N , and having a first singlet energy level S ₁ ^N and a first triplet energy level T ₁ ^N (calculated based on the Onset values of the fluorescence emission spectrum and the phosphorescence emission spectrum at 77K);

The exciplex formed by the first host compound and the second host compound has a first singlet energy level S ₁ ^EX and a first triplet energy level T ₁ ^EX (calculated according to the Onset value of the fluorescence emission spectrum and the phosphorescence emission spectrum at 77K), and the first host compound, the second host compound and the formed exciplex satisfy the following equation:

S ₁ ^EX ━T ₁ ^EX ≤0.3Ev;

E _HOMO ^P ＞E _HOMO ^N ;

E _LUMO ^P ＞ E _LUMO ^N ;

E _HOMO ^P -E _HOMO ^N >0.2eV;

_ELUMOP ^- _ELUMON >0.3eV ^;

S ₁ ^P ＞S ₁ ^N ≧S ₁ ^EX .

Furthermore, in the organic electroluminescent device of the present invention, the phosphorescent sensitizer has a first singlet energy level S ₁ ^Phos and a first triplet energy level T ₁ ^Phos (S ₁ ^Phos is calculated based on the Onset value of the tail absorption in the longest wavelength direction of the ultraviolet-visible absorption spectrum, and T ₁ ^Phos is calculated based on the Onset value of the phosphorescence emission spectrum at 77K), which satisfies the following equation:

S ₁ ^EX ＞S ₁ ^Phos

T ₁ ^EX >T ₁ ^Phos .

Furthermore, in the organic electroluminescent device of the present invention, the first host compound is selected from the compound shown in the following formula 1-1:

In formula (1-1), Ar ⁴ is selected from a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C3-C60 heteroaryl group;

R ₀₀₁ and R ₀₀₂ represent a substituent group from monosubstituted to the maximum allowed number, and R ₀₀₁ and R ₀₀₂ are each independently selected from one of hydrogen, deuterium, cyano, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C3-C20 cycloalkyl, substituted or unsubstituted C1-C20 silyl, substituted or unsubstituted C6-C30 arylamino, substituted or unsubstituted C7-C30 aralkyl, substituted or unsubstituted C3-C30 heteroarylamino, substituted or unsubstituted C6-C60 aryl, and substituted or unsubstituted C3-C60 heteroaryl; and two adjacent ones of R ₀₀₁ and R ₀₀₂ are not connected or connected to form a ring;

When there are substituents on the above-mentioned groups, the substituents are independently selected from any one of deuterium, halogen, cyano, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 aryloxy, C6-C60 aryl, and C5-C60 heteroaryl.

Furthermore, in the organic electroluminescent device of the present invention, the first host compound has a structure as described in Formula (1-2) or Formula (1-3):

In formula (1-2) and formula (1-3), m and n are each independently an integer of 1 to 4;

The definitions of Ar ⁴ , R ₀₀₁ and R ₀₀₂ are the same as those in formula (1-1);

Ar ⁵ is selected from a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C3-C60 heteroaryl group;

The L is selected from a single bond, a substituted or unsubstituted C6-C60 aryl group, or a substituted or unsubstituted C3-C60 heteroaryl group;

_R003 and _R004 represent a substituent group ranging from monosubstituted to the maximum allowed number, and _R001 and _R002 are each independently selected from one of hydrogen, deuterium, cyano, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C3-C20 cycloalkyl, substituted or unsubstituted C1-C20 silyl, substituted or unsubstituted C6-C30 arylamino, substituted or unsubstituted C7-C30 aralkyl, substituted or unsubstituted C3-C30 heteroarylamino, substituted or unsubstituted C6-C60 aryl, and substituted or unsubstituted C3-C60 heteroaryl;

When there are substituents on the above groups, the substituents are independently selected from any one of deuterium, halogen, cyano, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 aryloxy, C6-C60 aryl, and C5-C60 heteroaryl;

Preferably, Ar ⁴ and Ar ⁵ are each independently selected from a combination of one or more of substituted or unsubstituted benzene, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted triphenylene, substituted or unsubstituted dibenzofuran, substituted or unsubstituted dibenzothiophene, substituted or unsubstituted indole, substituted or unsubstituted indolecarbazole, substituted or unsubstituted carbazole, and substituted or unsubstituted fluorene; when substituents are present on Ar ⁴ and Ar ⁵ , the substituents are independently selected from any one of deuterium, halogen, cyano, C1-C10 chain alkyl, C3-C10 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C30 aryloxy, C6-C30 aryl, and C5-C30 heteroaryl.

Furthermore, in the organic electroluminescent device of the present invention, the second host compound is a nitrogen-containing aromatic heterocyclic compound having a structure as shown in formula (2-1):

In formula (2-1), Q ₁ to Q ₅ are independently selected from nitrogen or CR ₀₁₁ , and R ₀₁₁ is independently selected from one of hydrogen, deuterium, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C3-C20 cycloalkyl, substituted or unsubstituted C2-C20 alkenyl, substituted or unsubstituted C1-C20 silyl, substituted or unsubstituted C6-C60 arylsilyl, substituted or unsubstituted C6-C30 arylamino, substituted or unsubstituted C7-C30 aralkyl, substituted or unsubstituted C3-C30 heteroarylamino, substituted or unsubstituted C6-C60 aryl, and substituted or unsubstituted C3-C60 heteroaryl; adjacent R ₀₁₁ are not connected or connected and fused to form a ring;

When there is a substituent on the above R ₀₁₁ , the substituent is independently selected from any one of deuterium, halogen, cyano, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 aryloxy, C6-C60 aryl, and C5-C60 heteroaryl;

Preferably, one or two of the Q ₁ to Q ₅ are nitrogen; more preferably, two of the Q ₁ to Q ₅ are nitrogen;

Preferably, the R ₀₁₁ is independently selected from hydrogen, deuterium, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, phenyl, naphthyl, anthracenyl, benzanthryl, phenanthrenyl, triphenylene, pyrenyl, chrysene, peryl, fluoranthenyl, tetraphenylene, pentacene, benzopyrenyl, biphenyl, phenylene, terphenylene, triphenylene, quaternaryl, fluorenyl, spirobifluorenyl, dihydrophenanthren ... 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, 1,2-dihydropyrenyl, oxalinoimidazolyl, oxazolyl, benzoxazolyl, naphthoxazolyl, anthrazolyl, phenanthroxazolyl, 1,2-thiazolyl, 1,3-thiazolyl, benzothiazolyl, pyridazinyl, benzopyridazinyl, pyrimidinyl, benzopyrimidinyl, quinoxalinyl, 1,5-diazaanthryl, 2,7-diazapyrenyl, 2,3-diazapyrenyl, 1,6-diazapyrenyl, 1,8-diazapyrenyl, 4,5-diazapyrenyl, 4,5,9,10-tetraazaperyl, pyrazinyl, phenazinyl, phenothiazinyl, naphthyridinyl, azacarbazolyl, benzocarbolinyl, phenanthrolinyl, 1,2,3-triazolyl, 1,2,4-triazolyl 1,2,3-triazine, 1,2,4-triazine, 1,2,3-triazine, tetrazolyl, 1,2,4,5-tetrazine, 1,2,3,4-tetrazine, 1,2,3,5-tetrazine, purinyl, pteridinyl, indolizinyl, benzothiadiazolyl, 9,9-dimethylacridinyl, halogenated benzene, cyanobenzene, trifluoromethylbenzene or a combination of two thereof;

More preferably, the R ₀₁₁ is independently selected from hydrogen, deuterium, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, phenyl, halogenated benzene, cyanobenzene, trifluoromethylbenzene naphthyl, anthracenyl, benzanthryl, phenanthrenyl, triphenylenyl, pyrenyl, chrysene, peryl, fluoranthenyl, naphthyl, pentacene, benzopyrenyl, biphenyl, phenylene, terphenyl, triphenylene, quaternaryl, fluorenyl, spirobifluorenyl, dihydrophenanthrenyl , dihydropyrenyl, tetrahydropyrenyl, cis- or trans-indenofluorenyl, trimerized indenyl, isotrimerized indenyl, spirotrimerized indenyl, spiroisotrimerized indenyl, furanyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, thienyl, benzothienyl, isobenzothienyl, dibenzothienyl, pyrrolyl, isoindolyl, carbazolyl, indenocarbazolyl, pyridyl, quinolyl, isoquinolyl, acridinyl, phenanthridinyl, benzo-5,6-quinolyl, benzo-6,7-quinolyl, benzo-7,8-quinolyl or a combination of two thereof.

Furthermore, in the organic electroluminescent device of the present invention, the resonant narrow spectrum fluorescent material is selected from the structure shown in any one of the following formulas (1), (2), (3), (4) or (5):

In formula (1):

The R ²¹ to R ²⁸ are independently selected from hydrogen, deuterium or one of the following substituted or unsubstituted groups: halogen, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C1-C10 thioalkoxy, carbonyl, carboxyl, nitro, cyano, amino, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 monocyclic aryl, C6-C60 condensed aryl, C6-C60 aryloxy, C5-C60 monocyclic heteroaryl or C5-C60 condensed heteroaryl, and R ²¹ to R Two adjacent groups in ²⁸ are not connected or bonded to each other and together with the adjacent benzene ring form one of a C5-C30 five-membered or six-membered aryl ring or a C5-C30 five-membered or six-membered heteroaryl ring, and at least one hydrogen in the formed ring structure can be substituted by any one of a C6-C30 arylamino, a C3-C30 heteroarylamino, a C6-C60 monocyclic aryl, a C6-C60 condensed aryl, a C6-C60 aryloxy, a C5-C60 monocyclic heteroaryl, a C5-C60 condensed heteroaryl, a halogen, a C1-C30 chain alkyl, a C3-C30 cycloalkyl, a C1-C10 alkoxy, a C1-C10 thioalkoxy, a carbonyl, a carboxyl, a nitro, a cyano, and an amino group;

The X ⁵ and X ⁶ are independently selected from NR, the R can be bonded to the adjacent ring structure through -O-, -S-, -C(-R')2- or a single bond, and the R and R' are independently selected from one of the following substituted or unsubstituted groups: C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C30 haloalkyl, C1-C30 alkoxy, C2-C30 alkenyl, C3-C30 alkynyl, C6-C60 aryl, C6-C60 aryloxy, C5-C60 heteroaryl;

In formula (1), ring F represents a group which is simultaneously fused to a six-membered ring structure consisting of B and ^X5 and a six-membered ring structure consisting of B and ^X6 , and the ring F is selected from a substituted or unsubstituted C6-C60 aromatic ring and a substituted or unsubstituted C5-C60 heteroaromatic ring containing a nitrogen atom;

When the above groups have substituents, the substituents are independently selected from one of deuterium, halogen, cyano, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C30 aryl, and C3-C30 heteroaryl;

In formula (2), X ¹ , X ² , X ³ and X ⁴ are independently NR ₁ or O, and X ¹ , X ² , X ³ and X ⁴ are not O at the same time, and X ¹ , X ² , X ³ and X ⁴ are not NR ₁ at the same time;

The _R1 is selected from one of the following substituted or unsubstituted groups: a C6-C60 monocyclic aromatic group, a C6-C60 condensed aromatic group, a C5-C60 monocyclic heteroaromatic group or a C5-C60 condensed heteroaromatic group; the _R1 is connected to the adjacent benzene ring through a single bond or not, or _R1 is fused with the adjacent benzene ring to bond with each other to form a ring;

The ^X1 and ^X4 may be connected by a single bond, or may be fused to form a ring; the ^X2 and ^X3 may be connected by a single bond, or may be fused to form a ring;

Said ^Ra , ^Rb , ^Rc and ^Rd each independently represent a single substituent to the maximum permissible substituent, and are each independently selected from hydrogen, deuterium or one of the following groups: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, phenyl, naphthyl, anthracenyl, benzanthryl, phenanthryl, triphenylene, pyrenyl, chrysene, peryl, fluoranthenyl, naphthyl, pentacene, benzopyrenyl, biphenyl, phenylene, terphenyl, triphenylene, quaternary, fluorenyl, spirobifluorenyl, adamantane, fluorophenyl, methylphenyl, trimethylphenyl, cyanophenyl; said ^Ra Adjacent two of R ^b , R ^c and R ^d may be connected by a single bond or not, or may be fused to form a ring;

When the above groups have substituents, the substituents are independently selected from any one of deuterium, halogen, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C1-C10 thioalkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 monocyclic aryl, C6-C60 condensed ring aryl, C6-C60 aryloxy, C5-C60 monocyclic heteroaryl, and C5-C60 condensed ring heteroaryl;

In formula (3), the dashed line represents a single bond connection or no connection;

^X1 and ^X2 are independently N or B;

Ring A represents a benzene ring, a naphthalene ring or an anthracene ring;

Ring B and Ring C each independently represent a benzene ring, a naphthalene ring or an anthracene ring;

Ring D and Ring E each independently represent a C8-C60 condensed aromatic hydrocarbon;

Said _RA , _RB , _RC , _RD and _RE respectively independently represent a substituent group from a single substituent group to the maximum permissible number of substituents, and _RA , _RB , _RC , _RD and _RE are each independently selected from one of hydrogen, deuterium, halogen, carbonyl, carboxyl, nitro, cyano, amino, silicon, substituted or unsubstituted C1-C36 chain alkyl, substituted or unsubstituted C3-C36 cycloalkyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 thioalkoxy, substituted or unsubstituted C6-C30 arylamino, substituted or unsubstituted C3-C30 heteroarylamino, substituted or unsubstituted C6-C60 monocyclic aryl or condensed ring aryl, substituted or unsubstituted C6-C60 aryloxy, and substituted or unsubstituted C5-C60 heteroaryl;

Said _RA , _RB , _RC , _RD and _RE are each connected to the connected ring A, ring B, ring C, ring D and ring E through a single bond, or _RA , _RB , _RC , _RD and _RE are each fused to the connected ring A, ring B, ring C, ring D and ring E;

When the above-mentioned _RA , _RB , _RC , _RD and _RE have substituents, the substituents are independently selected from one of deuterium, halogen, nitro, cyano, amino, carbonyl, carboxyl, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C1-C10 thioalkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 aryl, C6-C60 aryloxy and C5-C60 heteroaryl;

In formula (4) and formula (5), Y ₁ and Y ₂ are independently O, S or N; A ₁ and A ₂ are independently single bonds or O;

Z ₁ -Z ₁₂ are each independently represented by CR ₄ ; R ₄ are each independently selected from any one of hydrogen, deuterium, C1-C10 alkyl, C3-C10 cycloalkyl, and C6-C30 aryl;

The ring D is represented by hydrogen or a structure represented by the following formula (a) or (b), and the ring E is represented by a structure represented by the following formula (a) or (b):

In formula (a) and formula (b), the dotted line represents the connection position with the parent core of formula (1) or formula (2);

In formula (a), Y ₃ represents Y ₁ and/or Y ₂ in formula (1) or formula (2);

In formula (a), X ₁ to X ₁₁ are each independently CR ₅ ;

In formula (b), Y ₄ represents Y ₁ and/or Y ₂ in formula (1) or (2), and Y ₅ represents O, S or N;

In formula (b), X ₂₁ to X ₃₅ are each independently CR ₇ ;

_R5 and _R7 are independently selected from any one of hydrogen, deuterium, C1-C10 alkyl, C3-C10 cycloalkyl, and C6-C30 aryl;

Preferably, in formula (1), ring F represents a substituted or unsubstituted C13-C60 nitrogen-containing heteroaromatic ring; in formula (1), R ²¹ to R ²⁸ are each independently selected from hydrogen, deuterium, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, phenyl, naphthyl, anthracenyl, benzanthryl, phenanthryl, triphenylenyl, pyrenyl, chrysene, peryl, fluoranthenyl, tetraphenylene, pentacene, benzopyrenyl, biphenyl, phenylene, terphenylene, triphenylene, quaternaryl, fluorenyl, spirobifluorenyl, dihydrophenanthryl, dihydropyrenyl, tetrahydropyrenyl, cis- or trans-indenofluorenyl, trimerized indenyl, isotrimerized indenyl, spirotrimerized indenyl, spiroisotrimerized indenyl, furanyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, thienyl, benzothienyl, isobenzothienyl, dibenzothienyl, pyrrolyl, isoindolyl, carbazolyl, indenocarbazolyl, pyridyl, quinolyl, isoquinolyl, acridinyl, phenanthridinyl, benzo-5,6-quinolyl, benzo-6,7-quinolyl, benzo-7,8-quinolyl, pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, naphthoimidazolyl, phenanthroimidazolyl, pyridoimidazolyl, pyrazinoimidazolyl, quinoxalinoimidazolyl, um oxazolyl, benzoxazolyl, naphthoxazolyl, anthrazolyl, phenanthrazolyl, 1,2-thiazolyl, 1,3-thiazolyl, benzothiazolyl, pyridazinyl, benzopyridazinyl, pyrimidinyl, benzopyrimidinyl, quinoxalinyl, 1,5-diazaanthryl, 2,7-diazapyrenyl, 2,3-diazapyrenyl, 1,6-diazapyrenyl, 1,8-diazapyrenyl, 4,5-diazapyrenyl, 4,5,9,10-tetraazaperyl, pyrazinyl, phenazinyl, phenothiazinyl, naphthyridinyl, azacarbazolyl, benzocarbolinyl, phenanthrolinyl, 1,2,3-triazolyl, 1,2,4-triazolyl, benzotriazolyl, 1,2, 3-oxadiazolyl, 1,2,4-oxadiazolyl, 1,2,5-oxadiazolyl, 1,2,3-thiadiazolyl, 1,2,4-thiadiazolyl, 1,2,5-thiadiazolyl, 1,3,4-thiadiazolyl, 1,3,5-triazinyl, 1,2,4-triazinyl, 1,2,3-triazinyl, tetrazolyl, 1,2,4,5-tetrazinyl, 1,2,3,4-tetrazinyl, 1,2,3,5-tetrazinyl, purinyl, pteridinyl, indolizinyl, benzothiadiazolyl, 9,9-dimethylacridinyl, (poly)halogenated benzene, (poly)cyanobenzene, (poly)trifluoromethylbenzene, etc., or a combination of the above two groups.

Furthermore, in the organic electroluminescent device of the present invention, the resonant narrow spectrum fluorescent material is selected from the structure shown in any one of the following formulas (6), (7), (8) and (9):

In formula (6), R is selected from one of the following substituted or unsubstituted groups: C1-C10 alkyl, C6-C30 monocyclic aromatic hydrocarbon ^or condensed aromatic hydrocarbon; ^R1 , ^R2 , R3, ^R4 , ^R5 , ^R5 , ^R7 , ^R8 , ^R9 , R ¹⁰ are independently selected from hydrogen, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, chrysene, peryl, fluoranthenyl, tetraphenyl, pentacene, benzopyrenyl, biphenyl, terphenyl, quaterphenyl, fluorenyl, spirobifluorenyl, dihydrophenanthrenyl, dihydropyrenyl, tetrahydropyrenyl, cis- or trans-indenofluorenyl, trimerized indenyl, isotrimerized indenyl, furan yl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, thienyl, benzothienyl, isobenzothienyl, dibenzothienyl, pyrrolyl, isoindolyl, carbazolyl, indenocarbazolyl, pyridyl, quinolyl, isoquinolyl, acridinyl, phenanthridinyl, benzo-5,6-quinolyl, benzo-6,7-quinolyl, benzo-7,8-quinolyl, pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, naphthoimidazolyl, phenanthroimidazolyl, pyridoimidazolyl oxazolyl, pyrazinoimidazolyl, quinoxalin imidazolyl, oxazolyl, benzoxazolyl, naphthoxazolyl, anthrazolyl, phenanthrazolyl, 1,2-thiazolyl, 1,3-thiazolyl, benzothiazolyl, pyridazinyl, benzopyridazinyl, pyrimidinyl, benzopyrimidinyl, quinoxalinyl, 1,5-diazaanthryl, 2,7-diazapyrenyl, 2,3-diazapyrenyl, 1,6-diazapyrenyl, 1,8-diazapyrenyl, 4,5-diazapyrenyl, 4,5,9,10-tetraazaperyl, pyrazinyl, phenazinyl, phenothiazinyl, naphthyridinyl, azacarbazolyl, benzocarbolinyl, phenanthroline, benzotriazolyl, 1,2,4-oxadiazolyl, 1,2,5-oxadiazolyl, 1,3,5-triazinyl, 1,2,4-triazinyl, 1,2,3-triazinyl, purinyl, pteridinyl, indolizinyl, benzothiadiazolyl, 9,9-dimethylacridinyl, or a combination of two of the above groups;

In formula (6), R ⁴⁰ is selected from a fluorophenyl group, a benzonitrile group, and a substituted or unsubstituted triazine group;

When the above groups have substituents, the substituents are independently selected from one of C1-C10 alkyl or cycloalkyl groups, C1-C6 alkoxy or thioalkoxy groups, C6-C30 monocyclic aromatic hydrocarbons or condensed aromatic hydrocarbon groups, and C3-C30 monocyclic heteroaromatic hydrocarbons or condensed heteroaromatic hydrocarbon groups;

In formula (7), formula (8) and formula (9), ^X1 and ^X2 are independently N or B;

Each of _RB , _RC , _RD and _RE is linked to the adjacent ring structure via a single bond or by fusion.

Said _RA , _RB , _RC , _RD and _RE are independently selected from hydrogen, deuterium, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, phenyl, naphthyl, anthracenyl, benzanthryl, phenanthrenyl, triphenylenyl, pyrenyl, chrysene, peryl, fluoranthenyl, naphthyl, pentacene, benzopyrenyl, biphenyl, phenylene, terphenyl, triphenylene, tetraphenylene, fluorenyl, spirobifluorenyl, dihydrophenanthrenyl, dihydropyrenyl, tetrahydropyrenyl, cis- or trans-indenofluorenyl, trimerized indenyl, isotrimerized indenyl, spirotrimerized indenyl, spiroisotrimerized indenyl, furanyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, thienyl, benzothienyl, isobenzothienyl, dibenzothienyl, pyrrolyl, isoindolyl, carbazolyl, indenocarbazolyl, pyridyl, quinolyl, isoquinolyl, acridinyl, phenanthridinyl, benzo-5,6-quinolyl, benzo-6,7-quinolyl, benzo-7,8-quinolyl, pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, naphthoimidazolyl, phenanthroimidazolyl, pyridoimidazolyl, pyrazinoimidazolyl, quinoxalinoimidazolyl, oxazolyl, benzoxazolyl, naphthoxazolyl, anthraquinone, phenanthraquinone, 1,2-thiazolyl, 1,3-thiazolyl, benzothiazolyl, pyridazinyl, benzopyridazinyl, pyrimidinyl, benzopyrimidinyl, quinoxalinyl, 1,5-diazaanthryl, 2,7-diazapyrenyl, 2,3-diazapyrenyl, 1,6-diazapyrenyl, 1,8-diazapyrenyl, 4,5-diazapyrenyl, 4,5,9,10-tetraazaperyl, pyrazinyl, phenazinyl, phenothiazinyl, naphthyridinyl, azacarbazolyl, benzocarbolinyl, phenanthrolinyl, 1,2,3-triazolyl, 1,2,4-triazolyl, benzotriazolyl, 1,2,3-oxadiazolyl, 1,2,4-oxadiazolyl, 1,2, 1,2,3-thiadiazolyl, 1,2,4-thiadiazolyl, 1,2,5-thiadiazolyl, 1,3,4-thiadiazolyl, 1,3,5-triazinyl, 1,2,4-triazinyl, 1,2,3-triazinyl, tetrazolyl, 1,2,4,5-tetrazinyl, 1,2,3,4-tetrazinyl, 1,2,3,5-tetrazinyl, purinyl, pteridinyl, indolizinyl, benzothiadiazolyl, 9,9-dimethylacridinyl, diarylamine, triarylamine, adamantane, fluorophenyl, methylphenyl, trimethylphenyl, cyanophenyl, pyrrole, piperidine, methoxy, silicon, or a combination of two of the above substituent groups;

Preferably, _RA , _RB , _RC , _RD and _RE are independently selected from one of hydrogen, methyl, ethyl, n-propyl, isopropyl, cyclopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, cyclohexyl, adamantyl, fluorine, trifluoromethyl, phenyl, mesityl, naphthyl, anthracenyl, furanyl, tetrahydrofuranyl, pyrrolyl, tetrahydropyrrolyl, thienyl, carbazolyl, triazine, pyridyl, quinolyl, acridinyl, cyano, methoxy, silyl, dimethylamino, triarylamine, fluorenyl, dibenzofuranyl and dibenzothienyl, or a combination of two of the above substituents.

More preferably, in the organic electroluminescent device of the present invention, the resonant narrow spectrum fluorescent material is selected from the following specific structural compounds, which are only representative:

12. The organic electroluminescent device according to claim 1, wherein the phosphorescent sensitizer is selected from one of the following compounds:

More preferably, in the organic electroluminescent device of the present invention, the first host compound is selected from one of the following compounds:

More preferably, in the organic electroluminescent device of the present invention, the second host compound is selected from one of the following compounds:

Furthermore, in the organic electroluminescent device of the present invention, the doping concentration of the resonant narrow spectrum fluorescent material in the light-emitting layer is 0.1wt% to 30wt%, and the doping concentration of the phosphorescent sensitizer in the light-emitting layer is 1wt% to 50wt%;

Preferably, the doping concentration of the resonant narrow spectrum fluorescent material in the light-emitting layer is 0.1wt% to 10wt%, and the doping concentration of the phosphorescent sensitizer in the light-emitting layer is 1wt% to 20wt%;

More preferably, the doping concentration of the resonance-type narrow-spectrum fluorescent material in the light-emitting layer is 0.1-5 wt %, and the doping concentration of the phosphorescence sensitizer in the light-emitting layer is 1-10 wt %.

Furthermore, the present invention protects the application of organic electroluminescent devices, which are applications in organic electronic devices, including optical sensors, solar cells, lighting elements, organic thin film transistors, organic field effect transistors, information tags, electronic artificial skin sheets, sheet-type scanners or electronic paper.

Furthermore, the present invention protects a display device, characterized in that it includes the organic electroluminescent device according to claim 1, and the display device is a display element, a lighting element, an information label, an electronic artificial skin sheet or an electronic paper.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a diagram showing the light-emitting mechanism of the organic electroluminescent device of the present invention, wherein FET stands for Forster energy transfer, DET stands for Dexter energy transfer, ISC stands for intersystem crossing, and RISC stands for reverse intersystem crossing.

FIG. 2 is a schematic diagram of the structure of an organic electroluminescent device prepared in an embodiment of the present invention.

As shown in FIG. 2 , the organic electroluminescent device of the present invention comprises an anode 2 , a hole transport region 3 , an organic light emitting layer 4 , an electron transport region 5 and a cathode 6 which are sequentially deposited on a substrate 1 .

Specifically, the substrate can be made of glass or polymer material with excellent mechanical strength, thermal stability, water resistance and transparency. In addition, the substrate used as a display can also be provided with a thin film transistor (TFT).

The anode can be formed by sputtering or depositing an anode material on a substrate, wherein the anode material can be an oxide transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), tin dioxide (SnO2), zinc oxide (ZnO) and any combination thereof; the cathode can be a metal or alloy such as magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag) and any combination thereof.

The hole transport region, the light emitting layer, the electron transport region and the organic material layer of the cathode can be sequentially prepared on the anode by vacuum thermal evaporation, spin coating, printing, etc. Among them, the compound used as the organic material layer can be an organic small molecule, an organic macromolecule and a polymer, and a combination thereof.

The hole transport region 3, the electron transport region 5 and the cathode 6 of the present invention are introduced. The hole transport region 3 is located between the anode 2 and the organic light-emitting layer 4. The hole transport region 3 can be a hole transport layer (HTL) of a single-layer structure, including a single-layer hole transport layer containing only one compound and a single-layer hole transport layer containing multiple compounds. The hole transport region 3 can also be a multilayer structure including at least one layer of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL).

The material of the hole transport region 3 (including HIL, HTL and EBL) can be selected from, but not limited to, phthalocyanine derivatives such as CuPc, conductive polymers or polymers containing conductive dopants such as polyphenylene ethylene, polyaniline/dodecylbenzenesulfonic acid (Pani/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphorsulfonic acid (Pani/CSA), polyaniline/poly(4-styrenesulfonate) (Pani/PSS), and aromatic amine derivatives.

The aromatic amine derivatives are compounds shown in HT-1 to HT-34 below. If the material of the hole transport region 3 is an aromatic amine derivative, it can be one or more of the compounds shown in HT-1 to HT-34.

The hole injection layer is located between the anode 2 and the hole transport layer. The hole injection layer can be a single compound material or a combination of multiple compounds. For example, the hole injection layer can use one or more compounds of HT-1 to HT-34 mentioned above, or one or more compounds of HI1-HI3 described below; or one or more compounds of HT-1 to HT-34 can be doped with one or more compounds of HI1-HI3 described below.

The electron transport region 5 may be a single-layer electron transport layer (ETL), including a single-layer electron transport layer containing only one compound and a single-layer electron transport layer containing multiple compounds. The electron transport region 5 may also be a multi-layer structure including at least one layer of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL).

In one aspect of the present invention, the electron transport layer material can be selected from, but not limited to, one or more combinations of ET-1 to ET-57 listed below.

The structure of the light emitting device may further include an electron injection layer located between the electron transport layer and the cathode 6. The electron injection layer material includes but is not limited to one or more combinations of the following: LiQ, LiF, NaCl, CsF, Li ₂ O, Cs ₂ CO ₃ , BaO, Na, Li, Ca.

The thickness of each layer mentioned above can adopt the conventional thickness of these layers in the art.

The light emitting layer is described in detail below. When preparing the organic light emitting layer 4, the organic light emitting layer 4 is formed by co-evaporation of a wide bandgap host material source, a TADF dye source and a phosphorescent sensitizer material source.

The organic electroluminescent device of the present invention is further described below through specific embodiments.

The method for preparing the organic electroluminescent device of the present invention comprises the following steps:

1. The glass plate coated with the anode material was ultrasonically treated in a commercial cleaning agent, rinsed in deionized water, ultrasonically degreased in a mixed solvent of acetone:ethanol, baked in a clean environment until the water was completely removed, cleaned with ultraviolet light and ozone, and bombarded with a low-energy cation beam;

2. Place the glass plate with the anode in a vacuum chamber, evacuate the chamber to 1×10 ^-5 to 9×10 ^-3 Pa, and vacuum-deposit a hole injection layer on the anode layer at a deposition rate of 0.1 to 0.5 nm/s;

3. Vacuum evaporate the hole transport layer on the hole injection layer at a rate of 0.1-0.5nm/s.

4. Vacuum-deposit the light-emitting layer of the device on the hole transport layer, the light-emitting layer including the main material, TADF dye and phosphorescent sensitizer. Using the multi-source co-evaporation method, adjust the evaporation rate of the main material, the evaporation rate of the TADF dye and the phosphorescent sensitizer material so that the dye reaches a preset doping ratio;

5. Vacuum-deposit the electron transport layer material of the device on the organic light-emitting layer at a rate of 0.1-0.5 nm/s;

6. LiF was vacuum evaporated at 0.1-0.5 nm/s on the electron transport layer as the electron injection layer, and Al was vacuum evaporated at 0.5-1 nm/s as the cathode of the device.

Some organic material structural formulas used in the embodiments of the present invention are as follows:

Example 1

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-3:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

Among them, the anode is ITO; the material of the hole injection layer is HI-2, and the total thickness is generally 5-30nm, and the present embodiment is 10nm; the material of the hole transport layer is HI-27, and the total thickness is generally 5-500nm, and the present embodiment is 40nm; the main material of the organic light-emitting layer is an equimolar mixture of the exciplex D-2 and A-01, the phosphorescence sensitizer material is PH-3 and the doping concentration is 10wt%, the dye is the resonance TADF material MR-228 and the doping concentration is 1wt%, the thickness of the organic light-emitting layer is generally 1-200nm, and the present embodiment is 30nm; the material of the electron transport layer is ET-53, and the thickness is generally 5-300nm, and the present embodiment is 30nm; the electron injection layer and the cathode materials are selected from LiF (0.5nm) and metal aluminum (150nm).

According to the above-mentioned preparation steps and testing methods, the device embodiments 1-85 and comparative examples 1-12 of the present invention were completed. The specific design scheme of the light-emitting layer is detailed in the following embodiments and Table 1.

Example 2

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of the first embodiment, the only difference being the resonant narrow spectrum fluorescent material.

Example 3

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-3:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of the first embodiment, the only difference being the resonant narrow spectrum fluorescent material.

Example 4

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-3:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of the first embodiment, the only difference being the resonant narrow spectrum fluorescent material.

Example 5

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-3:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of the first embodiment, the only difference being the resonant narrow spectrum fluorescent material.

Example 6

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-5:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Example 7

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-5:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Example 8

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-5:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Example 9

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-5:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Example 10

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-5:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Embodiment 11

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-67:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Example 12

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-67:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Example 13

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-67:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Embodiment 14

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-67:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Embodiment 15

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-01:10wt%PH-67:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is substantially the same as that of Example 1, the only difference being the phosphorescence sensitizer.

Example 16

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-3:A-08:10wt%PH-3:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of the embodiment 1, the only difference being the main body.

Embodiment 17

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-3:A-08:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 2, with the only difference being the main body.

Embodiment 18

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-3:A-08:10wt%PH-3:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 3, with the only difference being the main body.

Embodiment 19

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-6:A-08:10wt%PH-3:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 4, with the only difference being the main body.

Embodiment 20

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-6:A-08:10wt%PH-3:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 5, with the only difference being the main body.

Embodiment 21

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-6:A-08:10wt%PH-5:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 6, with the only difference being the main body.

Example 22

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-3:A-08:10wt%PH-5:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 7, with the only difference being the main body.

Embodiment 23

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-3:A-09:10wt%PH-5:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 8, with the only difference being the main body.

Embodiment 24

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-6:A-09:10wt%PH-5:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 9, with the only difference being the main body.

Embodiment 25

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-6:A-09:10wt%PH-5:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 10, with the only difference being the main body.

Embodiment 26

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-09:10wt%PH-67:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 11, with the only difference being the main body.

Embodiment 27

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-2:A-09:10wt%PH-67:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 12, with the only difference being the main body.

Embodiment 28

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-6:A-01:10wt%PH-67:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 13, with the only difference being the main body.

Embodiment 29

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-6:A-01:10wt%PH-67:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 14, with the only difference being the main body.

Embodiment 30

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-3:A-01:10wt%PH-67:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 15, with the only difference being the main body.

Embodiment 31

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-3:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 5, with the only difference being the main body.

Embodiment 32

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-3:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 31, with the only difference being the resonant narrow spectrum fluorescent material.

Embodiment 33

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-3:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 31, with the only difference being the resonant narrow spectrum fluorescent material.

Embodiment 34

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-18:10wt%PH-3:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of the embodiment 1, the only difference being the main body.

Embodiment 35

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-18:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 2, with the only difference being the main body.

Embodiment 36

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-36:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 35, with the only difference being the main body.

Embodiment 37

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-36:10wt%PH-3:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 33, with the only difference being the main body.

Embodiment 38

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-36:10wt%PH-3:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 31, with the only difference being the main body.

Embodiment 39

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-36:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 35, with the only difference being the main body.

Embodiment 40

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-5:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 6, with the only difference being the main body.

Embodiment 41

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-5:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 7, with the only difference being the main body.

Embodiment 42

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-5:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 8, with the only difference being the main body.

Embodiment 43

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-5:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 9, with the only difference being the main body.

Embodiment 44

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-5:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 10, with the only difference being the main body.

Embodiment 45

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-18:10wt%PH-67:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 13, with the only difference being the main body.

Embodiment 46

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-67:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 40, with the only difference being the phosphorescence sensitizer.

Embodiment 47

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-67:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 41, with the only difference being the phosphorescence sensitizer.

Embodiment 48

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-67:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 42, with the only difference being the phosphorescence sensitizer.

Embodiment 49

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-67:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 43, with the only difference being the phosphorescence sensitizer.

Embodiment 50

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-67:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 44, with the only difference being the phosphorescence sensitizer.

Embodiment 51

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:15wt%PH-3:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 31, with the only difference being the doping concentration of the phosphorescent sensitizer.

Embodiment 52

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:20wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 41, with the only difference being the different doping concentration of the phosphorescent sensitizer.

Embodiment 53

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:25wt%PH-67:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 48, with the only difference being the doping concentration of the phosphorescent sensitizer.

Embodiment 54

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:30wt%PH-3:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 32, with the only difference being the different doping concentration of the phosphorescent sensitizer.

Embodiment 55

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:5wt%PH-3:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 33, with the only difference being the different doping concentration of the phosphorescent sensitizer.

Embodiment 56

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-27:10wt%PH-3:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 32, with the only difference being the main body.

Embodiment 57

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-27:10wt%PH-3:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 33, with the only difference being the main body.

Embodiment 58

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-27:10wt%PH-3:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 3, with the only difference being the main body.

Embodiment 59

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-27:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 35, with the only difference being the main body.

Embodiment 60

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-18:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 36, with the only difference being the main body.

Embodiment 61

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-18:10wt%PH-3:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 37, with the only difference being the main body.

Embodiment 62

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-18:10wt%PH-3:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 38, with the only difference being the main body.

Embodiment 63

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-27:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 39, with the only difference being the main body.

Embodiment 64

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-36:10wt%PH-5:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 40, with the only difference being the main body.

Embodiment 65

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-25:A-36:10wt%PH-5:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 41, with the only difference being the main body.

Embodiment 66

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-36:10wt%PH-5:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 42, with the only difference being the main body.

Embodiment 67

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-36:10wt%PH-67:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 48, with the only difference being the main body.

Embodiment 68

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-36:10wt%PH-67:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 39, with the only difference being the main body.

Embodiment 69

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-3:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of the embodiment 1, the only difference being the main body.

Embodiment 70

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-3:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 2, with the only difference being the main body.

Embodiment 71

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-3:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 3, with the only difference being the main body.

Embodiment 72

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-3:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 4, with the only difference being the main body.

Embodiment 73

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-3:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 5, with the only difference being the main body.

Embodiment 74

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-5:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 6, with the only difference being the main body.

Embodiment 75

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-5:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 7, with the only difference being the main body.

Embodiment 76

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-5:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 8, with the only difference being the main body.

Embodiment 77

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-5:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 9, with the only difference being the main body.

Embodiment 78

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-5:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 10, with the only difference being the main body.

Embodiment 79

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-67:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 11, with the only difference being the main body.

Embodiment 80

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-67:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The meaning of the device is roughly the same as that of Example 12, with the only difference being the main body.

Embodiment 81

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-67:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 31, with the only difference being the different doping concentration of the resonant narrow spectrum fluorescent material.

Embodiment 82

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-67:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 33, with the only difference being the different doping concentration of the resonant narrow spectrum fluorescent material.

Embodiment 83

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-53:A-44:10wt%PH-67:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 50, with the only difference being the different doping concentration of the resonant narrow spectrum fluorescent material.

Embodiment 84

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-75:A-59:10wt%PH-5:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 42, with the only difference being the different doping concentration of the resonant narrow spectrum fluorescent material.

Embodiment 85

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-75:A-82:10wt%PH-5:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 44, with the only difference being the different doping concentration of the resonant narrow spectrum fluorescent material.

Embodiment 86

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-240:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 31, with the only difference being the phosphorescence sensitizer.

Embodiment 87

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-241:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 43, with the only difference being the phosphorescence sensitizer.

Embodiment 88

The device structure of this embodiment is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:10wt%PH-242:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm )/Al(150nm)

The device significance is substantially the same as that of Example 52, with the only difference being the phosphorescence sensitizer.

Comparative Example 1

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of Example 43, the only difference being that there is no phosphorescence sensitizer.

Comparative Example 2

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of Example 44, the only difference being that there is no phosphorescence sensitizer.

Comparative Example 3

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of Example 41, the only difference being that there is no phosphorescent sensitizer.

Comparative Example 4

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%MR-10(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of Example 42, the only difference being that there is no phosphorescent sensitizer.

Comparative Example 5

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%MR-228(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of Example 40, the only difference being that there is no phosphorescent sensitizer.

Comparative Example 6

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%TBPe(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of comparative example 31, with the only difference being that the light-emitting layer is replaced with a traditional fluorescent dye.

Comparative Example 7

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%TTPA(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of comparative example 31, with the only difference being that the light-emitting layer is replaced with a traditional fluorescent dye.

Comparative Example 8

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%TBRb(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of comparative example 31, with the only difference being that the light-emitting layer is replaced with a traditional fluorescent dye.

Comparative Example 9

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/D-14:A-18:1wt%DBP(30nm)/ET-53(30nm)/LiF(0.5nm)/Al(150nm)

The device significance is substantially the same as that of comparative example 31, with the only difference being that the light-emitting layer is replaced with a traditional fluorescent dye.

Comparative Example 10

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/W-7:10wt%PH-3:1wt%MR-82(30nm)/ET-53(30nm)/LiF(0.5nm)/Al( 150nm)

The meaning of the device is substantially the same as that of Example 5, with the only difference being that the main body is replaced with a wide bandgap main body.

Comparative Example 11

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/W-19:10wt%PH-5:1wt%MR-802(30nm)/ET-53(30nm)/LiF(0.5nm)/Al( 150nm)

The device significance is substantially the same as that of Example 9, with the only difference being that the main body is replaced with a wide bandgap main body.

Comparative Example 12

The device structure of this comparative example is as follows:

ITO/HI-2(10nm)/HT-27(40nm)/W-1:10wt%PH-67:1wt%MR-1217(30nm)/ET-53(30nm)/LiF(0.5nm)/Al( 150nm)

The device significance is substantially the same as that of Example 27, with the only difference being that the main body is replaced with a wide bandgap main body.

The organic electroluminescent device prepared by the above process was subjected to the following performance tests:

The following performance measurements were performed on the devices prepared in Examples 1-85 and Comparative Examples 1-12: the current, voltage, brightness, luminescence spectrum, current efficiency, external quantum efficiency and other characteristics of the prepared devices were tested synchronously using a PR 655 spectrum scanning luminance meter and a Keithley K 2400 digital source meter system, and the lifespan was completed using an MC-6000 test.

1. Turn-on voltage: Increase the voltage at a rate of 0.1V per second, and measure the voltage when the brightness of the organic electroluminescent device reaches 1cd/ ^m2 , which is the turn-on voltage;

2. The life test of LT90 is as follows: by setting different test brightness, the brightness and life decay curve of the organic electroluminescent device is obtained, so as to obtain the life value of the device under the required decay brightness. That is, the test brightness is set to 1000cd/ ^m2 , the current is kept constant, and the time for the brightness of the organic electroluminescent device to drop to 900cd/ ^m2 is measured in hours;

The above specific test results are shown in Table 1.

Table 1:

The electroluminescent external quantum efficiency of the organic electroluminescent device structure of the present invention is about 30%, and the efficiency roll-off is small at high brightness, and the half-peak width is narrow, which indicates that the color purity is good. In addition, the device of the present invention has a long life, showing overall superiority.

The embodiment of the present invention further provides a display device, which includes the organic electroluminescent device provided above. The display device can specifically be a display device such as an OLED display, and any product or component with a display function such as a television, a digital camera, a mobile phone, a tablet computer, etc. that includes the display device. The display device has the same advantages as the above-mentioned organic electroluminescent device over the prior art, which will not be repeated here.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them. Although the present invention has been described in detail with reference to the above embodiments, a person skilled in the art should understand that the technical solutions described in the above embodiments can still be modified, or some or all of the technical features can be replaced by equivalents, and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims (14)

1. An organic electroluminescent device, comprising a substrate, a first electrode, a second electrode and an organic functional layer, wherein the organic functional layer comprises an organic light-emitting layer, the organic light-emitting layer comprises a host material, a phosphorescent sensitizer and a resonant narrow spectrum fluorescent material used as a luminescent dye, characterized in that: The host material consists of a first host compound and a second host compound, and the first host compound and the second host compound form an exciplex; The resonant narrow spectrum fluorescent material is a material having a narrow-band spectrum emission characteristic, wherein the Stokes shift of the resonant narrow spectrum fluorescent material satisfies: λ≤60nm, and the half-peak width satisfies: FWHM≤60nm; The resonant narrow spectrum fluorescent material is a compound whose core structure adopts a resonant molecular structure formed by a boron atom and a nitrogen atom, or a compound whose core structure adopts a resonant molecular structure formed by a boron atom and an oxygen, sulfur, or selenium atom, or a compound whose core structure adopts a carbonyl group and a nitrogen atom to form a resonant molecular structure, or a compound whose core structure adopts a carbonyl group and an oxygen, sulfur, or selenium atom to form a resonant molecular structure, or a compound whose core structure adopts an indolecarbazole-type resonant molecular structure, and the singlet energy level S1 and the triplet energy level T1 of the resonant narrow spectrum fluorescent material satisfy the formula: ΔEst＝S1-T1≤0.4eV； The singlet energy level and triplet energy level of the second host compound are both higher than the triplet energy level of the phosphorescent sensitizer, and the singlet energy level and triplet energy level of the exciplex formed by the first host compound and the second host compound are also higher than the triplet energy level of the phosphorescent sensitizer; The triplet energy level of the exciplex is higher than the triplet energy level of the resonance-type narrow-spectrum fluorescent material; The triplet energy level of the phosphorescent sensitizer is higher than the triplet energy level of the resonance-type narrow-spectrum fluorescent material. 2. The organic electroluminescent device according to claim 1, characterized in that the first host compound is a hole transport host, having a highest occupied orbital E _HOMO ^P and a lowest unoccupied orbital E _LUMO ^P , and having a first singlet energy level S ₁ ^P and a first triplet energy level T ₁ ^P (calculated based on the Onset values of the fluorescence emission spectrum and the phosphorescence emission spectrum at 77K); The second host compound is an electron transport host, having a highest occupied orbital E _HOMO ^N and a lowest unoccupied orbital E _LUMO ^N , and having a first singlet energy level S ₁ ^N and a first triplet energy level T ₁ ^N (calculated based on the Onset values of the fluorescence emission spectrum and the phosphorescence emission spectrum at 77K); The exciplex formed by the first host compound and the second host compound has a first singlet energy level S ₁ ^EX and a first triplet energy level T ₁ ^EX (calculated according to the Onset value of the fluorescence emission spectrum and the phosphorescence emission spectrum at 77K), and the first host compound, the second host compound and the formed exciplex satisfy the following equation: S ₁ ^EX ━T ₁ ^EX ≤0.3Ev; E _HOMO ^P ＞E _HOMO ^N ; E _LUMO ^P ＞ E _LUMO ^N ; E _HOMO ^P - _{E HOMO} ^N >0.2eV; _ELUMOP ^- _ELUMON ＞0.3eV ^; S ₁ ^P ＞S ₁ ^N ≧S ₁ ^EX . 3. The organic electroluminescent device according to claim 1, characterized in that the phosphorescent sensitizer has a first singlet energy level S ₁ ^Phos and a first triplet energy level T ₁ ^Phos (S ₁ ^Phos is calculated based on the Onset value of the tail absorption in the longest wavelength direction of the ultraviolet-visible absorption spectrum, and T ₁ ^Phos is calculated based on the Onset value of the phosphorescence emission spectrum at 77K), which satisfies the following equation: S ₁ ^EX ＞S ₁ ^Phos T ₁ ^EX >T ₁ ^Phos . 4. The organic electroluminescent device according to claim 1, characterized in that the first host compound is selected from the compound shown in the following formula 1-1: In formula (1-1), Ar ⁴ is selected from a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C3-C60 heteroaryl group; R ₀₀₁ and R ₀₀₂ represent a substituent group from monosubstituted to the maximum allowed number, and R ₀₀₁ and R ₀₀₂ are each independently selected from one of hydrogen, deuterium, cyano, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C3-C20 cycloalkyl, substituted or unsubstituted C1-C20 silyl, substituted or unsubstituted C6-C30 arylamino, substituted or unsubstituted C7-C30 aralkyl, substituted or unsubstituted C3-C30 heteroarylamino, substituted or unsubstituted C6-C60 aryl, and substituted or unsubstituted C3-C60 heteroaryl; and two adjacent ones of R ₀₀₁ and R ₀₀₂ are not connected or connected to form a ring; When there are substituents on the above-mentioned groups, the substituents are independently selected from any one of deuterium, halogen, cyano, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 aryloxy, C6-C60 aryl, and C5-C60 heteroaryl. 5. The organic electroluminescent device according to claim 4, characterized in that the first host compound has a structure as described in formula (1-2) or formula (1-3): In formula (1-2) and formula (1-3), m and n are each independently an integer of 1 to 4; The definitions of Ar ⁴ , R ₀₀₁ and R ₀₀₂ are the same as those in formula (1-1); Ar ⁵ is selected from a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C3-C60 heteroaryl group; The L is selected from a single bond, a substituted or unsubstituted C6-C60 aryl group, or a substituted or unsubstituted C3-C60 heteroaryl group; _R003 and _R004 represent a substituent group ranging from monosubstituted to the maximum allowed number, and _R001 and _R002 are each independently selected from one of hydrogen, deuterium, cyano, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C3-C20 cycloalkyl, substituted or unsubstituted C1-C20 silyl, substituted or unsubstituted C6-C30 arylamino, substituted or unsubstituted C7-C30 aralkyl, substituted or unsubstituted C3-C30 heteroarylamino, substituted or unsubstituted C6-C60 aryl, and substituted or unsubstituted C3-C60 heteroaryl; When there are substituents on the above groups, the substituents are independently selected from any one of deuterium, halogen, cyano, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 aryloxy, C6-C60 aryl, and C5-C60 heteroaryl; Preferably, Ar ⁴ and Ar ⁵ are each independently selected from a combination of one or more of substituted or unsubstituted benzene, substituted or unsubstituted biphenyl, substituted or unsubstituted terphenyl, substituted or unsubstituted triphenylene, substituted or unsubstituted dibenzofuran, substituted or unsubstituted dibenzothiophene, substituted or unsubstituted indole, substituted or unsubstituted indolecarbazole, substituted or unsubstituted carbazole, and substituted or unsubstituted fluorene; when substituents are present on Ar ⁴ and Ar ⁵ , the substituents are independently selected from any one of deuterium, halogen, cyano, C1-C10 chain alkyl, C3-C10 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C30 aryloxy, C6-C30 aryl, and C5-C30 heteroaryl. 6. The organic electroluminescent device according to claim 1 or 4, characterized in that the first host compound is selected from one of the following compounds: 7. The organic electroluminescent device according to claim 1, characterized in that the second host compound is selected from one of the following compounds: 8. The organic electroluminescent device according to claim 1, characterized in that the resonant narrow spectrum fluorescent material is selected from the structure shown in any one of the following formulas (1), (2), (3), (4) or (5): In formula (1): The R ²¹ to R ²⁸ are independently selected from hydrogen, deuterium or one of the following substituted or unsubstituted groups: halogen, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C1-C10 thioalkoxy, carbonyl, carboxyl, nitro, cyano, amino, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 monocyclic aryl, C6-C60 condensed aryl, C6-C60 aryloxy, C5-C60 monocyclic heteroaryl or C5-C60 condensed heteroaryl, and R ²¹ to R Two adjacent groups in ²⁸ are not connected or bonded to each other and together with the adjacent benzene ring form one of a C5-C30 five-membered or six-membered aryl ring or a C5-C30 five-membered or six-membered heteroaryl ring, and at least one hydrogen in the formed ring structure can be substituted by any one of a C6-C30 arylamino, a C3-C30 heteroarylamino, a C6-C60 monocyclic aryl, a C6-C60 condensed aryl, a C6-C60 aryloxy, a C5-C60 monocyclic heteroaryl, a C5-C60 condensed heteroaryl, a halogen, a C1-C30 chain alkyl, a C3-C30 cycloalkyl, a C1-C10 alkoxy, a C1-C10 thioalkoxy, a carbonyl, a carboxyl, a nitro, a cyano, and an amino group; The X ⁵ and X ⁶ are independently selected from NR, the R can be bonded to the adjacent ring structure through -O-, -S-, -C(-R')2- or a single bond, and the R and R' are independently selected from one of the following substituted or unsubstituted groups: C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C30 haloalkyl, C1-C30 alkoxy, C2-C30 alkenyl, C3-C30 alkynyl, C6-C60 aryl, C6-C60 aryloxy, C5-C60 heteroaryl; In formula (1), ring F represents a group which is simultaneously fused to a six-membered ring structure consisting of B and ^X5 and a six-membered ring structure consisting of B and ^X6 , and the ring F is selected from a substituted or unsubstituted C6-C60 aromatic ring and a substituted or unsubstituted C5-C60 heteroaromatic ring containing a nitrogen atom; When the above groups have substituents, the substituents are independently selected from one of deuterium, halogen, cyano, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C30 aryl, and C3-C30 heteroaryl; In formula (2), X ¹ , X ² , X ³ and X ⁴ are independently NR ₁ or O, and X ¹ , X ² , X ³ and X ⁴ are not O at the same time, and X ¹ , X ² , X ³ and X ⁴ are not NR ₁ at the same time; The _R1 is selected from one of the following substituted or unsubstituted groups: a C6-C60 monocyclic aromatic group, a C6-C60 condensed aromatic group, a C5-C60 monocyclic heteroaromatic group or a C5-C60 condensed heteroaromatic group; the _R1 is connected to the adjacent benzene ring through a single bond or not, or _R1 is fused with the adjacent benzene ring to bond with each other to form a ring; The ^X1 and ^X4 may be connected by a single bond, or may be fused to form a ring; the ^X2 and ^X3 may be connected by a single bond, or may be fused to form a ring; Said ^Ra , ^Rb , ^Rc and ^Rd each independently represent a single substituent to the maximum permissible substituent, and are each independently selected from hydrogen, deuterium or one of the following groups: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, phenyl, naphthyl, anthracenyl, benzanthryl, phenanthryl, triphenylene, pyrenyl, chrysene, peryl, fluoranthenyl, naphthyl, pentacene, benzopyrenyl, biphenyl, phenylene, terphenyl, triphenylene, quaternary, fluorenyl, spirobifluorenyl, adamantane, fluorophenyl, methylphenyl, trimethylphenyl, cyanophenyl; said ^Ra Adjacent two of R ^b , R ^c and R ^d may be connected by a single bond or not, or may be fused to form a ring; When the above groups have substituents, the substituents are independently selected from any one of deuterium, halogen, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C1-C10 thioalkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 monocyclic aryl, C6-C60 condensed ring aryl, C6-C60 aryloxy, C5-C60 monocyclic heteroaryl, and C5-C60 condensed ring heteroaryl; In formula (3), the dashed line represents a single bond connection or no connection; ^X1 and ^X2 are independently N or B; Ring A represents a benzene ring, a naphthalene ring or an anthracene ring; Ring B and Ring C each independently represent a benzene ring, a naphthalene ring or an anthracene ring; Ring D and Ring E each independently represent a C8-C60 condensed aromatic hydrocarbon; Said _RA , _RB , _RC , _RD and _RE respectively independently represent a substituent group from a single substituent group to the maximum permissible number of substituents, and _RA , _RB , _RC , _RD and _RE are each independently selected from one of hydrogen, deuterium, halogen, carbonyl, carboxyl, nitro, cyano, amino, silicon, substituted or unsubstituted C1-C36 chain alkyl, substituted or unsubstituted C3-C36 cycloalkyl, substituted or unsubstituted C1-C10 alkoxy, substituted or unsubstituted C1-C10 thioalkoxy, substituted or unsubstituted C6-C30 arylamino, substituted or unsubstituted C3-C30 heteroarylamino, substituted or unsubstituted C6-C60 monocyclic aryl or condensed ring aryl, substituted or unsubstituted C6-C60 aryloxy, and substituted or unsubstituted C5-C60 heteroaryl; Said _RA , _RB , _RC , _RD and _RE are each connected to the connected ring A, ring B, ring C, ring D and ring E through a single bond, or _RA , _RB , _RC , _RD and _RE are each fused to the connected ring A, ring B, ring C, ring D and ring E; When the above-mentioned _RA , _RB , _RC , _RD and _RE have substituents, the substituents are independently selected from one of deuterium, halogen, nitro, cyano, amino, carbonyl, carboxyl, C1-C30 chain alkyl, C3-C30 cycloalkyl, C1-C10 alkoxy, C1-C10 thioalkoxy, C6-C30 arylamino, C3-C30 heteroarylamino, C6-C60 aryl, C6-C60 aryloxy and C5-C60 heteroaryl; In formula (4) and formula (5), Y ₁ and Y ₂ are independently O, S or N; A ₁ and A ₂ are independently single bonds or O; Z ₁ -Z ₁₂ are each independently represented by CR ₄ ; R ₄ are each independently selected from any one of hydrogen, deuterium, C1-C10 alkyl, C3-C10 cycloalkyl, and C6-C30 aryl; The ring D is represented by hydrogen or a structure represented by the following formula (a) or (b), and the ring E is represented by a structure represented by the following formula (a) or (b): In formula (a) and formula (b), the dotted line represents the connection position with the parent core of formula (1) or formula (2); In formula (a), Y ₃ represents Y ₁ and/or Y ₂ in formula (1) or formula (2); In formula (a), X ₁ to X ₁₁ are each independently CR ₅ ; In formula (b), Y ₄ represents Y ₁ and/or Y ₂ in formula (1) or (2), and Y ₅ represents O, S or N; In formula (b), X ₂₁ to X ₃₅ are each independently CR ₇ ; _R5 and _R7 are independently selected from any one of hydrogen, deuterium, C1-C10 alkyl, C3-C10 cycloalkyl, and C6-C30 aryl; Preferably, in formula (1), ring F represents a substituted or unsubstituted C13-C60 nitrogen-containing heteroaromatic ring; in formula (1), R ²¹ to R ²⁸ are each independently selected from hydrogen, deuterium, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, phenyl, naphthyl, anthracenyl, benzanthryl, phenanthryl, triphenylenyl, pyrenyl, chrysene, peryl, fluoranthenyl, tetraphenylene, pentacene, benzopyrenyl, biphenylene, phenylene, terphenylene, triphenylene, quaternaryl, fluorenyl, spirobifluorenyl, dihydrophenanthryl, dihydropyrenyl, tetrahydropyrenyl, cis- or trans-indenofluorenyl, trimerized indenyl, isotrimerized indenyl, spirotrimerized indenyl, spiroisotrimerized indenyl, furanyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, thienyl, benzothienyl, isobenzothienyl, dibenzothienyl, pyrrolyl, isoindolyl, carbazolyl, indenocarbazolyl, pyridyl, quinolyl, isoquinolyl, acridinyl, phenanthridinyl, benzo-5,6-quinolyl, benzo-6,7-quinolyl, benzo-7,8-quinolyl, pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, naphthoimidazolyl, phenanthroimidazolyl, pyridoimidazolyl, pyrazinoimidazolyl, quinoxalinoimidazolyl, um oxazolyl, benzoxazolyl, naphthoxazolyl, anthrazolyl, phenanthrazolyl, 1,2-thiazolyl, 1,3-thiazolyl, benzothiazolyl, pyridazinyl, benzopyridazinyl, pyrimidinyl, benzopyrimidinyl, quinoxalinyl, 1,5-diazaanthryl, 2,7-diazapyrenyl, 2,3-diazapyrenyl, 1,6-diazapyrenyl, 1,8-diazapyrenyl, 4,5-diazapyrenyl, 4,5,9,10-tetraazaperyl, pyrazinyl, phenazinyl, phenothiazinyl, naphthyridinyl, azacarbazolyl, benzocarbolinyl, phenanthrolinyl, 1,2,3-triazolyl, 1,2,4-triazolyl, benzotriazolyl, 1,2, 3-oxadiazolyl, 1,2,4-oxadiazolyl, 1,2,5-oxadiazolyl, 1,2,3-thiadiazolyl, 1,2,4-thiadiazolyl, 1,2,5-thiadiazolyl, 1,3,4-thiadiazolyl, 1,3,5-triazinyl, 1,2,4-triazinyl, 1,2,3-triazinyl, tetrazolyl, 1,2,4,5-tetrazinyl, 1,2,3,4-tetrazinyl, 1,2,3,5-tetrazinyl, purinyl, pteridinyl, indolizinyl, benzothiadiazolyl, 9,9-dimethylacridinyl, (poly)halogenated benzene, (poly)cyanobenzene, (poly)trifluoromethylbenzene, etc., or a combination of the above two groups. 9. The organic electroluminescent device according to claim 1, characterized in that the resonant narrow spectrum fluorescent material is selected from the structure shown in any one of the following formulas (6), (7), (8) and (9): In formula (6), R is selected from one of the following substituted or unsubstituted groups: C1-C10 alkyl, C6-C30 monocyclic aromatic hydrocarbon ^or condensed aromatic hydrocarbon; ^R1 , ^R2 , R3, ^R4 , ^R5 , ^R5 , ^R7 , ^R8 , ^R9 , R ¹⁰ are independently selected from hydrogen, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, chrysene, peryl, fluoranthenyl, tetraphenyl, pentacene, benzopyrenyl, biphenyl, terphenyl, quaterphenyl, fluorenyl, spirobifluorenyl, dihydrophenanthrenyl, dihydropyrenyl, tetrahydropyrenyl, cis- or trans-indenofluorenyl, trimerized indenyl, isotrimerized indenyl, furan yl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, thienyl, benzothienyl, isobenzothienyl, dibenzothienyl, pyrrolyl, isoindolyl, carbazolyl, indenocarbazolyl, pyridyl, quinolyl, isoquinolyl, acridinyl, phenanthridinyl, benzo-5,6-quinolyl, benzo-6,7-quinolyl, benzo-7,8-quinolyl, pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, naphthoimidazolyl, phenanthroimidazolyl, pyridoimidazolyl oxazolyl, pyrazinoimidazolyl, quinoxalin imidazolyl, oxazolyl, benzoxazolyl, naphthoxazolyl, anthrazolyl, phenanthrazolyl, 1,2-thiazolyl, 1,3-thiazolyl, benzothiazolyl, pyridazinyl, benzopyridazinyl, pyrimidinyl, benzopyrimidinyl, quinoxalinyl, 1,5-diazaanthryl, 2,7-diazapyrenyl, 2,3-diazapyrenyl, 1,6-diazapyrenyl, 1,8-diazapyrenyl, 4,5-diazapyrenyl, 4,5,9,10-tetraazaperyl, pyrazinyl, phenazinyl, phenothiazinyl, naphthyridinyl, azacarbazolyl, benzocarbolinyl, phenanthroline, benzotriazolyl, 1,2,4-oxadiazolyl, 1,2,5-oxadiazolyl, 1,3,5-triazinyl, 1,2,4-triazinyl, 1,2,3-triazinyl, purinyl, pteridinyl, indolizinyl, benzothiadiazolyl, 9,9-dimethylacridinyl, or a combination of two of the above groups; In formula (6), R ⁴⁰ is selected from one of fluorophenyl, benzonitrile, and substituted or unsubstituted triazine; When the above groups have substituents, the substituents are independently selected from one of C1-C10 alkyl or cycloalkyl groups, C1-C6 alkoxy or thioalkoxy groups, C6-C30 monocyclic aromatic hydrocarbons or condensed aromatic hydrocarbon groups, and C3-C30 monocyclic heteroaromatic hydrocarbons or condensed heteroaromatic hydrocarbon groups; In formula (7), formula (8) and formula (9), ^X1 and ^X2 are independently N or B; Each of _RB , _RC , _RD and _RE is linked to the adjacent ring structure via a single bond or by fusion. Said _RA , _RB , _RC , _RD and _RE are independently selected from hydrogen, deuterium, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-methylbutyl, n-pentyl, sec-pentyl, cyclopentyl, neopentyl, n-hexyl, cyclohexyl, neohexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethylhexyl, trifluoromethyl, pentafluoroethyl, 2,2,2-trifluoroethyl, phenyl, naphthyl, anthracenyl, benzanthryl, phenanthrenyl, triphenylenyl, pyrenyl, chrysene, peryl, fluoranthenyl, naphthyl, pentacene, benzopyrenyl, biphenyl, phenylene, terphenyl, triphenylene, tetraphenylene, fluorenyl, spirobifluorenyl, dihydrophenanthrenyl, dihydropyrenyl, tetrahydropyrenyl, cis- or trans-indenofluorenyl, trimerized indenyl, isotrimerized indenyl, spirotrimerized indenyl, spiroisotrimerized indenyl, furanyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, thienyl, benzothienyl, isobenzothienyl, dibenzothienyl, pyrrolyl, isoindolyl, carbazolyl, indenocarbazolyl, pyridyl, quinolyl, isoquinolyl, acridinyl, phenanthridinyl, benzo-5,6-quinolyl, benzo-6,7-quinolyl, benzo-7,8-quinolyl, pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, naphthoimidazolyl, phenanthroimidazolyl, pyridoimidazolyl, pyrazinoimidazolyl, quinoxalinoimidazolyl, oxazolyl, benzoxazolyl, naphthoxazolyl, anthraquinone, phenanthraquinone, 1,2-thiazolyl, 1,3-thiazolyl, benzothiazolyl, pyridazinyl, benzopyridazinyl, pyrimidinyl, benzopyrimidinyl, quinoxalinyl, 1,5-diazaanthryl, 2,7-diazapyrenyl, 2,3-diazapyrenyl, 1,6-diazapyrenyl, 1,8-diazapyrenyl, 4,5-diazapyrenyl, 4,5,9,10-tetraazaperyl, pyrazinyl, phenazinyl, phenothiazinyl, naphthyridinyl, azacarbazolyl, benzocarbolinyl, phenanthrolinyl, 1,2,3-triazolyl, 1,2,4-triazolyl, benzotriazolyl, 1,2,3-oxadiazolyl, 1,2,4-oxadiazolyl, 1,2, 1,2,3-thiadiazolyl, 1,2,4-thiadiazolyl, 1,2,5-thiadiazolyl, 1,3,4-thiadiazolyl, 1,3,5-triazinyl, 1,2,4-triazinyl, 1,2,3-triazinyl, tetrazolyl, 1,2,4,5-tetrazinyl, 1,2,3,4-tetrazinyl, 1,2,3,5-tetrazinyl, purinyl, pteridinyl, indolizinyl, benzothiadiazolyl, 9,9-dimethylacridinyl, diarylamine, triarylamine, adamantane, fluorophenyl, methylphenyl, trimethylphenyl, cyanophenyl, pyrrole, piperidine, methoxy, silicon, or a combination of two of the above substituent groups; Preferably, _RA , _RB , _RC , _RD and _RE are independently selected from one of hydrogen, methyl, ethyl, n-propyl, isopropyl, cyclopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, cyclohexyl, adamantyl, fluorine, trifluoromethyl, phenyl, mesityl, naphthyl, anthracenyl, furanyl, tetrahydrofuranyl, pyrrolyl, tetrahydropyrrolyl, thienyl, carbazolyl, triazine, pyridyl, quinolyl, acridinyl, cyano, methoxy, silyl, dimethylamino, triarylamine, fluorenyl, dibenzofuranyl and dibenzothienyl, or a combination of two of the above substituents. 10. The organic electroluminescent device according to claim 1, wherein the resonant narrow spectrum fluorescent material is selected from the following specific structural compounds, which are only representative: 11. The organic electroluminescent device according to claim 1, wherein the phosphorescent sensitizer is selected from one of the following compounds: 12. The organic electroluminescent device according to claim 1, characterized in that the doping concentration of the resonant narrow spectrum fluorescent material in the light-emitting layer is 0.1wt% to 30wt%, and the doping concentration of the phosphorescent sensitizer in the light-emitting layer is 1wt% to 50wt%; Preferably, the doping concentration of the resonant narrow spectrum fluorescent material in the light-emitting layer is 0.1wt% to 10wt%, and the doping concentration of the phosphorescent sensitizer in the light-emitting layer is 1wt% to 20wt%; More preferably, the doping concentration of the resonance-type narrow-spectrum fluorescent material in the light-emitting layer is 0.1-5 wt %, and the doping concentration of the phosphorescence sensitizer in the light-emitting layer is 1-10 wt %. 13. The use of the organic electroluminescent device according to claim 1, characterized in that the application is in an organic electronic device, and the organic electronic device includes an optical sensor, a solar cell, a lighting element, an organic thin film transistor, an organic field effect transistor, an information tag, an electronic artificial skin sheet, a sheet-type scanner or an electronic paper. 14. A display device, comprising the organic electroluminescent device according to claim 1, wherein the display device is a display element, a lighting element, an information label, an electronic artificial skin sheet or an electronic paper.